CN103481199B - The processing method of target - Google Patents

The processing method of target Download PDF

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Publication number
CN103481199B
CN103481199B CN201210199632.6A CN201210199632A CN103481199B CN 103481199 B CN103481199 B CN 103481199B CN 201210199632 A CN201210199632 A CN 201210199632A CN 103481199 B CN103481199 B CN 103481199B
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target
sand
blasting
blasting treatment
roughness
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CN103481199A (en
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姚力军
相原俊夫
大岩一彦
潘杰
王学泽
高建
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Ningbo Jiangfeng Electronic Material Co Ltd
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Ningbo Jiangfeng Electronic Material Co Ltd
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Abstract

A processing method for target, comprising: provide target, and the sputter face of described target comprises sand blasted area and non-sand blasted area; Treat that blasting treatment is carried out in sand blasted area to target, described blasting treatment comprises: carry out direct press type blasting treatment after carrying out gravity type blasting treatment.The present invention adopts and first utilizes gravity type blasting treatment to form the less surface of roughness at target material surface, and then utilizes direct press type blasting treatment to increase roughness, and in such mode, roughness can distribute more even, and easily realizes larger roughness.

Description

The processing method of target
Technical field
The present invention relates to field of semiconductor fabrication, particularly relate to a kind of processing method of target.
Background technology
In the process that semiconductor devices manufactures, sputtering is a very important film forming technology.Its Basic Mechanism is that target is under the bombardment of suitable high energy particle (electronics, ion, neutral particle), the atom on its surface likely obtains enough energy by the collision with high energy particle and escapes from surface, then moves on silicon chip under the effect of electric field force or magnetic force.The physical process of Slag coating film comprises following six basic steps: 1. in the plasma in high vacuum chamber, produce ion, and accelerates to the target material with negative potential; 2. obtain momentum at accelerator intermediate ion, and bombard target; 3. ion clashes into (sputtering) atom by physical process from target; 4. be knocked out the atomic migration of (sputtering) to silicon chip surface; 5. sputtered atom condenses at silicon chip surface and forms film, and compare with target material, film has the material component substantially identical with it; 6. additional materials is taken away by vavuum pump.In whole process, the generation that the momentum bombarding the ion of target is accelerated by electric field or magnetic field.
And after sputtering a period of time, all can there is some deposits identical with target material composition in the edge of major part target, the adhesive force of these deposits and target is not very large, be stacked into the impact due to gravity and chamber internal electric field power, magnetic field force to a certain degree, can peel off, swim in chamber, form paradoxical discharge, impact sputtering environment.
In order to overcome problem above, needing to process the carrying out of non-sputtered of target, utilizing sandblasting to carry out rough process.Improve non-sputtered and glue stickiness, enable the non-sand blasted area after roughening better adhere to the target material depositing to non-sputtered, reduce the probability that it peels off.Specifically can see that publication number is that the Chinese patent of CN1648280A discloses a kind of sputtering target material with the surface texture of improvement.
And existing target material surface is by after the rough process of sandblasting, limitation is existed to the adsorption capacity of deposit, and when semiconductor technology processing procedure is complicated, still easily produce the problems such as paradoxical discharge, the serious quality that have impact on product.Need to provide a kind of method can complying with the change of semiconductor technology process conditions and complicated blasting treatment, to provide the target that can meet more stringent process conditions.
Summary of the invention
The object of this invention is to provide a kind of method can complying with the change of semiconductor technology process conditions and complicated blasting treatment, to provide the target that can meet more stringent process conditions.
For solving the problem, the invention provides a kind of processing method of target, comprising:
There is provided target, the sputter face of described target comprises sand blasted area and non-sand blasted area;
Treat that blasting treatment is carried out in sand blasted area to target, described blasting treatment comprises: carry out direct press type blasting treatment after carrying out gravity type blasting treatment.
Optionally, also comprised before blasting treatment is carried out to target: polishing is carried out to described target, then carry out deoiling operation.
Optionally, sand paper is adopted to carry out described polishing.
Optionally, isopropyl alcohol is adopted to carry out deoiling operation.
Optionally, also comprised before blasting treatment is carried out to target: operation is covered to the non-sand blasted area of target.
Optionally, masking tape is adopted to cover operation to non-sand blasted area.
Optionally, described gravity type blasting treatment adopts gravity type sand-blasting machine, and wherein, the air pressure of the sand-blasting gun of gravity type sand-blasting machine is 3 ~ 6MPa, and the model of sand material is WA300 ~ 100, and the distance of target and sand-blasting gun is 10 ~ 30cm.
Optionally, during described gravity type blasting treatment, target rotation, sand-blasting gun is fixed.
Optionally, described direct press type blasting treatment adopts direct press type sand-blasting machine, and the air pressure of the sand-blasting gun of direct press type sand-blasting machine is 3 ~ 6MPa, and the model of sand material is WA60 ~ 24, and the distance of target and sand-blasting gun is 10 ~ 30cm.
