CN113751414A - Ultra-high clean cleaning process for semiconductor aluminum alloy parts - Google Patents
Ultra-high clean cleaning process for semiconductor aluminum alloy parts Download PDFInfo
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- CN113751414A CN113751414A CN202010983444.7A CN202010983444A CN113751414A CN 113751414 A CN113751414 A CN 113751414A CN 202010983444 A CN202010983444 A CN 202010983444A CN 113751414 A CN113751414 A CN 113751414A
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- aluminum alloy
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- 238000004140 cleaning Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000001035 drying Methods 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 26
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000008399 tap water Substances 0.000 claims abstract description 20
- 235000020679 tap water Nutrition 0.000 claims abstract description 20
- 238000005406 washing Methods 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000012530 fluid Substances 0.000 claims abstract description 7
- 238000001291 vacuum drying Methods 0.000 claims abstract description 7
- 238000005237 degreasing agent Methods 0.000 claims description 42
- 239000013527 degreasing agent Substances 0.000 claims description 42
- 239000000243 solution Substances 0.000 claims description 20
- 238000005507 spraying Methods 0.000 claims description 18
- 238000011086 high cleaning Methods 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 238000011010 flushing procedure Methods 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000003223 protective agent Substances 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005238 degreasing Methods 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
The invention discloses an ultra-high clean cleaning process for a semiconductor aluminum alloy part, which comprises the following steps: ultrasonically cleaning parts to be treated by cleaning fluid, and then washing by tap water; washing the washed parts for the second time, and then washing the parts by using tap water; then, immersing the parts into the rust removing liquid for 5-8 minutes; after rust removal, carrying out passivation operation, and then cleaning with a passivation solution diluted to 3-5%; then, washing the cleaned parts by a water spray gun; drying the sprayed parts by adopting vacuum drying, and oiling the dried parts; secondary drying is carried out; the parts are pre-cleaned, oil stains and dirt in the holes are mainly removed, the oil stains are removed after degreasing treatment, rust removal is carried out through the rust removing liquid, so that the cleanness of the parts is guaranteed, the cleaning effect is good, the parts are washed, dried and oiled, damage is avoided, the requirements of customers are met, and the yield is improved.
Description
Technical Field
The invention relates to the technical field of part cleaning, in particular to an ultrahigh-cleaning process for a semiconductor aluminum alloy part.
Background
The semiconductor is a substance with conductivity between an insulator and a conductor, the conductivity of the semiconductor is easy to control, and the semiconductor can be used as an element material for information processing; semiconductors are very important from the viewpoint of technological or economic development.
The aluminum alloy is an important material used by semiconductor etching equipment, and most key parts of a reaction chamber are made of the aluminum alloy; according to design requirements, some surfaces of the parts need to be subjected to surface treatment, such as hard anodic oxidation, plasma spraying, conductive oxidation, brushing nickel and the like, and some surfaces of the parts directly adopt aluminum metal surfaces; in the manufacturing process of an integrated circuit, aluminum alloy parts need to be cleaned periodically, the quality of the cleaned parts is related to whether an etching process can be normally carried out, and at present, water marks (water marks) are a problem frequently occurring in the cleaning of the aluminum alloy parts.
The existing method for cleaning the semiconductor aluminum alloy parts is complex, labor-consuming and time-consuming, and the cleaning effect is not obvious.
Disclosure of Invention
The invention aims to provide an ultra-high cleaning process for a semiconductor aluminum alloy part, which solves the problems of complex method, labor and time waste and unobvious cleaning effect of the conventional cleaning process for the semiconductor aluminum alloy part.
The invention is realized in this way, a semiconductor aluminum alloy part ultra-high cleaning process, which comprises the following steps:
firstly, ultrasonically cleaning parts to be treated by cleaning fluid, and then washing by tap water;
secondly, cleaning the cleaned parts for the second time, controlling the water temperature to be 50-65 ℃ and the cleaning time to be 8-15 minutes; then, flushing with tap water;
step three, immersing the parts processed in the step two into a rust removing liquid for 5-8 minutes; after rust removal, carrying out passivation operation, placing the parts in a passivation solution with the concentration of 12-20%, and cleaning the parts by using the passivation solution diluted to 3-5% after passivation;
step four, washing the parts cleaned in the step three by a water gun;
drying the sprayed parts by adopting vacuum drying, and oiling the dried parts; and then secondary drying is carried out.
The further technical scheme of the invention is as follows: in the first step, ultrasonic cleaning is carried out for 2-5 min, the cleaning temperature is 62-75 ℃, the ultrasonic frequency is 40KHz, and the ultrasonic power is 1000W.
