JP2007516615A5 - - Google Patents

Download PDF

Info

Publication number
JP2007516615A5
JP2007516615A5 JP2006545431A JP2006545431A JP2007516615A5 JP 2007516615 A5 JP2007516615 A5 JP 2007516615A5 JP 2006545431 A JP2006545431 A JP 2006545431A JP 2006545431 A JP2006545431 A JP 2006545431A JP 2007516615 A5 JP2007516615 A5 JP 2007516615A5
Authority
JP
Japan
Prior art keywords
electrode
semiconductor structure
gallium nitride
nitride material
material region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006545431A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007516615A (ja
Filing date
Publication date
Priority claimed from US10/740,376 external-priority patent/US7071498B2/en
Application filed filed Critical
Publication of JP2007516615A publication Critical patent/JP2007516615A/ja
Publication of JP2007516615A5 publication Critical patent/JP2007516615A5/ja
Withdrawn legal-status Critical Current

Links

JP2006545431A 2003-12-17 2004-12-16 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法 Withdrawn JP2007516615A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/740,376 US7071498B2 (en) 2003-12-17 2003-12-17 Gallium nitride material devices including an electrode-defining layer and methods of forming the same
PCT/US2004/042260 WO2005059983A1 (en) 2003-12-17 2004-12-16 Gallium nitride material devices including an electrode-defining layer and methods of forming the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011266458A Division JP2012089867A (ja) 2003-12-17 2011-12-06 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法

Publications (2)

Publication Number Publication Date
JP2007516615A JP2007516615A (ja) 2007-06-21
JP2007516615A5 true JP2007516615A5 (enExample) 2008-02-07

Family

ID=34677862

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006545431A Withdrawn JP2007516615A (ja) 2003-12-17 2004-12-16 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法
JP2011266458A Pending JP2012089867A (ja) 2003-12-17 2011-12-06 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011266458A Pending JP2012089867A (ja) 2003-12-17 2011-12-06 電極規定層を包含する窒化ガリウム材料デバイスおよびその形成方法

Country Status (4)

Country Link
US (2) US7071498B2 (enExample)
JP (2) JP2007516615A (enExample)
KR (1) KR20060126712A (enExample)
WO (1) WO2005059983A1 (enExample)

