JP2004285445A - Sputtering method and apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering method and apparatus which inhibit scattering of sputter particles in areas other than a substrate and therefore improve deposition speed and utilization efficiency of a target material. <P>SOLUTION: In the sputtering method or apparatus, a magnetic field is generated in a direction perpendicular to sputtering surfaces 1' and 1a' on a pair of targets 1 and 1a which are located facing each other with a prescribed interval in a vacuum vessel 2. The targets 1 and 1a are subjected to sputtering, and the sputter particles scattered from the sputtered targets are deposited on the surface of the substrate 13 placed adjacent to a space 5. The targets 1 and 1a are slanted so that the sputtering surfaces 1' and 1a' each face the substrate surface 13' and that the angle between the sputtering surfaces 1' and 1a' is >0° and ≤45°. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【００３９】
【表２】

【００４０】
表１に示すように、成膜時間６分３３秒、スパッタ電力０．５ｋＷで行った場合において、実施例１では成膜レートが１３０７Å／分であったのに対し、比較例１では成膜レートが８３１Å／分であり、実施例１での成膜レートは比較例１での成膜レートの約１．５７倍となった。
【００４１】
また、成膜時間３分３９秒、スパッタ電力１．０ｋＷで行った場合において、実施例２では成膜レートが１７０２Å／分であったのに対し、比較例２では成膜レートが１４１２Å／分であり、実施例２での成膜レートは比較例２での成膜レートの約１．２１倍となった。
表２に示すように、ＤＣ反応性スパッターの場合の実施例３では、成膜レートが８８３Å／ｍｉｎであったのに対し、比較例３では成膜レートが４２７になり実施例３での成膜レートは比較例３の約２．０７倍となった。
【００４２】
このように、ターゲット１，１ａの両スパッタ面１’，１ａ’をいずれも基板１３の被成膜面１３’に向くように傾斜させることで、基板１３への成膜速度が向上することが確認された。
【００４３】
【発明の効果】
以上説明したように本発明によると、一対のターゲットを用いて基板上に膜を形成するスパッタ方法及びスパッタ装置であって、スパッタ粒子の基板以外の領域への発散を抑制でき、これにより基板への成膜速度を向上させることができ、それだけ成膜のためのコストを低く抑えることができるとともに、ターゲット材の利用効率を向上させることができ、例えば、真空容器内面へのスパッタリング防止用の防着手段等が設けられる場合には、該防着手段の交換頻度を少なくすることができ、それだけメンテナンスコストを低く抑えることができるスパッタ方法及びスパッタ装置を提供することができる。
【図面の簡単な説明】
【図１】本発明に係るスパッタ方法を実施するスパッタ装置の一例を示す概略構成図である。
【図２】従来の一対のターゲットを用いたスパッタ装置の一例を示す概略構成図である。
【符号の説明】
１，１ａ…ターゲット １’，１ａ’…スパッタ面 ２…真空容器 ５…空間
１３…基板 １３’…被成膜面 α…両スパッタ面１’，１ａ’のなす角度[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a sputtering method and a sputtering apparatus for forming a film on a substrate.
[0002]
[Prior art]
As an example of a conventional sputtering method and sputtering apparatus for forming a film on a substrate, a magnetron sputtering method and apparatus can be given.
[0003]
In this magnetron sputtering method and apparatus, a magnetic field is generated in one target placed in a vacuum vessel, the target is sputtered, and sputter particles scattered from the sputtered target adhere to the film-forming surface of the substrate. Then, a film is formed on the substrate.
[0004]
In such a magnetron sputtering method and apparatus, one target may be arranged so as to be inclined in a V-shaped cross section so that sputtered particles enter the substrate at a specific angle, and a film may be formed on the substrate. (For example, see Patent Document 1).
[0005]
In any case, in the magnetron sputtering method and apparatus, the substrate is damaged or the film quality is deteriorated due to the influence of plasma, more specifically, the impact of charged particles such as secondary electrons and negative ions struck out of the target surface. Easy to do.
