CN101492808A - Surface treatment process for square TiW target material for sputtering - Google Patents
Surface treatment process for square TiW target material for sputtering Download PDFInfo
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- CN101492808A CN101492808A CNA2009100250580A CN200910025058A CN101492808A CN 101492808 A CN101492808 A CN 101492808A CN A2009100250580 A CNA2009100250580 A CN A2009100250580A CN 200910025058 A CN200910025058 A CN 200910025058A CN 101492808 A CN101492808 A CN 101492808A
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Abstract
The invention discloses a surface treatment technique of a square TiW target material used for sputtering coating, comprising the steps of shielding, primary sand spraying, secondary sand spraying, shield removal, washing, drying, etc. In the technique, sand spraying is carried out in the redeposition area on the surface of the square TiW target material by sand spraying, the surface roughness of the area is increased and the adhesion force of the redeposition area on the TiW particles is increased, so as to prevent TiW particles from peeling off the target material due to poor adhesion force and irrecoverable physical damage from occurring on the surface of the product, thus reducing the ratio of inferior products and improving the quality of products.
Description
Technical field
The present invention relates to a kind of process of surface treatment, particularly a kind of surface treatment process for square TiW target material for sputtering.
Background technology
Sputtering process is a kind ofly mainly to utilize glow discharge (glow discharge) with argon gas (Ar) ionic bombardment target (target) surface, makes the atom of target be deposited in the film forming a kind of method in substrate (substrate) surface by ejection.Because the character of sputtering thin film, uniformity coefficient all than evaporated film come good, therefore all obtained using comparatively widely at industry-by-industry.At present, a kind of sputtering process commonly used is a magnetic control tubular type DC sputter, this process using DC power supply, but in actual use owing to be subjected to influence of magnetic field, in the magnetic field line upright position of target because ion--the Ar of bombardment target
+Not magnetic field force induced influence is so the TiW target of position can not be by Ar
+Bombardment is come out.But there are a large amount of TiW atoms that suspend in the entire reaction cavity, these TiW atoms tend to be deposited on any position of reaction chamber, so be not subjected on the TiW target magnetic field line vertical position of any bombardment effect depositing Ti W atom once more yet, after depositing to certain thickness, because sedimentary TiW layer and TiW target sticking power are very poor again, and have very big stress, causing again easily, depositing Ti W layer peels off.And TiW target and product be in over against the position; in the sputter process, if when peeling off, it peels off particulate and has and strike on the product surface; thereby cause product surface that expendable physical damage takes place, can cause the product fraction defective to increase serious even make product rejection.
Summary of the invention
At above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention provides a kind of surface treatment process for square TiW target material for sputtering, by the TiW target material surface is carried out sandblasting, be deposited on the risk that the TiW particulate on the TiW target material surface peels off thereby eliminate, avoid product surface that expendable physical damage takes place, improve product quality.
For solving the problems of the technologies described above, the present invention adopts following technical scheme to realize:
A kind of surface treatment process for square TiW target material for sputtering, it comprises the steps:
1) covers: confirm that target is easy to generate the position in sedimentary zone again, covers these extra-regional other target positions;
2) sandblast: with coarse sand the TiW particulate in the deposition region is again bombarded, so that it peels off;
3) secondary sandblast: with fine sand the TiW target material surface in the deposition region is again bombarded, and measure the value of the roughness Ra in the deposition region again, the value of the roughness Ra in deposition region again reaches 5-7um;
4) removal is covered: the hovel on the target is removed;
5) clean: clean with high pressure water earlier, use ultrasonic cleaning then, use the ultrapure water rinse more then, at last with air gun with TiW target material surface moisture removal;
6) drying: the TiW target is carried out dustless drying.
According to above-mentioned major technique feature, step 2) needing the sandblast number of times in be 9～10 times, and the time is 40～60 seconds, and pressure is 3.5Kgf/cm
2
According to above-mentioned major technique feature, needing the sandblast number of times in the step 3) is 9～10 times, and the time is 40～60 seconds, and pressure is 3.5Kgf/cm
2
According to above-mentioned major technique feature, the time of ultrasonic cleaning is 3-5 minute in the step 5).
According to above-mentioned major technique feature, the time with the ultrapure water rinse in the step 5) is 20-30 minute.
According to above-mentioned major technique feature, envrionment temperature is 80 ℃ in the step 6), and be more than 2.5 hours time of drying.
