CN102560382A - Target and forming method thereof - Google Patents
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- CN102560382A CN102560382A CN2011104518764A CN201110451876A CN102560382A CN 102560382 A CN102560382 A CN 102560382A CN 2011104518764 A CN2011104518764 A CN 2011104518764A CN 201110451876 A CN201110451876 A CN 201110451876A CN 102560382 A CN102560382 A CN 102560382A
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Abstract
The invention discloses a target and a forming method thereof. The target comprises a back plate, a target blank, a sealed groove and a non-sputtered area, wherein the target blank is positioned on the back plate; the sealed groove is positioned in the back plate and encircles the target blank; the non-sputtered area is positioned on the lateral surface of the target blank and from the outer side of the target blank to the surface of the back plate of the sealed groove; and the non-sputtered area is provided with patterns. By shot blasting and patterning on the surface of the non-sputtered area of the target, the roughness of the target is improved, so that the adhesive force of an anti-sputtering substrate is improved, and peeling of the anti-sputtering substrate is greatly reduced.
Description
Technical field
The present invention relates to the metal sputtering field, relate in particular to a kind of target and forming method thereof.
Background technology
In the process that semiconducter device is made, sputter is that a very important film forms technology.Its basic mechanism is in sputterer; Particle (electronics, ion, neutral particle) bombardment solid surface with certain energy; Its surperficial atom might obtain enough energy through the collision with high energy particle and escape from the surface, on silicon chip, is moving under the effect of electrical forces or magnetic force then.
In the said process, the solid material that is bombarded is called target, and target is made up of the backboard (Backing Plate) of target blank (Target Blank) and support target blank.As everyone knows, the surface of target blank comprises the upper and lower surface of target blank and the side of target blank, and the lower surface of target blank is connected with above-mentioned backboard, and the upper surface of target blank is the sputter face of target.Target is installed in the sputterer; As shown in Figure 1; The high-vacuum chamber of sputterer is to be covered on sealing groove 103 places on the target backboard 101 and formed by vacuum (-tight) housing 104; Said sealing groove is arranged at the outside of the target blank 102 on the backboard 101 and centers on target blank 102; The surface that target sealing groove 103 is removed sputter face 105 with interior (being target 100 surfaces in the vacuum chamber) is called non-sputter face 106, and said non-sputter face 106 comprises that target blank 102 sides 1061 reach and the back plate surface 1062 at target blank 102 outsides to sealing groove 103 places.
Target blank can be divided into simple substance target blank, alloy target material blank, perhaps compound target blank.The simple substance target blank is generally metals such as highly purified Al, Ta, Ti, Cu.The alloy target material blank is titanium aluminium, ambrose alloy, titanium chromium etc.Compound target blank is silicon oxide, aluminum oxide.The backboard that supports blank adopts copper, aluminum to form usually.
The physical process that sputter prepares film comprises following six basic steps: 1. in the plasma body in the high vacuum chamber of sputterer, produce positive argon ion, and quicken to the target with negative potential; 2. obtain momentum at the accelerator intermediate ion, and bombardment target as sputter face; 3. ion clashes into (sputter) atom through physical process from the target as sputter face; 4. the atomic migration of being clashed into (sputter) is to silicon chip surface; 5. condensed and the formation film at silicon chip surface by the atom of sputter, with the material comparison of target blank, film has and its essentially identical material component; 6. additional materials is taken away by vacuum pump.In this process, the ion momentum of bombardment target as sputter face is quickened to produce by electric field or magnetic field.For example, publication number is that the Chinese patent of CN1763241A discloses a kind of sputtering target material and uses backboard, and target blank and this backboard are welded together, and has formed the target that sputter is used jointly.
