CN110735118A - Roughness processing method for target sputtering surface - Google Patents

Roughness processing method for target sputtering surface Download PDF

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Publication number
CN110735118A
CN110735118A CN201810806850.9A CN201810806850A CN110735118A CN 110735118 A CN110735118 A CN 110735118A CN 201810806850 A CN201810806850 A CN 201810806850A CN 110735118 A CN110735118 A CN 110735118A
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China
Prior art keywords
target
tape
processing area
roughness
sputtering
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CN201810806850.9A
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Chinese (zh)
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不公告发明人
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Youkuang Materials Co Ltd
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Youkuang Materials Co Ltd
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Priority to CN201810806850.9A priority Critical patent/CN110735118A/en
Publication of CN110735118A publication Critical patent/CN110735118A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a processing method of target sputtering surface roughness, which is used for forming a surface with required roughness on a target.A target is taken and a sputtering processing area is confirmed, a non-processing area is shielded, a processing area is subjected to sand blasting and coating treatment, and then the target is cleaned in a wiping way.A rough surface with the average roughness (Ra) of 18-20 micrometers (mum) and the uniformity of less than 10 percent is processed on the surface of a default position of the target by the method, the overall cleanliness of the target is required to meet the class1000 requirement in the dust free room specification (American standard 209e), and the target is provided with a excellent attachment surface in the subsequent sputtering process.

