US20110018103A1 - System and method for transferring substrates in large scale processing of cigs and/or cis devices - Google Patents

System and method for transferring substrates in large scale processing of cigs and/or cis devices Download PDF

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US20110018103A1
US20110018103A1 US12/568,654 US56865409A US2011018103A1 US 20110018103 A1 US20110018103 A1 US 20110018103A1 US 56865409 A US56865409 A US 56865409A US 2011018103 A1 US2011018103 A1 US 2011018103A1
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substrates
furnace
temperature
copper
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Robert D. Wieting
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CM Manufacturing Inc
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CM Manufacturing Inc
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
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    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
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    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3628Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a sulfide
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    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3631Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a selenide or telluride
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    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
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    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C03C17/3678Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/024Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025Metallic sublayers
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5846Reactive treatment
    • C23C14/5866Treatment with sulfur, selenium or tellurium
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
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    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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    • H01L31/1876Particular processes or apparatus for batch treatment of the devices
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/90Other aspects of coatings
    • C03C2217/94Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/944Layers comprising zinc oxide
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

According to an embodiment, the present invention provide method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the substrate including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening. The method further includes introducing a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

Description

    CROSS-REFERENCES TO RELATED APPLICATIONS
  • This application claims priority to U.S. Provisional Patent Application No. 61/102,350, filed Oct. 2, 2008, entitled “SYSTEM AND METHOD FOR TRANSFERRING SUBSTRATES IN LARGE SCALE PROCESSING OF CIGS AND/OR CIS DEVICES” by inventor Robert D. Wieting, commonly assigned and incorporated by reference herein for all purposes.
  • STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT
  • NOT APPLICABLE
  • REFERENCE TO A “SEQUENCE LISTING,” A TABLE, OR A COMPUTER PROGRAM LISTING APPENDIX SUBMITTED ON A COMPACT DISK
  • NOT APPLICABLE
  • BACKGROUND OF THE INVENTION
  • The present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for a thin film photovoltaic device using a copper indium diselenide species (CIS), copper indium gallium diselenide species (CIGS), and/or others. The invention can be applied to photovoltaic modules, flexible sheets, building or window glass, automotive, and others.
  • In the process of manufacturing CIS and/or CIGS types of thin films, there are various manufacturing challenges, such as maintaining structure integrity of substrate materials, ensuring uniformity and granularity of the thin film material, etc. Some of the difficulties in manufacturing are associated with transferring substrates to processing chambers, as substrates for CIS and/or CIGS devices are relatively heavy (e.g., 10 pounds per substrate). While conventional techniques in the past have addressed some of these issues, they are often inadequate in various situations. Therefore, it is desirable to have improved systems and method for manufacturing thin film photovoltaic devices.
  • BRIEF SUMMARY OF THE INVENTION
  • The present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for a thin film photovoltaic device using a copper indium diselenide species (CIS), copper indium gallium diselenide species (CIGS), and/or others. The invention can be applied to photovoltaic modules, flexible sheets, building or window glass, automotive, and others.
  • According to an embodiment, the present invention provide method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the substrate including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening. The method further includes introducing a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. Also, the method includes maintaining the temperature at about the second temperature for a period of time. The method additionally includes removing at least the selenide species from the furnace. The method also includes introducing a hydrogen sulfide species into the furnace. The method also includes increasing a temperature to a third temperature, the third temperature ranging from about 500 to 525° C. while the plurality of substrates are maintained in an environment including a sulfur species to extract out one or more selenium species from the copper indium diselenide film.
  • According to another embodiment, the present invention provides a partially processed semiconductor device. The device includes a substrate member characterized by a first thickness and a first surface area, the substrate member being characterized by a substantially rectangular shape, the substrate member including a peripheral region, the peripheral region being smaller 15% of the first surface area, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The device also includes a first contact layer overlaying the substrate member, the second contact layer being characterized by a second thickness and a first conductivity. The device further includes a semiconductor layer overlaying the first contact layer, the semiconductor comprises copper and indium material.
