FR2950062B1 - Solution et procede d'activation de la surface d'un substrat semi-conducteur - Google Patents
Solution et procede d'activation de la surface d'un substrat semi-conducteurInfo
- Publication number
- FR2950062B1 FR2950062B1 FR0956262A FR0956262A FR2950062B1 FR 2950062 B1 FR2950062 B1 FR 2950062B1 FR 0956262 A FR0956262 A FR 0956262A FR 0956262 A FR0956262 A FR 0956262A FR 2950062 B1 FR2950062 B1 FR 2950062B1
- Authority
- FR
- France
- Prior art keywords
- activating
- solution
- semiconductor substrate
- semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003213 activating effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
- C23C18/1692—Heat-treatment
- C23C18/1696—Control of atmosphere
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2053—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
- C23C18/2066—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0956262A FR2950062B1 (fr) | 2009-09-11 | 2009-09-11 | Solution et procede d'activation de la surface d'un substrat semi-conducteur |
FR0959676A FR2950063B1 (fr) | 2009-09-11 | 2009-12-30 | Solution et procede d'activation de la surface d'un substrat semi-conducteur |
PCT/EP2010/063210 WO2011029860A1 (fr) | 2009-09-11 | 2010-09-09 | Solution et procédé permettant d'activer la surface d'un substrat semi-conducteur |
SG2012009957A SG178390A1 (en) | 2009-09-11 | 2010-09-09 | Solution and process for activating the surface of a semiconductive substrate |
US13/390,208 US9181623B2 (en) | 2009-09-11 | 2010-09-09 | Solution and process for activating the surface of a semiconductor substrate |
KR1020127004085A KR101689048B1 (ko) | 2009-09-11 | 2010-09-09 | 반도체 기판의 표면을 활성화하는 용액 및 공정 |
EP10749882.6A EP2475805B1 (fr) | 2009-09-11 | 2010-09-09 | Solution et procédé permettant d'activer la surface d'un substrat semi-conducteur |
JP2012528355A JP5764560B2 (ja) | 2009-09-11 | 2010-09-09 | 半導体基板表面を活性化するための溶液及びプロセス |
CN201080040226.4A CN102482778B (zh) | 2009-09-11 | 2010-09-09 | 对半导体衬底的表面进行活化的溶液和方法 |
CA2771024A CA2771024C (fr) | 2009-09-11 | 2010-09-09 | Solution et procede permettant d'activer la surface d'un substrat semi-conducteur |
TW099130727A TWI546410B (zh) | 2009-09-11 | 2010-09-10 | 活化半導體基板表面之溶液及方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0956262A FR2950062B1 (fr) | 2009-09-11 | 2009-09-11 | Solution et procede d'activation de la surface d'un substrat semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2950062A1 FR2950062A1 (fr) | 2011-03-18 |
FR2950062B1 true FR2950062B1 (fr) | 2012-08-03 |
Family
ID=41682253
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0956262A Active FR2950062B1 (fr) | 2009-09-11 | 2009-09-11 | Solution et procede d'activation de la surface d'un substrat semi-conducteur |
FR0959676A Expired - Fee Related FR2950063B1 (fr) | 2009-09-11 | 2009-12-30 | Solution et procede d'activation de la surface d'un substrat semi-conducteur |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0959676A Expired - Fee Related FR2950063B1 (fr) | 2009-09-11 | 2009-12-30 | Solution et procede d'activation de la surface d'un substrat semi-conducteur |
Country Status (10)
Country | Link |
---|---|
US (1) | US9181623B2 (fr) |
EP (1) | EP2475805B1 (fr) |
JP (1) | JP5764560B2 (fr) |
KR (1) | KR101689048B1 (fr) |
CN (1) | CN102482778B (fr) |
CA (1) | CA2771024C (fr) |
FR (2) | FR2950062B1 (fr) |
SG (1) | SG178390A1 (fr) |
TW (1) | TWI546410B (fr) |
WO (1) | WO2011029860A1 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2974818B1 (fr) | 2011-05-05 | 2013-05-24 | Alchimer | Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede |
CN102393400A (zh) * | 2011-11-01 | 2012-03-28 | 深南电路有限公司 | 一种印刷电路板品质监控方法 |
FR2982877B1 (fr) | 2011-11-18 | 2014-10-03 | Alchimer | Machine adaptee pour metalliser une cavite d'un substrat semi-conducteur ou conducteur telle qu'une structure du type via traversant |
KR101520048B1 (ko) * | 2012-06-28 | 2015-05-13 | 에스브이에스 주식회사 | 반도체 웨이퍼 제조장치 |
JP2014031395A (ja) * | 2012-08-01 | 2014-02-20 | Kanto Gakuin | 親水性官能基含有樹脂用のコンディショニング液、コンディショニング方法およびこれらを利用した親水性官能基含有樹脂の金属化方法 |
US10053597B2 (en) | 2013-01-18 | 2018-08-21 | Basf Se | Acrylic dispersion-based coating compositions |
