CN106319443A - Cleaning method for vacuum coating substrate - Google Patents
Cleaning method for vacuum coating substrate Download PDFInfo
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- CN106319443A CN106319443A CN201510355273.2A CN201510355273A CN106319443A CN 106319443 A CN106319443 A CN 106319443A CN 201510355273 A CN201510355273 A CN 201510355273A CN 106319443 A CN106319443 A CN 106319443A
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Abstract
The invention provides a cleaning method for a vacuum coating substrate. The substrate is fixed to a clamp. A detergent solution is added to an ultrasonic wave machine and heated to about 60 DEG C, the substrate is put into the ultrasonic wave machine and is cleaned for 10 minutes, then the substrate is blow-dried through high-pressure nitrogen gas, and finally the substrate is put into a drying machine and dried for 10 minutes; after the substrate is completely dried, the substrate is put into a vacuum chamber tool frame, the vacuum chamber is closed, and a vacuum system is started for air exhaust; when the background vacuum degree of the vacuum chamber is below 0.001 Pascal, argon gas is introduced, the vacuum degree is maintained between 0.1 Pascal and 0.9 Pascal, and an ion sputtering power source is started; and the substrate on the tool frame is subjected to sputter cleaning. Through ion sputtering, stains, residual gas and the like which are incompletely attached to the surface of the substrate can be cleaned through ultrasonic waves, the surface of the substrate can be activated, and the bonding force of a film and the substrate is improved.
Description
Technical field
The present invention relates to field of vacuum coating, particularly relate to the cleaning method of substrate before plated film.
Background technology
Vacuum coating technology is a kind of important surface strengthening technology that recent decades grows up, and at thin-film solar cells chip manufacturing, low emissivity glass for building, solar control film glass, and is widely used on the coating tool and mould of field of machining.It is few that vacuum coating technology has materials, strengthen effective advantage, it is coated with as a example by TiAlN thin film by carbide surface, before not being coated with TiAlN thin film, its hardness only about 1500HV, oxidation resistance temperature is less than 600 DEG C, and plates the Cemented Carbide Hardness after TiAlN thin film and reach more than 2500HV, and oxidation resistance temperature is up to 800 DEG C.
But the key factor affecting vacuum coating effect is the adhesion between thin film and substrate, during the bad meeting of adhesion causes using, thin film comes off from the surface of substrate, thus loses strengthening effect.When particularly plated film tool and mould uses under the conditions of high-speed and high-temperature, if thin film comes off from substrate surface, owing to exceeding the use condition not having plated film tool and mould, the breaking-up of tool and mould can be caused.Affect a lot of because have of thin film and substrate adhesion, technological parameter when mainly having vacuum coating the most appropriately, such as sputtering voltage, sputtering current etc., but the clean degree of substrate surface is the most out in the cold.It was verified that the clean degree of substrate surface is to affect the key factor that thin film is strong and weak with substrate adhesion during vacuum coating.
The method cleaning substrate at present is to put into substrate to carry out ultrasonic cleaning in ultrasound machine, and effect is limited.The present invention is on the basis of ultrasonic cleaning, and the feature of combined vacuum coating, in the case of not increase equipment, it is further provided a kind of cleaner matrix cleaning method.
Summary of the invention
Vacuum film plating substrate cleaning method, first substrate is fixed on fixture, detergent solution is added in ultrasonic drilling machine, it is heated to about 60 DEG C, matrix is put into after cleaning 10 minutes in ultrasonic drilling machine, with high pressure nitrogen, matrix is dried up, finally it is put in baker baking 10 minutes, put into after matrix is completely dried in the vacuum chamber movements and postures of actors, close vacuum chamber, unlatching vacuum system is bled, when vacuum chamber background vacuum is less than 0.001 Pascal, it is passed through argon, vacuum is made to maintain 0.1 Pascal to 0.9 Pascal, open ion sputtering power supply, substrate in the movements and postures of actors is sputtered, kind according to substrate, adjust sputtering time.
Preferably, described ion sputtering includes the back bias voltage glow-discharge sputtering of integration, also includes that single ion source sputters.
Preferably, sputtering time is between 10 minutes to 30 minutes.
By ion sputtering, can be by incomplete for the ultrasonic cleaning spot being attached to substrate surface, residual gas etc. is removed, and can activate substrate surface, improves thin film and concrete adhesion.
Detailed description of the invention
Hard alloy substrate is fixed on fixture, detergent solution is added in ultrasonic drilling machine, it is heated to about 60 DEG C, matrix is put into after cleaning 10 minutes in ultrasonic drilling machine, with high pressure nitrogen, matrix is dried up, finally it is put in baker baking 10 minutes, put into after matrix is completely dried in the vacuum chamber movements and postures of actors, close vacuum chamber, open vacuum system and bleed, when vacuum chamber background vacuum is less than 0.001 Pascal, it is passed through argon, makes vacuum maintain 0.3 Pascal, open grid bias power supply, substrate in the movements and postures of actors is sputtered, sputtering time 30 minutes.
Claims (3)
1. vacuum film plating substrate cleaning method, substrate is fixed on fixture, detergent solution is added in ultrasonic drilling machine, it is heated to about 60 DEG C, matrix is put into after cleaning 10 minutes in ultrasonic drilling machine, with high pressure nitrogen, matrix is dried up, finally it is put in baker baking 10 minutes, put into after matrix is completely dried in the vacuum chamber movements and postures of actors, it is characterized in that, also include that ion sputtering is cleaned, when vacuum chamber background vacuum is less than 0.001 Pascal, it is passed through argon, vacuum is made to maintain 0.1 Pascal to 0.9 Pascal, open ion sputtering power supply, substrate in the movements and postures of actors is carried out sputter clean.
Vacuum film plating substrate cleaning method the most according to claim 1, it is characterised in that described ion sputtering includes the back bias voltage glow-discharge sputtering of integration, also includes that single ion source sputters.
Vacuum film plating substrate cleaning method the most according to claim 1, it is characterised in that the time of described sputter clean is between 10 minutes to 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510355273.2A CN106319443A (en) | 2015-06-25 | 2015-06-25 | Cleaning method for vacuum coating substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510355273.2A CN106319443A (en) | 2015-06-25 | 2015-06-25 | Cleaning method for vacuum coating substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106319443A true CN106319443A (en) | 2017-01-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510355273.2A Pending CN106319443A (en) | 2015-06-25 | 2015-06-25 | Cleaning method for vacuum coating substrate |
Country Status (1)
| Country | Link |
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| CN (1) | CN106319443A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110678056A (en) * | 2019-09-27 | 2020-01-10 | 深圳市西陆光电技术有限公司 | Novel electronic shielding film and method |
| CN114086143A (en) * | 2021-11-30 | 2022-02-25 | 湘潭宏大真空技术股份有限公司 | Substrate coating process |
-
2015
- 2015-06-25 CN CN201510355273.2A patent/CN106319443A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110678056A (en) * | 2019-09-27 | 2020-01-10 | 深圳市西陆光电技术有限公司 | Novel electronic shielding film and method |
| CN114086143A (en) * | 2021-11-30 | 2022-02-25 | 湘潭宏大真空技术股份有限公司 | Substrate coating process |
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Legal Events
| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170111 |