HRP20140615T1 - Postupak dobivanja poluvodiäśkog sloja - Google Patents

Postupak dobivanja poluvodiäśkog sloja Download PDF

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HRP20140615T1
HRP20140615T1 HRP20140615AT HRP20140615T HRP20140615T1 HR P20140615 T1 HRP20140615 T1 HR P20140615T1 HR P20140615A T HRP20140615A T HR P20140615AT HR P20140615 T HRP20140615 T HR P20140615T HR P20140615 T1 HRP20140615 T1 HR P20140615T1
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selenium
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Volker Probst
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Volker Probst
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5866—Treatment with sulfur, selenium or tellurium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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Claims (15)

1. Postupak dobivanja poluvodičkog sloja u kojem se najmanje jedan supstrat (12) koji ima na sebi metalni sloj stavlja u radnu komoru (14), te grije do temperature zadane za supstrat, naznačen time što se pare elementarnog selenija i/ili sumpora iz izvora (102, 104), koji se po mogućnosti nalazi izvan radne komore (14), provodi uz pomoć, po mogućnosti inertnog, plina nosača (118) u uvjetima grubog vakuuma ili tlaka okoliša ili predtlaka preko navedenog metalnog sloja kako bi se provelo ciljanu kemijsku reakciju metalnog sloja sa selenijem odnosno sumporom, te što se supstrat (12) grije prisilnom konvekcijom uz pomoć naprave za dovođenje plina, po mogućnosti ventilatora, gdje se pare elementarnog selenija i/ili sumpora homogeno umiješa prisilnom konvekcijom uz pomoć naprave za dovođenje plina u radni prostor, te provodi preko supstrata (12), gdje se u protoku plina što ga uzrokuje naprava za dovođenje plina nalazi grijaća jedinica (36), koja grije plin u radnoj komori (14).
2. Postupak dobivanja poluvodičkog sloja u skladu s patentnim zahtjevom 1, u kojem se stog (66) supstrata (12), od kojih svaki na sebi ima metalni sloj, stavlja u radnu komoru (14), te grije do temperature zadane za supstrat; gdje se pare elementarnog selenija i/ili sumpora iz izvora (102, 104) koji se nalazi izvan radne komore (14) provodi uz pomoć inertnog plina nosača (118) u uvjetima grubog vakuuma ili tlaka okoliša ili predtlaka preko svakog metalnog sloja kako bi se provelo ciljanu kemijsku reakciju metalnog sloja sa selenijem ili sumporom, naznačen time što se supstrat (12) grije prisilnom konvekcijom uz pomoć naprave za dovođenje plina, po mogućnosti ventilatora, gdje se pare elementarnog selenija i/ili sumpora homogeno umiješa prisilnom konvekcijom uz pomoć naprave za dovođenje plina u radni prostor, te provodi preko supstrata (12).
3. Postupak u skladu s patentnim zahtjevom 1 ili 2, naznačen time što se izvor (102, 104) drži na povišenoj temperaturi ili kontrolira radi grijanja do povišene temperature izvora, koja je za vrijeme provođenja para elementarnog selenija i/ili sumpora uz supstrat (12) niža od temperature u radnoj komori (14) i niža je od minimalne temperature supstrata.
4. Postupak u skladu s bilo kojim od prethodnih patentnih zahtjeva, naznačen time što se dovod (100) kojim se pure elementarnog selenija i ili sumpora dovode i/ izvora (102. 104) do supstrata (12). i ili stjenka (16) koja oivičuje radnu komoru (14) drže na istoj ili temperaturi višoj od temperature izvora (102, 104).
5. Postupak u skladu s bilo kojim od prethodnih patentnih zahtjeva, naznačen time što je upotrijebljeni izvor (102, 104) bućkalica koja sadrži tekući selenij ili tekući sumpor kroz koju se uvodi plin nosač (118) i/ili lonac za taljenje (114) napunjen tekućim selenijem ili sumporom, koji ima stranu koja omogućuje isparavanje selenija ili sumpora i preko koje se provodi plin nosač (118).