But in the sputter procedure, the atom that sputters in the target as sputter face is deposited on silicon chip surface except meeting; Also can be deposited on other surfaces in the vacuum chamber; Comprise above-mentioned non-sputter face, that is, the target blank side reaches the back plate surface with the target blank outside to sealing groove.After sputter for some time; Some storess identical with the target composition (reverse sputtering material) can appear in the above-mentioned non-sputter face of target; The sticking power of these storess and target is not very big, is stacked into to a certain degree back because the influence of gravity and chamber internal electric field power, magnetic field force can peel off; Form paradoxical discharge, influence the sputter environment.
Summary of the invention
For addressing the above problem, the present invention provides a kind of target and forming method thereof, prevents that the reverse sputtering material from peeling off.It comprises
Backboard;
Target blank is positioned on the backboard;
Sealing groove is positioned on the backboard, and said sealing groove is around said target blank;
Non-sputtering zone is positioned at the target blank side and reaches from the back plate surface of the target blank outside to sealing groove;
Said non-sputtering zone has floral designs.
Optional, the size of said floral designs is greater than 60TPI, and less than 20TPI.
Optional, the degree of depth of said floral designs is greater than 0.4mm, and less than 0.6mm.
Optional, said floral designs are formed by a plurality of structure repeated arrangement, and said structure is that rhombus, circle, rectangle, square, Polygons or other are irregularly shaped.
The present invention also provides a kind of formation method of target; Target is provided, comprises backboard and be positioned at the target blank on the backboard, be positioned at the sealing groove on the backboard; Said sealing groove is positioned at the target blank side and reaches from the non-sputtering zone of the target blank outside to sealing groove back plate surface around said target blank; Said non-sputtering zone is carried out shot peening;
Said non-sputtering zone after the shot peening is carried out floral designs to be handled.
Optional, said floral designs are treated to annular knurl, rolling and wire drawing processing.
Optional, the size of said floral designs is greater than 60TPI, and less than 20TPI.
Optional, the degree of depth of said floral designs is greater than 0.4mm, and less than 0.6mm.
Optional, said floral designs are formed by a plurality of structure repeated arrangement, and said structure is that rhombus, circle, rectangle, square, Polygons or other are irregularly shaped.
Optional, the sand grains model that said shot peening adopts is No. 46 white fused aluminas.
Optional, the air pressure in the said shot peening is 0.5Mpa～0.6Mpa.
Optional, the nozzle in the said shot peening is 80mm～100mm to the distance of said non-sputter face.
Optional, the said shot peening time is 8min～10min.
Compared with prior art, technical scheme of the present invention has the following advantages:
(1) handles through the above-mentioned non-sputter face of target being carried out shot-peening and floral designs; Increase its roughness; Thereby increased the adhesive power of reverse sputtering material on target, reduced the situation that the reverse sputtering material peels off greatly, and then reduced the situation of paradoxical discharge in the high-vacuum chamber; On silicon chip, form the rete of good uniformity, improve the performance of semiconducter device.
(2) the roughness Ra of the non-sputter face after the shot peening is 5.08 μ m～7.62 μ m; Can improve the adsorptive power of reverse sputtering material on the one hand to target; On the other hand, the mechanical property of the above-mentioned non-sputter face of target, fatigue resistence obtain to improve, and follow-up floral designs are formed more easily.
Description of drawings
Through the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is that the non-sputter face of the target in the high-vacuum chamber of the prior art is piled up the diagrammatic cross-section of the target of reverse sputtering material along axis direction.
Fig. 2 is that reverse sputtering material shown in Figure 1 is piled up the details enlarged diagram of situation.
Fig. 3 is the floor map that the non-sputter face of the target among the present invention forms the target of floral designs.
Fig. 4 is that target among Fig. 3 is along the diagrammatic cross-section of BB ' direction.
Fig. 5 is the plane enlarged diagram of the floral designs among the present invention.
Fig. 6 is the section enlarged diagram of the floral designs among the present invention.
Fig. 7 is the synoptic diagram of target in sputterer among the present invention.
Fig. 8 is the enlarged diagram that the reverse sputtering material is piled up on the non-sputter face of the target among Fig. 7.
