201202456 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於濺鍍裝置。 【先前技術】 當在基板上形成薄膜的情況時，由於成膜 之優點，係多所利用有磁控管濺鍍方式。在磁 式中，係在靶材之後方設置由交互地將極性作 數之磁石所構成的磁石構件，並經由此磁石構 之前方形成磁通量，而捕捉電子，並藉由此來 的電子密度提高，而將此些之電子和被導入至 氣體間之碰撞機率提高，以進行濺鍍。 另外，近年來，隨著基板之增大，磁控管 係大型化。因此，係週知有藉由將複數之靶材 而能夠對於大面積之基板進行成膜的濺鍍裝置 考專利文獻1 )。 [先前技術文獻] [專利文獻] [專利文獻1]日本特開2008-25031號公報（ 【發明內容】 [發明所欲解決之課題] 速度爲快等 控管濺鍍方 了改變的複 件來在靶材 將靶材前方 真空腔內的 源鍍裝置亦 作並排設置 (例如，參 參考圖2等 -5- 201202456 然而，在專利文獻1所記載之濺鍍裝置中，在濺鍍時 所從靶材擊出的濺鍍粒子，會有並不附著在基板上而附著 在靶材之未被侵蝕的區域（亦即是所謂的非侵蝕區域）處 的情況。此附著了的濺鍍粒子，係容易由於電弧放電等而 從靶材剝離。而，若是此剝離了的濺鍍粒子附著在基板上 ，則由於其之密著性爲低，因此，在此部分處係容易產生 膜之剝落，而有著使成膜特性降低的問題。 因此，本發明之課題，係在於對於上述先前技術之問 題點作解決，並提供一種：抑制濺鍍粒子之對於非侵蝕區 域的附著，而成膜特性爲高之濺鍍裝置。 [用以解決課題之手段] 本發明之濺鍍裝置，係具備有真空腔、和對於被設置 在與設置於此真空腔內的基板相對向之位置處的靶材施加 電壓之電源、和將氣體導入至前述真空腔內之氣體導入手 段，該濺鍍裝置，其特徵爲：在前述靶材之端部處，係具 備有將該端部之上面作覆蓋的遮蔽構件。本發明之濺鍍裝 置，係藉由具備有遮蔽構件，而能夠將被形成在靶材之端 部的非侵蝕區域作覆蓋，而能夠對於濺鍍粒子之附著在非 侵蝕區域上的情況作抑制。 於此，較理想，前述靶材，係空出有特定之間隔地而 被作複數並排設置，前述遮蔽構件，係將相鄰接之前述靶 材的相互對向之端部的上面作覆蓋。藉由具備有將相鄰接 之靶材的相互對向之端部的上面作覆蓋之遮蔽構件，而能 -6 - 201202456 夠將被形成在靶材之端部的非侵蝕區域之大部分作覆蓋， 而能夠對於濺鍍粒子之附著在非侵蝕區域上的情況作抑制 〇 又，較理想，在相鄰接之前述靶材之被遮蔽構件所覆 蓋的區域處，係被設置有錐狀部。藉由設置有錐狀部，在 靶材上係難以形成非侵蝕區域，並且，就算是例如形成了 非侵蝕區域，亦由於被形成有錐狀部，因此，相較於並未 形成錐狀部的情況，濺鍍粒子係難以附著。又，由於係被 形成有錐狀部，因此，靶材和遮蔽構件係難以被作電性連 接。 又，較理想，係以將前述靶材之並排設置方向的兩端 之靶材的端部之上面作覆蓋的方式，而更進而設置有遮蔽 構件。藉由更進而將此部分作覆蓋，係能夠更加對於非侵 鈾區域作覆蓋，而能夠更加抑制濺鍍粒子之對於非侵蝕區 域的附著。 [發明之效果] 若依據本發明之濺鍍裝置，則係可得到下述之優良效 果：亦即是’係能夠抑制濺鍍粒子之對於非侵蝕區域的附 著，藉由此，係能夠使成膜特性提升。 【實施方式】 (實施形態1 ) 以下’針對本發明之濺鍍裝置作說明。 201202456 濺鍍裝置1，係具備有真空腔11。基板S，係被搬送至 濺鍍裝置1中，基板S，係在真空腔11之頂面側，藉由未圖 示之基板保持部而以將成膜面朝向地面側的狀態來作保持 〇 在真空腔11之側壁面處，係被設置有氣體導入手段12 。氣體導入手段12，係透過被中介設置有質量流控制器 121a、121b之氣體導入管122，而分別被與氣體源123a、 123b作連接。在氣體源123a、123b中，係被封入有氬等之 濺鍍氣體、或者是H20、〇2、N2等之反應氣體，此些之氣 體，係能夠經由質量流控制器1 2 1 a、1 2 1 b而以一定之流量 來導入至真空腔11中。 在與被設置於真空腔Π內之基板S相對向的位置處， 係被配置有靶材組裝體13。靶材組裝體13，係具備有俯視 時而成略長方形之4個的背板131a〜131d、和被設置在各 背板131 a〜131 d之其中一面上的被形成爲俯視時成略長方 形之靶材132a〜132d。 背板131a〜131d，係被製作爲較靶材132a〜132d而更 些許大。此種背板1 3 1 a〜1 3 1 d，係身爲用以將靶材1 3 2 a〜 1 3 2 d作支持者，並且亦可作爲電極板來起作用，以能夠對 於相鄰接之背板間施加電壓的方式，來對於相鄰接之2個 的背板處而設置有配置在真空腔11外部之1個的交流電源 。亦即是，在本實施形態中，在背板13 la和背板131b處， 係被連接有交流電源133a，在背板131c和背板131d處，係 被連接有交流電源133b。又，在背板131a〜131d之內部， 201202456 係被設置有未圖示之液體循環路徑，並構成爲能夠將靶材 132a〜132d冷卻。 靶材132a〜132d，係因應於ITO、A1合金、Mo等之欲 在基板上成膜的膜之組成，而藉由週知之方法來分別製作 之。靶材132a〜132d，係以位置在與基板S相平行之同一 平面上的方式，而空出有間隔地被作並排設置。 在靶材組裝體1 3之下側，係被設置有4個的磁石構件 1 4。磁石構件1 4，係分別被形成爲相同之構造。磁石構件 14，係具備有支持部141，在支持部141上，係以交互將極 性改變地來作配置的方式，而被設置有沿著靶材132a〜 132d之長邊方向的棒狀之中央磁石142、和以包圍中央磁 石142之週邊的方式而由複數之磁石所構成的週邊磁石143 。藉由此，在靶材132a〜132d之前方，係被形成有相互平 衡之閉迴圈的隧道狀磁通量，並對於在靶材132a〜13 2d之 前方所電離了的電子以及藉由濺鍍所產生了的2次電子作 捕捉，而能夠將在作爲陰極之靶材的前方所形成之電漿的 密度提高。另外，磁石構件14，係能夠在靶材132a〜132d 之寬幅方向上而移動，並以能夠盡可能地減少後述之非侵 蝕區域之形成的方式而構成之。 在如此這般所構成之真空腔Π內，若是藉由氣體導入 手段12而將濺鍍氣體導入，並藉由各交流電源133a、133b 來對於各背板131a〜131d施加電壓，則在靶材132a〜132d 和基板S之間的空間中，係形成有電漿。而，藉由此電漿 之形成，靶材132a〜132d係被濺鍍，濺鍍粒子係附著在基 201202456 板S上’並在基板S上形成所期望之膜。於此情況，依存於 電漿之形成位置，靶材表面，係如圖3中所示一般，被分 成侵蝕區域A1和身爲並未被侵蝕之區域的所謂非侵蝕區域 A2。亦即是，在靶材132a〜132d之端部近旁，由於電漿係 難以被形成，因此，靶材132a〜132d係並不會被侵蝕，而 作爲非侵蝕區域A2來殘留，在身爲其他區域之侵蝕區域 A 1處，則係進行有由濺鍍所導致之侵蝕。 另外，在先前技術之濺鍍裝置中，係存在有下述一般 的問題。亦即是，在濺鍍中，濺鍍粒子係附著在基板上並 形成膜，但是，依存於濺鍍粒子之飛出方向，亦會有附著 在非侵蝕區域處者。以下，將此種在濺鎪時而並未直接附 著在基板上的粒子，稱作非附著粒子。於此情況，此附著 在非侵蝕區域處之非附著粒子，由於其與非侵蝕區域之間 的密著性係爲弱，因此，係容易經由電弧放電等而從非侵 蝕區域剝落，並成爲塵埃而在真空腔11內浮游。而，此成 爲了塵埃之非附著粒子，係會有附著在基板S上的情況。 如此這般，若是非附著粒子進入至所形成之膜的一部份中 ，則此部分和構成其他膜的部分之密著性係爲低，成膜後 之膜係容易剝落。起因於此，成膜特性係會劣化。亦即是 ，在先前技術之濺鍍裝置中，係有著由於從非侵蝕區域而 來之非附著粒子作爲異物而進入至膜中一事而導致成膜特 性惡化的問題，因此係有必要對此作抑制。 因此，在本實施形態中，係爲了抑制非附著粒子之對 於靶材132a〜132d的非侵蝕區域A2之附著，而在各靶材 -10- 201202456 13 2a〜132d之間，分別設置有遮蔽構件20。以下，針對遮 蔽構件2 0作詳細說明。另外，係藉由耙材組裝體1 3和遮蔽 構件20，而構成靶材單元。 3個的遮蔽構件2 0，係成爲相同構造，並分別爲俯視 時成略長方形狀。遮蔽構件20，係由被配置在靶材132a〜 132d之間的遮蔽本體21、和從遮蔽本體21而以覆蓋靶材 132a〜132d之寬幅方向的端部之上面的方式而作了延伸設 置的板狀之凸緣部22所成。遮蔽構件20之凸緣部22，係以 將當並未設置有遮蔽構件20的情況時所被形成在靶材132a 〜132d處的非侵蝕區域在靶材132a〜132d之寬幅方向上而 剛好作覆蓋的方式，而作設置。亦即是，凸緣部22，係以 至少將當並未設置有遮蔽構件20的情況時所被形成在靶材 132a〜132d處的成爲基準之基準非侵蝕區域中的被形成在 靶材132a〜132d之寬幅方向上的基準非侵蝕區域作覆蓋的 方式’而以在寬幅方向上成爲與基準非侵蝕區域之寬幅相 同的方式來形成之。另外，關於此基準非侵蝕區域，係可 預先藉由實驗等來得知其會成爲何種程度之大小的區域。 又’以在電壓施加時而不會發生短路的方式，來使遮蔽構 件20和靶材132a〜132d以及背板131a〜131d相互分離。 遮蔽構件20，係爲容易使附著粒子附著的材料，並且 係由高融點材料所成。作爲此種遮蔽構件20之材料，例如 ’係可列舉出鈦、鋁、S U S、陶瓷等，在本實施形態中， 係爲由鈦所成。 又’遮蔽構件20之表面，係被作噴砂處理（加工）， -11 - 201202456 雖並未圖示，但是係被形成有細微之凹凸（表面粗度爲 100#1!1〜150/2111)。藉由進行噴砂處理，非附著粒子和 遮蔽構件20之間的密著性係提升，藉由此，而對於附著在 遮蔽構件42上之粒子再度剝落並且被放出至真空腔11內的 情況作抑制。 藉由具備有此種遮蔽構件20，由於係能夠將較基準非 侵蝕區域而更狹窄的靶材132a〜132d端部之非侵蝕區域A2 藉由凸緣部22來作覆蓋，因此，係能夠對於非附著粒子附 著在非侵蝕區域A2處的情況作抑制。亦即是，藉由設置遮 蔽構件20，由於相較於基準非侵蝕區域，非侵蝕區域A2係 變得更狹窄，因此，能夠使非附著粒子並不附著在非侵蝕 區域A2上而是附著在遮蔽構件2 0上。藉由此，能夠對於非 附著粒子附著在非侵蝕區域A2處的情況作抑制。於此情況 ，附著在遮蔽構件20上之非附著粒子，相較於附著在非侵 蝕區域A2處的情況，係更難以從遮蔽構件20剝落，而不會 有作爲塵埃而再度在真空腔11內漂浮的情況。又，藉由設 置遮蔽構件20，由於相較於基準非侵蝕區域，非侵蝕區域 A2係變得更狹窄，因此，能夠使附著在非侵蝕區域A2上 之非附著粒子數減少。亦即是，非附著粒子係成爲難以附 著在非侵蝕區域上。