  • It is to be appreciated that the present invention provides numerous benefits over conventional techniques. Among other things, the systems and processes of the present invention are compatible with conventional systems, which allows cost effective implementation. In various embodiments, hanging device is provided within processing chamber to allow easy transfer and to ensure structure integrity of the CIS and/or CIGS devices. For example, the substrates are specific designed to be compatible with the hanging debice. There are other benefits as well.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a simplified diagram of a transparent substrate with an overlying electrode layer according to an embodiment of the present invention;
  • FIGS. 2, 2A, 2B and 2C are simplified diagrams of composite structures including a copper and indium film according to embodiments of the present invention;
  • FIGS. 3, 3A and 3B are simplified diagrams of furnaces according to embodiments of the present invention;
  • FIG. 4 is a simplified diagram of a process for forming a copper indium diselenide layer according to an embodiment of the present invention;
  • FIGS. 5 and 5A are simplified diagrams of a temperature profile of the furnace according to an embodiment of the present invention; and
  • FIGS. 6A and 6B are simplified diagram of a thin film copper indium diselenide device according to an embodiment of the present invention.
  • DETAILED DESCRIPTION OF THE INVENTION
  • The present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for a thin film photovoltaic device using a copper indium diselenide species (CIS), copper indium gallium diselenide species (CIGS), and/or others. The invention can be applied to photovoltaic modules, flexible sheets, building or window glass, automotive, and others.
  • FIG. 1 is a simplified diagram of a transparent substrate with an overlying electrode layer according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. As shown, structure 100 includes a transparent substrate 104. In an embodiment, substrate 104 can be a glass substrate, for example, a soda lime glass. However, other types of substrates can also be used. Examples of substrates include borosilicate glass, acrylic glass, sugar glass, specialty Corning™ glass, and others. As shown, a contact layer comprising a metal electrode layer 102 is deposited upon substrate 104. According to an embodiment, the metal electrode layer 102 comprises metal material that is characterized by a predetermined conductivity that is optimized for thin-film based solar cell applications. Depending on the application, the metal electrode layer 102 may be deposited in various ways. For example, the metal electrode layer 102 comprises primarily a film of molybdenum that is deposited by sputtering. For example, the thickness of may range form 100 to 600 μm. A sputtering apparatus, such as a DC magnetron sputtering apparatus, can be used to deposit a thin film of materials upon a substrate. Such apparatus is well known and commercially available. But it is to be understood that other types of equipments and/or processes, such as evaporation in vacuum based environment may be used as well. As an example, the sputtering deposition process is described below.
  • Sputter deposition is a physical vapor deposition (PVD) method of depositing thin films by sputtering, or ejecting, material from a “target”, or source, which then deposits onto a substrate, such as a silicon wafer or glass. Sputtered atoms ejected from the target have a wide energy distribution, typically up to 10's of eV's (100000 K). The entire range from high-energy ballistic impact to low-energy thermalized motion is accessible by changing the background gas pressure. The sputtering gas is often an inert gas such as argon. For efficient momentum transfer, the atomic weight of the sputtering gas should be close to the atomic weight of the target, so for sputtering light elements neon is preferable, while for heavy elements krypton or xenon are used. Reactive gases can also be used to sputter compounds. The compound can be formed on the target surface, in-flight or on the substrate depending on the process parameters. The availability of many parameters that control sputter deposition make it a complex process, but also allow experts a large degree of control over the growth and microstructure of the film.
  • FIG. 2 is a simplified diagram of a composite structure including copper and indium material according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. In this embodiment, structure 200 is includes a glass substrate 208, preferably soda lime glass, which is about 1 to 3 millimeters thick. For example, the glass substrate 208 serves as an supporting layer. The metal layer 206 is deposited upon substrate 208. For example, the metal layer 206 serves as a metal electrode layer to provide electrical contact. For example, the layer 206 comprises primarily a film of molybdenum which has been deposited by sputtering to a thickness of from 100 to 300 m. In a specific embodiment, an initial film of chromium is first deposited upon glass 208. For example, the chromium is used as a barrier layer provided to insure good adhesion of the overall structure to the substrate 208. Other types of material may also be used in a barrier layer, such as silicon dioxide, silicon nitride, et. Layers 204 and 202 include primarily a copper layer and an indium layer deposited upon metal layer 206 by a sputtering process. As shown in FIG. 2, the indium layer overlays the copper layer. But it is to be understood that other arrangements are possible. In another embodiment, the copper layer overlays the indium layer. As an example, a sputtering apparatus, such as a DC magnetron sputtering apparatus, is used to deposit the thin film (e.g., layer 202, 204, and/or 206) of materials upon a substrate. It is to be appreciated that various types of sputtering apparatus may be used. Such apparatus is well known and commercially available. Other material can also be used. It is to be appreciated that techniques described throughout the present application are flexible and that other types of equipments and/or processes, such as evaporation in vacuum based environment may be used as well for depositing copper and indium material. In certain embodiments, gallium material (not shown in FIG. 2) may be formed deposited in addition to the copper and indium material. According to an embodiment, the ratio between the copper and indium material is less than 1 (e.g., 0.92˜0.96); that is, less than one part of copper per one part of indium material.
