FR2974818B1 - Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede - Google Patents
Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procedeInfo
- Publication number
- FR2974818B1 FR2974818B1 FR1153843A FR1153843A FR2974818B1 FR 2974818 B1 FR2974818 B1 FR 2974818B1 FR 1153843 A FR1153843 A FR 1153843A FR 1153843 A FR1153843 A FR 1153843A FR 2974818 B1 FR2974818 B1 FR 2974818B1
- Authority
- FR
- France
- Prior art keywords
- kit
- implementing
- semiconductor substrate
- metal layers
- cobalt metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 2
- 229910017052 cobalt Inorganic materials 0.000 title 1
- 239000010941 cobalt Substances 0.000 title 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title 1
- 238000000151 deposition Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1153843A FR2974818B1 (fr) | 2011-05-05 | 2011-05-05 | Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede |
PCT/EP2012/057085 WO2012150133A2 (fr) | 2011-05-05 | 2012-04-18 | Procédé de dépôt de couches métalliques à base de nickel ou de cobalt sur un substrat solide semi-conducteur et trousse pour application dudit procédé |
EP12714334.5A EP2705172B1 (fr) | 2011-05-05 | 2012-04-18 | Procédé de dépôt de couches métalliques à base de nickel ou de cobalt sur un substrat solide semi-conducteur et kit pour application dudit procédé |
CA2829813A CA2829813C (fr) | 2011-05-05 | 2012-04-18 | Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur et trousse pour application dudit procede |
CN201280021089.9A CN103502509B (zh) | 2011-05-05 | 2012-04-18 | 将基于镍或钴的金属层沉积在半导体固体衬底上的方法以及用来应用该方法的试剂盒 |
KR1020137026551A KR101914538B1 (ko) | 2011-05-05 | 2012-04-18 | 반전도성 고체 기판 상에 니켈 또는 코발트 기반의 금속층을 증착시키는 방법 및 상기 방법을 적용하기 위한 키트 |
US14/009,485 US9190283B2 (en) | 2011-05-05 | 2012-04-18 | Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method |
SG2013068879A SG193440A1 (en) | 2011-05-05 | 2012-04-18 | Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method |
JP2014508736A JP6067681B2 (ja) | 2011-05-05 | 2012-04-18 | 半導体固体基板へのニッケル系又はコバルト系の金属層の積層方法及びその方法を行うためのキット |
TW101115845A TWI552200B (zh) | 2011-05-05 | 2012-05-03 | 於半導電性固態基板上沈積以鎳或鈷為主之金屬層的方法及用以施行該方法之套件 |
IL228837A IL228837A (en) | 2011-05-05 | 2013-10-10 | A method for laying metallic layers based on nickel or cobalt on semiconductor solid material and a kit for applying the above method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1153843A FR2974818B1 (fr) | 2011-05-05 | 2011-05-05 | Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2974818A1 FR2974818A1 (fr) | 2012-11-09 |
FR2974818B1 true FR2974818B1 (fr) | 2013-05-24 |
Family
ID=45954686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1153843A Expired - Fee Related FR2974818B1 (fr) | 2011-05-05 | 2011-05-05 | Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede |
Country Status (11)
Country | Link |
---|---|
US (1) | US9190283B2 (fr) |
EP (1) | EP2705172B1 (fr) |
JP (1) | JP6067681B2 (fr) |
KR (1) | KR101914538B1 (fr) |
CN (1) | CN103502509B (fr) |
CA (1) | CA2829813C (fr) |
FR (1) | FR2974818B1 (fr) |
IL (1) | IL228837A (fr) |
SG (1) | SG193440A1 (fr) |
TW (1) | TWI552200B (fr) |
WO (1) | WO2012150133A2 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8652649B2 (en) | 2009-07-10 | 2014-02-18 | Xtalic Corporation | Coated articles and methods |
US20150004434A1 (en) * | 2013-07-01 | 2015-01-01 | Xtalic Corporation | Coated articles and methods comprising a rhodium layer |
US9385033B2 (en) | 2013-09-27 | 2016-07-05 | Intel Corporation | Method of forming a metal from a cobalt metal precursor |
KR102264033B1 (ko) * | 2014-02-21 | 2021-06-11 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 무전해 도금액을 이용한 관통전극의 형성방법 |
EP3034650B1 (fr) | 2014-12-16 | 2017-06-21 | ATOTECH Deutschland GmbH | Compositions de bain de placage pour un dépôt autocatalytique de métaux et d'alliages métalliques |