6. Postupak u skladu s bilo kojim od prethodnih patentnih zahtjeva, naznačen time što se kemijsku reakciju selenija i/ili sumpora s metalnim slojem provodi pod ukupnim tlakom u radnoj komori (14) u rasponu od uvjeta grubog vakuuma, tlaka okoliša do predtlaka i/ili pod parcijalnim tlakom para selenija ili sumpora u rasponu od otprilike 0,001 mbar (0,1 Pa) do otprilike 100 mbar (10 kPa).
7. Postupak u skladu s bilo kojim od prethodnih patentnih zahtjeva, naznačen time što se sastoji u sljedećim koracima: - povišenja temperature supstrata uz brzinu grijanja od otprilike 5°C u minuti do 600°C u minuti, po mogućnosti 10 °C u minuti do 60°C u minuti, od sobne temperature do temperature u rasponu od otprilike 400°C do 600°C, po mogućnosti 400°C do 500°C; - dovođenja para elementarnog selenija u radnu komom od temperature supstrata između 120°C i 300°C, uz podešavanje temperature izvora selenija do željenog parcijalnog tlaka, po mogućnosti između 0,001 mbar (0,1 Pa) i 100 mbar (10 kPa); - održavanja temperature supstrata u rasponu od 400°C do 600°C u trajanju od 1 minute do 60 minuta, po mogućnosti u trajanju od 10 minuta do 30 minuta; - prekida dovođenja para elementarnog selenija i, izborno, sumpora u radnu komoru nakon prvog zadanog vremenskog perioda; - najmanje jednog ispuhivanja i/ili propuhivanja radne komore; - dovođenja para elementarnog sumpora u radnu komoru; - dodatnog povišenja temperature supstrata uz brzinu grijanja od otprilike 5°C u minuti do 600°C u minuti, po mogućnosti 10°C u minuti do 60°C u minuti, do temperature u rasponu od otprilike 450°C do 650°C. po mogućnosti 500°C do 550°C, a također uz podešavanje temperature izvora sumpora do željenog parcijalnog tlaka, po mogućnosti između 0,001 mbar (0,1 Pa) i 100 mbar (10 kPa); - održavanja temperature supstrata u rasponu od 450°C do 650°C u trajanju od 1 minute do 60 minuta, po mogućnosti u trajanju od 10 minuta do 30 minuta; - prekida dovođenja para elementarnog sumpora u radnu komoru nakon drugog zadanog vremenskog perioda; - hlađenja supstrata; i - ispuhivanja i/ili propuhivanja radne komore.
8. Postupak u skladu s bilo kojim od prethodnih patentnih zahtjeva, naznačen time što se u koraku seleniziranja, primjerice kod temperature supstrata od 120°C do 600 °C, pare elementarnog sumpora dovodi u radnu komoru na takav način da se postigne omjer između parcijalnih tlakova selenija i sumpora između 0 i 0,9, po mogućnosti između 0,1 i 0,3.
9. Postupak u skladu s bilo kojim od patentnih zahtjeva 1 do 6, naznačen time što metalni sloj sadrži najmanje jedan od sljedećih elemenata: In, Zn ili Mg i/ili gdje je poluvodički sloj kojeg treba dobiti izolacijski sloj, sloj In2S3, ZnSe. ZnS, Zn(S,OH) ili (ZnMg)O.
10. Postupak u skladu s patentnim zahtjevom 9, naznačen time što se najmanje jedan reaktivni plin, poput kisika ili vodika, pomiješa s plinom nosačem (118) koji sadrži selenij i/ili sumpor.
