CN108149210B - Preparation method of long-wave infrared anti-reflection protective film - Google Patents

Preparation method of long-wave infrared anti-reflection protective film Download PDF

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CN108149210B
CN108149210B CN201711434621.0A CN201711434621A CN108149210B CN 108149210 B CN108149210 B CN 108149210B CN 201711434621 A CN201711434621 A CN 201711434621A CN 108149210 B CN108149210 B CN 108149210B
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substrate material
protective film
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CN108149210A (en
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朱嘉琦
杨振怀
杨磊
代兵
高岗
王鹏
郭帅
耿芳娟
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Harbin Institute of Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides

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Abstract

The invention discloses a preparation method of a long-wave infrared anti-reflection protective film, and relates to a preparation method of an anti-reflection protective film. The invention aims to solve the problems that the optical performance of the film is reduced due to the serious performance degradation phenomenon of the anti-reflection protective film of the window material of the existing infrared detection system in the service process, or the anti-reflection protective film has poor adhesion with a substrate, a transition layer needs to be deposited, the process complexity is increased, or the hardness of the anti-reflection protective film is lower. The method comprises the following steps: firstly, cleaning a target material and a window; secondly, preparing before film coating; thirdly, preparing Gd by adopting a reactive sputtering mode2O3A film; fourthly, ending shutdown; fifthly, coating films on two sides to finish the preparation method of the long-wave infrared anti-reflection protective film. The invention is used for the preparation method of the long-wave infrared anti-reflection protective film.

