JP5661983B2 - スパッタリングチャンバのためのターゲット及びプロセスキット部品 - Google Patents
スパッタリングチャンバのためのターゲット及びプロセスキット部品 Download PDFInfo
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- JP5661983B2 JP5661983B2 JP2006314614A JP2006314614A JP5661983B2 JP 5661983 B2 JP5661983 B2 JP 5661983B2 JP 2006314614 A JP2006314614 A JP 2006314614A JP 2006314614 A JP2006314614 A JP 2006314614A JP 5661983 B2 JP5661983 B2 JP 5661983B2
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- 238000004544 sputter deposition Methods 0.000 title claims description 109
- 238000000034 method Methods 0.000 title description 55
- 230000008569 process Effects 0.000 title description 53
- 239000000758 substrate Substances 0.000 claims description 71
- 238000005477 sputtering target Methods 0.000 claims description 35
- 230000005291 magnetic effect Effects 0.000 claims description 34
- 239000010936 titanium Substances 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 claims description 14
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 7
- 239000000788 chromium alloy Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000013529 heat transfer fluid Substances 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 45
- 238000000151 deposition Methods 0.000 description 37
- 230000008021 deposition Effects 0.000 description 32
- 230000002093 peripheral effect Effects 0.000 description 24
- 239000000463 material Substances 0.000 description 21
- 230000003628 erosive effect Effects 0.000 description 20
- 238000012545 processing Methods 0.000 description 13
- 239000011324 bead Substances 0.000 description 9
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000007921 spray Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000005292 diamagnetic effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002907 paramagnetic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (15)
- スパッタリングチャンバ内に回転する磁界を発生させる磁界発生装置を有するスパッタリングチャンバのためのスパッタリングターゲットにおいて、
(a)金属製バッキングプレートであって、
(i)内側半径及び外側半径を有し、各々が、前記バッキングプレートの前記内側半径から前記パッキングプレートの前記外側半径まで延びる複数のカーブした溝を持つ背面を持ち、
(ii)熱伝導率が少なくとも200W/mKで、
(iii)電気抵抗率が2から5μΩcmである、
バッキングプレートと、
(b)上記バッキングプレートに装着されたスパッタリングプレートと、
を備え、該スパッタリングプレートは、
(i)スパッタリング面を備える平面を有する円柱状メサ、及び
(ii)上記円柱状メサを取り巻く環状の傾斜リム
を含むものであるスパッタリングターゲット。 - 上記バッキングプレートは、220から400W/mKの熱伝導率を有する請求項1に記載のターゲット。
- 上記バッキングプレートは、次の特性、
(i)銅−クロム合金、及び
(ii)C18000又はC18200で構成される銅−クロム合金、
の1つを含む請求項1に記載のターゲット。 - 上記カーブした溝は、
カーブした半径方向溝である、
請求項1に記載のターゲット。 - 上記環状リムは、上記円柱状メサの平面に対して少なくとも8°の角度で傾斜される、
請求項1に記載のターゲット。 - 熱伝達流体を保持できるハウジングを含むと共に、該ハウジング内に複数の回転可能な磁石を含む熱交換器を更に備えた、請求項1に記載のターゲット。
- 上記スパッタリングプレートはチタンで構成される、請求項1に記載のターゲット。
- 請求項1に記載のスパッタリングターゲットを備えたスパッタリングチャンバにおいて、
(1)請求項1に記載のスパッタリングターゲットが装着され、更に、
(2)上記スパッタリングターゲットに対向した基板支持体と、
(3)上記スパッタリングチャンバにガスを導入するガス分配器と、
