FR3077923B1 - Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche - Google Patents

Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche Download PDF

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Publication number
FR3077923B1
FR3077923B1 FR1851165A FR1851165A FR3077923B1 FR 3077923 B1 FR3077923 B1 FR 3077923B1 FR 1851165 A FR1851165 A FR 1851165A FR 1851165 A FR1851165 A FR 1851165A FR 3077923 B1 FR3077923 B1 FR 3077923B1
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FR
France
Prior art keywords
substrate
donor substrate
recipient
layer
manufacturing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1851165A
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English (en)
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FR3077923A1 (fr
Inventor
Daniel Delprat
Damien Parissi
Marcel Broekaart
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Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1851165A priority Critical patent/FR3077923B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to TW108104621A priority patent/TWI771565B/zh
Priority to JP2020536572A priority patent/JP7314445B2/ja
Priority to SG11202004605VA priority patent/SG11202004605VA/en
Priority to CN201980005951.9A priority patent/CN111386600A/zh
Priority to US16/969,350 priority patent/US11373898B2/en
Priority to PCT/EP2019/053427 priority patent/WO2019155081A1/fr
Priority to DE112019000754.8T priority patent/DE112019000754T5/de
Priority to KR1020207017115A priority patent/KR20200117986A/ko
Publication of FR3077923A1 publication Critical patent/FR3077923A1/fr
Application granted granted Critical
Publication of FR3077923B1 publication Critical patent/FR3077923B1/fr
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
    • B81C2201/115—Roughening a surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

Abstract

L'invention concerne un procédé de fabrication d'une structure de type semi-conducteur sur isolant par transfert d'une couche d'un substrat donneur sur un substrat receveur, comprenant les étapes suivantes : a) la fourniture du substrat donneur et du substrat receveur, b) la formation dans le substrat donneur d'une zone de fragilisation délimitant la couche à transférer, c) le collage du substrat donneur sur le substrat receveur, la surface du substrat donneur opposée à la zone de fragilisation par rapport à la couche à transférer étant à l'interface de collage, d) le détachement du substrat donneur le long de la zone de fragilisation permettant le transfert de la couche à transférer sur le substrat receveur, le procédé de transfert étant caractérisé en ce qu'il comprend, avant l'étape de collage, une étape de modification contrôlée de la courbure du substrat donneur et/ou du substrat receveur de sorte à écarter les substrats l'un de l'autre au moins dans une région de leur périphérie.
FR1851165A 2018-02-12 2018-02-12 Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche Active FR3077923B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1851165A FR3077923B1 (fr) 2018-02-12 2018-02-12 Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche
JP2020536572A JP7314445B2 (ja) 2018-02-12 2019-02-12 層移転により半導体オンインシュレータ型構造を製造するための方法
SG11202004605VA SG11202004605VA (en) 2018-02-12 2019-02-12 Method for manufacturing a semiconductor on insulator type structure by layer transfer
CN201980005951.9A CN111386600A (zh) 2018-02-12 2019-02-12 通过层转移来制造绝缘体上半导体型结构的方法
TW108104621A TWI771565B (zh) 2018-02-12 2019-02-12 用於藉由層轉移製造在絕緣體上半導體型結構之方法
US16/969,350 US11373898B2 (en) 2018-02-12 2019-02-12 Method for manufacturing a semiconductor on insulator type structure by layer transfer
PCT/EP2019/053427 WO2019155081A1 (fr) 2018-02-12 2019-02-12 Procédé de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche
DE112019000754.8T DE112019000754T5 (de) 2018-02-12 2019-02-12 Verfahren zum herstellen einer struktur des halbleiter-auf-isolatortyps durch eine schichtübertragung
KR1020207017115A KR20200117986A (ko) 2018-02-12 2019-02-12 층 전달에 의한 반도체-온-절연체 형 구조의 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1851165 2018-02-12
FR1851165A FR3077923B1 (fr) 2018-02-12 2018-02-12 Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche

Publications (2)

Publication Number Publication Date
FR3077923A1 FR3077923A1 (fr) 2019-08-16
FR3077923B1 true FR3077923B1 (fr) 2021-07-16

Family

ID=62092095

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1851165A Active FR3077923B1 (fr) 2018-02-12 2018-02-12 Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche

Country Status (9)

