JP2009135350A5 - - Google Patents

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JP2009135350A5
JP2009135350A5 JP2007311892A JP2007311892A JP2009135350A5 JP 2009135350 A5 JP2009135350 A5 JP 2009135350A5 JP 2007311892 A JP2007311892 A JP 2007311892A JP 2007311892 A JP2007311892 A JP 2007311892A JP 2009135350 A5 JP2009135350 A5 JP 2009135350A5
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layer
inorganic insulating
semiconductor element
insulating film
forming
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JP2009135350A (ja
JP5430846B2 (ja
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JP2007311892A 2007-12-03 2007-12-03 半導体装置の作製方法 Expired - Fee Related JP5430846B2 (ja)

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JP2009135350A JP2009135350A (ja) 2009-06-18
JP2009135350A5 true JP2009135350A5 (enExample) 2011-01-20
JP5430846B2 JP5430846B2 (ja) 2014-03-05

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Publication number Priority date Publication date Assignee Title
EP2439317A1 (en) 2009-06-04 2012-04-11 Mitsubishi Chemical Corporation Process and apparatus for production of crystals of compound of metal belonging to group-13 on periodic table
TWI582951B (zh) * 2009-08-07 2017-05-11 半導體能源研究所股份有限公司 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
KR102057221B1 (ko) * 2009-09-16 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101056229B1 (ko) 2009-10-12 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치
WO2011048929A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011052351A1 (en) 2009-10-29 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20220153647A (ko) 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101669476B1 (ko) * 2009-10-30 2016-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR101752348B1 (ko) * 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101796909B1 (ko) * 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
KR20250075719A (ko) * 2009-10-30 2025-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101788521B1 (ko) 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104600074A (zh) * 2009-11-06 2015-05-06 株式会社半导体能源研究所 半导体装置
WO2011058913A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011062029A1 (en) * 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
WO2011062075A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062042A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20170091760A (ko) * 2009-11-27 2017-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
CN104992962B (zh) 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011070900A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011070892A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101770976B1 (ko) 2009-12-11 2017-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
IN2012DN04871A (enExample) * 2009-12-11 2015-09-25 Semiconductor Energy Laoboratory Co Ltd
KR101813460B1 (ko) * 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101729933B1 (ko) 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
US8441009B2 (en) * 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011078373A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
WO2011077946A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102804360B (zh) * 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
EP2519969A4 (en) * 2009-12-28 2016-07-06 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8415731B2 (en) * 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
IN2012DN05920A (enExample) * 2010-01-20 2015-09-18 Semiconductor Energy Lab
CN102804603B (zh) * 2010-01-20 2015-07-15 株式会社半导体能源研究所 信号处理电路及其驱动方法
WO2011093150A1 (en) * 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096271A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101862823B1 (ko) * 2010-02-05 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101822962B1 (ko) * 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101921618B1 (ko) * 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101838130B1 (ko) * 2010-02-12 2018-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작방법
KR101820776B1 (ko) * 2010-02-19 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
KR101832119B1 (ko) * 2010-02-19 2018-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130008037A (ko) * 2010-03-05 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
KR102114012B1 (ko) * 2010-03-05 2020-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
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WO2011114868A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101891065B1 (ko) * 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
WO2011114919A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114905A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101884031B1 (ko) * 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101540039B1 (ko) * 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011132591A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI511236B (zh) * 2010-05-14 2015-12-01 Semiconductor Energy Lab 半導體裝置
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011152286A1 (en) * 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012002186A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8519387B2 (en) * 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
TWI565001B (zh) * 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI605549B (zh) * 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
DE112011102644B4 (de) * 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
JP2013009285A (ja) * 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
KR101928897B1 (ko) * 2010-08-27 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8766253B2 (en) * 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012256821A (ja) * 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
JP5710918B2 (ja) * 2010-09-13 2015-04-30 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US8871565B2 (en) * 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI539453B (zh) * 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