(4)上記スパッタリングターゲットをスパッタさせるプラズマを形成するようにガスにエネルギを与えるガスエナジャイザーと、
(5)上記スパッタリングチャンバからガスを排気するガス排気口と、
(6)前記スパッタリングチャンバ内に回転する磁界を発生させる磁界発生装置と、
を備えたスパッタリングチャンバ。 - スパッタリングチャンバのための、前記チャンバ内に回転する磁界を発生させる磁界発生装置スパッタリングターゲットにおいて、
(a)内側半径及び外側半径を有し、各々が、前記内側半径から前記外側半径まで延びる複数のカーブした溝をもつ背面を含む金属性バッキングプレートと、
(b)上記バッキングプレートに装着されたスパッタリングプレートと、
を備え、該スパッタリングプレートは、
(i)スパッタリング面を有する平面を有する円柱状メサ、及び
(ii)上記円柱状メサを取り巻く環状の傾斜リム
を含むものであるスパッタリングターゲット。 - 上記バッキングプレートは、少なくとも4個の溝を含む請求項9に記載のターゲット。
- 上記バッキングプレートは、熱伝導率が少なくとも200W/mKで、電気抵抗率が2から5μΩcmである、請求項9に記載のターゲット。
- 請求項9に記載のスパッタリングターゲットを備えたスパッタリングチャンバにおいて、
(1)請求項9に記載のスパッタリングターゲットが装着され、更に、
(2)上記スパッタリングターゲットに対向した基板支持体と、
(3)上記スパッタリングチャンバにガスを導入するガス分配器と、
(4)上記スパッタリングターゲットをスパッタさせるプラズマを形成するようにガスにエネルギを与えるガスエナジャイザーと、
(5)上記スパッタリングチャンバからガスを排気するガス排気口と、
(6)前記スパッタリングチャンバ内に回転する磁界を発生させる磁界発生装置と、
を備えたスパッタリングチャンバ。 - (a)前面及び、各々がバッキングプレートの内側半径から前記バッキングプレートの外側半径まで延び、バッキングプレートの半径をRとすると0.3Rから0.8Rまで延びる複数のカーブした溝をもつ背面を含む、熱伝導率が少なくとも200W/mKで、電気抵抗率が2から5μΩcmであるバッキングプレートと、該バッキングプレートの前面に装着された、スパッタリング面を備えるスパッタリングプレートとで構成された金属製スパッタリングターゲットと、
(b)上記スパッタリングターゲットに対向する基板支持体と、
(c)上記ターゲットの上記背面の周りにあって熱伝達流体を保持できるハウジングを含む熱交換器と、
(d)上記バッキングプレートの上記背面の周りに位置された、前記スパッタリング面に対して回転する磁界を発生させることが可能な複数の回転可能な磁石を含む磁界発生装置と、
(e)上記スパッタリングチャンバにガスを導入するガス分配器と、
(f)上記スパッタリングターゲットをスパッタさせるプラズマを形成するようにガスにエネルギを与えるガスエナジャイザーと、
(g)上記スパッタリングチャンバからガスを排気するガス排気口と、
を備えたスパッタリングチャンバ。 - 上記磁界発生装置は、磁石が異なる磁束を有する回転可能な磁石を備えた、請求項13に記載のチャンバ。
- 上記溝は、
カーブした半径方向溝である、
請求項13に記載のチャンバ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73965805P | 2005-11-25 | 2005-11-25 | |
US60/739658 | 2005-11-25 | ||
US78837806P | 2006-03-30 | 2006-03-30 | |
US60/788378 | 2006-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007146294A JP2007146294A (ja) | 2007-06-14 |
JP5661983B2 true JP5661983B2 (ja) | 2015-01-28 |
Family
ID=38208042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006314614A Active JP5661983B2 (ja) | 2005-11-25 | 2006-11-21 | スパッタリングチャンバのためのターゲット及びプロセスキット部品 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8790499B2 (ja) |
JP (1) | JP5661983B2 (ja) |
KR (1) | KR101356144B1 (ja) |
CN (2) | CN102086509A (ja) |
TW (1) | TWI368663B (ja) |
Families Citing this family (58)
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2006
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US20070173059A1 (en) | 2007-07-26 |
KR20070055413A (ko) | 2007-05-30 |
KR101356144B1 (ko) | 2014-02-06 |
US20070125646A1 (en) | 2007-06-07 |
US8647484B2 (en) | 2014-02-11 |
TWI368663B (en) | 2012-07-21 |
CN1982501A (zh) | 2007-06-20 |
CN1982501B (zh) | 2011-04-06 |
US8790499B2 (en) | 2014-07-29 |
US20070170052A1 (en) | 2007-07-26 |
JP2007146294A (ja) | 2007-06-14 |
CN102086509A (zh) | 2011-06-08 |
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