  • As an example, the structure 200 is formed by processing the structure 100. For example, the Cu and In are deposited onto the structure 100 to form the structure 200. As described, sputtering process is used for forming the copper and/or indium layer. In the embodiment illustrated in FIG. 2, the Cu film and the In film are shown as two separate layers. In another embodiment, a Cu/In composite or Cu/In alloy is formed during the sputtering process, as shown in FIG. 2A. It is to be appreciated that techniques described throughout the present application are flexible and that other types of equipments and/or processes, such as evaporation in vacuum based environment may be used as well for depositing copper and indium material. In certain embodiments, gallium material (not shown in FIG. 2) may be formed deposited in addition to the copper and indium material.
  • FIG. 2A is a simplified diagram of a composite structure 210 including a copper and indium composite film according to another embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. As shown, the structure 210 includes a transparent substrate 216. In an embodiment, substrate 216 can be a glass substrate, for example, a soda lime glass. A back contact comprises a metal electrode layer 214 is deposited upon substrate 216. For example, the layer 214 comprises primarily a film of molybdenum material is deposited by sputtering. In a specific embodiment, an initial film of chromium is deposited upon glass 216 before depositing the chromium material to provide for good adhesion of the overall structure to the substrate 210. The layer 212 comprises primarily a copper indium alloy or copper indium composite material. For example, the mixing or alloying of copper indium results in an improved homogeneity or advantageous morphology of the composite copper and indium film. This improved structure is carried over into the desired CIS film after the selenization step. According to an embodiment, an copper indium alloy material is formed from separate layers of copper and indium material, which diffuse into each. For example, the process of forming of copper indium alloy material is facilitate by providing subjecting the structure to a high temperature.
  • As an example, in FIGS. 2 and 2A the structures includes a substrate member supporting conducting and semiconductor layers. As explained above, depending on the application, various types of material may be used to make the substrate member. For thin-film based solar cell application, glass (e.g., such as lime glass) is used to provide the substrate member. Typically, the substrate member become soft and flexible under exposure to high temperature, especially when under high temperature for extended period of time. For example, the glass substrate material would become flexible and soft when the structure is processed in a furnace when high temperature is applied to the structure to cause various reactions (such as introducing selenium to copper indium material of the semiconductor layer). When the substrate member becomes soft and flexible, it tends to deform, warp, and/or crack. For example, if the structures illustrated in FIGS. 2 and 2A are vertically placed inside a process chamber, where the structures stays vertical by resting its bottom side, the structure might warp. For example, the structure 232 in FIG. 2B illustrates the warping of the substrate member. When the substrate member is subjected to a high temperature, the weight the of the substrate member itself often causes the bottom portion, which is supporting most of the weight, to warp.
  • Therefore, it is to be appreciated that according to various embodiments of the present invention, a substrate member is specifically configured to allow it to be hang by its top portion while being processed in a processing chamber where the substrate member is subject to high temperatures (e.g., 350 degree Celsius and higher). As shown in FIG. 2B, a substrate member 230 stays straight because it is hung on a holding device 234 during processing. While the substrate member 230 is soft and flexible when it is subjected to high temperature, the gravity pulling straight down allows the substrate member 230 to stay straight and uniform.
  • FIG. 2C is a simplified diagram illustrating a composite structure including copper and indium material according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. As an example, the structure 220 shown in FIG. 2C may be a top view of the structures 100, 200, or 210. As shown, the structure 220 includes two portions 224 and 222. The portion 222 is a peripheral portion (i.e., being a part of the structure 220 for the purpose of providing openings that allows the structure to be hang in a processing chamber and/or on other systems). According to a specific embodiment, the peripheral portion is predefined and occupies less than 15% of the structure 220 total area.
  • Within the peripheral portion 222, there are openings 225, 226, 227, and 228. As shown, the opening are aligned on an axis. Depending on the application, the openings may be added, removed, modified, resized, replaced, rearranged, and/or reconfigured. The size and positions of the openings are optimized for the manufacturing processes. For example, the openings 225 and 228 are provided for hanging, while the opening 226 and 227 are provided for transfer, which will be described below. Among other things, the openings need to large enough to allow hanging device to go through. For example, the openings are characterized by a radius of about 10 mm. Also, the openings are positioned at a distance far enough (e.g., more than 10 mm) from the edge of the substrate to ensure that the region between the openings and the edge is strong enough hang the substrate.
