JP2008028244A - 貼合せsoiウェーハの製造方法およびその方法により製造された貼合せsoiウェーハ - Google Patents
貼合せsoiウェーハの製造方法およびその方法により製造された貼合せsoiウェーハ Download PDFInfo
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- JP2008028244A JP2008028244A JP2006200958A JP2006200958A JP2008028244A JP 2008028244 A JP2008028244 A JP 2008028244A JP 2006200958 A JP2006200958 A JP 2006200958A JP 2006200958 A JP2006200958 A JP 2006200958A JP 2008028244 A JP2008028244 A JP 2008028244A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 238000010030 laminating Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 67
- 239000000126 substance Substances 0.000 claims abstract description 65
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 49
- 230000007547 defect Effects 0.000 claims abstract description 41
- 239000013078 crystal Substances 0.000 claims abstract description 39
- 238000004140 cleaning Methods 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 4
- 238000005728 strengthening Methods 0.000 claims description 13
- 238000005247 gettering Methods 0.000 abstract description 19
- 239000012535 impurity Substances 0.000 abstract description 12
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 10
- 238000003475 lamination Methods 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 description 181
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 32
- 239000012212 insulator Substances 0.000 description 8
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000005416 organic matter Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000002411 adverse Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- -1 carbon ions Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
【解決手段】貼り合わせ前のウェーハ表面に有機物が存在する状態で貼り合わせ、貼合せ界面に前記有機物を閉じこめた状態で接合強化熱処理を行うことにより、貼合せ界面に炭素に起因する微小な結晶欠陥を形成させる。そのための具体的な方法として、ウェーハ表面を、有機物を含む雰囲気中で洗浄する方法、有機物を含む雰囲気中で乾燥する方法、有機物を含む洗浄液によりウェーハ表面を処理する方法、さらに、この有機物を含む処理液をウェーハ表面に塗布または滴下する方法等が適用可能である。この方法により製造される本発明の貼合せSOIウェーハは、デバイス特性を劣化させる重金属不純物を効果的に除去することができる。
【選択図】図1
Description
前記の図1に示したフローチャートの工程に従って、以下のように貼合せSOIウェーハを作製した。
前記の図2に示したフローチャートの工程に従って、貼合せSOIウェーハを作製した。
前記の図3に示したフローチャートの工程に従って、貼合せSOIウェーハを作製した。
11:支持ウェーハ
12:活性層ウェーハ、SOI層
13:酸化膜
14:自然酸化膜
15:結晶欠陥
Claims (8)
- SOI層となる活性層ウェーハと支持ウェーハとを酸化膜を介して貼り合わせた後、前記活性層ウェーハを薄膜化することにより、埋め込み酸化膜上にSOI層が形成された貼合せSOIウェーハを製造する方法において、
貼り合わせ前のウェーハ表面に有機物が存在する状態で貼り合わせ、貼合せ界面に前記有機物を閉じこめた状態で接合強化熱処理を行うことにより、貼合せ界面に結晶欠陥を形成させることを特徴とする貼合せSOIウェーハの製造方法。 - 前記貼り合わせ前のウェーハ表面に有機物が存在する状態が、有機物を含む雰囲気中でウェーハ表面を洗浄することにより得られることを特徴とする請求項1に記載の貼合せSOIウェーハの製造方法。
- 前記貼り合わせ前のウェーハ表面に有機物が存在する状態が、洗浄後のウェーハを有機物を含む雰囲気中で乾燥することにより得られることを特徴とする請求項1に記載の貼合せSOIウェーハの製造方法。
- 前記貼り合わせ前のウェーハ表面に有機物が存在する状態が、有機物を含む洗浄液によりウェーハ表面を処理することにより得られることを特徴とする請求項1に記載の貼合せSOIウェーハの製造方法。
- 前記貼り合わせ前のウェーハ表面に有機物が存在する状態が、有機物を含む処理液をウェーハ表面に塗布または滴下することにより得られることを特徴とする請求項1に記載の貼合せSOIウェーハの製造方法。
- 請求項1〜5のいずれかに記載の方法で製造された貼合せSOIウェーハであって、貼合せ界面に炭素に起因する微小な結晶欠陥を有することを特徴とする貼合せSOIウェーハ。
- 前記結晶欠陥の大きさが5〜50nmであることを特徴とする請求項6に記載の貼合せSOIウェーハ。
- 前記貼合せ界面において5×1018atoms/cm3以上の炭素濃度ピークが検出されることを特徴とする請求項6または請求項7に記載の貼合せSOIウェーハ。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006200958A JP5315596B2 (ja) | 2006-07-24 | 2006-07-24 | 貼合せsoiウェーハの製造方法 |