The further technical scheme of the invention is as follows: and the tap water in the first step and the second step is washed for 3-5 min, and the washing pressure is 0.15-0.25 MPa.
The further technical scheme of the invention is as follows: the cleaning solution for secondary cleaning in the second step is an aqueous solution containing a degreasing agent, wherein the mass fraction of the degreasing agent is 6.0-9.5%; the degreasing agent is a compound mixture of a degreasing agent FC-301S and a degreasing agent FC-4371M.
The further technical scheme of the invention is as follows: the mass ratio of the degreasing agent FC-301S to the degreasing agent FC-4371M is 1: 1.20 to 1.50.
The further technical scheme of the invention is as follows: the rust removing liquid in the third step comprises the following components: 3% of hydrofluoric acid, 20% of nitric acid, a protective agent and water are mixed according to the weight ratio of 2: 1: 1: 18 by weight ratio.
The further technical scheme of the invention is as follows: the pressure of the water spraying gun in the fourth step is 50-58 bar, and the water spraying distance is as follows: 150-300 mm.
The further technical scheme of the invention is as follows: oiling in the step five is as follows: and oiling the parts in a spraying mode.
The further technical scheme of the invention is as follows: and drying in the fifth step and drying in the second step for 3-10 min under the conditions that the vacuum degree is-100 to-80 KPa and the temperature is 90-100 ℃.
The invention has the beneficial effects that: the invention has simple process, good cleaning effect on the aluminum alloy parts, high efficiency and can meet the requirement of cleanliness, wherein the parts are pre-cleaned by an ultrasonic cleaner, oil stains and dirt in holes are mainly removed, the oil stains are removed after degreasing treatment, and rust removal is carried out by a rust removing liquid, so that the cleanness of the parts is ensured, the parts are dried and oiled after washing, damage is avoided, the requirement of customers is met, and the yield is improved.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
An ultra-high cleaning process for semiconductor aluminum alloy parts comprises the following steps:
firstly, ultrasonically cleaning parts to be treated by cleaning fluid, and then washing by tap water;
secondly, cleaning the cleaned parts for the second time, controlling the water temperature to be 50-65 ℃ and the cleaning time to be 8-15 minutes; then, flushing with tap water;
step three, immersing the parts processed in the step two into a rust removing liquid for 5-8 minutes; after rust removal, carrying out passivation operation, placing the parts in a passivation solution with the concentration of 12-20%, and cleaning the parts by using the passivation solution diluted to 3-5% after passivation;
step four, washing the parts cleaned in the step three by a water gun;
drying the sprayed parts by adopting vacuum drying, and oiling the dried parts; and then secondary drying is carried out.
In the first step, ultrasonic cleaning is carried out for 2-5 min, the cleaning temperature is 62-75 ℃, the ultrasonic frequency is 40KHz, and the ultrasonic power is 1000W.
And the tap water in the first step and the second step is washed for 3-5 min, and the washing pressure is 0.15-0.25 MPa.
The cleaning solution for secondary cleaning in the second step is an aqueous solution containing a degreasing agent, wherein the mass fraction of the degreasing agent is 6.0-9.5%; the degreasing agent is a compound mixture of a degreasing agent FC-301S and a degreasing agent FC-4371M.
The mass ratio of the degreasing agent FC-301S to the degreasing agent FC-4371M is 1: 1.20 to 1.50.
The rust removing liquid in the third step comprises the following components: 3% of hydrofluoric acid, 20% of nitric acid, a protective agent and water are mixed according to the weight ratio of 2: 1: 1: 18 by weight ratio.
The pressure of the water spraying gun in the fourth step is 50-58 bar, and the water spraying distance is as follows: 150-300 mm.
Oiling in the step five is as follows: and oiling the parts in a spraying mode.
And drying in the fifth step and drying in the second step for 3-10 min under the conditions that the vacuum degree is-100 to-80 KPa and the temperature is 90-100 ℃.
The first embodiment is as follows:
an ultra-high cleaning process for semiconductor aluminum alloy parts comprises the following steps:
firstly, ultrasonically cleaning parts to be treated by cleaning fluid, and then washing by tap water;
secondly, cleaning the cleaned parts for the second time, controlling the water temperature at 50 ℃ and the cleaning time to be 8 minutes; then, flushing with tap water;
step three, immersing the parts processed in the step two into a derusting solution for 5 minutes; after rust removal, carrying out passivation operation, placing the parts in a passivation solution with the concentration of 12%, and cleaning the parts by using the passivation solution diluted to 3% after passivation;
step four, washing the parts cleaned in the step three by a water gun;
drying the sprayed parts by adopting vacuum drying, and oiling the dried parts; and then secondary drying is carried out.
