DE602007005092D1 - Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen - Google Patents

Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen

Info

Publication number
DE602007005092D1
DE602007005092D1 DE602007005092T DE602007005092T DE602007005092D1 DE 602007005092 D1 DE602007005092 D1 DE 602007005092D1 DE 602007005092 T DE602007005092 T DE 602007005092T DE 602007005092 T DE602007005092 T DE 602007005092T DE 602007005092 D1 DE602007005092 D1 DE 602007005092D1
Authority
DE
Germany
Prior art keywords
substrate
phase domain
segregated phase
domain structures
producing controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007005092T
Other languages
English (en)
Inventor
Billy J Stanbery
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HelioVolt Corp
Original Assignee
HelioVolt Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/331,422 external-priority patent/US20070160763A1/en
Priority claimed from US11/330,905 external-priority patent/US7767904B2/en
Priority claimed from US11/331,431 external-priority patent/US8084685B2/en
Application filed by HelioVolt Corp filed Critical HelioVolt Corp
Publication of DE602007005092D1 publication Critical patent/DE602007005092D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Recrystallisation Techniques (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Semiconductor Memories (AREA)
  • Elevator Door Apparatuses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Integrated Circuits (AREA)
  • Catalysts (AREA)
DE602007005092T 2006-01-12 2007-01-12 Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen Active DE602007005092D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/331,422 US20070160763A1 (en) 2006-01-12 2006-01-12 Methods of making controlled segregated phase domain structures
US11/330,905 US7767904B2 (en) 2006-01-12 2006-01-12 Compositions including controlled segregated phase domain structures
US11/331,431 US8084685B2 (en) 2006-01-12 2006-01-12 Apparatus for making controlled segregated phase domain structures
PCT/US2007/000940 WO2007082084A2 (en) 2006-01-12 2007-01-12 Methods of making controlled segregated phase domain structures

Publications (1)

Publication Number Publication Date
DE602007005092D1 true DE602007005092D1 (de) 2010-04-15

Family

ID=38042929

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007005092T Active DE602007005092D1 (de) 2006-01-12 2007-01-12 Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen

Country Status (10)

