CN111331518A - Surface treatment method for high-purity copper rotary target material - Google Patents
Surface treatment method for high-purity copper rotary target material Download PDFInfo
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- CN111331518A CN111331518A CN202010323698.6A CN202010323698A CN111331518A CN 111331518 A CN111331518 A CN 111331518A CN 202010323698 A CN202010323698 A CN 202010323698A CN 111331518 A CN111331518 A CN 111331518A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
- B24C1/06—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for producing matt surfaces, e.g. on plastic materials, on glass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C11/00—Selection of abrasive materials or additives for abrasive blasts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C9/00—Appurtenances of abrasive blasting machines or devices, e.g. working chambers, arrangements for handling used abrasive material
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Abstract
The invention relates to a surface treatment method for a high-purity copper rotary target, which comprises the following steps: carrying out shielding treatment on the high-purity copper rotary target material, and carrying out sand blasting after the shielding treatment is finished; wherein the roughness of the target surface after the sand blasting is Rz35-65 μm; and the shielding treatment is to shield the sputtering surfaces and the side edges of the two ends of the high-purity copper rotary target material by using an adhesive tape. The surfaces of the two ends of the rotary target processed by the method are sandblasted, so that the color is consistent, the surface roughness is uniform and improved, impurities such as stains and the like are avoided, the adsorption capacity of a reverse sputtering object in the sputtering process of the target is improved, the coating quality of the target is improved, and the yield is improved.
Description
Technical Field
The invention relates to the field of surface treatment, in particular to a method for treating the surface of a high-purity copper rotary target material.
Background
At present, high-purity copper (more than or equal to 3N) rotary target materials are mostly applied to the field of film coating of liquid crystal displays, solar panels and the like, compared with the traditional planar target materials, the utilization rate of the rotary target can reach 80%, and the film coating quality is obviously superior to that of the planar target materials; at present, the domestic production of the high-purity copper rotary target material is in a primary stage, but the development of the G8.5 generation copper rotary target material with more complex structure and higher technical difficulty is basically absent.
The rotary target is a magnetic control target. The target material is made into a cylinder shape, and a static magnet is arranged in the cylinder shape and rotates at a slow speed. Mainly comprises zinc-tin alloy, zinc-aluminum alloy, tin-cadmium alloy, copper-indium-gallium alloy, copper-gallium alloy, tin, molybdenum, titanium and other rotary targets.
The sputtering principle of the magnetron sputtering target material is as follows: an orthogonal magnetic field and an electric field are applied between a target pole (cathode) and an anode to be sputtered, required inert gas (usually Ar gas) is filled in a high-vacuum chamber, a permanent magnet forms a magnetic field of 250-350 gauss on the surface of a target material, and the orthogonal electromagnetic field is formed by the same high-voltage electric field. Under the action of electric field, Ar gas is ionized into positive ions and electrons, a certain negative high voltage is added on the target, the electrons emitted from the target electrode are subjected to the action of a magnetic field and the ionization probability of working gas is increased, high-density plasma is formed near the cathode, Ar ions accelerate to fly to the target surface under the action of Lorentz force, and bombard the target surface at a high speed, so that atoms sputtered from the target are separated from the target surface by high kinetic energy to fly to a substrate to deposit and form a film according to the momentum conversion principle. Magnetron sputtering is generally divided into two categories: direct current sputtering and radio frequency sputtering, wherein the direct current sputtering device has simple principle, and the speed is fast when metal is sputtered. The application range of the radio frequency sputtering is wider, and the radio frequency sputtering can be used for sputtering conductive materials, non-conductive materials and preparing compound materials such as oxides, nitrides, carbides and the like by reactive sputtering. When the frequency of the radio frequency is increased, microwave plasma sputtering is performed, and nowadays, Electron Cyclotron Resonance (ECR) type microwave plasma sputtering is generally used.
