JP4959118B2 - スパッタリング装置及びスパッタリング装置用のターゲット - Google Patents
スパッタリング装置及びスパッタリング装置用のターゲット Download PDFInfo
- Publication number
- JP4959118B2 JP4959118B2 JP2004136145A JP2004136145A JP4959118B2 JP 4959118 B2 JP4959118 B2 JP 4959118B2 JP 2004136145 A JP2004136145 A JP 2004136145A JP 2004136145 A JP2004136145 A JP 2004136145A JP 4959118 B2 JP4959118 B2 JP 4959118B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- sputtering apparatus
- processing substrate
- peripheral edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 66
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005477 sputtering target Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 16
- 230000003628 erosive effect Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010891 electric arc Methods 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
(比較例1)
4 カソード組立体
45 磁石組立体
M トンネル状磁束
S 処理基板
T ターゲット
T1 外周縁部
T2 斜面
Claims (3)
- 処理基板に対向配置される所定形状のスパッタリング用ターゲットを備えたスパッタリング装置であって、
ターゲットのスパッタ面側を前とし、このスパッタ面の前方に閉ループの磁束を形成する磁石組立体と、ターゲットの水平方向に沿った2箇所の位置の間で磁石組立体を往復動させる駆動手段と、ターゲットの周囲に配置されるアースシールドとを備えたマグネトロン方式のものにおいて、
前記スパッタ面と周壁面とが交わる部分にその全周に亘って斜面を設け、このターゲットの斜面が前記アースシールドより処理基板側に突出するように設置したことを特徴とするスパッタリング装置。 - 前記スパッタ面と前記斜面とがなす角度を5〜60°の範囲に設定したことを特徴とする請求項1記載のスパッタリング装置。
- 前記ターゲットが、インジウム、スズ及び酸素を含むITOスパッタリング用のターゲ
ットであることを特徴とする請求項1または請求項2記載のスパッタリング装置用のターゲット。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004136145A JP4959118B2 (ja) | 2004-04-30 | 2004-04-30 | スパッタリング装置及びスパッタリング装置用のターゲット |
TW094111373A TWI414621B (zh) | 2004-04-30 | 2005-04-11 | Sputtering target and sputtering method using the target |
DE102005019456A DE102005019456A1 (de) | 2004-04-30 | 2005-04-25 | Target für das Sputtern und ein Sputterverfahren unter Verwendung dieses Targets |
KR1020050035023A KR101108894B1 (ko) | 2004-04-30 | 2005-04-27 | 스퍼터링용 타겟 및 이 타겟을 이용한 스퍼터링 방법 |
CN200510068427.6A CN1693531B (zh) | 2004-04-30 | 2005-04-29 | 溅射靶及使用该靶的溅射方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004136145A JP4959118B2 (ja) | 2004-04-30 | 2004-04-30 | スパッタリング装置及びスパッタリング装置用のターゲット |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005314773A JP2005314773A (ja) | 2005-11-10 |
JP2005314773A5 JP2005314773A5 (ja) | 2007-04-05 |
JP4959118B2 true JP4959118B2 (ja) | 2012-06-20 |
Family
ID=35220135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004136145A Expired - Lifetime JP4959118B2 (ja) | 2004-04-30 | 2004-04-30 | スパッタリング装置及びスパッタリング装置用のターゲット |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4959118B2 (ja) |
KR (1) | KR101108894B1 (ja) |
CN (1) | CN1693531B (ja) |
DE (1) | DE102005019456A1 (ja) |
TW (1) | TWI414621B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8647484B2 (en) * | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
GB0613877D0 (en) * | 2006-07-13 | 2006-08-23 | Teer Coatings Ltd | Coating apparatus and coating for an article |
JP5264231B2 (ja) | 2008-03-21 | 2013-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8992741B2 (en) * | 2008-08-08 | 2015-03-31 | Applied Materials, Inc. | Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target |
JP4537479B2 (ja) * | 2008-11-28 | 2010-09-01 | キヤノンアネルバ株式会社 | スパッタリング装置 |
JP5414340B2 (ja) * | 2009-04-24 | 2014-02-12 | 株式会社アルバック | スパッタリング方法 |
JP5438825B2 (ja) * | 2011-04-18 | 2014-03-12 | Jx日鉱日石金属株式会社 | スパッタリングターゲット |
KR101897315B1 (ko) | 2011-12-12 | 2018-09-11 | 캐논 아네르바 가부시키가이샤 | 스퍼터링 장치 및 실드 |
CN102586744B (zh) * | 2011-12-30 | 2014-05-07 | 余姚康富特电子材料有限公司 | 靶材及其形成方法 |
CN103938164B (zh) * | 2013-01-22 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Ito薄膜溅射工艺方法及ito薄膜溅射设备 |
CN105039915B (zh) * | 2015-07-28 | 2018-01-05 | 东莞市汇成真空科技有限公司 | 一种放电弧斑满布靶面的真空阴极电弧源 |
US11784032B2 (en) | 2018-11-14 | 2023-10-10 | Applied Materials, Inc. | Tilted magnetron in a PVD sputtering deposition chamber |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2030599U (zh) * | 1987-12-17 | 1989-01-11 | 成都电讯工程学院 | 一种平面磁控溅射靶 |
JPH06248444A (ja) * | 1993-02-26 | 1994-09-06 | Mitsubishi Materials Corp | スパッタリング用ターゲット |
JP3442831B2 (ja) * | 1993-10-04 | 2003-09-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
US6500321B1 (en) * | 1999-05-26 | 2002-12-31 | Novellus Systems, Inc. | Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target |
JP2000345330A (ja) * | 1999-06-02 | 2000-12-12 | Sony Corp | スパッタリングターゲット |
JP3628554B2 (ja) * | 1999-07-15 | 2005-03-16 | 株式会社日鉱マテリアルズ | スパッタリングターゲット |
JP3791829B2 (ja) * | 2000-08-25 | 2006-06-28 | 株式会社日鉱マテリアルズ | パーティクル発生の少ないスパッタリングターゲット |
JP4290323B2 (ja) * | 2000-11-01 | 2009-07-01 | キヤノンアネルバ株式会社 | スパッタ成膜方法 |
JP2002302762A (ja) * | 2001-04-04 | 2002-10-18 | Tosoh Corp | Itoスパッタリングターゲット |
-
2004
- 2004-04-30 JP JP2004136145A patent/JP4959118B2/ja not_active Expired - Lifetime
-
2005
- 2005-04-11 TW TW094111373A patent/TWI414621B/zh active
- 2005-04-25 DE DE102005019456A patent/DE102005019456A1/de not_active Withdrawn
- 2005-04-27 KR KR1020050035023A patent/KR101108894B1/ko active IP Right Grant
- 2005-04-29 CN CN200510068427.6A patent/CN1693531B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20060047524A (ko) | 2006-05-18 |
JP2005314773A (ja) | 2005-11-10 |
DE102005019456A1 (de) | 2005-11-24 |
CN1693531A (zh) | 2005-11-09 |
TWI414621B (zh) | 2013-11-11 |
CN1693531B (zh) | 2014-09-17 |
KR101108894B1 (ko) | 2012-01-31 |
TW200538570A (en) | 2005-12-01 |
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