200538570 ⑴ 九、發明說明 【發明所屬之技術領域】 本發明是有關濺鑛用的靶及使用該靶的濺鍍方法，特 別是有關使用於磁控管（Magnetron)方式的濺鍍裝置的靶 及使用該靶的濺鍍方法。 【先前技術】 磁控管濺鍍方式是在靶的後方配置一交互改變極性而 由複數個磁石所構成的磁石組合體，藉由該磁石組合體， 在靶的濺鍍面的前方形成隧道狀的磁束，而來捕捉在濺鏟 面的前方電離後的電子及藉由濺鍍而產生的二次電子，而 使能夠提高在濺鑛面的表面的電子密度，因此可提高該等 的電子與被導入真空處理室内的稀有氣體的氣體分子之衝 突確率，而提高電漿密度。於是，具有可提高成膜速度等 的優點，常利用於處理基板上形成特定的薄膜。 以往，使用於磁控管濺鍍方式的濺鍍裝置的靶，例如 爲使用圓柱狀或四角柱狀，僅使濺鍍面中磁束密度高的部 份形成厚壁者（例如參照專利文獻1 )。 在將如此形成的靶裝著於濺鍍裝置時，爲了使電漿安 定地發生，而於靶的周圍設有能夠圍繞該靶的接地屏蔽。 接地屏蔽是在與接合於紀的底板（backing plate)等耙以外 的零件之間形成暗區（dark space)，而來防止該等的零件 被濺鍍。 [專利文獻1]特開平7- 1 8 4 3 5號公報（例如，圖2)。 200538570200538570 ⑴ IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a target for sputtering and a sputtering method using the target, and more particularly to a target and a sputtering device used in a magnetron method. A sputtering method using this target. [Prior art] The magnetron sputtering method is to arrange a magnet assembly composed of a plurality of magnets at the back of the target to change the polarity alternately. With the magnet assembly, a tunnel shape is formed in front of the sputtering surface of the target. To capture the ionized electrons in front of the sputtering surface and the secondary electrons generated by sputtering, so that the electron density on the surface of the sputtering surface can be increased. The collision accuracy of the gas molecules of the rare gas introduced into the vacuum processing chamber increases the plasma density. Therefore, there is an advantage that the film-forming speed can be increased, and it is often used to form a specific thin film on a processing substrate. Conventionally, a target used in a sputtering device of a magnetron sputtering method uses, for example, a columnar shape or a quadrangular prism shape, and only a portion having a high magnetic flux density in a sputtering surface is formed as a thick wall (for example, refer to Patent Document 1) . When the target thus formed is mounted in a sputtering device, a ground shield is provided around the target so that the plasma can be generated stably. The ground shield prevents the parts from being sputtered by forming a dark space between them and parts other than the rake such as the backing plate. [Patent Document 1] Japanese Unexamined Patent Publication No. 7- 1 8 4 3 5 (for example, FIG. 2). 200538570
【發明內容】 (發明所欲解決的課題） 但，若在靶的周圍設置接地屏蔽，則例如對靶施加負 的直流電壓或高頻電壓而使電漿發生時，電流會從靶流往 接地屏蔽。因此，在靶的外周緣部的表面不會有電漿形 成，的外周緣部會有成爲不被濺鍍的非侵触（erosion)區 φ 域而殘留的問題。 此情況，一旦靶的外周縁部成爲非侵蝕區域而殘留， 則會誘發充電（charge up)的異常放電，或再附著於非侵蝕 區域的膜形成粒子（particle)的原因，對再現性佳的成膜造 成影響，且靶的利用效率會變低。 於是，有鑑於上述點，本發明的課題是在於提供一種 連靶的外周緣部也能夠形成侵蝕區域，且可制止異常放電 或粒子的發生，進而提高利用效率之濺鍍用的靶及使用該 φ 靶的濺鍍方法。 (用以解決課題的手段） 爲了解決上述課題，本發明之濺鑛用的靶，係具有特 定的外形之濺鎪用的靶，其特徵爲：在濺鍍面與周壁面所 交會的部份，對其全周賦予斜面。 若利用本發明，則因爲在濺鍍面與周壁面所交會的部 份’對其全周賦予斜面，所以例如一旦在磁控管濺鍍裝置 中使用該靶，則位於靶的外周緣部的斜面與配置於靶的後 -6- 200538570 (3) 方的磁石組合體之間的距離會變短，在斜面的表面的磁場 強度會變強。因此，在斜面的表面的電子密度會提高，一 旦對靶施加負的直流電壓或高頻電壓而使電漿發生，則在 斜面的表面也會發生電漿。其結果，靶的外周緣部會形成 被濺鍍的侵蝕區域。 藉此，不會誘發充電（charge up)的異常放電，或再附 著於非侵蝕區域的膜形成粒子的原因，因此可再現性佳地 φ 成膜，且靶的外周緣部會被濺鍍，藉此可均一地侵蝕靶， 而提高其利用效率。 此情況，爲了使靶的外周緣部形成侵蝕區域，可將來 自上述濺鍍面的斜面高度設定成上述靶的大致中央部之高 度的2 0〜8 0 %。 