WO2012060253A1 (en) 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI541981B (zh) * 2010-11-12 2016-07-11 半導體能源研究所股份有限公司 半導體裝置
JP5908263B2 (ja) * 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Ｄｃ−ｄｃコンバータ
JP5864054B2 (ja) * 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012151453A (ja) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI621121B (zh) * 2011-01-05 2018-04-11 Semiconductor Energy Laboratory Co., Ltd. 儲存元件、儲存裝置、及信號處理電路
US8421071B2 (en) * 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR102026718B1 (ko) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5798933B2 (ja) * 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 信号処理回路
CN103348464B (zh) 2011-01-26 2016-01-13 株式会社半导体能源研究所 半导体装置及其制造方法
US9601178B2 (en) 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI602303B (zh) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI539597B (zh) * 2011-01-26 2016-06-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012102281A1 (en) * 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102233959B1 (ko) * 2011-01-28 2021-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치
TWI520273B (zh) * 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
US8780614B2 (en) * 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US20120211862A1 (en) * 2011-02-18 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Soi substrate and method for manufacturing soi substrate
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2012121265A1 (en) * 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
JP2012209543A (ja) * 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
TWI597842B (zh) * 2011-03-25 2017-09-01 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
JP5883699B2 (ja) * 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルｌｓｉ
JP6023453B2 (ja) * 2011-04-15 2016-11-09 株式会社半導体エネルギー研究所 記憶装置
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
WO2012157472A1 (en) * 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012157532A1 (en) 2011-05-16 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8581625B2 (en) * 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8779799B2 (en) * 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
JP6091083B2 (ja) * 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
US8610482B2 (en) * 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
US8669781B2 (en) * 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9166055B2 (en) * 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8962386B2 (en) * 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US8907392B2 (en) * 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US20130187150A1 (en) * 2012-01-20 2013-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9653614B2 (en) * 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6088253B2 (ja) * 2012-01-23 2017-03-01 株式会社半導体エネルギー研究所 半導体装置
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JP2013232567A (ja) * 2012-04-30 2013-11-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2013179922A1 (en) * 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6224931B2 (ja) * 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP5656966B2 (ja) * 2012-12-05 2015-01-21 独立行政法人科学技術振興機構 電界効果トランジスタ及びその製造方法
JP5615894B2 (ja) * 2012-12-25 2014-10-29 独立行政法人科学技術振興機構 薄膜トランジスタの製造方法、アクチュエーターの製造方法及び光学デバイスの製造方法、並びに薄膜トランジスタ及び圧電式インクジェットヘッド
US20150008428A1 (en) * 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
KR20220163502A (ko) 2013-12-26 2022-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9318618B2 (en) * 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102529174B1 (ko) * 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6305067B2 (ja) * 2014-01-09 2018-04-04 株式会社東芝 半導体装置の製造方法
SG11201606647PA (en) 2014-03-14 2016-09-29 Semiconductor Energy Lab Co Ltd Circuit system
US10050015B2 (en) 2014-03-27 2018-08-14 Intel Corporation Multi-device flexible electronics system on a chip (SOC) process integration
WO2015170220A1 (en) 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
SG10201912585TA (en) * 2014-05-30 2020-02-27 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US9455337B2 (en) * 2014-06-18 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9461179B2 (en) * 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
TWI699897B (zh) * 2014-11-21 2020-07-21 日商半導體能源研究所股份有限公司 半導體裝置
US20160155849A1 (en) 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
US10056497B2 (en) 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6583812B2 (ja) * 2015-06-24 2019-10-02 国立研究開発法人物質・材料研究機構 多層構成の薄膜トランジスタの製造方法
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
JP2017162852A (ja) * 2016-03-07 2017-09-14 株式会社ジャパンディスプレイ 半導体装置および表示装置
KR102886320B1 (ko) * 2016-08-26 2025-11-14 인텔 코포레이션 집적 회로 디바이스 구조체들 및 양면 제조 기술들
KR102605250B1 (ko) * 2016-08-30 2023-11-27 삼성디스플레이 주식회사 반도체 장치 및 그 제조 방법
JP6832656B2 (ja) * 2016-09-14 2021-02-24 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP6448743B2 (ja) * 2017-10-30 2019-01-09 株式会社半導体エネルギー研究所 半導体装置
JP7085352B2 (ja) * 2018-01-15 2022-06-16 株式会社ジャパンディスプレイ 表示装置
CN116544246A (zh) * 2023-07-07 2023-08-04 深圳市华星光电半导体显示技术有限公司 阵列基板及显示面板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2603623B2 (ja) * 1986-11-14 1997-04-23 シャープ株式会社 三次元半導体集積回路の製造方法
DE4400985C1 (de) * 1994-01-14 1995-05-11 Siemens Ag Verfahren zur Herstellung einer dreidimensionalen Schaltungsanordnung
JP3250722B2 (ja) * 1995-12-12 2002-01-28 キヤノン株式会社 Ｓｏｉ基板の製造方法および製造装置
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP4478268B2 (ja) * 1999-12-28 2010-06-09 セイコーエプソン株式会社 薄膜デバイスの製造方法
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
US6821826B1 (en) * 2003-09-30 2004-11-23 International Business Machines Corporation Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
JP2006080314A (ja) * 2004-09-09 2006-03-23 Canon Inc 結合基板の製造方法

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