  • FIG. 3 is a simplified diagram of a furnace according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. As shown, a furnace 300 includes a process chamber 302 and a chamber end cap 304. According to an embodiment, the reaction chamber 302 is characterized by a volume of more than 200 liters. As shown in FIG. 3, the furnace 300 includes a vacuum-pumping machine that comprises a turbomolecular pump 310 and a rotary pump 312. Depending on the application, the vacuum-pumping machine can be implemented by way of a combination of a mechanical booster pump and a dry pump. For example, the raw material gas and/or a diluting gas such as helium, nitrogen, argon, or hydrogen can be introduced in process chamber 302 via a gas injection pipe 314, if demanded by the specific applications and/or processes. The chamber 302 is evacuated by the turbomolecular pump 310 via the rotary pump 312 that is connected with a manifold 316 via a gate valve and a conductance valve 318. For example, there are no special partitions in the manifold or in the reaction furnaces. A heating element 306 is mounted outside the reaction chamber 302.
  • The furnace includes a holding device 309 that is specific configured to hang substrate 308. In a specific embodiment, the holding device 309 includes elongated members 309A-E that are characterized by a size that allows these devices to go through the openings (e.g., openings 225 and 228 described above and illustrated in FIG. 2C) to hang one or more structures (e.g., structures 100, 200, and/or 300). The shape of the elongated members 309A-E is compatible with the spacing of substrate openings to allow these devices to go through the openings. Each of the elongated members as shown in FIG. 3 is designed to hang a predetermined number of substrates. As explained above, substrates for CIS and/or CIGS devices are typically made glass type material, which is relatively heavy. The elongated member are designed to have enough strength to hang the predetermined number of substrates of known weight. In a specific embodiment, the elongated members are made of heat-resistant non-metal material (e.g., quartz, ceramic, etc), since the temperature in the processing chamber might be high.
  • The furnace 300 can be used for many applications. According to an embodiment, the furnace 300 is used to apply thermal energy to various types of substrates and to introduce various types of gaseous species, among others. In an embodiment, one or more glass plates or substrates are positioned vertically near the center of chamber 302. As an example, substrates 308 can be similar to those described in FIGS. 2 and 2A (e.g., Cu/In layers or composite Cu/In layer overlying a metal contact layer on a substrate). These layers placed in the process chamber in the presence of a gas containing selenium, such as H2Se. After annealing the material for a given period of time, the copper, indium and selenium interdiffuse and react to form a high quality copper indium diselenide (CIS) film. In case where the cooper, indium, and gallium material is provided, CIGS film may be formed.
  • FIG. 3A is a simplified diagram illustrating a processing chamber according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. As an example, the processing chamber 350 is a part of the furnace 300 described above and shares common structures with the furnace 300. As shown in FIG. 3A, the processing chamber 350 includes a hanging device 360, which includes elongated members 360A-C that are configured to fit into the openings of the substrates. In a specific embodiment, the hanging device 360 is removable from the processing chamber.
  • Depending on the application, the hanging device 350 may have a different numbers of elongated members for the purpose of hanging substrates. In a specific embodiment, the holding devices includes elongate members that are characterized by a size that allows these devices to go through the openings (e.g., openings 225 and 228 described above and illustrated in FIG. 2C) to hang one or more structures (e.g., structures 100, 200, and/or 300). The shape of the elongated members 309A-E is compatible with the spacing of substrate openings to allow these devices to go through the openings. Each of the elongated members as shown in FIG. 3 is designed to hang a predetermined number of substrates. As explained above, substrates for CIS and/or CIGS devices are typically made glass type material, which is relatively heavy. The elongated member are designed to have enough strength to hang the predetermined number of substrates of known weight. In a specific embodiment, the elongated members are made of heat-resistant non-metal material (e.g., quartz, ceramic, etc), since the temperature in the processing chamber might be high.
