CN101508096A - Method for manufacturing back plate, back plate, sputtering cathode, sputtering apparatus and method for cleaning back plate - Google Patents
Method for manufacturing back plate, back plate, sputtering cathode, sputtering apparatus and method for cleaning back plate Download PDFInfo
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- CN101508096A CN101508096A CNA2009100074502A CN200910007450A CN101508096A CN 101508096 A CN101508096 A CN 101508096A CN A2009100074502 A CNA2009100074502 A CN A2009100074502A CN 200910007450 A CN200910007450 A CN 200910007450A CN 101508096 A CN101508096 A CN 101508096A
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- blasting treatment
- aforementioned
- backboard
- treatment portion
- back plate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- Chemical Kinetics & Catalysis (AREA)
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- Physical Vapour Deposition (AREA)
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Abstract
The invention provides a method of producing backboard for improving the quality of the film formed on the substrate and the production efficiency, and related technologies. The technical proposal comprises: using blasting materials for blasting a processing backboard (1) for forming a blasting processing portion; wherein the blasting processing portion (5) is adhered with fixed blasting materials and penetrated blasting materials. The film accumulated on the penetrated blasting material is easy to peel off and mixed into the film on the substrate as foreign matters. The blasting materials penetrated in the blasting processing portion (5) cannot be removed by a simple cleaning method. So, the backboard (1) is cleaned by the sequence of ultrasonic cleaning, erosion processing and ultrasonic cleaning. By aid of the cleaning in the three steps, the blasting materials penetrated in the blasting processing portion (5) can be removed, so, the invention can improve the quality of the film formed on the substrate and the production efficiency.
Description
Technical field
The present invention relates to keep the backboard of sputtering target manufacture method, backboard, comprise this backboard sputter cathode, comprise the sputter equipment of this sputter cathode and the cleaning method of backboard.
Background technology
In the prior art, as film forming film technique on substrate, adopt sputtering method.In this sputtering method, with the noble gas ionizations such as Ar that import in the vacuum tank,, pound sputtering particle from the surface of target by this Ionized Ar collision sputtering target, on substrate, form film.
In addition, in a kind of magnetron sputtering method that utilizes magnetic field as sputtering method, utilize and be applied to the lip-deep magnetic field of target, the secondary electron that bombards out from the target surface carries out screw.Secondary electron and Ar collision by this screw increase owing to be used for the Ionized collision frequency of Ar, so, the film forming speed high speed.
In utilizing the film forming procedure of this sputtering method, there is such situation: utilize the sputtering particle that comes out from the target bombardment, form accumulating film in the low part of the sputtering yield of target (non-erosion areas), the backboard that keeps target or the various piece in the vacuum tank, this accumulating film causes ill effect to the film forming of the film on the substrate.For example, the part of accumulating film is peeled off, and produces particulate (unnecessary particle) in vacuum tank, and has such situation: because this particulate is blended in the film on the substrate as foreign matter, the quality of film can reduce.
As the technology relevant, for example, in patent documentation 1, disclosed a kind of by the technology that surface roughening is carried out in blasting treatment is carried out on the surface of target or the surface of backboard with this problem.This part that applied blasting treatment is caught thick particle (sputtering particle), prevents that thick particle from dispersing to substrate.
In addition, in patent documentation 2, the backboard that blasting treatment has partly been carried out on the surface has been described.By this blasting treatment, improve fitting tightly property attached to the film on the backboard, prevent that particulate (unnecessary particle) from sneaking between radome and the target, so, can make the discharge condition of sputter.
[patent documentation 1] spy opens flat 4-301074 communique ([0009] section)
[patent documentation 2] spy opens flat 10-30174 communique ([0020], [0023], Fig. 3)
Summary of the invention
But, utilizing patent documentation 1 or patent documentation 2 described methods, the surface of backboard is carried out under the situation of blasting treatment, do not know why can produce the particulate of burst from backboard.That is,, can produce agnogenic a lot of particulates from backboard conversely when in order to reduce the particulate toward back plate and to carry out blasting treatment.
Like this, when producing the particulate of burst, because this particulate is blended in the film on the substrate as foreign matter, yield rate significantly reduces, and production is caused obstacle.Particularly, along with the miniaturization of the Wiring pattern of the film on the substrate, sneak into the situation that a spot of particulate also can become great problem to film even exist.
The present inventor etc. in order to find out the reason of the burst particulate that produces from backboard, have observed concavo-convex (specific area), surface state of back plate surface etc.As a result, discoveries such as inventor remain in the residual sand-blast material in the blasting treatment portion of blasting treatment, the sand-blast material on adhering to, be fixed to blasting treatment portion, also exist the sand-blast material that thrusts blasting treatment portion.This sand-blast material that thrusts blasting treatment portion can not be removed from blasting treatment portion by simple cleaning.Can think that the film that is stacked on the sand-blast material that thrusts blasting treatment portion is peeled off easily, this becomes the reason of burst particulate.
In view of the foregoing, the purpose of this invention is to provide a kind of generation of particulate, manufacture method that realizes being formed on the quality of the film on the substrate and make the backboard of efficient raising of reducing, utilize the backboard of this manufacture method manufacturing and associated technology.