Optionally, after described gravity type blasting treatment, before direct press type blasting treatment, also comprise: adopt air gun to blow sand material remaining on described target off.
Optionally, after direct press type blasting treatment, also comprise: roughness concentration is carried out to sand blasted area.
Optionally, one or many carries out described blasting treatment to the result of described roughness concentration and meets the requirements.
Compared with prior art, the present invention has the following advantages:
First utilize gravity type blasting treatment to form the less surface of roughness at target material surface, and then utilize direct press type blasting treatment to increase roughness, both easily realized larger roughness, ensure that again roughness can distribute more even.
Accompanying drawing explanation
Fig. 1, Fig. 2 are the process charts to target process of the present invention;
Fig. 3 to Fig. 8 is the process schematic of the present invention to target process.
Detailed description of the invention
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
As depicted in figs. 1 and 2, it specifically comprises the following steps the flow chart of target processing method embodiment of the present invention:
Step S1: target is provided.
The target 100 provided can as shown in Figure 3, and described target 100 comprises sputter face, and the fringe region of described sputter face is non-sputtered region, need to carry out blasting treatment to non-sputtered region, namely non-sputtered region is sand blasted area, and sputter area needs to keep smooth surface, is non-sand blasted area.Then as shown in FIG., described target 100 has non-sand blasted area 11 and is positioned at the sand blasted area 12 of target frontside edge.In the present embodiment, described target 100 is semiconductor sputtering technology targets used, with ultra-high purity metal (aluminium, titanium, copper, tantalum, nickel, chromium etc.) for raw material, through series of complex precision process processing and manufacturings such as forging, heat treatment, rolling, heat treatment, welding, purity is 4N5,5N or 6N.Wherein, described 4N5 represents that purity is that 99.995%, 5N represents that purity is 99.999%, and 6N represents that purity is 99.9999%.In addition, the shape of target, according to the actual requirement of applied environment, sputtering equipment, can difformity, as any one in circle, rectangle, annular, taper shape or other analogous shapes (comprise regular shape and irregularly shaped), and its thickness can be 1mm to 100mm not etc.Be the circular target of 310mm with diameter in present embodiment be example, its actual (real) thickness is 12mm, this thickness is the allowance adding 1mm to 3mm in design size, and the object increasing allowance provides well-to-do processing space to the procedure of processing formed after target material assembly.Described non-sand blasted area 11 is the annular section along its edge, non-sand blasted area 11 of the present invention is according to the needs of actual different process and distinct device, can be one or more region of other region of target material surface and other shape, present specification be restricted this.
Step S2: polishing is carried out to target.
Described being finished to utilizes abrasive paper for metallograph to carry out grinding process to whole target material surface, and the burr that the processing technology before removal produces at target material surface, impurity and surface oxide layer etc., to obtain smooth, even curface, improve its surface smoothness.The particle size range of sand paper can be selected to be 100 to 2000.
Step S3: target is deoiled operation.
Utilizing organic solvent to deoil operation to target, removing dirt or the impurity such as oil stain, sand grains that target material surface is produced by staiing in processing technology before, for subsequent technique reserves a clean surface.Preferably, adopt isopropyl alcohol (IPA) solvent carry out described in deoil operation.
Preferably, also comprise after deoiling and drying or the process of drying.
Step S4: operation is covered to target.
As shown in Figure 4, the non-sand blasted area 11(that masking tape 25 covers described target is adopted to join Fig. 3), expose the sand blasted area 12 at edge.Described masking tape 25 has certain anti-pressure ability, can bear the pressure in follow-up sand blasting process, and keep intact in the surface of the non-sand blasted area 11 under masking tape 25 is covered, injury-free.
Step S5: blasting treatment is carried out to target.
Blasting treatment is utilize the percussion cleaning of high speed sand flow and the process of alligatoring matrix surface.Sandblasting adopts compressed air to be power, to form high velocity jet bundle by material spray high velocity jet to needing injected body surface to be processed, the appearance of injected body surface or shape are changed, because abrasive material is to the impact of injected body surface and shear action, the surface of injection object is made to obtain certain cleannes and different roughness.In the present invention, mainly utilize blasting treatment to realize function that ejecta surface has certain roughness.The kind being applied to the sandblasting sand material used of semicon industry is mainly WA(white fused alumina), GB(bead).Often kind of sand material has multiple granular size.
Sandblasting is divided into gravity type sandblasting and direct press type sandblasting.The mode of gravity type sandblasting be sand tank above sand-blasting machine, sand material falls by self gravitation and to be blown out by compressed air afterwards, and the particle of sandblasting is little, strength is weak.Adding pressure type sandblasting is named again in direct press type sandblasting, and sand material and compressed air are blended in an air accumulator, and during use, sand material sprays together along with compressed air, and the particle of sandblasting is large, strength is larger.
