FR2919427B1 - Structure a reservoir de charges. - Google Patents
Structure a reservoir de charges.Info
- Publication number
- FR2919427B1 FR2919427B1 FR0756738A FR0756738A FR2919427B1 FR 2919427 B1 FR2919427 B1 FR 2919427B1 FR 0756738 A FR0756738 A FR 0756738A FR 0756738 A FR0756738 A FR 0756738A FR 2919427 B1 FR2919427 B1 FR 2919427B1
- Authority
- FR
- France
- Prior art keywords
- reservoir
- loads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31616—Deposition of Al2O3
- H01L21/3162—Deposition of Al2O3 on a silicon body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31637—Deposition of Tantalum oxides, e.g. Ta2O5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31641—Deposition of Zirconium oxides, e.g. ZrO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0756738A FR2919427B1 (fr) | 2007-07-26 | 2007-07-26 | Structure a reservoir de charges. |
JP2010517382A JP5665182B2 (ja) | 2007-07-26 | 2008-07-21 | 電荷蓄積構造 |
EP08775250A EP2174347A1 (fr) | 2007-07-26 | 2008-07-21 | Structure de réservoir de charges |
PCT/EP2008/059524 WO2009013268A1 (fr) | 2007-07-26 | 2008-07-21 | Structure de réservoir de charges |
US12/667,990 US8802539B2 (en) | 2007-07-26 | 2008-07-21 | Charge reservoir structure |
CN2008800185212A CN101681872B (zh) | 2007-07-26 | 2008-07-21 | 电荷库结构 |
KR1020097025567A KR20100033372A (ko) | 2007-07-26 | 2008-07-21 | 전하 저장 구조물 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0756738A FR2919427B1 (fr) | 2007-07-26 | 2007-07-26 | Structure a reservoir de charges. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2919427A1 FR2919427A1 (fr) | 2009-01-30 |
FR2919427B1 true FR2919427B1 (fr) | 2010-12-03 |
Family
ID=39020776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0756738A Active FR2919427B1 (fr) | 2007-07-26 | 2007-07-26 | Structure a reservoir de charges. |
Country Status (7)
Country | Link |
---|---|
US (1) | US8802539B2 (fr) |
EP (1) | EP2174347A1 (fr) |
JP (1) | JP5665182B2 (fr) |
KR (1) | KR20100033372A (fr) |
CN (1) | CN101681872B (fr) |
FR (1) | FR2919427B1 (fr) |
WO (1) | WO2009013268A1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102543828B (zh) * | 2011-11-02 | 2014-12-10 | 上海华力微电子有限公司 | 一种soi硅片的制备方法 |
EP2894671B1 (fr) * | 2012-09-07 | 2022-06-08 | Kyocera Corporation | Substrat composite, et procédé de fabrication de celui-ci |
CN105226067B (zh) * | 2015-08-25 | 2018-07-24 | 上海新傲科技股份有限公司 | 带有电荷陷阱和绝缘埋层的衬底及其制备方法 |
FR3045933B1 (fr) * | 2015-12-22 | 2018-02-09 | Soitec | Substrat pour un dispositif a ondes acoustiques de surface ou a ondes acoustiques de volume compense en temperature |
CN107146758B (zh) * | 2016-12-27 | 2019-12-13 | 上海新傲科技股份有限公司 | 带有载流子俘获中心的衬底的制备方法 |
CN106783725B (zh) | 2016-12-27 | 2019-09-17 | 上海新傲科技股份有限公司 | 带有绝缘埋层的衬底的制备方法 |
FR3077923B1 (fr) * | 2018-02-12 | 2021-07-16 | Soitec Silicon On Insulator | Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche |
CN115777139A (zh) * | 2020-07-28 | 2023-03-10 | 索泰克公司 | 将薄层转移到设有电荷俘获层的载体衬底的方法 |
CN112750686B (zh) * | 2020-12-30 | 2021-12-07 | 济南晶正电子科技有限公司 | 一种多层衬底、电子元器件及多层衬底制备方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246533A (ja) * | 1996-03-05 | 1997-09-19 | Hitachi Ltd | 半導体装置およびその製造方法 |
FR2748850B1 (fr) * | 1996-05-15 | 1998-07-24 | Commissariat Energie Atomique | Procede de realisation d'un film mince de materiau solide et applications de ce procede |
US5852306A (en) * | 1997-01-29 | 1998-12-22 | Micron Technology, Inc. | Flash memory with nanocrystalline silicon film floating gate |
US6368938B1 (en) * | 1999-10-05 | 2002-04-09 | Silicon Wafer Technologies, Inc. | Process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate |
US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
EP1134799A1 (fr) * | 2000-03-15 | 2001-09-19 | STMicroelectronics S.r.l. | Procedé thermique réduit pour former une couche de silicium nanocristallin dans une fine couche d'oxyde |
WO2001082346A1 (fr) * | 2000-04-24 | 2001-11-01 | Beijing Normal University | Procede de fabrication d'un materiau en silicium sur isolant (soi) |
US6841917B2 (en) * | 2001-06-11 | 2005-01-11 | Rochester Institute Of Technology | Electrostatic levitation and attraction systems and methods |
DE10216838A1 (de) * | 2002-04-16 | 2003-11-06 | Infineon Technologies Ag | Feldeffekttransistor, Feldeffekttransistor-Anordnung, Verfahren zum Justieren einer elektrischen Transsistoreigenschaft eines Feldeffektransistors und Verfahren zum Herstellen eines Feldeffekttransistors |
KR100476901B1 (ko) * | 2002-05-22 | 2005-03-17 | 삼성전자주식회사 | 소이 반도체기판의 형성방법 |
US7057234B2 (en) * | 2002-12-06 | 2006-06-06 | Cornell Research Foundation, Inc. | Scalable nano-transistor and memory using back-side trapping |
US6958265B2 (en) * | 2003-09-16 | 2005-10-25 | Freescale Semiconductor, Inc. | Semiconductor device with nanoclusters |
KR20060118437A (ko) * | 2003-09-26 | 2006-11-23 | 위니베르시트카솔리끄드루뱅 | 저항손을 감소시키는 다층 반도체 구조의 제조 방법 |
FR2860341B1 (fr) * | 2003-09-26 | 2005-12-30 | Soitec Silicon On Insulator | Procede de fabrication de structure multicouche a pertes diminuees |
FR2890489B1 (fr) * | 2005-09-08 | 2008-03-07 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant |
JP4661707B2 (ja) * | 2005-10-03 | 2011-03-30 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法 |
JP2007173354A (ja) * | 2005-12-20 | 2007-07-05 | Shin Etsu Chem Co Ltd | Soi基板およびsoi基板の製造方法 |
JP2007184466A (ja) * | 2006-01-10 | 2007-07-19 | Renesas Technology Corp | 半導体装置およびその製造方法 |
FR2896619B1 (fr) * | 2006-01-23 | 2008-05-23 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat composite a proprietes electriques ameliorees |
FR2896618B1 (fr) * | 2006-01-23 | 2008-05-23 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat composite |
JP5315596B2 (ja) * | 2006-07-24 | 2013-10-16 | 株式会社Sumco | 貼合せsoiウェーハの製造方法 |
US7981754B2 (en) * | 2006-09-07 | 2011-07-19 | Renesas Electronics Corporation | Manufacturing method of bonded SOI substrate and manufacturing method of semiconductor device |
JP4364227B2 (ja) * | 2006-09-29 | 2009-11-11 | 株式会社東芝 | 半導体記憶装置 |
FR2911430B1 (fr) * | 2007-01-15 | 2009-04-17 | Soitec Silicon On Insulator | "procede de fabrication d'un substrat hybride" |
US7955950B2 (en) * | 2007-10-18 | 2011-06-07 | International Business Machines Corporation | Semiconductor-on-insulator substrate with a diffusion barrier |
-
2007
- 2007-07-26 FR FR0756738A patent/FR2919427B1/fr active Active
-
2008
- 2008-07-21 US US12/667,990 patent/US8802539B2/en active Active
- 2008-07-21 EP EP08775250A patent/EP2174347A1/fr not_active Withdrawn
- 2008-07-21 JP JP2010517382A patent/JP5665182B2/ja active Active
- 2008-07-21 KR KR1020097025567A patent/KR20100033372A/ko not_active Application Discontinuation
- 2008-07-21 WO PCT/EP2008/059524 patent/WO2009013268A1/fr active Application Filing
- 2008-07-21 CN CN2008800185212A patent/CN101681872B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
WO2009013268A1 (fr) | 2009-01-29 |
US8802539B2 (en) | 2014-08-12 |
CN101681872B (zh) | 2012-04-04 |
EP2174347A1 (fr) | 2010-04-14 |
JP5665182B2 (ja) | 2015-02-04 |
US20100187649A1 (en) | 2010-07-29 |
CN101681872A (zh) | 2010-03-24 |
KR20100033372A (ko) | 2010-03-29 |
JP2010534926A (ja) | 2010-11-11 |
FR2919427A1 (fr) | 2009-01-30 |
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