In order to achieve the above object, manufacture method according to backboard of the present invention is a kind of manufacture method that keeps the backboard of sputtering target, wherein, prepare back plate main body, by to carrying out blasting treatment as at least a portion outside the formation zone in the zone of the aforementioned sputtering target of formation of aforementioned back plate main body, form blasting treatment portion, clean aforementioned blasting treatment portion with ultrasonic wave, the aforementioned blasting treatment portion that corrodes or utilize that the cleaning fluid jet cleaning utilizes that aforementioned ultrasonic wave cleaned carries out the ultrasonic wave cleaning to aforementioned blasting treatment portion once more.
Like this, in the present invention, clean blasting treatment portion, make backboard by dividing 3 stages.Because by the cleaning in these 3 stages, can remove the sand-blast material that thrusts blasting treatment portion suitably, so, the generation of burst particulate can be reduced.Whereby, can realize being formed on the quality of the film on the substrate and the raising of making efficient.
In the manufacture method of above-mentioned backboard, the operation that forms aforementioned blasting treatment portion also can be above to surface roughness (Ra) 1 μ m with aforementioned blasting treatment portion surface roughening, below the 4 μ m.
Whereby, owing to can improve the fitting tightly property of the film that is deposited in blasting treatment portion, so, can further reduce the particulate that burst ground produces.
In the manufacture method of above-mentioned backboard, aforementioned ultrasonic wave matting also can be utilized the injection stream that has applied hyperacoustic cleaning fluid that 18kHz is above, 19kHz is following, aforementioned blasting treatment portion is carried out ultrasonic wave clean.
Whereby, can further remove the sand-blast material that thrusts blasting treatment portion suitably.
In the manufacture method of above-mentioned backboard, the pressure that also can make aforementioned injection stream is more than the 200kPa, below the 300kPa.
Whereby, can further remove the sand-blast material that thrusts blasting treatment portion suitably.
Backboard according to the present invention is the backboard that keeps sputtering target, comprise back plate main body and blasting treatment portion, described blasting treatment portion forms at least a portion outside the formation zone in zone of aforementioned sputtering target by the conduct to aforementioned back plate main body to carry out blasting treatment and form, surface roughness (Ra) is more than the 1 μ m, below the 4 μ m, and, the every 1cm of aforementioned sand-blast material that diameter of equivalent circle 10 μ m are above
2Below 4.
In backboard according to the present invention, the surface roughness by blasting treatment portion can improve the fitting tightly property of the film that is deposited in blasting treatment portion more than the 1 μ m, below the 4 μ m.And then, in the sand-blast material that remains in blasting treatment portion, by making the sand-blast material every 1cm of diameter of equivalent circle more than 10 μ m
2Below 4, can reduce the particulate that burst ground takes place.Whereby, can realize being formed on the quality of the film on the substrate and the raising of making efficient.
In above-mentioned backboard, aforementioned back plate main body can constitute by aluminium, copper, titanium, stainless steel or with any alloy as principal component of these materials.
According to backboard of the present invention, comprise: sputtering target, the back plate main body and the blasting treatment portion that keep aforementioned sputtering target, described blasting treatment portion forms at least a portion outside the formation zone in zone of aforementioned sputtering target by the conduct to aforementioned back plate main body to carry out blasting treatment and form, its surface roughness (Ra) is more than the 1 μ m, below the 4 μ m, and, the every 1cm of aforementioned sand-blast material that diameter of equivalent circle 10 μ m are above
2Below 4.
Sputter equipment according to the present invention comprises vacuum tank and sputter cathode, described sputter cathode has: sputtering target, the back plate main body and the blasting treatment portion that keep aforementioned sputtering target, described blasting treatment portion forms at least a portion outside the formation zone in zone of aforementioned sputtering target by the conduct to aforementioned back plate main body to carry out blasting treatment and form, its surface roughness (Ra) is more than the 1 μ m, below the 4 μ m, and, the every 1cm of aforementioned sand-blast material that diameter of equivalent circle 10 μ m are above
2 Below 4, described sputter cathode is used for by applying voltage sputtering particle being dispersed in aforementioned vacuum tank.
In this manual, so-called " sputter cathode " comprising: sputtering target and backboard are engaged and the conjugant that forms, integrally formed body that backboard and backboard are integrally formed into.
Cleaning method according to backboard of the present invention, clean carrying out ultrasonic wave by the blasting treatment portion that backboard is carried out blasting treatment formation, corrode or utilize cleaning fluid to corrode to clean the aforementioned blasting treatment portion of being cleaned by aforementioned ultrasonic wave, ultrasonic wave cleans aforementioned blasting treatment portion once more.
In the cleaning method of above-mentioned backboard, aforementioned ultrasonic wave matting also can be to utilize the injection stream apply hyperacoustic cleaning fluid that 18kHz is above, 19kHz is following that aforementioned blasting treatment portion is carried out ultrasonic wave to clean.
In the cleaning method of above-mentioned backboard, the pressure that can make aforementioned injection stream is more than the 200kPa, below the 300kPa.