故而，能夠對於在成膜後的膜中而包 含有此種非附著粒子的情況作抑制，而能夠抑制膜之剝落 〇 亦即是，在本實施形態中，係使從靶材132a〜13 2d所 被濺鍍並飛出至真空腔Π內但是卻無法附著在基板上之非 -12- 201202456 附著粒子，附著在遮蔽構件20處，並使其密著在遮蔽構件 20上，藉由此，而對於非附著粒子附著在非侵蝕區域A2處 的情況作抑制，並藉由此來將濺鍍裝置1之成膜特性提升 〇 又，藉由將此種遮蔽構件20設置在靶材132a〜132d之 間，亦能夠同時防止非附著粒子涵蓋靶材132a〜132d之間 地而附著並在靶材132a〜132d之間引起短路。另外，例如 ，若是以僅在靶材132a〜132d之間而作埋設的方式來設置 遮蔽構件，則係無法如同上述一般地來對於非附著粒子附 著在非侵蝕區域A2處的情況作抑制，而無法成爲對於膜之 剝落作了抑制的成膜特性爲佳之濺鍍裝置。並且，在本實 施形態中，由於係將靶材132a〜132d之寬幅方向的端部作 覆蓋，因此，相較於以僅埋設在靶材132a〜132d之間的方 式來設置遮蔽構件的情況，由於表面積係爲大，因此，係 能夠使更多的非附著粒子作附著，而能夠更加抑制非附著 粒子之對於基板S的再附著。 此種遮蔽構件20之凸緣部22，係如同上述一般，以能 夠將靶材132a〜132d之端部的非侵蝕區域A2作覆蓋的方式 而被形成，並設爲分別將靶材132a〜13 2d之寬幅方向的各 端部作3〜7 m m之覆蓋。此係因爲，若是較3 m m更小，則係 無法將靶材132a〜132d之非侵蝕區域A2作覆蓋，另一方面 ，若是較7mm更大，則會成爲較靶材132a〜13 2d之基準非 侵蝕區域更大，而一直覆蓋至靶材132a〜132d之侵蝕區域 ，不但會使靶材132a〜13M之使用效率降低，且會無法得 -13- 201202456 到所期望之成膜特性之故。另外，在本實施形態中，遮蔽 構件20之凸緣部22，係以成爲與靶材132a〜132d之基準非 侵蝕區域之寬幅略相同的方式，而將靶材132a〜132d之寬 幅方向的各端部作約5mm之覆蓋9 又，凸緣部22和靶材132a〜132d之間的間隔，係只要 讓使用前之靶材132a〜132d的最上面和凸緣部22的下面之 間的間隔成爲2〜15mm左右即可。若是未滿2mm，則距離 係過近，若是非附著粒子作堆積，則會有凸緣部22和靶材 132a〜132d相互連接並造成短路的可能性。另一方面，若 是超過15 mm，則凸緣部22的下面和靶材132a〜132d之間 的距離係會過大，非附著粒子係不會附著在遮蔽構件20上 ，而會附著於靶材132a〜132d之非侵蝕區域A2處。在本實 施形態中，係爲1 〇 m m。 又，爲了保持此遮蔽構件20，係在背板131a〜131d之 後方設置有支持構件23。支持構件23，係具備有板狀部 231、和在板狀部231之寬幅方向的中央部處而以被配置在 背板131a〜131d之間的方式所延伸設置的突起部232。突 起部23 2和凸緣部22，係藉由與凸緣部22之寬幅方向中央 部相分離地而設置了的締結構件23 3來作固定。此支持構 件23，係被作接地並成爲接地電位。藉由此，遮蔽構件20 係分別成爲接地電位，而不會有由於設置遮蔽構件20而導 致靶材間產生短路的情況。 以下，針對本發明之其他實施形態作說明。 -14- 201202456 (實施形態2 ) 使用圖4，對於實施形態2之濺鍍裝置作說明。在實施 形態2中，除了使用有與圖1〜3中所示之實施形態1的靶材 132a〜132d而剖面形狀成爲相異的靶材一點以外，由於係 與實施形態1中所示之濺鍍裝置相同’故省略其說明。 在本實施形態之濺鍍裝置中的靶材41a以及4lb’係於 其之寬幅方向的端部處設置有錐狀部。藉由如此這般地使 靶材41a以及41b之寬幅方向的端部傾斜，而將遮蔽構件20 之與凸緣部22的下面之間的距離設爲較實施形態1之濺鍍 裝置1更大。另外，於此，係爲了說明，而僅對於靶材41a 以及41b之近旁作展示。 藉由如此這般地在靶材41a以及41b之端部處設置錐狀 部，相較於在靶材41 a以及41b之端部處而並未設置有錐狀 部的情況（亦即是實施形態1之靶材132a〜132d的情況） ，非附著粒子係難以附著在非侵蝕區域A2 (參考圖3 )上 。此係因爲，藉由使非附著粒子容易附著之端部成爲錐狀 面，由於電漿亦會繞入至凸緣部22之下面側，因此，係能 夠將非侵蝕區域A2形成爲較實施形態1而更狹窄，藉由此 ，係能夠使附著在非侵蝕區域A2處之非附著粒子數更爲減 少。亦即是，藉由設爲此種構成，非附著粒子係成爲難以 附著在非侵蝕區域A2上。又，由於在濺鍍裝置2中之靶材 41 a以及4 lb和遮蔽構件20之凸緣部22之間的距離係變廣， 因此，係能夠對於非附著粒子形成膜並將靶材4 1 a以及4 1 b 和遮蔽構件20之凸緣部22作電性連接而造成短路的情況作 -15- 201202456 抑制。另外，若是想要爲了防止短路而將靶材4 1 a以及4 1 b 和遮蔽構件20之凸緣部22之間的距離增大，而將遮蔽構件 20之高度設爲更高，則會無法對於非附著粒子附著在非侵 蝕區域A2處的情況作抑制。故而，係以如同本實施形態一 般而在靶材41 a以及41b之寬幅方向的兩端部處設置有錐狀 面爲理想。 又，藉由在靶材41 a以及41b之端部設置錐狀部，由於 靶材41 a以及41b和凸緣部22之間的距離係爲廣，因此，電 漿亦係容易繞入至凸緣部22之下面側，而能夠安定地持續 形成電漿。並且，由於電漿亦係容易繞入至凸緣部22之下 面側’因此，相較於濺鍍裝置1，係以本實施形態之濺鍍 裝置的情況下而更難以形成非侵蝕區域A2，而能夠對於靶 材41 a以及41b有效率地作利用，並且，由於非侵蝕區域A2 係爲少’因此係能夠更爲抑制在此區域處之非附著粒子的 附著》 作爲參考例，係藉由實施形態2之濺鍍裝置而進行了 成膜。作爲成膜條件，係設爲壓力：〇.52Pa、施加電壓： 40V '靶材材料：氧化銦-氧化鋅系透明電極材料、濺鍍氣 體· Ar、〇2之混合氣體、流量：Ar= 950sccm、〇2 = 1 2sccm 〇 作爲比較例，在實施形態1之濺鍍裝置1中，藉由除了 並未設置有凸緣部22(亦即是，僅由遮蔽本體21所成之遮 蔽構件）以外而爲相同之濺鍍裝置，來以相同之成膜條件 而進行了成膜。 -16- 201202456 針對參考例以及比較例之各情況，而藉由外觀檢査器 (ORBOTECH公司製，商品名FPI-6590)來對於附著在成 膜厚之基板上的異物粒子（亦即是非附著粒子）之數量作 了測定，並對於該數量作了比較。將結果展示於圖5中。 如圖5中所示一般’在參考例的情況時，相較於比較例， 異物粒子數係減少，而可以得知，在實施形態2之濺鍍裝 置中，成膜特性係提升。 (實施形態3 ) 使用圖6’對於本實施形態之濺鍍裝置作說明◊在實 施形態3中，除了使用有與實施形態2的遮罩構件而形狀爲 相異之遮罩構件一點以外，由於係與實施形態2中所示之 濺鍍裝置相同，故省略其說明。 在本實施形態中，遮罩構件42，係於其之表面全體處 而設置有凹部。藉由此，係能夠將遮罩構件42之表面積更 進一步地增大，而能夠使更多之非附著粒子作附著。當然 的，此遮罩構件42，亦係被進行有上述之噴砂加工。 若依據上述之各實施形態1〜3的濺鍍裝置，則係能夠 使成膜特性提升。 (其他實施型態） 本發明，係並不被限定於上述之實施形態1〜3。例如 ，在本實施形態中，雖係將靶材之設置枚數設爲4枚，但 是’當然係並不被限定於此。例如，靶材係亦可設爲僅由 •17- 201202456 1枚所成。 遮蔽構件20，只要是能夠將靶材之端部、亦即是將當 並未設置有遮蔽構件20的情況時所被形成在靶材處的非侵 蝕區域的至少一部份作覆蓋即可，例如，亦可僅設置在長 邊方向之端部處。 又，在實施形態2中，雖係在靶材41a、41b之端部處 設置錐狀部而設爲了斜面狀，但是，係並不被限定於此， 亦可在遮罩構件20之下面側而設置錐狀部。就算設爲此種 構成，亦能夠將遮罩構件20和靶材間的距離增廣。又，作 爲遮罩構件20，係只要爲至少能夠將靶材之上面的端部作 覆蓋者即可，例如，亦可爲僅由凸緣部22所成者。 又，在上述之實施形態1〜3中，在兩端之靶材132a以 及靶材132d的靶材132a〜132d之並排設置方向外側處，雖 然係並未設置有遮蔽構件20，但是，在此並排設置方向外 側處，係亦可設置遮蔽構件20。亦即是，在實施形態1中 ，各靶材132a〜132d，係分別全部將寬幅方向之兩端側藉 由遮蔽構件20來作覆蓋。藉由設爲此種構成，由於係能夠 更確實地將非侵蝕區域A2作覆蓋，因此，係能夠將附著在 非侵蝕區域A2處之非附著粒子減少。另外，如同在實施形 態1〜3中所示一般，藉由至少在與基板S相對向之靶材間 設置遮蔽構件2 0，由於係能夠在與基板S相對向之區域處 而將附著在非侵蝕區域A2上之非附著粒子充分地減少，因 此，能夠充分地將在被形成於基板上之膜中而混入非附著 粒子的可能性減少，藉由此，係能夠充分地將成膜特性提 -18- 201202456 升。 [產業上之利用可能性] 本發明之濺鍍裝置，其成膜特性係爲高。故而，係可 在半導體元件製造產業以及太陽電池元件製造產業中作利 用。 【圖式簡單說明】 [圖1]實施形態1之濺鍍裝置的模式性剖面圖。 [圖2]實施形態1之濺鍍裝置中的靶材近旁之模式性剖 面立體圖。 [圖3]對於實施形態1之靶材以及遮蔽構件的一部份作 展示之模式性上面圖。 [圖4]實施形態2之濺鍍裝置中的靶材近旁之模式性剖 面圖。 [圖5]對於參考例以及比較例之測定結果作展示的圖表 〇 [圖6]實施形態3之濺鍍裝置中的靶材近旁之模式性剖 面圖。 