Fig. 9 is the schema of the formation method of a kind of target of providing of another embodiment of the present invention.
Embodiment
In actual production process, usually can owing to away from the electric field at target as sputter face center or magnetic field a little less than, and make that the ionic momentum of edge of bombardment target as sputter face is big inadequately; So clash into the momentum of (sputter) atom that from the target as sputter face also little; Not enough these atomic migrations form film to silicon chip, will be deposited on other surfaces in the vacuum chamber, comprise the non-sputter face of target; Be the target blank side and with the back plate surface of the target blank outside to sealing groove; After sputter for some time, pile up gradually, form stores.These storess are on the above-mentioned non-sputter face attached to target, and the sticking power between the target is not enough, is stacked into to a certain degree; Can peel off; In the reaction chamber of sputter, form paradoxical discharge, influence the homogeneity of rete of the formation of sputter, when situation is serious; Even can form the accumulation of the convex of sputter material at the edge of silicon chip, have a strong impact on the performance of the semiconducter device of made.
The present invention carries out shot-peening and floral designs to the above-mentioned non-sputter face of target and handles and increase material and the adhesive power of target of backwash on the above-mentioned non-sputter face of target, and preventing that these materials from falling down influences sputter.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Carrying out magnetron sputtering with the circular target of the titanium target blank of 8 cun (the about 300mm of diameter R) and backboard welding is example, explains that ins and outs of the present invention and effect are following.In the prior art, as shown in Figure 1, above-mentioned titanium target 100 comprises backboard 101 and is positioned at the target blank 102 on the backboard; Said target blank 102 areas are less than said backboard 101 areas; Sealing groove 103 on the backboard between the said target blank 102 and target 100 outsides, said sealing groove 103 is around said target blank 102, non-sputter face 106; That is, be positioned at target blank 102 sides 1061 and with the back plate surface 1062 of target blank 102 outsides to sealing groove.After for some time was carried out in sputter, the above-mentioned non-sputter face 106 of target 100 (titanium target) had been piled up some reverse sputtering materials 5.
On the titanium target, details enlarged view such as Fig. 2 that the reverse sputtering material is piled up situation illustrate the reverse sputtering material 5 above-mentioned non-sputter face attached to target 100 in layer.How piled up in such a manner, in sputter, what these reverse sputtering materials 5 easy one-tenth pieces perhaps became to stick together peels off, and causes paradoxical discharge at chamber, influences the sputter environment.
The target that forms of the target blank of other material in other embodiments; Like tantalum target; Perhaps most of target (hardness need satisfy the metal targets more than or equal to the 50HV condition) such as copper target all can have the situation that similar reverse sputtering material is piled up; And in other embodiments, according to the actual requirement of applied environment, sputtering equipment, target can be in square, rectangle, trilateral, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped) any.
As shown in Figure 3, after the above-mentioned non-sputter face of target 300 had been carried out shot-peening and floral designs processing, the back plate surface 3062 of target blank side 3061 (figure does not show) and target blank 302 outsides to sealing groove formed floral designs.The width of said target blank 302 outsides to the back plate surface 3062 of sealing groove is a.Sealing-ring (figure does not show) is placed in above-mentioned sealing groove 303 the insides; Sealing groove 303 and sealing-ring seal to being connected between the vacuum (-tight) housing (figure does not show) of above-mentioned target 300 and sputterer; If the surface to sealing groove 303 surfaces and the target 300 beyond the sealing groove 303 is carried out shot-peening and carried out the floral designs processing, can influence sealing effectiveness and the interior vacuum tightness of vacuum (-tight) housing between target 300 and the vacuum (-tight) housing.
Fig. 4 is that target among Fig. 3 is along the sectional view of BB ' direction.The said non-sputter face 306 of target is the side 3061 of target blank 302 and the back plate surface 3062 of target blank 302 outsides to sealing groove.The width a of the said target blank outside to the back plate surface 3062 of sealing groove confirms according to the situation that reverse sputtering material in the actual production is piled up; When the diameter of target blank 304 changes; Said width a also can change, and to preventing coming off of reverse sputtering material comparatively ideal effect is arranged.Wherein the size of target can also in 6 cun, 10 cun, 12 cun of present common-use size any.