11. Radni uređaj (10) za provođenje postupka u skladu s bilo kojim od prethodnih patentnih zahtjeva koji sadrži radnu komoru (14) koju se može evakuirati, namijenjenu za prihvat najmanje jednog supstrata (12) kojeg treba obraditi, grijaća jedinica (36) za konvektivno grijanje supstrata (12) kojeg treba obraditi, izvor (102, 104) para elementarnog selenija i/ili sumpora, koji se nalazi izvan navedene radne komore (14) i povezan je s navedenom radnom komorom (14) putem dovoda (100), te uređaj za kontrolu temperature (18, 126) za održavanje svakog od u najmanju ruku dijela područja stijenke (16) koja oivičuje radnu komoru (14) i u najmanju ruku dijela dovoda (100) na zadanoj temperaturi, naznačen time što sadrži napravu za dovođenje plina koja uzrokuje protok plina u radnoj komori (14), gdje navedena naprava za dovođenje plina po mogućnosti uključuje najmanje jedan ventilator (46, 50), koji se po mogućnosti nalazi u području jednog od prednjih krajeva supstrata (12).
12. Radni uređaj (10) za provođenje postupka u skladu s patentnim zahtjevom 11 koji sadrži radnu komoru (14) koju se može evakuirati, namijenjenu za prihvat stoga (66) supstrata (12) kojeg treba obraditi, grijaću jedinicu (36) za konvektivno grijanje supstrata (12) kojeg treba obraditi, izvor (102, 104) para elementarnog selenija i/ili sumpora, koji se nalazi izvan navedene radne komore (14) i povezan je s navedenom radnom komorom (14) putem dovoda (100), te uređaj za kontrolu temperature (18, 126) za održavanje u najmanju ruku dijela područja stijenke (16) koja oivičuje radnu komoru (14) i u najmanju ruku dijela dovoda (100) na zadanoj temperaturi, naznačen time što sadrži napravu za dovođenje plina protok plina što ga uzrokuje u radnoj komori (14), gdje navedena naprava za dovođenje plina po mogućnosti uključuje najmanje jedan ventilator (46, 50), koji se po mogućnosti nalazi u području jednog od prednjih krajeva stoga supstrata (66).
13. Uređaj u skladu s patentnim zahtjevom 11 ili 12, naznačen time što izvor (102, 104) sadrži komoru izvora (110) koju se može grijati i evakuirati, u kojoj se nalazi lonac za taljenje (114) napunjen rastaljenim selenijem ili sumporom, te koji uključuje dovod (116) predgrijanog plina nosača (118), tako da se navedeni plin nosač (118) bilo provodi kroz rastaljeni selenij ili sumpor (112, 120) prema principu bućkalice ili se provodi preko površine rastaljenog selenija ili sumpora (112, 120), gdje se lonac za taljenje (114) i dovod (116) sastoje od materijala otpornog na reakciju sa selenijem ili sumporom i primjerice su načinjeni od keramike, kremena, specijalnih metalnih legura ili metala otpornih na koroziju, s premazom otpornim na koroziju.
14. Uređaj u skladu s bilo kojim od patentnih zahtjeva 11 do 13, naznačen time što se u protoku plina kojeg uzrokuje naprava za dovođenje plina nalazi grijaća jedinica (36), koja grije sav plin prisutan u radnoj komori (14); i/ili rashladni element (40) za hlađenje plina koji se nalazi u protoku plina kojeg uzrokuje naprava za dovođenje plina u radnoj komori (14); i/ili su ugrađeni elementi za preusmjeravanje plina (54, 56), koji preusmjeravaju protok plina, tako da se u protoku plina nalazi bilo grijaća jedinica (36) ili rashladna jedinica (40).
15. Stroj za obradu ustoženih supstrata (12) koji sadrži najmanje jedan radni uređaj (10) u skladu s bilo kojim od patentnih zahtjeva 11 do 14, naznačen time što radni uređaj (10) sadrži otvor za punjenje (60) kroz koji se stog supstrata (66) može staviti u radnu komoru (14), te sadrži otvor za pražnjenje (70) kroz koji se stog supstrata (66) može izvaditi iz radne komore (14).