【主要元件符號說明】 I :濺鎪裝置 II :真空腔 12 :氣體導入手段 -19- 201202456 1 3 :靶材組裝體 1 4 :磁石構件 2 〇 :遮蔽構件 21 :遮蔽本體 22 :凸緣部 23 :支持構件 4 1 a、4 1 b :靶材 42 :遮蔽構件 1 2 1 a、1 2 1 b :質量流控制器 122 :氣體導入管 1 2 3 a :氣體源 131a〜131d:背板 132a〜132d:靶材 1 3 3 a〜1 3 3 b :交流電源 141 :支持部 142 :中央磁石 143 :週邊磁石 231 :板狀部 23 2 :突起部 2 3 3 :締結構件 A 1 :侵蝕區域 A 2 :非侵蝕區域 5 :基板 -20-201202456 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a sputtering apparatus. [Prior Art] When a film is formed on a substrate, a magnetron sputtering method is often used due to the advantages of film formation. In the magnetic mode, a magnet member composed of magnetically alternating magnets is disposed behind the target, and magnetic flux is formed in front of the magnet structure to capture electrons, thereby increasing the electron density. And the probability of collision between these electrons and the gas introduced into the gas is increased to perform sputtering. Further, in recent years, as the number of substrates has increased, the magnetron has been enlarged. Therefore, a sputtering apparatus capable of forming a film on a large-area substrate by using a plurality of targets is known. Patent Document 1). [Prior Art Document] [Patent Document 1] [Patent Document 1] JP-A-2008-25031 (Summary of the Invention) [Problems to be Solved by the Invention] The speed is fast, and the control panel is sputtered with a modified copy. The source plating apparatus in the vacuum chamber in front of the target is also arranged side by side in the target (for example, refer to FIG. 2 and the like -5 to 201202456. However, in the sputtering apparatus described in Patent Document 1, the sputtering is performed. The sputtered particles that are hit by the target may adhere to the unetched region of the target (that is, the so-called non-erosion region) without adhering to the substrate. The adhered sputter particles, It is easy to peel off from the target by arc discharge, etc. However, if the peeled sputtered particles adhere to the substrate, the adhesion is low, and therefore, peeling of the film is likely to occur in this portion. However, the problem of the film forming property is lowered. Therefore, the object of the present invention is to solve the problems of the prior art described above, and to provide a method for suppressing adhesion of sputtered particles to non-erosion regions, and the film forming property is High splash [Means for Solving the Problem] The sputtering apparatus of the present invention includes a vacuum chamber and a power source for applying a voltage to a target disposed at a position opposite to a substrate provided in the vacuum chamber, And a gas introduction means for introducing a gas into the vacuum chamber, wherein the sputtering apparatus is characterized in that a shielding member for covering the upper surface of the end portion is provided at an end portion of the target material. The sputtering apparatus can cover the non-erosion area formed at the end of the target by providing the shielding member, and can suppress the adhesion of the sputtering particles to the non-erosion area. Preferably, the target materials are arranged side by side at a specific interval, and the shielding member covers the upper surfaces of the adjacent ends of the adjacent targets. The shielding member is provided with a cover for covering the opposite ends of the adjacent targets, and the -6 - 201202456 can cover most of the non-erosion area formed at the end of the target. And can It is preferable to suppress the adhesion of the sputtered particles to the non-erosion area, and it is preferable to provide a tapered portion at a region covered by the shield member adjacent to the target. The tapered portion is provided, and it is difficult to form a non-erosion region on the target, and even if a non-erosion region is formed, for example, a tapered portion is formed, and thus the tapered portion is not formed. The sputtered particles are difficult to adhere to. Further, since the tapered portion is formed, it is difficult for the target and the shielding member to be electrically connected. Further, it is preferable to arrange the targets in parallel. The upper ends of the ends of the target are covered, and the shielding members are further provided. By further covering the portion, the non-invasive uranium region can be covered more, and the sputtering can be further suppressed. The attachment of particles to non-eroded areas. [Effects of the Invention] According to the sputtering apparatus of the present invention, it is possible to obtain an excellent effect of being able to suppress adhesion of sputtered particles to non-erosion areas, thereby enabling Improved film properties. [Embodiment] (Embodiment 1) Hereinafter, a sputtering apparatus according to the present invention will be described. 