FR2935713B1 - Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede - Google Patents
Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procedeInfo
- Publication number
- FR2935713B1 FR2935713B1 FR0856012A FR0856012A FR2935713B1 FR 2935713 B1 FR2935713 B1 FR 2935713B1 FR 0856012 A FR0856012 A FR 0856012A FR 0856012 A FR0856012 A FR 0856012A FR 2935713 B1 FR2935713 B1 FR 2935713B1
- Authority
- FR
- France
- Prior art keywords
- carrying
- barrier layers
- solid substrate
- copper diffusion
- repair kit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 2
- 230000004888 barrier function Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0856012A FR2935713B1 (fr) | 2008-09-08 | 2008-09-08 | Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede |
US13/003,451 US8524512B2 (en) | 2008-09-08 | 2009-09-07 | Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method |
PCT/EP2009/061527 WO2010026243A1 (fr) | 2008-09-08 | 2009-09-07 | Procédé de réparation de couches de barrière de diffusion du cuivre sur un substrat solide semi-conducteur et nécessaire de réparation pour mettre en œuvre ce procédé |
KR1020117002955A KR20110056485A (ko) | 2008-09-08 | 2009-09-07 | 반도체 고형 기판 상에 구리확산 배리어 층을 수선하는 방법 및 이 방법을 실행하기 위한 수선 키트 |
CA2732661A CA2732661A1 (fr) | 2008-09-08 | 2009-09-07 | Procede de reparation de couches de barriere de diffusion du cuivre sur un substrat solide semi-conducteur et necessaire de reparation pour mettre en oeuvre ce procede |
TW098130255A TW201021113A (en) | 2008-09-08 | 2009-09-08 | Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method |
IL210644A IL210644A0 (en) | 2008-09-08 | 2011-01-13 | Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0856012A FR2935713B1 (fr) | 2008-09-08 | 2008-09-08 | Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2935713A1 FR2935713A1 (fr) | 2010-03-12 |
FR2935713B1 true FR2935713B1 (fr) | 2010-12-10 |
Family
ID=40551878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0856012A Expired - Fee Related FR2935713B1 (fr) | 2008-09-08 | 2008-09-08 | Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede |
Country Status (7)
Country | Link |
---|---|
US (1) | US8524512B2 (fr) |
KR (1) | KR20110056485A (fr) |
CA (1) | CA2732661A1 (fr) |
FR (1) | FR2935713B1 (fr) |
IL (1) | IL210644A0 (fr) |
TW (1) | TW201021113A (fr) |
WO (1) | WO2010026243A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2935713B1 (fr) * | 2008-09-08 | 2010-12-10 | Alchimer | Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede |
FR2974818B1 (fr) | 2011-05-05 | 2013-05-24 | Alchimer | Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede |
US8981564B2 (en) | 2013-05-20 | 2015-03-17 | Invensas Corporation | Metal PVD-free conducting structures |
CN110512198A (zh) * | 2019-09-24 | 2019-11-29 | 苏州天承化工有限公司 | 一种化学镀铜液、化学镀铜膜及其制备方法 |
KR102485602B1 (ko) * | 2020-09-18 | 2023-01-06 | 공주대학교 산학협력단 | TBAB(tert-butylamine borane, 3차 부틸아민보란)를 포함한, 리튬 이온 전지의 전극 단자 도금용 니켈-보론 무전해 도금액, 이를 이용한 니켈-보론 무전해 도금 방법, 및 이를 이용하여 제조된 니켈-보론 무전해 도금층이 형성된 리튬 이온 전지의 전극 단자 |
WO2023279111A1 (fr) * | 2021-07-02 | 2023-01-05 | Coreshell Technologies, Inc. | Couches de germe nanostructurées pour dépôt de lithium métallique |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958048A (en) * | 1974-04-22 | 1976-05-18 | Crown City Plating Company | Aqueous suspensions for surface activation of nonconductors for electroless plating |
DE3177050D1 (en) * | 1981-11-20 | 1989-06-15 | Learonal Inc | Copper colloid and method of activating insulating surfaces for subsequent electroplating |
DE4241045C1 (de) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
US6136693A (en) * | 1997-10-27 | 2000-10-24 | Chartered Semiconductor Manufacturing Ltd. | Method for planarized interconnect vias using electroless plating and CMP |
KR100425458B1 (ko) * | 2001-08-21 | 2004-03-30 | 삼성전자주식회사 | 무전해 도금을 이용한 금속 배선 형성 방법 |
US6645832B2 (en) | 2002-02-20 | 2003-11-11 | Intel Corporation | Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stack |
JP2004346422A (ja) * | 2003-05-23 | 2004-12-09 | Rohm & Haas Electronic Materials Llc | めっき方法 |
US7060624B2 (en) | 2003-08-13 | 2006-06-13 | International Business Machines Corporation | Deep filled vias |
US7101792B2 (en) | 2003-10-09 | 2006-09-05 | Micron Technology, Inc. | Methods of plating via interconnects |
WO2006058034A2 (fr) * | 2004-11-22 | 2006-06-01 | Intermolecular, Inc. | Auto-assemblage moleculaire dans le traitement d'un substrat |
US7695981B2 (en) * | 2005-05-13 | 2010-04-13 | Siluria Technologies, Inc. | Seed layers, cap layers, and thin films and methods of making thereof |
US7625814B2 (en) * | 2006-03-29 | 2009-12-01 | Asm Nutool, Inc. | Filling deep features with conductors in semiconductor manufacturing |
US7994640B1 (en) * | 2007-07-02 | 2011-08-09 | Novellus Systems, Inc. | Nanoparticle cap layer |
FR2935713B1 (fr) * | 2008-09-08 | 2010-12-10 | Alchimer | Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede |
-
2008
- 2008-09-08 FR FR0856012A patent/FR2935713B1/fr not_active Expired - Fee Related
-
2009
- 2009-09-07 KR KR1020117002955A patent/KR20110056485A/ko not_active Application Discontinuation
- 2009-09-07 US US13/003,451 patent/US8524512B2/en not_active Expired - Fee Related
- 2009-09-07 WO PCT/EP2009/061527 patent/WO2010026243A1/fr active Application Filing
- 2009-09-07 CA CA2732661A patent/CA2732661A1/fr not_active Abandoned
- 2009-09-08 TW TW098130255A patent/TW201021113A/zh unknown
-
2011
- 2011-01-13 IL IL210644A patent/IL210644A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR2935713A1 (fr) | 2010-03-12 |
WO2010026243A1 (fr) | 2010-03-11 |
US20110294231A1 (en) | 2011-12-01 |
US8524512B2 (en) | 2013-09-03 |
CA2732661A1 (fr) | 2010-03-11 |
IL210644A0 (en) | 2011-03-31 |
TW201021113A (en) | 2010-06-01 |
KR20110056485A (ko) | 2011-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20130531 |