JP2008227495A5 - - Google Patents
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- Publication number
- JP2008227495A5 JP2008227495A5 JP2008059321A JP2008059321A JP2008227495A5 JP 2008227495 A5 JP2008227495 A5 JP 2008227495A5 JP 2008059321 A JP2008059321 A JP 2008059321A JP 2008059321 A JP2008059321 A JP 2008059321A JP 2008227495 A5 JP2008227495 A5 JP 2008227495A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- titanium
- disposed adjacent
- disposed
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 210000000746 body region Anatomy 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/684,261 US7847315B2 (en) | 2007-03-09 | 2007-03-09 | High efficiency rectifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008227495A JP2008227495A (ja) | 2008-09-25 |
| JP2008227495A5 true JP2008227495A5 (enExample) | 2011-04-21 |
Family
ID=39740792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008059321A Pending JP2008227495A (ja) | 2007-03-09 | 2008-03-10 | 高効率整流器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7847315B2 (enExample) |
| EP (1) | EP2051291A3 (enExample) |
| JP (1) | JP2008227495A (enExample) |
| CN (1) | CN101271926B (enExample) |
| TW (1) | TWI442564B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8435873B2 (en) | 2006-06-08 | 2013-05-07 | Texas Instruments Incorporated | Unguarded Schottky barrier diodes with dielectric underetch at silicide interface |
| TWI381455B (zh) * | 2008-04-22 | 2013-01-01 | Pfc Device Co | 金氧半ｐ－ｎ接面二極體結構及其製作方法 |
| US8518811B2 (en) | 2011-04-08 | 2013-08-27 | Infineon Technologies Ag | Schottky diodes having metal gate electrodes and methods of formation thereof |
| US9029874B2 (en) | 2012-09-13 | 2015-05-12 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer |
| WO2014168430A1 (ko) * | 2013-04-10 | 2014-10-16 | 주식회사 실리콘웍스 | 정류 회로의 제조 방법 |
| JP2015041644A (ja) * | 2013-08-20 | 2015-03-02 | 富士電機株式会社 | Ｍｏｓ型半導体装置の製造方法 |
| WO2015046791A1 (ko) * | 2013-09-26 | 2015-04-02 | 주식회사 실리콘웍스 | 반도체 정류 디바이스 및 그의 제조 방법 |
| CN104392899A (zh) * | 2014-10-08 | 2015-03-04 | 程德明 | 整流单晶硅片免喷砂扩散镀镍工艺 |
| DE102014018382B4 (de) * | 2014-12-15 | 2018-07-26 | Forschungszentrum Jülich GmbH | Tunnel-Feldeffekttransistor sowie Verfahren zu dessen Herstellung |
| TWI703736B (zh) * | 2018-10-11 | 2020-09-01 | 朋程科技股份有限公司 | 車用整流裝置、整流器、發電裝置以及動力系統 |
| US11508808B2 (en) * | 2018-10-11 | 2022-11-22 | Actron Technology Corporation | Rectifier device, rectifier, generator device, and powertrain for vehicle |
| CN109585572A (zh) * | 2018-12-29 | 2019-04-05 | 矽力杰半导体技术(杭州)有限公司 | 半导体器件及其制造方法 |
| JP7189848B2 (ja) * | 2019-08-07 | 2022-12-14 | 株式会社東芝 | 半導体装置およびその製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1573309A (en) * | 1976-03-24 | 1980-08-20 | Mullard Ltd | Semiconductor devices and their manufacture |
| US4692348A (en) * | 1984-06-21 | 1987-09-08 | International Business Machines Corporation | Low temperature shallow doping technique |
| JPH0291974A (ja) * | 1988-09-29 | 1990-03-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
| JPH04369272A (ja) * | 1991-06-18 | 1992-12-22 | Fuji Electric Co Ltd | 複合化ダイオード |
| US5182222A (en) * | 1991-06-26 | 1993-01-26 | Texas Instruments Incorporated | Process for manufacturing a DMOS transistor |
| JP2773474B2 (ja) * | 1991-08-06 | 1998-07-09 | 日本電気株式会社 | 半導体装置 |
| JP3197054B2 (ja) * | 1992-03-25 | 2001-08-13 | 新電元工業株式会社 | 絶縁ゲ−ト型電界効果トランジスタとその製造方法 |
| JPH06310725A (ja) * | 1993-04-21 | 1994-11-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP3673334B2 (ja) * | 1995-07-27 | 2005-07-20 | オリジン電気株式会社 | 半導体ダイオード |
| US5818084A (en) | 1996-05-15 | 1998-10-06 | Siliconix Incorporated | Pseudo-Schottky diode |
| JP3375274B2 (ja) * | 1997-11-20 | 2003-02-10 | オリジン電気株式会社 | Ｍｏｓ制御デバイス |
| DE10217610B4 (de) * | 2002-04-19 | 2005-11-03 | Infineon Technologies Ag | Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren |
| US6979861B2 (en) | 2002-05-30 | 2005-12-27 | Apd Semiconductor, Inc. | Power device having reduced reverse bias leakage current |
| US7417266B1 (en) * | 2004-06-10 | 2008-08-26 | Qspeed Semiconductor Inc. | MOSFET having a JFET embedded as a body diode |
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2007
- 2007-03-09 US US11/684,261 patent/US7847315B2/en active Active
-
2008
- 2008-01-10 EP EP08000340A patent/EP2051291A3/en not_active Withdrawn
- 2008-03-07 TW TW097107982A patent/TWI442564B/zh active
- 2008-03-10 JP JP2008059321A patent/JP2008227495A/ja active Pending
- 2008-03-10 CN CN200810086033.7A patent/CN101271926B/zh active Active