Country Link
EP (3) EP1974392B1 (de)
KR (3) KR101245555B1 (de)
AT (2) ATE520154T1 (de)
AU (3) AU2007204811B2 (de)
BR (3) BRPI0707127A2 (de)
CA (3) CA2637111C (de)
DE (1) DE602007005092D1 (de)
ES (2) ES2373147T3 (de)
MX (3) MX2008008977A (de)
WO (3) WO2007082084A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101471394A (zh) * 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
JP2013501381A (ja) 2009-08-04 2013-01-10 プリカーサー エナジェティクス， インコーポレイテッド 制御された化学量論を有する光起電性アブソーバーのための方法
EP2462149A2 (de) 2009-08-04 2012-06-13 Precursor Energetics, Inc. Polymere vorläufer für cis- und cigs-photovoltaikelemente
WO2011017237A2 (en) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Polymeric precursors for caigs and aigs silver-containing photovoltaics
US8158033B2 (en) 2009-08-04 2012-04-17 Precursor Energetics, Inc. Polymeric precursors for CAIGAS aluminum-containing photovoltaics
WO2011084171A1 (en) 2009-12-17 2011-07-14 Precursor Energetics, Inc. Molecular precursors for optoelectronics
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
JP2013539912A (ja) 2010-09-15 2013-10-28 プリカーサー エナジェティクス， インコーポレイテッド 光起電のための堆積過程およびデバイス
TWI435463B (zh) * 2011-07-26 2014-04-21 Au Optronics Corp 形成光電轉換層之方法
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
JP3244408B2 (ja) * 1995-09-13 2002-01-07 松下電器産業株式会社 薄膜太陽電池及びその製造方法
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
EP1119068B1 (de) 1999-06-30 2012-11-28 JGC Catalysts and Chemicals Ltd. Photoelektrische zelle
US6313479B1 (en) 1999-09-14 2001-11-06 Zhenyu Zhang Self-organized formation of quantum dots of a material on a substrate
JP2002329877A (ja) * 2001-04-27 2002-11-15 National Institute Of Advanced Industrial & Technology Ｃｕ（Ｇａ及び（又は）Ｉｎ）Ｓｅ２薄膜層、Ｃｕ（ＩｎＧａ）（Ｓ、Ｓｅ）２薄膜層、太陽電池、Ｃｕ（Ｇａ及び（又は）Ｉｎ）Ｓｅ２薄膜層の形成方法
US6736986B2 (en) 2001-09-20 2004-05-18 Heliovolt Corporation Chemical synthesis of layers, coatings or films using surfactants
US6593213B2 (en) 2001-09-20 2003-07-15 Heliovolt Corporation Synthesis of layers, coatings or films using electrostatic fields
US6500733B1 (en) * 2001-09-20 2002-12-31 Heliovolt Corporation Synthesis of layers, coatings or films using precursor layer exerted pressure containment
US6559372B2 (en) 2001-09-20 2003-05-06 Heliovolt Corporation Photovoltaic devices and compositions for use therein
US6787012B2 (en) 2001-09-20 2004-09-07 Helio Volt Corp Apparatus for the synthesis of layers, coatings or films
WO2003026022A2 (en) * 2001-09-20 2003-03-27 Heliovolt Corporation Synthesis of layers, coatings or films using surfactants
US6881647B2 (en) 2001-09-20 2005-04-19 Heliovolt Corporation Synthesis of layers, coatings or films using templates
GB2391385A (en) * 2002-07-26 2004-02-04 Seiko Epson Corp Patterning method by forming indent region to control spreading of liquid material deposited onto substrate
AU2004301076B2 (en) * 2003-08-14 2009-11-05 University Of Johannesburg Group I-III-VI quaternary or higher alloy semiconductor films

Also Published As

Publication number Publication date
KR20080112200A (ko) 2008-12-24
KR101245555B1 (ko) 2013-03-19
WO2007082085A2 (en) 2007-07-19
CA2637111A1 (en) 2007-07-19
EP1974392A2 (de) 2008-10-01
WO2007082085A3 (en) 2007-09-07
EP1974397A2 (de) 2008-10-01
CA2636791A1 (en) 2007-07-19
BRPI0707128A2 (pt) 2011-04-19
BRPI0707122A2 (pt) 2011-04-19
AU2007204891A1 (en) 2007-07-19
ES2373147T3 (es) 2012-01-31
ATE459983T1 (de) 2010-03-15
KR20080112199A (ko) 2008-12-24
CA2637111C (en) 2013-02-26
CA2636790C (en) 2014-03-11
AU2007204811B2 (en) 2010-04-08
EP1974392B1 (de) 2011-08-10
WO2007082084A2 (en) 2007-07-19
KR20080112198A (ko) 2008-12-24
BRPI0707127A2 (pt) 2011-04-19
AU2007204811A1 (en) 2007-07-19
WO2007082080A1 (en) 2007-07-19
AU2007204812B2 (en) 2010-05-13
WO2007082084A3 (en) 2007-09-07
MX2008008976A (es) 2008-12-19
AU2007204891B2 (en) 2010-12-09
KR101245556B1 (ko) 2013-03-19
ATE520154T1 (de) 2011-08-15
MX2008008977A (es) 2008-12-19
EP1974397B1 (de) 2010-03-03
MX2008008975A (es) 2009-01-07
CA2636791C (en) 2013-02-26
KR101266548B1 (ko) 2013-05-23
EP1977452A1 (de) 2008-10-08
AU2007204812A1 (en) 2007-07-19
ES2342022T3 (es) 2010-06-30
CA2636790A1 (en) 2007-07-19

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