[0006]
Therefore, a facing target type sputtering method and apparatus for forming a film on a substrate using a pair of targets may be adopted. In the sputtering method and apparatus for forming a film on a substrate using the pair of targets, a pair of targets each having a sputtering surface, and a predetermined interval in a vacuum vessel so that the two sputtering surfaces face each other. A magnetic field is generated in a direction perpendicular to the respective sputtering surfaces of the pair of targets arranged in parallel, and the pair of targets is sputtered, and sputter particles scattered from the pair of sputtered targets are generated. A film is formed on the substrate by attaching the film-forming surface to the film-forming surface of a substrate provided so as to face a space formed between the two sputtering surfaces by the pair of targets.
[0007]
More specifically, in this sputtering method and apparatus, for example, as shown in FIG. 2, a discharge gas made of an inert gas such as argon (Ar) is introduced into a vacuum vessel 50, and a substrate holder at a ground potential is placed in the vacuum vessel 50. A pair of targets 51 and 51a, which are arranged in parallel in the vacuum chamber 50 at a predetermined interval and serve as an anode, supply sputtering power from a power source 56 and use the magnetic field generating means 53 and 53a to supply the targets 51 and 51a. When a magnetic field is generated in the space 54 formed therebetween, sputtering is performed. At this time, sputter particles emitted from the pair of targets 51 and 51a are scattered so that the film formation surface 55a faces the space 54. The film adheres to the deposition surface 55 a of the substrate 55 to be provided, and a film is formed on the substrate 55. As a result, the film can be formed in a state that is hardly affected by charged particles such as secondary electrons and negative ions struck out of the target surface by the influence of plasma, that is, a so-called plasma-free state.
[0008]
[Patent Document 1]
JP-A-2002-129319
[Problems to be solved by the invention]
However, in such a sputtering method and apparatus using a pair of targets, the film is formed in a state in which charged particles such as secondary electrons and negative ions struck from the target surface hardly receive an impact, that is, a so-called plasma-free state. Although it is possible, sputter particles are easily diverged to regions other than the substrate, and the film formation rate (that is, the film formation rate) is smaller than that of the above-described conventional magnetron sputtering method and apparatus. Expensive. Also, sputtering may be performed on the inner surface of the vacuum vessel other than the substrate, and the utilization efficiency of the target material is likely to be reduced. For this reason, a deposition-preventing means (for example, such as the deposition-preventing plates 54 and 54a in FIG. 2) or the like for preventing sputtering on the inner surface of the vacuum vessel may be provided. And maintenance costs increase.
[0010]
The present invention has been made in view of the above problems, a sputtering method and a sputtering apparatus for forming a film on a substrate using a pair of targets, it is possible to suppress the divergence of sputter particles to regions other than the substrate, As a result, the film formation rate on the substrate can be improved, the cost for film formation can be kept low, and the utilization efficiency of the target material can be improved. It is an object of the present invention to provide a sputtering method and a sputtering apparatus which can reduce the frequency of replacement of the deposition-preventing means when a deposition-preventing means or the like for prevention is provided, thereby keeping the maintenance cost low. .
[0011]
[Means for Solving the Problems]
The inventors of the present invention have conducted intensive studies in order to solve the above-mentioned problems, and found the following.
[0012]
That is, a pair of targets each having a sputter surface, each of which is disposed in the vacuum chamber at a predetermined interval so that the two sputter surfaces face each other, is perpendicular to the respective sputter surfaces. In addition to generating a magnetic field in a desired direction, the pair of targets is sputtered, and sputter particles scattered from the pair of sputtered targets are formed between the two sputtering surfaces by the pair of targets. In a sputtering method and a sputtering apparatus in which a film is formed on a substrate by adhering to the film-forming surface of a substrate provided so as to face a space, the pair of targets have the two sputtering surfaces both. By tilting the substrate so as to face the film-forming surface, specifically, the angle between the two sputtering surfaces (and For example, by setting the angle formed by the surfaces extending in the direction along the two sputtering surfaces to be larger than 0 ° and 45 ° or less, the directivity of the flight of the sputtered particles toward the substrate is increased. The divergence to the region other than the above is suppressed, whereby the film formation rate (film formation rate) on the substrate can be increased.