Of all the applications, the semiconductor industry is most demanding on the quality of target sputtered films. Silicon wafers of 12 inches have been manufactured today, but the width of interconnect lines is decreasing. Silicon wafer manufacturers demand targets of large size, high purity, low segregation and fine grain, which requires the manufactured targets to have a better microstructure. The crystalline particle diameter and uniformity of the target material have been considered as key factors affecting the deposition rate of the thin film. In addition, the purity of the film is greatly related to the purity of the target, and the past copper target with 99.995% purity may meet the requirement of a semiconductor manufacturer for a 0.35 μm process, but cannot meet the current requirement for the 0.25 μm process, while the required target purity of the future 0.18 μm process, even 0.13 μm process, will reach 5N, even more than 6N. Compared with aluminum, copper has higher electromigration resistance and lower resistivity, and can satisfy! The need for conductor processing sub-micron wiring below 0.25 μm presents other problems: copper has low adhesion strength with organic dielectric materials and is susceptible to reaction, resulting in open circuits due to corrosion of the copper interconnects of the chip during use. To solve these problems, a barrier layer is required between the copper and the dielectric layer. The barrier layer material generally adopts metals and compounds thereof with high melting point and high resistivity, so the thickness of the barrier layer is required to be less than 50nm, and the adhesion performance with copper and dielectric materials is good. The barrier layer materials of copper interconnects and aluminum interconnects are different, and new target materials need to be developed. Targets for barrier layers for copper interconnects include Ta, W, TaSi, WSi, etc. however, Ta, W are both refractory metals.
The prior art mainly focuses on the sputtering surface treatment of the rotating target, for example, CN101700616A discloses a surface treatment method of a sputtering target, which comprises: providing a sputtering target material, wherein the sputtering target material is aluminum or aluminum alloy; performing lathe machining on the surface of the sputtering target material, and cooling by adopting alcohol in the process of turning chips; and polishing the sputtering target material after turning by using a polishing piece. Compared with the prior art, the invention can cool the heat generated in the machining process of the lathe in time, so that less or no accumulated chips are generated in the machining process of the lathe, the damage of the accumulated chips to the surface of the sputtering target material is avoided, the flatness and the smoothness of the surface of the sputtering target material are improved, and the sputtering target material product meeting the process requirements is manufactured.
CN106755891A discloses a surface treatment method of a high-purity metal sputtering target. After the target material is subjected to surface precision machining, surface grinding and surface cleaning, the surface of the target material is subjected to rapid heat treatment by adopting a continuous wave laser heat treatment method, a scanning electron beam method or an incoherent broadband frequency light source method, and a hardened layer on the surface of the target material is recrystallized by the skin effect of the rapid heat treatment, so that stress and dislocation in the hardened layer are eliminated, and a recrystallized structure basically consistent with a matrix is obtained. The method has the advantages of simple process, high speed, high universality, suitability for targets with different sizes, no pollution of materials in the preparation process, low material loss and environmental protection. However, no significant attention has been paid to the non-sputtering surface treatment at both ends of the target which affects the sputtering quality.
The application aims at optimizing the surface treatment method of the non-sputtering areas at the two ends of the rotary target and improving the sputtering quality of the target.
Disclosure of Invention
In view of the problems in the prior art, the invention aims to provide a method for treating the surface of a high-purity copper rotary target material so as to improve the sputtering quality of the target material, the treated surfaces of two ends of the rotary target material have consistent color and luster after sand blasting, the surface roughness is uniform and improved, impurities such as stains and the like are avoided, the adsorption capacity of a reverse sputtering object in the sputtering process of the target material is improved, and the coating quality and the sputtering stability of the target material are improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a surface treatment method for a high-purity copper rotary target, which comprises the following steps: carrying out shielding treatment on the high-purity copper rotary target material, and carrying out sand blasting after the shielding treatment is finished; wherein the roughness of the target surface after the sand blasting is Rz35-65 μm; and the shielding treatment is to shield the sputtering surfaces and the side edges of the two ends of the high-purity copper rotary target material by using an adhesive tape.
The surfaces of the two ends of the rotary target processed by the method are sandblasted, so that the color is consistent, the surface roughness is uniform and improved, impurities such as stains and the like are avoided, the adsorption capacity of the target on the reverse sputtered substances in the sputtering process is improved, the coating quality of the target is improved, the yield is improved, the reverse sputtered substances generated in the sputtering process can be adsorbed by sandblasting, and cannot be deposited on a coated glass panel to cause pollution.