Concrete, in the present invention, the process of blasting treatment is carried out as shown in Figure 5 to target, adopt sand-blasting gun 7 material spray 33 to be ejected into the sand blasted area 12 that target 100 does not have overlay masking adhesive tape 25.Described blasting treatment mainly comprises first to be carried out gravity type blasting treatment to target and carries out direct press type blasting treatment to target again.Because the rugosity of the matsurface of gravity type sandblasting formation is less, the rugosity of the matsurface that direct press type sandblasting is formed is larger, such gravity type sandblasting first can form the face of a less roughness at target material surface, can ensure that the rugosity of the matsurface formed is comparatively large again after direct press type sandblasting, and uniformity is better.And simple direct press type sandblasting only can ensure that roughness is enough large, and the uniformity that roughness distributes cannot be ensured.
Concrete, the main operating process of step S5 is:
Step S51: gravity type blasting treatment is carried out to target.
Use gravity type sand-blasting machine to requiring that sandblasting operation is first carried out in the face of sandblasting.In the process of described gravity type blasting treatment, the air pressure arranging sand-blasting gun is 3 ~ 6MPa, use sand material specification to be WA300 ~ 100.When carrying out sandblasting target to be carried out relative rotation by sand blasted area (non-sand blasted area 11) with the muzzle of sand-blasting gun, and the distance controlling of sand-blasting gun is between 10 ~ 30cm.
Preferably, the blasting treatment of this step adopts and is undertaken by the mode that sandblasting side (target) rotates.Concrete, the relative position of target and nozzle is set, fixed nozzle, then rotates target and carry out sand blasted surface sandblasting.Publication number is that the Chinese patent application of CN201596974U provides a kind of sand-blasting system of surface of target, utilizes such system, and the target rotation that utilizes that can realize in the present invention carries out the mode of sandblasting.Preferably, the rotation of target is at the uniform velocity.
Step S52: blow remaining sand material off.
After sandblasting completes, air blow gun is used to blow remaining sand material off.During use, the air pressure regulating air blow gun to blow is 2 ~ 4MPa.
Step S53: direct press type blasting treatment is carried out to target.
The sand material of direct press type sand-blasting machine (air pressure: 3 ~ 6MPa) and WA60 ~ 24 model is used to carry out secondary sandblasting to sandblasting position first.
Step S54: blow remaining sand material off.
After secondary sandblasting, after sandblasting completes, air blow gun is used to blow remaining sand material off.During use, the air pressure regulating air blow gun to blow is 2 ~ 4MPa.
After step S51 ~ S54 completes, form the surface 14 with roughness in the sand blasted area 12 on the surface of target 100, as shown in Figure 6.
Step S6: roughness concentration.
The roughness of injected after detecting step S5.When adopt ocular estimate check by sand blasted area surface roughness and uniformity obviously than regulation roughness and uniformity bad or there is obvious blemish time, repeat the operation in step S5, to make target material surface state close to regulation.
When estimating roughness and the uniformity of target material surface roughness and the close regulation of uniformity, contact roughness measuring instrument is utilized to carry out surface finish measurement.Concrete operations are, choose on several uniform position, sand blasted area and measure respectively, analyze roughness and uniformity that whether its measurement result conform with the regulations.According to the requirement of client to rugosity and uniformity, the flow process of step S5 to S6 can be carried out repeatedly, until roughness and uniformity reach requirement.
Preferably, 4 ~ 6 uniform positions are got when utilizing contact roughness measuring instrument to measure.A kind of contact roughness measuring instrument is adopted to measure in the present embodiment, it has diamond stylus, there is the upper and lower displacement amount of sensor sensing diamond stylus inside, also there is electronics counting circuit or electronic computer, can automatically calculate profile arithmetic average error Ra, the assessment parameters of nao-and micro relief 10 height Rz and other various surface roughness.As shown in Figure 7, evenly choose 81 ~ 86 6 positions in the sand blasted area 14 of target 100 to detect.After the roughness that sand blasted area 14 conforms with the regulations and uniformity being detected, remove masking tape 25, obtain satisfactory target 100, as shown in Figure 8.
According to method provided by the invention, the sand blasted area of target material surface can be made to have better uniformity and roughness.
Carry out target process through original mode and mode of the present invention, wherein, demand fulfillment rugosity specification value is the requirement of Ra:6.35 ~ 8.89 μm.Obtain as shown in two tables below: wherein table one is carry out the rugosity data after sandblasting before improving, and which employs direct press type blasting treatment, the sand material model of employing is No. 24 white fused alumina sand materials, carries out repeatedly sandblasting, until sand blasted area meets rugosity specification; Table two carries out the rugosity data after sandblasting for improving rear method.First adopt gravity type sand-blasting machine, the sand material model of employing is No. 220 white fused aluminas, blasting pressure 0.3 ~ 0.5MPa, and then adopt direct press type sand-blasting machine, sand material model is No. 46 white fused aluminas, and blasting pressure is 0.3 ~ 0.5MPa.
Table one: carry out the rugosity data after sandblasting before improvement
Table two: the rear method of improvement carries out the rugosity data after sandblasting
Analyze two tables can find, in table one, rugosity is very uneven, and as estimated Rz in first group and the 3rd group, and the difference of Rz maximum and minimum of a value has 30 μm; And second group of data rugosity Ra exceeds specification value.In table two, rugosity is even, and measurement point is entirely in specification value, and the difference of Rz maximum and minimum of a value almost cuts down half before improving.Contrast in the actual use procedure of the target of two kinds of processing methods, can find along with the minimizing of rugosity difference effectively avoids the problem of discharging at hyperbaric environment lower prong.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.