又，爲了使靶的外周緣部形成侵蝕區域，可將上述濺 鍍面與上述斜面所成的角度設定於5〜60°的範圍。 但，若導入氬等的特定濺鍍氣體，在電漿環境中對含 # 銦，錫及氧的ITO濺鍍用的靶進行濺鍍，則黃色的粉末會 堆積於非侵蝕區域，這會形成粒子的原因。此情況，若使 用靶的外周緣部被濺鍍而形成侵蝕區域之本發明的靶T來 作爲含銦，錫及氧的ITO濺鍍用的靶，則不會有如此的問 題發生。 又，上述靶，係例如使用於磁控管方式的濺鍍裝置， 其係於該靶的前方形成磁束，且在靶與處理基板之間形成 電場，使電漿產生來對靶進行濺鍍者。 又，本發明的濺鍍方法，係使用申請專利範圍第1〜 200538570 (4) 3項的任一項所記載之濺鍍用的靶，在此靶的濺鍍面的前 方形成磁束，且在靶與處理基板之間形成電場，使電漿產 生來對靶進行濺鍍者，其特徵爲： 以氧，氮，碳或氫或該等的混合氣體作爲反應氣體來 予以導入而進行濺鍍。 [發明的效果] • 如以上説明，本發明之濺鍍用的靶及使用該靶的濺鍍 方法，連靶的外周緣部也能夠形成侵蝕區域，因此可制止 異常放電或粒子的發生，而能夠再現性佳地成膜，且提高 利用效率。 【實施方式】 參照圖1來進行説明，其中元件符號1是表示裝著本 發明的濺鍍用的靶T之磁控管方式的濺鍍裝置（以下稱爲 「濺鍍裝置」）。濺鍍裝置1爲串聯式（in-line)，具有經由 旋轉栗（Rotary Pump)，渦輪分子栗（turbo molecular pump) 等的真空排氣手段（未圖示）來保持於所定的真空度之濺鍍 室Π。在濺鍍室11的上部設有基板搬送手段2。此基板 搬送手段2具有習知的構造，例如具有裝著處理基板S的 載體（carrier)21，使未圖示的驅動手段間歇驅動，依次搬 送處理基板S至與靶T呈對向的位置。 在濺鍍室Π中更設有氣體導入手段3。氣體導入手 段3是經由介設質量流量（MASS FLOW)控制器3 1的氣體 -8- 200538570 (5) 管32來連通至氣體源33，氬等的濺鍍氣體或反應性濺鍍 時所使用的氧，氮，碳或氫或該等的混合氣體等的反應氣 體會以一定的流量來導入濺鍍室1 1内。在濺鍍室1 1的下 側配置有陰極組合體4。 陰極組合體4具有長圓形狀的靶τ，此靶T是按照 Si、Ta，Al，C，ZnO或ITO等所欲形成於處理基板S上 的薄膜組成來製作。此情況，靶T是藉由沖壓法或鑄入法 φ 等的習知成形方法來使Si等的原料粉末成形，藉此製 作。在ITO等的靶時，是利用球磨機（BaU Mill)等來混合 特定的混合粉末之後，藉由習知的成形方法來成形製作。 如此製作的靶T是在濺鍍時接合於冷卻該靶T的底 板4 1，底板4 1會隔著絶縁板42來安裝於陰極組合體的 框架43。 另外，在靶T的周圍，爲了安定地產生電漿，而以能 夠圍繞靶T的周圍之方式設有接地屏蔽44。此情況，接 φ 地屏蔽44是在與接合於靶T的底板41等靶T以外的零 件之間形成暗區（dark space)，防止該等的零件被濺鍍。 在陰極組合體4，位於靶T的後方設有磁石組合體 45。磁石組合體45具有平行配置於靶T的支持部45a， 在此支持部45a上設有交互改變極性且取所定間隔的3個 磁石45b，45c。藉此，在靶T的濺鍍面的前方，形成有 閉迴路的隧道狀磁束Μ，捕捉在靶T的前方電離後的電子 及藉由濺鍍而產生的二次電子，而使能夠提高在濺鑛面的 表面的電子密度，進而提高電漿密度。 -9 - 200538570 (6) 一般，靶T的外形尺寸是設定成比處理基板S的外形 尺寸更大。因此，若處理基板S變大，則靶T的外形尺寸 也會變大。此情況，在靶T的後方，複數個磁石組合體 45會取所定的間隔來並設。此外，當處理基板S的外形 尺寸較大時，亦可於濺鍍室 Π配置複數個陰極組合體 4 〇 然後，藉由驅動手段來驅動載體2 1，依次將處理基 φ 板s搬送至與靶T呈對向的位置，經由氣體導入手段3來 導入濺鑛氣體或反應氣體，若經由濺鍍電源E來將負的直 流電壓或高頻電壓施加於靶T，則會在處理基板S及靶T 形成垂直的電場，使電漿產生於靶T的前方，濺鍍靶T， 而於處理基板S上成膜。 在此，若固定磁石組合體45的位置，則電漿密度會 局部地變高，濺鍍所產生之靶T的侵蝕區域會只在電漿密 度高的部份變大，靶T的利用效率會變低。於是，在磁石 φ 組合體45設置具有馬達46a的驅動手段46，在沿著靶T 的水平方向之兩處的位置之間以平行且等速來往復作動。 但，若在靶T的周圍設置接地屏蔽44，則對靶T施 加負的直流電壓或高頻電壓而使產生電漿時，電流會從靶 T流往接地屏蔽44。因此’在以往技術那樣形成圓柱狀或 四角柱狀的靶T中，電漿不會被形成於其外周縁部T1的 表面。 此情況，如圖2(a)所示’若對以往技術那樣形成的靶 T進行濺鍍，則其外周縁部11會成爲非侵蝕區域tu而殘 -10- 200538570 (7) 留。一旦外周緣部11成爲非侵蝕區域tu而殘留，則會誘 發充電異常放電，或者再附著於非侵蝕區域的膜會形成粒 子的原因，對再現性佳的成膜造成影響，且靶t的利用效 率會變低。 於是，本實施形態中，如圖1及圖3所示，在濺鍍面 Ts與周壁面Tc所交會的部份，對其全周均等地賦予斜面 T2。亦即，將靶T的濺鍍面Ts側的外周緣部予以倒角。 φ 此情況，斜面T2是在將靶T安裝於濺鍍裝置1時’只要 至少存在於藉由接地屏蔽44來突出於濺鑛室1 1側的部份 即可。 並且，以斜面T2與磁石組合體4 5之間的距離變短， 斜面T2的表面的磁場強度變強之方式，設定來自靶T的 濺鍍面Ts的斜面T2的高度H1能夠形成靶T的大致中央 部HT的高度的20〜80°/。的範圍，且將濺鍍面與上述斜面 T2所成的角度α設定於5〜60°的範圍。而且，在濺鍍面 φ 之來自周壁面Tc的斜面的距離W1最好是設定成能夠形 成靶T的長軸WL及短軸WT的10〜50%。 斜面T2是藉由沖壓法或鑄入法等習知的成形方法來 將原料粉末形成特定形狀的靶時形成，或利用習知的成形 方法來將原料材料形成特定形狀的靶T之後，藉由使用切 削工具的倒角加工，在濺鍍面Ts與周壁面TC所交會的 部份，對其全周賦予斜面T2。 藉此，由於斜面T2與磁石組合體45之間的距離短， 在斜面T2的表面的磁場強度強，因此在斜面T2的表面 -11 - 200538570 (8) 的電子密度會提高，若對靶T施加負的直流電壓或高頻電 壓來使電漿產生，則連斜面的表面也會產生電漿。其結 果，例如不導入上述反應氣體來進行濺鍍時，或導入上述 反應氣體來進行反應性濺鍍時，如圖2(b)所示，靶Τ的外 周緣部Τ1會形成被濺鍍的侵蝕區域。 但，若導入氬等的特定濺鍍氣體，在電漿環境中對含 銦，錫及氧的ΙΤΟ濺鍍用的靶進行濺鍍，則黃色的粉末會 φ 堆積於非侵蝕區域，這將會形成粒子的原因，可是若使用 外周緣部Τ1被濺鍍而形成侵蝕區域之本發明的靶Τ來作 爲含銦，錫及氧的ΙΤΟ濺鑛用的靶Τ，則不會有如此的問 題發生。 本實施形態是針對形成長圓形狀的靶Τ來進行説明， 但並非限於此，如圖4(a)〜（〇所示，即使是在形成具有 各種形狀的靶時，只要將外周緣部Τ 1予以倒角加工而形 成斜面Τ2、便可使靶的外周緣部Τ1形成侵蝕區域，且在 φ 靶Τ的後方並設複數個磁石組合物45時，同樣可形成侵 蝕區域。 [實施例1] 本實施例1中，靶Τ爲使用Si，藉由習知的方法來 將此 Si形成長軸（WL)3 00mm，短軸（WT)125mm，高度 (HT)10mm的長圓形狀，然後，在濺鍍面Ts與周壁面Tc 所交會的部份實施倒角加工，而使能夠形成横寬 (W 1)2 Omm，高度（H 1)5 mm，且接合於底板41。 -12- 200538570 (9) 然後，將此靶T安裝於圖1所示的濺鍍裝置1，使用 玻璃基板作爲處理基板s，藉由真空搬送手段2 1來依次 將此玻璃基板搬送至對向於靶Τ的位置。 就濺鍍條件而言，是以被真空排氣的濺鑛室1 1内的 壓力能夠保持〇.4Pa之方式，控制質量流量控制器31，將 濺鍍氣體的氬及反應氣體的氮予以導入濺鍍室Π内，連 續在玻璃基板上形成氮化矽膜。此情況，將靶T與玻璃基 φ 板之間的距離設定成90mm。然後，計數使往靶T的投入 電力（直流電壓）變化於〇〜7KW的範圍時之每單位時間 (min)的電弧（Arc)放電（異常放電）次數，且將其結果顯示 於圖5，如線A。 (比較例1) 比較例1中，雖以和上述實施例1同樣的尺寸來製作 Si的靶T，但在濺鍍面Ts與周壁面Tc所交叉的部份並未 Φ 實施倒角加工。濺鍍條件也是與上述實施例1同樣’將載 體2 1上的玻璃基板搬送至對向於靶T的位置’而形成氮 化矽膜。 然後，與上述實施例1同樣的，計數使往靶T的投入 電力（負的直流電位）變化於0〜7KW的範圍時之每單位時 間（miη)的電弧放電（異常放電）次數，且其結果顯示於圖 5，如線Β。 就比較例1而言’隨著往靶Τ的投入電力變大’電弧 放電的次數會急速増加’一旦投入電力超過6 K W ’則電 -13- 200538570 (10) 弧放電的次數會超過20次。相對的，就實施例1而言， 即使往靶T的投入電力變大，電弧放電的次數也不會急速 増加，在一般使用於Si的濺鍍之投入電力的範圍（7KW前 後），對靶T的外周緣部T1進行濺鍍時，與比較例1相較 之下，電弧放電的次數會壓制到1/6。 【圖式簡單說明】 圖1是槪略説明裝著本發明的靶之濺鍍裝置。 圖2是槪略説明靶的侵蝕狀況。 圖3(a)〜（c)是說明本發明的靶。 圖4(a)〜（c)是表示本發明的靶的變形例。 圖5是計數使投入電力變化時之電弧放電的次數之圖 【主要元件符號說明】 1 磁控管濺鍍裝置 4 陰極組合體 45 磁石組合體 Μ 隧道狀磁束 S 處理基板 Τ 靶 Τ1 外周緣部 Τ2 斜面 -14-[Summary of the Invention] (Problems to be Solved by the Invention) However, if a ground shield is provided around the target, for example, when a negative DC voltage or a high-frequency voltage is applied to the target and a plasma is generated, a current flows from the target to the ground. shield. Therefore, no plasma is formed on the surface of the outer peripheral edge portion of the target, and there is a problem that the outer peripheral edge portion remains as a non-erosion region φ region that is not sputtered. In this case, once the outer periphery of the target becomes a non-eroded area and remains, an abnormal discharge of charge up is induced, or the cause of film-forming particles attached to the non-eroded area is reproducible. The film formation affects the utilization efficiency of the target. Therefore, in view of the foregoing, it is an object of the present invention to provide a sputtering target for sputtering that can form an erosion area even at the outer peripheral edge portion of the target, and can prevent the occurrence of abnormal discharges or particles, thereby improving the utilization efficiency, and the use of the target. Sputtering method for φ target. (Means for Solving the Problems) In order to solve the above-mentioned problems, the target for sputtering of the present invention is a target for sputtering with a specific shape, and is characterized in that a portion where the sputtering surface and the peripheral wall surface meet , Giving a bevel to its entire perimeter. According to the present invention, since the inclined surface is provided at the portion where the sputtered surface and the peripheral wall surface meet, for example, once the target is used in a magnetron sputtering device, it is located at the outer peripheral edge portion of the target. The distance between the inclined plane and the magnet assembly arranged at the back of the target, which is 3-6, 200538570 (3), becomes shorter, and the magnetic field intensity on the surface of the inclined plane becomes