  • FIG. 3B is a top view of the processing chamber 350. As shown, the holding devices 359A and 359B, which are a part of a hanging device (e.g., hanging device 360 described above), are provided to hold the substrate 308 through openings 255, and 258. Transferring devices 360A and 360B (not shown in FIG. 3A) are provided to for transferring the substrate 308 in and out of the processing chamber 350. For example, when transferring the substrate 308 into the processing chamber, the substrate 308 is hang on the transferring devices 360A and 360B. The openings 255 and 258 are then aligned to match the position of holding devices 359A and 359B. Once the elongated members of the holding device 359A and 359B are through the openings 255 and 258, the transferring devices 360A and 360B is disengaged from the substrate 308. It is to be appreciated that substrates share substantially the same size and alignment of openings, a plurality of substrates can be transferred at once from transferring to the holding device inside the processing chamber.
  • FIG. 4 is a simplified diagram of a process for forming a copper indium diselenide layer according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. One of ordinary skill in the art would recognize many other variations, modifications, and alternatives. It is also understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this process and scope of the appended claims.
  • As shown in FIG. 4, the present method can be briefly outlined below.
      • 1. Start;
      • 2. Provide a plurality of substrates having a copper and indium composite structure
      • 3. Introduce a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace;
      • 4. Transfer thermal energy into the furnace to increase a temperature from a first temperature to a second temperature;
      • 5. Maintain the temperature at about the second temperature for a period of time;
      • 6. Remove at least the selenide species from the furnace;
      • 7. Form vacuum in the process chamber;
      • 8. Introduce a hydrogen sulfide species into the furnace;
      • 9. Increasing the temperature to a third temperature;
      • 10. Maintain the temperature at about the third temperature for a period of time;
      • 11. Ramp down the temperature from the third temperature to about the first temperature;
      • 12. Remove gas; and
      • 13. Stop.
  • These steps are merely examples and should not limit the scope of the claims herein. One of ordinary skill in the art would recognize many other variations, modifications, and alternatives. For example, various steps outlined above may be added, removed, modified, rearranged, repeated, and/or overlapped, as contemplated within the scope of the invention. As shown, the method 400 begins at start, step 402. Here, the user of the method begins at a process chamber, such as the one noted above, as well as others. The process chamber can be maintained at about room temperature before proceeding with the present method.
  • A plurality of substrates is transferred into the process chamber, step 402. Each of the plurality of substrates can be provided in a vertical orientation with respect to gravity. The plurality of substrates can be defined by a number N, where N is greater than 5. The plurality of substrates can comprise 5 or more individual substrates. In another embodiment, the plurality of substrates can comprise 40 or more individual substrates. For example, each substrate can have a dimension of 65 cm to 165 cm. But it is understood that other dimensions are possible. Each of the substrates is maintained in substantially a planar configuration free from warp or damage. For example, if the substrates were provided in an orientation other than vertical with respect to gravity, the gravitational force could cause the substrates to sag and warp. This occurs when the substrate material reaches a softening temperature, compromising the structural integrity of the substrate. Typically, glass substrates, particular soda lime glass substrates, begin to soften at 480
    Figure US20110018103A1-20110127-P00001
    ãC. In an embodiment, the substrates are also separate from one another according to an predetermined spacing to ensure even heating and reactions with gaseous species that are to be introduced to the furnace. It is to be appreciated that since the substrates are hang from its top portion, the substrates are naturally aligned in a vertical orientation by the operation of gravity. In an embodiment, the substrates are also separate from one another according to an predetermined spacing to ensure even heating and reactions with gaseous species that are to be introduced to the furnace.
  • After the substrates are positioned into the process chamber, gaseous species, including a hydrogen species, a selenide species, and/or a carrier gas, are introduced into the process chamber in step 406. In an embodiment, the gaseous species includes at least H2Se and nitrogen. In another embodiment, the gaseous species other types of chemically inert gas, such as helium, argon, etc. For example, the substrates are placed in the presence of a gas containing selenium, such as H2Se.
  • The furnace is then heated up to a second temperature ranging from about 350° C. to 450° C. in step 408. The transfer of thermal energy for the purpose of heating the process chamber can be done by heating elements, heating coils, and the like. For example, step 408, among other things, at least starts the formation of a copper indium diselenide film by reactions between the gaseous species and the copper and indium composite (or layered) structure on each of the substrates. In a specific embodiment, separate layers of copper and indium material are diffused into each other to corm a single layer of copper indium alloy material. The second temperature is maintained for 10 to 60 minutes (period of time) at the heat treatment interval between 350 and 45° C., step 410. In another embodiment, the second temperature range can be from 390 to 410° C. For example, the period of time for maintaining the temperature at step 410 is provided to allow formation of the CIS film material. As the temperature increases, the pressure inside the furnace may increase as well. In a specific embodiment, a pressure release valve is used to keep the pressure within the furnace at approximately 650 torr.