As mentioned above, according to the present invention, can provide a kind of generation that reduces particulate, realize being formed on the quality of the film on the substrate and making the backboard manufacture method of the raising of efficient, the backboard that utilizes this manufacture method to make, and associated technology.
Description of drawings
Fig. 1 is the schematic diagram of expression according to the sputter equipment of a kind of form of implementation of the present invention.
Fig. 2 has the sputter cathode of sputter equipment and near the diagram of the amplification the radome.
Fig. 3 is the decomposition diagram of sputter cathode.
Fig. 4 is the flow chart of expression according to the manufacture method of the backboard of a kind of form of implementation of the present invention.
Fig. 5 is the schematic diagram of an example of expression cleaning device.
Fig. 6 is the material of eight kinds of forms of implementation of first kind of form of implementation to the of comparison, the backboard that reaches first comparative example to the, seven comparative examples and the diagram that surface roughness is used.
[symbol description]
1... backboard
2... sputtering target
3... form the zone
5... blasting treatment portion
10... sputter cathode
20... vacuum tank
100... sputter equipment
The specific embodiment
Below based on description of drawings form of implementation of the present invention.
Fig. 1 is the schematic diagram of expression according to the sputter equipment of a kind of form of implementation of the present invention.Fig. 2 has the sputter cathode of this sputter equipment and near the diagram of the amplification the radome.In this form of implementation, as the example of sputter equipment, the sputter equipment of enumerating the magnetic control mode describes.
As shown in Figure 1, sputter equipment 100 comprises: the vacuum tank 20 of ground connection, be configured in these vacuum tank 20 inside sputter cathode 10, dare near this sputter cathode 10 forming the magnetic field formation portion 30 of Distribution of Magnetic Field.
In vacuum tank 20, will be connected to the Vacuum exhaust tube 23 on the vavuum pump 28 and be used for gases such as for example Ar are imported to vacuum tank 20 gas inside ingress pipes 24.The objective table 22 that supports processed substrate 27, plays anodize is arranged in vacuum tank 20 internal configurations.In addition, in vacuum tank 20,, sputter cathode 10 is set in mode with objective table 22 subtends via insulating materials 25.
Sputter cathode 10 is by sputtering target 2 (below be referred to as " target ") and be used to keep the backboard 1 of this target 2 to constitute.This backboard 1 is applied in negative high voltage.Around sputter cathode 10, be provided for preventing that parts outside the target are by the radome 26 of sputter.This radome 26 also can ground connection.Has little gap 8 (with reference to Fig. 2) between sputter cathode 10 and the radome 26.
On backboard 1 and the direction face that target 2 is set (surface) rightabout (back side), configuration magnetic field formation portion 30.This magnetic field formation portion 30 is made of the first magnet 32a of ring-type, the columniform second magnet 32b that is positioned at the central authorities of this first magnet 32a, the magnet support 31 that supports these magnet 32a, 32b.The first magnet 32a and the second magnet 32b can be permanent magnets, also can be electromagnet.The magnetic pole of the backboard side of the first magnet 32a and the second magnet 32b is respectively different magnetic pole.Whereby, between first magnet and second magnet, form the magnetic line of force, form Distribution of Magnetic Field shown in Figure 1 at the near surface of target 2.
Fig. 3 is the decomposition diagram of sputter cathode 10.As shown in Figure 3,1 one-tenth of backboard is discoid, comprising: have surperficial 1a, lateral circle surface 1b, back side 1c as the formation zone 3 in the zone that forms target 2.Target 2 is discoid too, has: by surperficial 2a, the lateral circle surface 2b of for example Ar sputter, the back side 2c that engages with backboard 1.The formation zone 3 of backboard 1, the back side 2c of target 2 for example are joined together by utilizing suitable scolder to weld.The shape of target 2 and backboard 1 is not limited to discoid, and its surface can be the tabular of rectangle, also can be other shape.
In Fig. 3, backboard 1 and target 2 are joined together formation sputter cathode 10, still, for negative electrode 10, backboard 1 and target 2 also can be integrally formed into by same material.In this case, on the formation zone 3 of the surperficial 1a of backboard 1, form target 2.In this manual, sputter cathode 10 comprises the integrally formed body that backboard 1 and target 2 engaged the conjugant that forms and backboard 1 and target 2 are integrally formed into.
This blasting treatment portion 5, its surface roughness (Ra) is more than the 1 μ m, below the 4 μ m, and diameter of equivalent circle is the above every 1cm of sand-blast material of 10 μ m
2Below 4.The number of the sand-blast material that the scope of this surface roughness and diameter of equivalent circle 10 μ m are above is the sample that has various values by making, and carries out the value (with reference to the Fig. 6 that describes later) that sputter draws by actual.
Like this, because the surface roughness of the blasting treatment portion 5 by making backboard 1 is more than the 1 μ m, below the 4 μ m, can improve the fitting tightly property that is deposited in the film that forms in the blasting treatment portion 5 by the sputtering particle that comes out from target 2 bombardments, so, the generation of particulate can be reduced.And then, by making the every 1cm of sand-blast material more than the diameter of equivalent circle 10 μ m among the sand-blast material in the blasting treatment portion 5 that remains in backboard 1
2Below 4, can reduce owing to the film that is deposited on the residual sand-blast material that thrusts in the blasting treatment portion 5 is peeled off the particulate (particulate of burst) that produces easily.Whereby, can realize being formed on the quality of the film on the processed substrate 27 and the raising of making efficient.
