CN102586744B - Target blank and forming method thereof - Google Patents
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- CN102586744B CN102586744B CN201110455069.XA CN201110455069A CN102586744B CN 102586744 B CN102586744 B CN 102586744B CN 201110455069 A CN201110455069 A CN 201110455069A CN 102586744 B CN102586744 B CN 102586744B
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Abstract
The invention relates to a target blank and a forming method thereof. The edge of the target blank is provided with a bevel angle region. The forming method has the advantages that the bevel angle treatment is carried out on the edge of the target blank to increase the adhesion surface area of the edge of the target blank so that an anti-sputtering material can be more uniformly and smoothly attached to the inclined surface of the bevel angle region, and a local attachment is prevented from being too thick to cause the peeling, thereby greatly reducing the abnormal discharge in a high vacuum chamber of a sputter reactor.
Description
Technical field
The present invention relates to metal sputtering field, relate in particular to a kind of target and forming method thereof.
Background technology
In the process of manufacturing at semiconducter device, sputter is a very important film forming technology.Its Basic Mechanism is in sputterer, with particle (electronics, ion, neutral particle) the bombardment solid surface of certain energy, its surperficial atom is escaped from surface by likely obtaining enough energy with the collision of high energy particle, then under the effect of electrical forces or magnetic force, on silicon chip, moves.
In said process, the solid being bombarded is called target, and target is comprised of the backboard (Backing Plate) of target (Target Blank) and support target.Target can be divided into simple substance target, alloy target material, or compound target.Simple substance target is generally the metals such as highly purified Al, Ta, Ti, Cu.Alloy target material is titanium aluminium, ambrose alloy, titanium chromium etc.Compound target is silicon oxide, aluminum oxide.The backboard that supports target adopts copper, aluminum composition conventionally.
The physical process that film is prepared in sputter comprises following six basic steps: 1. in the plasma body in high vacuum chamber, produce positive argon ion, and accelerate to the target with negative potential; 2. at accelerator intermediate ion, obtain momentum, and bombard target; 3. ion clashes into (sputter) atom by physical process from target; 4. be knocked out the atomic migration of (sputter) to silicon chip surface.5. the atom being sputtered condenses and forms film at silicon chip surface, and with target comparison, film has and its essentially identical material component; 6. additional materials is taken away by vacuum pump.In this process, the momentum of the ion of bombardment target is accelerated to produce by electric field or magnetic field.For example, the Chinese patent that publication number is CN1763241A discloses a kind of sputtering target material backboard, and target and this backboard are welded together, and has jointly formed the target that sputter is used.
And after sputter for some time, all can there is the stores that some are identical with target composition in the edge for the treatment of sputter face of most of target, the sticking power of these storess and target is not very large, after being stacked into a certain degree due to the impact of gravity and chamber internal electric field power, magnetic field force, can peel off, form paradoxical discharge, affect sputter environment.
Summary of the invention
For addressing the above problem, the invention provides a kind of target and forming method thereof, prevent that reverse sputtering material from peeling off.
A kind of target, described target edge has oblique angle district.
Optionally, the inclined-plane in described oblique angle district with described in treat sputter face angle be 165 ± 1 degree.
Optionally, described target be shaped as circular, square or annular.
Optionally, described target is circular, and the width in described oblique angle district and the ratio of described target diameter are 1: (25.5～26.0).
Optionally, the hypotenuse size in described oblique angle district and the ratio of described target diameter are 1: (24.6～25.1).
Optionally, described target is square, and the ratio of the long limit size of the width in described oblique angle district and described target is 1: (25.5～26.0).
Optionally, the ratio of the long limit size of the hypotenuse size in described oblique angle district and described target is 1: (24.6～25.1).
Optionally, described target is annular, and the ratio of the outer ring diameter of the width in described oblique angle district and described target is 1: (25.5～26.0).
Optionally, the ratio of the outer ring diameter of the hypotenuse size in described oblique angle district and described target is 1: (24.6～25.1).