Above-mentioned floral designs need satisfy certain roughness and the degree of depth could satisfy the requirement that target prevents that the reverse sputtering material from peeling off; The size of decorative pattern can be weighed the roughness of floral designs; Promptly refer to minimal structure in the decorative pattern in the per inch scope number (Tooth Per Inch, TPI); The degree of depth of decorative pattern is meant the bottom of minimal structure in the decorative pattern and the distance between the top.It will be understood by those skilled in the art that said decorative pattern is generally formed by a plurality of minimal structure repeated arrangement, this minimal structure can have a variety of shapes, and is irregularly shaped etc. like rhombus, circle, rectangle, square, Polygons or other.In the present embodiment, through production practice, the minimal structure of preferred floral designs is square; Fig. 5 is the plane enlarged diagram of floral designs, and Fig. 6 is the section enlarged diagram of floral designs, in conjunction with Fig. 5 and Fig. 6; The size of the said floral designs on the said non-sputter face of target 300 (3061 and 3062) is greater than 60TPI (Tooth Per Inchs), and less than 20TPI, is preferably 40TPI; The degree of depth h of said floral designs is greater than 0.4mm, and less than 0.6mm, is preferably 0.5mm; And, when carrying out the floral designs processing, need carry out strict control on the technology; Make the floral designs that form not have burr, the specification of the floral designs of above-mentioned non-sputter face makes target can better absorb the reverse sputtering material, reduces the situation of paradoxical discharge in the vacuum chamber.
The target that forms through above-mentioned steps puts into production and when using, actual effect has also shown the target that has above-mentioned floral designs in said non-sputter face in sputter, and the situation that the reverse sputtering material peels off has reduced a lot.The target 15 that process above-mentioned steps in the sputterer 10 as shown in Figure 7 forms; Comprise target blank 16 and backboard 17; Its non-sputter face 1 comprises the back board part surperficial 1 that is positioned at target blank 16 sides 1 ' and links to each other with the target blank side " have above-mentioned floral designs; and in sputter procedure, the situation that the reverse sputtering material peels off has reduced a lot.
As shown in the figure, Vakuumkammer 12 comprises columnar substantially sidewall 14, and sidewall is electrical ground.The sputter face 2 of sputtering target material 15 and non-sputter face 1 (said non-sputter face 1 comprises the side 1 ' of sputtering target material blank 16 and the back plate surface 1 of the target blank outside to sealing groove ") be sealed in the Vakuumkammer 12.Base electrode 22 is supported for the silicon chip 24 that will receive sputter-coated parallel relative with target blank 16, and Vakuumkammer 12 is symmetrical substantially about central axis 38 with target 15.Inboard between target blank 16 and silicon chip 24, the defining of shielding handled the space.
Sputter working gas (being preferably argon) is quantitatively from gas supply device 26 process mass flow control devices 28 inlet chambers.Unshowned vacuum pump system remains on the inside of Vakuumkammer 12 and is generally 10
-8Torr or lower extremely low basic pressure.During plasma igniting,, still subsequently this pressure is reduced to produce the amount supply argon pressure of about 5milliTorr chamber pressure.DC power supply 34 is pressed onto pact-600VDC with target 15 negative bias, the argon working gas is provoked into contain the plasma body of electronics and positive argon ion.Positive argon ion attracted to the target 15 of negative bias, and sputters atoms metal from the sputter face 2 of target 15.
After forming target 15 after the above-mentioned floral designs and carrying out the sputter of for some time, the situation that reverse sputtering material 5 is piled up on the above-mentioned non-sputter face 1 of its target 15 is as shown in Figure 7, in conjunction with enlarged view shown in Figure 8; The metal that reverse sputtering is returned can be stacked into the groove the inside of annular knurl and go; Fill and lead up groove, and increased the adhesivity of the above-mentioned non-sputter face 1 of above-mentioned metal and target, be not easy to peel off; Can improve film quality so that the rete on the silicon chip in the sputter 24 is more even.
