CN108816929A - The cleaning method of semi-finished product tantalum screw thread in a kind of tantalum target production process - Google Patents
The cleaning method of semi-finished product tantalum screw thread in a kind of tantalum target production process Download PDFInfo
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- CN108816929A CN108816929A CN201810552871.2A CN201810552871A CN108816929A CN 108816929 A CN108816929 A CN 108816929A CN 201810552871 A CN201810552871 A CN 201810552871A CN 108816929 A CN108816929 A CN 108816929A
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- tantalum
- cleaning method
- vacuum drying
- screw thread
- target
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000004140 cleaning Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000011265 semifinished product Substances 0.000 title claims abstract description 16
- 238000001291 vacuum drying Methods 0.000 claims abstract description 31
- 238000001035 drying Methods 0.000 claims abstract description 19
- 238000002525 ultrasonication Methods 0.000 claims abstract description 14
- 239000003599 detergent Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000001680 brushing effect Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 21
- 230000000694 effects Effects 0.000 abstract description 16
- 238000003466 welding Methods 0.000 abstract description 9
- 230000036632 reaction speed Effects 0.000 abstract description 5
- 238000003672 processing method Methods 0.000 abstract description 3
- 239000000047 product Substances 0.000 description 52
- 239000007788 liquid Substances 0.000 description 14
- 238000004851 dishwashing Methods 0.000 description 12
- 238000011010 flushing procedure Methods 0.000 description 9
- 238000004806 packaging method and process Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000012459 cleaning agent Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 231100000481 chemical toxicant Toxicity 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B7/00—Drying solid materials or objects by processes using a combination of processes not covered by a single one of groups F26B3/00 and F26B5/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
Abstract
The present invention provides a kind of cleaning methods of semi-finished product tantalum screw thread in tantalum target production process, include the following steps：(A) by after tantalum screw thread ultrasonication 3-10min, detergent is smeared on surface；(B) using scrub, drying, vacuum drying.Cleaning method of the invention is by comprehensively utilizing the processing methods such as ultrasonic wave, scrub, vacuum drying, more fine design can be carried out to the operation of cleaning process of included a tantalum target during manufacturing, eliminate dirty, the greasy dirt of tantalum thread surface, and the subsequent service performance of the target can be improved, improve its reaction speed in sputtering process, reduce the bit error rate, improve efficiency and improve the welding performance of included a tantalum target, although the therefore cleaning method simple process, but obvious processing effect, should be widely promoted application.
Description
Technical field
The present invention relates to tantalum targets to produce and process field, in particular to semi-finished product in a kind of tantalum target production process
The cleaning method of tantalum screw thread.
Background technique
PVD coating technique refers to using physical method, and material source-solid or liquid surface are gasificated into gaseous atom, divided
Son or partial ionization have certain special at ion, and by low-pressure gas (or plasma) process in matrix surface deposition
The technology of the film of function.The main method of physical vapour deposition (PVD) has, vacuum evaporation, sputter coating, arc-plasma plating, from
Sub- plated film and molecular beam epitaxy etc..Develop to currently, physical gas phase deposition technology not only can deposited metal film, alloy film, may be used also
With deposited compound, ceramics, semiconductor, polymer film etc..More commonly used is sputter coating technology.
Sputter coating technology is to be known as sputtering the phenomenon that using ion bombardment target material surface, be knocked off the atom of target.It splashes
The atomic deposition for penetrating generation is known as sputter coating in matrix surface film forming.Gas ionization usually is generated using gas discharge,
Cation high velocity bombardment cathode target body under electric field action, hits cathode target body atom or molecule, and it is heavy to fly to plated matrix surface
Product is at film.At present it has been developed that the higher radio-frequency sputtering of sputter rate, triode sputtering and magnetron sputtering technique.
Improve the rate of sputter coating, it is important to improve the sputtering raste of target, this must just improve the ionization of plasma
Degree, i.e., under identical discharge power, obtain more ions, in terms of the sputtering product of ion bombardment target surface, in addition to hitting original
Outside son or molecule, secondary electron is also hit, these electronics are collided and caused with gas atom or molecule after electric field acceleration
Gas ionization.The energy for making full use of secondary electron is the effective way for improving plasma degree of ionization.
