JP2008529281A5 - - Google Patents

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Publication number
JP2008529281A5
JP2008529281A5 JP2007552312A JP2007552312A JP2008529281A5 JP 2008529281 A5 JP2008529281 A5 JP 2008529281A5 JP 2007552312 A JP2007552312 A JP 2007552312A JP 2007552312 A JP2007552312 A JP 2007552312A JP 2008529281 A5 JP2008529281 A5 JP 2008529281A5
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JP
Japan
Prior art keywords
device module
layer
transparent conductive
lower electrode
conductive layer
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JP2007552312A
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English (en)
Japanese (ja)
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JP2008529281A (ja
JP4794577B2 (ja
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Priority claimed from US11/039,053 external-priority patent/US7276724B2/en
Priority claimed from US11/207,157 external-priority patent/US7838868B2/en
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Publication of JP2008529281A publication Critical patent/JP2008529281A/ja
Publication of JP2008529281A5 publication Critical patent/JP2008529281A5/ja
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Publication of JP4794577B2 publication Critical patent/JP4794577B2/ja
Expired - Fee Related legal-status Critical Current
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JP2007552312A 2005-01-20 2006-01-20 化合物伝達性基板を備えた光電子構造 Expired - Fee Related JP4794577B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/039,053 US7276724B2 (en) 2005-01-20 2005-01-20 Series interconnected optoelectronic device module assembly
US11/039,053 2005-01-20
US11/207,157 US7838868B2 (en) 2005-01-20 2005-08-16 Optoelectronic architecture having compound conducting substrate
US11/207,157 2005-08-16
PCT/US2006/002182 WO2006078985A2 (en) 2005-01-20 2006-01-20 Optoelectronic architecture having compound conducting substrate

Publications (3)

Publication Number Publication Date
JP2008529281A JP2008529281A (ja) 2008-07-31
JP2008529281A5 true JP2008529281A5 (enExample) 2009-03-05
JP4794577B2 JP4794577B2 (ja) 2011-10-19

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JP2007552312A Expired - Fee Related JP4794577B2 (ja) 2005-01-20 2006-01-20 化合物伝達性基板を備えた光電子構造

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US (6) US7838868B2 (enExample)
EP (1) EP1849191A2 (enExample)
JP (1) JP4794577B2 (enExample)
WO (1) WO2006078985A2 (enExample)

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