AP2149A - Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films. - Google Patents

Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.

Info

Publication number
AP2149A
AP2149A AP2006003508A AP2006003508A AP2149A AP 2149 A AP2149 A AP 2149A AP 2006003508 A AP2006003508 A AP 2006003508A AP 2006003508 A AP2006003508 A AP 2006003508A AP 2149 A AP2149 A AP 2149A
Authority
AP
ARIPO
Prior art keywords
iiia
preparation
group
semiconductor films
alloy semiconductor
Prior art date
Application number
AP2006003508A
Other languages
English (en)
Other versions
AP2006003508A0 (en
Inventor
Vivian Alberts
Original Assignee
Univ Johannesburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AP2149(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Univ Johannesburg filed Critical Univ Johannesburg
Publication of AP2006003508A0 publication Critical patent/AP2006003508A0/xx
Application granted granted Critical
Publication of AP2149A publication Critical patent/AP2149A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Particle Accelerators (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AP2006003508A 2003-08-14 2004-08-13 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films. AP2149A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200306316 2003-08-14
ZA200402497 2004-03-30
PCT/IB2004/051458 WO2005017978A2 (en) 2003-08-14 2004-08-13 Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films

Publications (2)

Publication Number Publication Date
AP2006003508A0 AP2006003508A0 (en) 2006-02-28
AP2149A true AP2149A (en) 2010-09-01

Family

ID=34198392

Family Applications (2)

Application Number Title Priority Date Filing Date
AP2006003507A AP2180A (en) 2003-08-14 2004-08-13 Group I-III-VI quaternary or higher alloy semiconductor films.
AP2006003508A AP2149A (en) 2003-08-14 2004-08-13 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AP2006003507A AP2180A (en) 2003-08-14 2004-08-13 Group I-III-VI quaternary or higher alloy semiconductor films.

Country Status (19)

Country Link
US (3) US7682939B2 (xx)
EP (3) EP1654751A2 (xx)
JP (2) JP4864705B2 (xx)
KR (2) KR101004452B1 (xx)
AP (2) AP2180A (xx)
AT (1) ATE510304T2 (xx)
AU (2) AU2004301075B2 (xx)
BR (2) BRPI0413572A (xx)
CA (2) CA2539556C (xx)
CY (1) CY1111940T1 (xx)
DE (1) DE202004021800U1 (xx)
DK (1) DK1654769T4 (xx)
EA (2) EA009012B1 (xx)
EG (1) EG25410A (xx)
ES (1) ES2366888T5 (xx)
IL (2) IL173693A (xx)
MX (2) MXPA06001723A (xx)
OA (2) OA13237A (xx)
WO (2) WO2005017978A2 (xx)

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US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
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US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US8142521B2 (en) * 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
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JP2013021231A (ja) * 2011-07-13 2013-01-31 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
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Also Published As

Publication number Publication date
AU2004301075A1 (en) 2005-02-24
MXPA06001723A (es) 2007-04-25
DK1654769T3 (da) 2011-09-12
AP2180A (en) 2010-11-29
EP1654769A2 (en) 2006-05-10
BRPI0413572A (pt) 2006-10-17
EA009012B1 (ru) 2007-10-26
AU2004301076A1 (en) 2005-02-24
EG25410A (en) 2012-01-02
CA2535703A1 (en) 2005-02-24
KR101004452B1 (ko) 2010-12-28
HK1097105A1 (zh) 2007-06-15
BRPI0413567A (pt) 2006-10-17
AU2004301075B2 (en) 2009-10-08
EA200600407A1 (ru) 2006-08-25
KR20060058717A (ko) 2006-05-30
WO2005017979A2 (en) 2005-02-24
IL173693A0 (en) 2006-07-05
WO2005017979A3 (en) 2006-06-01
CA2539556A1 (en) 2005-02-24
OA13236A (en) 2006-12-13
JP4994032B2 (ja) 2012-08-08
CY1111940T1 (el) 2015-11-04
US20100190292A1 (en) 2010-07-29
DK1654769T4 (en) 2018-05-22
EA200600406A1 (ru) 2006-08-25
JP4864705B2 (ja) 2012-02-01
IL173693A (en) 2014-01-30
US8735214B2 (en) 2014-05-27
CA2539556C (en) 2010-10-26
WO2005017978A2 (en) 2005-02-24
EP1654751A2 (en) 2006-05-10
AU2004301076B2 (en) 2009-11-05
WO2005017978A3 (en) 2005-10-13
EP1654769B2 (en) 2018-02-07
ATE510304T2 (de) 2011-06-15
US20070004078A1 (en) 2007-01-04
US7682939B2 (en) 2010-03-23
JP2007503708A (ja) 2007-02-22
KR20060082075A (ko) 2006-07-14
MXPA06001726A (es) 2007-05-04
KR101027318B1 (ko) 2011-04-06
IL173694A0 (en) 2006-07-05
AP2006003507A0 (en) 2006-02-28
AP2006003508A0 (en) 2006-02-28
ES2366888T3 (es) 2011-10-26
EP1654769B1 (en) 2011-05-18
EA010171B1 (ru) 2008-06-30
JP2007502247A (ja) 2007-02-08
US7744705B2 (en) 2010-06-29
DE202004021800U1 (de) 2011-05-26
EP2284905A2 (en) 2011-02-16
OA13237A (en) 2006-12-13
US20060222558A1 (en) 2006-10-05
ES2366888T5 (es) 2018-05-17
CA2535703C (en) 2011-04-19

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