Therefore, in the production process of semiconductor chip, either 8 cun of production lines in target as sputter, 12 cun of production lines are all
Included a tantalum target can be used, especially in sputtering process, tantalum ring cooperation tantalum target is will use and is used together, in sputtering process, included a tantalum target
Sputtering can be directly participated in, so can be relatively high to the welding requirements of included a tantalum target, it is seen that the performance of target directly decides sputter coating
The speed and quality of technology.A procedure of included a tantalum target during manufacturing is exactly tantalum thread cleaning, directly influences whether tantalum
The welding yield of target.But it is caused to sputter there is no the promotion for focusing on target performance itself in existing target production process
Bit error rate height, reaction speed are slow in journey.
In view of this, the present invention is specifically proposed.
Summary of the invention
The purpose of the present invention is to provide a kind of cleaning method of semi-finished product tantalum screw thread in tantalum target production process, this method
It, can be to included a tantalum target during manufacturing by comprehensively utilizing the processing methods such as ultrasonic wave, scrub, vacuum drying
The operation of cleaning process carries out more fine design, eliminates dirty, the greasy dirt of tantalum thread surface, and can improve the target
Subsequent service performance improves its reaction speed in sputtering process, reduces the bit error rate, improves efficiency and improve the weldering of included a tantalum target
Connect performance, although therefore the cleaning method simple process, obvious processing effect, should be widely promoted application.
In order to realize above-mentioned purpose of the invention, spy uses following technical scheme：
The present invention provides a kind of cleaning methods of semi-finished product tantalum screw thread in tantalum target production process, include the following steps：
(A) by after tantalum screw thread ultrasonication 3-10min, detergent is smeared on surface；
(B) using scrub, drying, vacuum drying.
In the prior art, in the production process of semiconductor chip, either 8 cun of production lines, 12 cun of lifes in target as sputter
Producing line can all use included a tantalum target, especially in sputtering process, will use tantalum ring cooperation tantalum target and be used together, in sputtering process
In, included a tantalum target can directly participate in sputtering, so can be relatively high to the welding requirements of included a tantalum target, it is seen that the performance of target, which directly decides, splashes
Penetrate the speed and quality of coating technique.A procedure of included a tantalum target during manufacturing is exactly tantalum thread cleaning, directly understands shadow
Ring the welding yield for arriving included a tantalum target.But lead to it there is no the promotion for focusing on target performance itself in existing target production process
Bit error rate height, reaction speed are slow in sputtering process.
In order to solve the above technical problems, The present invention provides one kind in tantalum target actual production process semi-finished product tantalum spiral shell
The cleaning method of line, after tantalum screw thread is first carried out ultrasonication for a period of time first by this method, then in surface smearing cleaning agent
Constantly scrubbed, scrub later generally using air gun dried up by the moisture removal on surface it is clean after, last vacuum is dry
It is dry.The above method is easy to operate, can achieve strength and removes the effect of surface and oil contaminant, and improves tantalum target and splash subsequent
Penetrate the performance in application process.The bit error rate is reduced, the welding performance of included a tantalum target is improved efficiency and improve.
Further, during ultrasonication, temperature is controlled at 80 DEG C or more.
Further, it during ultrasonication, is mixed and is handled with detergent using hot water.
Further, the time of ultrasonication is 4-6min, is more preferably 5min.
Further, smearing the method scrubbed after the detergent includes：After being brushed 3-4 times from inside to outside repeatedly using brush
It is rinsed 30-60s again.
Further, it rinses using giant.
Further, vacuum drying time control is in 30min or more.
Further, vacuum drying time control is between 40-60min.
Further, vacuum drying temperature control is between 300-400 DEG C.
Further, vacuum drying vacuum degree control is in 100Pa or less.