Optionally, described target is of a size of in 6 cun, 8 cun, 10 cun and 12 cun any.
The present invention also provides a kind of formation method of target, it is characterized in that, comprising:
Target is provided;
Fixing described target, Shi Qi edge exposes;
Target edge described in turning, forms oblique angle district;
Polish in the inclined-plane for the treatment of sputter face and described oblique angle district to the described target after described turning;
The inclined-plane for the treatment of sputter face and described oblique angle district of the described target after described polishing is cleaned.
Optionally, the inclined-plane in described oblique angle district with described in treat sputter face angle be 165 ± 1 degree.
Optionally, described target be shaped as circular, square or annular.
Compared with prior art, the present invention has the following advantages:
The present invention is by carrying out oblique angle processing to target edge, the attaching surface that increases target edge is long-pending, make reverse sputtering substance more evenly, on the milder inclined-plane that is attached to oblique angle district, prevent that blocked up causing of local dirt settling from peeling off, reduced greatly the situation of the interior paradoxical discharge of high-vacuum chamber in sputterer, on silicon chip, form the rete of good uniformity, improve the performance of semiconducter device.
Accompanying drawing explanation
By the more specifically explanation of the preferred embodiments of the present invention shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.In whole accompanying drawings, identical Reference numeral is indicated identical part.Deliberately by physical size equal proportion convergent-divergent, do not draw accompanying drawing, focus on illustrating purport of the present invention.
Fig. 1 is the floor map that reverse sputtering material is piled up at the edge of target of the prior art.
Fig. 2 is the sectional view of the target shown in Fig. 1 along AA ' direction.
Fig. 3 is the details enlarged diagram that the reverse sputtering material shown in Fig. 1 is piled up situation.
Fig. 4 is the floor map that the edge in the present invention has carried out the target of oblique angle processing.
Fig. 5 is target in Fig. 4 sectional view along BB ' direction.
Fig. 6 is target in the present invention schematic diagram in sputterer.
Fig. 7 is the details enlarged diagram that on its edge of target in Fig. 6 of the present invention, reverse sputtering material is piled up situation.
Fig. 8 is the schema of the formation method of target shown in Fig. 4.
Fig. 9 is the schematic diagram with the fixing described target of fixture in the formation method of target of the present invention.
Embodiment
In actual production process; usually can due to the electric field of the edge away from target center or magnetic field a little less than; and make the momentum of the ion that bombards target edge large not; so clash into the momentum of (sputter) atom from target also little; these atomic migrations form film to substrate not; but backwash, to target edge, is piled up gradually again, forms stores.Be stacked into a certain degree, be easy to peel off, in the reaction chamber of sputter, form paradoxical discharge, affect the homogeneity of the rete of the formation of sputter, when situation is serious, even can form at the edge of substrate the accumulation of the convex of sputter material, have a strong impact on the performance of the semiconducter device of made.
The present invention treats that to target the edge of sputter face carries out oblique angle processing and increases the area coverage at reverse sputtering material and target edge, also increased the adhesive power at the edge of reverse sputtering material and target simultaneously, make reverse sputtering substance more evenly, on the milder inclined-plane that is attached to oblique angle district, prevent that blocked up causing of local dirt settling from peeling off.Through production practice, such mode has a significant effect, and during sputter, the phenomenon of paradoxical discharge greatly reduces.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public concrete enforcement.
8 cun of circular titanium targets take diameter as 341.40mm～341.66mm carry out magnetron sputtering as example, illustrate that ins and outs of the present invention and effect are as follows.In the prior art, as depicted in figs. 1 and 2, sputter was carried out after for some time, and some reverse sputtering materials 5 have been piled up at the edge for the treatment of sputter face of target 100 (titanium target).
