ATE459983T1 - Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen - Google Patents

Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen

Info

Publication number
ATE459983T1
ATE459983T1 AT07716583T AT07716583T ATE459983T1 AT E459983 T1 ATE459983 T1 AT E459983T1 AT 07716583 T AT07716583 T AT 07716583T AT 07716583 T AT07716583 T AT 07716583T AT E459983 T1 ATE459983 T1 AT E459983T1
Authority
AT
Austria
Prior art keywords
substrate
phase domain
segregate
domain structures
producing controlled
Prior art date
Application number
AT07716583T
Other languages
English (en)
Inventor
Billy Stanbery
Original Assignee
Heliovolt Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/330,905 external-priority patent/US7767904B2/en
Priority claimed from US11/331,422 external-priority patent/US20070160763A1/en
Priority claimed from US11/331,431 external-priority patent/US8084685B2/en
Application filed by Heliovolt Corp filed Critical Heliovolt Corp
Application granted granted Critical
Publication of ATE459983T1 publication Critical patent/ATE459983T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Optical Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Elevator Door Apparatuses (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Catalysts (AREA)
  • Semiconductor Memories (AREA)
AT07716583T 2006-01-12 2007-01-12 Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen ATE459983T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/330,905 US7767904B2 (en) 2006-01-12 2006-01-12 Compositions including controlled segregated phase domain structures
US11/331,422 US20070160763A1 (en) 2006-01-12 2006-01-12 Methods of making controlled segregated phase domain structures
US11/331,431 US8084685B2 (en) 2006-01-12 2006-01-12 Apparatus for making controlled segregated phase domain structures
PCT/US2007/000940 WO2007082084A2 (en) 2006-01-12 2007-01-12 Methods of making controlled segregated phase domain structures

Publications (1)

Publication Number Publication Date
ATE459983T1 true ATE459983T1 (de) 2010-03-15

Family

ID=38042929

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07716583T ATE459983T1 (de) 2006-01-12 2007-01-12 Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen
AT07716584T ATE520154T1 (de) 2006-01-12 2007-01-12 Vorrichtung zur herstellung gesteuerter segregierter phasendomänenstrukturen

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT07716584T ATE520154T1 (de) 2006-01-12 2007-01-12 Vorrichtung zur herstellung gesteuerter segregierter phasendomänenstrukturen

Country Status (10)