HRP20140615AT 2008-06-20 2014-06-30 Postupak dobivanja poluvodiäśkog sloja HRP20140615T1 (hr)

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EP (2) EP2144026B1 (hr)
JP (1) JP5647977B2 (hr)
KR (1) KR101645950B1 (hr)
CN (1) CN102124291B (hr)
AU (1) AU2009259641B2 (hr)
CY (1) CY1115309T1 (hr)
DK (1) DK2144296T3 (hr)
ES (2) ES2581378T3 (hr)
HR (1) HRP20140615T1 (hr)
PL (1) PL2144296T3 (hr)
PT (1) PT2144296E (hr)
SI (1) SI2144296T1 (hr)
WO (1) WO2009153059A1 (hr)
ZA (1) ZA201100063B (hr)

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Publication number Priority date Publication date Assignee Title
US20170236710A1 (en) * 2007-09-05 2017-08-17 Ascent Solar Technologies, Inc. Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers
AU2009319350B2 (en) * 2008-11-28 2015-10-29 Volker Probst Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates
DE102010008084A1 (de) * 2010-02-15 2011-08-18 Leybold Optics GmbH, 63755 Vorrichtung zur thermischen Behandlung von Substraten
DE102010024495A1 (de) * 2010-06-21 2011-12-22 Schott Ag Auskleidungs- oder Reflektormaterial für Hochtemperaturanwendungen
US20120168143A1 (en) * 2010-12-30 2012-07-05 Poole Ventura, Inc. Thermal Diffusion Chamber With Heat Exchanger
US8950470B2 (en) * 2010-12-30 2015-02-10 Poole Ventura, Inc. Thermal diffusion chamber control device and method
US20130153201A1 (en) * 2010-12-30 2013-06-20 Poole Ventura, Inc. Thermal diffusion chamber with cooling tubes
US8998606B2 (en) * 2011-01-14 2015-04-07 Stion Corporation Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices
US8097085B2 (en) * 2011-01-28 2012-01-17 Poole Ventura, Inc. Thermal diffusion chamber
US9333526B2 (en) * 2011-02-17 2016-05-10 Frank A. Liporace Device for coating bone plate
KR20120097792A (ko) * 2011-02-25 2012-09-05 삼성전자주식회사 퍼니스와 이를 이용한 박막 형성 방법
JP2012222157A (ja) * 2011-04-08 2012-11-12 Hitachi Kokusai Electric Inc 基板処理装置、及び、太陽電池の製造方法
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
JP5698059B2 (ja) 2011-04-08 2015-04-08 株式会社日立国際電気 基板処理装置、及び、太陽電池の製造方法
DE102011053049A1 (de) 2011-08-26 2013-02-28 DSeTec GmbH & Co. KG Vorrichtung und Verfahren zur Beschichtung eines Substrats
EP2748839A1 (de) 2011-08-26 2014-07-02 Dsetec GmbH & Co. KG Vorrichtung und verfahren zur beschichtung eines substrats
DE102011053050A1 (de) 2011-08-26 2013-02-28 DSeTec GmbH & Co. KG Vorrichtung und Verfahren zur Beschichtung eines Substrats
WO2013081095A1 (ja) * 2011-12-01 2013-06-06 株式会社日立国際電気 基板処理装置、及び、搬送装置
KR20140085584A (ko) * 2011-12-28 2014-07-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 그것을 이용한 기판 처리 방법
CN104919580B (zh) * 2012-07-09 2017-09-29 法国圣戈班玻璃厂 用于对物体进行热处理的装置和方法
US9926626B2 (en) 2012-07-09 2018-03-27 Bengbu Design & Research Institute For Glass Industry System and method for processing substrates
CN103575094A (zh) * 2012-07-27 2014-02-12 苏州工业园区杰士通真空技术有限公司 一种真空炉对流加热装置
CN103572089B (zh) * 2013-11-12 2015-10-28 中国科学院金属研究所 一种铜铟镓硒四元半导体合金的制备方法