The titanium of returning due to reverse sputtering has not been and titanium target all-in-one-piece material, and the adhesion of itself and titanium target is bad; And, in the sputter of titanium, can sneak into nitrogen, under the state of high temperature, be easy to allow the Surface Creation skim titanium nitride of titanium target, titanium nitride is harder, with reverse sputtering material to stick effect poorer.On titanium target, reverse sputtering material is piled up the details enlarged view of situation and is illustrated as Fig. 3, reverse sputtering material 5 edge that is attached to target 100 in layer, because the Area comparison of the edge of target is little, can not make enough the adhering on it of reverse sputtering material 5, reverse sputtering material 5 easily forms the larger stores of thickness in such a manner, in sputter, what these reverse sputtering materials 5 just easily became that piece or one-tenth sticks together peels off, and at chamber, causes paradoxical discharge, affects sputter environment.
Meet in other embodiments the target blank of hardness more than 50HV, as tantalum target, or the situation that most of targets such as copper target all can have similar reverse sputtering material to pile up, and in other embodiments, according to the actual requirement of applied environment, sputtering equipment, target can also be square and annular.
Fig. 4 is the floor map that the edge in the present invention has carried out the target 200 of oblique angle processing, is formed with the oblique angle district 2 at oblique angle.Fig. 5 is target 200 in Fig. 4 sectional view along BB ' direction.In conjunction with Fig. 4 and Fig. 5, target 200 is first to treat sputter face in the sputter face for the treatment of forming before oblique angle district 2, and first treats that the diameter of sputter face is R, and the treat sputter face of target 200 after forming oblique angle district 2 is second to treat sputter face, and second treats that the diameter of sputter face is R1.The width in described oblique angle district 2 is a1, first of target 200 treats that the diameter R and second of sputter face treats the half of the difference of the diameter R1 of sputter face.The hypotenuse in described oblique angle district 2 is of a size of a2.
The width a1 in oblique angle district 2 changes according to the size of target in actual production, when the size of target changes, conventionally the width a1 in oblique angle district 2 changes with the diameter R (diameter of target) of the first sputter face of target 200, the ratio of the diameter R of width a1 and target 200 is 1: (25.5～26.0), in the present embodiment, when the diameter R of the first sputter face of target 200 is 341.40mm～341.66m, the width a1 in oblique angle district 2 is 13.14mm～13.40mm, can obtain comparatively ideal effect.In other embodiments, the size of target can also be in 6 cun, 10 cun, 12 cun of present common-use size any.
In addition, in other embodiments, the shape of described target can be square or annular.When being shaped as of target is square, target is first to treat sputter face in the sputter face for the treatment of forming before oblique angle district, and the treat sputter face of target after forming oblique angle district is second to treat sputter face.The width in oblique angle district was now target before forming oblique angle district first treats the long limit size of sputter face and target the second half for the treatment of the difference of the long limit size of sputter face after formation oblique angle district, the width in oblique angle district changes with the long limit size of the first sputter face of target, and the ratio of the long limit size of the width in oblique angle district and target the first sputter face is 1: (25.5～26.0);
When target be shaped as annular time, target is first to treat sputter face in the sputter face for the treatment of forming before oblique angle district, the treat sputter face of target after forming oblique angle district is second to treat sputter face.Oblique angle district a1 is now target first treats the outer ring diameter of sputter face before forming oblique angle district and the difference that forms second after oblique angle district and treat the outer ring diameter of sputter face, the width in oblique angle district changes with the outer ring diameter of the first sputter face of target, and the ratio of the outer ring diameter of the width in oblique angle district and target the first sputter face is 1: (25.5～26.0).
