JP2007146294A - スパッタリングチャンバのためのターゲット及びプロセスキット部品 - Google Patents
スパッタリングチャンバのためのターゲット及びプロセスキット部品 Download PDFInfo
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title abstract description 55
- 230000008569 process Effects 0.000 title abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 238000000151 deposition Methods 0.000 claims abstract description 49
- 230000008021 deposition Effects 0.000 claims abstract description 44
- 238000005477 sputtering target Methods 0.000 claims abstract description 41
- 230000005291 magnetic effect Effects 0.000 claims description 30
- 230000002093 peripheral effect Effects 0.000 claims description 30
- 239000010936 titanium Substances 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 claims description 14
- 239000011324 bead Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 7
- 239000000788 chromium alloy Substances 0.000 claims description 7
- 239000013529 heat transfer fluid Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 22
- 239000007789 gas Substances 0.000 description 45
- 230000003628 erosive effect Effects 0.000 description 20
- 238000012545 processing Methods 0.000 description 13
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 8
- 239000007921 spray Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000005292 diamagnetic effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002907 paramagnetic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】スパッタリングチャンバは、熱伝導率が少なくとも約200W/mKで、電気抵抗率が約2〜5μΩcmのバッキングプレート141及びスパッタリングプレート137で構成されるスパッタリングターゲット136を有する。バッキングプレートは、溝を有する。スパッタリングプレート137は、平面を有する円柱状メサと、この円柱状メサを取り巻く環状の傾斜リムとを備えている。1つの変形例において、バッキングプレートは、高い熱伝導率と、低い電気抵抗率とを有する材料で構成される。別の変形例において、バッキングプレートは、単一の溝又は複数の溝をもつ背面を含む。スパッタリングチャンバ用のプロセスキットは、スパッタリングチャンバ内で基板支持体の周りに配置するための堆積リング、カバーリング及びシールドアッセンブリを備えている。
【選択図】図1
Description
Claims (35)
- スパッタリングチャンバのためのスパッタリングターゲットにおいて、
(a)熱伝導率が少なくとも約200W/mKで、電気抵抗率が約2から約5μΩcmのバッキングプレートと、
(b)上記バッキングプレートに装着されたスパッタリングプレートと、
を備え、該スパッタリングプレートは、
(i)平面を有する円柱状メサ、及び
(ii)上記円柱状メサを取り巻く環状の傾斜リム
を含むものであるスパッタリングターゲット。 - 上記バッキングプレートは、次の特性、
(i)約220から約400W/mKの熱伝導率、又は
(ii)約2.2から約4.1μΩcmの電気抵抗率、
の少なくとも1つを含む請求項1に記載のターゲット。 - 上記バッキングプレートは、次の特性、
