CN105951051A - Method of preparing graded refractive index antireflection film by adopting oblique sputtering process - Google Patents
Method of preparing graded refractive index antireflection film by adopting oblique sputtering process Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
Abstract
The invention discloses a method of preparing a graded refractive index antireflection film by adopting an oblique sputtering process. The method comprises the steps as follows: one, wash a substrate; two, clean a sputtering furnace, place the washed substrate, and adjust the mounting angle; three, conduct vacuumizing; four, conduct sputtering coating; and five, take out the substrate, and shut down a general supply. According to the method, by combing the conventional magnetron sputtering method with an oblique evaporation coating technology, a film coating surface of the substrate and an evaporation coating source crucible are inclined by 0-90 degrees, in this way a source material is bombarded by Ar plasma to produce atoms or molecules after collision, the differences of the stroke and the differences of the arrival angles of the atoms or the molecules, after the atoms or molecules are conveyed between a target source and the substrate and then arrive at the surface of the substrate, result in condensation and nucleation sequence differences on a film forming surface, so that the purpose that nanometer magnitude structural growth is formed on the film forming surface is reached. The plated antireflection film grows to form a nano column and rod-shaped porous structure due to the shadowing effect, so that the gradient graded refractive index characteristic is realized.
Description
Technical field
The present invention relates to the preparation method of a kind of graded index antireflection film, particularly relate to a kind of utilize oblique sputtering technique to carry out method prepared by graded index antireflection film.
Background technology
In contemporary optics film production, antireflective coating exceedes other all types of film systems.In order to reduce loss caused when incident optical energy reflects on lens glass surface, on minute surface, often plate the uniform transparent membrane of a layer thickness, utilize the interference of thin film to make reflection luminous energy be minimized.Graded index films refers to that the refractive index of thin film gradually changes along film thickness direction, but keeps constant in the horizontal direction.Owing to which eliminating abrupt interface, add design sensitivity, it is possible to achieve the performance that many traditional batch deielectric-coating cannot realize, such as less stress, preferable adhesive force, comparatively ideal optical characteristics etc..
Applying relatively simple anti-reflection film to be generally monofilm at present, wide is then double-deck or multilayer film.Antireflection film material and refractive index thereof currently mainly are shown in Table 1.
Antireflection film material that table 1 is main and refractive index thereof
| Material | Refractive index | Material | Refractive index |
| MgF2 | 1.3～1.4 | SiN | 1.9 |
| SiO2 | 1.4～1.5 | TiO2 | 2.3 |
| Al2O3 | 1.8～1.9 | Ta2O3 | 2.1～2.3 |
| SiO | 1.8～1.9 | ZnS | 2.3～2.4 |
Flourish along with nanotechnology, nano-porous materials is due to its high porosity, and compared to dense material, its coefficient of refraction is relatively low.This characteristic makes nano-porous materials become the ideal material of preparation antireflective (AR) film.Knorr and Hoffman finds oblique angle deposition process evaporated film (GLAD, glancing angle
Deposition) film crystal structure can be changed, so that film performance is changed.By adjusting tradition evaporation process procedure parameter, can be with controllable growth nanostructured.Compared with tradition evaporated film, the method uses source material evaporation, shadow occlusion principle to prepare metal nano bar array plex structure, it is thus possible to change film crystal structure.
Owing to science and technology is the most progressive, the preparation technology of the antireflective coating that different times is commonly used also differs widely, and the most conventional antireflective film preparation method has precious metal catalyst technology, sol-gal process, chemical corrosion method, roller coating plated film, vacuum evaporation, ion assisted deposition technology and sputter coating (being divided into direct current (DC) sputtering, radio frequency (RF) sputtering and magnetron sputtering) etc..Wherein: sputtering method is a kind of method of thin film physical vapor deposition, conventional sputtering apparatus substrate coated surface is placed in parallel with sputtering target source, utilize the ion bom bardment material surface with electric charge, and in collision process, there is the conversion of energy energy momentum, thus the most at last material surface atomic excitation out, transporting between source and substrate；Sputtered atom out or molecule are in the deposit of substrate surface: condensation → nucleation → growth → film forming, and are deposited on the surface of the substrate being preset in vacuum drying oven, thus a kind of technology of cover film over the substrate surface.
Summary of the invention
It is an object of the invention to provide a kind of method that oblique sputtering technique prepares graded index antireflective coating, conventional magnetron sputtering method is utilized to combine evaporation coating technique, substrate coated surface and vapor deposition source crucible are biased 0 ~ 90 ° of angle place, so source material is by Ar plasma bombardment, stroke and the difference of angle of arrival that substrate surface is passed by is arrived after touching knock-on atom or molecule transporting between target source and substrate, cause in film formation surface condensation, nucleation order difference, and make surface form the purpose of nanometer scale structure growth.Plated and put antireflection film and grow into nano-pillar, shaft-like loose structure due to shade capture-effect, thus realized gradient refractive index characteristics.