stronger. Therefore, the electron density on the surface of the inclined surface increases. Once a negative DC voltage or a high-frequency voltage is applied to the target to cause plasma generation, the plasma also occurs on the surface of the inclined surface. As a result, an erosion area is formed on the outer peripheral edge portion of the target. Thereby, the cause of abnormal discharge of charge up or the formation of particles that are re-adhered to the non-eroded area is not induced, so φ is formed with good reproducibility, and the outer peripheral portion of the target is sputtered. Thereby, the target can be uniformly eroded, and its utilization efficiency is improved. In this case, in order to form an erosion area on the outer peripheral edge portion of the target, the height of the slope from the sputtering surface may be set to 20 to 80% of the height of the substantially central portion of the target. In order to form an erosion area on the outer peripheral edge portion of the target, the angle formed by the sputtered surface and the inclined surface may be set in a range of 5 to 60 °. However, if a specific sputtering gas such as argon is introduced and a target for ITO sputtering containing #indium, tin, and oxygen is sputtered in a plasma environment, yellow powder will accumulate in non-eroded areas, which will form particles. s reason. In this case, if the target T of the present invention in which an outer peripheral portion of the target is sputtered to form an erosion region is used as a target for ITO sputtering containing indium, tin, and oxygen, such a problem does not occur. The target is, for example, a magnetron-type sputtering device that forms a magnetic beam in front of the target and forms an electric field between the target and the processing substrate to generate a plasma to sputter the target. . In addition, the sputtering method of the present invention uses the sputtering target described in any one of patent application scope Nos. 1 to 200538570 (4), a magnetic flux is formed in front of the sputtering surface of the target, and A person who forms an electric field between the target and the processing substrate to generate plasma to sputter the target is characterized in that oxygen, nitrogen, carbon, hydrogen, or a mixed gas thereof is introduced as a reaction gas to perform sputtering. [Effects of the Invention] As described above, the target for sputtering according to the present invention and the sputtering method using the target can form an erosion area even at the outer peripheral edge portion of the target, so that abnormal discharge or particles can be prevented, and Films can be formed with good reproducibility and use efficiency can be improved. [Embodiment] A description will be given with reference to FIG. 1, where the reference numeral 1 is a magnetron sputtering apparatus (hereinafter referred to as a “sputtering apparatus”) showing a sputtering target T of the present invention. The sputtering device 1 is an in-line type, and has a sputtering