Country Link
US (1) US11373898B2 (fr)
JP (1) JP7314445B2 (fr)
KR (1) KR20200117986A (fr)
CN (1) CN111386600A (fr)
DE (1) DE112019000754T5 (fr)
FR (1) FR3077923B1 (fr)
SG (1) SG11202004605VA (fr)
TW (1) TWI771565B (fr)
WO (1) WO2019155081A1 (fr)

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0355822A (ja) * 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
JP3239884B2 (ja) * 1989-12-12 2001-12-17 ソニー株式会社 半導体基板の製造方法
CN1132223C (zh) * 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US20090325362A1 (en) * 2003-01-07 2009-12-31 Nabil Chhaimi Method of recycling an epitaxied donor wafer
FR2855908B1 (fr) * 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention d'une structure comprenant au moins un substrat et une couche ultramince
US9011598B2 (en) * 2004-06-03 2015-04-21 Soitec Method for making a composite substrate and composite substrate according to the method
US7094666B2 (en) * 2004-07-29 2006-08-22 Silicon Genesis Corporation Method and system for fabricating strained layers for the manufacture of integrated circuits
EP1894234B1 (fr) * 2005-02-28 2021-11-03 Silicon Genesis Corporation Procédé de rigidification du substrat et système pour un transfert de couche.
US7262112B2 (en) * 2005-06-27 2007-08-28 The Regents Of The University Of California Method for producing dislocation-free strained crystalline films
US7745313B2 (en) * 2008-05-28 2010-06-29 Solexel, Inc. Substrate release methods and apparatuses
FR2919427B1 (fr) * 2007-07-26 2010-12-03 Soitec Silicon On Insulator Structure a reservoir de charges.
US8101501B2 (en) * 2007-10-10 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
FR2926674B1 (fr) * 2008-01-21 2010-03-26 Soitec Silicon On Insulator Procede de fabrication d'une structure composite avec couche d'oxyde de collage stable
EP2161741B1 (fr) * 2008-09-03 2014-06-11 Soitec Procédé de fabrication d'un semi-conducteur sur un substrat isolant doté d'une densité réduite de défauts SECCO
FR2941302B1 (fr) * 2009-01-19 2011-04-15 Soitec Silicon On Insulator Procede de test sur le substrat support d'un substrat de type "semi-conducteur sur isolant".
EP2213415A1 (fr) * 2009-01-29 2010-08-04 S.O.I. TEC Silicon Dispositif pour le polissage du bord d'un substrat semi-conducteur
JP5851113B2 (ja) * 2010-04-26 2016-02-03 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
FR2965398B1 (fr) * 2010-09-23 2012-10-12 Soitec Silicon On Insulator Procédé de collage par adhésion moléculaire avec réduction de desalignement de type overlay
FR2977073B1 (fr) * 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de transfert d'une couche de semi-conducteur, et substrat comprenant une structure de confinement
FR2995444B1 (fr) * 2012-09-10 2016-11-25 Soitec Silicon On Insulator Procede de detachement d'une couche
WO2016081313A1 (fr) * 2014-11-18 2016-05-26 Sunedison Semiconductor Limited Procédé de fabrication de plaquettes de semi-conducteur sur isolant à haute résistivité comprenant couches de piégeage de charges
FR3045933B1 (fr) * 2015-12-22 2018-02-09 Soitec Substrat pour un dispositif a ondes acoustiques de surface ou a ondes acoustiques de volume compense en temperature
FR3057396B1 (fr) * 2016-10-10 2018-12-14 Soitec Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat
FR3073083B1 (fr) * 2017-10-31 2019-10-11 Soitec Procede de fabrication d'un film sur un feuillet flexible

Also Published As

Publication number Publication date
WO2019155081A1 (fr) 2019-08-15
JP2021513211A (ja) 2021-05-20
TWI771565B (zh) 2022-07-21
US11373898B2 (en) 2022-06-28
CN111386600A (zh) 2020-07-07
US20210050250A1 (en) 2021-02-18
DE112019000754T5 (de) 2020-10-22
TW201939667A (zh) 2019-10-01
KR20200117986A (ko) 2020-10-14
FR3077923A1 (fr) 2019-08-16
SG11202004605VA (en) 2020-06-29
JP7314445B2 (ja) 2023-07-26

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