  • During the temperature hold (step 410), the removal of the selenide species begins, in step 412. A vacuum is formed in the process chamber through a vacuum pump, in step 414. Once the vacuum is created in the process chamber (step 414), a hydrogen sulfide species is introduced, in step 416. In a specific embodiment, the selenide removal process may continue until the process chamber is in vacuum configuration. After the gas ambience in the furnace has been changed such that the selenide species is removed and the hydrogen sulfide species is introduced, a second temperature ramp up process is initiated, step 418. In a specific embodiment, the selenide species is introduced with nitrogen, which functions as a carrier gas. The temperature of the furnace is increased to a third temperature ranging from about 500 to 525° C. For example, the third temperature is calibrated for reaction between the hydrogen sulfide species and the substrates in furnace.
  • At step 420, temperature is maintained at the third temperature for a period of time until the formation of the CIS layers is completed. The maintaining of time at this interval in the ambience of the furnace comprising the sulfur species is set up according to the purpose of extracting out one or more selenium species from the copper indium diselenide film. It is to be appreciate that a predetermined amount of selenium species are removed. In a specific embodiment, approximately 5% of the selenium species is removed and is replaced by about 5% of sulfur. According to an embodiment, a complete reaction between the selenium material with the CIS film is desired. After the removal of selenium species, a temperature ramp down process is initiated, in step 422. The furnace is cooled to the first temperature of about room temperature, and the remaining gaseous species are removed from the furnace, in step 424. For example, the gaseous species are removed by a vacuum pumping machine. The temperature sequence described above can be illustrated in the temperature profile in FIG. 5.
  • After step 420, additional steps may be performed depending on the desired end product. For example, if a CIS or CIGS type of thin-film solar cell is desired, additional processes are provided to provide additional structures, such as a transparent layer of material such as ZnO overlaying the CIS layer.
  • It is also understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggest to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.
  • FIG. 5 is a simplified diagram of a temperature profile of the furnace according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. The temperature profile further details the temperature ramping process in the above-described method outline (FIG. 4) and specification. An optimized temperature profile (FIG. 5) is provided to illustrate a heating process according to an embodiment of the present invention. The optimized profile regulates the process chamber in order to prevent the warping of large substrates at high temperatures. If the temperature is ramped up too high too quickly, warping or damage may occur due to the softening of glass. In addition, the total amount of thermal energy is determined in consideration of total thermal budget available to the substrates and to maintain the uniformity and structure integrity of the glass substrate. For example, by periodically controlling the temperature of the heating process in steps, the substrate stays at a level of stabilization and relaxing in which the requisite structure integrity is maintained. As explained above, material such as glass tends to deform at a temperature of 480 degrees Celsius or higher, and thus caution is exercised to avoid prolong exposure of substrate at high temperatures. Referring to FIG. 5, while the ambience of a process chamber is maintained with a gaseous species including a hydrogen species and a selenide species and a carrier gas, a plurality of substrates is put into the furnace. The plurality of substrates is provided in a vertical orientation with respect to a direction of gravity, with the plurality of substrates being defined by a number N, where N is greater than 5. In an embodiment, the substrates include glass substrates, such as soda lime glass. The furnace is at a first temperature of about 30° C. (i.e., room temperature). The furnace is then heated up to a second temperature ranging from about 350° C. to 450° C.
  • The second temperature is maintained for 10 to 60 minutes (period of time) at the heat treatment interval between 350 to 450° C. The size of glass substrate can be 10 to 60 minutes. A challenge in processing such large substrate is the warping of the substrate at high temperatures. If the temperature is ramped up directly to T3, warping or damage may occur. As shown, the slope of ramping up from T2 to T3 is calibrated to reduce and/or eliminate the risk of damaging the substrate. By maintaining the temperature in the process chamber at T2 for a period of time, the substrate can relax and stabilize. The maintaining time at this interval is set up according to the purpose of at least initiating formation of the copper indium deselenide film from the copper and indium composite structure on each of the substrates.
  • While the second temperature is maintained, the ambience of the furnace is changed such that the selenide species is removed and a hydrogen sulfide species is introduced.
  • After the gas ambience in the furnace has been changed such that the selenide species is removed and the hydrogen sulfide species is introduced, a second temperature ramp up process is initiated. In this process, the temperature of the furnace is increased to a third temperature ranging from about 500 to 525° C.