[0013]
In addition, since the directivity of the flight of the sputtered particles toward the substrate side is enhanced, in other words, the divergence to the region other than the substrate is suppressed, the sputtering on the inner surface of the vacuum vessel is reduced, and the use of the target material is correspondingly reduced. Increase efficiency. Therefore, in the case where the deposition preventing means for preventing sputtering on the inner surface of the vacuum vessel is provided, the frequency of replacing the deposition preventing means can be reduced. In addition, when the substrate is turned in the direction along the substrate surface during the film formation, the film formation speed is further improved and a substantially uniform film can be formed.
[0014]
The present invention is based on such knowledge, and in order to solve the above-described problem, a pair of targets each having a sputter surface, and at a predetermined interval so that the two sputter surfaces face each other in a vacuum vessel. A magnetic field is generated in a direction perpendicular to the respective sputtering surfaces of the pair of targets arranged, and the pair of targets is sputtered, and sputter particles scattered from the pair of sputtered targets are deposited. In a sputtering method, a surface is attached to the film formation surface of a substrate provided to face a space formed between the two sputtering surfaces by the pair of targets to form a film on the substrate,
The pair of targets are disposed so as to be inclined such that both of the sputtering surfaces face the film formation surface of the substrate,
A sputtering method characterized in that an angle formed by the two sputtering surfaces (more specifically, an angle formed by a surface extending in a direction along the both sputtering surfaces) is larger than 0 ° and 45 ° or less; A pair of targets having a sputtering surface, and a pair of targets arranged at a predetermined interval in a vacuum vessel so that the two sputtering surfaces face each other, and A magnetic field generating means for generating a magnetic field in a vertical direction, a target holder for supporting the pair of targets, and a substrate for supporting the substrate, and a deposition surface of the substrate is formed between the two sputtering surfaces by the pair of targets. A substrate holder provided so as to face the space to be formed, wherein the pair of targets supported by the target holder A magnetic field is generated by the magnetic field generation means in a direction perpendicular to the respective sputtering surfaces, and the pair of targets is sputtered, and sputter particles scattered from the pair of sputtered targets are transferred to the substrate holder. In a sputtering apparatus which forms a film on the substrate by being attached to the film formation surface of a substrate which is supported and provided so that the film formation surface faces the space,
The pair of targets are disposed so as to be inclined such that both of the sputtering surfaces face the film formation surface of the substrate,
Provided is a sputtering apparatus, wherein an angle formed by the two sputtering surfaces (further, an angle formed by a surface extending in a direction along the both sputtering surfaces) is larger than 0 ° and 45 ° or less.
[0015]
“To face the substrate surface” in the present invention refers to an angle formed between one of the pair of targets and the surface on which the film is formed on the substrate (in other words, in the direction along one of the sputtering surfaces). The angle between the extending surface and the surface of the substrate extending in the direction along the film formation surface) and the angle between the other sputtering surface and the film formation surface of the substrate (in other words, along the other sputtering surface). (The angle formed between the surface extending in the direction and the surface extending in the direction along the film formation surface of the substrate).