Secondly, a kind of form of implementation for the manufacture method of backboard 1 describes.Fig. 4 is the flow chart of expression according to the manufacture method of the backboard of this form of implementation.
At first, prepare discoid backboard 1 (back plate main body) (step 1).The shape of this backboard 1 is not limited to aforesaid discoid, and its surperficial 1a can be the tabular of rectangle, also can be other shape.Backboard 1 for example constitutes by Ti, Al, Cu, stainless steel or with any alloy as principal component in these materials.Formation regional 3 and the back side 1c as the zone that forms (joints) target 2 of the surperficial 1a of backboard 1 are sheltered as the protection zone.In addition, under the situation that backboard 1 and target 2 are integrally formed into, the back side 1c of backboard 1, the surperficial 2a and the lateral circle surface 2b of target 2 are sheltered.
When backboard 1 is sheltered, by utilizing the blasting treatment device zone 4 and the lateral circle surface 1b of surperficial 1a are carried out blasting treatment, form blasting treatment portion 5 (steps 2).Carry out blasting treatment portion zone, can consider that zone of joining with gap 8 among each face 1a, 1b, 1c of backboard etc. suitably changes (with reference to Fig. 2).
For sand-blast material, consider the material of backboard 1, use SiC or Al
2O
3, bead etc.The particle diameter of described sand-blast material, average equivalent circular diameter are 100 μ m～500 μ m.The distance of the nozzle of blasting treatment device and blasting treatment face 5 for example is 150mm, and the air pressure of blasting treatment device is 4.0kg/cm
2～4.7kg/cm
2Like this, the particle diameter by suitably setting sand-blast material, with distance, the air pressure of nozzle, can form surface roughness (Ra) is the blasting treatment portion 5 of 1 μ m～4 μ m.Whereby, owing to can improve the fitting tightly property that is deposited in the film that forms in the blasting treatment portion 5 by sputtering particle, so, can reduce the generation of particulate.
Secondly, in order to remove the residual sand-blast material that remains in the blasting treatment portion 5, utilize the injection stream that applies hyperacoustic cleaning fluid that backboard 1 is carried out ultrasonic wave and clean (step 3).
Fig. 5 is the schematic diagram of an example of expression cleaning device.Cleaning device 50 comprises: rinse bath 52, be used in rinse bath 52 producing the injection stream of cleaning fluid 55 pump 53, be used for applying hyperacoustic supersonic generator 51 to the injection stream of cleaning fluid 55.Rinse bath 52 and pump 53 are connected by pipe arrangement 54.An example as cleaning device 50 can list structure shown in Figure 5, still, is not limited thereto, and also can utilize the cleaning device 50 with spline structure.
Secondly, the blasting treatment portion 5 to backboard 1 corrodes processing (step 4).In this case, for example,, blasting treatment portion 5 is corroded processing by backboard 1 is immersed in the fluorine nitric acid.The time of corroding for example is 3 minutes.The concentration of fluorine nitric acid or erosion time are suitably set according to the material of backboard and sand-blast material.Handle by this erosion, blasting treatment portion 5 and very small amount of the dissolving of interface of thrusting the sand-blast material in the blasting treatment portion 5 can be able to be weakened the degree of thrusting of sand-blast material.After corroding, backboard 1 is washed flushing fluorine nitric acid.Afterwards, remove masking jig.
Secondly, utilize cleaning device shown in Figure 5 50, the blasting treatment portion 5 to backboard 1 carries out ultrasonic wave cleaning (step 5) once more.In this case, also the same with step 3, the pressure of injection stream is more than the 200kPa, below the 300kPa, and frequency of ultrasonic is more than the 18kHz, below the 19kHz.In addition, scavenging period for example is 5 minutes.Be under the situation of conjugant of backboard 1 and target 2 at sputter cathode 10, afterwards the formation zone 3 of backboard 1 and the back side 2c of target welded, make sputtering target 10.
Like this, in this form of implementation, divide 3 stages to clean blasting treatment portion 5 (steps 3～step 5).By the cleaning in this 3 stages, can remove the sand-blast material that thrusts blasting treatment portion 5 rightly.Whereby, can reduce from the particulate of the burst of backboard 1 generation.Thereby, when utilizing this backboard 1 on processed substrate 27, to form film, can realize the quality of this film and the raising of making efficient.
In addition, in the ultrasonic wave cleaning process of step 3 and step 5, make frequency of ultrasonic more than the 18kHz, below the 19kHz, the pressure of injection stream is more than the 200kPa, below the 300kPa.That is, in ultrasonic wave cleans, not to utilize the general frequency band 30kHz～50kHz that adopts, but utilize the ultrasonic wave of the low-frequency band 18kHz～19kHz that does not generally adopt and injection stream to clean blasting treatment portion 5.Whereby, can make the above sand-blast material of diameter of equivalent circle 10 μ m that remains in the blasting treatment portion 5, every 1cm
2Below 4.Whereby, can further reduce the particulate of the burst that produces by backboard 1.In addition, be in the ultrasonic wave cleaning of 30kHz～50kHz in frequency, be difficult to the feasible above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m that remains in the blasting treatment portion 5
2At (with reference to the 6th and the 7th comparative example of describing later) below 4.
