TWI457455B - Method for manufacturing backing plate, backing plate, sputter cathode, sputtering apparatus, and method for cleaning backing plate - Google Patents

Description

Method for manufacturing support plate, support plate, sputtering cathode, sputtering device and cleaning method of support plate

The present invention relates to a method of manufacturing a support plate for holding a sputtering target, a support plate, a sputtering cathode including the support plate, a sputtering apparatus including the sputtering cathode, and a cleaning method of the support plate.

Conventionally, a sputtering method has been employed as a film forming technique for forming a film on a substrate. In the sputtering method, an inert gas such as argon (Ar) introduced into the vacuum chamber is ionized, and the ionized argon collides with the sputtering target, thereby striking the sputtered particles from the sputtering target, and A film is formed on the substrate.

Further, in the magnetron sputtering method using a magnetic field which is one of the sputtering methods, the secondary electrons which are struck from the surface of the sputtering target are spirally moved by the magnetic field applied to the sputtering surface. The secondary electrons that perform the spiral motion collide with the argon, so that the collision frequency for causing the ionization of argon increases, so that the film formation speed is increased.

In the film formation by the above sputtering method, the sputtering target which is struck from the sputtering target is supported by the sputtering target in a portion where the sputtering target has low sputtering efficiency (non-erosion area). A deposited film is formed in each of the plates or the vacuum chamber, and the deposited film may adversely affect the film formation of the film on the substrate. For example, one of the deposited films is partially peeled off to generate fine particles (unnecessary particles) in the vacuum chamber, and the fine particles are mixed as a foreign matter on the substrate, so that the quality of the film is lowered.

In the technique related to the above problems, for example, Patent Document 1 discloses that the surface of the sputtering target or the surface of the support plate is preliminarily treated by sand blasting. To roughen the technology. It is also described that the portion subjected to the blasting process captures coarse particles (sputtering particles) to prevent coarse particles from scattering on the substrate.

Further, Patent Document 2 describes a support plate in which a surface is partially blasted. By the blasting treatment, the adhesion of the film adhering to the support plate is enhanced to prevent the fine particles (unnecessary particles) from entering between the shield portion and the sputtering target, so that the discharge state of the sputtering can be stabilized.

Patent Document 1: Japanese Laid-Open Patent Publication No. Hei-4-301074 (paragraph [0009])

Patent Document 2: Japanese Laid-Open Patent Publication No. Hei 10-30174 (paragraph [0020], [0023], FIG. 3)

However, when the surface of the support plate is sandblasted by the method described in Patent Document 1 or Patent Document 2, sudden particles of unknown origin are generated from the support plate. That is, in order to reduce the amount of fine particles, the support plate is sandblasted, but there is a problem that most of the fine particles are not generated from the support plate.

When the sudden fine particles are generated as described above, since the fine particles are mixed as a foreign matter into the film on the substrate, the yield is remarkably lowered, which hinders production. In particular, with the miniaturization of the wiring pattern of the thin film on the substrate, even a small amount of fine particles are mixed into the film, which causes a serious problem.

The inventors of the present invention have the unevenness (specific surface area) and surface state of the surface of the support plate in order to ascertain the sudden generation of fine particles generated from the support plate. Etc. As a result, the inventors found that the residual blasting material remaining in the blast-treated blasting portion has a blasting material that is adhered to and fixed to the blasting portion, and has a blasting material that penetrates the blasting portion. The blasting material that penetrates the blasting treatment portion cannot be removed from the blasting treatment portion by simple washing. The film deposited on the blast material that penetrates the blasting treatment portion is easily peeled off, which is a cause of sudden microparticles.

In view of the above, it is an object of the present invention to provide a method for manufacturing a support plate that reduces the generation of fine particles to achieve an improvement in the quality and manufacturing efficiency of a film formed on a substrate, a support plate manufactured by the method, and related Technology.

In order to achieve the above object, a method for manufacturing a support plate of the present invention is a method for manufacturing a support plate for holding a sputtering target, the method having the following steps: preparing a support plate body; forming the aforementioned splash on the support plate body At least a part of the region other than the formation region of the target region is sandblasted to form a sandblasting treatment portion; the sandblasting portion is ultrasonically cleaned; and the sandblasting portion washed by the ultrasonic wave is etched or washed The jet cleaning is performed; the blasting portion is ultrasonically washed again.

As described above, in the present invention, the blasting treatment portion is washed in three stages to manufacture a support plate. By the three-stage washing, the blasting material that penetrates the blasting treatment portion can be appropriately removed, so that the generation of sudden granules can be reduced. Thereby, the quality and manufacturing efficiency of the film formed on the substrate can be improved.

In the above method of manufacturing a support plate, the sandblasting portion is formed In the step, the sandblasting treatment portion may be roughened to have a surface roughness (Ra) of 1 μm or more and 4 μm or less.

Thereby, since the adhesiveness of the film deposited in the blast processing part can be improved, the generation of sudden microparticles can be further reduced.

In the method of manufacturing the support plate, in the ultrasonic cleaning step, the sandblasting portion may be ultrasonically washed by a jet of a cleaning liquid to which ultrasonic waves of 18 kHz or more and 19 kHz or less are applied.

