|
US8432012B2
(en)
|
2006-08-01 |
2013-04-30 |
Cree, Inc. |
Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
|
|
US7728402B2
(en)
*
|
2006-08-01 |
2010-06-01 |
Cree, Inc. |
Semiconductor devices including schottky diodes with controlled breakdown
|
|
EP2631951B1
(en)
|
2006-08-17 |
2017-10-11 |
Cree, Inc. |
High power insulated gate bipolar transistors
|
|
US8835987B2
(en)
*
|
2007-02-27 |
2014-09-16 |
Cree, Inc. |
Insulated gate bipolar transistors including current suppressing layers
|
|
US9640609B2
(en)
*
|
2008-02-26 |
2017-05-02 |
Cree, Inc. |
Double guard ring edge termination for silicon carbide devices
|
|
US8232558B2
(en)
|
2008-05-21 |
2012-07-31 |
Cree, Inc. |
Junction barrier Schottky diodes with current surge capability
|
|
US8097919B2
(en)
*
|
2008-08-11 |
2012-01-17 |
Cree, Inc. |
Mesa termination structures for power semiconductor devices including mesa step buffers
|
|
US8497552B2
(en)
|
2008-12-01 |
2013-07-30 |
Cree, Inc. |
Semiconductor devices with current shifting regions and related methods
|
|
US8294507B2
(en)
|
2009-05-08 |
2012-10-23 |
Cree, Inc. |
Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
|
|
US8637386B2
(en)
*
|
2009-05-12 |
2014-01-28 |
Cree, Inc. |
Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
|
|
US8193848B2
(en)
|
2009-06-02 |
2012-06-05 |
Cree, Inc. |
Power switching devices having controllable surge current capabilities
|
|
US8629509B2
(en)
*
|
2009-06-02 |
2014-01-14 |
Cree, Inc. |
High voltage insulated gate bipolar transistors with minority carrier diverter
|
|
US8541787B2
(en)
*
|
2009-07-15 |
2013-09-24 |
Cree, Inc. |
High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
|
|
US8354690B2
(en)
|
2009-08-31 |
2013-01-15 |
Cree, Inc. |
Solid-state pinch off thyristor circuits
|
|
US20110084332A1
(en)
*
|
2009-10-08 |
2011-04-14 |
Vishay General Semiconductor, Llc. |
Trench termination structure
|
|
US9117739B2
(en)
|
2010-03-08 |
2015-08-25 |
Cree, Inc. |
Semiconductor devices with heterojunction barrier regions and methods of fabricating same
|
|
SE537101C2
(sv)
|
2010-03-30 |
2015-01-07 |
Fairchild Semiconductor |
Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent
|
|
US8415671B2
(en)
|
2010-04-16 |
2013-04-09 |
Cree, Inc. |
Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
|
|
US8552435B2
(en)
*
|
2010-07-21 |
2013-10-08 |
Cree, Inc. |
Electronic device structure including a buffer layer on a base layer
|
|
US8809904B2
(en)
*
|
2010-07-26 |
2014-08-19 |
Cree, Inc. |
Electronic device structure with a semiconductor ledge layer for surface passivation
|
|
US8803277B2
(en)
|
2011-02-10 |
2014-08-12 |
Cree, Inc. |
Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
|
|
US9318623B2
(en)
*
|
2011-04-05 |
2016-04-19 |
Cree, Inc. |
Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
|
|
US9029945B2
(en)
|
2011-05-06 |
2015-05-12 |
Cree, Inc. |
Field effect transistor devices with low source resistance
|
|
US9142662B2
(en)
|
2011-05-06 |
2015-09-22 |
Cree, Inc. |
Field effect transistor devices with low source resistance
|
|
US9349797B2
(en)
|
2011-05-16 |
2016-05-24 |
Cree, Inc. |
SiC devices with high blocking voltage terminated by a negative bevel
|
|
US9337268B2
(en)
|
2011-05-16 |
2016-05-10 |
Cree, Inc. |
SiC devices with high blocking voltage terminated by a negative bevel
|
|
CN102244003A
(zh)
*
|
2011-06-20 |
2011-11-16 |
中国科学院微电子研究所 |
一种InP HBT器件侧墙的制备方法
|
|
WO2013036370A1
(en)
|
2011-09-11 |
2013-03-14 |
Cree, Inc. |
High current density power module comprising transistors with improved layout
|
|
US9373617B2
(en)
|
2011-09-11 |
2016-06-21 |
Cree, Inc. |
High current, low switching loss SiC power module
|
|
US8664665B2
(en)
|
2011-09-11 |
2014-03-04 |
Cree, Inc. |
Schottky diode employing recesses for elements of junction barrier array
|
|
US8680587B2
(en)
|
2011-09-11 |
2014-03-25 |
Cree, Inc. |
Schottky diode
|
|
US8618582B2
(en)
|
2011-09-11 |
2013-12-31 |
Cree, Inc. |
Edge termination structure employing recesses for edge termination elements
|
|
US9640617B2
(en)
|
2011-09-11 |
2017-05-02 |
Cree, Inc. |
High performance power module
|
|
WO2013107508A1
(en)
|
2012-01-18 |
2013-07-25 |
Fairchild Semiconductor Corporation |
Bipolar junction transistor with spacer layer and method of manufacturing the same
|
|
CN103378138B
(zh)
*
|
2012-04-18 |
2016-12-14 |
朱恩均 |
双极晶体管及其制作方法
|
|
US9425265B2
(en)
|
2013-08-16 |
2016-08-23 |
Cree, Inc. |
Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
|
|
CN105957886B
(zh)
*
|
2016-06-28 |
2019-05-14 |
中国科学院微电子研究所 |
一种碳化硅双极结型晶体管
|
|
CN105977287B
(zh)
*
|
2016-07-25 |
2018-11-09 |
电子科技大学 |
一种碳化硅双极结型晶体管
|
|
CN107482057B
(zh)
*
|
2017-06-29 |
2019-04-09 |
厦门市三安集成电路有限公司 |
多重外延层的共射共基晶体管
|
|
JP6740986B2
(ja)
*
|
2017-08-31 |
2020-08-19 |
株式会社デンソー |
炭化珪素半導体装置およびその製造方法
|
|
US10573516B2
(en)
*
|
2017-12-06 |
2020-02-25 |
QROMIS, Inc. |
Methods for integrated devices on an engineered substrate
|
|
JP2020184580A
(ja)
*
|
2019-05-08 |
2020-11-12 |
株式会社村田製作所 |
半導体装置
|
|
CN112768438B
(zh)
*
|
2019-11-05 |
2022-07-15 |
深圳第三代半导体研究院 |
一种压接式功率模块及其制备方法
|
|
CN113809071B
(zh)
*
|
2021-07-26 |
2024-03-29 |
浙江芯国半导体有限公司 |
包含肖特基二极管的电路及相关应用
|
|
CN115172471A
(zh)
*
|
2022-06-28 |
2022-10-11 |
东莞市中镓半导体科技有限公司 |
高耐压垂直型二极管及其制备方法
|