CN101855726B - 具有台面结构及包含台面台阶的缓冲层的功率半导体器件 - Google Patents

具有台面结构及包含台面台阶的缓冲层的功率半导体器件 Download PDF

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Publication number
CN101855726B
CN101855726B CN200880115194.2A CN200880115194A CN101855726B CN 101855726 B CN101855726 B CN 101855726B CN 200880115194 A CN200880115194 A CN 200880115194A CN 101855726 B CN101855726 B CN 101855726B
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layer
mesa
emitter
conductivity type
base
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Chinese (zh)
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CN101855726A (zh
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张清纯
A·K·阿加沃尔
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Wofu Semiconductor Co ltd
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Cree Research Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H10D18/031—Manufacture or treatment of lateral or planar thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes

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  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
CN200880115194.2A 2007-11-09 2008-09-08 具有台面结构及包含台面台阶的缓冲层的功率半导体器件 Active CN101855726B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98669407P 2007-11-09 2007-11-09
US60/986,694 2007-11-09
PCT/US2008/010538 WO2009061340A1 (en) 2007-11-09 2008-09-08 Power semiconductor devices with mesa structures and buffer layers including mesa steps

Publications (2)

Publication Number Publication Date
CN101855726A CN101855726A (zh) 2010-10-06
CN101855726B true CN101855726B (zh) 2015-09-16

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CN200880115194.2A Active CN101855726B (zh) 2007-11-09 2008-09-08 具有台面结构及包含台面台阶的缓冲层的功率半导体器件

Country Status (6)

Country Link
US (1) US7838377B2 (enExample)
EP (1) EP2208230B1 (enExample)
JP (1) JP5372002B2 (enExample)
KR (1) KR101494935B1 (enExample)
CN (1) CN101855726B (enExample)
WO (1) WO2009061340A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) * 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
EP2631951B1 (en) 2006-08-17 2017-10-11 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9640609B2 (en) * 2008-02-26 2017-05-02 Cree, Inc. Double guard ring edge termination for silicon carbide devices
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8097919B2 (en) * 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
US8497552B2 (en) 2008-12-01 2013-07-30 Cree, Inc. Semiconductor devices with current shifting regions and related methods
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8637386B2 (en) * 2009-05-12 2014-01-28 Cree, Inc. Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US20110084332A1 (en) * 2009-10-08 2011-04-14 Vishay General Semiconductor, Llc. Trench termination structure
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
SE537101C2 (sv) 2010-03-30 2015-01-07 Fairchild Semiconductor Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8552435B2 (en) * 2010-07-21 2013-10-08 Cree, Inc. Electronic device structure including a buffer layer on a base layer
US8809904B2 (en) * 2010-07-26 2014-08-19 Cree, Inc. Electronic device structure with a semiconductor ledge layer for surface passivation
US8803277B2 (en) 2011-02-10 2014-08-12 Cree, Inc. Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
US9318623B2 (en) * 2011-04-05 2016-04-19 Cree, Inc. Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9349797B2 (en) 2011-05-16 2016-05-24 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
US9337268B2 (en) 2011-05-16 2016-05-10 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
CN102244003A (zh) * 2011-06-20 2011-11-16 中国科学院微电子研究所 一种InP HBT器件侧墙的制备方法
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
WO2013107508A1 (en) 2012-01-18 2013-07-25 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
CN103378138B (zh) * 2012-04-18 2016-12-14 朱恩均 双极晶体管及其制作方法
US9425265B2 (en) 2013-08-16 2016-08-23 Cree, Inc. Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
CN105957886B (zh) * 2016-06-28 2019-05-14 中国科学院微电子研究所 一种碳化硅双极结型晶体管
CN105977287B (zh) * 2016-07-25 2018-11-09 电子科技大学 一种碳化硅双极结型晶体管
CN107482057B (zh) * 2017-06-29 2019-04-09 厦门市三安集成电路有限公司 多重外延层的共射共基晶体管
JP6740986B2 (ja) * 2017-08-31 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US10573516B2 (en) * 2017-12-06 2020-02-25 QROMIS, Inc. Methods for integrated devices on an engineered substrate
JP2020184580A (ja) * 2019-05-08 2020-11-12 株式会社村田製作所 半導体装置
CN112768438B (zh) * 2019-11-05 2022-07-15 深圳第三代半导体研究院 一种压接式功率模块及其制备方法
CN113809071B (zh) * 2021-07-26 2024-03-29 浙江芯国半导体有限公司 包含肖特基二极管的电路及相关应用
CN115172471A (zh) * 2022-06-28 2022-10-11 东莞市中镓半导体科技有限公司 高耐压垂直型二极管及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927772A (en) 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
JPH03225870A (ja) * 1990-01-31 1991-10-04 Toshiba Corp ヘテロ接合バイポーラトランジスタの製造方法
JPH0492434A (ja) * 1990-08-08 1992-03-25 Sumitomo Electric Ind Ltd ヘテロ接合バイポーラトランジスタの製造方法
TW286435B (enExample) 1994-07-27 1996-09-21 Siemens Ag
US5967795A (en) * 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge
JP3225870B2 (ja) 1996-12-05 2001-11-05 トヨタ車体株式会社 ルーフスポイラの取付構造
SE9700156D0 (sv) 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode
EP1062700A1 (de) 1999-01-12 2000-12-27 EUPEC Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Leistungshalbleiterbauelement mit mesa-randabschluss
JP2001035857A (ja) * 1999-07-21 2001-02-09 Nec Corp 化合物ヘテロバイポーラトランジスタおよびその製造方法
DE102004045768B4 (de) * 2004-09-21 2007-01-04 Infineon Technologies Ag Verfahren zur Herstellung eines Randabschlusses eines Halbleiterbauelements
JP4777699B2 (ja) 2005-06-13 2011-09-21 本田技研工業株式会社 バイポーラ型半導体装置およびその製造方法
US7304334B2 (en) * 2005-09-16 2007-12-04 Cree, Inc. Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
JP2007103784A (ja) * 2005-10-06 2007-04-19 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ
US7345310B2 (en) * 2005-12-22 2008-03-18 Cree, Inc. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
JP2007287782A (ja) * 2006-04-13 2007-11-01 Hitachi Ltd メサ型バイポーラトランジスタ

Also Published As

Publication number Publication date
WO2009061340A1 (en) 2009-05-14
CN101855726A (zh) 2010-10-06
US20090121319A1 (en) 2009-05-14
KR20100085971A (ko) 2010-07-29
JP5372002B2 (ja) 2013-12-18
EP2208230B1 (en) 2015-10-21
EP2208230A1 (en) 2010-07-21
JP2011503871A (ja) 2011-01-27
US7838377B2 (en) 2010-11-23
KR101494935B1 (ko) 2015-02-23

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Address after: North Carolina USA

Patentee after: Wofu Semiconductor Co.,Ltd.

Address before: North Carolina USA

Patentee before: CREE, Inc.