In the present invention, the roughness of the target surface after the blasting is Rz35-65 μm, and may be, for example, 35 μm, 36 μm, 37 μm, 38 μm, 39 μm, 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, 45 μm, 46 μm, 47 μm, 48 μm, 49 μm, 50 μm, 51 μm, 52 μm, 53 μm, 54 μm, 55 μm, 56 μm, 57 μm, 58 μm, 59 μm, 60 μm, 61 μm, 62 μm, 63 μm, 64 μm or 65 μm, but is not limited to the above-mentioned values, and other values not specifically mentioned in the above-mentioned range are also applicable.
In a preferred embodiment of the present invention, the tape used in the masking process includes an insulating heat-resistant tape.
In a preferred embodiment of the present invention, the working pressure in the blasting is 3 to 5MPa, and may be, for example, 3MPa, 3.1MPa, 3.2MPa, 3.3MPa, 3.4MPa, 3.5MPa, 3.6MPa, 3.7MPa, 3.8MPa, 3.9MPa, 4MPa, 4.1MPa, 4.2MPa, 4.3MPa, 4.4MPa, 4.5MPa, 4.6MPa, 4.7MPa, 4.8MPa, 4.9MPa or 5MPa, but is not limited to the values listed above, and other values not listed in this range are also applicable.
As a preferable technical scheme of the invention, the operation pressure in the sand blasting is 3.5-4 MPa.
As a preferred embodiment of the present invention, the sand used in the blasting includes white corundum.
In a preferred embodiment of the present invention, the grit used in the blasting has a particle size of 0.3 to 0.5mm, for example, 0.3mm, 0.32mm, 0.34mm, 0.36mm, 0.38mm, 0.4mm, 0.42mm, 0.44mm, 0.46mm, 0.48mm, or 0.5mm, but not limited to the above-mentioned values, and other values not listed in this range are also applicable.
As a preferable technical scheme of the invention, the granularity of sand grains used in the sand blasting is 0.35-0.4 mm.
In the blasting according to a preferred embodiment of the present invention, the distance between the blasting tip and the target surface is 15 to 25mm, and may be, for example, 15mm, 16mm, 17mm, 18mm, 19mm, 20mm, 21mm, 22mm, 23mm, 24mm, or 25mm, but is not limited to the above-mentioned values, and other values not listed in the above range are also applicable.
In a preferred embodiment of the present invention, the blasting is performed at least 2 times, and may be performed, for example, 2 times, 3 times, 4 times, 5 times, 6 times, 7 times, 8 times, 9 times, 10 times, 11 times, 12 times, 13 times, 14 times, or 15 times, but is not limited to the above-mentioned values, and other values not listed in the range are also applicable.
As a preferred technical solution of the present invention, the method comprises: carrying out shielding treatment on the high-purity copper rotary target material, and carrying out sand blasting after the shielding treatment is finished;
the shielding treatment is to shield the sputtering surfaces and the side edges of the two ends of the target material by using an adhesive tape; the adhesive tape in the masking treatment comprises an insulating heat-resistant adhesive tape; the working pressure in the sand blasting is 3-5 MPa; the sand used in the sand blasting is white corundum; the granularity of sand used in the sand blasting is 0.3-0.5 mm; the distance between the sand blasting gun head and the surface of the target material in the sand blasting is 15-25 mm; the blasting is carried out at least 2 times; the roughness of the target surface after the sand blasting is Rz35-65 μm.
Compared with the prior art, the invention has the following beneficial effects:
the surfaces of the two ends of the rotary target treated by the method are sandblasted, so that the color is consistent, the surface roughness is uniform and improved, impurities such as stains and the like are avoided, the adsorption capacity of a reverse sputtering object in the sputtering process of the target is improved, and the coating quality and the yield of the target are improved.
Drawings
Fig. 1 is a schematic diagram of blasting in example 1 of the present invention.
In the figure, 1-the blasting head, 2-the target, 3-the blasting surface 1, 4-the blasting surface 2.