[0016]
In the sputtering method and the sputtering apparatus according to the present invention, since the pair of targets are inclined so that both of the two sputtering surfaces are directed to the film-forming surface of the substrate, specifically, the two sputtering surfaces are formed. Since the angle is larger than 0 ° and 45 ° or less, the directivity of the flight of the sputtered particles toward the substrate can be increased, in other words, the divergence of the sputtered particles to a region other than the substrate can be suppressed, As a result, the film formation speed on the substrate can be improved, and the cost for film formation can be reduced accordingly. In addition, since the directivity of the sputtered particles flying toward the substrate can be increased, in other words, the divergence to the region other than the substrate can be suppressed, so that sputtering on the inner surface of the vacuum vessel can be suppressed, and the target material can be reduced accordingly. Efficiency can be improved. For example, in the case where a deposition preventing means for preventing sputtering on the inner surface of the vacuum vessel is provided, sputtering on the inner face of the vacuum vessel can be suppressed, so that the frequency of replacing the deposition preventing means can be reduced, and the maintenance cost is accordingly reduced. Can be kept low. In addition, by rotating the substrate in the direction along the film formation surface of the substrate during film formation, the film formation speed can be further improved and a substantially uniform film can be obtained. In this case, the sputtering apparatus according to the present invention makes the substrate holder rotatable and rotates the substrate holder so that the substrate can be turned in a direction along the film formation surface of the substrate. May be further provided.
[0017]
As described above, according to the sputtering method and the sputtering apparatus according to the present invention, it is possible to suppress spattering particles from diverging to a region other than the substrate, thereby increasing the film forming speed on the substrate, and thereby increasing the film forming speed. The cost can be kept low, and the utilization efficiency of the target material can be improved. For example, when a deposition prevention means for preventing sputtering on the inner surface of the vacuum vessel is provided, the frequency of replacement of the deposition prevention means is reduced. And maintenance costs can be reduced accordingly.
[0018]
Furthermore, in the sputtering method and the sputtering apparatus according to the present invention, the directivity of the flying of the sputtered particles is increased, so that the directionality of the scattered particles in forming the film is easily made uniform. Thereby, a film having regularity of particles and having advanced crystallization, for example, a film having excellent gas barrier properties can be obtained.
[0019]
If the angle between the two sputtering surfaces of the pair of targets is greater than 0 °, the directivity of the flight of the sputtered particles toward the substrate can be increased. This makes it impossible to perform the operation, and furthermore, it is liable to be impacted by charged particles such as secondary electrons and negative ions struck out of the target surface, and the substrate is easily damaged and the film quality is easily deteriorated. The angle between the two sputtering surfaces is more preferably about 10 ° to 30 °.
[0020]
In the sputtering method and the sputtering apparatus according to the present invention, the pair of targets are arranged so as to be inclined such that both of the sputtering surfaces face the deposition surface of the substrate. It is desirable to arrange them so that the angles with respect to the substrate deposition surface are substantially the same.
[0021]
The film that can be formed by the sputtering method and the sputtering apparatus according to the present invention is not particularly limited, and examples thereof include a metal film, an alloy film, a semiconductor film, a metal oxide film, and a metal nitride film. .
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic configuration diagram showing an example A of a sputtering apparatus for performing a sputtering method according to the present invention.
[0023]
The sputtering apparatus A shown in FIG. 1 includes a pair of targets 1, 1a, a vacuum vessel 2, target holders 3, 3a, a power supply 6 for supplying sputtering power, magnetic field generating means 10, 10a, a substrate holder 14, an exhaust device 15, a gas supply. The vacuum vessel 2 includes a target 16, a target 1, a substrate holder 14, and deposition prevention plates 17 and 17 a.
[0024]
Each of the pair of targets 1 and 1a is made of an indium tin alloy (IT), and has a sputter surface 1 'and 1a', respectively. The targets 1 and 1a are placed in the vacuum chamber 2 at a predetermined interval (here, between the central portions P and Pa of the sputtering surfaces 1 'and 1a', d in the drawing so that the two sputtering surfaces 1 'and 1a' face each other. = 160 mm). The target holders 3 and 3a support the targets 1 and 1a, respectively, and are attached to the vacuum vessel 2 via insulating plates (not shown).