TW096125426A TW200822179A (en) | 2006-07-24 | 2007-07-12 | Method for manufacturing bonded SOI wafer and bonded SOI wafer manufactured thereby |
CN2007101369244A CN101114574B (zh) | 2006-07-24 | 2007-07-23 | 粘贴soi晶片的制造方法及通过该方法制造的粘贴soi晶片 |
EP07014401.9A EP1883104B1 (en) | 2006-07-24 | 2007-07-23 | Method for manufacturing a bonded SOI wafer |
US11/878,255 US7528049B2 (en) | 2006-07-24 | 2007-07-23 | Method for manufacturing bonded SOI wafer and bonded SOI wafer manufactured thereby |
SG200705417-4A SG139690A1 (en) | 2006-07-24 | 2007-07-24 | Method for manufacturing bonded soi wafer and bonded soi wafer manufactured thereby |
Applications Claiming Priority (1)
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JP2006200958A JP5315596B2 (ja) | 2006-07-24 | 2006-07-24 | 貼合せsoiウェーハの製造方法 |
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JP2013084329A Division JP5630527B2 (ja) | 2013-04-12 | 2013-04-12 | 貼合せsoiウェーハの製造方法 |
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JP2008028244A true JP2008028244A (ja) | 2008-02-07 |
JP5315596B2 JP5315596B2 (ja) | 2013-10-16 |
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US (1) | US7528049B2 (ja) |
EP (1) | EP1883104B1 (ja) |
JP (1) | JP5315596B2 (ja) |
CN (1) | CN101114574B (ja) |
SG (1) | SG139690A1 (ja) |
TW (1) | TW200822179A (ja) |
Cited By (8)
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JP2009283533A (ja) * | 2008-05-20 | 2009-12-03 | Sumco Corp | 裏面照射型固体撮像素子用ウェーハ、その製造方法及び裏面照射型固体撮像素子 |
JP2010062414A (ja) * | 2008-09-05 | 2010-03-18 | Sumco Corp | 裏面照射型固体撮像素子用ウェーハの製造方法 |
JP2012114282A (ja) * | 2010-11-25 | 2012-06-14 | Sumco Corp | Soiウェーハの製造方法並びにウェーハ貼り合わせシステム |
JP2013229356A (ja) * | 2012-04-24 | 2013-11-07 | Mitsubishi Electric Corp | Soiウェハおよびその製造方法、並びにmemsデバイス |
JP2013247195A (ja) * | 2012-05-24 | 2013-12-09 | Sumco Corp | Soiウェーハの製造方法 |
JP2015035467A (ja) * | 2013-08-08 | 2015-02-19 | 株式会社Sumco | 貼り合わせウェーハの製造方法および貼り合わせウェーハ |
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KR20210038835A (ko) * | 2019-09-30 | 2021-04-08 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Soi(semiconductor-on-insulator) 기판 및 형성 방법 |
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JP5315596B2 (ja) * | 2006-07-24 | 2013-10-16 | 株式会社Sumco | 貼合せsoiウェーハの製造方法 |
FR2919427B1 (fr) * | 2007-07-26 | 2010-12-03 | Soitec Silicon On Insulator | Structure a reservoir de charges. |
US20090242939A1 (en) * | 2008-03-25 | 2009-10-01 | Sumco Corporation | Wafer for backside illumination type solid imaging device, production method thereof and backside illumination solid imaging device |
JP5752264B2 (ja) | 2010-12-27 | 2015-07-22 | シャンハイ シングイ テクノロジー カンパニー リミテッドShanghai Simgui Technology Co., Ltd | 不純物のゲッタリングプロセスで絶縁層付きの半導体基板を製造する方法 |
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TW200822179A (en) | 2008-05-16 |
CN101114574B (zh) | 2011-07-27 |
SG139690A1 (en) | 2008-02-29 |
US20080020541A1 (en) | 2008-01-24 |
TWI364059B (ja) | 2012-05-11 |
EP1883104B1 (en) | 2015-09-30 |
EP1883104A1 (en) | 2008-01-30 |
CN101114574A (zh) | 2008-01-30 |
JP5315596B2 (ja) | 2013-10-16 |
US7528049B2 (en) | 2009-05-05 |
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