Fig. 9 is the formation method of a kind of target of providing of another embodiment of the present invention, and is as shown in the figure, comprises the steps:
Step S91 provides target, comprises backboard and is positioned at the target blank on the backboard, is positioned at the sealing groove on the backboard, and said sealing groove is positioned at the target blank side and reaches from the non-sputter face of the target blank outside to sealing groove back plate surface around said target blank;
Step S92 carries out shot peening to said non-sputter face;
Step S93 carries out floral designs to the said non-sputter face after the shot peening and handles.
Be elaborated below in conjunction with accompanying drawing each step to the foregoing description.
At first, performing step S91 provides target; Comprise backboard and be positioned at the target blank on the backboard; Be positioned at the sealing groove on the backboard, said sealing groove is positioned at the target blank side and reaches from the non-sputter face of the target blank outside to sealing groove back plate surface around said target blank.
Target is provided, and the material of target can be the metal of hardness greater than 50HV.Actual requirement according to applied environment, sputtering equipment; The shape of target can be in square, rectangle, trilateral, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped) any; In the present embodiment; The preferable titanium target of selecting 8 cun circles for use is to be welded by titanium target blank and backboard.
Then, performing step S92 carries out shot peening with said non-sputter face.
In conjunction with Fig. 1, the above-mentioned non-back plate surface 1062 that face 106 comprises that target blank 102 sides 1061 reach from target blank 102 outsides to sealing groove of spattering is carried out shot peening to above-mentioned non-sputter face 106.Shot-peening is that employing pressurized air is power; To spray material with formation high-velocity jet bundle and arrive the above-mentioned non-sputter face 106 that needs to handle target like copper ore, silica sand, silicon carbide, iron sand, SEMEN AMOMI LONGILIGULA high-velocity jet; The microscopic appearance of the above-mentioned non-sputter face 106 of target is changed; Under the effect of spray material to the impact of the above-mentioned non-sputter face 106 of target and cutting; The above-mentioned non-sputter face 106 of target is cleaned and has certain roughness, whether the roughness of the non-sputter face after this shot peening has reached the standard of corresponding requirements, need weigh with the surface roughness Ra value of measuring.The roughness Ra of the non-sputter face after the shot peening of present embodiment is 5.08 μ m～7.62 μ m; The roughness of above-mentioned non-sputter face 106 is in this scope; Can improve the adsorptive power of reverse sputtering material on the one hand to target; On the other hand, the mechanical property of the above-mentioned non-sputter face 106 of target, fatigue resistence obtain to improve, and follow-up floral designs district is formed more easily.
The principal element that influences the shot-peening quality has: sand material, sand grains size, air pressure, jet length.The variation of any one parameter all can influence the effect of shot-peening to some extent, wherein is even more important for sand material, sand grains size, air pressure.
No. 46 white fused aluminas of selecting in the present embodiment to contain 46 white fused aluminas per square inch are as the sand grains that uses.Pour No. 46 white fused aluminas into shotblasting machine; The sand add-on is 2Kg first; Shotblasting machine air pressure scope is controlled at about 0.5Mpa～0.6MPa, and the nozzle of shot-peening rifle is 80mm～100mm to the distance range on the above-mentioned non-sputtering zone surface of target, and the shot-peening time is 8min～10min.According to aforesaid operations, the roughness Ra that can guarantee above-mentioned non-sputter face is 5.08 μ m～7.62 μ m.
