AP2149A - Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films. - Google Patents

Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.

Info

Publication number
AP2149A
AP2149A AP2006003508A AP2006003508A AP2149A AP 2149 A AP2149 A AP 2149A AP 2006003508 A AP2006003508 A AP 2006003508A AP 2006003508 A AP2006003508 A AP 2006003508A AP 2149 A AP2149 A AP 2149A
Authority
AP
ARIPO
Prior art keywords
iiia
preparation
group
semiconductor films
alloy semiconductor
Prior art date
Application number
AP2006003508A
Other languages
English (en)
Other versions
AP2006003508A0 (en
Inventor
Vivian Alberts
Original Assignee
Univ Johannesburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AP2149(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Univ Johannesburg filed Critical Univ Johannesburg
Publication of AP2006003508A0 publication Critical patent/AP2006003508A0/xx
Application granted granted Critical
Publication of AP2149A publication Critical patent/AP2149A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
AP2006003508A 2003-08-14 2004-08-13 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films. AP2149A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200306316 2003-08-14
ZA200402497 2004-03-30
PCT/IB2004/051458 WO2005017978A2 (en) 2003-08-14 2004-08-13 Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films

Publications (2)

Publication Number Publication Date
AP2006003508A0 AP2006003508A0 (en) 2006-02-28
AP2149A true AP2149A (en) 2010-09-01

Family

ID=34198392

Family Applications (2)

Application Number Title Priority Date Filing Date
AP2006003507A AP2180A (en) 2003-08-14 2004-08-13 Group I-III-VI quaternary or higher alloy semiconductor films.
AP2006003508A AP2149A (en) 2003-08-14 2004-08-13 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AP2006003507A AP2180A (en) 2003-08-14 2004-08-13 Group I-III-VI quaternary or higher alloy semiconductor films.

Country Status (20)