method that maintains a predetermined vacuum level through vacuum exhaust means (not shown) such as a rotary pump, a turbo molecular pump, and the like. Plating chamber Π. A substrate transfer means 2 is provided on the upper part of the sputtering chamber 11. This substrate transfer means 2 has a known structure, for example, it has a carrier 21 on which the processing substrate S is mounted, and intermittently drives a driving means (not shown), and sequentially transfers the processing substrate S to a position opposed to the target T. A gas introduction means 3 is further provided in the sputtering chamber Π. The gas introduction means 3 is used to connect a gas source 33, a sputtering gas such as argon, or a reactive sputtering gas through a gas-8-200538570 (5) pipe 32 through a mass flow controller 31. Reactive gases such as oxygen, nitrogen, carbon, or hydrogen or a mixture of these gases are introduced into the sputtering chamber 11 at a constant flow rate. A cathode assembly 4 is disposed below the sputtering chamber 11. The cathode assembly 4 has an oblong target τ, and the target T is produced in accordance with a thin film composition to be formed on the processing substrate S, such as Si, Ta, Al, C, ZnO, or ITO. In this case, the target T is produced by forming a raw material powder such as Si by a conventional forming method such as a punching method or a casting method φ. In the case of a target such as ITO, a specific mixed powder is mixed with a ball mill (BaU Mill) or the like, and then formed by a conventional forming method. The target T thus produced is bonded to the bottom plate 41 for cooling the target T during sputtering, and the bottom plate 41 is attached to the frame 43 of the cathode assembly via an insulating plate 42. In addition, a ground shield 44 is provided around the target T so as to stably generate plasma, so as to surround the target T. In this case, the φ ground shield 44 forms a dark space between components other than the target T such as the bottom plate 41 bonded to the target T to prevent such components from being sputtered. On the cathode assembly 4, a magnet assembly 45 is provided behind the target T. The magnet assembly 45 has a support portion 45a arranged in parallel to the target T, and three magnets 45b and 45c are provided on the support portion 45a to change polarity alternately and at predetermined intervals. Thereby, a closed-loop tunnel-shaped magnetic beam M is formed in front of the sputtering surface of the target T, so that electrons ionized in front of the target T and secondary electrons generated by sputtering can be captured, so that the The electron density on the surface of the splattered surface further increases the plasma density. -9-200538570 (6) Generally, the external dimension of the target T is set larger than the external dimension of the processing substrate S. Therefore, as the processing substrate S becomes larger, the external dimensions of the target T also become larger. In this case, behind the target T, a plurality