Thereby, the blast material that penetrates the blasting treatment portion can be appropriately removed.

In the method for producing the support plate, the pressure of the jet flow may be set to 200 kPa or more and 300 kPa or less.

Thereby, the blast material pierced into the blasting treatment portion can be removed more appropriately.

The support plate of the present invention is for holding a support plate of a sputtering target, the support plate having: a support plate body; and a sandblasting treatment portion formed by forming a region of the support plate body belonging to the sputtering target At least a part of the region other than the region is formed by sandblasting, and the surface roughness (Ra) is 1 μm or more and 4 μm or less, and there are four or less of the above-described sandblasting materials having a circular diameter of 10 μm or more per 1 cm ² .

In the support plate of the present invention, by setting the surface roughness of the support plate to 1 μm or more and 4 μm or less, the adhesion of the film deposited on the blast-treated portion can be improved. In addition, in the blasting material remaining in the blasting unit, the number of the blasting materials having an area of 10 μm or more in diameter is 4 or less per 1 cm ² , so that the occurrence of sudden granules can be reduced. Thereby, the quality and manufacturing efficiency of the film formed on the substrate can be improved.

In the above support plate, the support plate body may also be made of aluminum, copper, titanium, Stainless steel or an alloy containing either of these materials as a main component.

The sputter cathode of the present invention includes: a sputtering target; a support plate main body for holding the sputtering target; and a blasting treatment portion, which is outside a formation region of the support plate main body which is a region where the sputtering target is formed At least a part of the blasting material is formed by sand blasting, and the surface roughness (Ra) is 1 μm or more and 4 μm or less, and there are four or less of the above-mentioned blasting materials having an area circle diameter of 10 μm or more per 1 cm ² .

The sputtering apparatus of the present invention includes: a vacuum chamber; and a sputtering cathode that is applied with a voltage to cause the sputtering particles to scatter in the vacuum chamber, and has a sputtering target; and a support plate body for holding the sputtering The target and the blasting treatment portion are formed by sandblasting at least a part of the support plate main body other than the formation region of the region where the sputtering target is formed, and the surface roughness (Ra) is 1 μm or more and 4 μm or less, and each 1 cm. ² There are four or less of the aforementioned blasting materials having a circular diameter of 10 μm or more.

In the present specification, the "sputtering cathode" includes a bonded body formed by bonding a sputtering target and a support plate, and an integrally formed body in which the sputtering plate and the support plate are integrally formed.

The cleaning method of the support plate according to the present invention has the steps of: ultrasonically cleaning the blasting portion formed by sandblasting the support plate; etching the blasting portion subjected to the ultrasonic cleaning or The washing liquid was spray-washed; the blasting portion was ultrasonically washed again.

In the cleaning method of the support plate, the ultrasonic cleaning step is capable of ultrasonically washing the sandblasting portion by a jet of a cleaning liquid to which an ultrasonic wave of 18 kHz or more and 19 kHz or less is applied.

In the method of cleaning the support plate, the pressure of the jet flow may be set to 200 kPa or more and 300 kPa or less.

As described above, according to the present invention, it is possible to provide a method of manufacturing a support plate which reduces the generation of fine particles to achieve an improvement in the quality and manufacturing efficiency of a film formed on a substrate, a support plate manufactured by the manufacturing method, and related Technology.

Hereinafter, embodiments of the present invention will be described based on the drawings.

Fig. 1 is a schematic view showing a sputtering apparatus according to an embodiment of the present invention. Fig. 2 is an enlarged view showing the vicinity of a sputtering cathode and a shield portion of the sputtering apparatus. In the present embodiment, an example of a sputtering apparatus will be described by exemplifying a sputtering apparatus of a magnetron type.

As shown in Fig. 1, the sputtering apparatus 100 includes a vacuum chamber 20 that is grounded, a sputtering cathode 10 disposed inside the vacuum chamber 20, and a magnetic field for forming a magnetic field distribution in the vicinity of the sputtering cathode 10. Part 30.

A vacuum exhaust pipe 23 connected to the vacuum pump 28 and a gas introduction pipe 24 for introducing a gas such as argon into the vacuum chamber 20 are connected to the vacuum chamber 20. Inside the vacuum chamber 20, a pedestal 22 for supporting the substrate 27 to be processed and functioning as an anode is disposed. Further, in the vacuum chamber 20, the sputter cathode 10 is provided so as to be opposed to the pedestal 22 with the insulating material 25 interposed therebetween.

The sputtering cathode 10 is composed of a sputtering target 2 and a support plate 1 for holding the sputtering target 2. The support plate 1 is applied with a negative high voltage. Provided around the sputter cathode 10 to prevent splashing of parts other than sputtered palladium Shielding portion 26. The shield portion 26 can also be grounded. The sputter cathode 10 has a slight gap 8 between the shield portion 26 (see Fig. 2).