201202456 The sputtering apparatus 1 is provided with a vacuum chamber 11. The substrate S is transported to the sputtering apparatus 1. The substrate S is placed on the top surface side of the vacuum chamber 11, and is held by the substrate holding portion (not shown) so that the film formation surface faces the ground side. At the side wall surface of the vacuum chamber 11, a gas introduction means 12 is provided. The gas introduction means 12 is connected to the gas sources 123a, 123b through the gas introduction pipes 122 to which the mass flow controllers 121a and 121b are interposed. The gas sources 123a and 123b are sealed with a sputtering gas such as argon or a reaction gas such as H20, 〇2, or N2, and these gases can pass through the mass flow controller 1 2 1 a, 1 2 1 b is introduced into the vacuum chamber 11 at a constant flow rate. The target assembly 13 is disposed at a position opposed to the substrate S provided in the vacuum chamber. The target assembly 13 is provided with four back plates 131a to 131d which are formed in a rectangular shape in a plan view, and are provided on one of the back plates 131 a to 131 d to be formed into a rectangular shape in plan view. Targets 132a to 132d. The back sheets 131a to 131d are made larger than the targets 132a to 132d. The backing plate 1 3 1 a~1 3 1 d is used to support the target 1 3 2 a~1 3 2 d, and can also function as an electrode plate to be able to A voltage is applied between the back plates, and one AC power source disposed outside the vacuum chamber 11 is provided for the two adjacent back plates. That is, in the present embodiment, the AC power supply 133a is connected to the back plate 13 la and the back plate 131b, and the AC power supply 133b is connected to the back plate 131c and the back plate 131d. Further, inside the back sheets 131a to 131d, 201202456 is provided with a liquid circulation path (not shown), and is configured to cool the targets 132a to 132d. The targets 132a to 132d are respectively produced by a known method in accordance with the composition of a film which is to be formed on a substrate such as ITO, Al alloy or Mo. The targets 132a to 132d are arranged side by side so as to be spaced apart from each other on the same plane as the substrate S. On the lower side of the target assembly 1 3, four magnet members 14 are provided. The magnet members 14 are respectively formed in the same configuration. The magnet member 14 is provided with a support portion 141, and the support portion 141 is disposed so as to alternately change the polarity, and is provided with a rod-shaped center along the longitudinal direction of the targets 132a to 132d. The magnet 142 and the peripheral magnet 143 composed of a plurality of magnets so as to surround the periphery of the central magnet 142. Thereby, in front of the targets 132a to 132d, tunnel-shaped magnetic fluxes having mutually closed closed loops are formed, and electrons ionized before the targets 132a to 13 2d and by sputtering are formed. The generated electrons are captured twice, and the density of the plasma formed in front of the target as the cathode can be increased. Further, the magnet member 14 can be moved in the width direction of the targets 132a to 132d, and can be configured to reduce the formation of a non-erodible region to be described later as much as possible. In the vacuum chamber configured as described above, if the sputtering gas is introduced by the gas introduction means 12, and the voltage is applied to each of the back sheets 131a to 131d by the respective AC power sources 133a and 133b, the target is applied. In the space between 132a to 132d and the substrate S, plasma is formed. On the other hand, by the formation of the plasma, the targets 132a to 132d are sputtered, and the sputtered particles adhere to the base 201202456 S and form a desired film on the substrate S. In this case, depending on the position at which the plasma is formed, the surface of the target, as shown in Fig. 3, is divided into an eroded area A1 and a so-called non-erosion area A2 which is an area which is not eroded. That is, in the vicinity of the end portions of the targets 132a to 132d, since the plasma system is difficult to be formed, the targets 132a to 132d are not corroded, but remain as the non-erosion area A2, and are otherwise At the erosion area A 1 of the area, there is erosion caused by sputtering. Further, in the prior art sputtering apparatus, there are the following general problems. That is, in the sputtering, the sputtered particles adhere to the substrate to form a film, but depending on the direction in which the sputtered particles fly out, there is a possibility of adhering to the non-erosion area. Hereinafter, such particles which are not directly attached to the substrate at the time of sputtering are referred to as non-adhering particles. In this case, since the non-adhering particles adhering to the non-erosion area are weak in adhesion