As shown in Figure 1, the surperficial shot peening of above-mentioned non-sputtering zone is comprised carrying out shot peening to the back plate surface 1062 of sealing groove outside target blank 102 sides 1061 and the target blank, can carry out in two steps, also can carry out simultaneously.When carrying out shot peening in two steps, can earlier shot peening be carried out in target blank 102 sides 1061, shot peening is carried out to the target blank outside to the back plate surface 1062 of sealing groove in the back; Also can carry out shot peening to the target blank outside to the back plate surface 1062 of sealing groove earlier, shot peening is carried out to target blank 102 sides 1061 in the back.When carrying out shot peening simultaneously, two nozzles need be set two non-sputtering surfaces are carried out shot peening, can improve the working efficiency of shot peening.
It is pointed out that and can carry out above-mentioned shot peening to one piece of target, also can carry out shot peening simultaneously to many pieces of targets simultaneously, present embodiment is preferably 5 pieces, many pieces of targets is carried out shot peening simultaneously can increase work efficiency, and saves the working hour.
Further optimally, before carrying out S92, can also there be surface beyond the above-mentioned non-sputter face 106 of pair target to cover the step of protection, not only can makes the better effects if of follow-up shot peening, but also can guarantee that the sputter face of target and sealing groove are smooth.With special-purpose masking tape the surface beyond the above-mentioned non-sputter face 106 being protected, constructs by drawing in the protection zone, and adhesive tape must have certain viscosity and tensile strength, is difficult for during shot-peening breaking.
Further optimally, after shot peening, can also non-sputter face or the target material surface after the above-mentioned shot peening be cleaned, such as adopting deionized water or pure water to clean, scavenging period is 1min～2min.It is pointed out that and to carry out above-mentioned clean to one piece of target, also can carry out clean simultaneously many pieces of targets.
Further optimally, after shot peening, can carry out the roughness inspection to the said non-sputter face after the shot peening.
Behind the shot-peening, variation has taken place in the said non-sputter face roughness of target.Whether this roughness is complete, and all even standard that whether reaches corresponding requirements is directly measured the surface roughness Ra value with surface roughometer and carried out the roughness inspection, and surface roughometer is at every 2m
2The selected at least evaluation point in surface, getting evaluation length is 40mm, in this length range, surveys 5 points, gets its arithmetical av and evaluates surface roughness Ra value a little for this reason.After the present invention handled the roughness of the above-mentioned non-sputtering zone of target, the Ra value should be in the scope of 5.08 μ m～7.62 μ m.
At last, performing step S93 carries out floral designs to the said non-sputter face after the shot peening and handles.
In the present embodiment; The non-sputter face of shot peening is carried out the floral designs processing preferably said non-sputter face is carried out the annular knurl processing; Generally be on lathe, to form with the knurling tool roll extrusion, promptly form floral designs, the floral designs structure specifically please refer to an embodiment.Then adopt the method for mechanical polishing to remove the burr on the knurled pattern.
The annular knurl of above-mentioned non-sputter face handled comprise the annular knurl processing is carried out in the side of target blank and the back plate surface of target blank side to sealing groove, can carry out in two steps, also can carry out simultaneously.When carrying out the annular knurl processing in two steps, can carry out annular knurl to the side of target blank earlier and handle, the back is carried out annular knurl to the back plate surface of target blank side to sealing groove and is handled; Also can carry out annular knurl to the back plate surface of target blank side to sealing groove earlier and handle, the back is carried out annular knurl to the side of target blank and is handled.When carrying out the annular knurl processing simultaneously, two cutters need be set above-mentioned non-sputter face is carried out the annular knurl processing.
In other embodiments, the method for carrying out patterned can also be technologies such as rolling, wire drawing, as long as the technology that promptly can produce the actual requirement of decorative pattern and effect accords with production is all in protection scope of the present invention.
When the target that the process above-mentioned steps forms puts into production use; Actual effect has shown that also the target that has above-mentioned floral designs in above-mentioned non-sputter face is in sputter; The situation that the reverse sputtering material peels off has reduced a lot, prevents the paradoxical discharge phenomenon of vacuum chamber, improves the quality of forming film of silicon chip.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (13)
1. a target comprises
Backboard;
Target blank is positioned on the backboard;
Sealing groove is positioned on the backboard, and said sealing groove is around said target blank;
Non-sputtering zone is positioned at the target blank side and reaches from the back plate surface of the target blank outside to sealing groove;
It is characterized in that said non-sputtering zone has floral designs.