US20180127875A1 (en) * 2016-11-04 2018-05-10 National Chung Shan Institute Of Science And Technology Apparatus for performing selenization and sulfurization process on glass substrate
TWI604630B (zh) * 2016-12-13 2017-11-01 茂迪股份有限公司 半導體基板的處理裝置
KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
DE102018100745B3 (de) 2018-01-15 2019-05-09 Ebner Industrieofenbau Gmbh Konvektionsofen
CN108444289B (zh) * 2018-03-30 2024-05-31 南京望天科技有限公司 一种气流式箱式电阻炉
JP2020041737A (ja) * 2018-09-10 2020-03-19 光洋サーモシステム株式会社 熱処理装置
KR102204918B1 (ko) 2019-07-30 2021-01-19 피씨엘 주식회사 다중 바이오마커 동시 분석 기기 및 다중 바이오마커 동시 분석 방법
CN110713384A (zh) * 2019-10-25 2020-01-21 中航复合材料有限责任公司 一种销钉连接SiC/SiC复合材料的方法
CN110963818A (zh) * 2019-11-19 2020-04-07 中航复合材料有限责任公司 一种销钉连接SiC/SiC复合材料的方法

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE795780A (fr) * 1972-02-23 1973-08-22 Ugine Infra Four de traitement thermique a selecteur d'operations
DE3586847T2 (de) † 1985-03-22 1993-05-19 Siemens Solar Ind Lp Herstellungsverfahren eines zusammengesetzten halbleiters.
JPH0697140B2 (ja) * 1985-12-03 1994-11-30 大同特殊鋼株式会社 焼結炉
US5045409A (en) † 1987-11-27 1991-09-03 Atlantic Richfield Company Process for making thin film solar cell
US5015503A (en) † 1990-02-07 1991-05-14 The University Of Delaware Apparatus for producing compound semiconductor thin films
JPH05157461A (ja) * 1991-12-03 1993-06-22 Daido Steel Co Ltd 加熱炉
EP0743686A3 (en) * 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Precursor for semiconductor thin films and method for producing semiconductor thin films
DE19611996C1 (de) † 1996-03-26 1997-09-11 Siemens Solar Gmbh Solarzelle mit einer Chalkopyritabsorberschicht und Verfahren zu ihrer Herstellung
JPH1012635A (ja) * 1996-04-26 1998-01-16 Yazaki Corp Ｉ−ｉｉｉ−ｖｉ２系薄膜層の形成方法及びその形成装置
DE19634580C2 (de) † 1996-08-27 1998-07-02 Inst Solar Technologien Verfahren zur Herstellung einer CIS-Bandsolarzelle und Vorrichtung zur Durchführung des Verfahrens
JP3340044B2 (ja) * 1996-12-27 2002-10-28 京セラ株式会社 加熱装置
KR100238944B1 (ko) † 1997-01-09 2000-01-15 윤종용 반도체장치 제조용 베이크설비의 공정챔버 도어개폐장치
US6427622B2 (en) * 1998-08-28 2002-08-06 Mv Systems, Inc. Hot wire chemical vapor deposition method and apparatus using graphite hot rods
JP3089407B2 (ja) * 1998-10-09 2000-09-18 工業技術院長 太陽電池薄膜の作製方法
WO2001029901A2 (de) * 1999-10-20 2001-04-26 Siemens Aktiengesellschaft Vorrichtung und verfahren zum temperieren mindestens eines prozessierguts
US6949202B1 (en) * 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
JP2001185502A (ja) * 1999-12-22 2001-07-06 Mitsubishi Electric Corp 半導体素子製造工程における不純物拡散方法、同方法に用いる不純物拡散装置および同方法から製造された半導体素子
TW483037B (en) * 2000-03-24 2002-04-11 Hitachi Ltd Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
US6533991B1 (en) * 2000-06-20 2003-03-18 Ipsen International, Inc. Cooling gas injection nozzle for a vacuum heat treating furnace
US6451692B1 (en) * 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US6797336B2 (en) * 2001-03-22 2004-09-28 Ambp Tech Corporation Multi-component substances and processes for preparation thereof