The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:
example 1
The embodiment provides a method for surface treatment of a high-purity copper rotary target, wherein a sand blasting position in the method is shown in fig. 1, and the method comprises the following steps: carrying out shielding treatment on the high-purity copper rotary target material, and carrying out sand blasting after the shielding treatment is finished;
the shielding treatment is to shield the sputtering surfaces and the side edges of the two ends of the target material by using an adhesive tape; the adhesive tape in the masking treatment comprises an insulating heat-resistant adhesive tape; the operation pressure in the sand blasting is 3 MPa; the sand used in the sand blasting is white corundum; the granularity of sand used in the sand blasting is 0.35 mm; the distance between the sand blasting gun head and the surface of the target material in the sand blasting is 15 mm; the blasting was performed 2 times.
And after the sand blasting is finished, the roughness of the sand blasting surface is tested, the roughness is tested to be Rz40-50 mu m, the adsorption capacity of the reverse sputtering material is obviously improved, and the coating quality of the target material is obviously improved.
Example 2
The embodiment provides a method for treating the surface of a high-purity copper rotary target, which comprises the following steps: carrying out shielding treatment on the high-purity copper rotary target material, and carrying out sand blasting after the shielding treatment is finished;
the shielding treatment is to shield the sputtering surfaces and the side edges of the two ends of the target material by using an adhesive tape; the adhesive tape in the masking treatment comprises an insulating heat-resistant adhesive tape; the operation pressure in the sand blasting is 4 MPa; the sand used in the sand blasting is white corundum; the granularity of sand used in the sand blasting is 0.4 mm; the distance between the sand blasting gun head and the surface of the target material in the sand blasting is 20 mm; the blasting was performed 3 times.
And after the sand blasting is finished, the roughness of the sand blasting surface is tested, the roughness Rz is measured to be 45-55 mu m, the adsorption capacity of the reverse sputtering material is obviously improved, and the coating quality of the target material is obviously improved.
Example 3
The embodiment provides a method for treating the surface of a high-purity copper rotary target, which comprises the following steps: carrying out shielding treatment on the high-purity copper rotary target material, and carrying out sand blasting after the shielding treatment is finished;
the shielding treatment is to shield the sputtering surfaces and the side edges of the two ends of the target material by using an adhesive tape; the adhesive tape in the masking treatment comprises an insulating heat-resistant adhesive tape; the operation pressure in the sand blasting is 5 MPa; the sand used in the sand blasting is white corundum; the granularity of sand used in the sand blasting is 0.45 mm; the distance between the sand blasting gun head and the surface of the target material in the sand blasting is 25 mm; the blasting was performed 2 times.
And after the sand blasting is finished, the roughness of the sand blasting surface is tested to be 45-55 mu m, the adsorption capacity of the reverse sputtering material is obviously improved, and the coating quality of the target material is obviously improved.
Comparative example 1
The difference from the embodiment 1 is that the operation pressure in the sand blasting is 1MPa, the roughness of the sand blasting surface is tested after the sand blasting is finished, the measured roughness is less than or equal to 20 mu m, the adsorption capacity of the reverse sputtering material is obviously reduced, and the coating quality of the target material is not improved.
Comparative example 2
The difference from the example 1 is that the operation pressure in the sand blasting is 10MPa, the roughness of the sand blasting surface is tested after the sand blasting is finished, the roughness is more than 100 mu m, the adsorption capacity of the reverse sputtering material is obviously reduced, and the coating quality of the target material is not improved.
Comparative example 3
The difference from the example 1 is that the distance between the sandblasting gun head and the target surface is 5mm during sandblasting, and the roughness of the sandblasted surface is tested after the sandblasting is finished, so that the roughness is more than 65 mu m, the adsorption capacity of the reverse sputtering material is obviously reduced, and the coating quality of the target is not improved.
Comparative example 4
The difference from the example 1 is that the distance between the sandblasting gun head and the target surface in sandblasting is 40mm, and the roughness of the sandblasted surface is tested after sandblasting is finished, and the roughness is less than 35 mu m, the adsorption capacity of the reverse sputtering material is obviously reduced, and the coating quality of the target is not improved.
According to the results of the above examples and comparative examples, the surfaces of the two ends of the rotary target treated by the method are sandblasted to have consistent color and luster, uniform and improved surface roughness, no impurities such as stains and the like, improved adsorption capacity to reverse sputtered materials in the sputtering process of the target, and improved coating quality and sputtering stability of the target.