of magnet assemblies 45 are juxtaposed at a predetermined interval. In addition, when the external dimension of the processing substrate S is large, a plurality of cathode assemblies 4 can be arranged in the sputtering chamber Π, and then the carrier 21 is driven by driving means, and the processing substrate φ plate s is sequentially transferred to the The target T is at an opposite position, and the ore-spattering gas or the reaction gas is introduced through the gas introduction means 3. If a negative DC voltage or a high-frequency voltage is applied to the target T through the sputtering power source E, the substrate S and the processing substrate S and The target T forms a vertical electric field, causing a plasma to be generated in front of the target T, sputtering the target T, and forming a film on the processing substrate S. Here, if the position of the magnet assembly 45 is fixed, the plasma density will locally increase, and the erosion area of the target T generated by sputtering will only increase in the high plasma density portion, and the utilization efficiency of the target T Will go low. Then, the magnet φ assembly 45 is provided with a driving means 46 having a motor 46a, and reciprocates at two positions along the horizontal direction of the target T in parallel and at a constant speed. However, if a ground shield 44 is provided around the target T, when a negative DC voltage or a high-frequency voltage is applied to the target T to generate a plasma, a current flows from the target T to the ground shield 44. Therefore, in the target T which is formed into a columnar shape or a quadrangular prism shape as in the prior art, the plasma is not formed on the surface of the outer peripheral crotch portion T1. In this case, as shown in Fig. 2 (a) ', if the target T formed by the conventional technique is sputtered, the outer peripheral ridge portion 11 becomes a non-eroded region tu and remains -10- 200538570 (7). Once the outer peripheral edge portion 11 remains as a non-eroded area tu, abnormal charging discharge is induced, or a film attached to the non-eroded area causes particles to form, which affects the film formation with high reproducibility and uses the target t. The efficiency will become lower. Therefore, in this embodiment, as shown in Figs. 1 and 3, the inclined surface T2 is uniformly provided on the entire surface at the portion where the sputtered surface Ts and the peripheral wall surface Tc meet. That is, the outer peripheral edge portion on the sputtering surface Ts side of the target T is chamfered. φ In this case, when the target T is mounted on the sputtering apparatus 1 ', the inclined plane T2 needs to exist at least at a portion protruding from the sputtering chamber 11 by the ground shield 44. In addition, the distance H between the inclined surface T2 and the magnet assembly 45 is shortened, and the magnetic field intensity on the surface of the inclined surface T2 is increased. By setting the height H1 of the inclined surface T2 of the sputtering surface