Families Citing this family (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267783B1 (en) * 2001-07-24 2017-06-21 Cree, Inc. Insulating gate algan/gan hemt
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
US8174048B2 (en) * 2004-01-23 2012-05-08 International Rectifier Corporation III-nitride current control device and method of manufacture
WO2005081304A1 (ja) * 2004-02-20 2005-09-01 Nec Corporation 電界効果トランジスタ
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7566917B2 (en) * 2004-09-28 2009-07-28 Sharp Kabushiki Kaisha Electronic device and heterojunction FET
US8441030B2 (en) * 2004-09-30 2013-05-14 International Rectifier Corporation III-nitride multi-channel heterojunction interdigitated rectifier
WO2006050403A2 (en) * 2004-10-28 2006-05-11 Nitronex Corporation Gallium nitride/silicon based monolithic microwave integrated circuit
US7247889B2 (en) 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
KR100620967B1 (ko) * 2005-02-21 2006-09-14 삼성전자주식회사 누설전류 발생이 감소된 쇼트키 다이오드 및 그 제조방법
US7821030B2 (en) * 2005-03-02 2010-10-26 Panasonic Corporation Semiconductor device and method for manufacturing the same
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
JP4730529B2 (ja) * 2005-07-13 2011-07-20 サンケン電気株式会社 電界効果トランジスタ
US20070018199A1 (en) * 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
EP1938385B1 (en) * 2005-09-07 2014-12-03 Cree, Inc. Transistors with fluorine treatment
KR20080072833A (ko) * 2005-10-04 2008-08-07 니트로넥스 코오포레이션 광대역 애플리케이션을 위한 갈륨 나이트라이드 물질트랜지스터 및 방법
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
US9608102B2 (en) 2005-12-02 2017-03-28 Infineon Technologies Americas Corp. Gallium nitride material devices and associated methods
US8435879B2 (en) * 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles
US7709269B2 (en) * 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
WO2007122790A1 (ja) * 2006-03-28 2007-11-01 Nec Corporation 電界効果トランジスタ
US7388236B2 (en) * 2006-03-29 2008-06-17 Cree, Inc. High efficiency and/or high power density wide bandgap transistors
JP5231719B2 (ja) * 2006-03-30 2013-07-10 富士通株式会社 電界効果トランジスタの製造方法
US20080035143A1 (en) * 2006-08-14 2008-02-14 Sievers Robert E Human-powered dry powder inhaler and dry powder inhaler compositions
US8283699B2 (en) * 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
US7692263B2 (en) * 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
JP2008288289A (ja) * 2007-05-16 2008-11-27 Oki Electric Ind Co Ltd 電界効果トランジスタとその製造方法
US7745848B1 (en) 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
US7875537B2 (en) * 2007-08-29 2011-01-25 Cree, Inc. High temperature ion implantation of nitride based HEMTs
JP5446161B2 (ja) * 2007-08-31 2014-03-19 住友電気工業株式会社 ショットキーバリアダイオードおよびその製造方法
JP2009076866A (ja) * 2007-08-31 2009-04-09 Sumitomo Electric Ind Ltd ショットキーバリアダイオード
JP5386810B2 (ja) * 2007-09-13 2014-01-15 沖電気工業株式会社 Ｍｉｓ型ｆｅｔ及びその製造方法
US7915643B2 (en) 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US7750370B2 (en) 2007-12-20 2010-07-06 Northrop Grumman Space & Mission Systems Corp. High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer
US8026581B2 (en) * 2008-02-05 2011-09-27 International Rectifier Corporation Gallium nitride material devices including diamond regions and methods associated with the same
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
JPWO2010001607A1 (ja) * 2008-07-03 2011-12-15 パナソニック株式会社 窒化物半導体装置
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US8816356B2 (en) * 2008-09-30 2014-08-26 Youngstown State University Silicon carbide barrier diode
KR101103775B1 (ko) * 2008-11-21 2012-01-06 페어차일드코리아반도체 주식회사 질화물계 반도체 소자 및 그 제조방법
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
JP5595685B2 (ja) * 2009-07-28 2014-09-24 パナソニック株式会社 半導体装置
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
JP5521447B2 (ja) * 2009-09-07 2014-06-11 富士通株式会社 半導体装置の製造方法
US20110075392A1 (en) * 2009-09-29 2011-03-31 Astec International Limited Assemblies and Methods for Directly Connecting Integrated Circuits to Electrically Conductive Sheets
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8492773B2 (en) * 2010-04-23 2013-07-23 Intersil Americas Inc. Power devices with integrated protection devices: structures and methods
KR101214742B1 (ko) 2010-12-09 2012-12-21 삼성전기주식회사 질화물계 반도체 소자 및 그 제조 방법
KR101193357B1 (ko) 2010-12-09 2012-10-19 삼성전기주식회사 질화물계 반도체 소자 및 그 제조 방법
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
KR101219441B1 (ko) * 2010-12-27 2013-01-11 전자부품연구원 미세 게이트 컨택홀을 갖는 질화물계 반도체 소자 및 그의 제조 방법