  • After the temperature ramp-up process, the temperature of the furnace is maintained for 10 to 40 minutes at the heat treatment interval between 500° C. and 525° C. The maintaining time at this interval in the ambience of the furnace comprising the sulfur and/or hydrogen sulfide species is set up according to the purpose of extracting out one or more selenium species from the copper indium diselenide film. As explained above, a predetermined amount (e.g., 5 to 10%) of selenium species is extracted to provide a proper amount of selenium concentration within the CIS film.
  • After the removal of selenium species, a temperature ramp-down process is initiated, as the furnace is then cooled to the first temperature of about room temperature. According to an embodiment, the cooling process is specifically calibrated. As a result of this process, the copper, indium, and selenium interdiffuse and react to form a high quality copper indium diselenide film.
  • FIG. 5A is a simplified diagram of a temperature profile of the furnace according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. The temperature profile further details the temperature ramping process in the above-described method outline (FIG. 4) and specification. An optimized temperature profile (FIG. 5A) is provided to illustrate a heating process according to an embodiment of the present invention.
  • As shown in FIG. 5A, T1 is approximately at room temperature. At this temperature, substrates are loaded into a furnace. Air is pumped out (e.g., by vacuum device) from the furnace, and H2Se and N2 gas species are introduced into the furnace. For example, these gas species are introduced to the furnace so that at pressure of approximate 650 torr is reached.
  • Next temperature increases from T1 to T2 inside the furnace. For example, the rate of temperature ramping up is optimized to allow the relative uniform reaction between selenium and copper and indium (and possibly with addition of gallium). According to embodiments, the T2 temperature is approximately between 350 and 450
    Figure US20110018103A1-20110127-P00001
    ãC. For example, the furnace stays at the T2 temperature for about 10 to 60 minutes. The time staying at the T2 temperature is to allow for reaction between selenium and copper indium material. In a specific embodiment, separate layers of copper and indium material form copper indium alloy while reacting with selenium material. As shown, CIS and/or CIGS material is formed at T2. During the temperature ramping up process, the pressure inside the furnace is controlled to sustain a relative uniform pressure level of approximate 650 torr. For example, a gas escape valve is used to release gases when the furnace heat up, where pressure increases due to gas expansion at high temperature.
  • After the CIGS material is formed, various gaseous species are again pumped out from the furnace. Then, H2S gas along with inert gases (e.g., nitrogen, argon, helium, etc.) are introduced to the furnace, and the temperature inside the furnace increases from T2 to T3. For example, T3 is approximately 500 to 550 degrees Celsius. In a specific embodiment, the temperature stays at T3 to allow the H2S to interact with the CIGS and/or CIS material. For example, the sulfur replaces approximately 3 to 10% of the selenium material from the CIGS and/or CIS material. After the reaction, H2S gas is removed from the furnace and the furnace cools down.
  • FIG. 6 is a simplified diagram of a thin film copper indium diselenide device according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. As shown, structure 600 is supported on a glass substrate 610. According to an embodiment, the glass substrate comprises soda lime glass, which is about 1 to 3 millimeters thick. A back contact including a metal layer 608 is deposited upon substrate 610. According to an embodiment, layer 608 comprises primarily a film of molybdenum which has been deposited by sputtering. The first active region of the structure 600 comprises a semiconductor layer 606. In an embodiment, the semiconductor layer includes p-type copper indium deselenide (CIS) material. It is to be understood that other the semiconductor layer may include other types of material, such as CIGS, as shown. The second active portion of the structure 600 comprises layers 604 and 602 of n-type semiconductor material, such as CdS or ZnO. For example, in solar cell applications, the CdS and/or ZnO layers function as a winder layers. In FIG. 6, ZnO is shown overlaying the CdS layer. However, it should be understood that other variations are possible. In an alternative embodiments, the ZnO layer 602 overlays another ZnO layer that is characterized by a different resistivity.
  • A photovoltaic cell, or solar cell, such as device 600 described above, is configured as a large-area p-n junction. When photons in sunlight hit the photovoltaic cell, the photons may be reflected, pass through the transparent electrode layer, or become absorbed. The semiconductor layer absorbs the energy causing electron-hole pairs to be created. A photon needs to have greater energy than that of the band gap in order to excite an electron from the valence band into the conduction band. This allows the electrons to flow through the material to produce a current. The complementary positive charges, or holes, flow in the direction opposite of the electrons in a photovoltaic cell. A solar panel having many photovoltaic cells can convert solar energy into direct current electricity.
