FR2941302B1 - Procede de test sur le substrat support d'un substrat de type "semi-conducteur sur isolant". - Google Patents

Procede de test sur le substrat support d'un substrat de type "semi-conducteur sur isolant".

Info

Publication number
FR2941302B1
FR2941302B1 FR0950296A FR0950296A FR2941302B1 FR 2941302 B1 FR2941302 B1 FR 2941302B1 FR 0950296 A FR0950296 A FR 0950296A FR 0950296 A FR0950296 A FR 0950296A FR 2941302 B1 FR2941302 B1 FR 2941302B1
Authority
FR
France
Prior art keywords
substrate
insulation
testing
semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0950296A
Other languages
English (en)
Other versions
FR2941302A1 (fr
Inventor
Blanchard Chrystelle Lagahe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0950296A priority Critical patent/FR2941302B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to TW099100902A priority patent/TW201041060A/zh
Priority to SG2011041779A priority patent/SG172762A1/en
Priority to US13/133,118 priority patent/US20110233719A1/en
Priority to EP10700411A priority patent/EP2382655A1/fr
Priority to JP2011545731A priority patent/JP2012515447A/ja
Priority to PCT/EP2010/050408 priority patent/WO2010081852A1/fr
Priority to CN2010800042254A priority patent/CN102272912A/zh
Priority to KR1020117016726A priority patent/KR20110099320A/ko
Publication of FR2941302A1 publication Critical patent/FR2941302A1/fr
Application granted granted Critical
Publication of FR2941302B1 publication Critical patent/FR2941302B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
FR0950296A 2009-01-19 2009-01-19 Procede de test sur le substrat support d'un substrat de type "semi-conducteur sur isolant". Expired - Fee Related FR2941302B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0950296A FR2941302B1 (fr) 2009-01-19 2009-01-19 Procede de test sur le substrat support d'un substrat de type "semi-conducteur sur isolant".
SG2011041779A SG172762A1 (en) 2009-01-19 2010-01-14 A test method on the support substrate of a substrate of the "semiconductor on insulator" type
US13/133,118 US20110233719A1 (en) 2009-01-19 2010-01-14 Test method on the support substrate of a substrate of the "semiconductor on insulator" type
EP10700411A EP2382655A1 (fr) 2009-01-19 2010-01-14 Procédé de test sur le substrat de support d'un substrat du type « semi-conducteur sur isolant »
TW099100902A TW201041060A (en) 2009-01-19 2010-01-14 A test method on the support substrate of a substrate of the "semiconductor on insulator" type
JP2011545731A JP2012515447A (ja) 2009-01-19 2010-01-14 半導体・オン・インシュレータ型基板の支持基板に対する検査方法
PCT/EP2010/050408 WO2010081852A1 (fr) 2009-01-19 2010-01-14 Procédé de test sur le substrat de support d'un substrat du type « semi-conducteur sur isolant »
CN2010800042254A CN102272912A (zh) 2009-01-19 2010-01-14 “绝缘体上半导体”型衬底的支撑衬底的测试方法
KR1020117016726A KR20110099320A (ko) 2009-01-19 2010-01-14 “반도체 온 절연물”형 기판의 지지 기판에 대한 테스트 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0950296A FR2941302B1 (fr) 2009-01-19 2009-01-19 Procede de test sur le substrat support d'un substrat de type "semi-conducteur sur isolant".

Publications (2)

Publication Number Publication Date
FR2941302A1 FR2941302A1 (fr) 2010-07-23
FR2941302B1 true FR2941302B1 (fr) 2011-04-15

Family

ID=41057317

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0950296A Expired - Fee Related FR2941302B1 (fr) 2009-01-19 2009-01-19 Procede de test sur le substrat support d'un substrat de type "semi-conducteur sur isolant".

Country Status (9)

Country Link
US (1) US20110233719A1 (fr)
EP (1) EP2382655A1 (fr)
JP (1) JP2012515447A (fr)
KR (1) KR20110099320A (fr)
CN (1) CN102272912A (fr)
FR (1) FR2941302B1 (fr)
SG (1) SG172762A1 (fr)
TW (1) TW201041060A (fr)
WO (1) WO2010081852A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2957716B1 (fr) * 2010-03-18 2012-10-05 Soitec Silicon On Insulator Procede de finition d'un substrat de type semi-conducteur sur isolant
US9059240B2 (en) 2012-06-05 2015-06-16 International Business Machines Corporation Fixture for shaping a laminate substrate
US9048245B2 (en) 2012-06-05 2015-06-02 International Business Machines Corporation Method for shaping a laminate substrate
JP2014093420A (ja) * 2012-11-02 2014-05-19 Toyota Motor Corp ウェハを支持ディスクに接着する治具、および、それを用いた半導体装置の製造方法
FR3077923B1 (fr) * 2018-02-12 2021-07-16 Soitec Silicon On Insulator Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5519336A (en) * 1992-03-03 1996-05-21 Honeywell Inc. Method for electrically characterizing the insulator in SOI devices
JPH08501900A (ja) 1992-06-17 1996-02-27 ハリス・コーポレーション 結合ウェーハの製法
JPH10242439A (ja) * 1997-02-27 1998-09-11 Mitsubishi Materials Shilicon Corp 張り合わせシリコンウェーハおよびその製造方法
JP2001060676A (ja) * 1999-08-20 2001-03-06 Mitsubishi Materials Silicon Corp 界面準位密度の算出方法
EP1189266B1 (fr) * 2000-03-29 2017-04-05 Shin-Etsu Handotai Co., Ltd. Procede d'obtention de tranches de silicium ou de soi et tranches ainsi obtenues
JP3991300B2 (ja) * 2000-04-28 2007-10-17 株式会社Ｓｕｍｃｏ 張り合わせ誘電体分離ウェーハの製造方法
US7103484B1 (en) * 2003-10-31 2006-09-05 Kla-Tencor Technologies Corp. Non-contact methods for measuring electrical thickness and determining nitrogen content of insulating films
JP4419710B2 (ja) * 2004-06-25 2010-02-24 信越半導体株式会社 Ｓｏｉウエーハの評価方法
JP2006093597A (ja) * 2004-09-27 2006-04-06 Shin Etsu Handotai Co Ltd 半導体ウェーハの評価方法
JP2006229145A (ja) * 2005-02-21 2006-08-31 Oki Electric Ind Co Ltd 不純物の注入深さの監視方法
JP5003322B2 (ja) * 2007-07-09 2012-08-15 信越半導体株式会社 Ｓｏｉウェーハの評価方法
JP2009231376A (ja) * 2008-03-19 2009-10-08 Shin Etsu Handotai Co Ltd Ｓｏｉウェーハ及び半導体デバイスならびにｓｏｉウェーハの製造方法

Also Published As

Publication number Publication date
TW201041060A (en) 2010-11-16
CN102272912A (zh) 2011-12-07
EP2382655A1 (fr) 2011-11-02
US20110233719A1 (en) 2011-09-29
WO2010081852A1 (fr) 2010-07-22
JP2012515447A (ja) 2012-07-05
FR2941302A1 (fr) 2010-07-23
KR20110099320A (ko) 2011-09-07
SG172762A1 (en) 2011-08-29

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Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120926

ST Notification of lapse

Effective date: 20140930