The magnetic field forming portion 30 is disposed in the direction of the surface (back surface) of the support plate 1 opposite to the surface (surface) on which the sputtering target 2 is provided. The magnetic field forming portion 30 is composed of a ring-shaped first magnet 32a, a second magnet 32b which is formed in the center of the first magnet 32a and has a columnar shape, and a magnet supporting portion 31 for supporting the magnets 32a and 32b. . The first magnet 32a and the second magnet 32b may be permanent magnets or electromagnets. The magnetic poles on the side of the support plate of the first and second magnets 32a and 32b are different from each other. Thereby, magnetic lines of force are formed between the first magnet and the second magnet, and the magnetic field distribution shown in FIG. 1 is formed in the vicinity of the surface of the sputtering target 2.

Figure 3 is an exploded perspective view of the sputter cathode 10. As shown in FIG. 3, the support plate 1 has a disk shape, and has a surface 1a, a side peripheral surface 1b, and a back surface 1c which are the formation regions 3 of the region in which the sputtering target 2 is formed. The sputtering target 2 is also in the shape of a disk, and has a surface 2a splashed by, for example, argon, a side peripheral surface 2b, and a back surface 2c joined to the support plate 1. The formation region 3 of the support plate 1 and the back surface 2c of the sputtering target 2 are joined by soldering using, for example, appropriate solder. The shape of the sputtering target 2 and the support plate 1 is not limited to a disk shape, and may be a flat plate shape having a rectangular surface or other shapes.

In the third drawing, the sputter cathode 10 is formed by bonding the support plate 1 and the sputtering target 2, but the sputter cathode 10 may integrally form the support plate 1 and the sputtering target 2 by the same material. At this time, the sputtering target 2 is also formed on the formation region 3 of the surface 1a of the support plate 1. In the present specification, the joint body formed by joining the support plate 1 and the sputtering target 2 is covered, and the support plate is integrally formed. 1 and the case where the sputtering target 2 is formed into a single body molded body will be described.

The support plate 1 is made of, for example, aluminum, copper, titanium, stainless steel, or an alloy containing any of these materials as a main component. The sputtering target 2 is formed of, for example, Ti, Al, Cu, Ni, Co, Ta, Au, Ag, Cr, Nb, Pt, Mo, and W.

The region 4 and the side peripheral surface 1b other than the formation region 3 of the surface 1a of the support plate (support plate main body) 1 are sandblasted by a sandblasting material to form the sandblasting treatment portion 5. In the present embodiment, as described above, the sputtering cathode 10 is provided between the shield portion 26 and has a slight gap 8 (see Fig. 2). When sputtering is performed, the sputtered particles which are struck from the sputtering target 2 intrude into the gap 8 to form a deposited film. Therefore, it is typical that the portion of the support plate 1 that contacts the gap 8, that is, the region 4 other than the formation region 3 of the surface 1a and the side peripheral surface 1b is the sandblasting portion 5. However, when, for example, the back surface 1c of the support plate 1 is in contact with the gap 8, or the like may be formed on the back surface 1c of the support plate, the back surface 1c may be subjected to sandblasting.

The blasting treatment portion 5 can be formed by sandblasting a portion of the region 4 of the surface 1a of the support plate, or can be formed by sandblasting a portion of the opposite side peripheral surface 1b. Alternatively, all or a part of the region 4 may be sandblasted without sandblasting the side peripheral surface 1b, or all or a part of the side peripheral surface 1b may be sandblasted without sandblasting the region 4. Formed by the processing unit. That is, as long as it is a portion other than the formation region 3 in the surface 1a, the side peripheral surface 1b, and the back surface 1c of the support plate 1, any portion can be subjected to sand blasting. Of course, the non-erosion area of the sputtering target 2 can also be sandblasted in the same manner.

The surface roughness (Ra) of the blast processing unit 5 is 1 μm or more and 4 μm or less, and there are four or less sandblasting materials having a circular diameter of 10 μm or more per 1 cm ² . The range of the surface roughness (Ra) and the number of the sandblasting materials having an equal-area circle diameter of 10 μm or more are derived by actually performing sputtering using samples having various values (see Table 1 below).

By setting the surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 to 1 μm or more and 4 μm or less, it is possible to increase the deposition of the sputtering particles that have been struck from the sputtering target 2 in the blast processing unit 5 . The adhesion of the film can reduce the generation of fine particles. In the blasting material of the blasting unit 5 of the support plate 1 , there are four or less blasting materials having a circular diameter of 10 μm or more per 1 cm ² , so that it is less likely to be deposited in the blasting treatment unit 5 . The fine particles (burst fine particles) generated by the film on the residual blast material are easily peeled off. Thereby, the quality and manufacturing efficiency of the film formed on the substrate 27 to be processed can be improved.

Next, an embodiment of a method of manufacturing the support plate 1 will be described. Fig. 4 is a flow chart showing a method of manufacturing the support plate of the embodiment.

First, a disk-shaped support plate 1 (support plate body) is prepared (step 1). The shape of the support plate 1 is not limited to a disc shape as described above, and the surface 1a may have a rectangular flat plate shape or may have other shapes. The support plate 1 is made of, for example, aluminum, copper, titanium, stainless steel, or an alloy containing any of these materials as a main component. The formation region 3 and the back surface 1c of the surface 1a of the support plate 1 belonging to the region where the sputtering target 2 is formed (joined) are used as a protective region to apply a mask. When the support plate 1 and the sputtering target 2 are integrally formed, the back surface 1c of the support plate 1 and the surface 2a and the side peripheral surface 2b of the sputtering target 2 are covered. cover.