In step 4, also can replace corroding and handle, utilize cleaning fluid jet cleaning (water under high pressure cleaning) blasting treatment portion 5.In this case, make the ejection pressure of cleaning fluid at 200kgf/cm
2More than, 300kgf/cm
2Below, the water yield is more than the 20l/min, below the 30l/min.By this jet cleaning, also handle and weaken the degree of thrusting of thrusting the sand-blast material in the blasting treatment portion 5 the samely with above-mentioned erosion.
(first kind of form of implementation)
Secondly, first kind of form of implementation for the manufacture method of backboard 1 describes.In the following description,, give identical label, omit or simplify its explanation for having the same structure and the part of function with above-mentioned form of implementation.
Fig. 6 is the material that is used for the backboard of eight kinds of forms of implementation of first kind of form of implementation to the of comparison and first comparative example to the, seven comparative examples, the diagram of surface roughness.
In this form of implementation, at first, prepare backboard 1 (the back plate main body) (step 1) that constitutes by Cu.The conduct of sheltering the surperficial 1a of this backboard 1 forms the formation zone 3 and the back side 1c in the zone of (joint) target 2.
Secondly, zone 4 and the lateral circle surface 1b of surperficial 1a are carried out blasting treatment, form blasting treatment portion 5 (steps 2) by utilizing the blasting treatment device.For sand-blast material, adopt the SiC of diameter 100 μ m～300 μ m.Making the nozzle of blasting treatment device and the distance of blasting treatment face 5 is 150mm, and the air pressure that makes the blasting treatment device is 4.3kg/cm
2
When forming blasting treatment portion 5, utilize the injection stream that has applied hyperacoustic cleaning fluid that backboard 1 is carried out ultrasonic wave and clean (step 3).The pressure of injection stream is more than the 200kPa, below the 300kPa, and frequency of ultrasonic is 19kHz.In addition, scavenging period is 5 minutes.
Secondly, by backboard 1 was flooded 3 minutes, inject process portion 5 is corroded processing (step 4) in fluorine nitric acid (hydrogen fluoride 3%, nitric acid 10%).After the erosion, backboard 1 is washed or the hot water cleaning, afterwards, removed masking jig.
Utilization applies the injection stream of hyperacoustic cleaning fluid, and ultrasonic wave cleans backboard 1 (step 5) once more.The same in the pressure that makes injection stream and the step 3, for more than the 200kPa, below the 300kPa, frequency of ultrasonic is 19kHz.In addition, making scavenging period is 5 minutes, afterwards, backboard 1 is carried out drying handle.
The surface roughness of the blasting treatment face 5 of the backboard 1 of such manufacturing and the number of residual sand-blast material are estimated.Utilizing the result of the surface roughness (Ra) of roughness integrator mensuration is that surface roughness (Ra) is 2.2 μ m.In addition, utilize the metallurgical microscopes instrumentation to remain in and divide diameter of equivalent circle 10 μ m above sand-blast material in the blasting treatment portion 5, the result, residual sand-blast material is every 1cm
22 of average out to.
The formation zone 3 of this backboard 1 and the back side 2c of target are welded, make sputter cathode 10.For target, utilize diameter 250mm that the Ti of purity 5N constitutes, thickness titanium target for 6mm.This sputter cathode 10 is arranged on the sputter equipment 100, observes particulate a situation arises etc.
For sputter gas, use Ar, making gas pressure is 0.5Pa.In addition, making sputtering power is 7kw.As processed substrate 27, using diameter is the silicon chip 27 of 5 inches (125mm), forms the film of thickness 50nm on this silicon chip 27.
The number of sneaking into the particulate in the film on this silicon chip 27 is counted, estimated backboard 1 according to this form of implementation.The diameter of the particulate that is counted is counted particulate with 10,20,30,40,50,60,70,80,90,100 batches more than 0.2 μ m.As a result, be blended into 1 of particle number average out in the film on the silicon chip 27.
And then, under the situation of the silicon chip 27 that the particulate more than the twice of the average (under the situation in this form of implementation being 1) of finding this particulate is sneaked into, be estimated as the particulate that burst takes place from backboard 1, estimate the performance of backboard 1.In this form of implementation, the silicon chip 27 that the above particulate of the twice of the average of particulate is sneaked into is undiscovered, is 0.That is in the film forming procedure of utilization according to the film of the backboard 1 of this form of implementation, the particulate (0 time) of burst takes place.
(second kind of form of implementation)
Secondly, another form of implementation for the manufacture method of backboard 1 describes.In the following description, being that the center describes with the different point of above-mentioned first kind of form of implementation.In addition, for described the third form of implementation in back～the 7th comparative example, similarly, being that the center describes with first kind of different point of form of implementation.
In this form of implementation, the material of backboard 1 is a stainless steel.In addition, for the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 200 μ m～400 μ m, and the air pressure that makes the blasting treatment device is 4.6kg/cm
2
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 3.2 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
2One of average out to.