(i)銅−クロム合金、又は
(ii)C18000又はC18200で構成される銅−クロム合金、
の少なくとも1つを含む請求項1に記載のターゲット。 - 上記バッキングプレートは、次の特性、
(i)環状溝をもつ背面、
(ii)半径方向溝をもつ背面、及び
(iii)複数の溝をもつ背面、
の少なくとも1つを含む請求項1に記載のターゲット。 - 上記環状リムは、上記円柱状メサの平面に対して少なくとも約8°の角度で傾斜される、請求項1に記載のターゲット。
- 熱伝達流体を保持できるハウジングを含むと共に、該ハウジング内に複数の回転可能な磁石を含む熱交換器を更に備えた、請求項1に記載のターゲット。
- 上記スパッタリングプレートはチタンで構成される、請求項1に記載のターゲット。
- 請求項1に記載のスパッタリングターゲットを備えたスパッタリングチャンバにおいて、
(1)請求項1に記載のスパッタリングターゲットが装着され、更に、
(2)上記スパッタリングターゲットに対向した基板支持体と、
(3)上記スパッタリングチャンバにガスを導入するガス分配器と、
(4)上記スパッタリングターゲットをスパッタさせるプラズマを形成するようにガスにエネルギを与えるガスエナジャイザーと、
(5)上記スパッタリングチャンバからガスを排気するガス排気口と、
を備えたスパッタリングチャンバ。 - スパッタリングチャンバのためのスパッタリングターゲットにおいて、
(a)溝をもつ背面を含むバッキングプレートと、
(b)上記バッキングプレートに装着されたスパッタリングプレートと、
を備え、該スパッタリングプレートは、
(i)平面を有する円柱状メサ、及び
(ii)上記円柱状メサを取り巻く環状の傾斜リム
を含むものであるスパッタリングターゲット。 - 上記バッキングプレートは、次の特性、
(i)複数の溝、
(ii)少なくとも約4個の溝、
(iii)同心的な環状溝である溝、及び
(iv)半径方向溝である溝、
の少なくとも1つを含む請求項9に記載のターゲット。 - 上記バッキングプレートは、熱伝導率が少なくとも約200W/mKで、電気抵抗率が約2から約5μΩcmである、請求項9に記載のターゲット。
- 請求項9に記載のスパッタリングターゲットを備えたスパッタリングチャンバにおいて、
(1)請求項13に記載のスパッタリングターゲットが装着され、更に、
(2)上記スパッタリングターゲットに対向した基板支持体と、
(3)上記スパッタリングチャンバにガスを導入するガス分配器と、
(4)上記スパッタリングターゲットをスパッタさせるプラズマを形成するようにガスにエネルギを与えるガスエナジャイザーと、
(5)上記スパッタリングチャンバからガスを排気するガス排気口と、
を備えたスパッタリングチャンバ。 - (a)前面及び溝をもつ背面を含むバッキングプレートと、該バッキングプレートの前面に装着されたスパッタリングプレートとで構成されたスパッタリングターゲットと、
(b)上記スパッタリングターゲットに対向する基板支持体と、
(c)上記ターゲットの上記背面の周りにあって熱伝達流体を保持できるハウジングを含む熱交換器と、
(d)上記バッキングプレートの上記背面の周りに位置された複数の回転可能な磁石を含む磁界発生装置と、
(e)上記スパッタリングチャンバにガスを導入するガス分配器と、
(f)上記スパッタリングターゲットをスパッタさせるプラズマを形成するようにガスにエネルギを与えるガスエナジャイザーと、
(g)上記スパッタリングチャンバからガスを排気するガス排気口と、
を備えたスパッタリングチャンバ。 - 上記磁界発生装置は、次の特性、
(i)磁石が異なる磁束を有する、
(ii)磁石が異なる磁界配向を有する、及び
(iii)磁石が熱交換器のハウジング内にある、
の少なくとも1つを有する複数の回転可能な磁石を備えた、請求項13に記載のチャンバ。 - 上記バッキングプレートは、次の特性、
(i)複数の溝、
(ii)複数の同心的な環状溝、及び
(iii)複数の半径方向溝、
の少なくとも1つを含む請求項13に記載のチャンバ。 - 上記バッキングプレートは、熱伝導率が少なくとも約200W/mKで、電気抵抗率が約2から約5μΩcmである、請求項13に記載のチャンバ。
- (a)前面及び溝をもつ背面を含むバッキングプレートと、該バッキングプレートの前面に装着されたスパッタリングプレートとで構成されたスパッタリングターゲットと、
(b)上記スパッタリングターゲットに対向する基板支持体と、
(c)上記ターゲットの上記背面の周りにあって熱伝達流体を保持できるハウジングを含む熱交換器と、
(d)上記バッキングプレートの上記背面の周りに位置された複数の回転可能な磁石を含む磁界発生装置と、
(e)上記スパッタリングチャンバにガスを導入するガス分配器と、
(f)上記スパッタリングターゲットをスパッタさせるプラズマを形成するようにガスにエネルギを与えるガスエナジャイザーと、
