FR2950063B1 - Solution et procede d'activation de la surface d'un substrat semi-conducteur - Google Patents

Solution et procede d'activation de la surface d'un substrat semi-conducteur

Info

Publication number
FR2950063B1
FR2950063B1 FR0959676A FR0959676A FR2950063B1 FR 2950063 B1 FR2950063 B1 FR 2950063B1 FR 0959676 A FR0959676 A FR 0959676A FR 0959676 A FR0959676 A FR 0959676A FR 2950063 B1 FR2950063 B1 FR 2950063B1
Authority
FR
France
Prior art keywords
activating
solution
semiconductor substrate
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0959676A
Other languages
English (en)
Other versions
FR2950063A1 (fr
Inventor
Vincent Mevellec
Dominique Suhr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alchimer SA
Original Assignee
Alchimer SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0959676A priority Critical patent/FR2950063B1/fr
Application filed by Alchimer SA filed Critical Alchimer SA
Priority to CN201080040226.4A priority patent/CN102482778B/zh
Priority to SG2012009957A priority patent/SG178390A1/en
Priority to US13/390,208 priority patent/US9181623B2/en
Priority to PCT/EP2010/063210 priority patent/WO2011029860A1/fr
Priority to CA2771024A priority patent/CA2771024C/fr
Priority to KR1020127004085A priority patent/KR101689048B1/ko
Priority to JP2012528355A priority patent/JP5764560B2/ja
Priority to EP10749882.6A priority patent/EP2475805B1/fr
Priority to TW099130727A priority patent/TWI546410B/zh
Publication of FR2950063A1 publication Critical patent/FR2950063A1/fr
Application granted granted Critical
Publication of FR2950063B1 publication Critical patent/FR2950063B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C23C18/1692—Heat-treatment
    • C23C18/1696—Control of atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2053—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
    • C23C18/2066—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
FR0959676A 2009-09-11 2009-12-30 Solution et procede d'activation de la surface d'un substrat semi-conducteur Expired - Fee Related FR2950063B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR0959676A FR2950063B1 (fr) 2009-09-11 2009-12-30 Solution et procede d'activation de la surface d'un substrat semi-conducteur
EP10749882.6A EP2475805B1 (fr) 2009-09-11 2010-09-09 Solution et procédé permettant d'activer la surface d'un substrat semi-conducteur
US13/390,208 US9181623B2 (en) 2009-09-11 2010-09-09 Solution and process for activating the surface of a semiconductor substrate
PCT/EP2010/063210 WO2011029860A1 (fr) 2009-09-11 2010-09-09 Solution et procédé permettant d'activer la surface d'un substrat semi-conducteur
CA2771024A CA2771024C (fr) 2009-09-11 2010-09-09 Solution et procede permettant d'activer la surface d'un substrat semi-conducteur
KR1020127004085A KR101689048B1 (ko) 2009-09-11 2010-09-09 반도체 기판의 표면을 활성화하는 용액 및 공정
CN201080040226.4A CN102482778B (zh) 2009-09-11 2010-09-09 对半导体衬底的表面进行活化的溶液和方法
SG2012009957A SG178390A1 (en) 2009-09-11 2010-09-09 Solution and process for activating the surface of a semiconductive substrate
JP2012528355A JP5764560B2 (ja) 2009-09-11 2010-09-09 半導体基板表面を活性化するための溶液及びプロセス
TW099130727A TWI546410B (zh) 2009-09-11 2010-09-10 活化半導體基板表面之溶液及方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0956262A FR2950062B1 (fr) 2009-09-11 2009-09-11 Solution et procede d'activation de la surface d'un substrat semi-conducteur
FR0959676A FR2950063B1 (fr) 2009-09-11 2009-12-30 Solution et procede d'activation de la surface d'un substrat semi-conducteur

Publications (2)

Publication Number Publication Date
FR2950063A1 FR2950063A1 (fr) 2011-03-18
FR2950063B1 true FR2950063B1 (fr) 2014-04-11

Family

ID=41682253

Family Applications (2)

Application Number Title Priority Date Filing Date
FR0956262A Active FR2950062B1 (fr) 2009-09-11 2009-09-11 Solution et procede d'activation de la surface d'un substrat semi-conducteur
FR0959676A Expired - Fee Related FR2950063B1 (fr) 2009-09-11 2009-12-30 Solution et procede d'activation de la surface d'un substrat semi-conducteur

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR0956262A Active FR2950062B1 (fr) 2009-09-11 2009-09-11 Solution et procede d'activation de la surface d'un substrat semi-conducteur

Country Status (10)