Technique scheme has following beneficial effect: in this surface treatment process for square TiW target material for sputtering, make the lip-deep deposition region again of square TiW target material carry out sandblast by the sandblast step, the roughness of this region surface is increased, increase again the sticking power of deposition region to the TiW particulate, avoid TiW particulate and target to peel off owing to sticking power is too poor, can avoid expendable physical damage taking place, thereby reduce the product fraction defective, improve product quality at product surface.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technique means of the present invention, and can be implemented according to the content of specification sheets, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Description of drawings
Fig. 1 is the flow chart of steps of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail:
As shown in Figure 1, as a preferred embodiment of the present invention, this surface treatment process for square TiW target material for sputtering comprises the steps:
1) covers: confirm that target is easy to generate the position in sedimentary zone again, covers these extra-regional other target positions;
2) sandblast: with coarse sand the TiW particulate in the deposition region is again bombarded so that it peels off, the sandblast number of times is 10 times, and the time is 50 seconds, and pressure is 3.5Kgf/cm
2
3) secondary sandblast: the TiW target material surface in the deposition region is again bombarded with fine sand, and measure again the value of the roughness Ra in the deposition region, and the value of the roughness Ra in deposition region again reaches 5-7um, and the sandblast number of times is 10 times, time is 50 seconds, and pressure is 3.5Kgf/cm
2
4) removal is covered: sedimentary more extra-regional hovel on the target is removed;
5) clean: clean with high pressure water earlier, used ultrasonic cleaning then 4 minutes, used the ultrapure water rinse more then 25 minutes, at last with air gun with TiW target material surface moisture removal;
6) drying: the TiW target was carried out under 80 ℃ of environment dustless dry 3 hours.
In this surface treatment process for square TiW target material for sputtering, make the lip-deep deposition region again of square TiW target material carry out sandblast by the sandblast step, the roughness of this region surface is increased, increase again the sticking power of deposition region to the TiW particulate, avoid TiW particulate and target to peel off owing to sticking power is too poor, can avoid expendable physical damage taking place, thereby reduce the product fraction defective, improve product quality at product surface.
More than a kind of surface treatment process for square TiW target material for sputtering that the embodiment of the invention provided is described in detail; for one of ordinary skill in the art; thought according to the embodiment of the invention; part in specific embodiments and applications all can change; in sum; this description should not be construed as limitation of the present invention, is allly made any change with design philosophy of the present invention, all within protection scope of the present invention.
Claims (6)
1. a surface treatment process for square TiW target material for sputtering is characterized in that it comprises the steps:
1) covers: confirm that target is easy to generate the position in sedimentary zone again, covers these extra-regional other target positions;
2) sandblast: with coarse sand the TiW particulate in the deposition region is again bombarded, so that it peels off;
3) secondary sandblast: with fine sand the TiW target material surface in the deposition region is again bombarded, and measure the value of the roughness Ra in the deposition region again, the value of the roughness Ra in deposition region again reaches 5-7um;
4) removal is covered: the hovel on the target is removed;
5) clean: clean with high pressure water earlier, use ultrasonic cleaning then, use the ultrapure water rinse more then, at last with air gun with TiW target material surface moisture removal;
6) drying: the TiW target is carried out dustless drying.
2 surface treatment process for square TiW target material for sputtering as claimed in claim 1 is characterized in that: step 2) in to need the sandblast number of times be 9～10 times, the time is 40～60 seconds, pressure is 3.5Kgf/cm
2
3 surface treatment process for square TiW target material for sputtering as claimed in claim 1 is characterized in that: needing the sandblast number of times in the step 3) is 9～10 times, and the time is 40～60 seconds, and pressure is 3.5Kgf/cm
2
4 surface treatment process for square TiW target material for sputtering as claimed in claim 1 is characterized in that: the time of ultrasonic cleaning is 3-5 minute in the step 5).
5 surface treatment process for square TiW target material for sputtering as claimed in claim 1 is characterized in that: the time with the ultrapure water rinse in the step 5) is 20-30 minute.
