BRPI0413567A - método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via - Google Patents
método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-viaInfo
- Publication number
- BRPI0413567A BRPI0413567A BRPI0413567-9A BRPI0413567A BRPI0413567A BR PI0413567 A BRPI0413567 A BR PI0413567A BR PI0413567 A BRPI0413567 A BR PI0413567A BR PI0413567 A BRPI0413567 A BR PI0413567A
- Authority
- BR
- Brazil
- Prior art keywords
- group
- iiia
- alloy
- film
- preparation
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 title abstract 9
- 239000000956 alloy Substances 0.000 title abstract 9
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 2
- 229910002058 ternary alloy Inorganic materials 0.000 abstract 2
- 229910002056 binary alloy Inorganic materials 0.000 abstract 1
- 229910021476 group 6 element Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Particle Accelerators (AREA)
Abstract
"MéTODO PARA A PREPARAçãO DE PELìCULAS SEMICONDUTORAS DE LIGA QUATERNáRIA OU SUPERIOR DE GRUPO IB-IIIA-VIA". A presente invenção refere-se a um método para produzir películas semicondutoras de liga quaternária ou superior de grupo IB-IIIA-VIA em que o método compreende as etapas de (i) fornecer uma película de metal que compreende uma mistura de metais de grupo IB e grupo IIIA; (II) tratar por calor a película de metal na presença de uma fonte de um primeiro elemento de grupo VIA (o referido primeiro elemento de grupo VIA que a seguir será referido como VIA~ 1~) sob condições para formar uma primeira película que compreende uma mistura de pelo menos uma liga binária selecionada do grupo que consiste em uma liga de grupo IB -VIA~ 1~ e uma liga de grupo IIIA-VIA~ 1~ e pelo menos uma liga ternária de grupo IB-IIIA-VIA~ 1~; (III) opcionalmente tratar por calor a primeira película na presença de uma fonte de um segundo elemento de grupo VIA (o referido segundo elemento de grupo VI que a seguir será referido como VIA~ 2~) sob condições para converter a primeira película em uma segunda película compreendendo pelo menos uma liga selecionada do grupo que consiste em uma liga do grupo IB-VIA~ 1~-VIA~ 2~ e uma liga do grupo IIIA-VIA~ 1~-VIA~ 2~; e pelo menos uma liga ternária de grupo de etapa (ii); (iv) tratar por calor a primeira película ou segunda película para formar uma película semicondutora de liga quaternária ou superior de grupo IB-IIIA-VIA.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ZA200306316 | 2003-08-14 | ||
ZA200402497 | 2004-03-30 | ||
PCT/IB2004/051458 WO2005017978A2 (en) | 2003-08-14 | 2004-08-13 | Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0413567A true BRPI0413567A (pt) | 2006-10-17 |
Family
ID=34198392
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0413567-9A BRPI0413567A (pt) | 2003-08-14 | 2004-08-13 | método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via |
BRPI0413572-5A BRPI0413572A (pt) | 2003-08-14 | 2004-08-13 | pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0413572-5A BRPI0413572A (pt) | 2003-08-14 | 2004-08-13 | pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior |
Country Status (20)
Country | Link |
---|---|
US (3) | US7682939B2 (pt) |
EP (3) | EP2284905A2 (pt) |
JP (2) | JP4864705B2 (pt) |
KR (2) | KR101027318B1 (pt) |
AP (2) | AP2149A (pt) |
AT (1) | ATE510304T2 (pt) |
AU (2) | AU2004301076B2 (pt) |
BR (2) | BRPI0413567A (pt) |
CA (2) | CA2535703C (pt) |
CY (1) | CY1111940T1 (pt) |
DE (1) | DE202004021800U1 (pt) |
DK (1) | DK1654769T4 (pt) |
EA (2) | EA009012B1 (pt) |
EG (1) | EG25410A (pt) |
ES (1) | ES2366888T5 (pt) |
HK (1) | HK1097105A1 (pt) |
IL (2) | IL173694A0 (pt) |
MX (2) | MXPA06001723A (pt) |
OA (2) | OA13236A (pt) |
WO (2) | WO2005017979A2 (pt) |
Families Citing this family (56)
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US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
DE602007005092D1 (de) * | 2006-01-12 | 2010-04-15 | Heliovolt Corp | Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen |
US8617640B2 (en) * | 2006-06-12 | 2013-12-31 | Nanosolar, Inc. | Thin-film devices formed from solid group IIIA alloy particles |
DE102006055662B3 (de) * | 2006-11-23 | 2008-06-26 | Gfe Metalle Und Materialien Gmbh | Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen |
US20080302413A1 (en) * | 2007-03-30 | 2008-12-11 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
