DK2144296T3 - Fremgangsmåde til fremstilling af et halvlederlag - Google Patents
Fremgangsmåde til fremstilling af et halvlederlagInfo
- Publication number
- DK2144296T3 DK2144296T3 DK08020746.7T DK08020746T DK2144296T3 DK 2144296 T3 DK2144296 T3 DK 2144296T3 DK 08020746 T DK08020746 T DK 08020746T DK 2144296 T3 DK2144296 T3 DK 2144296T3
- Authority
- DK
- Denmark
- Prior art keywords
- making
- semiconductor layer
- semiconductor
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5866—Treatment with sulfur, selenium or tellurium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08011247.7A EP2144026B1 (de) | 2008-06-20 | 2008-06-20 | Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern |
Publications (1)
Publication Number | Publication Date |
---|---|
DK2144296T3 true DK2144296T3 (da) | 2014-07-07 |
Family
ID=39790989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK08020746.7T DK2144296T3 (da) | 2008-06-20 | 2008-11-28 | Fremgangsmåde til fremstilling af et halvlederlag |
Country Status (15)
Country | Link |
---|---|
US (2) | US9082796B2 (da) |
EP (2) | EP2144026B1 (da) |
JP (1) | JP5647977B2 (da) |
KR (1) | KR101645950B1 (da) |
CN (1) | CN102124291B (da) |
AU (1) | AU2009259641B2 (da) |
CY (1) | CY1115309T1 (da) |
DK (1) | DK2144296T3 (da) |
ES (2) | ES2581378T3 (da) |
HR (1) | HRP20140615T1 (da) |
PL (1) | PL2144296T3 (da) |
PT (1) | PT2144296E (da) |
SI (1) | SI2144296T1 (da) |
WO (1) | WO2009153059A1 (da) |
ZA (1) | ZA201100063B (da) |
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KR20140085584A (ko) * | 2011-12-28 | 2014-07-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 그것을 이용한 기판 처리 방법 |
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JP5246839B2 (ja) † | 2006-08-24 | 2013-07-24 | 独立行政法人産業技術総合研究所 | 半導体薄膜の製造方法、半導体薄膜の製造装置、光電変換素子の製造方法及び光電変換素子 |
US7867551B2 (en) * | 2006-09-21 | 2011-01-11 | Solopower, Inc. | Processing method for group IBIIIAVIA semiconductor layer growth |
US9460945B2 (en) * | 2006-11-06 | 2016-10-04 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus for semiconductor devices |
JP5244170B2 (ja) * | 2008-04-17 | 2013-07-24 | 本田技研工業株式会社 | 太陽電池の熱処理装置 |
-
2008
- 2008-06-20 ES ES08011247.7T patent/ES2581378T3/es active Active
- 2008-06-20 EP EP08011247.7A patent/EP2144026B1/de not_active Not-in-force
- 2008-11-28 PL PL08020746T patent/PL2144296T3/pl unknown
- 2008-11-28 PT PT80207467T patent/PT2144296E/pt unknown
- 2008-11-28 EP EP08020746.7A patent/EP2144296B2/de not_active Not-in-force
- 2008-11-28 SI SI200831237T patent/SI2144296T1/sl unknown
- 2008-11-28 DK DK08020746.7T patent/DK2144296T3/da active
- 2008-11-28 ES ES08020746.7T patent/ES2476799T5/es active Active
-
2009
- 2009-06-19 CN CN200980131770.7A patent/CN102124291B/zh not_active Expired - Fee Related
- 2009-06-19 JP JP2011513956A patent/JP5647977B2/ja not_active Expired - Fee Related
- 2009-06-19 WO PCT/EP2009/004459 patent/WO2009153059A1/de active Application Filing
- 2009-06-19 AU AU2009259641A patent/AU2009259641B2/en not_active Ceased
- 2009-06-19 US US13/000,355 patent/US9082796B2/en not_active Expired - Fee Related
- 2009-06-19 KR KR1020117001447A patent/KR101645950B1/ko active IP Right Grant
- 2009-11-30 US US13/131,802 patent/US8846442B2/en not_active Expired - Fee Related
-
2011
- 2011-01-03 ZA ZA2011/00063A patent/ZA201100063B/en unknown
-
2014
- 2014-06-30 HR HRP20140615AT patent/HRP20140615T1/hr unknown
- 2014-07-01 CY CY20141100479T patent/CY1115309T1/el unknown
Also Published As
Publication number | Publication date |
---|---|
ES2476799T3 (es) | 2014-07-15 |
AU2009259641A1 (en) | 2009-12-23 |
PL2144296T3 (pl) | 2014-09-30 |
EP2144026A1 (de) | 2010-01-13 |
ES2581378T3 (es) | 2016-09-05 |
KR20110039535A (ko) | 2011-04-19 |
EP2144296B1 (de) | 2014-04-02 |
CY1115309T1 (el) | 2017-01-04 |
ZA201100063B (en) | 2011-10-26 |
KR101645950B1 (ko) | 2016-08-12 |
US9082796B2 (en) | 2015-07-14 |
JP2011524644A (ja) | 2011-09-01 |
AU2009259641B2 (en) | 2015-04-09 |
SI2144296T1 (sl) | 2014-08-29 |
EP2144296A1 (de) | 2010-01-13 |
EP2144026B1 (de) | 2016-04-13 |
CN102124291A (zh) | 2011-07-13 |
WO2009153059A1 (de) | 2009-12-23 |
US8846442B2 (en) | 2014-09-30 |
HRP20140615T1 (hr) | 2014-08-15 |
US20110183461A1 (en) | 2011-07-28 |
CN102124291B (zh) | 2014-10-15 |
JP5647977B2 (ja) | 2015-01-07 |
EP2144296B2 (de) | 2018-01-17 |
ES2476799T5 (es) | 2018-05-03 |
PT2144296E (pt) | 2014-08-01 |
US20120015476A1 (en) | 2012-01-19 |
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