It is an object of the invention to be achieved through the following technical solutions:
A kind of method that oblique sputtering technique prepares graded index antireflective coating, comprises the steps:
One, substrate is cleaned.
Two, cleaning sputtering stove, places the substrate after cleaning, and adjusts and lays angle, makes coated surface bias 0 ~ 90 ° of placement with vapor deposition source crucible；For realizing above-mentioned angle conditions, need to make 0 ~ 90 ° of angle block gauge and coordinate assembling, as it is shown in figure 1, angle block gauge size long * width * height=40*30*30, angle adjusted design 10 ~ 90 ° as required.
Three, evacuation: starting mechanical pump, open the pre-valve of taking out above sputtering stove simultaneously, gauge reaches 1 ~ 10Pa, close and take out valve in advance, open front step valve, open molecular pump, being evacuated to required vacuum 5e-3 ~ 1e-4 Pa, preheat substrate, controlling temperature is 50 ~ 500 DEG C.
Four, sputter coating: open argon air accumulator and open effusion meter again, adjust Ar flow 10 ~ 80 SCCM, controls oxygen and argon volume ratio is 1:(3 ~ 9), air pressure 0.5 ~ 5Pa in sputtering chamber, open Cathode Target Source baffle plate, regulate running voltage 300 ~ 1800V, carry out sputter coating.
Five, take out substrate, close main power: after having sputtered, cut off shielding power supply switch, close argon switch, molecular pump, front step valve and mechanical pump, open vent valve, take out substrate.
Present invention have the advantage that
1, in the present invention, by optimizing and revising the angle between sputtering target source and substrate, it is achieved target source molecule arrives the regulation of the incident angle of substrate, thus can realize the film preparation of nano-porous structure.Method is easy, it is easy to original body of heater realizes transformation, and lowers improvement cost.
2, in the present invention, described substrate can use various required plating to put the substrate of antireflective coating, such as optical glass, metallic substrates, polymer material substrate etc..
3, sputtering technology can carry out being coated with of metal targets or the nonmetal target of compound as required, greatly strengthen the motility of technique.
4, magnetron sputtering method has that adhesion of coating film is strong, substrate temperature is low, thin film compactness is good, deposition rate is fast and can effectively prevent the advantages such as impurity pollution, has been obtained for using widely.
5, gained graded index antireflective coating has the feature of relatively high permeability and gradually changed refractive index.
Accompanying drawing explanation
Fig. 1 is the structural representation of angle block gauge；
Fig. 2 is nano rod array tilt sputter-deposition technology schematic diagram, in figure: 1-gas inlet and outlet, 2-vacuum pump system, 3-substrate base adjusting bracket, 4-heater, 5-baffle plate, 6-target substrate, 7-radio-frequency power supply, 8-cooling system, sputtering condition: base vacuum: 5.0 × 10-4Pa, working vacuum: 0.5 ~ 5Pa, Ar throughput: 20 ~ 50 SCCM, evaporation rate: 1 ~ 20/S, target source molecule angle of incidence: 30 ~ 89 °, underlayer temperature: 20 ~ 500 DEG C；
Fig. 3 is the cleaning process figure of substrate；
Fig. 4 is TiO prepared by oblique sputtering technique2Nanometer shaft-like thin film SEM schemes；
Fig. 5 is the gradual change catadioptric photo pictorial diagram that different angles observe same thin film, right-angle view directly over a-, biases 30 ° of observations on the left of b-, biases 60 ° of observations on the left of c-, biases 45 ° of observations directly over d-, biases 75 ° of observations directly over e-.
Detailed description of the invention
Below in conjunction with the accompanying drawings technical scheme is further described; but it is not limited thereto; every technical solution of the present invention is modified or equivalent, without deviating from the spirit and scope of technical solution of the present invention, all should contain in protection scope of the present invention.
Detailed description of the invention one: present embodiments provide for the TiO of a kind of ITO substrate2Antireflection film preparation method, as in figure 2 it is shown, specifically comprise the following steps that
One, substrate is cleaned: the performances such as the uniformity of dielectric layer and fastness are had a significant impact by the cleanliness factor of substrate, and when substrate is unholiness, the dielectric layer thin film deposited thereon can produce film defects, and is very easy to come off.Therefore, reply substrate cleans repeatedly, reduces the exogenous impurity pollution to dielectric layer as far as possible.During as it is shown on figure 3, clean, according to toluene, acetone and ethanol order, by substrate each ultrasonic waves for cleaning 10min in toluene, acetone and ethanol, to remove the Organic substance such as oxide and greasy dirt in substrate；Also available electron cleanout fluid or pickling, takes out after cleaning up, is positioned over dry for standby in vacuum drying oven.