Description

Preparation method of long-wave infrared anti-reflection protective film
Technical Field
The invention relates to a preparation method of an anti-reflection protective film.
Background
When the infrared detection system detects infrared signals, due to the fact that the transmittance of the substrate material is low (less than 70%), particularly in a long-wave infrared band (8-12 microns), detected signals are weak, imaging effect is poor, and accuracy of signal collection and follow-up execution is directly affected. In order to improve the transmittance of the infrared band, an anti-reflection film layer needs to be plated on the surface to improve the transmittance. In addition, as a window material of the detector, a certain hardness is required to protect the softer substrate material. The commonly used infrared window base material at present is ZnS, and the main film systems for the anti-reflection protection of the ZnS comprise a DLC film and carbonAnd oxides, phosphides, nitrides, fluorides, and the like. Among them DLC, germanium carbide (Ge)xC1-x) And the transmittances of Boron Phosphide (BP) and the like can reach 90% after being designed, and the hardness is higher, but the film inevitably has serious performance degradation under the service condition, so that the optical performance of the film is reduced, and the transmittance is reduced to be below 60%. The main reason is that the light absorption of the film is increased during the preparation process due to the H bond contained in the precursor. Meanwhile, the adhesion of the DLC film and zinc sulfide is poor, and a transition layer needs to be deposited, so that the complexity of the process is increased; and GexC1-xAlthough the adhesive has the characteristics of low absorption and low stress, the adhesive has large mismatch degree with the atomic radius of a zinc sulfide substrate, cannot form effective combination with the substrate, and has obvious scratches after being rubbed for 50 times by using the rubber wrapped with absorbent cotton under the pressure of 4.9N. Precursor materials of phosphide are often extremely toxic, and the application of the phosphide is limited. Therefore, the oxide system has the advantages of no toxicity, high stability and the like, the commonly used long-wave infrared material at present is yttrium oxide, the transmittance of the yttrium oxide can reach more than 90 percent, but the yttrium oxide has lower hardness, and the nano indentation hardness is about 4GPa and is equivalent to that of a zinc sulfide substrate.
Disclosure of Invention
The invention provides a preparation method of a long-wave infrared anti-reflection protective film, aiming at solving the problems that the optical performance of the film is reduced due to the serious performance degradation phenomenon of the anti-reflection protective film of the window material of the existing infrared detection system or the adhesion between the anti-reflection protective film and a substrate is poor, a transition layer needs to be deposited, the process complexity is increased, or the hardness of the anti-reflection protective film is lower.
The preparation method of the long-wave infrared anti-reflection protective film is completed according to the following steps:
firstly, cleaning a target and a window:
under the condition that the ultrasonic power is 100W-300W, sequentially placing the metal Gd target material into acetone, alcohol and deionized water to be respectively cleaned for 10 min-20 min, and then blowing off dust attached to the surface by using nitrogen to obtain a clean target material; under the condition that the ultrasonic power is 100W-300W, sequentially placing the ZnS infrared window material in acetone, alcohol and deionized water to be respectively cleaned for 10 min-20 min, and then blowing off dust attached to the surface by using nitrogen to obtain a substrate material;
secondly, preparation work before film coating:
firstly, a clean target material is arranged on a magnetron sputtering target position, a substrate material is arranged at the central position of a heating table in a high vacuum magnetron sputtering coating system, and then a vacuum system is started to vacuumize a vacuum chamber to ensure that the vacuum degree is 6.5 multiplied by 10-5Pa～5.0×10-4Pa, starting a heating device, and heating the substrate material to 200-700 ℃;
thirdly, preparing Gd by adopting a reactive sputtering mode2O3Film formation:
adjusting the flow rate of argon gas to 10 sccm-100 sccm, the flow rate of oxygen gas to 2 sccm-10 sccm, and the bias voltage to-50V-200V, adjusting the gas pressure in the vacuum chamber to 0.2 Pa-2.0 Pa, and then sputtering and coating by using a radio frequency power supply or a high-energy pulse power supply under the conditions that the flow rate of argon gas is 10 sccm-100 sccm, the flow rate of oxygen gas is 2 sccm-10 sccm, the bias voltage is-50V-200V, the gas pressure is 0.2 Pa-2.0 Pa, and the temperature of a substrate material is 200-700 ℃;
when a radio frequency power supply is adopted, the sputtering power is 50W-200W, the pre-sputtering is carried out for 5 min-10 min, and then the surface of the substrate material is coated for 2 h-6 h; when a high-energy pulse power supply is adopted, the sputtering power is 50W-200W, the pulse frequency is 10 Hz-2000 Hz, the pulse width is 20 mu-100 mu, the pre-sputtering is firstly carried out for 5 min-10 min, and then the surface of the substrate material is coated with a film for 2 h-6 h;
fourthly, ending shutdown:
all power supplies are turned off, the temperature in the vacuum bin is reduced to 25-70 ℃, and the single surface is plated with Gd2O3A substrate material of the thin film; the Gd2O3The thickness of the film is 500 nm-1500 nm;
fifthly, double-sided film coating:
one side is plated with Gd2O3The uncoated side of the substrate material of the film is repeatedly carried out according to the steps from two to four to obtain the substrate material with two sides coated with Gd2O3Substrate material for thin films, i.e. for obtaining a long-wave infrared radiationA method for preparing a transparent protective film.
The invention has the beneficial effects that:
1. gd with anti-reflection and protection functions is plated on the surface of the ZnS infrared window2O3The film improves the infrared transmittance, improves the detection accuracy, plays a role in protecting an infrared window, improves the hardness and further improves the sand erosion and rain erosion resistance of the film.
2. Compared with the prior art, Gd prepared on the ZnS infrared window by using the method2O3The film enables the integral infrared transmittance to reach 90%, the hardness to reach 8GPa, and the performance of the film is improved by more than one time compared with that of a substrate and the existing oxide anti-reflection material.
Drawings
FIG. 1 is an infrared transmittance spectrum; 1 is the substrate material described in the first step of the example, 2 is the single-side Gd-plated substrate material prepared in the fourth step of the example2O3Substrate material of film, 3 is a double-sided Gd-plated substrate prepared in the fifth step of the example2O3A substrate material of the thin film;
FIG. 2 is a hardness test map; 1 is the substrate material described in the first step of the example, 2 is the single-side Gd-plated substrate material prepared in the fourth step of the example2O3A substrate material of the film.
Detailed Description
The first embodiment is as follows: the preparation method of the long-wave infrared anti-reflection protective film in the embodiment is completed according to the following steps:
firstly, cleaning a target and a window:
under the condition that the ultrasonic power is 100W-300W, sequentially placing the metal Gd target material into acetone, alcohol and deionized water to be respectively cleaned for 10 min-20 min, and then blowing off dust attached to the surface by using nitrogen to obtain a clean target material; under the condition that the ultrasonic power is 100W-300W, sequentially placing the ZnS infrared window material in acetone, alcohol and deionized water to be respectively cleaned for 10 min-20 min, and then blowing off dust attached to the surface by using nitrogen to obtain a substrate material;
secondly, preparation work before film coating:
firstly, a clean target material is arranged on a magnetron sputtering target position, a substrate material is arranged at the central position of a heating table in a high vacuum magnetron sputtering coating system, and then a vacuum system is started to vacuumize a vacuum chamber to ensure that the vacuum degree is 6.5 multiplied by 10-5Pa～5.0×10-4Pa, starting a heating device, and heating the substrate material to 200-700 ℃;
thirdly, preparing Gd by adopting a reactive sputtering mode2O3Film formation:
adjusting the flow rate of argon gas to 10 sccm-100 sccm, the flow rate of oxygen gas to 2 sccm-10 sccm, and the bias voltage to-50V-200V, adjusting the gas pressure in the vacuum chamber to 0.2 Pa-2.0 Pa, and then sputtering and coating by using a radio frequency power supply or a high-energy pulse power supply under the conditions that the flow rate of argon gas is 10 sccm-100 sccm, the flow rate of oxygen gas is 2 sccm-10 sccm, the bias voltage is-50V-200V, the gas pressure is 0.2 Pa-2.0 Pa, and the temperature of a substrate material is 200-700 ℃;
when a radio frequency power supply is adopted, the sputtering power is 50W-200W, the pre-sputtering is carried out for 5 min-10 min, and then the surface of the substrate material is coated for 2 h-6 h; when a high-energy pulse power supply is adopted, the sputtering power is 50W-200W, the pulse frequency is 10 Hz-2000 Hz, the pulse width is 20 mu-100 mu, the pre-sputtering is firstly carried out for 5 min-10 min, and then the surface of the substrate material is coated with a film for 2 h-6 h;
fourthly, ending shutdown:
all power supplies are turned off, the temperature in the vacuum bin is reduced to 25-70 ℃, and the single surface is plated with Gd2O3A substrate material of the thin film; the Gd2O3The thickness of the film is 500 nm-1500 nm;
fifthly, double-sided film coating:
one side is plated with Gd2O3The uncoated side of the substrate material of the film is repeatedly carried out according to the steps from two to four to obtain the substrate material with two sides coated with Gd2O3The substrate material of the film is used for preparing the long-wave infrared anti-reflection protective film.
The beneficial effects of the embodiment are as follows: 1. the embodiment has the advantages of anti-reflection and anti-reflection by plating on the surface of the ZnS infrared windowProtective Gd2O3The film improves the infrared transmittance, improves the detection accuracy, plays a role in protecting an infrared window, improves the hardness and further improves the sand erosion and rain erosion resistance of the film.
2. Compared with the prior art, Gd prepared on the ZnS infrared window by using the method2O3The film enables the integral infrared transmittance to reach 90%, the hardness to reach 8GPa, and the performance of the film is improved by more than one time compared with that of a substrate and the existing oxide anti-reflection material.
The second embodiment is as follows: the first difference between the present embodiment and the specific embodiment is: in the first step, under the condition that the ultrasonic power is 200W-300W, the metal Gd target material is sequentially placed in acetone, alcohol and deionized water to be respectively cleaned for 15 min-20 min, and then nitrogen is used for blowing off dust attached to the surface to obtain the clean target material. The rest is the same as the first embodiment.
The third concrete implementation mode: this embodiment is different from the first or second embodiment in that: in the first step, under the condition that the ultrasonic power is 200W-300W, the ZnS infrared window material is sequentially placed in acetone, alcohol and deionized water to be respectively cleaned for 15 min-20 min, and then dust attached to the surface is blown off by nitrogen to obtain the substrate material. The other is the same as in the first or second embodiment.
