JP2007524119A5 - - Google Patents
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- JP2007524119A5 JP2007524119A5 JP2006549608A JP2006549608A JP2007524119A5 JP 2007524119 A5 JP2007524119 A5 JP 2007524119A5 JP 2006549608 A JP2006549608 A JP 2006549608A JP 2006549608 A JP2006549608 A JP 2006549608A JP 2007524119 A5 JP2007524119 A5 JP 2007524119A5
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- polymer layer
- nanocrystals
- polymer
- nanocrystal
- refractive index
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- 239000002159 nanocrystal Substances 0.000 claims description 276
- 229920000642 polymer Polymers 0.000 claims description 234
- 230000027455 binding Effects 0.000 claims description 100
- 239000003446 ligand Substances 0.000 claims description 96
- 239000000203 mixture Substances 0.000 claims description 92
- 239000002114 nanocomposite Substances 0.000 claims description 85
- 239000011159 matrix material Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 45
- 230000003287 optical Effects 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 40
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 39
- 229920001296 polysiloxane Polymers 0.000 claims description 34
- 239000004054 semiconductor nanocrystal Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 23
- 239000002904 solvent Substances 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 22
- 150000001335 aliphatic alkanes Chemical group 0.000 claims description 17
- 238000002156 mixing Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 230000004059 degradation Effects 0.000 claims description 3
- 238000006731 degradation reaction Methods 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 194
- 238000003786 synthesis reaction Methods 0.000 description 38
- 239000000243 solution Substances 0.000 description 36
- 229910052984 zinc sulfide Inorganic materials 0.000 description 33
- 229910052950 sphalerite Inorganic materials 0.000 description 31
- 239000011257 shell material Substances 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 26
- 230000002194 synthesizing Effects 0.000 description 24
- 238000010521 absorption reaction Methods 0.000 description 23
- 238000000605 extraction Methods 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 19
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000000047 product Substances 0.000 description 17
- 239000011162 core material Substances 0.000 description 16
- 238000009877 rendering Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 16
- 239000002131 composite material Substances 0.000 description 15
- 238000010192 crystallographic characterization Methods 0.000 description 15
- 238000001914 filtration Methods 0.000 description 14
- 238000007792 addition Methods 0.000 description 12
- AQCDIIAORKRFCD-UHFFFAOYSA-N Cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 11
- 239000002253 acid Substances 0.000 description 11
- 238000004458 analytical method Methods 0.000 description 11
- 239000003086 colorant Substances 0.000 description 11
- 239000004094 surface-active agent Substances 0.000 description 11
- 239000012530 fluid Substances 0.000 description 10
- 238000004088 simulation Methods 0.000 description 10
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 10
- 238000000295 emission spectrum Methods 0.000 description 9
- 230000012010 growth Effects 0.000 description 9
- 239000003921 oil Substances 0.000 description 9
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 9
- 230000003595 spectral Effects 0.000 description 9
- 210000003128 Head Anatomy 0.000 description 8
- 238000005119 centrifugation Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 230000002708 enhancing Effects 0.000 description 8
- 230000005284 excitation Effects 0.000 description 8
- 238000011068 load Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 239000003039 volatile agent Substances 0.000 description 8
- -1 ZnSe Inorganic materials 0.000 description 7
- 239000011258 core-shell material Substances 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 230000001965 increased Effects 0.000 description 7
- 239000012230 colorless oil Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 238000003917 TEM image Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N Trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 5
- 150000008064 anhydrides Chemical class 0.000 description 5
- 230000003750 conditioning Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000001429 visible spectrum Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000001993 wax Substances 0.000 description 5
- 229910002808 Si–O–Si Inorganic materials 0.000 description 4
- QIQXTHQIDYTFRH-UHFFFAOYSA-N Stearic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002329 infrared spectrum Methods 0.000 description 4
- 230000000670 limiting Effects 0.000 description 4
- NJRWNWYFPOFDFN-UHFFFAOYSA-L phosphonate(2-) Chemical compound [O-][P]([O-])=O NJRWNWYFPOFDFN-UHFFFAOYSA-L 0.000 description 4
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 4
- 238000006862 quantum yield reaction Methods 0.000 description 4
- 230000002829 reduced Effects 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000011550 stock solution Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 102000014961 Protein Precursors Human genes 0.000 description 3
- 108010078762 Protein Precursors Proteins 0.000 description 3
- TUQOTMZNTHZOKS-UHFFFAOYSA-N Tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N acetic acid ethyl ester Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000008079 hexane Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- ZVAYUUUQOCPZCZ-UHFFFAOYSA-N 4-(diethoxyphosphorylmethyl)aniline Chemical compound CCOP(=O)(OCC)CC1=CC=C(N)C=C1 ZVAYUUUQOCPZCZ-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 2
- LVQULNGDVIKLPK-UHFFFAOYSA-N Aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N Aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 229910015894 BeTe Inorganic materials 0.000 description 2
- 238000003775 Density Functional Theory Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 210000004940 Nucleus Anatomy 0.000 description 2
- 229910003849 O-Si Inorganic materials 0.000 description 2
- 229910003872 O—Si Inorganic materials 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N Phosphorus pentoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- 210000000538 Tail Anatomy 0.000 description 2