Ts from the target T, the target T can be formed. Approximately 20 to 80 ° / of the height of the central portion HT. The angle α formed by the sputtered surface and the inclined surface T2 is set in a range of 5 to 60 °. The distance W1 between the inclined surfaces of the sputtered surface φ from the peripheral wall surface Tc is preferably set to 10 to 50% of the long axis WL and the short axis WT of the target T. The inclined surface T2 is formed when a raw material powder is formed into a target having a specific shape by a conventional forming method such as a punching method or a casting method, or after the raw material is formed into a target T having a specific shape by a conventional forming method. A chamfering process using a cutting tool is performed so that a slope T2 is given to the entire periphery of the portion where the sputtered surface Ts and the peripheral wall surface TC meet. As a result, since the distance between the inclined surface T2 and the magnet assembly 45 is short, the magnetic field intensity on the surface of the inclined surface T2 is strong, so the electron density on the surface of the inclined surface T2-11-200538570 (8) will increase. Plasma is generated by applying a negative DC voltage or high-frequency voltage, and even the surface of the inclined plane will generate plasma. As a result, for example, when sputtering is performed without introducing the above-mentioned reaction gas, or when reactive sputtering is performed by introducing the above-mentioned reaction gas, as shown in FIG. 2 (b), the outer peripheral edge portion T1 of the target T is sputtered. Eroded area. However, if a specific sputtering gas such as argon is introduced, and a target for ITO sputtering containing indium, tin, and oxygen is sputtered in a plasma environment, yellow powder will be deposited in a non-eroded area. The reason for the formation of the particles is that if the target T of the present invention is used as the target T for ITO sputtering containing indium, tin, and oxygen by using the target T of the present invention to form an eroded region by sputtering the outer peripheral portion T1, no such problem will occur. . In this embodiment, a target T having a long circular shape is described, but it is not limited to this. As shown in FIGS. 4 (a) to (0), even when a target having various shapes is formed, the outer peripheral portion T 1 The chamfering process is performed to form the inclined surface T2, so that the outer peripheral edge portion T1 of the target can form an erosion area, and the erosion area can also be formed when a plurality of magnet compositions 45 are provided behind the φ target T. [Example 1] In the first embodiment, the target T is made of Si, and the Si is formed into a long circle shape with a long axis (WL) 300 mm, a short axis (WT) 125 mm, and a height (HT) 10 mm by a conventional method. The part where the sputtered surface Ts and the peripheral wall surface Tc meet is chamfered so that the width (W 1) 2 Omm and the height (H 1) 5 mm