And in the first step, ultrasonic cleaning is carried out for 2min, the cleaning temperature is 62 ℃, wherein the ultrasonic frequency is 40KHz, and the ultrasonic power is 1000W.
Tap water is flushed in the first step and the second step for 3min, and the flushing pressure is 0.15 MPa.
The cleaning solution for secondary cleaning in the second step is an aqueous solution containing a degreasing agent, wherein the mass fraction of the degreasing agent is 6.0%; the degreasing agent is a compound mixture of a degreasing agent FC-301S and a degreasing agent FC-4371M.
The mass ratio of the degreasing agent FC-301S to the degreasing agent FC-4371M is 1: 1.20.
the rust removing liquid in the third step comprises the following components: 3% of hydrofluoric acid, 20% of nitric acid, a protective agent and water are mixed according to the weight ratio of 2: 1: 1: 18 by weight ratio.
The pressure of the water spraying gun in the fourth step is 50bar, and the water spraying distance is as follows: 150 mm.
Oiling in the step five is as follows: and oiling the parts in a spraying mode.
And drying in the fifth step and drying in the second step for 3min under the conditions that the vacuum degree is-100 KPa and the temperature is 90 ℃.
Example two:
an ultra-high cleaning process for semiconductor aluminum alloy parts comprises the following steps:
firstly, ultrasonically cleaning parts to be treated by cleaning fluid, and then washing by tap water;
secondly, cleaning the cleaned parts for the second time, controlling the water temperature to be 55 ℃ and the cleaning time to be 10 minutes; then, flushing with tap water;
step three, immersing the parts processed in the step two into a derusting solution for 6 minutes; after rust removal, carrying out passivation operation, placing the parts in a passivation solution with the concentration of 15%, and cleaning the parts by using the passivation solution diluted to 4% after passivation;
step four, washing the parts cleaned in the step three by a water gun;
drying the sprayed parts by adopting vacuum drying, and oiling the dried parts; and then secondary drying is carried out.
And in the first step, ultrasonic cleaning is carried out for 4min, the cleaning temperature is 70 ℃, wherein the ultrasonic frequency is 40KHz, and the ultrasonic power is 1000W.
Tap water is flushed in the first step and the second step for 4min, and the flushing pressure is 0.20 MPa.
The cleaning solution for secondary cleaning in the second step is an aqueous solution containing a degreasing agent, wherein the mass fraction of the degreasing agent is 8.0%; the degreasing agent is a compound mixture of a degreasing agent FC-301S and a degreasing agent FC-4371M.
The mass ratio of the degreasing agent FC-301S to the degreasing agent FC-4371M is 1: 1.40.
the rust removing liquid in the third step comprises the following components: 3% of hydrofluoric acid, 20% of nitric acid, a protective agent and water are mixed according to the weight ratio of 2: 1: 1: 18 by weight ratio.
The pressure of the water spraying gun in the fourth step is 55bar, the water spraying distance is as follows: 220 mm.
Oiling in the step five is as follows: and oiling the parts in a spraying mode.
And drying in the fifth step and drying in the second step for 8min under the conditions that the vacuum degree is-90 KPa and the temperature is 95 ℃.
Example three:
an ultra-high cleaning process for semiconductor aluminum alloy parts comprises the following steps:
firstly, ultrasonically cleaning parts to be treated by cleaning fluid, and then washing by tap water;
secondly, cleaning the cleaned parts for the second time, controlling the water temperature at 65 ℃ and the cleaning time to be 15 minutes; then, flushing with tap water;
step three, immersing the parts processed in the step two into a rust removing liquid for 8 minutes; after rust removal, carrying out passivation operation, placing the parts in a passivation solution with the concentration of 20%, and cleaning the parts by using the passivation solution diluted to 5% after passivation;
step four, washing the parts cleaned in the step three by a water gun;
drying the sprayed parts by adopting vacuum drying, and oiling the dried parts; and then secondary drying is carried out.
And in the first step, ultrasonic cleaning is carried out for 5min, the cleaning temperature is 75 ℃, wherein the ultrasonic frequency is 40KHz, and the ultrasonic power is 1000W.
Tap water is flushed in the first step and the second step for 5min, and the flushing pressure is 0.25 MPa.