US7842882B2 (en) * 2004-03-01 2010-11-30 Basol Bulent M Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
TW573053B (en) * 2001-09-10 2004-01-21 Anelva Corp Surface processing apparatus
KR20040046571A (ko) * 2002-11-27 2004-06-05 주식회사 피앤아이 이온빔을 이용한 재료의 표면 처리 장치
EP2116802B1 (en) * 2003-06-27 2011-01-12 IHI Corporation Gas cooling type vacuum heat treating furnace and cooling gas direction switching device
BRPI0413567A (pt) † 2003-08-14 2006-10-17 Univ Johannesburg método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via
US7282158B2 (en) * 2004-03-26 2007-10-16 Aviza Technology Limited Method of processing a workpiece
WO2005098968A1 (ja) * 2004-04-09 2005-10-20 Honda Motor Co., Ltd. カルコパイライト型薄膜太陽電池用光吸収層の製造方法
DE102004024601A1 (de) * 2004-05-13 2005-12-01 Klaus Dr. Kalberlah Verfahren und Einrichtung zur sequentiellen Bandabscheidung von Selen auf Chalkopyrit-Dünnschicht-Solarzellen
JP2006049768A (ja) * 2004-08-09 2006-02-16 Showa Shell Sekiyu Kk Ｃｉｓ系化合物半導体薄膜太陽電池及び該太陽電池の光吸収層の製造方法
EP1643564B1 (en) * 2004-09-29 2019-01-16 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic device
DE102004048310B4 (de) † 2004-10-05 2013-09-19 Memmert GmbH + Co. KG Laborwärmeofen
WO2006047207A2 (en) * 2004-10-21 2006-05-04 University Of Delaware Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates
JP4131965B2 (ja) 2004-12-28 2008-08-13 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の作製方法
US8039051B2 (en) * 2005-06-03 2011-10-18 Csg Solar Ag Method and apparatus for hydrogenation of thin film silicon on glass
JP4878782B2 (ja) * 2005-07-05 2012-02-15 シャープ株式会社 プラズマ処理装置及びプラズマ処理方法
US20070031609A1 (en) * 2005-07-29 2007-02-08 Ajay Kumar Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
NL1030360C2 (nl) * 2005-11-07 2007-05-08 Holding Mij Wilro B V Oven en werkwijze voor de productie van fotovoltaïsche zonnecellen gebruikmakend van een diffusieproces.
US7442413B2 (en) * 2005-11-18 2008-10-28 Daystar Technologies, Inc. Methods and apparatus for treating a work piece with a vaporous element
DE102005062977B3 (de) 2005-12-28 2007-09-13 Sulfurcell Solartechnik Gmbh Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen
US20070187386A1 (en) * 2006-02-10 2007-08-16 Poongsan Microtec Corporation Methods and apparatuses for high pressure gas annealing
US20080210290A1 (en) * 2006-04-14 2008-09-04 Dau Wu Plasma inside vapor deposition apparatus and method for making multi-junction silicon thin film solar cell modules and panels
JP5246839B2 (ja) † 2006-08-24 2013-07-24 独立行政法人産業技術総合研究所 半導体薄膜の製造方法、半導体薄膜の製造装置、光電変換素子の製造方法及び光電変換素子
US7867551B2 (en) * 2006-09-21 2011-01-11 Solopower, Inc. Processing method for group IBIIIAVIA semiconductor layer growth
US9460945B2 (en) * 2006-11-06 2016-10-04 Hitachi Kokusai Electric Inc. Substrate processing apparatus for semiconductor devices
JP5244170B2 (ja) * 2008-04-17 2013-07-24 本田技研工業株式会社 太陽電池の熱処理装置

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