[0025]
In addition, the pair of targets 1 and 1a are arranged on the target holders 3 and 3a so as to be inclined such that both sputtering surfaces 1 'and 1a' face the film formation surface 13 'of the substrate 13. Specifically, the angle α between the two sputtering surfaces 1 ′ and 1a ′, more specifically, the angle α between the surfaces extending in the direction along the two sputtering surfaces 1 ′ and 1a ′ is greater than 0 ° and 45 °. The following is 20 degrees in this example. At this time, in this example, the sputter surfaces 1 'and 1a' are arranged so as to be inclined such that the angles of the sputter surfaces 1 'and 1a' with respect to the substrate deposition surface 13 'are substantially the same angle β (80 degrees in this example).
[0026]
The power supply 6 for supplying sputtering power can apply a constant DC power, and supplies sputtering power using the substrate holder 14 at the ground potential as an anode and the targets 1 and 1a as cathodes.
[0027]
Here, the magnetic field generating means 10 and 10a are both permanent magnets, and are respectively disposed on the outer surfaces of the targets 1 and 1a. More specifically, the magnetic field generating means 10 is arranged so that the N pole faces the outer surface of the target 1 in order to generate a magnetic field in a direction perpendicular to the sputtering surface 1 '. Are arranged such that the S pole faces the outer surface of the target 1a in order to generate a magnetic field in a direction perpendicular to the sputtering surface 1a '. Thus, a magnetic field is formed between the sputtering surfaces 1 ', 1a' of the targets 1, 1a.
[0028]
The substrate holder 14 supports the substrate 13 and is provided so that the film formation surface 13 'of the substrate 13 faces the space 5 formed between the two sputtering surfaces 1', 1a 'by the targets 1, 1a. is there. As a result, the substrate 13 is supported by the substrate holder 14, is provided facing the space 5 such that the film formation surface 13 ′ faces, and is provided in the vacuum vessel 2 via the substrate holder 14. Here, the shortest distance between a straight line L connecting the center portions P and Pa of the two sputtering surfaces 1 'and 1a' of the targets 1 and 1a and the substrate deposition surface 13 'is e = 175 mm in the drawing.
[0029]
An exhaust device 15 is connected to the vacuum vessel 2 and a gas supply device 16 for discharging gas is connected to the vacuum container 2. The gas supply device 16 includes inert gas introduction pipes 16 'and 16a' for supplying an inert gas (here, argon (Ar) gas) arranged near the targets 1 and 1a, respectively.
[0030]
At the bottom of each of the pair of targets 1 and 1a in the figure, there is provided a deposition preventing means (in this example, deposition prevention plates 17 and 17a) for preventing sputtering on the inner surface of the vacuum vessel 2.
[0031]
In the sputtering apparatus A described above, when forming a thin film on the film formation surface 13 ′ of the substrate 13, first, the inside of the vacuum vessel 2 is set to a predetermined pressure (here, 0.68 Pa) by the exhaust device 15, and then gas supply is performed. Argon gas (Ar) is introduced by the device 16 from the inert gas introduction pipes 16 ′, 16 a ′. Then, a sputter power is supplied between the substrate holder 14 and the targets 1 and 1a by the sputter power supply power supply 6 and the magnetic field generating means 10 and 10a are used between the sputter surfaces 1 'and 1a' of the targets 1 and 1a. When a magnetic field is generated in the space 5 to be formed, the target 1, 1a is sputtered in the space 5 to generate plasma in which sputtered particles, secondary electrons, argon gas ions, and the like are scattered. Is trapped. Thus, the sputtered particles scattered from the targets 1 and 1a are applied to the substrate 13 provided so that the film formation surface 13 'faces the space 5 formed between the two sputter surfaces 1' and 1a 'by the targets 1 and 1a. A thin film can be formed on the substrate 13 by being attached to the film formation surface 13 ′.