Two, cleaning sputtering stove, adjusts sputtering angle, and places substrate: adjust substrate base adjusting bracket (that is: angle block gauge), its spacing distance with target is set to 8cm, adjusts substrate base adjusting bracket angle and become 70 ° of angles with target pedestal.Whole process needs wear gloves to complete, to prevent from polluting substrate.
Three, evacuation: start mechanical pump, open simultaneously and pre-take out valve above sputtering stove, when gauge reaches predetermined value 2Pa, close and take out valve in advance, open front step valve, open molecular pump, when being evacuated to required vacuum 5e-4Pa, open radio frequency source main switch radio frequency source is preheated, open simultaneously and substrate is heated 100 DEG C.
Four, sputtered film: open argon air accumulator and open effusion meter again, adjust Ar flow so that Ar flow is 27sccm, O2Flow is 9sccm, and oxygen and argon ratio are about 1:3.Opening charge valve afterwards, the air pressure in regulation push-pull valve switch to sputtering chamber is 5e-1Pa.Opening radio-frequency (RF) switch, plate voltage Ua is adjusted to 800V, and regulation tune button makes forward power maximum, and backward power is minimum.Pre-sputtering 10min, at this moment glow discharge is basicly stable, and the impurity of target material surface is eliminated substantially, formal sputtering TiO2Thin film is to 150nm.
Five, take out substrate, close main power: after having sputtered, cut off shielding power supply switch, close argon switch, molecular pump, front step valve and mechanical pump, open vent valve, take out substrate.
The TiO of the ITO substrate that present embodiment prepares2The SEM of antireflection film schemes as shown in Figure 4, as shown in Figure 4: terminate through above-mentioned technique, forming nano rod porous structural film on ito glass surface, film layer structure is uniform, having certain orientation, different angles observe the catadioptric photo of gradual change of same thin film as shown in Figure 5.
Detailed description of the invention two: present embodiments provide for a kind of SiO2Substrate multilamellar SiO2/TiO2/Al2O3The preparation method of antireflection film, specifically comprises the following steps that
One, clean substrate: during cleaning, can clean according to the method for detailed description of the invention one, present embodiment uses concentrated sulphuric acid heated and boiled 10 minutes, take out after cleaning up, be positioned over dry for standby in vacuum drying oven.
Two, cleaning sputtering stove, adjusts sputtering angle, and places substrate: adjust substrate base adjusting bracket, its spacing distance with target is set to 8cm, adjusts substrate base adjusting bracket and become 80 ° of angles with target pedestal.
Three, evacuation: start mechanical pump, open simultaneously and pre-take out valve above sputtering stove, when gauge reaches predetermined value 2Pa, close and take out valve in advance, open front step valve, open molecular pump, when being evacuated to required vacuum 5e-4Pa, open radio frequency source main switch radio frequency source is preheated, open simultaneously and substrate is preheated to 100 DEG C.
Four, sputtering SiO2Thin film:
Open argon air accumulator and open effusion meter again, adjust Ar flow so that Ar flow is 27sccm, O2Flow is 3sccm, and oxygen and argon ratio are about 1:9.Opening charge valve afterwards, the air pressure in regulation push-pull valve switch to sputtering chamber is 5e-1Pa.Opening radio-frequency (RF) switch, plate voltage Ua is adjusted to 800V so that forward power is maximum, and backward power is minimum.Pre-sputtering 10min, sputters SiO2Thin film, the control time is to obtain required thickness.
Five, sputtering TiO2Thin film: open argon air accumulator and open effusion meter again, adjust Ar flow so that Ar flow is 27sccm, O2Flow is 3sccm, and oxygen and argon ratio are about 1:9.Opening charge valve afterwards, the air pressure in regulation push-pull valve to sputtering chamber is 5e-1Pa.Opening radio-frequency (RF) switch, plate voltage Ua is adjusted to 1200V.Pre-sputtering 10min, formal sputtering TiO2Thin film is to required thickness.
Six, sputtering Al2O3Thin film: open argon air accumulator and open effusion meter again, adjust Ar flow so that Ar flow is 30sccm.Opening charge valve afterwards, the air pressure in regulation push-pull valve switch to sputtering chamber is 5e-1Pa.Opening radio-frequency (RF) switch, plate voltage Ua is adjusted to 1200V, pre-sputtering 10min, formal sputtering Al2O3Thin film is to required thickness.
Seven, take out substrate, close main power: after having sputtered, cut off shielding power supply switch, close argon switch, molecular pump, front step valve and mechanical pump, open vent valve, take out substrate.