Utilization has the sputter equipment 100 of this backboard 1, forms film on silicon chip 27, measures the result of the particulate of sneaking into this film, and the mean value of particle number is 3.In addition, the silicon chip 27 of the particulate of average more than 2 times of particulate is sneaked in discovery, produces the particulate (0 time) of burst.
(the third form of implementation)
Secondly, further another form of implementation for the manufacture method of backboard 1 describes.
In this form of implementation, the material of backboard 1 is Ti.For the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 300 μ m～500 μ m, and the air pressure of blasting treatment device is 4.7kg/cm
2In addition, making the erosion time of the erosion processing of blasting treatment portion 5 is 2 minutes.
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes, is 3.8 μ m, remains in the sand-blast material every 1cm of diameter of equivalent circle more than 10 μ m in the blasting treatment portion 5
24 of average out to.
Utilize sputter equipment 100 to form film, measure the result of the particulate of sneaking into film, the mean value of particle number is 3.In addition, the frequency of the particulate of burst is 1 time.
(the 4th kind of form of implementation)
Secondly, further another form of implementation for the manufacture method of backboard 1 describes.
In this form of implementation, the material of backboard 1 is A1, and the air pressure of blasting treatment device is 4.0kg/cm
2
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 1.2 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
22 of average out to.
Utilize sputter equipment 100 to form film, the result who measures the particulate of sneaking into film is that the mean value of particle number is 2.In addition, the frequency of the particulate of burst is 0 time.
(the 5th kind of form of implementation)
Secondly, further another form of implementation for the manufacture method of backboard 1 describes.
In this form of implementation, for the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 200 μ m～400 μ m.
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 2.6 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
22 of average out to.
Utilize sputter equipment 100 to form film, the result who measures the particulate of sneaking into film is that the average particle number is 4.In addition, the frequency of the particulate of burst is 0 time.
(the 6th kind of form of implementation)
Secondly, further another form of implementation for the manufacture method of backboard 1 describes.
In this form of implementation, for the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 200 μ m～400 μ m, and the air pressure of blasting treatment device is 4.4kg/cm
2
And then in this form of implementation, (step 4) is utilized cleaning fluid jet cleaning (water under high pressure cleaning) blasting treatment portion 5 to replace corroding processing.In this case, the ejection pressure of cleaning fluid is 200kgf/cm
2, the water yield is 20l/min.
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 2.9 μ m, and the above sand-blast material of diameter of equivalent circle 10 μ m that remains in the blasting treatment portion 5 is every 1cm
23 of average out to.
Utilize sputter equipment 100 to form film, the result who measures the particulate of sneaking into film is that the average particle number is 4.In addition, the frequency of the particulate of burst is 0 time.
(the 7th kind of form of implementation)
Secondly, further another form of implementation for the manufacture method of backboard 1 describes.
In this form of implementation, for the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 300 μ m～500 μ m, and the air pressure of blasting treatment device is 4.5kg/cm
2
In this form of implementation, (step 4) is utilized jet cleaning, and the ejection pressure of cleaning fluid is 250kgf/cm to replace corroding processing
2, the water yield is 20l/min.
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 3.5 μ m, and the diameter of equivalent circle that remains in the blasting treatment portion 5 is the above every 1cm of sand-blast material of 10 μ m
22 of average out to.
Utilize sputter equipment 100 to form film, the result who measures the particulate of sneaking into film is that the average particle number is 3.In addition, the frequency of the particulate of burst is 0 time.
(the 8th kind of form of implementation)
Secondly, further another form of implementation for the manufacture method of backboard 1 describes.
In this form of implementation, the material of backboard 1 is an aluminium alloy.For the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 200 μ m～400 μ m, and the air pressure of blasting treatment device is 4.4kg/cm
2
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 3.0 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
22 of average out to.
Utilize sputter equipment 100 to form film, the result who measures the particulate of sneaking into film is that the mean value of particle number is 5.In addition, the frequency of the particulate of burst is 0 time.
(first comparative example)
Secondly, first comparative example for the manufacture method of backboard 1 describes.
In this first comparative example, for the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 300 μ m～500 μ m, and the air pressure of blasting treatment device is 5.3kg/cm
2
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 4.3 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
23 of average out to.
Utilize sputter equipment 100 to form film, the result who measures the particulate of sneaking into film is that the average particle number is 8.In addition, the frequency of the particulate of burst is 3 times.
As can be seen, utilize this first comparative example, surpass under 4.0 the situation in the surface roughness of blasting treatment portion 5, the effect of generation that reduces the particulate of particulate and burst descends.Like this, can think that the effect that reduces particulate when surface roughness greater than 4.0 time descends, be that the groove of blasting treatment portion 5 deepens because when surface roughness becomes big, and the fitting tightly property generation that is deposited in the film in this blasting treatment portion 5 changes and causes.
(second comparative example)
Secondly, second comparative example for the manufacture method of backboard 1 describes.
In this second comparative example, the air pressure that makes the blasting treatment device is 4.6kg/cm
2In addition, the erosion time of the erosion of blasting treatment portion 5 processing is 1 minute.