Compared with prior art, beneficial effects of the present invention are：
(1) cleaning method of the invention is by comprehensively utilizing the processing methods such as ultrasonic wave, scrub, vacuum drying,
More fine design can be carried out to the operation of cleaning process of included a tantalum target during manufacturing, eliminate tantalum thread surface
Dirty, greasy dirt, and the subsequent service performance of the target can be improved, improve its reaction speed in sputtering process, reduced and miss
Code rate improves efficiency and improves the welding performance of included a tantalum target；
(2) cleaning method of the invention itself simple process, operating condition is mild, and environmental restrictions are small, entire cleaning process
In do not use any toxic chemical, there is no any injury to operator's body, sufficiently it is environmentally protective.
Specific embodiment
Embodiment of the present invention is described in detail below in conjunction with embodiment, but those skilled in the art will
Understand, the following example is merely to illustrate the present invention, and is not construed as limiting the scope of the invention.It is not specified in embodiment specific
Condition person carries out according to conventional conditions or manufacturer's recommended conditions.Reagents or instruments used without specified manufacturer is
The conventional products that can be obtained by commercially available purchase.
The present invention provides a kind of cleaning methods of semi-finished product tantalum screw thread in tantalum target production process, include the following steps：
(A) by after tantalum screw thread ultrasonication 3-10min, detergent is smeared on surface；
(B) using scrub, drying, vacuum drying.
After tantalum screw thread is first carried out ultrasonication for a period of time first by above-mentioned cleaning method, then in surface smearing cleaning agent
Constantly scrubbed, scrub later generally using air gun dried up by the moisture removal on surface it is clean after, last vacuum is dry
It is dry.The above method is easy to operate, can achieve strength and removes the effect of surface and oil contaminant, and improves tantalum target and splash subsequent
Penetrate the performance in application process.The bit error rate is reduced, the welding performance of included a tantalum target is improved efficiency and improve.
Further, in order to improve the effect of cleaning, during ultrasonication, preferably by temperature control 80 DEG C with
On.And due to being carried out in ultrasound machine, the liquid selective for impregnating tantalum screw thread is used to mix for hot water with detergent
It is handled, can more improve cleaning effect in this way.
Further, the time of ultrasonication is 4-6min, is more preferably 5min.The time control of ultrasonic cleaning exists
It can reach good effect within 10min, in addition to this it is possible to for 7min, 8min, 9min etc..
In ultrasonic wave take out ultrasound after product be preferably put into specified position every time, not leave about, avoid by
Pollution.
Further, smearing the method scrubbed after the detergent includes：After being brushed 3-4 times from inside to outside repeatedly using brush
It is rinsed 30-60s again.Brush avoids in this way to have tantalum thread surface using bristle preferably with fur is compared
Any scuffing, relatively safety.Uniform scrub 3-4 times repeatedly from inside to outside of looping when practical operation can carry out next flushing
Step.
The amount general control smeared when smearing cleaning agent smears the cleaning of general 200-300ml on the surface of each tantalum screw thread
Agent.
There is no concrete restrictions for the type of detergent employed in the above process, as long as it is more excellent to be commercially available cleaning effect
Cleaning agent, such as common dish detergent.
Further, it rinses using giant.Giant pressure is big, and flushing facilitates clean.
After giant rinses, preliminarily dried is generally achieved the purpose that using air gun drying, at this time and equally, is put into finger
Fixed position not leave about, and avoid being contaminated.
Finally, the vacuum drying time is preferably controlled in 30min or more.The product of drying is preferably put into rapidly drying machine
It is dried in vacuo.It avoids product from contacting with air for a long time to aoxidize.
It is highly preferred that vacuum drying time control is between 40-60min.
Further, vacuum drying temperature control is between 300-400 DEG C.
Further, vacuum drying vacuum degree control is in 100Pa or less.
After vacuum drying, takes out product and packaged.