The fourth concrete implementation mode: the difference between this embodiment mode and one of the first to third embodiment modes is: in the second step, a vacuum system is started to vacuumize the vacuum chamber, so that the vacuum degree is 6.5 multiplied by 10-5Pa～5.0×10-4Pa, starting the heating device, and heating the substrate material to 400-700 ℃. The others are the same as the first to third embodiments.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is: adjusting the flow rate of argon gas to be 50 sccm-100 sccm, adjusting the flow rate of oxygen gas to be 5 sccm-10 sccm, and adjusting the bias voltage to-50V-100V, adjusting the gas pressure in the vacuum chamber to be 1.0 Pa-2.0 Pa, and then sputtering and coating by using a radio frequency power supply or a high-energy pulse power supply under the conditions that the flow rate of argon gas is 50 sccm-100 sccm, the flow rate of oxygen gas is 5 sccm-10 sccm, the bias voltage is-50V-100V, the gas pressure is 1.0 Pa-2.0 Pa, and the temperature of a substrate material is 400-700 ℃. The rest is the same as the first to fourth embodiments.
The sixth specific implementation mode: the difference between this embodiment and one of the first to fifth embodiments is: and in the third step, when a radio frequency power supply is adopted, the sputtering power is 100W-200W, the pre-sputtering is carried out for 7 min-10 min, and then the surface of the substrate material is coated for 4 h-6 h. The rest is the same as the first to fifth embodiments.
The seventh embodiment: the difference between this embodiment and one of the first to sixth embodiments is: when a high-energy pulse power supply is adopted in the third step, the sputtering power is 100W-200W, the pulse frequency is 1000 Hz-2000 Hz, the pulse width is 50 mu-100 mu, the pre-sputtering is firstly carried out for 7 min-10 min, and then the surface of the substrate material is coated with the film for 4 h-6 h. The others are the same as the first to sixth embodiments.
The specific implementation mode is eight: the present embodiment differs from one of the first to seventh embodiments in that: in the fourth step, all power supplies are turned off, the temperature in the vacuum chamber is reduced to 50-70 ℃, and the single surface is plated with Gd2O3A substrate material of the film. The rest is the same as the first to seventh embodiments.
The specific implementation method nine: the present embodiment differs from the first to eighth embodiments in that: gd described in step four2O3The thickness of the film is 800 nm-1500 nm. The other points are the same as those in the first to eighth embodiments.
The detailed implementation mode is ten: the present embodiment differs from one of the first to ninth embodiments in that: gd described in step four2O3The thickness of the film is 500 nm-800 nm. The other points are the same as those in the first to ninth embodiments.
The following examples were used to demonstrate the beneficial effects of the present invention:
the first embodiment is as follows:
the preparation method of the long-wave infrared anti-reflection protective film in the embodiment is completed according to the following steps:
firstly, cleaning a target and a window:
sequentially placing the metal Gd target material into acetone, alcohol and deionized water to be respectively cleaned for 15min under the condition that the ultrasonic power is 150W, and then blowing off dust attached to the surface by using nitrogen to obtain a clean target material; under the condition that the ultrasonic power is 150W, sequentially placing the ZnS infrared window material in acetone, alcohol and deionized water, respectively cleaning for 15min, and then blowing off dust attached to the surface by using nitrogen to obtain a substrate material;
secondly, preparation work before film coating:
firstly, a clean target material is arranged on a magnetron sputtering target position, a substrate material is arranged at the central position of a heating table in a high vacuum magnetron sputtering coating system, and then a vacuum system is started to vacuumize a vacuum chamber to ensure that the vacuum degree is 8.0 multiplied by 10-5Pa, starting a heating device, and heating the substrate material to 400 ℃;
thirdly, preparing Gd by adopting a reactive sputtering mode2O3Film formation:
adjusting the flow of argon gas to 50sccm, the flow of oxygen gas to 3sccm and the bias voltage to-100V, adjusting the gas pressure in the vacuum chamber to 0.3Pa, and then sputtering and coating by using a high-energy pulse power supply under the conditions that the flow of argon gas is 50sccm, the flow of oxygen gas is 3sccm, the bias voltage is-100V, the gas pressure is 0.3Pa and the temperature of a substrate material is 400 ℃;
the power supply adopts a high-energy pulse power supply, the sputtering power is 120W, the pulse frequency is 800Hz, the pulse width is 30 mu, the pre-sputtering is carried out for 10min, and then the surface of the substrate material is coated with a film for 4.5 h;
fourthly, ending shutdown:
all power supplies are turned off and the temperature in the vacuum chamber is reduced to 30 ℃ to obtain the product with single surface plated with Gd2O3A substrate material of the thin film; the Gd2O3The thickness of the film is 1300 nm;
fifthly, double-sided film coating:
one side is plated with Gd2O3The uncoated side of the substrate material of the film is repeatedly carried out according to the steps from two to four to obtain the substrate material with two sides coated with Gd2O3The substrate material of the film is used for preparing the long-wave infrared anti-reflection protective film.
FIG. 1 is an infrared transmittance spectrum; 1 is the substrate material described in the first step of the example, 2 is a single-side Gd-plated substrate material prepared in the fourth step of the example2O3Substrate material of film, 3 is a double-sided Gd-plated substrate prepared in the fifth step of the example2O3A substrate material of the thin film; as can be seen, Gd was plated on one side2O3The infrared transmittance of the film reaches 82% at most, and the transmittance of the film after double-sided coating is further improved and reaches 90%.
FIG. 2 is a hardness test map; 1 is the substrate material described in the first step of the example, 2 is a single-side Gd-plated substrate material prepared in the fourth step of the example2O3A substrate material of the film. As can be seen from the figure, the hardness is doubled compared with that of the substrate, and the hardness reaches 8GPa, so that the protective effect can be achieved.