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 2.5 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
29 of average out to.
Utilize sputter equipment 100 to form film, the result who measures the particulate of sneaking into film is that the mean value of particle number is 8.In addition, the frequency of the particulate of burst is 3 times.
(the 3rd comparative example)
Secondly, the 3rd comparative example for the manufacture method of backboard 1 describes.
In the 3rd comparative example, the air pressure of blasting treatment device is 3.8kg/cm
2
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 0.8 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
25 of average out to.
Utilize sputter equipment 100 to form film, the result who measures the particulate of sneaking into film is that the mean value of particle number is 9.In addition, the frequency of the particulate of burst is 4 times.
(the 4th comparative example)
Secondly, the 4th comparative example for the manufacture method of backboard 1 describes.
In the 4th comparative example, for the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 200 μ m～400 μ m, and the air pressure of blasting treatment device is 4.5kg/cm
2
And then in the 4th comparative example, (ultrasonic wave cleaning treatment (the step 5) after step 4) and this erosion are handled is handled in the erosion of not carrying out after ultrasonic wave cleans.
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 2.8 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
215 of average out to.
Utilize sputter equipment 100 to form film, measure the result of the particulate of sneaking into film, 12 of particle number average out to.In addition, the frequency of the particulate of burst is 4 times.
(the 5th comparative example)
Secondly, the 5th comparative example for the manufacture method of backboard 1 describes.
In the 5th comparative example, do not carry out blasting treatment (step 2), corrode and handle (ultrasonic wave cleaning (the step 5) after step 4), erosion are handled.That is, 1 of backboard carries out ultrasonic wave cleaning (step 3).
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 0.5 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
20 of average out to.
Utilize sputter equipment 100 to form film, measure the result of the particulate of sneaking into film, 8 of particle number average out to.In addition, the frequency of the particulate of burst is 3 times.
(the 6th comparative example)
Secondly, the 6th comparative example for the manufacture method of backboard 1 describes.
In the 6th comparative example, for the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 200 μ m～400 μ m, and the air pressure of blasting treatment device is 4.4kg/cm
2
And then in comparative example 6, ((in the step 5), make frequency of ultrasonic is 30kHz to the ultrasonic wave cleaning after step 3) and erosion are handled to the ultrasonic wave cleaning after blasting treatment.
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 2.8 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
210 of average out to.
Utilize sputter equipment 100 to form film, measure the result of the particulate of sneaking into film, the mean value of particle number is 7.In addition, the frequency of the particulate of burst is 3 times.
(the 7th comparative example)
Secondly, the 7th comparative example for the manufacture method of backboard 1 describes.
In the 7th comparative example, for the particle diameter of the sand-blast material of blasting treatment, the mean value that makes diameter of equivalent circle is 200 μ m～400 μ m.
((in the step 5), make frequency of ultrasonic is 30kHz to the ultrasonic wave cleaning after step 3) and erosion are handled in ultrasonic wave cleaning after blasting treatment.In addition, (step 4) is utilized cleaning fluid jet cleaning blasting treatment portion 5 to replace corroding processing.In this case, making the ejection pressure of cleaning fluid is 250kgf/cm
2, the water yield is 20l/min.
Utilizing the surface roughness (Ra) of the blasting treatment portion 5 of the backboard 1 that this condition makes is 2.7 μ m, remains in the above every 1cm of sand-blast material of diameter of equivalent circle 10 μ m in the blasting treatment portion 5
212 of average out to.
Utilize sputter equipment 100 to form film, measure the result of the particulate of sneaking into film, the mean value of particle number is 7.In addition, the frequency of the particulate of burst is 3 times.
Claims (11)
1. a manufacture method that keeps the backboard that sputtering target uses is characterized in that,
Prepare back plate main body,
At least a portion that forms by the conduct to aforementioned back plate main body outside the formation zone in zone of aforementioned sputtering target is carried out blasting treatment, forms blasting treatment portion,
Aforementioned blasting treatment portion is carried out ultrasonic wave cleans,
The aforementioned blasting treatment portion that corrodes or utilize the cleaning fluid jet cleaning to be cleaned by aforementioned ultrasonic wave,
Ultrasonic wave cleans aforementioned blasting treatment portion once more.
2. the manufacture method of backboard as claimed in claim 1 is characterized in that,
Form the operation of aforementioned blasting treatment portion, with aforementioned blasting treatment portion surface roughening to surface roughness (Ra) more than the 1 μ m, below the 4 μ m.
3. the manufacture method of backboard as claimed in claim 2 is characterized in that,
Aforementioned ultrasonic wave matting is utilized the injection stream applied hyperacoustic cleaning fluid that 18kHz is above, 19kHz is following that aforementioned blasting treatment portion is carried out ultrasonic wave and is cleaned.
4. the manufacture method of backboard as claimed in claim 3 is characterized in that,
The pressure that makes aforementioned injection stream is more than the 200kPa, below the 300kPa.