After the support plate 1 is masked, the region 4 of the surface 1a and the side peripheral surface 1b are sandblasted by a sand blasting apparatus to form the blast processing unit 5 (step 2). The area where the blasting treatment is performed can be appropriately changed by considering the area of the respective faces 1a, 1b, and 1c of the support plate contacting the gap 8, and the like (see Fig. 2).

The blasting material is made of SiC, Al ₂ O ₃ , glass beads or the like in consideration of the material of the support plate 1 . The particle size of the blast material is set to an average of equal-area circle diameters of 100 μm to 500 μm. The distance between the nozzle of the blasting apparatus and the blast processing unit 5 is, for example, 150 mm, and the gas pressure of the blast processing apparatus is set to 4.0 kg/cm ² to 4.7 kg/cm ² . By appropriately setting the particle diameter of the blast material, the distance from the nozzle, and the gas pressure, the blasting treatment portion 5 having a surface roughness (Ra) of 1 μm to 4 μm can be formed. Thereby, the adhesion of the film formed by depositing the sputtered particles on the blast-treated portion 5 can be improved, and the generation of fine particles can be reduced.

Next, in order to remove the residual blast material remaining in the blast processing unit 5, the support plate 1 is ultrasonically washed by a jet of the ultrasonic cleaning liquid (step 3).

Fig. 5 is a schematic view showing an example of a washing device. The cleaning device 50 includes a cleaning tank 52, a pump 53 for generating a jet flow of the cleaning liquid 55 in the cleaning tank 52, and an ultrasonic transmitter 51 for applying a jet of ultrasonic waves to the cleaning liquid 55. . The cleaning tank 52 is a pump 53 connected by a pipe 54. Although the configuration shown in FIG. 5 is exemplified as the cleaning device 50, the present invention is not limited thereto, and a cleaning device 50 having a similar configuration may be used.

The support plate 1 is held in the washing tank 52, and is washed by a jet of the ultrasonic cleaning liquid 55 applied thereto. At this time, the pressure of the jet flow is set to 200 kPa or more and 300 kPa or less. The frequency of the ultrasonic wave is set to be 18 kHz or more and 19 kHz or less. Further, the washing time is set to, for example, 5 minutes. By this washing, the blasting material remaining in the residual blasting material of the blast processing unit 5, adhering or fixed to the blasting processing unit 5, and the blasting material which can be inserted into the blasting processing unit 5 can be removed from the blasting unit 5 Apply shock.

Next, the blast processing portion 5 of the support plate 1 is subjected to an etching treatment (step 4). At this time, for example, the blasting treatment portion 5 is etched by immersing the support plate 1 in fluoronitric acid. The etching time is set to, for example, 3 minutes. The concentration of fluoronitric acid and the etching time are appropriately set depending on the materials of the support plate and the blast material. By this etching treatment, the blasting treatment portion 5 and the boundary surface of the blast material which is inserted into the blasting treatment portion 5 can be dissolved in a small amount, and the penetration degree of the blast material can be reduced. After the etching, the support plate 1 was washed with water to rinse off the fluorine nitric acid. Then, remove the mask.

Next, the blast processing unit 5 of the support plate 1 is again ultrasonically washed by the cleaning device 50 of Fig. 5 (step 5). At this time, similarly to the above-described step 3, the pressure of the jet flow is set to 200 kPa or more and 300 kPa or less, and the frequency of the ultrasonic wave is set to 18 kHz or more and 19 kHz or less. Further, the washing time is set to, for example, 5 minutes. When the sputtering cathode 10 is a bonded body of the support plate 1 and the sputtering target 2, the formation region 3 of the support plate 1 and the back surface 2c of the sputtering target are bonded to each other to manufacture the sputtering cathode 10.

As described above, in the present embodiment, the blast processing unit 5 is cleaned in three stages (steps 3 to 5). With this three-stage wash, you can go appropriately In addition to the sandblasting material pierced into the blasting treatment section 5. Thereby, the sudden generation of fine particles generated from the support plate 1 is reduced. Therefore, when the support sheet 1 is used to form a film on the substrate 27 to be processed, the quality and manufacturing efficiency of the film can be improved.

Further, in the ultrasonic cleaning in the steps 3 and 5, the frequency of the ultrasonic wave is set to 18 kHz or more and 19 kHz or more, and the pressure of the jet flow is set to 200 kPa or more and 300 kPa or less. That is, in the ultrasonic cleaning, the blasting portion 5 is not washed by the frequency band of 30 kHz to 50 kHz which is generally used, but by ultrasonic waves and jets of 18 kHz to 19 kHz which are not normally used. . In this way, the sandblasting material having a diameter of 10 μm or more and the like having a diameter of 10 μm or more remaining in the sandblasting treatment unit 5 can be formed to have four or less per 1 cm ² . Thus, the sudden generation of fine particles generated from the support plate 1 can be reduced. In addition, in the ultrasonic cleaning of the frequency of 30 kHz to 50 kHz, it is difficult to form the blasting material having a diameter of 10 μm or more and the like having a diameter of 10 μm or more remaining in the blast processing unit 5 to be 4 or less per 1 cm ² (refer to the sixth and the 7 comparative examples).