6 surface treatment process for square TiW target material for sputtering as claimed in claim 1 is characterized in that: envrionment temperature is 80 ℃ in the step 6), and be more than 2.5 hours time of drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100250580A CN101492808A (en) | 2009-02-18 | 2009-02-18 | Surface treatment process for square TiW target material for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100250580A CN101492808A (en) | 2009-02-18 | 2009-02-18 | Surface treatment process for square TiW target material for sputtering |
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|---|---|
| CN101492808A true CN101492808A (en) | 2009-07-29 |
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| CNA2009100250580A Pending CN101492808A (en) | 2009-02-18 | 2009-02-18 | Surface treatment process for square TiW target material for sputtering |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103481199A (en) * | 2012-06-13 | 2014-01-01 | 宁波江丰电子材料有限公司 | Target material processing method |
| CN105695943A (en) * | 2014-11-28 | 2016-06-22 | 宁波江丰电子材料股份有限公司 | Target processing method |
| CN106799679A (en) * | 2016-12-22 | 2017-06-06 | 当涂县宏宇金属炉料有限责任公司 | A kind of titanium alloy surface handling process |
| CN106826568A (en) * | 2016-12-22 | 2017-06-13 | 当涂县宏宇金属炉料有限责任公司 | A kind of copper alloy surface handling process |
| CN107413715A (en) * | 2016-05-24 | 2017-12-01 | 合肥江丰电子材料有限公司 | The clean method of target |
| CN108816929A (en) * | 2018-05-31 | 2018-11-16 | 宁波江丰电子材料股份有限公司 | The cleaning method of semi-finished product tantalum screw thread in a kind of tantalum target production process |
| CN109590267A (en) * | 2018-12-28 | 2019-04-09 | 深圳仕上电子科技有限公司 | Cleaning method |
| TWI656240B (en) * | 2018-07-13 | 2019-04-11 | 友礦材料股份有限公司 | Target sputtering surface roughness processing method |
| CN111993287A (en) * | 2020-07-31 | 2020-11-27 | 上海富乐德智能科技发展有限公司 | Regeneration method of anodic oxidation part in dry etching equipment for semiconductor |
| CN112705510A (en) * | 2020-12-10 | 2021-04-27 | 四川富乐德科技发展有限公司 | Method for cleaning residues on surfaces of anti-sticking plate parts |
| CN112959224A (en) * | 2021-02-03 | 2021-06-15 | 合肥江丰电子材料有限公司 | Method for preventing oxidation of target material after sand blasting |
| CN114082705A (en) * | 2021-11-16 | 2022-02-25 | 宁波江丰电子材料股份有限公司 | Surface cleaning method for high-purity manganese |
| CN114211405A (en) * | 2021-12-17 | 2022-03-22 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing fluoride on surface of aluminum substrate |
| CN114714257A (en) * | 2022-03-21 | 2022-07-08 | 合肥江丰电子材料有限公司 | Sand blasting method for target material |
-
2009
- 2009-02-18 CN CNA2009100250580A patent/CN101492808A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103481199A (en) * | 2012-06-13 | 2014-01-01 | 宁波江丰电子材料有限公司 | Target material processing method |
| CN103481199B (en) * | 2012-06-13 | 2016-02-17 | 宁波江丰电子材料股份有限公司 | The processing method of target |
| CN105695943A (en) * | 2014-11-28 | 2016-06-22 | 宁波江丰电子材料股份有限公司 | Target processing method |
| CN107413715A (en) * | 2016-05-24 | 2017-12-01 | 合肥江丰电子材料有限公司 | The clean method of target |
| CN106799679A (en) * | 2016-12-22 | 2017-06-06 | 当涂县宏宇金属炉料有限责任公司 | A kind of titanium alloy surface handling process |
| CN106826568A (en) * | 2016-12-22 | 2017-06-13 | 当涂县宏宇金属炉料有限责任公司 | A kind of copper alloy surface handling process |
| CN108816929A (en) * | 2018-05-31 | 2018-11-16 | 宁波江丰电子材料股份有限公司 | The cleaning method of semi-finished product tantalum screw thread in a kind of tantalum target production process |
| TWI656240B (en) * | 2018-07-13 | 2019-04-11 | 友礦材料股份有限公司 | Target sputtering surface roughness processing method |
| CN109590267A (en) * | 2018-12-28 | 2019-04-09 | 深圳仕上电子科技有限公司 | Cleaning method |
| CN111993287A (en) * | 2020-07-31 | 2020-11-27 | 上海富乐德智能科技发展有限公司 | Regeneration method of anodic oxidation part in dry etching equipment for semiconductor |
| CN112705510A (en) * | 2020-12-10 | 2021-04-27 | 四川富乐德科技发展有限公司 | Method for cleaning residues on surfaces of anti-sticking plate parts |
| CN112959224A (en) * | 2021-02-03 | 2021-06-15 | 合肥江丰电子材料有限公司 | Method for preventing oxidation of target material after sand blasting |
| CN114082705A (en) * | 2021-11-16 | 2022-02-25 | 宁波江丰电子材料股份有限公司 | Surface cleaning method for high-purity manganese |
| CN114211405A (en) * | 2021-12-17 | 2022-03-22 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing fluoride on surface of aluminum substrate |
| CN114714257A (en) * | 2022-03-21 | 2022-07-08 | 合肥江丰电子材料有限公司 | Sand blasting method for target material |
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Application publication date: 20090729 |