Country Link
US (1) US9181623B2 (fr)
EP (1) EP2475805B1 (fr)
JP (1) JP5764560B2 (fr)
KR (1) KR101689048B1 (fr)
CN (1) CN102482778B (fr)
CA (1) CA2771024C (fr)
FR (2) FR2950062B1 (fr)
SG (1) SG178390A1 (fr)
TW (1) TWI546410B (fr)
WO (1) WO2011029860A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2974818B1 (fr) 2011-05-05 2013-05-24 Alchimer Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede
CN102393400A (zh) * 2011-11-01 2012-03-28 深南电路有限公司 一种印刷电路板品质监控方法
FR2982877B1 (fr) 2011-11-18 2014-10-03 Alchimer Machine adaptee pour metalliser une cavite d'un substrat semi-conducteur ou conducteur telle qu'une structure du type via traversant
KR101520048B1 (ko) * 2012-06-28 2015-05-13 에스브이에스 주식회사 반도체 웨이퍼 제조장치
JP2014031395A (ja) * 2012-08-01 2014-02-20 Kanto Gakuin 親水性官能基含有樹脂用のコンディショニング液、コンディショニング方法およびこれらを利用した親水性官能基含有樹脂の金属化方法
US10053597B2 (en) 2013-01-18 2018-08-21 Basf Se Acrylic dispersion-based coating compositions
CN104250729B (zh) * 2013-06-27 2018-01-23 比亚迪股份有限公司 一种离子钯活化液及其制备方法和一种非金属化学镀的方法
EP3049556A1 (fr) * 2013-09-26 2016-08-03 ATOTECH Deutschland GmbH Nouveaux agents promoteurs d'adhésion pour la métallisation de surfaces de substrats
CN103476204B (zh) * 2013-10-08 2016-06-08 复旦大学 一种双面板的加成制备方法
CN103648243B (zh) * 2013-12-13 2016-05-25 复旦大学 一种多层板的加成制备方法
CN104167405A (zh) * 2014-07-18 2014-11-26 清华大学 一种集成电路及其制备方法
CN104445997B (zh) * 2014-09-09 2017-02-08 福建省飞阳光电股份有限公司 一种在电容式触摸屏表面进行化学镀镍的方法
WO2017050272A1 (fr) * 2015-09-24 2017-03-30 杨军 Composition pour couche de revêtement de film mince et procédé de revêtement
CN107342374B (zh) * 2017-08-10 2019-06-07 青岛海信电器股份有限公司 一种柔性基板、制备方法及其应用
JP7072812B2 (ja) * 2018-03-05 2022-05-23 学校法人 芝浦工業大学 導体の製造方法、配線基板の製造方法及び導体形成用組成物
KR102311556B1 (ko) * 2019-12-16 2021-10-12 한국과학기술원 표면 개질된 파릴렌 고분자 필름의 제조 방법 및 고분자 미세유체 채널의 제조 방법
FR3109840B1 (fr) 2020-04-29 2022-05-13 Aveni Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58189365A (ja) * 1982-04-28 1983-11-05 Okuno Seiyaku Kogyo Kk 化学メッキ用アンダーコート組成物
DE3424065A1 (de) * 1984-06-29 1986-01-09 Bayer Ag, 5090 Leverkusen Verfahren zur aktivierung von substratoberflaechen fuer die stromlose metallisierung
US5264288A (en) * 1992-10-01 1993-11-23 Ppg Industries, Inc. Electroless process using silylated polyamine-noble metal complexes
JP2000096252A (ja) * 1998-09-18 2000-04-04 C Uyemura & Co Ltd ハードディスク基板へのめっき方法
US6645832B2 (en) 2002-02-20 2003-11-11 Intel Corporation Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stack
US7060624B2 (en) 2003-08-13 2006-06-13 International Business Machines Corporation Deep filled vias
US7101792B2 (en) 2003-10-09 2006-09-05 Micron Technology, Inc. Methods of plating via interconnects
JP4401912B2 (ja) 2003-10-17 2010-01-20 学校法人早稲田大学 半導体多層配線板の形成方法
JP4871603B2 (ja) * 2006-01-27 2012-02-08 太陽ホールディングス株式会社 無電解めっきプライマー用熱硬化性樹脂組成物及びそれを用いた無電解めっき処理方法
US8784635B2 (en) 2006-02-28 2014-07-22 Alchimer Formation of organic electro-grafted films on the surface of electrically conductive or semi-conductive surfaces
JP5236503B2 (ja) 2006-02-28 2013-07-17 コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフ 水溶液から導電性または半導電性表面上に有機フィルムを形成する方法
JP2008007849A (ja) * 2006-06-01 2008-01-17 Nippon Paint Co Ltd 無電解めっき用プライマー組成物及び無電解めっき方法
US7547972B2 (en) 2006-09-29 2009-06-16 Waseda University Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof
JP4117016B1 (ja) * 2007-08-15 2008-07-09 小島化学薬品株式会社 無電解パラジウムめっき液
FR2950633B1 (fr) * 2009-09-30 2011-11-25 Alchimer Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur.

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CN102482778B (zh) 2014-05-07
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TWI546410B (zh) 2016-08-21
US9181623B2 (en) 2015-11-10
CA2771024C (fr) 2018-01-02
FR2950063A1 (fr) 2011-03-18
CA2771024A1 (fr) 2011-03-17
US20120156892A1 (en) 2012-06-21
FR2950062A1 (fr) 2011-03-18
KR101689048B1 (ko) 2016-12-22
EP2475805B1 (fr) 2013-08-07
KR20120073202A (ko) 2012-07-04
JP5764560B2 (ja) 2015-08-19
FR2950062B1 (fr) 2012-08-03
SG178390A1 (en) 2012-04-27
TW201124558A (en) 2011-07-16
CN102482778A (zh) 2012-05-30

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