The solution of the present invention is illustrated below by specific embodiment：
Embodiment 1
The cleaning method of semi-finished product tantalum screw thread includes the following steps in tantalum target production process：
1) it is filled to gauge wire in ultrasonic wave, tantalum screw product is put into ultrasound machine and shakes 5min；
2) after shaking 5min, product is taken out in ultrasonic wave, is put into designated position, 200-300ml dish washing liquid is uniformly smeared
In product surface；
3) it is brushed 3-4 times with brush, is then rinsed using giant repeatedly from inside to outside；
4) product after flushing is placed on designated position, uses air gun to be dried up to remove aqueous vapor, reaches preliminarily dried
Effect；
5) product contact with air and is aoxidized for a long time in order to prevent, and the product of drying is put into rapidly drying machine progress
Vacuum drying；
6) after being dried in vacuo, product packaging is taken out.
Embodiment 2
The cleaning method of semi-finished product tantalum screw thread includes the following steps in tantalum target production process：
1) it is filled to gauge wire in ultrasonic wave, 50ml-100ml dish washing liquid is added, is pre-heated to 80 DEG C for tantalum screw product
It is put into ultrasonic wave and shakes 10min；
2) after shaking 10min, product is taken out in ultrasonic wave, is put into designated position, 200-300ml dish washing liquid is uniformly smeared
In product surface；
3) it is brushed repeatedly from inside to outside 3-4 times with brush, then rinses 40s using giant；
4) product after flushing is placed on designated position, uses air gun to be dried up to remove aqueous vapor, reaches preliminarily dried
Effect；
5) tantalum screw product is contacted with air and is aoxidized for a long time in order to prevent, and the product of drying is put into rapidly drying
Machine carries out vacuum drying 30min, and vacuum drying vacuum degree is 100Pa, and temperature is 400 DEG C；
6) after being dried in vacuo 30min, product packaging is taken out.
Embodiment 3
The cleaning method of semi-finished product tantalum screw thread includes the following steps in tantalum target production process：
1) it is filled to gauge wire in ultrasonic wave, 50ml-100ml dish washing liquid is added, is pre-heated to 90 DEG C for tantalum screw product
It is put into ultrasonic wave and shakes 4min；
2) after shaking 4min, product is taken out in ultrasonic wave, is put into designated position, 200-300ml dish washing liquid is uniformly smeared
In product surface；
3) it is brushed repeatedly from inside to outside 3-4 times with brush, then rinses 50s using giant；
4) product after flushing is placed on designated position, uses air gun to be dried up to remove aqueous vapor, reaches preliminarily dried
Effect；
5) tantalum screw product is contacted with air and is aoxidized for a long time in order to prevent, and the product of drying is put into rapidly drying
Machine carries out vacuum drying 40min, and vacuum drying vacuum degree is 120Pa, and temperature is 350 DEG C；
6) after being dried in vacuo 40min, product packaging is taken out.
Embodiment 4
The cleaning method of semi-finished product tantalum screw thread includes the following steps in tantalum target production process：
1) it is filled to gauge wire in ultrasonic wave, 50ml-100ml dish washing liquid is added, is pre-heated to 95 DEG C for tantalum screw product
It is put into ultrasonic wave and shakes 6min；
2) after shaking 6min, product is taken out in ultrasonic wave, is put into designated position, 200-300ml dish washing liquid is uniformly smeared
In product surface；
3) it is brushed repeatedly from inside to outside 3-4 times with brush, then rinses 40s using giant；
4) product after flushing is placed on designated position, uses air gun to be dried up to remove aqueous vapor, reaches preliminarily dried
Effect；
5) tantalum screw product is contacted with air and is aoxidized for a long time in order to prevent, and the product of drying is put into rapidly drying
Machine carries out vacuum drying 60min, and vacuum drying vacuum degree is 130Pa, and temperature is 300 DEG C；
6) after being dried in vacuo 60min, product packaging is taken out.