5. backboard that keeps sputtering target to use comprises:
Back plate main body,
Blasting treatment portion, described blasting treatment portion forms at least a portion outside the formation zone in zone of aforementioned sputtering target by the conduct to aforementioned back plate main body to carry out blasting treatment and form, surface roughness (Ra) is more than the 1 μ m, below the 4 μ m, and, the every 1cm of aforementioned sand-blast material that diameter of equivalent circle 10 μ m are above
2Below 4.
6. backboard as claimed in claim 5 is characterized in that,
Aforementioned back plate main body is that the alloy of principal component constitutes by aluminium, copper, titanium, stainless steel or with any in these materials.
7. sputter cathode comprises:
Sputtering target,
The back plate main body that keeps aforementioned sputtering target,
Blasting treatment portion, described blasting treatment portion forms at least a portion outside the formation zone in zone of aforementioned sputtering target by the conduct to aforementioned back plate main body to carry out blasting treatment and form, surface roughness (Ra) is more than the 1 μ m, below the 4 μ m, and, the every 1cm of aforementioned sand-blast material that diameter of equivalent circle 10 μ m are above
2Below 4.
8. sputter equipment comprises:
Vacuum tank,
Sputter cathode, described sputter cathode has: sputtering target, the back plate main body, the blasting treatment portion that keep aforementioned sputtering target, described blasting treatment portion forms at least a portion outside the formation zone in zone of aforementioned sputtering target by the conduct to aforementioned back plate main body to carry out blasting treatment and form, surface roughness (Ra) is more than the 1 μ m, below the 4 μ m, and, the every 1cm of aforementioned sand-blast material that diameter of equivalent circle 10 μ m are above
2Below 4, described sputter cathode is used in aforementioned vacuum tank sputtering particle being dispersed by applying voltage.
9. the cleaning method of a backboard is characterized in that,
The blasting treatment portion that forms by the blasting treatment backboard is carried out ultrasonic wave cleans,
The aforementioned blasting treatment portion that corrodes or utilize the cleaning fluid jet cleaning to be cleaned by aforementioned ultrasonic wave,
Ultrasonic wave cleans aforementioned blasting treatment portion once more.
10. the cleaning method of backboard as claimed in claim 9 is characterized in that,
Aforementioned ultrasonic wave matting is utilized the injection stream applied hyperacoustic cleaning fluid that 18kHz is above, 19kHz is following, aforementioned blasting treatment portion is carried out ultrasonic wave clean.
11. the cleaning method of backboard as claimed in claim 9 is characterized in that,
The pressure that makes aforementioned injection stream is more than the 200kPa, below the 300kPa.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008034215A JP4965480B2 (en) | 2008-02-15 | 2008-02-15 | Manufacturing method of backing plate and cleaning method of backing plate |
| JP2008034215 | 2008-02-15 | ||
| JP2008-034215 | 2008-02-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101508096A true CN101508096A (en) | 2009-08-19 |
| CN101508096B CN101508096B (en) | 2012-11-28 |
Family
ID=41000712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100074502A Active CN101508096B (en) | 2008-02-15 | 2009-02-13 | Method for manufacturing back plate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4965480B2 (en) |
| KR (1) | KR20090088798A (en) |
| CN (1) | CN101508096B (en) |
| TW (1) | TWI457455B (en) |
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| CN102560382A (en) * | 2011-12-29 | 2012-07-11 | 余姚康富特电子材料有限公司 | Target and forming method thereof |
| CN104084888A (en) * | 2014-07-25 | 2014-10-08 | 大宝（东莞）模具切削工具有限公司 | Dental plate surface sand blasting technology |
| CN104369113A (en) * | 2013-08-16 | 2015-02-25 | 宁波江丰电子材料股份有限公司 | Target material sand blasting clamp and target material sand blasting method |
| CN105220161A (en) * | 2015-11-19 | 2016-01-06 | 东莞金稞电子科技有限公司 | Stainless process of surface treatment |
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| CN110684950A (en) * | 2018-08-28 | 2020-01-14 | 住华科技股份有限公司 | Sputtering target material and use method thereof |
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| JPH1022246A (en) * | 1996-07-04 | 1998-01-23 | Tadahiro Omi | Cleaning method |
| JPH1030174A (en) * | 1996-07-17 | 1998-02-03 | Advanced Display:Kk | Sputtering device and method for working backing plate used for the same device |
| JP2003031535A (en) * | 2001-07-11 | 2003-01-31 | Mitsubishi Electric Corp | Ultrasonic cleaning method of semiconductor manufacturing apparatus |
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| US20050072668A1 (en) * | 2003-10-06 | 2005-04-07 | Heraeus, Inc. | Sputter target having modified surface texture |
-
2008
- 2008-02-15 JP JP2008034215A patent/JP4965480B2/en active Active
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2009
- 2009-02-04 TW TW098103459A patent/TWI457455B/en active
- 2009-02-05 KR KR1020090009106A patent/KR20090088798A/en not_active Application Discontinuation
- 2009-02-13 CN CN2009100074502A patent/CN101508096B/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2009191324A (en) | 2009-08-27 |
| JP4965480B2 (en) | 2012-07-04 |
| TW200944607A (en) | 2009-11-01 |
| CN101508096B (en) | 2012-11-28 |
| TWI457455B (en) | 2014-10-21 |
| KR20090088798A (en) | 2009-08-20 |
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