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
JP5872810B2 (ja) * 2011-07-21 2016-03-01 サンケン電気株式会社 窒化物半導体装置及びその製造方法
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9601638B2 (en) 2011-10-19 2017-03-21 Nxp Usa, Inc. GaN-on-Si switch devices
US8530978B1 (en) * 2011-12-06 2013-09-10 Hrl Laboratories, Llc High current high voltage GaN field effect transistors and method of fabricating same
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
TWI484626B (zh) * 2012-02-21 2015-05-11 璨圓光電股份有限公司 半導體發光元件及具有此半導體發光元件的發光裝置
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9136341B2 (en) 2012-04-18 2015-09-15 Rf Micro Devices, Inc. High voltage field effect transistor finger terminations
JP6090764B2 (ja) * 2012-05-24 2017-03-08 ローム株式会社 窒化物半導体装置およびその製造方法
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9917080B2 (en) * 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
JP6085442B2 (ja) 2012-09-28 2017-02-22 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
KR20140066015A (ko) * 2012-11-22 2014-05-30 삼성전자주식회사 이종 접합 전계 효과 트랜지스터 및 제조 방법
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
CN103646968B (zh) * 2013-11-27 2017-01-11 西安电子科技大学 一种基于电容结构的hemt栅泄漏电流分离结构与方法
US10276712B2 (en) 2014-05-29 2019-04-30 Hrl Laboratories, Llc III-nitride field-effect transistor with dual gates
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
CN104062485B (zh) * 2014-07-04 2016-08-17 西安电子科技大学 Hemt器件栅泄漏电流中台面泄漏电流的测试方法
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
JP6562222B2 (ja) * 2014-07-29 2019-08-21 パナソニックＩｐマネジメント株式会社 窒化物半導体装置
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US9812532B1 (en) 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
US10211294B2 (en) 2015-09-08 2019-02-19 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising low atomic mass species
US9627473B2 (en) 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US9704705B2 (en) 2015-09-08 2017-07-11 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via reaction with active species
US9673281B2 (en) 2015-09-08 2017-06-06 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
US9773898B2 (en) 2015-09-08 2017-09-26 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising spatially patterned implanted species
US9799520B2 (en) 2015-09-08 2017-10-24 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via back side implantation
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
US9806182B2 (en) 2015-09-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using elemental diboride diffusion barrier regions
US9806159B2 (en) 2015-10-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Tuned semiconductor amplifier
WO2017087197A1 (en) 2015-11-19 2017-05-26 Hrl Laboratories, Llc Iii-nitride field-effect transistor with dual gates
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
US20170302245A1 (en) 2016-04-15 2017-10-19 Macom Technology Solutions Holdings, Inc. Ultra-broad bandwidth matching technique
US10651317B2 (en) 2016-04-15 2020-05-12 Macom Technology Solutions Holdings, Inc. High-voltage lateral GaN-on-silicon Schottky diode
US10541323B2 (en) 2016-04-15 2020-01-21 Macom Technology Solutions Holdings, Inc. High-voltage GaN high electron mobility transistors
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
KR101936790B1 (ko) 2017-02-20 2019-01-09 광주과학기술원 메탈-반도체-메탈 이차원 전자 가스 버랙터 및 그 제조방법
US11056483B2 (en) 2018-01-19 2021-07-06 Macom Technology Solutions Holdings, Inc. Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
US10950598B2 (en) 2018-01-19 2021-03-16 Macom Technology Solutions Holdings, Inc. Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor
US11233047B2 (en) 2018-01-19 2022-01-25 Macom Technology Solutions Holdings, Inc. Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon
US11158575B2 (en) 2018-06-05 2021-10-26 Macom Technology Solutions Holdings, Inc. Parasitic capacitance reduction in GaN-on-silicon devices
WO2020018915A1 (en) 2018-07-19 2020-01-23 Macom Technology Solutions Holdings, Inc. Iii-nitride material semiconductor structures on conductive substrates
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
JP6752304B2 (ja) * 2019-01-17 2020-09-09 三菱電機株式会社 電界効果型トランジスタ
CN112531025B (zh) * 2019-09-17 2024-01-30 联华电子股份有限公司 高电子迁移率晶体管
US11600614B2 (en) 2020-03-26 2023-03-07 Macom Technology Solutions Holdings, Inc. Microwave integrated circuits including gallium-nitride devices on silicon
CN119836021A (zh) * 2024-12-24 2025-04-15 西安电子科技大学芜湖研究院 基于底电极控制的GaN基紫外光电探测器及其制备方法

