CN101271926B - 高效整流器 - Google Patents

高效整流器 Download PDF

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Publication number
CN101271926B
CN101271926B CN200810086033.7A CN200810086033A CN101271926B CN 101271926 B CN101271926 B CN 101271926B CN 200810086033 A CN200810086033 A CN 200810086033A CN 101271926 B CN101271926 B CN 101271926B
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boron
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Chinese (zh)
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CN101271926A (zh
Inventor
R·J·哈莫斯基
Z·陈
J·M-F·洪
J·D·V·程
C·D·哈鲁斯卡
T·伊斯特曼
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Shanghai Kaihong Sci & Tech Electronic Co Ltd
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DIODE CONSTRUCTION TECHNOLOGY CO LTD
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/021—Manufacture or treatment of gated diodes, e.g. field-controlled diodes [FCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

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  • Electrodes Of Semiconductors (AREA)
CN200810086033.7A 2007-03-09 2008-03-10 高效整流器 Active CN101271926B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/684,261 2007-03-09
US11/684,261 US7847315B2 (en) 2007-03-09 2007-03-09 High efficiency rectifier

Publications (2)

Publication Number Publication Date
CN101271926A CN101271926A (zh) 2008-09-24
CN101271926B true CN101271926B (zh) 2013-04-17

Family

ID=39740792

Family Applications (1)

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CN200810086033.7A Active CN101271926B (zh) 2007-03-09 2008-03-10 高效整流器

Country Status (5)

Country Link
US (1) US7847315B2 (enExample)
EP (1) EP2051291A3 (enExample)
JP (1) JP2008227495A (enExample)
CN (1) CN101271926B (enExample)
TW (1) TWI442564B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435873B2 (en) 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
TWI381455B (zh) * 2008-04-22 2013-01-01 Pfc Device Co 金氧半ｐ－ｎ接面二極體結構及其製作方法
US8518811B2 (en) 2011-04-08 2013-08-27 Infineon Technologies Ag Schottky diodes having metal gate electrodes and methods of formation thereof
US9029874B2 (en) 2012-09-13 2015-05-12 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer
WO2014168430A1 (ko) * 2013-04-10 2014-10-16 주식회사 실리콘웍스 정류 회로의 제조 방법
JP2015041644A (ja) * 2013-08-20 2015-03-02 富士電機株式会社 Ｍｏｓ型半導体装置の製造方法
WO2015046791A1 (ko) * 2013-09-26 2015-04-02 주식회사 실리콘웍스 반도체 정류 디바이스 및 그의 제조 방법
CN104392899A (zh) * 2014-10-08 2015-03-04 程德明 整流单晶硅片免喷砂扩散镀镍工艺
DE102014018382B4 (de) * 2014-12-15 2018-07-26 Forschungszentrum Jülich GmbH Tunnel-Feldeffekttransistor sowie Verfahren zu dessen Herstellung
TWI703736B (zh) * 2018-10-11 2020-09-01 朋程科技股份有限公司 車用整流裝置、整流器、發電裝置以及動力系統
US11508808B2 (en) * 2018-10-11 2022-11-22 Actron Technology Corporation Rectifier device, rectifier, generator device, and powertrain for vehicle
CN109585572A (zh) * 2018-12-29 2019-04-05 矽力杰半导体技术(杭州)有限公司 半导体器件及其制造方法
JP7189848B2 (ja) * 2019-08-07 2022-12-14 株式会社東芝 半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182222A (en) * 1991-06-26 1993-01-26 Texas Instruments Incorporated Process for manufacturing a DMOS transistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
US4692348A (en) * 1984-06-21 1987-09-08 International Business Machines Corporation Low temperature shallow doping technique
JPH0291974A (ja) * 1988-09-29 1990-03-30 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPH04369272A (ja) * 1991-06-18 1992-12-22 Fuji Electric Co Ltd 複合化ダイオード
JP2773474B2 (ja) * 1991-08-06 1998-07-09 日本電気株式会社 半導体装置
JP3197054B2 (ja) * 1992-03-25 2001-08-13 新電元工業株式会社 絶縁ゲ−ト型電界効果トランジスタとその製造方法
JPH06310725A (ja) * 1993-04-21 1994-11-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3673334B2 (ja) * 1995-07-27 2005-07-20 オリジン電気株式会社 半導体ダイオード
US5818084A (en) 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
JP3375274B2 (ja) * 1997-11-20 2003-02-10 オリジン電気株式会社 Ｍｏｓ制御デバイス
DE10217610B4 (de) * 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
US6979861B2 (en) 2002-05-30 2005-12-27 Apd Semiconductor, Inc. Power device having reduced reverse bias leakage current
US7417266B1 (en) * 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182222A (en) * 1991-06-26 1993-01-26 Texas Instruments Incorporated Process for manufacturing a DMOS transistor

Also Published As

Publication number Publication date
TW200901462A (en) 2009-01-01
CN101271926A (zh) 2008-09-24
US7847315B2 (en) 2010-12-07
US20080217721A1 (en) 2008-09-11
TWI442564B (zh) 2014-06-21
EP2051291A2 (en) 2009-04-22
JP2008227495A (ja) 2008-09-25
EP2051291A3 (en) 2011-06-29

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Owner name: SHANGHAI KAIHONG SCI. + TECH. ELECTRONIC CO., LTD.

Free format text: FORMER OWNER: DIODE CONSTRUCTION TECHNOLOGY CO.,LTD.

Effective date: 20130906

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Patentee after: Shanghai Kaihong Sci. & Tech. Electronic Co., Ltd.

Address before: American Missouri

Patentee before: Diode Construction Technology Co.,ltd.

CB03 Change of inventor or designer information
CB03 Change of inventor or designer information

Inventor after: R.J. Hamoski

Inventor after: Chen Zerui

Inventor after: J.M-F.Hong

Inventor after: J.D.V.Cheng

Inventor after: Hruska Christopher D.

Inventor after: Eastman Timothy

Inventor before: R.J. Hamoski

Inventor before: Z.Chen

Inventor before: J.M-F.Hong

Inventor before: J.D.V.Cheng

Inventor before: Hruska Christopher D.

Inventor before: Eastman Timothy