US8071179B2 (en) | 2007-06-29 | 2011-12-06 | Stion Corporation | Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials |
WO2009017172A1 (ja) * | 2007-08-02 | 2009-02-05 | Showa Shell Sekiyu K. K. | Cis系薄膜太陽電池の光吸収層の作製方法 |
US8258001B2 (en) * | 2007-10-26 | 2012-09-04 | Solopower, Inc. | Method and apparatus for forming copper indium gallium chalcogenide layers |
US8779283B2 (en) * | 2007-11-29 | 2014-07-15 | General Electric Company | Absorber layer for thin film photovoltaics and a solar cell made therefrom |
JP4620105B2 (ja) * | 2007-11-30 | 2011-01-26 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の光吸収層の製造方法 |
KR101447113B1 (ko) * | 2008-01-15 | 2014-10-07 | 삼성전자주식회사 | 화합물 반도체 수직 적층 이미지 센서 |
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DE102008024230A1 (de) * | 2008-05-19 | 2009-11-26 | Avancis Gmbh & Co. Kg | Schichtsystem für Solarzellen |
ES2581378T3 (es) † | 2008-06-20 | 2016-09-05 | Volker Probst | Dispositivo de procesamiento y procedimiento para procesar productos de procesamiento apilados |
US7947524B2 (en) * | 2008-09-30 | 2011-05-24 | Stion Corporation | Humidity control and method for thin film photovoltaic materials |
US20110018103A1 (en) * | 2008-10-02 | 2011-01-27 | Stion Corporation | System and method for transferring substrates in large scale processing of cigs and/or cis devices |
US8241943B1 (en) | 2009-05-08 | 2012-08-14 | Stion Corporation | Sodium doping method and system for shaped CIGS/CIS based thin film solar cells |
US8372684B1 (en) * | 2009-05-14 | 2013-02-12 | Stion Corporation | Method and system for selenization in fabricating CIGS/CIS solar cells |
US8507786B1 (en) | 2009-06-27 | 2013-08-13 | Stion Corporation | Manufacturing method for patterning CIGS/CIS solar cells |
US8398772B1 (en) | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
WO2011027663A1 (ja) * | 2009-09-04 | 2011-03-10 | 大陽日酸株式会社 | 太陽電池用セレン化水素混合ガスの供給方法及び供給装置 |
TW201124544A (en) * | 2009-11-24 | 2011-07-16 | Applied Quantum Technology Llc | Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same |
KR20110060139A (ko) * | 2009-11-30 | 2011-06-08 | 삼성전자주식회사 | 태양 전지 제조 방법 |
US8859880B2 (en) * | 2010-01-22 | 2014-10-14 | Stion Corporation | Method and structure for tiling industrial thin-film solar devices |
TWI411121B (zh) * | 2010-03-11 | 2013-10-01 | Ind Tech Res Inst | 光吸收層之製造方法及應用其之太陽能電池結構 |
CN102893370B (zh) * | 2010-03-17 | 2015-12-16 | 陶氏环球技术有限责任公司 | 整合连接层的光电活性的、基于硫属元素的薄膜结构 |
US8142521B2 (en) * | 2010-03-29 | 2012-03-27 | Stion Corporation | Large scale MOCVD system for thin film photovoltaic devices |
US9096930B2 (en) | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
WO2011132915A2 (ko) * | 2010-04-19 | 2011-10-27 | 한국생산기술연구원 | 태양 전지 제조 방법 |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
KR20130100907A (ko) * | 2010-04-30 | 2013-09-12 | 다우 글로벌 테크놀로지스 엘엘씨 | 칼코게나이드계 태양광발전 셀의 제조 방법 |
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KR20110128580A (ko) | 2010-05-24 | 2011-11-30 | 삼성전자주식회사 | 태양 전지 제조 방법 |
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US8461061B2 (en) | 2010-07-23 | 2013-06-11 | Stion Corporation | Quartz boat method and apparatus for thin film thermal treatment |
US9142408B2 (en) | 2010-08-16 | 2015-09-22 | Alliance For Sustainable Energy, Llc | Liquid precursor for deposition of indium selenide and method of preparing the same |
WO2012023519A1 (ja) | 2010-08-17 | 2012-02-23 | 凸版印刷株式会社 | 化合物半導体薄膜作製用インク、そのインクを用いて得た化合物半導体薄膜、その化合物半導体薄膜を備える太陽電池、およびその太陽電池の製造方法 |
JP2012079997A (ja) * | 2010-10-05 | 2012-04-19 | Kobe Steel Ltd | 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびIn−Cu合金スパッタリングターゲット |
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US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
JP2013021231A (ja) * | 2011-07-13 | 2013-01-31 | Kyocera Corp | 半導体層の製造方法および光電変換装置の製造方法 |
CN103946867A (zh) | 2011-07-13 | 2014-07-23 | 西奥尼克斯公司 | 生物计量成像装置和相关方法 |
EP2791054A4 (en) * | 2011-12-15 | 2016-03-09 | Midsummer Ab | RECYCLING OF COPPER, INDIUM AND GALLIUM DISELENIURE |
US20130344646A1 (en) * | 2011-12-21 | 2013-12-26 | Intermolecular, Inc. | Absorbers for High-Efficiency Thin-Film PV |
DE102012205378A1 (de) * | 2012-04-02 | 2013-10-02 | Robert Bosch Gmbh | Verfahren zur Herstellung von Dünnschichtsolarmodulen sowie nach diesem Verfahren erhältliche Dünnschichtsolarmodule |