2. target as claimed in claim 1 is characterized in that, the size of said floral designs is greater than 60TPI, and less than 20TPI.
3. target as claimed in claim 1 is characterized in that, the degree of depth of said floral designs is greater than 0.4mm, and less than 0.6mm.
4. target as claimed in claim 1 is characterized in that, said floral designs are formed by a plurality of structure repeated arrangement, and said structure is that rhombus, circle, rectangle, square, Polygons or other are irregularly shaped.
5. the formation method of a target is characterized in that,
Target is provided, comprises backboard and be positioned at the target blank on the backboard, be positioned at the sealing groove on the backboard, said sealing groove is positioned at the target blank side and reaches from the non-sputter face of the target blank outside to sealing groove back plate surface around said target blank;
Said non-sputter face is carried out shot peening;
Said non-sputter face after the shot peening is carried out floral designs to be handled.
6. the formation method of target as claimed in claim 5 is characterized in that, said floral designs are treated to annular knurl, rolling and wire drawing processing.
7. the formation method of target as claimed in claim 5 is characterized in that, the size of said floral designs is greater than 60TPI, and less than 20TPI.
8. the formation method of target as claimed in claim 5 is characterized in that, the degree of depth of said floral designs is greater than 0.4mm, and less than 0.6mm.
9. the formation method of target as claimed in claim 5 is characterized in that, said floral designs are formed by a plurality of structure repeated arrangement, and said structure is that rhombus, circle, rectangle, square, Polygons or other are irregularly shaped.
10. the formation method of target as claimed in claim 5 is characterized in that, the sand grains model that said shot peening adopts is No. 46 white fused aluminas.
11. the formation method of target as claimed in claim 5 is characterized in that, the air pressure in the said shot peening is 0.5Mpa～0.6Mpa.
12. the formation method of target as claimed in claim 5 is characterized in that, the nozzle in the said shot peening is 80mm～100mm to the distance of said non-sputter face.
13. the formation method of target as claimed in claim 5 is characterized in that, the said shot peening time is 8min～10min.
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| CN108265274A (en) * | 2016-12-30 | 2018-07-10 | 宁波江丰电子材料股份有限公司 | The processing method of target material assembly |
| CN108486535A (en) * | 2018-05-17 | 2018-09-04 | 宁波江丰电子材料股份有限公司 | Target material assembly |
| CN108673064A (en) * | 2018-05-29 | 2018-10-19 | 宁波江丰电子材料股份有限公司 | The method of sputtering target material SB welding sandblasting rear protectings |
| CN108779554A (en) * | 2016-03-09 | 2018-11-09 | 捷客斯金属株式会社 | It can make to light stable sputtering target |
| CN109385608A (en) * | 2017-08-08 | 2019-02-26 | 宁波江丰电子材料股份有限公司 | Target material assembly and its manufacturing method |
| CN111270211A (en) * | 2020-04-03 | 2020-06-12 | 宁波江丰电子材料股份有限公司 | Treatment method for prolonging service life of target material |
| CN112359334A (en) * | 2020-10-21 | 2021-02-12 | 宁波江丰电子材料股份有限公司 | Target material assembly and machining method thereof |
| CN112775845A (en) * | 2020-12-25 | 2021-05-11 | 宁波江丰电子材料股份有限公司 | Processing method of aluminum target material |
| CN112959224A (en) * | 2021-02-03 | 2021-06-15 | 合肥江丰电子材料有限公司 | Method for preventing oxidation of target material after sand blasting |
| CN113151798A (en) * | 2021-04-29 | 2021-07-23 | 宁波江丰电子材料股份有限公司 | Target material assembly and machining method thereof |
