JP2007516615A - 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法 - Google Patents

電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法 Download PDF

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JP2007516615A
JP2007516615A JP2006545431A JP2006545431A JP2007516615A JP 2007516615 A JP2007516615 A JP 2007516615A JP 2006545431 A JP2006545431 A JP 2006545431A JP 2006545431 A JP2006545431 A JP 2006545431A JP 2007516615 A JP2007516615 A JP 2007516615A
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electrode
gallium nitride
nitride material
defining layer
material region
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JP2007516615A5 (enExample
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ジョンソン，ジェリー・ダブリュー
セリエン，ロバート・ジェイ
フェスカン，アンドレイ
ブラウン，ジェフリー・ディー
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ニトロネックス・コーポレーション
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006545431A 2003-12-17 2004-12-16 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法 Withdrawn JP2007516615A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/740,376 US7071498B2 (en) 2003-12-17 2003-12-17 Gallium nitride material devices including an electrode-defining layer and methods of forming the same
PCT/US2004/042260 WO2005059983A1 (en) 2003-12-17 2004-12-16 Gallium nitride material devices including an electrode-defining layer and methods of forming the same

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JP2011266458A Division JP2012089867A (ja) 2003-12-17 2011-12-06 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法

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JP2007516615A true JP2007516615A (ja) 2007-06-21
JP2007516615A5 JP2007516615A5 (enExample) 2008-02-07

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JP2006545431A Withdrawn JP2007516615A (ja) 2003-12-17 2004-12-16 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法
JP2011266458A Pending JP2012089867A (ja) 2003-12-17 2011-12-06 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法

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US (2) US7071498B2 (enExample)
JP (2) JP2007516615A (enExample)
KR (1) KR20060126712A (enExample)
WO (1) WO2005059983A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288289A (ja) * 2007-05-16 2008-11-27 Oki Electric Ind Co Ltd 電界効果トランジスタとその製造方法
JP2009071058A (ja) * 2007-09-13 2009-04-02 Oki Electric Ind Co Ltd Ｍｉｓ型ｆｅｔ及びその製造方法
JP2009076874A (ja) * 2007-08-31 2009-04-09 Sumitomo Electric Ind Ltd ショットキーバリアダイオードおよびその製造方法
JP2009076866A (ja) * 2007-08-31 2009-04-09 Sumitomo Electric Ind Ltd ショットキーバリアダイオード
JP2013026442A (ja) * 2011-07-21 2013-02-04 Sanken Electric Co Ltd 窒化物半導体装置及びその製造方法
JP2013247196A (ja) * 2012-05-24 2013-12-09 Rohm Co Ltd 窒化物半導体装置およびその製造方法
JP2019186527A (ja) * 2019-01-17 2019-10-24 三菱電機株式会社 電界効果型トランジスタ

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