The cleaning solution for secondary cleaning in the second step is an aqueous solution containing a degreasing agent, wherein the mass fraction of the degreasing agent is 9.5%; the degreasing agent is a compound mixture of a degreasing agent FC-301S and a degreasing agent FC-4371M.
The mass ratio of the degreasing agent FC-301S to the degreasing agent FC-4371M is 1: 1.50.
the rust removing liquid in the third step comprises the following components: 3% of hydrofluoric acid, 20% of nitric acid, a protective agent and water are mixed according to the weight ratio of 2: 1: 1: 18 by weight ratio.
The pressure of the water spraying gun in the fourth step is 58bar, and the water spraying distance is as follows: 300 mm.
Oiling in the step five is as follows: and oiling the parts in a spraying mode.
And drying in the fifth step and drying in the second step for 10min under the conditions that the vacuum degree is-80 KPa and the temperature is 100 ℃.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. An ultra-high cleaning process for semiconductor aluminum alloy parts is characterized in that: the cleaning process comprises the following steps:
firstly, ultrasonically cleaning parts to be treated by cleaning fluid, and then washing by tap water;
secondly, cleaning the cleaned parts for the second time, controlling the water temperature to be 50-65 ℃ and the cleaning time to be 8-15 minutes; then, flushing with tap water;
step three, immersing the parts processed in the step two into a rust removing liquid for 5-8 minutes; after rust removal, carrying out passivation operation, placing the parts in a passivation solution with the concentration of 12-20%, and cleaning the parts by using the passivation solution diluted to 3-5% after passivation;
step four, washing the parts cleaned in the step three by a water gun;
drying the sprayed parts by adopting vacuum drying, and oiling the dried parts; and then secondary drying is carried out.
2. The ultra-high cleaning process for the semiconductor aluminum alloy parts as claimed in claim 1, wherein the cleaning process comprises the following steps: in the first step, ultrasonic cleaning is carried out for 2-5 min, the cleaning temperature is 62-75 ℃, the ultrasonic frequency is 40KHz, and the ultrasonic power is 1000W.
3. The ultra-high cleaning process for the semiconductor aluminum alloy parts as claimed in claim 1, wherein the cleaning process comprises the following steps: and the tap water in the first step and the second step is washed for 3-5 min, and the washing pressure is 0.15-0.25 MPa.
4. The ultra-high cleaning process for the semiconductor aluminum alloy parts as claimed in claim 1, wherein the cleaning process comprises the following steps: the cleaning solution for secondary cleaning in the second step is an aqueous solution containing a degreasing agent, wherein the mass fraction of the degreasing agent is 6.0-9.5%; the degreasing agent is a compound mixture of a degreasing agent FC-301S and a degreasing agent FC-4371M.
5. The ultra-high cleaning process for the semiconductor aluminum alloy parts as claimed in claim 4, wherein the cleaning process comprises the following steps: the mass ratio of the degreasing agent FC-301S to the degreasing agent FC-4371M is 1: 1.20 to 1.50.
6. The ultra-high cleaning process for the semiconductor aluminum alloy parts as claimed in claim 1, wherein the cleaning process comprises the following steps: the rust removing liquid in the third step comprises the following components: 3% of hydrofluoric acid, 20% of nitric acid, a protective agent and water are mixed according to the weight ratio of 2: 1: 1: 18 by weight ratio.
7. The ultra-high cleaning process for the semiconductor aluminum alloy parts as claimed in claim 1, wherein the cleaning process comprises the following steps: the pressure of the water spraying gun in the fourth step is 50-58 bar, and the water spraying distance is as follows: 150-300 mm.
8. The ultra-high cleaning process for the semiconductor aluminum alloy parts as claimed in claim 1, wherein the cleaning process comprises the following steps: oiling in the step five is as follows: and oiling the parts in a spraying mode.
9. The ultra-high cleaning process for the semiconductor aluminum alloy parts as claimed in claim 1, wherein the cleaning process comprises the following steps: and drying in the fifth step and drying in the second step for 3-10 min under the conditions that the vacuum degree is-100 to-80 KPa and the temperature is 90-100 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010983444.7A CN113751414A (en) | 2020-09-18 | 2020-09-18 | Ultra-high clean cleaning process for semiconductor aluminum alloy parts |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010983444.7A CN113751414A (en) | 2020-09-18 | 2020-09-18 | Ultra-high clean cleaning process for semiconductor aluminum alloy parts |
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| CN202010983444.7A Pending CN113751414A (en) | 2020-09-18 | 2020-09-18 | Ultra-high clean cleaning process for semiconductor aluminum alloy parts |
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Application publication date: 20211207 |