to the non-erosion area, they are easily peeled off from the non-erosion area by arc discharge or the like, and become dust. It floats in the vacuum chamber 11. On the other hand, the non-adhering particles which become dust adhere to the substrate S. As described above, if the non-adhering particles enter a part of the formed film, the adhesion between the portion and the portion constituting the other film is low, and the film after the film formation is easily peeled off. Because of this, the film forming properties are deteriorated. In other words, in the sputtering apparatus of the prior art, there is a problem that the non-adhering particles from the non-erosion area enter the film as foreign matter, and the film formation property is deteriorated, so it is necessary to inhibition. Therefore, in the present embodiment, in order to suppress the adhesion of the non-adhered particles to the non-erosion regions A2 of the targets 132a to 132d, a shielding member is provided between each of the targets -10- 201202456 13 2a to 132d. 20. Hereinafter, the shielding member 20 will be described in detail. Further, the target unit is constituted by the coffin assembly 13 and the shielding member 20. The three shielding members 20 have the same structure and are slightly rectangular in plan view. The shielding member 20 is extended by the shielding body 21 disposed between the targets 132a to 132d and the upper surface of the shielding body 21 covering the width direction of the targets 132a to 132d. The plate-like flange portion 22 is formed. The flange portion 22 of the shielding member 20 is in the width direction of the targets 132a to 132d in the non-erosion region formed at the targets 132a to 132d when the shielding member 20 is not provided. The way to cover, and set it up. That is, the flange portion 22 is formed in the target 132a in at least the reference non-erosion region which is formed at the targets 132a to 132d when the shielding member 20 is not provided. The reference non-erosion area in the width direction of the 133d is covered as 'the way' and is formed in the same manner as the width of the reference non-erosion area in the wide direction. Further, regarding this reference non-erosion area, it is possible to know in advance by an experiment or the like what extent it will be. Further, the shielding member 20 and the targets 132a to 132d and the back plates 131a to 131d are separated from each other so that the short circuit does not occur when the voltage is applied. The shielding member 20 is a material that easily adheres to adhering particles and is made of a high melting point material. Examples of the material of the shielding member 20 include titanium, aluminum, S U S, and ceramics. In the present embodiment, titanium is used. Further, the surface of the shielding member 20 is sandblasted (processed), and -11 - 201202456 is not shown, but is formed with fine irregularities (surface roughness is 100#1!1 to 150/2111). . By performing the blasting treatment, the adhesion between the non-adhering particles and the shielding member 20 is increased, whereby the particles adhering to the shielding member 42 are peeled off again and released into the vacuum chamber 11 . By providing such a shielding member 20, since the non-erosion area A2 at the end of the targets 132a to 132d which are narrower than the reference non-erosion area can be covered by the flange portion 22, it is possible to The case where the non-adhering particles adhere to the non-erosion area A2 is suppressed. In other words, by providing the shielding member 20, the non-erosion area A2 becomes narrower than the reference non-erosion area, and therefore, the non-adhering particles can be attached to the non-erosion area A2 instead of being attached thereto. The shielding member 20 is on. Thereby, it is possible to suppress the case where the non-adhering particles adhere to the non-erosion area A2. In this case, the non-adhering particles adhering to the shielding member 20 are more difficult to peel off from the shielding member 20 than in the non-erosting region A2, and are not again present as dust in the vacuum chamber 11. Floating situation. Further, by providing the shielding member 20, the non-erosion area A2 is made narrower than the reference non-erosion area, so that the number of non-adhering particles adhering to the non-erosion area A2 can be reduced. That is, the non-adherent particles become difficult to adhere to the non-erosion area. Therefore, it is possible to suppress the occurrence of such non-adhering particles in the film