Country Link
EP (3) EP1974397B1 (de)
KR (3) KR101245556B1 (de)
AT (2) ATE459983T1 (de)
AU (3) AU2007204811B2 (de)
BR (3) BRPI0707128A2 (de)
CA (3) CA2636791C (de)
DE (1) DE602007005092D1 (de)
ES (2) ES2342022T3 (de)
MX (3) MX2008008977A (de)
WO (3) WO2007082084A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101471394A (zh) * 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
JP2013501054A (ja) 2009-08-04 2013-01-10 プリカーサー エナジェティクス， インコーポレイテッド Ｃａｉｇａｓアルミニウム含有光起電性装置用のポリマー前駆体
US8512603B2 (en) 2009-08-04 2013-08-20 Precursor Energetics, Inc. Polymeric precursors for CIS and CIGS photovoltaics
WO2011017235A2 (en) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Methods for photovoltaic absorbers with controlled stoichiometry
EP2462150A2 (de) 2009-08-04 2012-06-13 Precursor Energetics, Inc. Polymere vorläufer für silberhaltige caigs- und aigs-photovoltaikelemente
WO2011084171A1 (en) 2009-12-17 2011-07-14 Precursor Energetics, Inc. Molecular precursors for optoelectronics
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
AU2011302008A1 (en) 2010-09-15 2013-05-09 Precursor Energetics, Inc. Deposition processes and devices for photovoltaics
TWI435463B (zh) * 2011-07-26 2014-04-21 Au Optronics Corp 形成光電轉換層之方法
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
JP3244408B2 (ja) 1995-09-13 2002-01-07 松下電器産業株式会社 薄膜太陽電池及びその製造方法
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
EP1119068B1 (de) * 1999-06-30 2012-11-28 JGC Catalysts and Chemicals Ltd. Photoelektrische zelle
US6313479B1 (en) 1999-09-14 2001-11-06 Zhenyu Zhang Self-organized formation of quantum dots of a material on a substrate
JP2002329877A (ja) * 2001-04-27 2002-11-15 National Institute Of Advanced Industrial & Technology Ｃｕ（Ｇａ及び（又は）Ｉｎ）Ｓｅ２薄膜層、Ｃｕ（ＩｎＧａ）（Ｓ、Ｓｅ）２薄膜層、太陽電池、Ｃｕ（Ｇａ及び（又は）Ｉｎ）Ｓｅ２薄膜層の形成方法
US6559372B2 (en) 2001-09-20 2003-05-06 Heliovolt Corporation Photovoltaic devices and compositions for use therein
US6787012B2 (en) 2001-09-20 2004-09-07 Helio Volt Corp Apparatus for the synthesis of layers, coatings or films
US6500733B1 (en) 2001-09-20 2002-12-31 Heliovolt Corporation Synthesis of layers, coatings or films using precursor layer exerted pressure containment
US6593213B2 (en) 2001-09-20 2003-07-15 Heliovolt Corporation Synthesis of layers, coatings or films using electrostatic fields
EP1476906A2 (de) 2001-09-20 2004-11-17 Heliovolt Corporation Vorrichtung zur synthese von schichten, beschichtungen oder filmen
US6736986B2 (en) 2001-09-20 2004-05-18 Heliovolt Corporation Chemical synthesis of layers, coatings or films using surfactants
US6881647B2 (en) 2001-09-20 2005-04-19 Heliovolt Corporation Synthesis of layers, coatings or films using templates
GB2391385A (en) * 2002-07-26 2004-02-04 Seiko Epson Corp Patterning method by forming indent region to control spreading of liquid material deposited onto substrate
DK1654769T4 (en) * 2003-08-14 2018-05-22 Univ Johannesburg PROCEDURE FOR MANUFACTURING QUATERNARY OR HIGHER ALloy semiconductor films from groups IB-IIIA-VIA

Also Published As

Publication number Publication date
BRPI0707127A2 (pt) 2011-04-19
AU2007204891A1 (en) 2007-07-19
ES2373147T3 (es) 2012-01-31
EP1974397A2 (de) 2008-10-01
WO2007082080A1 (en) 2007-07-19
AU2007204812A1 (en) 2007-07-19
KR101245556B1 (ko) 2013-03-19
CA2636791C (en) 2013-02-26
KR20080112198A (ko) 2008-12-24
WO2007082085A2 (en) 2007-07-19
WO2007082084A3 (en) 2007-09-07
ATE520154T1 (de) 2011-08-15
CA2637111A1 (en) 2007-07-19
EP1974392A2 (de) 2008-10-01
KR20080112200A (ko) 2008-12-24
BRPI0707128A2 (pt) 2011-04-19
AU2007204811A1 (en) 2007-07-19
MX2008008975A (es) 2009-01-07
EP1974397B1 (de) 2010-03-03
CA2636790A1 (en) 2007-07-19
EP1974392B1 (de) 2011-08-10
CA2636790C (en) 2014-03-11
CA2636791A1 (en) 2007-07-19
KR101245555B1 (ko) 2013-03-19
MX2008008976A (es) 2008-12-19
CA2637111C (en) 2013-02-26
AU2007204812B2 (en) 2010-05-13
WO2007082085A3 (en) 2007-09-07
AU2007204811B2 (en) 2010-04-08
BRPI0707122A2 (pt) 2011-04-19
KR20080112199A (ko) 2008-12-24
ES2342022T3 (es) 2010-06-30
EP1977452A1 (de) 2008-10-08
WO2007082084A2 (en) 2007-07-19
AU2007204891B2 (en) 2010-12-09
DE602007005092D1 (de) 2010-04-15
MX2008008977A (es) 2008-12-19
KR101266548B1 (ko) 2013-05-23

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