In step 4, the blasting treatment unit 5 may be spray-washed (high-pressure water washing) instead of the etching treatment. At this time, the delivery pressure of the cleaning liquid is 200 kgf/cm ² or more and 300 kgf/cm ² or less, and the water amount is 201/min or more and 301/min or less. By the blast cleaning, the penetration degree of the blast material which is inserted into the blast processing unit 5 can be reduced similarly to the above etching treatment.

(First embodiment)

Next, an embodiment of a method of manufacturing the support plate 1 will be described. In the following description, the same components and functions as those of the above embodiment are provided. The same component symbols are marked and the description is omitted or simplified.

Table 1 is a comparison table of the material and surface roughness of the support sheets of the first to eighth embodiments and the first to seventh comparative examples.

In the present embodiment, first, a support plate 1 (support plate main body) made of copper is prepared (step 1). A mask is applied to the formation region 3 and the back surface 1c of the surface 1a of the support plate 1 belonging to the region where the sputtering target 2 is formed (joined).

Next, the region 4 of the surface 1a and the side peripheral surface 1b are sandblasted by a sand blasting apparatus to form the blast processing unit 5 (step 2). The blasting material is SiC having a diameter of 100 μm to 300 μm. The distance between the nozzle of the sandblasting apparatus and the sandblasting unit 5 is, for example, 150 mm, and the gas pressure of the sandblasting apparatus is 4.3 kg/cm ² .

After the sandblasting treatment unit 5 is formed, the support plate 1 is ultrasonically washed by a jet flow of the ultrasonic cleaning liquid (step 3). The pressure of the jet flow is set to 200 kPa or more and 300 kPa or less. The frequency of the ultrasonic wave is set to 19 kHz. Further, the washing time is set to, for example, 5 minutes.

Next, the support plate 1 is immersed in fluoronitric acid (3% hydrogen fluoride, 10% nitric acid) for 3 minutes, and the blasting treatment portion 5 is etched (step 4). The support plate 1 is washed with water or hot water after etching, and then the mask is removed.

The support plate 1 is again subjected to ultrasonic cleaning by a jet of a washing liquid to which ultrasonic waves are applied (step 5). Similarly to the above step 3, the pressure of the jet flow is set to 200 kPa or more and 300 kPa or less, and the frequency of the ultrasonic wave is set to 19 kHz. Further, the washing time is set to, for example, 5 minutes. Then, the support plate 1 is subjected to a drying process.

The surface roughness of the blast processing portion 5 of the support plate 1 manufactured as described above and the number of residual blast materials were evaluated. As a result of measuring the surface roughness (Ra) by a roughness measuring instrument, the surface roughness (Ra) was 2.2 μm. In addition, as a result of measuring the amount of the sandblasting material having a circle diameter of 10 μm or more and the like remaining in the sandblasting treatment unit 5 by a metal microscope, the residual blasting material was ^{two on} average per 1 cm ² .

The sputtering cathode 10 is produced by bonding the formation region 3 of the support plate 1 to the back surface 2c of the sputtering target 2. The sputtering target system was a titanium sputtering target having a diameter of 250 mm and a thickness of 6 mm composed of titanium having a purity of 5N. The sputtering cathode 10 is attached to the sputtering apparatus 100, and the state of generation of fine particles and the like are observed.

The sputtering gas system used argon and the gas pressure system was set to 0.5 Pa. Further, the sputtering power system was set to 7 kw. The substrate 27 to be processed is a silicon wafer 27 having a diameter of 5 inches (125 mm), and a film having a film thickness of 50 nm is formed on the germanium wafer 27.

The number of fine particles of the film mixed in the silicon wafer 27 was counted, and the support plate 1 of the present embodiment was evaluated. The diameter of the counted fine particles was set to 0.2 μm or more, and the fine particles were counted in batches of 10, 20, 30, 40, 50, 60, 70, 80, 90, and 100. As a result, the average number of fine particles of the film mixed in the silicon wafer 27 is one.

In addition, when the tantalum wafer 27 in which the fine particles of the average number of the fine particles (one in the present embodiment) are mixed or more is found, it is presumed that sudden particles are generated from the support plate 1, and the support plate 1 is evaluated. performance. In the present embodiment, it is not found that the tantalum wafer 27 in which fine particles of two or more times the average number of fine particles are mixed is zero. That is, in the film formation of the film using the support sheet 1 of the present embodiment, no sudden microparticles (0 times) were generated.

(Second embodiment)

Next, another embodiment of the method of manufacturing the support plate 1 will be described. In the following description, the differences from the first embodiment will be mainly described. In the third embodiment to the seventh comparative example, which will be described later, the differences from the first embodiment will be mainly described.