Claims (5)
1. the method that an oblique sputtering technique prepares graded index antireflective coating, it is characterised in that described method step is as follows:
One, substrate is cleaned；
Two, cleaning sputtering stove, places the substrate after cleaning, and adjusts substrate and lays angle, makes coated surface bias 0 ~ 90 ° of placement with vapor deposition source crucible；
Three, evacuation；
Four, sputter coating；
Five, after having sputtered, cut off shielding power supply switch, take out substrate.
The method that oblique sputtering technique the most according to claim 1 prepares graded index antireflective coating, it is characterised in that described substrate is optical glass, metallic substrates or polymer material substrate.
The method that oblique sputtering technique the most according to claim 1 prepares graded index antireflective coating, it is characterized in that described evacuation specifically comprises the following steps that startup mechanical pump, open simultaneously and pre-take out valve above sputtering stove, gauge reaches 1 ~ 10Pa, close and take out valve in advance, open front step valve, open molecular pump, it is evacuated to required vacuum 5e-3 ~ 1e-4 Pa, substrate is preheated.
The method that oblique sputtering technique the most according to claim 3 prepares graded index antireflective coating, it is characterised in that described substrate preheating temperature is 50 ~ 500 DEG C.
The method that oblique sputtering technique the most according to claim 1 prepares graded index antireflective coating, it is characterized in that described sputter coating specifically comprises the following steps that adjustment Ar flow 10 ~ 80 SCCM, control oxygen and argon volume ratio is 1:3 ~ 9, air pressure 0.5 ~ 5Pa in sputtering chamber, open Cathode Target Source baffle plate, regulation running voltage 300 ~ 1800V, carries out sputter coating.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107132604A (en) * | 2017-06-26 | 2017-09-05 | 中国工程物理研究院激光聚变研究中心 | Graded index films preparation parameter acquisition methods, preparation method and optical filter |
| CN108396291A (en) * | 2018-04-09 | 2018-08-14 | 东莞市瑞得光电科技有限公司 | It is a kind of to realize gradient color electro plating device and its film plating process using electron beam evaporation deposition machine |
| CN110129749A (en) * | 2019-05-13 | 2019-08-16 | 江西沃格光电股份有限公司 | Gradient color coated basal plate and preparation method thereof, film coating jig |
| CN111676459A (en) * | 2020-06-23 | 2020-09-18 | 中建材蚌埠玻璃工业设计研究院有限公司 | Preparation method of colorful BIPV thin-film solar cell |
| CN113140350A (en) * | 2021-03-29 | 2021-07-20 | 中国科学院长春光学精密机械与物理研究所 | Super-reflector and design method and preparation method thereof |
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| CN103069308A (en) * | 2010-08-02 | 2013-04-24 | 光州科学技术院 | Silicon multilayer anti-reflective film with gradually varying refractive index and manufacturing method therefor, and solar cell having same and manufacturing method therefor |
| CN104633972A (en) * | 2013-12-09 | 2015-05-20 | 康雪慧 | Selective coating adopting gradually-changing antireflection layer and preparation method thereof |
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- 2016-06-16 CN CN201610426332.5A patent/CN105951051A/en active Pending
Patent Citations (2)
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| CN103069308A (en) * | 2010-08-02 | 2013-04-24 | 光州科学技术院 | Silicon multilayer anti-reflective film with gradually varying refractive index and manufacturing method therefor, and solar cell having same and manufacturing method therefor |
| CN104633972A (en) * | 2013-12-09 | 2015-05-20 | 康雪慧 | Selective coating adopting gradually-changing antireflection layer and preparation method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107132604A (en) * | 2017-06-26 | 2017-09-05 | 中国工程物理研究院激光聚变研究中心 | Graded index films preparation parameter acquisition methods, preparation method and optical filter |
| CN107132604B (en) * | 2017-06-26 | 2020-01-14 | 中国工程物理研究院激光聚变研究中心 | Gradient refractive index film preparation parameter obtaining method, preparation method and optical filter |
| CN108396291A (en) * | 2018-04-09 | 2018-08-14 | 东莞市瑞得光电科技有限公司 | It is a kind of to realize gradient color electro plating device and its film plating process using electron beam evaporation deposition machine |
| CN110129749A (en) * | 2019-05-13 | 2019-08-16 | 江西沃格光电股份有限公司 | Gradient color coated basal plate and preparation method thereof, film coating jig |
| CN111676459A (en) * | 2020-06-23 | 2020-09-18 | 中建材蚌埠玻璃工业设计研究院有限公司 | Preparation method of colorful BIPV thin-film solar cell |
| CN113140350A (en) * | 2021-03-29 | 2021-07-20 | 中国科学院长春光学精密机械与物理研究所 | Super-reflector and design method and preparation method thereof |
| CN113140350B (en) * | 2021-03-29 | 2022-04-26 | 中国科学院长春光学精密机械与物理研究所 | Super-reflector and design method and preparation method thereof |
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Application publication date: 20160921 |