Description

Roughness processing method for target sputtering surface
Technical Field
The invention relates to the technical field of target surface treatment, in particular to a roughness processing method for target sputtering surfaces.
Background
Sputtering is Physical Vapor Deposition (PVD) methods for forming metal thin films, which can be applied to the manufacture of liquid crystal display panels, plasma display panels, or semiconductor microcircuits, so-called sputtering, in which ions in plasma bombard a sputtering material (target) with a magnetic or electric field to cause atoms on the surface (front) of the sputtering material to be sputtered and to fly toward a target (sputtered object), and then the atoms of the sputtering material flying toward the target are attached to the target surface to form metal layers on the target surface.
In this specification, the center line average roughness (Ra) is defined as that obtained by cutting rough curves measured as L from the machined surface, taking the center line of the depth of the roughness in the length L as the x-axis, and taking the perpendicular line of the center line as the y-axis, then the rough curves can be represented by y ═ f (x) table.
Experiments prove that the roughness of the surface of the target material is beneficial to improving the effect of sputtering material atoms and attaching the atoms to the surface of the target material; referring to FIG. 1, for example, when the surface roughness of the target is 2 to 5 μm (Ra) (i.e. region A), the number of sputtered material atoms (particle count) measured on the target surface during sputtering is about 30% to 40%. When the surface roughness of the target is increased, the number of sputtered material atoms measured on the target surface has a characteristic of rising curve. Wherein, when the target surface roughness is between 10 to 12 μm (Ra) (i.e. B region), the curve characteristic (excessive number of atoms of sputtering material) is better, and when the target surface roughness is between 18 to 20 μm (Ra), the curve characteristic (excessive number of atoms of sputtering material) is better.
Disclosure of Invention
In view of the above-mentioned requirement for the surface roughness of the target in the sputtering process, the objective of the present invention is to provide methods for processing the surface roughness of the sputtering surface of the target, so as to process a surface with a predetermined roughness on the target surface.
According to the above object of the present invention, there is provided a method for processing the roughness of a sputtering surface of kinds of targets, comprising;
(a) target material is taken, processing area to be sputtered on the target material and non-processing area not to be sputtered on the target material are confirmed;
(b) coating the non-processing area with adhesive tape;
(c) carrying out sand blasting treatment on the processing area by using an sand material to form a rough surface with the average roughness (Ra) of 4-6 micrometers (mum) and the uniformity of less than 10% on the surface of the processing area;
(d) spraying molybdenum coating material on the processing area to form a rough surface with average roughness (Ra) of 18-20 μm and uniformity below 10%;
(e) and removing the adhesive tape and matching with an wiping piece to wipe the target until the cleanliness of the target meets the requirement of dust-free class 1000.
The method is adopted to process rough surfaces with the average roughness (Ra) of 18-20 micrometers (mum) and the uniformity of less than 10% on the surfaces of the default positions of the target, and the overall cleanliness of the target is required to meet the class1000 grade requirement in the dust free chamber specification (American standard 209e), so that the target can provide excellent attachment surfaces in the subsequent sputtering process.
Drawings
FIG. 1 is a graphical representation of the resulting population for different roughnesses.
FIG. 2 is a diagram of the roughness processing method of the sputtering surface of the target of the present invention.
Fig. 3 is a schematic representation of an embodiment of the present invention.
FIG. 4 is a schematic diagram of an embodiment of the present invention.
Wherein: 10 target, 12 processing area, 14 non-processing area, 20 adhesive tape, 100-500 steps, and A, B area.
Detailed Description
Reference is now made to , which illustrate an embodiment of the method for roughness machining a sputtering surface of a target according to the present invention.
Referring to fig. 2 to 4, the method for processing the roughness of the sputtering surface of the target of the present invention includes the following steps:
in step 100, are taken and identified a machining region 12 to be sputtered and a non-machining region 14 not to be sputtered.
Step 200, coating the non-processing area 14 on the target 10 with a tape 20, and blocking the impact of the external force on the non-processing area 14 through the coating of the tape 20, in practice, the tape 2 is selected from or a combination thereof among a Polyester (PET) tape, a Polyethylene (PE) tape, a polyvinyl chloride (PVC) tape, a masking Paper tape (Crepe Paper), a Glass Cloth tape (Glass Cloth), a silicon tape (Silicone), and an Acrylic tape (Acrylic).
Step 300, blasting sand on the target 10 in the machining area 12, and then blasting the sand through a sand blasting device (such as a sand blasting gun)Accelerating the material, and performing sand blasting treatment on the processing area 12 of the target material 10 to form a rough surface with average roughness (Ra) of 4-6 microns (mum) and uniformity of less than 10% in the processing area 12, wherein the non-processing area 14 is not affected by the protection of the adhesive tape 2, when the sand material is selected from or the combination of white alumina sand and titanium dioxide sand with the grain size of No. 40-50, and as for the preferred embodiment of the sand blasting operation, the sand blasting operation is recommended to adopt an angle of 4-10 kg/cm and an angle of 10-60 degrees with a distance of about 20-40 cm from the target material 102The target 10 is sandblasted.
Step 400, spraying molybdenum coating materials on the processing area 12 on the target 10, hot melting the molybdenum (Mo) coating materials through a thermal spraying device, and coating the processing area 12 to enable the processing area 12 to form a rough surface with the average roughness (Ra) of 18-20 micrometers (mum) and the uniformity of less than 10%.
The basic principle of a conventional thermal spraying apparatus, such as an electric arc spraying apparatus, is to bring two metal wires, each having a positive and a negative electricity, into contact with each other to generate an electric arc, instantaneously generate high heat to melt a coating material (metal wire), blow the molten coating material to a target object through high-pressure air to form a deposit, and finally form a coating after cooling and solidification.
In practice, the molybdenum (Mo) coating material is selected from molybdenum wire with purity of 99.95 and wire diameter of 1.6mm, and as a preferred embodiment of the coating operation, it is recommended to use a thermal spraying device at an angle of 80-90 degrees from the target material 10 of about 50-80 cm, and 4-8 such as kg/cm2The molybdenum (Mo) coating material is sprayed on the target material 10 after a current with a power of about 10kw is applied.
Step 500, removing the adhesive tape 20 and wiping the target material 10 until the cleanliness meets the class1000 standard, removing the adhesive tape 20 covered and adhered on the target material 10, wiping and cleaning the target material 10 by matching with wiping pieces until the cleanliness of the target material 10 meets the class1000 of the clean room specification, wherein the wiping pieces are selected from wiping cloths (or dust-free paper) in the class1000 to class1 class interval, and cleaning is performed by alternately using the wiping cloths from size to size in sequence.
Therefore, the above is an preferred embodiment provided by the present invention, and the roughness processing method of the sputtering surface of the target is introduced, and then the operation characteristics of the present invention are introduced as follows:
the sandblasting process forms a rough surface with an average roughness (Ra) of 4-6 micrometers (μm) and a uniformity of less than 10% in the processing region 12 of the target 10, which is intended to serve as a primer for forming uniform surfaces on the processing region 12 before the spraying operation.
The cleaning process eliminates the wet cleaning means, and the target material 10 is wiped for multiple times by using the wiping means in cooperation with wiping pieces of different levels, so that the cleanliness of the target material 10 meets the class1000 specification of a clean room. This avoids the disadvantage of the wet cleaning process that would cause the target 10 to be wet and corroded.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention, and is not intended to limit the scope of the embodiments of the present invention, so that equivalent variations of , which are obvious to those skilled in the art, and other variations, will fall within the scope of the present invention.