Country Link
US (3) US7744705B2 (xx)
EP (3) EP1654769B2 (xx)
JP (2) JP4994032B2 (xx)
KR (2) KR101004452B1 (xx)
AP (2) AP2180A (xx)
AT (1) ATE510304T2 (xx)
AU (2) AU2004301075B2 (xx)
BR (2) BRPI0413572A (xx)
CA (2) CA2539556C (xx)
CY (1) CY1111940T1 (xx)
DE (1) DE202004021800U1 (xx)
DK (1) DK1654769T4 (xx)
EA (2) EA009012B1 (xx)
EG (1) EG25410A (xx)
ES (1) ES2366888T5 (xx)
HK (1) HK1097105A1 (xx)
IL (2) IL173693A (xx)
MX (2) MXPA06001726A (xx)
OA (2) OA13236A (xx)
WO (2) WO2005017978A2 (xx)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
EP1974392B1 (en) * 2006-01-12 2011-08-10 Heliovolt Corporation Apparatus for making controlled segregated phase domain structures
US8071419B2 (en) * 2006-06-12 2011-12-06 Nanosolar, Inc. Thin-film devices formed from solid particles
DE102006055662B3 (de) * 2006-11-23 2008-06-26 Gfe Metalle Und Materialien Gmbh Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen
US20080302413A1 (en) * 2007-03-30 2008-12-11 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
WO2009017172A1 (ja) * 2007-08-02 2009-02-05 Showa Shell Sekiyu K. K. Ｃｉｓ系薄膜太陽電池の光吸収層の作製方法
US8258001B2 (en) * 2007-10-26 2012-09-04 Solopower, Inc. Method and apparatus for forming copper indium gallium chalcogenide layers
US8779283B2 (en) * 2007-11-29 2014-07-15 General Electric Company Absorber layer for thin film photovoltaics and a solar cell made therefrom
JP4620105B2 (ja) * 2007-11-30 2011-01-26 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の製造方法
KR101447113B1 (ko) * 2008-01-15 2014-10-07 삼성전자주식회사 화합물 반도체 수직 적층 이미지 센서
US20090215224A1 (en) * 2008-02-21 2009-08-27 Film Solar Tech Inc. Coating methods and apparatus for making a cigs solar cell
DE102008024230A1 (de) * 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
EP2144026B1 (de) † 2008-06-20 2016-04-13 Volker Probst Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern
US7947524B2 (en) * 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US20110018103A1 (en) * 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8241943B1 (en) 2009-05-08 2012-08-14 Stion Corporation Sodium doping method and system for shaped CIGS/CIS based thin film solar cells
US8372684B1 (en) * 2009-05-14 2013-02-12 Stion Corporation Method and system for selenization in fabricating CIGS/CIS solar cells
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
KR101635122B1 (ko) * 2009-09-04 2016-06-30 타이요 닛폰 산소 가부시키가이샤 태양 전지용 셀렌화 수소 혼합 가스의 공급 방법 및 공급 장치
TW201124544A (en) * 2009-11-24 2011-07-16 Applied Quantum Technology Llc Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
KR20110060139A (ko) * 2009-11-30 2011-06-08 삼성전자주식회사 태양 전지 제조 방법
US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
TWI411121B (zh) * 2010-03-11 2013-10-01 Ind Tech Res Inst 光吸收層之製造方法及應用其之太陽能電池結構
CN102893370B (zh) * 2010-03-17 2015-12-16 陶氏环球技术有限责任公司 整合连接层的光电活性的、基于硫属元素的薄膜结构
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US8142521B2 (en) * 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
JP2013529378A (ja) * 2010-04-19 2013-07-18 韓国生産技術研究院 太陽電池の製造方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2564434B1 (en) * 2010-04-30 2016-01-13 Dow Global Technologies LLC Method of manufacture of chalcogenide-based photovoltaic cells
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
KR20110128580A (ko) 2010-05-24 2011-11-30 삼성전자주식회사 태양 전지 제조 방법
CN106449684B (zh) 2010-06-18 2019-09-27 西奥尼克斯公司 高速光敏设备及相关方法
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
WO2012023519A1 (ja) 2010-08-17 2012-02-23 凸版印刷株式会社 化合物半導体薄膜作製用インク、そのインクを用いて得た化合物半導体薄膜、その化合物半導体薄膜を備える太陽電池、およびその太陽電池の製造方法
JP2012079997A (ja) * 2010-10-05 2012-04-19 Kobe Steel Ltd 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびＩｎ−Ｃｕ合金スパッタリングターゲット
US20130240948A1 (en) * 2010-11-22 2013-09-19 Kyocera Corporation Photoelectric conversion device
JP2012160514A (ja) * 2011-01-31 2012-08-23 Kyocera Corp 金属カルコゲナイド層の製造方法および光電変換装置の製造方法
EA020377B1 (ru) * 2011-05-12 2014-10-30 Общество С Ограниченной Ответственностью "Изовак" Способ формирования тонких пленок cigs для солнечных батарей и устройство для его реализации
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2013021231A (ja) * 2011-07-13 2013-01-31 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
JP2015508375A (ja) * 2011-12-15 2015-03-19 ミッドサマー・アーベー 銅インジウムガリウムジセレニドのリサイクル
US20130344646A1 (en) * 2011-12-21 2013-12-26 Intermolecular, Inc. Absorbers for High-Efficiency Thin-Film PV
DE102012205378A1 (de) * 2012-04-02 2013-10-02 Robert Bosch Gmbh Verfahren zur Herstellung von Dünnschichtsolarmodulen sowie nach diesem Verfahren erhältliche Dünnschichtsolarmodule
ITFI20120090A1 (it) * 2012-05-10 2013-11-11 Advanced Res On Pv Tech S R L Processo per la produzione di celle solari a film sottili
US8586457B1 (en) * 2012-05-17 2013-11-19 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
WO2014064823A1 (ja) * 2012-10-26 2014-05-01 株式会社日立製作所 半導体膜の製造方法、太陽電池及びカルコパイライト化合物
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US9768015B2 (en) * 2015-06-11 2017-09-19 Alliance For Sustainable Energy, Llc Methods of forming CIGS films
US11881536B2 (en) 2018-02-16 2024-01-23 Newsouth Innovations Pty Limited Adamantine semiconductor and uses thereof
KR102015985B1 (ko) * 2018-04-17 2019-08-29 한국과학기술연구원 태양전지용 cigs 박막의 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555615A (ja) * 1991-08-28 1993-03-05 Fuji Electric Co Ltd 薄膜太陽電池の製造方法
US5436204A (en) 1993-04-12 1995-07-25 Midwest Research Institute Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
US5356839A (en) 1993-04-12 1994-10-18 Midwest Research Institute Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization
US5674555A (en) 1995-11-30 1997-10-07 University Of Delaware Process for preparing group Ib-IIIa-VIa semiconducting films
JPH1012635A (ja) * 1996-04-26 1998-01-16 Yazaki Corp Ｉ−ｉｉｉ−ｖｉ２系薄膜層の形成方法及びその形成装置
JP2922466B2 (ja) 1996-08-29 1999-07-26 時夫 中田 薄膜太陽電池
US5985691A (en) 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
JP4177480B2 (ja) 1998-05-15 2008-11-05 インターナショナル ソーラー エレクトリック テクノロジー，インコーポレイテッド 化合物半導体フィルムおよび関連電子装置の製造方法
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
WO2001037324A1 (en) 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
US20030008493A1 (en) * 2001-07-03 2003-01-09 Shyh-Dar Lee Interconnect structure manufacturing

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Kushiya K. et al. *
Nagoya Y. et al. *