ITFI20120090A1 (it) * | 2012-05-10 | 2013-11-11 | Advanced Res On Pv Tech S R L | Processo per la produzione di celle solari a film sottili |
US8586457B1 (en) * | 2012-05-17 | 2013-11-19 | Intermolecular, Inc. | Method of fabricating high efficiency CIGS solar cells |
US9105797B2 (en) | 2012-05-31 | 2015-08-11 | Alliance For Sustainable Energy, Llc | Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se |
WO2014064823A1 (ja) * | 2012-10-26 | 2014-05-01 | 株式会社日立製作所 | 半導体膜の製造方法、太陽電池及びカルコパイライト化合物 |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
US9768015B2 (en) * | 2015-06-11 | 2017-09-19 | Alliance For Sustainable Energy, Llc | Methods of forming CIGS films |
TW201941444A (zh) | 2018-02-16 | 2019-10-16 | 澳大利亞商新南創新私人有限公司 | 金剛合金半導體及其用途 |
KR102015985B1 (ko) * | 2018-04-17 | 2019-08-29 | 한국과학기술연구원 | 태양전지용 cigs 박막의 제조방법 |
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US5674555A (en) | 1995-11-30 | 1997-10-07 | University Of Delaware | Process for preparing group Ib-IIIa-VIa semiconducting films |
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JP2922466B2 (ja) | 1996-08-29 | 1999-07-26 | 時夫 中田 | 薄膜太陽電池 |
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US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
WO2001037324A1 (en) | 1999-11-16 | 2001-05-25 | Midwest Research Institute | A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2? |
US20030008493A1 (en) * | 2001-07-03 | 2003-01-09 | Shyh-Dar Lee | Interconnect structure manufacturing |
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2004
- 2004-08-13 AU AU2004301076A patent/AU2004301076B2/en not_active Ceased
- 2004-08-13 CA CA2535703A patent/CA2535703C/en active Active
- 2004-08-13 ES ES04744786.7T patent/ES2366888T5/es active Active
- 2004-08-13 DK DK04744786.7T patent/DK1654769T4/en active
- 2004-08-13 AT AT04744786T patent/ATE510304T2/de active
- 2004-08-13 DE DE202004021800U patent/DE202004021800U1/de not_active Expired - Lifetime
- 2004-08-13 WO PCT/IB2004/051459 patent/WO2005017979A2/en active Search and Examination
- 2004-08-13 BR BRPI0413567-9A patent/BRPI0413567A/pt not_active IP Right Cessation
- 2004-08-13 US US10/568,227 patent/US7682939B2/en not_active Expired - Fee Related
- 2004-08-13 CA CA2539556A patent/CA2539556C/en active Active
- 2004-08-13 AU AU2004301075A patent/AU2004301075B2/en not_active Ceased
- 2004-08-13 JP JP2006523110A patent/JP4864705B2/ja not_active Expired - Fee Related
- 2004-08-13 MX MXPA06001723A patent/MXPA06001723A/es active IP Right Grant
- 2004-08-13 KR KR1020067003123A patent/KR101027318B1/ko not_active IP Right Cessation
- 2004-08-13 JP JP2006523109A patent/JP4994032B2/ja not_active Expired - Fee Related
- 2004-08-13 EP EP10014635A patent/EP2284905A2/en not_active Withdrawn
- 2004-08-13 EA EA200600407A patent/EA009012B1/ru not_active IP Right Cessation
- 2004-08-13 AP AP2006003508A patent/AP2149A/xx active
- 2004-08-13 AP AP2006003507A patent/AP2180A/xx active
- 2004-08-13 WO PCT/IB2004/051458 patent/WO2005017978A2/en active Search and Examination
- 2004-08-13 EP EP04744786.7A patent/EP1654769B2/en active Active
- 2004-08-13 MX MXPA06001726A patent/MXPA06001726A/es active IP Right Grant
- 2004-08-13 EA EA200600406A patent/EA010171B1/ru not_active IP Right Cessation
- 2004-08-13 EP EP04744787A patent/EP1654751A2/en not_active Withdrawn
- 2004-08-13 KR KR1020067003122A patent/KR101004452B1/ko not_active IP Right Cessation
- 2004-08-13 OA OA1200600050A patent/OA13236A/en unknown
- 2004-08-13 US US10/568,229 patent/US7744705B2/en not_active Expired - Fee Related
- 2004-08-13 OA OA1200600051A patent/OA13237A/en unknown
- 2004-08-13 BR BRPI0413572-5A patent/BRPI0413572A/pt not_active IP Right Cessation
-
2006
- 2006-02-11 EG EGNA2006000140 patent/EG25410A/xx active
- 2006-02-13 IL IL173694A patent/IL173694A0/en unknown
- 2006-02-13 IL IL173693A patent/IL173693A/en not_active IP Right Cessation
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2007
- 2007-02-23 HK HK07102040.9A patent/HK1097105A1/xx not_active IP Right Cessation
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2010
- 2010-03-19 US US12/728,054 patent/US8735214B2/en not_active Expired - Fee Related
-
2011
- 2011-08-17 CY CY20111100787T patent/CY1111940T1/el unknown
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