In the present embodiment, the material of the support plate 1 is stainless steel. Further, the average diameter of the area of the blasting sandblasting material is set to be 200 μm to 400 μm, and the gas pressure of the blasting apparatus is set to 4.6 kg/cm ² .

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the above-described condition is 3.2 μm, and the blasting material having a diameter of 10 μm or more or the like remaining in the blasting treatment unit 5 is one per 1 cm ² .

The sputtering apparatus 100 having the support plate 1 formed a film on the silicon wafer 27, and as a result of measuring the fine particles mixed in the film, the average number of fine particles was three. Further, it has not been found that the tantalum wafer 27 in which fine particles having two or more times the average number of fine particles are mixed does not generate sudden fine particles (0 times).

(Third embodiment)

Next, another embodiment of the method of manufacturing the support plate 1 will be described.

In the present embodiment, the material of the support plate 1 is made of titanium. The average diameter of the area of the blasting sandblasting material is 300 μm to 500 μm, and the gas pressure of the blasting apparatus is 4.7 kg/cm ² . The etching time of the etching process of the blast processing part 5 was set to 2 minutes.

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 manufactured under the conditions of the blasting treatment unit 5 is 3.8 μm, and the blasting material having a circular diameter of 10 μm or more, which is left in the blasting treatment unit 5, has an average of 4 per 1 cm ² . .

The film was formed into a film by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of the fine particles was three. In addition, the number of occurrences of sudden microparticles is one.

(Fourth embodiment)

Next, another embodiment of the method of manufacturing the support plate 1 will be described.

In the present embodiment, the material of the support plate 1 is aluminum, and the gas pressure of the sandblasting apparatus is set to 4.0 kg/cm ² .

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the above-described conditions is 1.2 μm, and the number of the blasting materials having the area circle diameter of 10 μm or more remaining in the blast processing unit 5 is ^{two on} average per 1 cm ² .

The film was formed by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of the fine particles was two. In addition, the number of occurrences of sudden microparticles is 0.

(Fifth Embodiment)

Next, another embodiment of the method of manufacturing the support plate 1 will be described.

In the present embodiment, the average diameter of the area circle of the particle size of the blasting sandblasting material is set to 200 μm to 400 μm.

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the conditions of the blasting treatment unit 5 is 2.6 μm, and the number of the blasting materials having the area circle diameter of 10 μm or more remaining in the blast processing unit 5 is ^{two on} average per 1 cm ² .

The film was formed by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of fine particles was four. In addition, the number of occurrences of sudden microparticles is 0.

(Sixth embodiment)

Next, another embodiment of the method of manufacturing the support plate 1 will be described.

In the present embodiment, the average diameter of the area of the blasting sandblasting material is 200 μm to 400 μm, and the gas pressure of the blasting apparatus is 4.4 kg/cm ² .

Further, in the present embodiment, the blasting treatment unit 5 is spray-washed (high-pressure water washing) with a cleaning liquid instead of the etching treatment (step 4). At this time, the delivery pressure of the washing liquid was set to 200 kgf/cm ² , and the water amount was set to 20 l/min.

The surface roughness (Ra) of the blast-treated portion 5 of the support sheet 1 produced under the above-described conditions is 2.9 μm, and the number of the blasting materials having the area circle diameter of 10 μm or more remaining in the blast processing unit 5 is three on average per 1 cm ² .

The film was formed by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of fine particles was four. In addition, the number of occurrences of sudden microparticles is 0.

(Seventh embodiment)

Next, another embodiment of the method of manufacturing the support plate 1 will be described.

In the present embodiment, the average diameter of the area of the blasting sandblasting material is 300 μm to 500 μm, and the gas pressure of the blasting apparatus is 4.5 kg/cm ² .

In the present embodiment, instead of the etching treatment (step 4), jet cleaning is employed, and the pressure of the cleaning liquid is set to 250 kgf/cm ² and the water amount is set to 20 l/min.

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the above-described conditions is 3.5 μm, and the number of the blasting materials having a circular diameter of 10 μm or more, which are left in the blast-treated portion 5, is ^{two on} average per 1 cm ² .

The film was formed into a film by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of the fine particles was three. In addition, the number of occurrences of sudden microparticles is 0.

(Eighth embodiment)

Next, another embodiment of the method of manufacturing the support plate 1 will be described.

In the present embodiment, the material of the support plate 1 is an aluminum alloy. Further, the average diameter of the area of the blasting sandblasting material is set to be 200 μm to 400 μm, and the gas pressure of the blasting apparatus is set to 4.4 kg/cm ² .

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the above-described conditions is 3.0 μm, and the number of the blasting materials having the area circle diameter of 10 μm or more remaining in the blast processing unit 5 is ^{two on} average per 1 cm ² .

The film was formed by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of fine particles was five. In addition, the number of occurrences of sudden microparticles is 0.

(First comparative example)

Next, a first comparative example of the method of manufacturing the support plate 1 will be described.

In the first comparative example, the average diameter of the area circle diameter of the blasting sandblasting material is 300 μm to 500 μm, and the gas pressure of the blasting apparatus is 5.3 kg/cm ² .