(g)上記スパッタリングチャンバからガスを排気するガス排気口と、
を備えたスパッタリングチャンバ。 - 上記磁界発生装置は、次の特性、
(a)回転可能な磁石が異なる磁束を有すること、
(b)回転可能な磁石が異なる磁界配向を有すること、又は
(c)回転可能な磁石が熱交換器のハウジング内にあること、
の少なくとも1つを有する複数の回転可能な磁石を備えた、請求項17に記載のチャンバ。 - 上記バッキングプレートは、次の特性、
(a)溝が同心的な環状溝であること、又は
(b)溝が半径方向溝であること、
の少なくとも1つを有する複数の溝を備えた、請求項17に記載のチャンバ。 - スパッタリングチャンバ内で基板支持体の周りに配置するための堆積リングであって、上記基板支持体は、平面を有する基板受け入れ面と、基板のオーバーハングエッジの手前で終わる周囲壁とを含むものである堆積リングにおいて、
(a)上記支持体の周囲壁を取り巻く露出面を有する環状バンドを備え、上記露出面は、その平均粗面度が150±50マイクロインチであり、上記環状バンドは、
(i)上記環状バンドから横方向に延びる内側リップであって、上記支持体の周囲壁に実質的に平行で、且つ上記基板のオーバーハングエッジの下で終わる内側リップと、
(ii)上記基板支持体の上記受け入れ面の平面に実質的に平行な持ち上がった峰と、
(iii)上記内側リップと上記持ち上がった峰との間にあって、上記基板のオーバーハングエッジの下に少なくとも部分的に延びる内側開放チャンネルと、
(iv)上記持ち上がった峰の半径方向外方にある棚と、
を備えた堆積リング。 - 上記環状バンドは酸化アルミニウムで構成される、請求項20に記載のリング。
- 上記酸化アルミニウムは、純度が少なくとも約99.5%である、請求項21に記載のリング。
- 上記環状バンドの露出面は、ビード吹き付けされた面である、請求項20に記載のリング。
- 請求項20に記載の堆積リングと、カバーリングとを備え、上記堆積リングの上記環状バンドの持ち上がった峰と、そこから離間され且つその上に横たわる上記カバーリングの下面とで、狭いギャップが画成され、該ギャップを通るプラズマ種子の移動を妨げるようにしたリングアッセンブリ。
- スパッタリングチャンバ内で基板支持体の周りに配置するためのカバーリングであって、上記基板支持体は、平面を有する基板受け入れ面を含むものであるカバーリングにおいて、
(i)上記基板支持体の周りの面に載せられる足と、上記基板支持体の上記受け入れ面に実質的に平行な露出面であって、平均粗面度が175±75マイクロインチである露出面とを含む環状プレートと、
(ii)上記環状プレートから下方に延びる第1及び第2の円筒壁であって、該第1円筒壁の第1長さが該第2円筒壁の第2長さより少なくとも約10%短いような第1及び第2の円筒壁と、
を備えたカバーリング。 - 上記環状プレートは、ステンレススチールで構成される、請求項25に記載のカバーリング。
- 上記環状プレートの露出面は、ビード吹き付けされた面である、請求項25に記載のカバーリング。
- 請求項25に記載のカバーリングと、堆積リングとを備え、上記カバーリングの足が上記堆積リングの棚に載せられて、上記カバーリングが上記堆積リングを少なくとも部分的に覆うようにしたリングアッセンブリ。
- 上記カバーリングの上記環状プレートと、上記堆積リングの持ち上がった峰とで、狭いギャップが画成され、該ギャップを通るプラズマ種子の移動を妨げるようにした請求項25に記載のリングアッセンブリ。
- スパッタリングチャンバ内で基板支持体の周りに配置するためのリングアッセンブリであって、上記基板支持体は、平面を有する基板受け入れ面と、基板のオーバーハングエッジの手前で終わる周囲壁とを含むものであるリングアッセンブリにおいて、
(a)上記支持体の周囲壁を取り巻く露出面を有する環状バンドを含む堆積リング備え、上記露出面は、その平均粗面度が150±50マイクロインチであり、上記環状バンドは、
(i)上記環状バンドから横方向に延びる内側リップであって、上記支持体の周囲壁に実質的に平行で、且つ上記基板のオーバーハングエッジの下で終わる内側リップと、
(ii)上記基板支持体の上記受け入れ面の平面に実質的に平行な持ち上がった峰と、
(iii)上記内側リップと上記持ち上がった峰との間にあって、上記基板のオーバーハングエッジの下に少なくとも部分的に延びる内側開放チャンネルと、
(iv)上記持ち上がった峰の半径方向外方にある棚と、
を含むものであり、更に、
(b)上記堆積リングを少なくとも部分的に追おうカバーリングを備え、該カバーリングは、
(i)上記基板支持体の周りの面に載せられる足と、上記基板支持体の上記受け入れ面に実質的に平行な露出面であって、平均粗面度が175±75マイクロインチである露出面とを含む環状プレートと、
