BRPI0413572A - pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior - Google Patents

pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior

Info

Publication number
BRPI0413572A
BRPI0413572A BRPI0413572-5A BRPI0413572A BRPI0413572A BR PI0413572 A BRPI0413572 A BR PI0413572A BR PI0413572 A BRPI0413572 A BR PI0413572A BR PI0413572 A BRPI0413572 A BR PI0413572A
Authority
BR
Brazil
Prior art keywords
group
iii
quaternary
semiconductor films
sym
Prior art date
Application number
BRPI0413572-5A
Other languages
English (en)
Inventor
Vivian Alberts
Original Assignee
Univ Johannesburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BRPI0413572(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Univ Johannesburg filed Critical Univ Johannesburg
Publication of BRPI0413572A publication Critical patent/BRPI0413572A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

"PELìCULAS SEMICONDUTORAS DE LIGA QUATERNáRIA DO GRUPO I - III - VI OU SUPERIOR". A presente invenção refere-se a ligas quaternárias ou superiores dos grupos IB, IIIA e VIA. Mais particularmente, esta invenção se relaciona com o grupo de ligas quaternárias ou de cinco elementos dos grupos IB, IIIA e VIA, que são adequadas para uso como filmes semicondutores. Mais especificamente, a invenção se refere a ligas quaternárias ou de cinco elementos, que são substancialmente homogêneas e são caracterizadas por um difratograma de raios X (XRD) tendo um pico principal (112) a um ângulo de 2-<sym> (2-<sym> (112)) de 26 a 28<198>, para radiação de Cu a 40 kV, em que um difratograma de raios X de incidência oblíqua (GIXRD) para um ângulo oblíquo de 0,2 a 10<198> reflete um deslocamento absoluto no ângulo 2-<sym>~ (112)~ inferior a 0,06<198>.
BRPI0413572-5A 2003-08-14 2004-08-13 pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior BRPI0413572A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200306316 2003-08-14
ZA200402497 2004-03-30
PCT/IB2004/051459 WO2005017979A2 (en) 2003-08-14 2004-08-13 Group i-iii-vi quaternary or higher alloy semiconductor films

Publications (1)

Publication Number Publication Date
BRPI0413572A true BRPI0413572A (pt) 2006-10-17

Family

ID=34198392

Family Applications (2)

Application Number Title Priority Date Filing Date
BRPI0413572-5A BRPI0413572A (pt) 2003-08-14 2004-08-13 pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior
BRPI0413567-9A BRPI0413567A (pt) 2003-08-14 2004-08-13 método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via

Family Applications After (1)

Application Number Title Priority Date Filing Date
BRPI0413567-9A BRPI0413567A (pt) 2003-08-14 2004-08-13 método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via

Country Status (20)

Country Link
US (3) US7744705B2 (pt)
EP (3) EP1654769B2 (pt)
JP (2) JP4994032B2 (pt)
KR (2) KR101004452B1 (pt)
AP (2) AP2180A (pt)
AT (1) ATE510304T2 (pt)
AU (2) AU2004301075B2 (pt)
BR (2) BRPI0413572A (pt)
CA (2) CA2539556C (pt)
CY (1) CY1111940T1 (pt)
DE (1) DE202004021800U1 (pt)
DK (1) DK1654769T4 (pt)
EA (2) EA009012B1 (pt)
EG (1) EG25410A (pt)
ES (1) ES2366888T5 (pt)
HK (1) HK1097105A1 (pt)
IL (2) IL173693A (pt)
MX (2) MXPA06001726A (pt)
OA (2) OA13236A (pt)
WO (2) WO2005017978A2 (pt)

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Also Published As

Publication number Publication date
WO2005017979A3 (en) 2006-06-01
KR20060058717A (ko) 2006-05-30
DK1654769T3 (da) 2011-09-12
BRPI0413567A (pt) 2006-10-17
KR20060082075A (ko) 2006-07-14
WO2005017978A2 (en) 2005-02-24
EP2284905A2 (en) 2011-02-16
MXPA06001726A (es) 2007-05-04
EP1654769B2 (en) 2018-02-07
EG25410A (en) 2012-01-02
EP1654751A2 (en) 2006-05-10
JP4994032B2 (ja) 2012-08-08
OA13236A (en) 2006-12-13
CA2539556A1 (en) 2005-02-24
EA009012B1 (ru) 2007-10-26
EP1654769A2 (en) 2006-05-10
IL173694A0 (en) 2006-07-05
US7682939B2 (en) 2010-03-23
WO2005017979A2 (en) 2005-02-24
JP2007502247A (ja) 2007-02-08
HK1097105A1 (en) 2007-06-15
AP2006003508A0 (en) 2006-02-28
AU2004301076A1 (en) 2005-02-24
CA2539556C (en) 2010-10-26
US20060222558A1 (en) 2006-10-05
DE202004021800U1 (de) 2011-04-21
CA2535703C (en) 2011-04-19
JP4864705B2 (ja) 2012-02-01
US20070004078A1 (en) 2007-01-04
DK1654769T4 (en) 2018-05-22
EA200600407A1 (ru) 2006-08-25
ATE510304T2 (de) 2011-06-15
ES2366888T5 (es) 2018-05-17
AU2004301076B2 (en) 2009-11-05
EA200600406A1 (ru) 2006-08-25
KR101027318B1 (ko) 2011-04-06
AP2149A (en) 2010-09-01
US20100190292A1 (en) 2010-07-29
US8735214B2 (en) 2014-05-27
MXPA06001723A (es) 2007-04-25
IL173693A0 (en) 2006-07-05
AP2180A (en) 2010-11-29
AU2004301075A1 (en) 2005-02-24
WO2005017978A3 (en) 2005-10-13
OA13237A (en) 2006-12-13
US7744705B2 (en) 2010-06-29
AU2004301075B2 (en) 2009-10-08
JP2007503708A (ja) 2007-02-22
EA010171B1 (ru) 2008-06-30
CA2535703A1 (en) 2005-02-24
EP1654769B1 (en) 2011-05-18
AP2006003507A0 (en) 2006-02-28
ES2366888T3 (es) 2011-10-26
IL173693A (en) 2014-01-30
CY1111940T1 (el) 2015-11-04
KR101004452B1 (ko) 2010-12-28

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Legal Events

Date Code Title Description
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]