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the above-described condition is 4.3 μm, and the blasting material having a circular diameter of 10 μm or more, which is left in the blast processing unit 5, has an average of 3 per 1 cm ² . .

The film was formed into a film by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of the fine particles was eight. In addition, the number of sudden generations of microparticles was three.

According to the first comparative example, when the surface roughness (Ra) of the blast processing unit 5 exceeds 4.0, the effect of reducing the generation of fine particles and sudden microparticles is lowered.

When the surface roughness is more than 4.0, the reason why the fine particle reduction effect is lowered is that when the surface roughness is increased, the groove of the sandblasting treatment portion 5 is deepened, and the adhesion of the film deposited on the sandblasting portion 5 is improved. Causes variation.

(2nd comparative example)

Next, a second comparative example of the method of manufacturing the support plate 1 will be described.

In the second comparative example, the gas pressure of the blast processing apparatus was set to 4.6 kg/cm ² . In addition, the etching time of the etching process of the blast processing part 5 was set to 1 minute.

The surface roughness (Ra) of the blast-treated portion 5 of the support sheet 1 produced under the above-described conditions is 2.5 μm, and the blasting materials having a circular diameter of 10 μm or more, which are left in the blast-treated portion 5, have an average of nine per 1 cm ² .

The film was formed into a film by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of the fine particles was eight. In addition, the number of sudden generations of microparticles was three.

(3rd comparative example)

Next, a third comparative example of the method of manufacturing the support plate 1 will be described.

In the third comparative example, the gas pressure of the blast processing apparatus was set to 3.8 kg/cm ² .

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the above-described condition is 0.8 μm, and the number of the blasting materials having the area circle diameter of 10 μm or more remaining in the blast processing unit 5 is five on average per 1 cm ² .

The film was formed by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of fine particles was nine. In addition, the number of sudden generations of microparticles was four.

(4th comparative example)

Next, a fourth comparative example of the method of manufacturing the support plate 1 will be described.

In the fourth comparative example, the average diameter of the area circle diameter of the blasting sandblasting material is set to 200 μm to 400 μm, and the gas pressure of the blasting apparatus is set to 4.5 kg/cm ² .

Further, in the fourth comparative example, the etching treatment after the ultrasonic cleaning (step 4) and the ultrasonic cleaning after the etching processing (step 5) were not performed.

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the conditions of the blasting treatment unit 5 is 2.8 μm, and the blasting material having an area circle diameter of 10 μm or more, which is left in the blast processing unit 5, is 15 per 1 cm ² .

The film was formed into a film by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of fine particles was 12. In addition, the number of sudden generations of microparticles was four.

(Fifth Comparative Example)

Next, a fifth comparative example of the method of manufacturing the support plate 1 will be described.

In the fifth comparative example, the blasting treatment (step 2), the etching treatment (step 4), and the ultrasonic cleaning after the etching treatment were not performed (step 5). That is, the support plate 1 is only subjected to ultrasonic cleaning (step 3).

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the above-described conditions is 0.5 μm, and the blasting materials having a circular diameter of 10 μm or more, which are left in the blast-treated portion 5, are averaged at 0 per 1 cm ² .

The film was formed into a film by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of the fine particles was eight. In addition, the number of sudden generations of microparticles was three.

(Sixth comparative example)

Next, a sixth comparative example of the method of manufacturing the support plate 1 will be described.

In the sixth comparative example, the average diameter of the area circle diameter of the blasting sandblasting material was set to 200 μm to 400 μm, and the gas pressure of the blasting apparatus was set to 4.4 kg/cm ² .

Further, in the sixth comparative example, in the ultrasonic cleaning after the blasting treatment (step 3) and the ultrasonic cleaning after the etching treatment (step 5), the frequency of the ultrasonic wave was set to 30 kHz.

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the conditions of the blasting treatment unit 5 is 2.8 μm, and the blasting material having an area circle diameter of 10 μm or more, which is left in the blasting treatment unit 5, has an average of 10 per 1 cm ² .

The film was formed into a film by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of the fine particles was seven. In addition, the number of sudden generations of microparticles was three.

(Seventh comparative example)

Next, a seventh comparative example of the method of manufacturing the support plate 1 will be described.

In the seventh comparative example, the average diameter of the area circle diameter of the blasting sandblasting material is set to 200 μm to 400 μm, ultrasonic cleaning after blasting (step 3), and ultrasonic treatment after etching treatment. In the washing (step 5), the frequency of the ultrasonic wave is set to 30 kHz. Further, the blasting treatment unit 5 is spray-washed with a cleaning liquid instead of the etching treatment (step 4). At this time, the delivery pressure of the washing liquid was set to 250 kgf/cm ² and the amount of water was 20 l/min.

The surface roughness (Ra) of the blast-treated portion 5 of the support plate 1 produced under the conditions of the blasting treatment unit 5 is 2.7 μm, and the blasting material having a circular diameter of 10 μm or more, which is left in the blasting treatment unit 5, has an average of 12 per 1 cm ² .

The film was formed into a film by the sputtering apparatus 100, and as a result of measuring the fine particles mixed in the film, the average number of the fine particles was seven. In addition, the number of sudden generations of microparticles was three.