| CN113878308A (en) * | 2021-10-11 | 2022-01-04 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1648280A (en) * | 2003-10-06 | 2005-08-03 | 黑罗伊斯有限公司 | Improved target having modified surface texture |
| CN101508096A (en) * | 2008-02-15 | 2009-08-19 | 爱发科材料股份有限公司 | Method for manufacturing back plate, back plate, sputtering cathode, sputtering apparatus and method for cleaning back plate |
| CN101597729A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of titanium target material surface |
| CN101597727A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of copper target material surface |
| CN101613849A (en) * | 2009-06-30 | 2009-12-30 | 宁波江丰电子材料有限公司 | The treatment process of surface of aluminum target material |
-
2011
- 2011-12-29 CN CN2011104518764A patent/CN102560382A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1648280A (en) * | 2003-10-06 | 2005-08-03 | 黑罗伊斯有限公司 | Improved target having modified surface texture |
| CN101508096A (en) * | 2008-02-15 | 2009-08-19 | 爱发科材料股份有限公司 | Method for manufacturing back plate, back plate, sputtering cathode, sputtering apparatus and method for cleaning back plate |
| CN101597729A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of titanium target material surface |
| CN101597727A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of copper target material surface |
| CN101613849A (en) * | 2009-06-30 | 2009-12-30 | 宁波江丰电子材料有限公司 | The treatment process of surface of aluminum target material |
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|---|---|---|---|---|
| CN108779554B (en) * | 2016-03-09 | 2020-12-01 | 捷客斯金属株式会社 | Sputtering target capable of stabilizing ignition |
| CN108779554A (en) * | 2016-03-09 | 2018-11-09 | 捷客斯金属株式会社 | It can make to light stable sputtering target |
| CN107513691A (en) * | 2016-06-17 | 2017-12-26 | 宁波江丰电子材料股份有限公司 | Target material assembly and its processing method |
| CN108202292A (en) * | 2016-12-20 | 2018-06-26 | 宁波江丰电子材料股份有限公司 | Aluminium target production method |
| CN108202292B (en) * | 2016-12-20 | 2020-04-07 | 宁波江丰电子材料股份有限公司 | Method for manufacturing aluminum target |
| CN108265274A (en) * | 2016-12-30 | 2018-07-10 | 宁波江丰电子材料股份有限公司 | The processing method of target material assembly |
| CN109385608A (en) * | 2017-08-08 | 2019-02-26 | 宁波江丰电子材料股份有限公司 | Target material assembly and its manufacturing method |
| CN108486535A (en) * | 2018-05-17 | 2018-09-04 | 宁波江丰电子材料股份有限公司 | Target material assembly |
| CN108673064A (en) * | 2018-05-29 | 2018-10-19 | 宁波江丰电子材料股份有限公司 | The method of sputtering target material SB welding sandblasting rear protectings |
| CN111270211A (en) * | 2020-04-03 | 2020-06-12 | 宁波江丰电子材料股份有限公司 | Treatment method for prolonging service life of target material |
| CN112359334A (en) * | 2020-10-21 | 2021-02-12 | 宁波江丰电子材料股份有限公司 | Target material assembly and machining method thereof |
| CN112775845A (en) * | 2020-12-25 | 2021-05-11 | 宁波江丰电子材料股份有限公司 | Processing method of aluminum target material |
| CN112775845B (en) * | 2020-12-25 | 2022-04-12 | 宁波江丰电子材料股份有限公司 | Processing method of aluminum target material |
| CN112959224A (en) * | 2021-02-03 | 2021-06-15 | 合肥江丰电子材料有限公司 | Method for preventing oxidation of target material after sand blasting |
| CN113151798A (en) * | 2021-04-29 | 2021-07-23 | 宁波江丰电子材料股份有限公司 | Target material assembly and machining method thereof |
| CN113878308A (en) * | 2021-10-11 | 2022-01-04 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
| CN113878308B (en) * | 2021-10-11 | 2022-12-30 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
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Application publication date: 20120711 |