Embodiment 5
The cleaning method of semi-finished product tantalum screw thread includes the following steps in tantalum target production process：
1) it is filled to gauge wire in ultrasonic wave, 50ml-100ml dish washing liquid is added, is pre-heated to 95 DEG C for tantalum screw product
It is put into ultrasonic wave and shakes 8min；
2) after shaking 8min, product is taken out in ultrasonic wave, is put into designated position, 200-300ml dish washing liquid is uniformly smeared
In product surface；
3) it is brushed repeatedly from inside to outside 3-4 times with brush, then rinses 50s using giant；
4) product after flushing is placed on designated position, uses air gun to be dried up to remove aqueous vapor, reaches preliminarily dried
Effect；
5) tantalum screw product is contacted with air and is aoxidized for a long time in order to prevent, and the product of drying is put into rapidly drying
Machine carries out vacuum drying 50min, and vacuum drying vacuum degree is 130Pa, and temperature is 320 DEG C；
6) after being dried in vacuo 50min, product packaging is taken out.
Comparative example 1
The cleaning method of semi-finished product tantalum screw thread includes the following steps in tantalum target production process：
1) on tantalum screw product surface, product surface is uniformly applied to using 200-300ml dish washing liquid；
2) it is brushed repeatedly from inside to outside 3-4 times with brush, then rinses 50s using giant；
3) product after flushing is placed on designated position, uses air gun to be dried up to remove aqueous vapor, reaches preliminarily dried
Effect；
4) tantalum screw product is contacted with air and is aoxidized for a long time in order to prevent, and the product of drying is put into rapidly drying
Machine carries out vacuum drying 50min, and vacuum drying vacuum degree is 130Pa, and temperature is 320 DEG C；
5) after being dried in vacuo 50min, product packaging is taken out.
Comparative example 2
The cleaning method of semi-finished product tantalum screw thread includes the following steps in tantalum target production process：
1) it is filled to gauge wire in ultrasonic wave, 50ml-100ml dish washing liquid is added, is pre-heated to 95 DEG C for tantalum screw product
It is put into ultrasonic wave and shakes 8min；
2) after shaking 8min, product is taken out in ultrasonic wave, is put into designated position, 200-300ml dish washing liquid is uniformly smeared
In product surface；
3) it is brushed repeatedly from inside to outside 3-4 times with brush, then rinses 50s using giant；
4) product after flushing is placed on designated position, uses air gun to be dried up to remove aqueous vapor, reach dry effect
Fruit, by product packaging.
Experimental example 1
The tantalum screw thread that the cleaning method of the cleaning method of 1-5 of the embodiment of the present invention and comparative example 1-2 is cleaned it is clean
Net degree and performance compare, and concrete outcome is shown in such as the following table 1：
1 results of property of table
| Group | Surface cleanliness | Welding performance | The bit error rate (%) |
| Embodiment 1 | It is bright as new without any spot | It is excellent | 0 |
| Embodiment 2 | It is bright as new without any spot | It is excellent | 0 |
| Embodiment 3 | It is bright as new without any spot | It is excellent | 0 |
| Embodiment 4 | It is bright as new without any spot | It is excellent | 0 |
| Embodiment 5 | It is bright as new without any spot | It is excellent | 0 |
| Comparative example 1 | There is a little spot point on surface | It is good | 20 |
| Comparative example 2 | There is a little spot point on surface | It is good | 20 |
The cleaning method that can be seen that the embodiment of the present invention from the result of above-mentioned table 1 is not only able to guarantee the cleaning of target
Degree, moreover it is possible to promote its performance, significant effect.
Although illustrate and describing the present invention with specific embodiment, it will be appreciated that without departing substantially from of the invention
Many other change and modification can be made in the case where spirit and scope.It is, therefore, intended that in the following claims
Including belonging to all such changes and modifications in the scope of the invention.
Claims (10)
1. the cleaning method of semi-finished product tantalum screw thread in a kind of tantalum target production process, which is characterized in that include the following steps：
(A) by after tantalum screw thread ultrasonication 3-10min, detergent is smeared on surface；
(B) using scrub, drying, vacuum drying.