Claims (7)

  1. The roughness processing method of the sputtering surface of the target of 1 and kinds is characterized by comprising the following steps of;
    (a) target material is taken, processing area to be sputtered on the target material and non-processing area not to be sputtered on the target material are confirmed;
    (b) coating the non-processing area with adhesive tape;
    (c) carrying out sand blasting treatment on the processing area by using an sand material to form a rough surface with the average roughness (Ra) of 4-6 micrometers (mum) and the uniformity of less than 10% on the surface of the processing area;
    (d) spraying molybdenum coating material on the processing area to form a rough surface with average roughness (Ra) of 18-20 μm and uniformity below 10%;
    (e) and removing the adhesive tape and matching with an wiping piece to wipe the target until the cleanliness of the target meets the requirement of dust-free class 1000.
  2. 2. The method for roughening a sputtering surface of a target according to claim 1, wherein the tape is selected from the group consisting of Polyester (PET) tape, Polyethylene (PE) tape, polyvinyl chloride (PVC) tape, masking Paper tape (Crepe Paper), Glass Cloth tape (Glass Cloth), Silicone tape (Silicone), and Acrylic tape (Acrylic), or a combination thereof.
  3. 3. The method according to claim 1, wherein the grit material is selected from or a combination thereof selected from white alumina grit or titania grit having a size of No. 40 to 50.
  4. 4. The method of claim 3, wherein the blasting in step (c) is performed at an angle of 10 to 60 degrees at a distance of 20 to 40 cm from the machining region and at an angle of 4 to 10kg/cm2The pressure of (2) blasting the machining area.
  5. 5. The method for processing the roughness of the sputtering surface of a target according to claim 1, wherein the molybdenum coating material is selected from molybdenum wires having a purity of 99.95 and a wire diameter of 1.6 mm.
  6. 6. The method according to claim 5, wherein the spraying treatment in step (d) is performed at an angle of 80 to 90 degrees at a distance of about 50 to 80 cm from the working area by using 4 to 8kg/cm2The air pressure of (c).
  7. 7. The method according to claim 1, wherein the wiper is a wiper cloth or a dust-free paper of class1000 to class 1.
CN201810806850.9A 2018-07-18 2018-07-18 Roughness processing method for target sputtering surface Pending CN110735118A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111805435A (en) * 2020-07-17 2020-10-23 合肥微睿光电科技有限公司 Surface treatment method of metal base for PECVD (plasma enhanced chemical vapor deposition) process
CN114714257A (en) * 2022-03-21 2022-07-08 合肥江丰电子材料有限公司 Sand blasting method for target material
CN114750079A (en) * 2022-04-24 2022-07-15 广东江丰电子材料有限公司 Preparation method of target material assembly
CN115537722A (en) * 2022-09-27 2022-12-30 深圳市黄金屋真空科技有限公司 Preparation process and product of conductive black and insulating black on same surface layer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1448996A (en) * 2002-04-04 2003-10-15 东曹株式会社 Silex glass spraying component and manufacturing method thereof
CN103481199A (en) * 2012-06-13 2014-01-01 宁波江丰电子材料有限公司 Target material processing method
CN104419902A (en) * 2013-09-03 2015-03-18 宁波江丰电子材料股份有限公司 Target treatment method
CN105274465A (en) * 2015-11-17 2016-01-27 沈阳仪表科学研究院有限公司 Regeneration method for clean rough surface of part in vacuum coating cavity

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1448996A (en) * 2002-04-04 2003-10-15 东曹株式会社 Silex glass spraying component and manufacturing method thereof
CN103481199A (en) * 2012-06-13 2014-01-01 宁波江丰电子材料有限公司 Target material processing method
CN104419902A (en) * 2013-09-03 2015-03-18 宁波江丰电子材料股份有限公司 Target treatment method
CN105274465A (en) * 2015-11-17 2016-01-27 沈阳仪表科学研究院有限公司 Regeneration method for clean rough surface of part in vacuum coating cavity

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111805435A (en) * 2020-07-17 2020-10-23 合肥微睿光电科技有限公司 Surface treatment method of metal base for PECVD (plasma enhanced chemical vapor deposition) process
CN114714257A (en) * 2022-03-21 2022-07-08 合肥江丰电子材料有限公司 Sand blasting method for target material
CN114750079A (en) * 2022-04-24 2022-07-15 广东江丰电子材料有限公司 Preparation method of target material assembly
CN115537722A (en) * 2022-09-27 2022-12-30 深圳市黄金屋真空科技有限公司 Preparation process and product of conductive black and insulating black on same surface layer
CN115537722B (en) * 2022-09-27 2023-08-11 深圳市黄金屋真空科技有限公司 Process for preparing conductive black and insulating black on same surface layer and product thereof

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