As shown in Figure 5, second of the inclined-plane in described oblique angle district and described target treat that angle beta that sputter face is is 165 ± 1 degree.If second of the inclined-plane in oblique angle district and described target treats that angle beta that sputter face is is greater than 166 degree, the inclined-plane in the oblique angle district of target is too slow, can reduce second of target and treat the area of sputter face; If second of the inclined-plane in oblique angle district and described target treats that angle beta that sputter face is is less than 164 degree, the inclined-plane in the oblique angle district of target is too steep, the bond area at target edge is too little, and reverse sputtering material is difficult for dropping on the oblique angle district of target, and the adhesion effect of reverse sputtering material is undesirable.Now, the hypotenuse size a2 in oblique angle district changes with the diameter R of the first sputter face of β angle and target, and the present embodiment a2 is 13.61mm～13.97mm.The ratio of the diameter R of the hypotenuse size a2 in described oblique angle district and the first sputter face of described target is 1: (24.6～25.1).
Equally, in other embodiments, when described target is while being square, the hypotenuse size in oblique angle district is with the long limit dimensional change of the first sputter face of β angle and target; When described target is annular, the hypotenuse size in oblique angle district is with the long limit dimensional change of the first sputter face of β angle and target;
The target forming through above-mentioned steps being when putting into production and using, and actual effect has also shown that target that the edge of target has oblique angle district is in sputter, and the situation that reverse sputtering material peels off has reduced a lot.The target 15 (comprising backboard 17 and target 16) that process above-mentioned steps in sputterer 11 as shown in Figure 6 forms, the oblique angle district 1 at the edge of its target 16, makes in sputter procedure, and the situation that reverse sputtering material peels off has reduced a lot.
As shown in Figure 6, vacuum chamber 12 comprises columnar sidewall 14 substantially, and sidewall is electrical ground.Second of sputtering target material 16 is treated sputter face 2, is sealed to vacuum chamber 12.Base electrode 22 is supported for the silicon chip 24 that will be subject to sputter coating parallel relative with target 16.Vacuum chamber 12 and target 16 are symmetrical substantially about central axis 38.
Sputter working gas (being preferably argon) quantitatively enters chamber through mass flow control device 28 from gas supply device 26.Unshowned vacuum pump system remains on the inside of vacuum chamber 12 to be generally 10
-8torr or lower extremely low basic pressure.During plasma igniting, to produce the amount supply argon pressure of about 5milliTorr chamber pressure, but subsequently this pressure is reduced.DC power supply 34 is be pressed onto approximately-600VDC of target 16 negative bias, the plasma body that argon working gas is provoked into contain electronics and positive argon ion.Positive argon ion attracted to the target 16 of negative bias, and treats that from second of target 16 sputter face 2 sputters atoms metal.
Forming above-mentioned oblique angle district target 16 afterwards carries out after the sputter of for some time, second of its target 16 treats that situation that in the oblique angle district on sputter face edge, reverse sputtering material 5 is piled up as shown in Figure 7, the metal titanium that reverse sputtering is returned can be more even, milder is stacked on inclined-plane, prevent that blocked up causing of local dirt settling from peeling off, reduced greatly in sputterer the situation of paradoxical discharge in high-vacuum chamber.Can make the rete on the silicon chip 24 in sputter device more even, improve film quality.
Another embodiment below provides the formation method of above-mentioned target, as shown in Fig. 8 (only having to S84 in Fig. 8), comprises the steps:
Step S81, provides target;
Step S82, fixing described target, Shi Qi edge exposes;
Step S83, target edge described in turning, forms oblique angle district;
Step S84, polishes to the inclined-plane for the treatment of sputter face and described oblique angle district of the described target after described turning;
Step S85, cleans the inclined-plane for the treatment of sputter face and described oblique angle district of the described target after described polishing.
First, execution step S81, provides target.According to the actual requirement of applied environment, sputtering equipment, the shape of target can be circular, square and annular.The material of target can be simple substance target, alloy target material, or any (hardness of target will more than 50HV) of compound target.In the present embodiment, goodly select circular titanium target.
In step S82, fixing described target, Shi Qi edge exposes.
