JP2008227495A - 高効率整流器 - Google Patents

高効率整流器 Download PDF

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Publication number
JP2008227495A
JP2008227495A JP2008059321A JP2008059321A JP2008227495A JP 2008227495 A JP2008227495 A JP 2008227495A JP 2008059321 A JP2008059321 A JP 2008059321A JP 2008059321 A JP2008059321 A JP 2008059321A JP 2008227495 A JP2008227495 A JP 2008227495A
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Japan
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Pending
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JP2008059321A
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English (en)
Japanese (ja)
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JP2008227495A5 (enExample
Inventor
Roman J Hamerski
ジェイ ハマースキー ローマン
Zerui Chen
チェン ゼルイ
James Man-Fai Hong
マン ファイ ホン ジェイムズ
Johnny Duc Van Chiem
デューク ヴァン キーム ジョニー
Christopher D Hruska
ディー フルスカ クリストファー
Timothy Eastman
イーストマン ティモシー
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Diodes Fabtech Inc
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Diodes Fabtech Inc
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39740792&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2008227495(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Diodes Fabtech Inc filed Critical Diodes Fabtech Inc
Publication of JP2008227495A publication Critical patent/JP2008227495A/ja
Publication of JP2008227495A5 publication Critical patent/JP2008227495A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/021—Manufacture or treatment of gated diodes, e.g. field-controlled diodes [FCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

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  • Electrodes Of Semiconductors (AREA)
JP2008059321A 2007-03-09 2008-03-10 高効率整流器 Pending JP2008227495A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/684,261 US7847315B2 (en) 2007-03-09 2007-03-09 High efficiency rectifier

Publications (2)

Publication Number Publication Date
JP2008227495A true JP2008227495A (ja) 2008-09-25
JP2008227495A5 JP2008227495A5 (enExample) 2011-04-21

Family

ID=39740792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008059321A Pending JP2008227495A (ja) 2007-03-09 2008-03-10 高効率整流器

Country Status (5)

Country Link
US (1) US7847315B2 (enExample)
EP (1) EP2051291A3 (enExample)
JP (1) JP2008227495A (enExample)
CN (1) CN101271926B (enExample)
TW (1) TWI442564B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018504775A (ja) * 2014-12-15 2018-02-15 フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング トンネル電界効果トランジスタ及びその製造方法
JP2020061547A (ja) * 2018-10-11 2020-04-16 朋程科技股▲ふん▼有限公司 車両用整流装置、整流器、発電装置及びパワートレイン

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435873B2 (en) 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
TWI381455B (zh) * 2008-04-22 2013-01-01 Pfc Device Co 金氧半ｐ－ｎ接面二極體結構及其製作方法
US8518811B2 (en) 2011-04-08 2013-08-27 Infineon Technologies Ag Schottky diodes having metal gate electrodes and methods of formation thereof
US9029874B2 (en) 2012-09-13 2015-05-12 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer
WO2014168430A1 (ko) * 2013-04-10 2014-10-16 주식회사 실리콘웍스 정류 회로의 제조 방법
JP2015041644A (ja) * 2013-08-20 2015-03-02 富士電機株式会社 Ｍｏｓ型半導体装置の製造方法
WO2015046791A1 (ko) * 2013-09-26 2015-04-02 주식회사 실리콘웍스 반도체 정류 디바이스 및 그의 제조 방법
CN104392899A (zh) * 2014-10-08 2015-03-04 程德明 整流单晶硅片免喷砂扩散镀镍工艺
TWI703736B (zh) * 2018-10-11 2020-09-01 朋程科技股份有限公司 車用整流裝置、整流器、發電裝置以及動力系統
CN109585572A (zh) * 2018-12-29 2019-04-05 矽力杰半导体技术(杭州)有限公司 半导体器件及其制造方法
JP7189848B2 (ja) * 2019-08-07 2022-12-14 株式会社東芝 半導体装置およびその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0291974A (ja) * 1988-09-29 1990-03-30 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPH04369272A (ja) * 1991-06-18 1992-12-22 Fuji Electric Co Ltd 複合化ダイオード
JPH05275705A (ja) * 1992-03-25 1993-10-22 Shindengen Electric Mfg Co Ltd 絶縁ゲ−ト型電界効果トランジスタとその製造方法
JPH06310725A (ja) * 1993-04-21 1994-11-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0997912A (ja) * 1995-07-27 1997-04-08 Origin Electric Co Ltd 半導体ダイオード
JPH11154744A (ja) * 1997-11-20 1999-06-08 Origin Electric Co Ltd Ｍｏｓ制御デバイス

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
US4692348A (en) * 1984-06-21 1987-09-08 International Business Machines Corporation Low temperature shallow doping technique
US5182222A (en) * 1991-06-26 1993-01-26 Texas Instruments Incorporated Process for manufacturing a DMOS transistor
JP2773474B2 (ja) * 1991-08-06 1998-07-09 日本電気株式会社 半導体装置
US5818084A (en) 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
DE10217610B4 (de) * 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
US6979861B2 (en) 2002-05-30 2005-12-27 Apd Semiconductor, Inc. Power device having reduced reverse bias leakage current
US7417266B1 (en) * 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0291974A (ja) * 1988-09-29 1990-03-30 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPH04369272A (ja) * 1991-06-18 1992-12-22 Fuji Electric Co Ltd 複合化ダイオード
JPH05275705A (ja) * 1992-03-25 1993-10-22 Shindengen Electric Mfg Co Ltd 絶縁ゲ−ト型電界効果トランジスタとその製造方法
JPH06310725A (ja) * 1993-04-21 1994-11-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0997912A (ja) * 1995-07-27 1997-04-08 Origin Electric Co Ltd 半導体ダイオード
JPH11154744A (ja) * 1997-11-20 1999-06-08 Origin Electric Co Ltd Ｍｏｓ制御デバイス

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018504775A (ja) * 2014-12-15 2018-02-15 フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング トンネル電界効果トランジスタ及びその製造方法
JP2020061547A (ja) * 2018-10-11 2020-04-16 朋程科技股▲ふん▼有限公司 車両用整流装置、整流器、発電装置及びパワートレイン
US11508808B2 (en) 2018-10-11 2022-11-22 Actron Technology Corporation Rectifier device, rectifier, generator device, and powertrain for vehicle

Also Published As

Publication number Publication date
TW200901462A (en) 2009-01-01
CN101271926A (zh) 2008-09-24
US7847315B2 (en) 2010-12-07
US20080217721A1 (en) 2008-09-11
TWI442564B (zh) 2014-06-21
CN101271926B (zh) 2013-04-17
EP2051291A2 (en) 2009-04-22
EP2051291A3 (en) 2011-06-29

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