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843440A (en) * 1981-12-04 1989-06-27 United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Microwave field effect transistor
JPS61177781A (ja) * 1985-02-02 1986-08-09 Sony Corp 電界効果トランジスタの製造方法
US4865952A (en) * 1986-09-20 1989-09-12 Mitsubishi Denki Kabushiki Kaisha Method of forming a T-shaped control electrode through an X-ray mask
JPS63136575A (ja) * 1986-11-27 1988-06-08 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法
JPH0225040A (ja) * 1988-07-13 1990-01-26 Fujitsu Ltd 半導体装置の製造方法
JP2751935B2 (ja) * 1989-06-14 1998-05-18 富士通株式会社 半導体装置の製造方法
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
EP0569745A1 (de) * 1992-05-14 1993-11-18 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Feldeffekttransistoren mit asymmetrischer Gate-Struktur
JP3109279B2 (ja) * 1992-09-30 2000-11-13 日本電気株式会社 半導体装置の製造方法
JPH06342811A (ja) * 1993-06-01 1994-12-13 Nec Corp 電界効果型トランジスタ及びその製造方法
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5838029A (en) * 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
WO1996041906A1 (en) 1995-06-13 1996-12-27 Advanced Technology Materials, Inc. Bulk single crystal gallium nitride and method of making same
JP2795226B2 (ja) * 1995-07-27 1998-09-10 日本電気株式会社 半導体発光素子及びその製造方法
DE69633203T2 (de) * 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
JP3396356B2 (ja) * 1995-12-11 2003-04-14 三菱電機株式会社 半導体装置，及びその製造方法
JP3409958B2 (ja) * 1995-12-15 2003-05-26 株式会社東芝 半導体発光素子
US5915164A (en) * 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5929467A (en) * 1996-12-04 1999-07-27 Sony Corporation Field effect transistor with nitride compound
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
JPH10209177A (ja) * 1997-01-23 1998-08-07 Nec Corp 電界効果トランジスタ及びそのゲート電極の形成方法
JP3621221B2 (ja) * 1997-03-18 2005-02-16 沖電気工業株式会社 半導体装置の製造方法
JP3546634B2 (ja) * 1997-03-19 2004-07-28 ソニー株式会社 窒化物系化合物半導体の選択エッチング方法および半導体装置の製造方法
JP3491492B2 (ja) * 1997-04-09 2004-01-26 松下電器産業株式会社 窒化ガリウム結晶の製造方法
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
JPH10335637A (ja) * 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6261931B1 (en) * 1997-06-20 2001-07-17 The Regents Of The University Of California High quality, semi-insulating gallium nitride and method and system for forming same
US6146457A (en) * 1997-07-03 2000-11-14 Cbl Technologies, Inc. Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
JPH11135522A (ja) * 1997-08-28 1999-05-21 Nec Corp 化合物半導体装置の製造方法
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3517867B2 (ja) * 1997-10-10 2004-04-12 豊田合成株式会社 ＧａＮ系の半導体素子
JP3225902B2 (ja) * 1997-10-31 2001-11-05 日本電気株式会社 半導体装置の製造方法
JP3036495B2 (ja) * 1997-11-07 2000-04-24 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
US6051849A (en) * 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6180270B1 (en) * 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
US6064078A (en) * 1998-05-22 2000-05-16 Xerox Corporation Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP3450713B2 (ja) * 1998-07-21 2003-09-29 富士通カンタムデバイス株式会社 半導体装置およびその製造方法、マイクロストリップ線路の製造方法
SG94712A1 (en) * 1998-09-15 2003-03-18 Univ Singapore Method of fabricating group-iii nitride-based semiconductor device
US6177688B1 (en) * 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6329063B2 (en) * 1998-12-11 2001-12-11 Nova Crystals, Inc. Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
US20010042503A1 (en) * 1999-02-10 2001-11-22 Lo Yu-Hwa Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
US6426512B1 (en) * 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
TW474024B (en) 1999-08-16 2002-01-21 Cornell Res Foundation Inc Passivation of GaN based FETs
JP2001085670A (ja) 1999-09-14 2001-03-30 Nec Corp 電界効果型トランジスタ及びその製造方法
US6441393B2 (en) * 1999-11-17 2002-08-27 Lumileds Lighting U.S., Llc Semiconductor devices with selectively doped III-V nitride layers
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6291319B1 (en) * 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6380108B1 (en) * 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
US6498111B1 (en) * 2000-08-23 2002-12-24 Cree Lighting Company Fabrication of semiconductor materials and devices with controlled electrical conductivity
US6521961B1 (en) * 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
FR2810159B1 (fr) * 2000-06-09 2005-04-08 Centre Nat Rech Scient Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche
JP4186032B2 (ja) * 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
US6610144B2 (en) * 2000-07-21 2003-08-26 The Regents Of The University Of California Method to reduce the dislocation density in group III-nitride films
US6624452B2 (en) * 2000-07-28 2003-09-23 The Regents Of The University Of California Gallium nitride-based HFET and a method for fabricating a gallium nitride-based HFET
AU2001279163A1 (en) * 2000-08-04 2002-02-18 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
JP2002076023A (ja) * 2000-09-01 2002-03-15 Nec Corp 半導体装置
US6391748B1 (en) * 2000-10-03 2002-05-21 Texas Tech University Method of epitaxial growth of high quality nitride layers on silicon substrates
JP2002118122A (ja) * 2000-10-06 2002-04-19 Nec Corp ショットキゲート電界効果トランジスタ
US6583034B2 (en) * 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6406965B1 (en) * 2001-04-19 2002-06-18 Trw Inc. Method of fabricating HBT devices
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
JP2003203930A (ja) * 2002-01-08 2003-07-18 Nec Compound Semiconductor Devices Ltd ショットキーゲート電界効果型トランジスタ
US6841409B2 (en) * 2002-01-17 2005-01-11 Matsushita Electric Industrial Co., Ltd. Group III-V compound semiconductor and group III-V compound semiconductor device using the same
US6903385B2 (en) * 2002-10-09 2005-06-07 Sensor Electronic Technology, Inc. Semiconductor structure having a textured nitride-based layer
JP2004253620A (ja) * 2003-02-20 2004-09-09 Nec Compound Semiconductor Devices Ltd 電界効果型トランジスタおよびその製造方法
US7135720B2 (en) * 2003-08-05 2006-11-14 Nitronex Corporation Gallium nitride material transistors and methods associated with the same
US6867078B1 (en) * 2003-11-19 2005-03-15 Freescale Semiconductor, Inc. Method for forming a microwave field effect transistor with high operating voltage
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
US7238560B2 (en) * 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US7247889B2 (en) * 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates

Similar Documents

Publication Publication Date Title
JP2007516615A5 (enExample)
US10109729B2 (en) High electron mobility transistors
US9543391B2 (en) High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the same
EP1191603A3 (en) Trench MOS device and termination structure
CN107112218B (zh) Iii-n器件中的凹陷欧姆接触
WO2009141678A3 (en) Mos device with integrated schottky diode in active region contact trench
JP2006511961A5 (enExample)
KR100327347B1 (en) Metal oxide semiconductor field effect transistor having reduced resistance between source and drain and fabricating method thereof
EP1748489A3 (en) Semiconductor imaging device and fabrication process thereof
EP1255302A3 (en) Method for fabricating forward and reverse blocking devices
TW201703253A (zh) 氮化物半導體裝置
TW200629548A (en) Nonplanar device with thinned lower body portion and method of fabrication
EP2996154A3 (en) Non-planar germanium quantum well devices
JP2010147477A5 (enExample)
EP1244150A3 (en) Vertical MOSFET having a trench gate electrode and method of making the same
EP2479790A3 (en) Nitride-based transistors and fabrication methods with an etch stop layer
WO2010051133A3 (en) Semiconductor devices having faceted silicide contacts, and related fabrication methods
JP2020120107A5 (ja) 半導体装置
JP2011503871A5 (enExample)
JP2013544021A5 (enExample)
EP2302686A3 (en) Guard ring for semiconductor devices
KR970008652A (ko) 개선된 포켓 영역을 갖는 mos 전계 효과 트랜지스터 및 그 제조 방법
EP1965436A3 (en) Silicon carbide self-aligned epitaxial mosfet and method of manufacturing thereof
US20140252499A1 (en) Metal-Oxide-Semiconductor Field-Effect Transistor with Extended Gate Dielectric Layer
JP2008227495A5 (enExample)