[0032]
At this time, since the targets 1 and 1a are inclined so that both the sputtering surfaces 1 'and 1a' face the film-forming surface 13 'of the substrate 13, specifically, the sputtering surfaces 1' and 1a '. Is larger than 0 ° and 45 ° or less, the directivity of the flight of the sputtered particles toward the substrate 13 can be increased. The divergence can be suppressed, whereby the film formation speed on the substrate 13 can be improved, and the cost for film formation can be reduced accordingly. In addition, since the directivity of the sputtered particles flying toward the substrate 13 can be increased, in other words, the divergence to a region other than the substrate 13 can be suppressed, so that the sputtering on the inner surface of the vacuum vessel 2 can be suppressed, The use efficiency of the target material can be improved accordingly. Here, the deposition prevention plates 17 and 17a are provided as deposition prevention means for preventing sputtering on the inner surface of the vacuum vessel 2. However, since sputtering on the inner surface of the vacuum vessel 2 can be suppressed, the deposition of the deposition prevention plates 17 and 17a is prevented. The frequency of replacement can be reduced, and the maintenance cost can be reduced accordingly. In addition, the sputtering apparatus A of FIG. 1 makes the substrate holder 14 rotatable and rotates the substrate holder so that the substrate 13 can be turned in the direction along the film formation surface 13 ′. It may be configured to further include a rotation drive device. By doing so, the substrate 13 can be turned in the direction along the film formation surface 13 ', so that the film formation speed can be further improved and a substantially uniform thin film can be obtained.
[0033]
As described above, according to the sputtering apparatus A, it is possible to suppress sputter particles from diverging to a region other than the substrate 13, thereby increasing the film formation speed on the substrate 13, and thereby reducing the cost for film formation. In addition to the above, it is possible to improve the utilization efficiency of the target material, and when the anti-sputtering means 17, 17a for preventing sputtering on the inner surface of the vacuum vessel 2 is provided as in this example, the anti-deposition The replacement frequency of the means 17 and 17a can be reduced, and the maintenance cost can be reduced accordingly.
[0034]
Further, in the sputtering apparatus A, the directionality of the flying particles is easily increased when the thin film is formed by increasing the directivity of the flight of the sputtering particles. Thereby, a thin film having regularity of particles and having advanced crystallization, for example, a thin film having excellent gas barrier properties can be obtained.
[0035]
The present invention is not limited to the above embodiment, and specific configurations of other members constituting the sputtering apparatus are not limited to the above embodiment.
[0036]
(Example)
Next, in the sputtering apparatus A shown in FIG. 1, as Examples 1 and 2, the angle α between the two sputtering surfaces 1 ′, 1 a ′ of the targets 1, 1 a was set to 20 ° and the substrates of the sputtering surfaces 1 ′, 1 a ′ were formed. The case where the angle with respect to the film-forming surface 13 ′ is 80 ° and the case where the targets 1 and 1a are arranged so that both sputtering surfaces 1 ′ and 1a ′ are parallel to each other as Comparative Examples 1 and 2, The film forming rate (film forming rate) is the same as when the angle α between the surfaces 1 ′ and 1a ′ is 0 ° and the angles of the sputtering surfaces 1 ′ and 1a ′ with respect to the substrate film forming surface 13 ′ are both 90 °. ), Which will be described below. However, the present invention is not limited to those embodiments.
[0037]
In Example 1 and Comparative Example 1, the film formation time was 6 minutes and 33 seconds, and the sputtering power supplied from the power supply 6 was 0.5 kW. In Example 2 and Comparative Example 2, the film formation time was 3 minutes. For 39 minutes, the sputtering power supplied from the power supply 6 was set to 1.0 kW.
[0038]
Tables 1 and 2 show the film forming conditions and measurement results.
Table 2 shows the film forming conditions by DC reactive sputtering and the measurement results.