after film formation, and it is possible to suppress the peeling of the film, that is, in the present embodiment, the target materials 132a to 13d are prevented. The non--12-201202456 attached particles that are sputtered and fly out into the vacuum chamber but are not attached to the substrate are attached to the shielding member 20 and are adhered to the shielding member 20, whereby Further, the case where the non-adhering particles adhere to the non-erosion area A2 is suppressed, and thereby the film forming property of the sputtering apparatus 1 is improved, and the shielding member 20 is disposed on the targets 132a to 132d. It is also possible to simultaneously prevent the non-adherent particles from adhering between the targets 132a to 132d and causing a short circuit between the targets 132a to 132d. Further, for example, if the shielding member is provided so as to be embedded only between the targets 132a to 132d, it is not possible to suppress the adhesion of the non-adhering particles to the non-erosion area A2 as described above. It is not a sputtering apparatus which is excellent in film forming property for suppressing peeling of a film. Further, in the present embodiment, since the ends of the targets 132a to 132d in the wide direction are covered, the shielding member is provided in such a manner as to be embedded only between the targets 132a to 132d. Since the surface area is large, more non-adhering particles can be attached, and re-adhesion of the non-adhered particles to the substrate S can be further suppressed. The flange portion 22 of the shielding member 20 is formed so as to cover the non-erosion region A2 of the end portions of the targets 132a to 132d as described above, and the targets 132a to 13 are respectively formed. The ends of the 2d wide direction are covered by 3 to 7 mm. This is because if it is smaller than 3 mm, the non-erosion area A2 of the targets 132a to 132d cannot be covered. On the other hand, if it is larger than 7 mm, it becomes the reference of the targets 132a to 13d. The non-eroded area is larger, and the erosion area that covers the targets 132a to 132d all the time, not only reduces the use efficiency of the targets 132a to 13M, but also fails to obtain the desired film formation characteristics from -13 to 201202456. Further, in the present embodiment, the flange portion 22 of the shielding member 20 has a width direction which is slightly the same as the width of the reference non-erosion region of the targets 132a to 132d, and the width direction of the targets 132a to 132d. Each end portion is covered by about 5 mm. Further, the interval between the flange portion 22 and the targets 132a to 132d is such that the uppermost surface of the targets 132a to 132d before use and the lower surface of the flange portion 22 are used. The interval can be about 2 to 15 mm. If the thickness is less than 2 mm, the distance is too close. If the non-adhering particles are deposited, the flange portion 22 and the targets 132a to 132d may be connected to each other to cause a short circuit. On the other hand, if it exceeds 15 mm, the distance between the lower surface of the flange portion 22 and the targets 132a to 132d will be excessively large, and the non-adhering particles will not adhere to the shielding member 20 but will adhere to the target 132a. ~132d non-eroded area A2. In the present embodiment, it is 1 〇 m m. Further, in order to hold the shielding member 20, a support member 23 is provided behind the back plates 131a to 131d. The support member 23 is provided with a plate portion 231 and a projection portion 232 extending so as to be disposed between the back plates 131a to 131d at a central portion in the width direction of the plate portion 231. The projecting portion 23 2 and the flange portion 22 are fixed by a joint member 23 3 provided to be separated from the center portion in the wide direction of the flange portion 22. This support member 23 is grounded and becomes a ground potential. Thereby, the shielding members 20 are respectively grounded, and there is no possibility that a short circuit occurs between the targets due to the provision of the shielding member 20. Hereinafter, other embodiments of the present invention will be described. -14-201202456 (Embodiment 2) A sputtering apparatus according to Embodiment 2 will be described with reference to Fig. 4 . In the second embodiment, the target material 132a to 132d of the first embodiment shown in Figs. 1 to 3 is used, and the cross-sectional shape is different from the target material, and the sputtering is as shown