US10995417B2 (en) * | 2015-06-30 | 2021-05-04 | Macdermid Enthone Inc. | Cobalt filling of interconnects in microelectronics |
FR3042133B1 (fr) * | 2015-10-08 | 2022-02-11 | Aveni | Procede de greffage de film mince polymerique sur substrat et procede de metallisation de ce film mince |
ES2834877T3 (es) * | 2018-01-26 | 2021-06-21 | Atotech Deutschland Gmbh | Baño de enchapado en oro electrolítico |
CN110129839B (zh) * | 2019-05-20 | 2021-05-14 | 江西鹏凯环保工程设备有限公司 | 一种镀铜光亮剂的制备方法 |
FR3109840B1 (fr) | 2020-04-29 | 2022-05-13 | Aveni | Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND |
CN112663033B (zh) * | 2020-12-16 | 2021-09-28 | 昆山成功环保科技有限公司 | 环保型化学沉镍溶液 |
FR3119848A1 (fr) * | 2021-02-18 | 2022-08-19 | Aveni | Electrolyte et Procédé d’électrodéposition de cobalt |
CN113104882B (zh) * | 2021-03-11 | 2022-10-11 | 南昌大学 | 一种电化学碳掺杂可变价态过渡金属氧化物的方法 |
CN116350852A (zh) * | 2022-11-17 | 2023-06-30 | 上海市伤骨科研究所 | 提升力学性能并多位点捕获铜离子的纤维海绵支架及制法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004346422A (ja) * | 2003-05-23 | 2004-12-09 | Rohm & Haas Electronic Materials Llc | めっき方法 |
JP4401912B2 (ja) * | 2003-10-17 | 2010-01-20 | 学校法人早稲田大学 | 半導体多層配線板の形成方法 |
EP1717344A4 (fr) * | 2004-01-23 | 2008-08-20 | Ebara Corp | Procede de traitement de substrat, liquide de processus catalytique et appareil de traitement de substrat |
JP4780585B2 (ja) * | 2006-03-22 | 2011-09-28 | 奥野製薬工業株式会社 | 無電解ニッケルめっき液 |
US7547972B2 (en) | 2006-09-29 | 2009-06-16 | Waseda University | Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof |
JP5377831B2 (ja) | 2007-03-14 | 2013-12-25 | Jx日鉱日石金属株式会社 | ダマシン銅配線用シード層形成方法、及びこの方法を用いてダマシン銅配線を形成した半導体ウェハー |
FR2933425B1 (fr) * | 2008-07-01 | 2010-09-10 | Alchimer | Procede de preparation d'un film isolant electrique et application pour la metallisation de vias traversants |
FR2935713B1 (fr) | 2008-09-08 | 2010-12-10 | Alchimer | Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede |
FR2950062B1 (fr) | 2009-09-11 | 2012-08-03 | Alchimer | Solution et procede d'activation de la surface d'un substrat semi-conducteur |
FR2950633B1 (fr) | 2009-09-30 | 2011-11-25 | Alchimer | Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur. |
FR2950863B1 (fr) | 2009-10-06 | 2012-03-02 | Snecma | Circuit d'alimentation en carburant d'un moteur d'aeronef |
-
2011
- 2011-05-05 FR FR1153843A patent/FR2974818B1/fr not_active Expired - Fee Related
-
2012
- 2012-04-18 CN CN201280021089.9A patent/CN103502509B/zh active Active
- 2012-04-18 CA CA2829813A patent/CA2829813C/fr active Active
- 2012-04-18 KR KR1020137026551A patent/KR101914538B1/ko active IP Right Grant
- 2012-04-18 EP EP12714334.5A patent/EP2705172B1/fr active Active
- 2012-04-18 US US14/009,485 patent/US9190283B2/en active Active
- 2012-04-18 SG SG2013068879A patent/SG193440A1/en unknown
- 2012-04-18 WO PCT/EP2012/057085 patent/WO2012150133A2/fr active Application Filing
- 2012-04-18 JP JP2014508736A patent/JP6067681B2/ja active Active
- 2012-05-03 TW TW101115845A patent/TWI552200B/zh active
-
2013
- 2013-10-10 IL IL228837A patent/IL228837A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
FR2974818A1 (fr) | 2012-11-09 |
EP2705172A2 (fr) | 2014-03-12 |
IL228837A (en) | 2017-12-31 |
TW201250793A (en) | 2012-12-16 |
KR20140034768A (ko) | 2014-03-20 |
US9190283B2 (en) | 2015-11-17 |
US20140087560A1 (en) | 2014-03-27 |
TWI552200B (zh) | 2016-10-01 |
WO2012150133A3 (fr) | 2013-04-18 |
SG193440A1 (en) | 2013-10-30 |
KR101914538B1 (ko) | 2018-11-02 |
WO2012150133A2 (fr) | 2012-11-08 |
IL228837A0 (en) | 2013-12-31 |
CN103502509B (zh) | 2015-11-25 |
EP2705172B1 (fr) | 2018-03-28 |
CA2829813C (fr) | 2020-04-14 |
CN103502509A (zh) | 2014-01-08 |
JP2014513213A (ja) | 2014-05-29 |
JP6067681B2 (ja) | 2017-01-25 |
CA2829813A1 (fr) | 2012-11-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
PLFP | Fee payment |
Year of fee payment: 9 |
|
ST | Notification of lapse |
Effective date: 20210105 |