- 230000036462 Unbound Effects 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- WEVYAHXRMPXWCK-UHFFFAOYSA-N acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 230000002596 correlated Effects 0.000 description 2
- 230000000875 corresponding Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000002707 nanocrystalline material Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002073 nanorod Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000003071 parasitic Effects 0.000 description 2
- HVAMZGADVCBITI-UHFFFAOYSA-N pent-4-enoic acid Chemical compound OC(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic Effects 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
- 239000011118 polyvinyl acetate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 2
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 2
- 238000002211 ultraviolet spectrum Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- SNYNNFDVNITLRQ-UHFFFAOYSA-N 2,2,4,4,6,6,8-heptamethyl-1,3,5,7,2,4,6,8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 SNYNNFDVNITLRQ-UHFFFAOYSA-N 0.000 description 1
- FKDHHVKWGRFRTG-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine Chemical compound [N-]1OC(=N)C=[N+]1N1CCOCC1 FKDHHVKWGRFRTG-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RLECCBFNWDXKPK-UHFFFAOYSA-N Bis(trimethylsilyl)sulfide Chemical compound C[Si](C)(C)S[Si](C)(C)C RLECCBFNWDXKPK-UHFFFAOYSA-N 0.000 description 1
- 230000005457 Black-body radiation Effects 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N Cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- NKNDPYCGAZPOFS-UHFFFAOYSA-M Copper(I) bromide Chemical compound Br[Cu] NKNDPYCGAZPOFS-UHFFFAOYSA-M 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M Copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910005829 GeS Inorganic materials 0.000 description 1
- 229910005866 GeSe Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229940097275 Indigo Drugs 0.000 description 1
- 240000007871 Indigofera tinctoria Species 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N Indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- VCEXCCILEWFFBG-UHFFFAOYSA-N Mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 1
- LXCIHXPVYQKJAG-UHFFFAOYSA-N N-[aziridin-1-yl-(2-methylaziridin-1-yl)phosphoryl]-N-prop-2-enylprop-2-en-1-amine Chemical compound CC1CN1P(=O)(N(CC=C)CC=C)N1CC1 LXCIHXPVYQKJAG-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 241000287463 Phalacrocorax Species 0.000 description 1
- 241000352262 Potato virus B Species 0.000 description 1
- 238000004639 Schlenk technique Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N Simethicone Chemical class C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- GDDVTIGTERZVBW-UHFFFAOYSA-N [dimethyl(trimethylsilyloxy)silyl]oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)(C)O[Si](C)(C)C GDDVTIGTERZVBW-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 230000003044 adaptive Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 230000003667 anti-reflective Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- DSVRVHYFPPQFTI-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane;platinum Chemical compound [Pt].C[Si](C)(C)O[Si](C)(C=C)C=C DSVRVHYFPPQFTI-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000000903 blocking Effects 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- IYYIVELXUANFED-UHFFFAOYSA-N bromo(trimethyl)silane Chemical compound C[Si](C)(C)Br IYYIVELXUANFED-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- HEDRZPFGACZZDS-MICDWDOJSA-N cdcl3 Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 1
- 210000004027 cells Anatomy 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- LQEJKDNALLXRCT-UHFFFAOYSA-N chloroform;toluene Chemical compound ClC(Cl)Cl.CC1=CC=CC=C1 LQEJKDNALLXRCT-UHFFFAOYSA-N 0.000 description 1
- 229910052956 cinnabar Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000593 degrading Effects 0.000 description 1
- 230000002939 deleterious Effects 0.000 description 1
- OOYIOIOOWUGAHD-UHFFFAOYSA-L disodium;2',4',5',7'-tetrabromo-4,5,6,7-tetrachloro-3-oxospiro[2-benzofuran-1,9'-xanthene]-3',6'-diolate Chemical compound [Na+].[Na+].O1C(=O)C(C(=C(Cl)C(Cl)=C2Cl)Cl)=C2C21C1=CC(Br)=C([O-])C(Br)=C1OC1=C(Br)C([O-])=C(Br)C=C21 OOYIOIOOWUGAHD-UHFFFAOYSA-L 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229950008597 drug INN Drugs 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052949 galena Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KLGZELKXQMTEMM-UHFFFAOYSA-N hydride Chemical group [H-] KLGZELKXQMTEMM-UHFFFAOYSA-N 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000002789 length control Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- SWGZAKPJNWCPRY-UHFFFAOYSA-N methyl-bis(trimethylsilyloxy)silicon Chemical compound C[Si](C)(C)O[Si](C)O[Si](C)(C)C SWGZAKPJNWCPRY-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 230000000051 modifying Effects 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N o-xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing Effects 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000750 progressive Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000002390 rotary evaporation Methods 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003068 static Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000001702 transmitter Effects 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53696204P | 2004-01-15 | 2004-01-15 | |
US60/536,962 | 2004-01-15 | ||
US63578404P | 2004-12-15 | 2004-12-15 | |
US60/635,784 | 2004-12-15 | ||
PCT/US2005/001141 WO2005067524A2 (en) | 2004-01-15 | 2005-01-13 | Nanocrystal doped matrixes |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007524119A JP2007524119A (ja) | 2007-08-23 |
JP2007524119A5 true JP2007524119A5 (US07645397-20100112-C00004.png) | 2008-02-28 |
JP4789809B2 JP4789809B2 (ja) | 2011-10-12 |
Family
ID=34798871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006549608A Active JP4789809B2 (ja) | 2004-01-15 | 2005-01-13 | ナノ結晶をドーピングしたマトリックス |
Country Status (4)
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2006
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2008
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