can be formed and joined to the bottom plate 41. -12- 200538570 ( 9) Next, the target T is mounted on the sputtering apparatus 1 shown in FIG. 1, and the glass substrate is used as the processing substrate s, and the glass substrate is sequentially transferred to the position facing the target T by the vacuum transfer means 21. In terms of sputtering conditions, the pressure in the sputtering chamber 11 which is evacuated by vacuum can be maintained at 0.4P. Method a, the mass flow controller 31 is controlled, and argon of the sputtering gas and nitrogen of the reaction gas are introduced into the sputtering chamber Π, and a silicon nitride film is continuously formed on the glass substrate. In this case, the target T and the glass substrate The distance between the φ plates is set to 90 mm. Then, the number of arc (Arc) discharges (abnormal discharges) per unit time (min) when the input power (DC voltage) to the target T is changed in the range of 0 to 7 KW is counted. The results are shown in Fig. 5 as line A. (Comparative Example 1) In Comparative Example 1, although a target T of Si was produced with the same dimensions as in Example 1, the sputtering surface Ts and the peripheral wall surface The portion where Tc intersects does not carry out chamfering. The sputtering conditions are the same as in the first embodiment described above, "the glass substrate on the carrier 21 is transported to a position facing the target T" to form a silicon nitride film. Then, as in the first embodiment, the number of arc discharges (abnormal discharges) per unit time (miη) when the input power (negative DC potential) to the target T is changed in the range of 0 to 7 KW is counted, and The results are shown in Figure 5 as line B. For Comparative Example 1 As the input power to the target T becomes larger, the number of arc discharges will increase rapidly. Once the input power exceeds 6 KW, the number of arc discharges will be more than 20 times. -13-200538570 (10) The number of arc discharges will be more than 20. In terms of 1, even if the input power to the target T becomes large, the number of arc discharges does not increase rapidly. In the range of the input power (approximately 7KW) used for sputtering of Si, the outer peripheral edge portion T1 of the target T When performing sputtering, the number of arc discharges is reduced to 1/6 compared to Comparative Example 1. [Brief Description of the Drawings] FIG. 1 is a schematic illustration of a sputtering apparatus equipped with a target of the present invention. Fig. 2 is a schematic illustration of the erosion of the target. 3 (a) to 3 (c) illustrate the target of the present invention. 4 (a) to (c) show modified examples of the target of the present invention. Fig. 5 is a graph showing the number of arc discharges when the input power is changed. [Description of main component symbols] 1 Magnetron sputtering device 4 Cathode assembly 45 Magnet assembly M Tunnel-shaped magnetic beam S Processing substrate T Target T1 Outer periphery Τ2 Inclined surface 14-