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (10)
1. A method for treating the surface of a high-purity copper rotary target material is characterized by comprising the following steps: carrying out shielding treatment on the high-purity copper rotary target material, and carrying out sand blasting after the shielding treatment is finished; wherein the roughness of the target surface after the sand blasting is Rz35-65 μm; and the shielding treatment is to shield the sputtering surfaces and the side edges of the two ends of the high-purity copper rotary target material by using an adhesive tape.
2. The method of claim 1, wherein the tape in the masking process comprises insulating heat resistant tape.
3. The method according to claim 1 or 2, wherein the working pressure in the blasting is 3-5 MPa.
4. The method of claim 3, wherein the operating pressure in the blasting is 3.5 to 4 MPa.
5. A method according to any one of claims 1 to 4, wherein the grit used in the blasting comprises white corundum.
6. A method according to any one of claims 1 to 5, wherein the grit used in the blasting is 0.3 to 0.5mm in size.
7. A method according to claim 6, wherein the grit used in the blasting is 0.35 to 0.4mm in size.
8. The method according to any one of claims 1 to 7, wherein the distance of the blasting tip from the target surface in the blasting is from 15 to 25 mm.
9. The method of any one of claims 1 to 8, wherein the blasting is performed at least 2 times.
10. The method of any one of claims 1-9, wherein the method comprises: carrying out shielding treatment on the high-purity copper rotary target material, and carrying out sand blasting after the shielding treatment is finished;
the shielding treatment is to shield the sputtering surfaces and the side edges of the two ends of the target material by using an adhesive tape; the adhesive tape in the masking treatment comprises an insulating heat-resistant adhesive tape; the working pressure in the sand blasting is 3-5 MPa; the sand used in the sand blasting is white corundum; the granularity of sand used in the sand blasting is 0.3-0.5 mm; the distance between the sand blasting gun head and the surface of the target material in the sand blasting is 15-25 mm; the blasting is carried out at least 2 times; the roughness of the target surface after the sand blasting is Rz35-65 μm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010323698.6A CN111331518A (en) | 2020-04-22 | 2020-04-22 | Surface treatment method for high-purity copper rotary target material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010323698.6A CN111331518A (en) | 2020-04-22 | 2020-04-22 | Surface treatment method for high-purity copper rotary target material |
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| CN111331518A true CN111331518A (en) | 2020-06-26 |
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| CN202010323698.6A Pending CN111331518A (en) | 2020-04-22 | 2020-04-22 | Surface treatment method for high-purity copper rotary target material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113073297A (en) * | 2021-03-23 | 2021-07-06 | 熔创金属表面科技(常州)有限公司 | Device for remanufacturing rotary silicon-aluminum target material and preparation method thereof |
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| CN101597727A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of copper target material surface |
| CN103481199A (en) * | 2012-06-13 | 2014-01-01 | 宁波江丰电子材料有限公司 | Target material processing method |
| CN104511841A (en) * | 2013-09-27 | 2015-04-15 | 宁波江丰电子材料股份有限公司 | Sandblast method for target material |
| EP3178962A1 (en) * | 2015-12-08 | 2017-06-14 | STK Corporation | Roll-to-roll sputtering process with hybrid target and product thereof |
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2020
- 2020-04-22 CN CN202010323698.6A patent/CN111331518A/en active Pending
Patent Citations (4)
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| CN101597727A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of copper target material surface |
| CN103481199A (en) * | 2012-06-13 | 2014-01-01 | 宁波江丰电子材料有限公司 | Target material processing method |
| CN104511841A (en) * | 2013-09-27 | 2015-04-15 | 宁波江丰电子材料股份有限公司 | Sandblast method for target material |
| EP3178962A1 (en) * | 2015-12-08 | 2017-06-14 | STK Corporation | Roll-to-roll sputtering process with hybrid target and product thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113073297A (en) * | 2021-03-23 | 2021-07-06 | 熔创金属表面科技(常州)有限公司 | Device for remanufacturing rotary silicon-aluminum target material and preparation method thereof |
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