Claims (9)

1. a processing method for target, is characterized in that, comprising:
There is provided target, the sputter face of described target comprises sand blasted area and non-sand blasted area;
Target treated that blasting treatment is carried out in sand blasted area;
After described blasting treatment completes, form the surface with roughness in the sand blasted area on the surface of target;
Roughness concentration, the roughness whether analysis to measure result conforms with the regulations and uniformity, according to the requirement to roughness and uniformity, perform the flow process of blasting treatment repeatedly, until roughness and uniformity reach requirement;
Wherein, described blasting treatment comprises:
Gravity type blasting treatment is carried out to target;
After gravity type sandblasting completes, blow remaining sand material off;
Direct press type blasting treatment is carried out to target;
After direct press type sandblasting completes, blow remaining sand material off.
2. processing method as claimed in claim 1, is characterized in that, also comprise: carry out polishing to described target, then carried out deoiling operation before carrying out blasting treatment to target.
3. processing method as claimed in claim 2, is characterized in that, adopts sand paper to carry out described polishing.
4. processing method as claimed in claim 2, is characterized in that, adopts isopropyl alcohol to carry out deoiling operation.
5. processing method as claimed in claim 1, is characterized in that, also comprised before carrying out blasting treatment to target: cover operation to the non-sand blasted area of target.
6. processing method as claimed in claim 5, is characterized in that, adopts masking tape to cover operation to non-sand blasted area.
7. processing method as claimed in claim 1, is characterized in that, described gravity type blasting treatment adopts gravity type sand-blasting machine, wherein, the air pressure of the sand-blasting gun of gravity type sand-blasting machine is 3 ~ 6MPa, and the model of sand material is WA300 ~ 100, and the distance of target and sand-blasting gun is 10 ~ 30cm.
8. processing method as claimed in claim 7, it is characterized in that, during described gravity type blasting treatment, target rotation, sand-blasting gun is fixed.
9. processing method as claimed in claim 1, it is characterized in that, described direct press type blasting treatment adopts direct press type sand-blasting machine, and the air pressure of the sand-blasting gun of direct press type sand-blasting machine is 3 ~ 6MPa, the model of sand material is WA60 ~ 24, and the distance of target and sand-blasting gun is 10 ~ 30cm.
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