As shown in Figure 9, in the present embodiment, adopting fixture 21 that target 10 is fixed, carry out turning processing, for clearer succinct explanation the present invention, just illustrate the cutter of turning machine in Fig. 9, is cutter 30.The difficult generation while making target 10 carry out turning process operation that act as of fixture 21 vibrated, therefore when turning, just can avoid because the bounce-back of target 10, cause cutter 30 to collapse cutter, simultaneously, owing to adding the stable of target 10 in man-hour in turning, the lines that cutter 30 forms on target 10 surfaces also can be consistent.
Described fixture 21 can be all-round fixture, can be also plain clamp.In the present embodiment, be all-round fixture, all-round fixture makes the surrounding of target be surrounded by fixture, and fixed effect is better.
The edge of target is exposed, for preparing in the oblique angle district of following process target.
Then perform step S83, target edge described in turning, forms oblique angle district.
The sputter face that the edge turning of target is formed to the target before oblique angle district is first to treat sputter face, and the sputter face that forms the target after oblique angle district after turning is second to treat sputter face.The inclined-plane in described oblique angle district and second treats that sputter face is 165 ± 1 angles, and the width a1 in oblique angle district is 1 with the diameter ratio of target: (25.5～26.0), the diameter ratio of oblique angle district hypotenuse size a2 and target is 1: (24.6～25.1).The smooth finish of the second sputter face of the surface in oblique angle district and target is consistent as far as possible.
It should be noted that in turning and add and adopt spray cooling man-hour.Described spray cooling comprises: turning liquid is ejected into turning district.
Turning liquid mainly plays two effects, the one, lubrication in the turning of the target of the present embodiment; The 2nd, cooling effect.Can turning liquid give full play to effective lubrication, and its penetrating power power is an important factor.The penetrating power of conventional turning liquid is not strong, and the amount of liquid that can be vaporized is little, and lubricant effect is restricted.And the two-phase fluid that spray cooling forms can make up the deficiency of cutting fluid penetration ability.When gas-liquid two-phase fluid is ejected into cutting zone, have higher speed, kinetic energy is larger, and therefore penetrating power is stronger, thereby lubricant effect is better, and the titanium producing during turning is considered the probability being wrapped on cutter to be worth doing and just reduced.Thereby can improve because titanium bits are wrapped in the target material surface causing on cutter, scratch, occur the situations such as uneven.Therefore, the roughness of target material surface is just reduced, and surface is Paint Gloss.
On the other hand, in the turning processing of target, heat in metal cutting is mainly derived from the viscous deformation of target, and the process of cooling in turning district is exactly the heat transfer process between solid and fluid.
Then perform step in S84, polished in the inclined-plane for the treatment of sputter face and described oblique angle district of the described target after described turning.
More optimal, the described target to after described turning before sputter face (target second until sputter face) is polished, can carry out to second of the described target after turning, treat that sputter face carries out stress relief.In turning first being processed, there is certain internal stress target inside.In turning, adding described in man-hour internal stress can be from the release gradually of target inside, thereby causes the distortion of target, makes planeness produce deviation.Thereby, by carry out stress relief after turning, eliminate the internal stress of target, to reduce the distortion of target.Target is left unused at least 8 hours.Described idle target can being placed under room temperature condition.By described stress relief, eliminate product internal stress.
Second of target after counter stress discharges treats that the object that sputter face is polished is the zone of oxidation that second of removal target is treated sputter face, makes second of target treat sputter face smooth.
In the present embodiment, to second of described target, treat that it is mainly that water-based sand paper with from coarse to fine is polished successively that sputter face is polished, and makees wetting agent with water or alcohol during polishing.
First use flint paper (the present embodiment is 400# water-based sand paper), polishing 5min～10min; Then use slightly thick sand paper (the present embodiment is 800# water-based sand paper) polishing 5min～10min; Finally use fine sandpaper (the present embodiment is 1500# water-based sand paper) to continue polishing 5min～10min, can obtain like this flour milling of smooth.
Preferably perform step S85, the inclined-plane for the treatment of sputter face and described oblique angle district of the described target after described polishing is cleaned.