Claims (5)

1. The preparation method of the long-wave infrared anti-reflection protective film is characterized by comprising the following steps of:
firstly, cleaning a target and a window:
under the condition that the ultrasonic power is 100W-300W, sequentially placing the metal Gd target material into acetone, alcohol and deionized water to be respectively cleaned for 10 min-20 min, and then blowing off dust attached to the surface by using nitrogen to obtain a clean target material; under the condition that the ultrasonic power is 100W-300W, sequentially placing the ZnS infrared window material in acetone, alcohol and deionized water to be respectively cleaned for 10 min-20 min, and then blowing off dust attached to the surface by using nitrogen to obtain a substrate material;
secondly, preparation work before film coating:
firstly, a clean target material is arranged on a magnetron sputtering target position, a substrate material is arranged at the central position of a heating table in a high vacuum magnetron sputtering coating system, and then a vacuum system is started to vacuumize a vacuum chamber to ensure that the vacuum degree is 6.5 multiplied by 10-5Pa～5.0×10-4Pa, starting a heating device, and heating the substrate material to 200-700 ℃;
thirdly, preparing Gd by adopting a reactive sputtering mode2O3Film formation:
adjusting the flow of argon gas to 50sccm, the flow of oxygen gas to 2 sccm-3 sccm and the bias voltage to-50V-200V, adjusting the gas pressure in the vacuum chamber to 0.2 Pa-0.3 Pa, and then sputtering and coating by using a high-energy pulse power supply under the conditions that the flow of argon gas is 10 sccm-50 sccm, the flow of oxygen gas is 2 sccm-3 sccm, the bias voltage is-50V-200V, the gas pressure is 0.2 Pa-0.3 Pa and the temperature of a substrate material is 200 ℃ to 700 ℃;
when a high-energy pulse power supply is adopted, the sputtering power is 50W-120W, the pulse frequency is 800 Hz-2000 Hz, the pulse width is 20 mus-100 mus, the pre-sputtering is firstly carried out for 5 min-10 min, and then the surface of the substrate material is coated with a film for 4.5 h-6 h;
fourthly, ending shutdown:
all power supplies are turned off, the temperature in the vacuum bin is reduced to 25-70 ℃, and the single surface is plated with Gd2O3A substrate material of the thin film; the Gd2O3The thickness of the film is 1300 nm-1500 nm;
fifthly, double-sided film coating:
one side is plated with Gd2O3The uncoated side of the substrate material of the film is repeatedly carried out according to the steps from two to four to obtain the substrate material with two sides coated with Gd2O3The substrate material of the film is used for preparing the long-wave infrared anti-reflection protective film.
2. The method for preparing a long-wave infrared anti-reflection protective film according to claim 1, wherein in the first step, under the condition that the ultrasonic power is 200W-300W, the metal Gd target material is sequentially placed in acetone, alcohol and deionized water to be respectively cleaned for 15 min-20 min, and then dust attached to the surface is blown off by nitrogen gas to obtain a clean target material.
3. The method for preparing a long-wave infrared antireflection protective film according to claim 1, characterized in that in the first step, under the condition that the ultrasonic power is 200W to 300W, the ZnS infrared window material is sequentially placed in acetone, alcohol and deionized water to be respectively cleaned for 15min to 20min, and then dust attached to the surface is blown off by nitrogen gas to obtain the substrate material.
4. The method for preparing a long-wave infrared antireflection protective film according to claim 1, characterized in that in the second step, the vacuum system is started to vacuumize the vacuum chamber to a vacuum degree of 6.5 x 10-5Pa～5.0×10-4Pa, starting the heating device, and heating the substrate material to 400-700 ℃.
5. The method for preparing a long-wave infrared antireflection protective film according to claim 1, characterized in that in the fourth step, all power supplies are turned off and the temperature in the vacuum chamber is reduced to 50-70 ℃ to obtain a film with a single surface coated with Gd2O3A substrate material of the film.
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CN108962730A (en) * 2018-07-11 2018-12-07 无锡奥夫特光学技术有限公司 A kind of preparation method of infrared optical window
CN109659396B (en) * 2018-12-21 2020-07-07 哈尔滨工业大学 Preparation method of intermediate infrared transparent P-type semiconductor film
CN112698430B (en) * 2020-12-11 2022-05-13 中材人工晶体研究院有限公司 ZnS substrate long-wave infrared anti-reflection protective film and preparation method thereof

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