  • Semiconductors based on the copper indium diselenide (CIS) configuration are especially attractive for thin film solar cell application because of their high optical absorption coefficients and versatile optical and electrical characteristics. These characteristics can in principle be manipulated and tuned for a specific need in a given device. Selenium allows for better uniformity across the layer and so the number of recombination sites in the film are reduced which benefits the quantum efficiency and thus the conversion efficiency.
  • The present invention provides methods for making CIS-based and/or CIGS-based solar cells on a large glass substrate for a solar panel. The device structure described in FIG. 6 can be patterned into individual solar cells on the glass substrate and interconnected to form the solar panel. A cost-effective method for making thin film solar cell panel.
  • It will be appreciated that all of the benefits of the present invention can be achieved regardless of the order of deposition of the copper and indium films. That is, the indium could be deposited first or the films could be deposited as a sandwich or stack of thinner layers.
  • It is also understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggest to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims. Although the above has been generally described in terms of a specific structure for CIS and/or CIGS thin film cells, other specific CIS and/or CIGS configurations can also be used, such as those noted in issued U.S. Pat. No. 4,611,091 and U.S. Pat. No. 4,612,411, which are hereby incorporated by reference herein, without departing from the invention described by the claims herein.

Claims (31)

1. A method for fabricating a copper indium diselenide semiconductor film comprising:
providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the substrate including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening;
transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening;
introducing a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates;
maintaining the temperature at about the second temperature for a period of time;
removing at least the selenide species from the furnace;
introducing a hydrogen sulfide species into the furnace;
increasing a temperature to a third temperature, the third temperature ranging from about 500 to 525° C. while the plurality of substrates are maintained in an environment including a sulfur species to extract out one or more selenium species from the copper indium diselenide film.
2. The method of claim 1 further comprising removing the plurality of substrates from the furnace using a transferring device, the transferring device including at least an elongated member that is configured to go through at least the second opening.
3. (canceled)
4. The method of claim 1 further comprising removing the peripheral region.
5. The method of claim 1 wherein the copper and indium composite structure further comprises gallium.
6. The method of claim 1 wherein a first amount of the selenium is replaced by a second amount of sulfur at the copper indium diselenide film.
7-12. (canceled)
13. The method of claim 1 wherein the second temperature ranges from about 390° C. to about 410° C.
14. The method of claim 1 wherein the gaseous species comprises H2Se.
15. The method of claim 1 wherein:
the hanging device includes a plurality of elongated members, the plurality of elongated members includes a second elongated member;
the first elongated member is configured to hang a first set of substrates, the first set of substrates including less than 8 substrates;
the second the first elongated member configured to hang a second set of substrates, the second set of substrates including less than 8 substrates.
16. (canceled)
17. The method of claim 1 wherein the carrier gas comprises nitrogen gas.
18. (canceled)
19. (canceled)
20. The method of claim 1 wherein the furnace is characterized by a temperature profile having a uniformity of about less than 5% difference within the furnace.
21. The method of claim 1 wherein each of the substrates is maintained in substantially a planar configuration free from warp or damage.
22-24. (canceled)
25. The method of claim 1 further comprising maintaining the hydrogen sulfide species to a concentration ranging from about 10 to about 25% of a total volume within the furnace.
26. The method of claim 1 wherein the removing of the selenide species from the furnace occurs until the furnace is in a vacuum configuration.
27. (canceled)
28. The method of claim 1 wherein the substrates further comprises gallium material.
29. The method of claim 1 wherein the copper and indium composite structure comprises a copper and indium alloyed material.
30. The method of claim 1 wherein the copper and indium composite structure comprises a layer of copper material and a layer of indium material.
31. A partially processed semiconductor device, the device comprises:
a substrate member characterized by a first thickness and a first surface area, the substrate member being characterized by a substantially rectangular shape, the substrate member including a peripheral region, the peripheral region being smaller 15% of the first surface area, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening;
a first contact layer overlaying the substrate member, the second contact layer being characterized by a second thickness and a first conductivity; and
a semiconductor layer overlaying the first contact layer, the semiconductor comprises copper and indium material.
32. The device of claim 30 wherein the substrate member comprises glass material.
33. (canceled)
34. (canceled)
35. The device of claim 31 the semiconductor layer further comprises gallium material.
36. (canceled)
37. (canceled)
38. The device of claim 31 wherein the semiconductor layer further comprises selenium material.
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