(ii)上記環状プレートから下方に延びる第1及び第2の円筒壁であって、該第1円筒壁の第1長さが該第2円筒壁の第2長さより少なくとも約10%短いような第1及び第2の円筒壁と、
を含むものであるリングアッセンブリ。 - スパッタリングチャンバ内で基板支持体に対向するスパッタリングターゲットのスパッタリングプレートを包囲して、上記基板支持体及び上記チャンバの側壁へのスパッタリング堆積物の堆積を減少できるシールドアッセンブリにおいて、
(a)上部シールドを備え、該上部シールドは、
(i)支持リップと、
(ii)上記スパッタリングターゲットの上記スパッタリングプレートを包囲するサイズの第1直径をもつ第1円筒面、上記第1直径より小さいサイズの第2直径をもつ第2円筒面、及び該第1面と第2面との間の傾斜面を有する環状バンドと、
を含み、更に、
(b)下部シールドを備え、該下部シールドは、
(i)支持棚と、
(ii)上記上部シールドの下に延びる円筒状外側バンドと、
(iii)上記円筒状外側バンドの底端から半径方向内方に延びるベースプレートと、
(iv)上記ベースプレートに接合され、上記基板支持体を少なくとも部分的に取り巻く円筒状内側バンドと、
を含むものであるシールドアッセンブリ。 - 上記上部シールド及び下部シールドの上記露出面は、平均粗面度が175±75マイクロインチである、請求項31に記載のシールドアッセンブリ。
- 上記環状バンドの上記露出面は、ビード吹き付けされた面である、請求項31に記載のシールドアッセンブリ。
- 上記上部シールド及び下部シールドはアルミニウムで構成される、請求項31に記載のシールドアッセンブリ。
- 上記バッキングプレートは、熱伝導率が少なくとも約200W/mKで、電気抵抗率が約2から約5μΩcmである、請求項17に記載のチャンバ。
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- 2006-11-12 US US11/558,929 patent/US8647484B2/en active Active
- 2006-11-12 US US11/558,928 patent/US8790499B2/en active Active
- 2006-11-12 US US11/558,926 patent/US20070125646A1/en not_active Abandoned
- 2006-11-21 TW TW095143095A patent/TWI368663B/zh active
- 2006-11-21 JP JP2006314614A patent/JP5661983B2/ja active Active
- 2006-11-24 CN CN2011100360728A patent/CN102086509A/zh active Pending
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JP2011225981A (ja) * | 2010-03-31 | 2011-11-10 | Taiheiyo Cement Corp | スパッタリングターゲット |
WO2012057106A1 (ja) * | 2010-10-27 | 2012-05-03 | Jx日鉱日石金属株式会社 | スパッタリングターゲット-バッキングプレート接合体及びその製造方法 |
JP5694360B2 (ja) * | 2010-10-27 | 2015-04-01 | Jx日鉱日石金属株式会社 | スパッタリングターゲット−バッキングプレート接合体及びその製造方法 |
Also Published As
Publication number | Publication date |
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US20070125646A1 (en) | 2007-06-07 |
US8790499B2 (en) | 2014-07-29 |
JP5661983B2 (ja) | 2015-01-28 |
CN1982501A (zh) | 2007-06-20 |
KR101356144B1 (ko) | 2014-02-06 |
KR20070055413A (ko) | 2007-05-30 |
CN102086509A (zh) | 2011-06-08 |
CN1982501B (zh) | 2011-04-06 |
US8647484B2 (en) | 2014-02-11 |
TWI368663B (en) | 2012-07-21 |
US20070170052A1 (en) | 2007-07-26 |
US20070173059A1 (en) | 2007-07-26 |
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