1‧‧‧ support plate

1a‧‧‧ surface of the support plate

1b‧‧‧ side surface of the support plate

1c‧‧‧back of the support plate

2‧‧‧Splating target

2a‧‧‧Stained target surface

2b‧‧‧Surface side of the splash target

2c‧‧‧Back of the splash target

3‧‧‧ Formation area

4‧‧‧Affected areas outside the region

5‧‧‧Blasting Department

8‧‧‧ gap

10‧‧‧ Sputtered cathode

20‧‧‧vacuum tank

22‧‧‧ pedestal

23‧‧‧Vacuum exhaust pipe

24‧‧‧ gas introduction tube

25‧‧‧Insulation

26‧‧‧ Shielding Department

27‧‧‧矽 wafer (processed substrate)

28‧‧‧vacuum pump

30‧‧‧ Magnetic Field Formation Department

31‧‧‧ Magnet Support Department

32a‧‧‧1st magnet

32b‧‧‧2nd magnet

50‧‧‧cleaning device

52‧‧‧cleaning trough

53‧‧‧ pump

54‧‧‧Pipe

55‧‧‧washing liquid

100‧‧‧ Sputtering device

Fig. 1 is a schematic view showing a sputtering apparatus according to an embodiment of the present invention.

Fig. 2 is an enlarged view showing the vicinity of a sputtering cathode and a shield portion of the sputtering apparatus.

Figure 3 is an exploded perspective view of a sputtered cathode.

Fig. 4 is a flow chart showing a method of manufacturing a support plate according to an embodiment of the present invention.

Fig. 5 is a schematic view showing an example of a washing device.

Claims (11)

A method for manufacturing a support plate, which is a method for manufacturing a support plate for holding a sputtering target, the method comprising the steps of: preparing a support plate body; forming the region of the support plate body belonging to the sputtering target At least a part of the area other than the area is sandblasted to form a sandblasting treatment unit; the sandblasting unit is ultrasonically cleaned; the sandblasted portion washed by the ultrasonic wave is etched or sprayed with a washing liquid; Ultrasonic cleaning is performed on the sandblasting treatment unit. The method for producing a support sheet according to the first aspect of the invention, wherein the step of forming the sandblasting unit is such that the sandblasting unit is roughened to have a surface roughness (Ra) of 1 μm or more and 4 μm or less. The method for producing a support plate according to the second aspect of the invention, wherein the ultrasonic cleaning step is ultrasonically washing the sandblasting portion by a jet of a cleaning liquid to which an ultrasonic wave of 18 kHz or more and 19 kHz or less is applied. net. The method for producing a support plate according to the third aspect of the invention, wherein the pressure of the jet flow is set to 200 kPa or more and 300 kPa or less. A support plate for holding a support plate of a sputtering target, the support plate having: a support plate body; and a sandblasting treatment portion formed by a region of the support plate body belonging to a region where the sputtering target is formed At least a part of the sandblasting treatment is performed, and the surface roughness (Ra) is 1 μm or more and 4 μm or less, and 4 or less of the above-mentioned blasting materials having a circular diameter of 10 μm or more per 1 cm ² are used for the blasting treatment. The average diameter circle diameter of the particle diameter of the blast material is from 100 μm to 500 μm. The support plate of claim 5, wherein the support plate system is made of aluminum, copper, titanium, stainless steel or an alloy containing one of the materials as a main component. A sputtering cathode comprising: a sputtering target; a support plate body for holding the sputtering target; and a blasting treatment portion for at least a formation region of the support plate body belonging to a region where the sputtering target is formed a part of the blasting material is formed by sand blasting, having a surface roughness (Ra) of 1 μm or more and 4 μm or less, and having a diameter of 10 μm or more per 1 cm ² of the same diameter; and the blasting material used in the blasting treatment. The average area circle diameter of the particle diameter is from 100 μm to 500 μm. A sputtering apparatus comprising: a vacuum chamber; and a sputtering cathode, wherein a sputtering voltage is scattered in the vacuum chamber by applying a voltage, and: a sputtering target; and a support plate body for holding the sputtering target And the blasting treatment portion is formed by sandblasting at least a part of the support plate main body other than the formation region of the region where the sputtering target is formed, and has a surface roughness (Ra) of 1 μm or more and 4 μm or less and per 1 cm ^{2 .} There are four or less blasting materials having an area of a diameter of 10 μm or more; the average diameter of the area of the blasting materials used in the blasting treatment is 100 μm to 500 μm. A cleaning method for a support plate, comprising: ultrasonically washing a sandblasting portion formed by sandblasting a support plate; and etching or washing the sandblasted portion washed by the ultrasonic wave The cleaned liquid was spray washed; the blasting treatment portion was ultrasonically washed again. The method of cleaning a support plate according to the ninth aspect of the invention, wherein the ultrasonic cleaning step is to ultrasonically apply the jet blasting portion to a jet of a cleaning liquid having an ultrasonic wave of 18 kHz or more and 19 kHz or less. Wash. The cleaning method of the support plate according to claim 9, wherein the pressure of the jet flow is set to 200 kPa or more and 300 kPa or less.