in the first embodiment. The plating apparatus is the same, and the description thereof is omitted. In the sputtering apparatus of the present embodiment, the targets 41a and 4lb' are provided with tapered portions at the ends thereof in the width direction. By tilting the ends of the targets 41a and 41b in the width direction as described above, the distance between the shielding member 20 and the lower surface of the flange portion 22 is set to be larger than that of the sputtering apparatus 1 of the first embodiment. Big. In addition, here, for the sake of explanation, only the vicinity of the targets 41a and 41b is shown. By providing the tapered portions at the ends of the targets 41a and 41b in this manner, the tapered portions are not provided at the ends of the targets 41a and 41b (that is, the implementation is performed) In the case of the targets 132a to 132d of the first form, it is difficult for the non-adhering particles to adhere to the non-erosion area A2 (refer to FIG. 3). In this case, since the end portion where the non-adhering particles are easily adhered becomes a tapered surface, the plasma is also wound around the lower surface side of the flange portion 22, so that the non-erosion region A2 can be formed into a more embodiment. 1 is more narrow, whereby the number of non-adhering particles adhering to the non-erosion area A2 can be further reduced. In other words, with such a configuration, the non-adhering particles are less likely to adhere to the non-erosion area A2. Further, since the distance between the targets 41 a and 4 lb in the sputtering apparatus 2 and the flange portion 22 of the shielding member 20 is widened, it is possible to form a film for the non-adhering particles and to target the target 4 1 The case where a and 4 1 b are electrically connected to the flange portion 22 of the shield member 20 to cause a short circuit is suppressed by -15-201202456. Further, if it is desired to increase the distance between the targets 4 1 a and 4 1 b and the flange portion 22 of the shielding member 20 in order to prevent a short circuit, the height of the shielding member 20 can be made higher. The case where the non-adhering particles adhere to the non-erosion area A2 is suppressed. Therefore, it is preferable to provide a tapered surface at both end portions in the width direction of the targets 41a and 41b as in the present embodiment. Further, by providing the tapered portions at the ends of the targets 41a and 41b, since the distance between the targets 41a and 41b and the flange portion 22 is wide, the plasma is also easily entangled to the convex portion. The lower side of the edge portion 22 is capable of stably forming plasma continuously. Further, since the plasma is also easily wound around the lower surface side of the flange portion 22, it is more difficult to form the non-erosion area A2 than the sputtering apparatus 1 in the case of the sputtering apparatus of the present embodiment. Further, the targets 41a and 41b can be used efficiently, and since the non-erosion area A2 is small, "the adhesion of non-adherent particles at this area can be more suppressed" as a reference example. Film formation was carried out by the sputtering apparatus of the second embodiment. The film formation conditions were as follows: pressure: 52.52 Pa, applied voltage: 40 V 'target material: indium oxide-zinc oxide-based transparent electrode material, sputtering gas, mixed gas of Ar, 〇2, flow rate: Ar = 950 sccm 〇 2 = 1 2 sccm 〇 As a comparative example, in the sputtering apparatus 1 of the first embodiment, the flange portion 22 is not provided (that is, the shielding member formed only by the shielding body 21) In the same sputtering apparatus, the film formation was carried out under the same film formation conditions. -16-201202456 For the case of the reference example and the comparative example, foreign matter particles (that is, non-adherent particles) adhering to the substrate having a film thickness are formed by an appearance checker (trade name: FPI-6590, manufactured by ORBOTECH Co., Ltd.). The quantity was measured and compared for this quantity. The results are shown in Figure 5. As shown in Fig. 5, in general, in the case of the reference example, the number of foreign matter particles was reduced as compared with the comparative example, and it was found that in the sputtering apparatus of the second embodiment, the film formation characteristics were improved. (Embodiment 3) A sputtering apparatus according to the present embodiment will be described with reference to Fig. 6'. In the