[Table 1]

[0039]
[Table 2]

[0040]
As shown in Table 1, when the film formation time was 6 minutes and 33 seconds and the sputtering power was 0.5 kW, the film formation rate was 1307 ° / min in Example 1, whereas the film formation rate was in Comparative Example 1. The rate was 831 ° / min, and the film formation rate in Example 1 was about 1.57 times the film formation rate in Comparative Example 1.
[0041]
When the film formation time was 3 minutes and 39 seconds and the sputtering power was 1.0 kW, the film formation rate in Example 2 was 1702 ° / min, whereas the film formation rate in Comparative Example 2 was 1412 ° / min. The film formation rate in Example 2 was about 1.21 times the film formation rate in Comparative Example 2.
As shown in Table 2, the film formation rate in Example 3 in the case of DC reactive sputtering was 883 ° / min, whereas the film formation rate in Comparative Example 3 was 427, and the film formation rate in Example 3 was The film rate was about 2.07 times that of Comparative Example 3.
[0042]
As described above, by inclining both the sputtering surfaces 1 ′ and 1 a ′ of the targets 1 and 1 a so as to face the film-forming surface 13 ′ of the substrate 13, the film-forming speed on the substrate 13 can be improved. confirmed.
[0043]
【The invention's effect】
As described above, according to the present invention, there are provided a sputtering method and a sputtering apparatus for forming a film on a substrate using a pair of targets, in which divergence of sputter particles to a region other than the substrate can be suppressed, and The film formation rate can be improved, and the cost for film formation can be reduced accordingly, and the utilization efficiency of the target material can be improved. For example, the prevention of sputtering on the inner surface of the vacuum vessel can be prevented. In the case where the attaching means is provided, it is possible to provide a sputtering method and a sputtering apparatus which can reduce the frequency of replacement of the attaching means and accordingly can reduce the maintenance cost.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram illustrating an example of a sputtering apparatus that performs a sputtering method according to the present invention.
FIG. 2 is a schematic configuration diagram illustrating an example of a conventional sputtering apparatus using a pair of targets.
[Explanation of symbols]
1, 1a: Target 1 ', 1a': Sputtered surface 2: Vacuum container 5: Space 13: Substrate 13 ': Film forming surface α: Angle formed by both sputtering surfaces 1', 1a '

Claims (2)

A direction perpendicular to the respective sputtering surfaces of a pair of targets each having a sputtering surface and arranged in a vacuum vessel at a predetermined interval such that the two sputtering surfaces face each other. A magnetic field is generated, and the pair of targets is sputtered, and sputtered particles scattered from the pair of sputtered targets are deposited in a space where a film formation surface is formed between the two sputtering surfaces by the pair of targets. In a sputtering method for forming a film on the substrate by adhering to the film formation surface of the substrate provided to face,
The pair of targets are arranged so as to be inclined such that both of the sputtering surfaces face the film formation surface of the substrate,
A sputtering method, wherein the angle between the two sputtering surfaces is greater than 0 ° and 45 ° or less. A pair of targets each having a sputtering surface, a pair of targets arranged in a vacuum vessel at a predetermined interval such that the two sputtering surfaces face each other, and the respective sputtering surfaces of the pair of targets. A magnetic field generating means for generating a magnetic field in a direction perpendicular to the target, a target holder for supporting the pair of targets, and a substrate for supporting the substrate; A substrate holder provided so as to face a space formed in the target holder, wherein a magnetic field is generated by the magnetic field generating means in a direction perpendicular to the respective sputtering surfaces of the pair of targets supported by the target holder. Generating, and sputtering the pair of targets to form the pair of sputtered targets. The sputtered particles scattered from the substrate are adhered to the deposition surface of the substrate supported by the substrate holder and provided with the deposition surface facing the space to form a film on the substrate. In the sputtering equipment,
The pair of targets are disposed so as to be inclined such that both of the sputtering surfaces face the film formation surface of the substrate,
An angle between the two sputtering surfaces is greater than 0 ° and 45 ° or less.

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