CN104250729B (zh) * | 2013-06-27 | 2018-01-23 | 比亚迪股份有限公司 | 一种离子钯活化液及其制备方法和一种非金属化学镀的方法 |
JP6469657B2 (ja) * | 2013-09-26 | 2019-02-13 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH | 基材表面を金属化するための新規の密着性促進体 |
CN103476204B (zh) * | 2013-10-08 | 2016-06-08 | 复旦大学 | 一种双面板的加成制备方法 |
CN103648243B (zh) * | 2013-12-13 | 2016-05-25 | 复旦大学 | 一种多层板的加成制备方法 |
CN104167405A (zh) * | 2014-07-18 | 2014-11-26 | 清华大学 | 一种集成电路及其制备方法 |
CN104445997B (zh) * | 2014-09-09 | 2017-02-08 | 福建省飞阳光电股份有限公司 | 一种在电容式触摸屏表面进行化学镀镍的方法 |
WO2017050272A1 (fr) * | 2015-09-24 | 2017-03-30 | 杨军 | Composition pour couche de revêtement de film mince et procédé de revêtement |
CN107342374B (zh) * | 2017-08-10 | 2019-06-07 | 青岛海信电器股份有限公司 | 一种柔性基板、制备方法及其应用 |
JP7072812B2 (ja) * | 2018-03-05 | 2022-05-23 | 学校法人 芝浦工業大学 | 導体の製造方法、配線基板の製造方法及び導体形成用組成物 |
KR102311556B1 (ko) * | 2019-12-16 | 2021-10-12 | 한국과학기술원 | 표면 개질된 파릴렌 고분자 필름의 제조 방법 및 고분자 미세유체 채널의 제조 방법 |
FR3109840B1 (fr) | 2020-04-29 | 2022-05-13 | Aveni | Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND |
Family Cites Families (15)
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JPS58189365A (ja) * | 1982-04-28 | 1983-11-05 | Okuno Seiyaku Kogyo Kk | 化学メッキ用アンダーコート組成物 |
DE3424065A1 (de) * | 1984-06-29 | 1986-01-09 | Bayer Ag, 5090 Leverkusen | Verfahren zur aktivierung von substratoberflaechen fuer die stromlose metallisierung |
US5264288A (en) * | 1992-10-01 | 1993-11-23 | Ppg Industries, Inc. | Electroless process using silylated polyamine-noble metal complexes |
JP2000096252A (ja) * | 1998-09-18 | 2000-04-04 | C Uyemura & Co Ltd | ハードディスク基板へのめっき方法 |
US6645832B2 (en) | 2002-02-20 | 2003-11-11 | Intel Corporation | Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stack |
US7060624B2 (en) | 2003-08-13 | 2006-06-13 | International Business Machines Corporation | Deep filled vias |
US7101792B2 (en) | 2003-10-09 | 2006-09-05 | Micron Technology, Inc. | Methods of plating via interconnects |
JP4401912B2 (ja) | 2003-10-17 | 2010-01-20 | 学校法人早稲田大学 | 半導体多層配線板の形成方法 |
JP4871603B2 (ja) * | 2006-01-27 | 2012-02-08 | 太陽ホールディングス株式会社 | 無電解めっきプライマー用熱硬化性樹脂組成物及びそれを用いた無電解めっき処理方法 |
ES2533764T3 (es) | 2006-02-28 | 2015-04-15 | Alchimer | Formación de películas orgánicas electroinjertadas sobre la superficie de superficies conductoras o semiconductoras eléctricamente |
JP5236503B2 (ja) | 2006-02-28 | 2013-07-17 | コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフ | 水溶液から導電性または半導電性表面上に有機フィルムを形成する方法 |
JP2008007849A (ja) | 2006-06-01 | 2008-01-17 | Nippon Paint Co Ltd | 無電解めっき用プライマー組成物及び無電解めっき方法 |
US7547972B2 (en) | 2006-09-29 | 2009-06-16 | Waseda University | Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof |
JP4117016B1 (ja) * | 2007-08-15 | 2008-07-09 | 小島化学薬品株式会社 | 無電解パラジウムめっき液 |
FR2950633B1 (fr) * | 2009-09-30 | 2011-11-25 | Alchimer | Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur. |
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2009
- 2009-09-11 FR FR0956262A patent/FR2950062B1/fr active Active
- 2009-12-30 FR FR0959676A patent/FR2950063B1/fr not_active Expired - Fee Related
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- 2010-09-09 JP JP2012528355A patent/JP5764560B2/ja active Active
- 2010-09-09 EP EP10749882.6A patent/EP2475805B1/fr active Active
- 2010-09-09 KR KR1020127004085A patent/KR101689048B1/ko active IP Right Grant
- 2010-09-10 TW TW099130727A patent/TWI546410B/zh active
Also Published As
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FR2950063B1 (fr) | 2014-04-11 |
JP2013504689A (ja) | 2013-02-07 |
FR2950063A1 (fr) | 2011-03-18 |
US9181623B2 (en) | 2015-11-10 |
CA2771024C (fr) | 2018-01-02 |
SG178390A1 (en) | 2012-04-27 |
EP2475805A1 (fr) | 2012-07-18 |
CN102482778A (zh) | 2012-05-30 |
TW201124558A (en) | 2011-07-16 |
KR101689048B1 (ko) | 2016-12-22 |
EP2475805B1 (fr) | 2013-08-07 |
CN102482778B (zh) | 2014-05-07 |
KR20120073202A (ko) | 2012-07-04 |
TWI546410B (zh) | 2016-08-21 |
FR2950062A1 (fr) | 2011-03-18 |
US20120156892A1 (en) | 2012-06-21 |
WO2011029860A1 (fr) | 2011-03-17 |
JP5764560B2 (ja) | 2015-08-19 |
CA2771024A1 (fr) | 2011-03-17 |
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