third embodiment, a mask member having a shape different from that of the mask member of the second embodiment is used, Since it is the same as the sputtering apparatus shown in Embodiment 2, description is abbreviate|omitted. In the present embodiment, the mask member 42 is provided with a concave portion on the entire surface thereof. Thereby, the surface area of the mask member 42 can be further increased, and more non-adhering particles can be attached. Of course, the mask member 42 is also subjected to the above-described sandblasting process. According to the sputtering apparatus of each of Embodiments 1 to 3 described above, the film formation characteristics can be improved. (Other Embodiments) The present invention is not limited to the above-described Embodiments 1 to 3. For example, in the present embodiment, the number of the targets to be placed is four, but it is of course not limited thereto. For example, the target system can also be made only from one piece of •17- 201202456. The shielding member 20 may cover at least a portion of the end portion of the target, that is, the non-erosion region formed at the target when the shielding member 20 is not provided. For example, it may be provided only at the end of the long side direction. Further, in the second embodiment, the tapered portions are provided at the end portions of the targets 41a and 41b, and are formed in a sloped shape. However, the present invention is not limited thereto, and may be on the lower surface side of the mask member 20. And set the cone. Even with such a configuration, the distance between the mask member 20 and the target can be increased. Further, as the mask member 20, it is sufficient that at least the upper end portion of the target can be covered, and for example, it may be formed only by the flange portion 22. Further, in the above-described first to third embodiments, the shielding members 20 are not provided in the outer side of the targets 132a to 132d of the both ends and the targets 132a to 132d of the target 132d. The shielding member 20 may be provided at the outer side of the side by side arrangement direction. In other words, in the first embodiment, each of the targets 132a to 132d is covered by the shielding member 20 at both end sides in the wide direction. According to this configuration, since the non-erosion area A2 can be more reliably covered, the non-adhering particles adhering to the non-erosion area A2 can be reduced. Further, as shown in the first to third embodiments, the shielding member 20 is provided between at least the target material facing the substrate S, and the film can be attached to the region opposite to the substrate S. Since the non-adhering particles on the eroded area A2 are sufficiently reduced, the possibility of mixing non-adhering particles in the film formed on the substrate can be sufficiently reduced, whereby the film forming property can be sufficiently improved. -18- 201202456 l. [Industrial Applicability] The sputtering apparatus of the present invention has a high film forming property. Therefore, it can be used in the semiconductor component manufacturing industry and the solar cell component manufacturing industry. BRIEF DESCRIPTION OF THE DRAWINGS [FIG. 1] A schematic cross-sectional view of a sputtering apparatus according to a first embodiment. Fig. 2 is a schematic cross-sectional perspective view of the vicinity of a target in the sputtering apparatus of the first embodiment. Fig. 3 is a schematic top view showing a part of the target material and the shielding member of the first embodiment. Fig. 4 is a schematic cross-sectional view showing the vicinity of a target in the sputtering apparatus of the second embodiment. [Fig. 5] A graph showing the measurement results of the reference examples and the comparative examples. Fig. 6 is a schematic cross-sectional view of the vicinity of the target in the sputtering apparatus of the third embodiment. [Description of main component symbols] I: Splashing device II: Vacuum chamber 12: Gas introduction means -19-201202456 1 3 : Target assembly 1 4: Magnet member 2 〇: Shielding member 21: Shielding body 22: Flange portion 23: support member 4 1 a, 4 1 b : target 42 : shielding member 1 2 1 a, 1 2 1 b : mass flow controller 122: gas introduction tube 1 2 3 a : gas source 131a to 131d: back plate 132a to 132d: target 1 3 3 a to 1 3 3 b : AC power supply 141 : support portion 142 : center magnet 143 : peripheral magnet 231 : plate portion 23 2 : protrusion 2 3 3 : association member A 1 : erosion Area A 2 : Non-erosion area 5 : Substrate-20-