2. cleaning method according to claim 1, which is characterized in that in the step (A), during ultrasonication,
Temperature is controlled at 80 DEG C or more.
3. cleaning method according to claim 2, which is characterized in that in the step (A), during ultrasonication,
It is mixed and is handled with detergent using hot water.
4. cleaning method according to claim 2, which is characterized in that in the step (A), the time of ultrasonication is
4-6min is more preferably 5min.
5. cleaning method according to claim 1-4, which is characterized in that in the step (B), smear described clear
The method scrubbed after clean dose includes：It is rinsed 30-60s again after brushing 3-4 times from inside to outside repeatedly using brush.
6. cleaning method according to claim 5, which is characterized in that in the step (B), rinse using high pressure water
Rifle.
7. cleaning method according to claim 1-4, which is characterized in that vacuum drying in the step (B)
Time controls in 30min or more.
8. cleaning method according to claim 7, which is characterized in that in the step (B), vacuum drying time control
Between 40-60min.
9. cleaning method according to claim 1-4, which is characterized in that vacuum drying in the step (B)
Temperature controls between 300-400 DEG C.
10. cleaning method according to claim 1-4, which is characterized in that in the step (B), vacuum drying
Vacuum degree control in 100Pa or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810552871.2A CN108816929A (en) | 2018-05-31 | 2018-05-31 | The cleaning method of semi-finished product tantalum screw thread in a kind of tantalum target production process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110670083A (en) * | 2019-11-08 | 2020-01-10 | 宁波江丰电子材料股份有限公司 | Target cleaning method |
| CN111570390A (en) * | 2020-05-19 | 2020-08-25 | 宁波江丰电子材料股份有限公司 | Treatment method of tantalum part in glow discharge mass spectrometer |
| CN112495916A (en) * | 2020-11-04 | 2021-03-16 | 上海江丰平芯电子科技有限公司 | Cleaning method of chemical mechanical polishing retaining ring |
| CN114887963A (en) * | 2022-04-29 | 2022-08-12 | 宁波江丰电子材料股份有限公司 | Method for cleaning titanium target material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6462463A (en) * | 1987-09-01 | 1989-03-08 | Seiko Epson Corp | Method for cleaning sputtering target |
| CN101492808A (en) * | 2009-02-18 | 2009-07-29 | 颀中科技（苏州）有限公司 | Surface treatment process for square TiW target material for sputtering |
| CN101724818A (en) * | 2009-11-17 | 2010-06-09 | 宁波江丰电子材料有限公司 | Method for cleaning copper or copper alloy sputtering target material |
-
2018
- 2018-05-31 CN CN201810552871.2A patent/CN108816929A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6462463A (en) * | 1987-09-01 | 1989-03-08 | Seiko Epson Corp | Method for cleaning sputtering target |
| CN101492808A (en) * | 2009-02-18 | 2009-07-29 | 颀中科技（苏州）有限公司 | Surface treatment process for square TiW target material for sputtering |
| CN101724818A (en) * | 2009-11-17 | 2010-06-09 | 宁波江丰电子材料有限公司 | Method for cleaning copper or copper alloy sputtering target material |
Non-Patent Citations (2)
| Title |
|---|
| 刘峰璧: "《机械设备润滑》", 31 March 2016 * |
| 杨林建: "《机械设备自动化改造》", 31 July 2015 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110670083A (en) * | 2019-11-08 | 2020-01-10 | 宁波江丰电子材料股份有限公司 | Target cleaning method |
| CN111570390A (en) * | 2020-05-19 | 2020-08-25 | 宁波江丰电子材料股份有限公司 | Treatment method of tantalum part in glow discharge mass spectrometer |
| CN112495916A (en) * | 2020-11-04 | 2021-03-16 | 上海江丰平芯电子科技有限公司 | Cleaning method of chemical mechanical polishing retaining ring |
| CN114887963A (en) * | 2022-04-29 | 2022-08-12 | 宁波江丰电子材料股份有限公司 | Method for cleaning titanium target material |
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Application publication date: 20181116 |