In the present embodiment, with clear water, to second of target, treat that sputter face cleans, scavenging period is 1～2min.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (8)
1. a target, comprise and treat sputter face, it is characterized in that, described target is titanium target, described target is 8 cun of circular targets, and described target edge has oblique angle district, and the width in described oblique angle district is 13.14mm～13.40mm, the inclined-plane in described oblique angle district with described in treat sputter face angle be 165 ± 1 degree, described oblique angle has an inclined-plane; The applicable vacuum sputtering condition of described target is: the pressure of vacuum chamber is for being less than or equal to 10
-8torr, the negative bias that described target is applied is-600V that described sputter gas comprises argon gas and nitrogen.
2. target as claimed in claim 1, is characterized in that, described target is circular, and the width in described oblique angle district and the ratio of described target diameter are 1:(25.5～26.0).
3. target as claimed in claim 2, is characterized in that, the hypotenuse size in described oblique angle district and the ratio of described target diameter are 1:(24.6～25.1).
4. target as claimed in claim 1, is characterized in that, described target is square, and the ratio of the long limit size of the width in described oblique angle district and described target is 1:(25.5～26.0).
5. target as claimed in claim 4, is characterized in that, the ratio of the long limit size of the hypotenuse size in described oblique angle district and described target is 1:(24.6～25.1).
6. target as claimed in claim 1, is characterized in that, described target is annular, and the ratio of the outer ring diameter of the width in described oblique angle district and described target is 1:(25.5～26.0).
7. target as claimed in claim 6, is characterized in that, the ratio of the outer ring diameter of the hypotenuse size in described oblique angle district and described target is 1:(24.6～25.1).
8. a formation method for target, is characterized in that, comprising:
Target is provided, comprises and treat sputter face, described target is titanium target, and described target is 8 cun of circular targets, and the applicable vacuum sputtering condition of described target is: the pressure of vacuum chamber is for being less than or equal to 10
-8torr, the negative bias that described target is applied is-600V that described sputter gas comprises argon gas and nitrogen;
Fixing described target, Shi Qi edge exposes;
Target edge described in turning, forms oblique angle district, and described oblique angle district has an inclined-plane, and the width in described oblique angle district is 13.14mm～13.40mm, the inclined-plane in described oblique angle district with described in treat sputter face angle be 165 ± 1 degree, described turning processing adopts spray cooling;
Polish in the inclined-plane for the treatment of sputter face and described oblique angle district to the described target after described turning, the step of described polishing comprises:
Adopt 400# water-based sand papering 5 minutes～10 minutes;
Adopt after the sand papering of 400# water-based, adopt 800# water-based sand papering 5 minutes～10 minutes;
Adopt after the sand papering of 800# water-based, adopt 1500# water-based sand papering 5 minutes～10 minutes;
The inclined-plane for the treatment of sputter face and described oblique angle district of the described target after described polishing is cleaned.
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| US9147558B2 (en) * | 2013-01-16 | 2015-09-29 | Applied Materials, Inc. | Finned shutter disk for a substrate process chamber |
| CN105734508B (en) * | 2016-04-08 | 2019-08-16 | 有研亿金新材料有限公司 | A kind of oxide target material and preparation method thereof |
| CN108620812B (en) * | 2017-03-17 | 2019-10-22 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN109295427B (en) * | 2018-09-29 | 2021-01-22 | 厦门乾照光电股份有限公司 | Method and device for cleaning sputtering target |
| CN109894629A (en) * | 2019-04-12 | 2019-06-18 | 东莞市欧莱溅射靶材有限公司 | Cylindrical target increase sputtering area processing method |
| CN113084236A (en) * | 2021-04-26 | 2021-07-09 | 宁波江丰电子材料股份有限公司 | Machining method for sputtering target material inclined plane patterns |
| CN113290351B (en) * | 2021-05-25 | 2023-05-12 | 宁波江丰电子材料股份有限公司 | Method for prolonging service life of tungsten-titanium target |
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