Also Published As

Publication number Publication date
WO2005017979A3 (en) 2006-06-01
KR20060058717A (ko) 2006-05-30
DK1654769T3 (da) 2011-09-12
BRPI0413567A (pt) 2006-10-17
KR20060082075A (ko) 2006-07-14
WO2005017978A2 (en) 2005-02-24
EP2284905A2 (en) 2011-02-16
MXPA06001726A (es) 2007-05-04
EP1654769B2 (en) 2018-02-07
EG25410A (en) 2012-01-02
EP1654751A2 (en) 2006-05-10
JP4994032B2 (ja) 2012-08-08
OA13236A (en) 2006-12-13
CA2539556A1 (en) 2005-02-24
EA009012B1 (ru) 2007-10-26
EP1654769A2 (en) 2006-05-10
IL173694A0 (en) 2006-07-05
US7682939B2 (en) 2010-03-23
WO2005017979A2 (en) 2005-02-24
JP2007502247A (ja) 2007-02-08
HK1097105A1 (en) 2007-06-15
AP2006003508A0 (en) 2006-02-28
AU2004301076A1 (en) 2005-02-24
CA2539556C (en) 2010-10-26
US20060222558A1 (en) 2006-10-05
DE202004021800U1 (de) 2011-04-21
CA2535703C (en) 2011-04-19
JP4864705B2 (ja) 2012-02-01
US20070004078A1 (en) 2007-01-04
DK1654769T4 (en) 2018-05-22
EA200600407A1 (ru) 2006-08-25
ATE510304T2 (de) 2011-06-15
ES2366888T5 (es) 2018-05-17
AU2004301076B2 (en) 2009-11-05
EA200600406A1 (ru) 2006-08-25
KR101027318B1 (ko) 2011-04-06
US20100190292A1 (en) 2010-07-29
US8735214B2 (en) 2014-05-27
MXPA06001723A (es) 2007-04-25
IL173693A0 (en) 2006-07-05
AP2180A (en) 2010-11-29
AU2004301075A1 (en) 2005-02-24
WO2005017978A3 (en) 2005-10-13
OA13237A (en) 2006-12-13
US7744705B2 (en) 2010-06-29
AU2004301075B2 (en) 2009-10-08
JP2007503708A (ja) 2007-02-22
EA010171B1 (ru) 2008-06-30
CA2535703A1 (en) 2005-02-24
EP1654769B1 (en) 2011-05-18
AP2006003507A0 (en) 2006-02-28
ES2366888T3 (es) 2011-10-26
IL173693A (en) 2014-01-30
BRPI0413572A (pt) 2006-10-17
CY1111940T1 (el) 2015-11-04
KR101004452B1 (ko) 2010-12-28

Similar Documents

Publication Publication Date Title
AP2149A (en) Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.
TWI372421B (en) Wafer processing method
HK1091453A1 (en) Method for the preparation of beverages
SG135040A1 (en) Method for processing wafer
GB2415202B (en) An Al-Zn-Mg-Cu alloy
SG109568A1 (en) Wafer processing method
GB0711539D0 (en) Method for synthesizing semiconductor quantom dots
SG110134A1 (en) Wafer processing method
EP1814150A4 (en) COATING LIQUID FOR FORMING A PROTECTIVE FILM FOR SEMICONDUCTOR PROCESSING, METHOD FOR THE PRODUCTION THEREOF AND THEREFORE PROTECTED FILM FOR SEMICONDUCTOR PROCESSING
AU2003219359A8 (en) Imaging method
EP1662555A4 (en) PROCESS FOR PRODUCING SOI PLATEBOARD
AU2003301120A1 (en) Method for passivating semiconductor devices
AU2003246862A8 (en) Assembly for hydrosylilation, method for preparing same and silicone compositions incorporating same
EP1465242A4 (en) SEMICONDUCTOR WAFERS AND METHOD FOR THE PRODUCTION THEREOF
EP1610394A4 (en) SEMICONDUCTOR COMPONENT, PROCESS FOR ITS MANUFACTURE AND PROCESS FOR PRODUCING A COMPOSITE METAL THIN FILM
GB2421804B (en) Compositions, systems, and methods for imaging
GB2419466B (en) Compound semiconductor and method for producing same
SG135019A1 (en) Semiconductor wafer processing method
EP1556400A4 (en) PROCESS FOR THE PREPARATION OF 2-HALOGEN-2-DESOXYADENOSINE COMPOUNDS FROM 2-DESOXYGUANOSINE
EP1646640A4 (en) PROCESS FOR PREPARING HIGH-PURITY 1-ANDROSTEN DERIVATIVES
EP1548801A4 (en) METHOD OF MANUFACTURING A SEMICONDUCTOR WAFER
AU2003256102A1 (en) Method for the selective preparation of 3-oxo-4-aza-5a-androstane compound
SG120140A1 (en) Tungsten-copper interconnect and method for fabricating the same
AU2003251536A1 (en) Method for forming semiconductor processing components
EP1662550A4 (en) METHOD FOR PRODUCING AN SOI WATER