JP2013147711A - Vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus having a constitution capable of more reliably controlling the arc discharge therein.SOLUTION: The vapor deposition apparatus includes a processing chamber CHB for performing the film deposition of an object WF while the object WF is held therein, a target member TGT consisting of a target material which is a material for performing the film deposition on a surface of the object WF, and a shield material SLD for protecting a wall surface inside the processing chamber. By the collision of ions to be supplied inside the processing chamber with the target member TGT, the target material scattered from the target member TGT is film-deposited on the surface of the object WF. At least a part of a surface of the shield material SLD, facing the target member TGT is covered with an insulating material.

Description

  The present invention relates to a vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus for forming a film using sputtering.

  As a technique for forming a film using so-called sputtering, for example, there is a PVD (Physical Vapor Deposition) method. A gas such as argon is introduced into a processing chamber of a vapor phase growth apparatus (PVD apparatus) for forming a film by the PVD method. The gas in the processing chamber is ionized by the high voltage applied to the processing chamber. If this ionized gas is drawn into a negatively applied target and collides with the surface of the target, for example, the material constituting the target is released as particles. These particles reach the surface of the object to be processed, for example, the surface of the semiconductor substrate and adhere to the surface. By repeating this process, a target material is formed on the surface of the object to be processed.

  However, at this time, a film may be formed not only on the surface of the processing object but also on the wall surface in the processing chamber. If the target material deposited on the wall surface is subsequently peeled off, the vacuum environment in the processing chamber may be contaminated, and the quality of the deposited thin film may be degraded.

  Therefore, in order to suppress such a problem, it is preferable that the processing is performed in a state where a member called a shield material is attached so as to cover the wall surface in the processing chamber. Since the shield material can be easily removed and replaced with respect to the processing chamber, the effect of suppressing deterioration of the environment in the processing chamber can be enhanced.

  Incidentally, a phenomenon called arc discharge (arcing) may occur in the region between the target and the shield material. When an arc discharge occurs, each member may be damaged around the place where the arc discharge occurred. In addition, a member damaged by arc discharge may induce another discharge. Specifically, for example, an interlayer insulating film formed on the surface of the semiconductor substrate may break down due to arc discharge, and discharge (surface arc discharge) may occur in the portion where the breakdown occurs.

  Therefore, a technique for suppressing arc discharge in a PVD apparatus provided with a shielding material is disclosed in, for example, Japanese Patent Application Laid-Open No. 2006-144129 (Patent Document 1).

JP 2006-144129 A

  According to Paschen's law, which will be described later, the possibility of occurrence of arc discharge between the target and the shielding material changes according to the distance between the target and the shielding material. In Japanese Patent Laid-Open No. 2006-144129, it is difficult to keep the distance between the target and the shield material constant due to the thermal expansion of the shield material, and the occurrence of arc discharge due to the inevitable change in the distance is suppressed. Therefore, the temperatures of the shield material and the target material (film forming material) are controlled to be substantially equal.

  However, according to Paschen's law, which will be described later, the susceptibility to arc discharge greatly changes when the distance between the target and the shield material slightly changes. That is, arc discharge may occur due to a delicate dimensional error in the installation of the shield material in the processing chamber. Therefore, it is difficult to completely suppress the occurrence of arc discharge by the method disclosed in JP-A-2006-144129.

  The present invention has been made in view of the above problems. The object is to provide a vapor phase growth apparatus having a configuration that can more reliably suppress arc discharge inside.

A vapor phase growth apparatus according to an embodiment of the present invention has the following configuration.
The vapor phase growth apparatus includes a processing chamber for forming a film while holding the object inside, a target member made of a target material that is a material to be formed on the surface of the object, and an inside of the processing chamber. And a shielding material for protecting the wall surface. The target material scattered from the target member is formed on the surface of the target object by the ions supplied into the processing chamber colliding with the target member. In the shield material, at least a part of the surface facing the target member is covered with an insulating material.

A vapor phase growth apparatus according to another embodiment of the present invention has the following configuration.
The vapor phase growth apparatus includes a processing chamber for forming a film while holding the object inside, a target member made of a target material that is a material to be formed on the surface of the object, and an inside of the processing chamber. And a shielding material for protecting the wall surface. The target material scattered from the target member is formed on the surface of the target object by the ions supplied into the processing chamber colliding with the target member. In the shield material, at least a part of the region facing the target member is formed of an insulating material.

  According to this embodiment, at least a part of the surface of the shield material facing the target member is covered with the insulating material or formed of the insulating material, so that the arc discharge between the target member and the shield material. Is suppressed.

It is a schematic sectional drawing which shows the structure of the 1st example of the PVD apparatus which concerns on embodiment of this invention. It is a general | schematic expanded sectional view which shows the structure of the area | region II enclosed with the round dotted line in FIG. It is a schematic sectional drawing which shows the 1st example of a structure of the earth shield which concerns on embodiment of this invention. It is a schematic sectional drawing which shows the structure of the 2nd example of the PVD apparatus which concerns on embodiment of this invention. It is a graph explaining Paschen's law. It is a schematic sectional drawing which shows the 2nd example of a structure of the earth shield which concerns on embodiment of this invention. It is a schematic sectional drawing which shows the 3rd example of a structure of the earth shield which concerns on embodiment of this invention. It is a schematic sectional drawing which shows the 4th example of a structure of the earth shield which concerns on embodiment of this invention.

Hereinafter, a PVD apparatus according to an embodiment of the present invention will be described with reference to the drawings.
Referring to FIGS. 1 and 2, the PVD apparatus according to the present embodiment includes a chamber CHB, a target member TGT, a shield material SLD, a vacuum exhaust device VCM, a gas supply pipe GST, and a magnet MGT. Have. The chamber CHB is a processing chamber for holding an object such as the semiconductor wafer WF inside and forming a film on the surface of the semiconductor wafer WF. Specifically, a pedestal PED is disposed on the inner bottom surface of the chamber CHB. A wafer heating stage HS is disposed on the pedestal PED. An electrostatic chuck stage STG is installed on the base PED (wafer heating stage HS). After the semiconductor wafer WF placed on the wafer heating stage HS is fixed by the electrostatic chuck stage STG, a thin film is formed on the surface of the semiconductor wafer WF by the PVD method.

  The platen ring PLR is placed on a part of the wafer heating stage HS (a region outside the wafer heating stage HS in plan view) so as to cover the surface of the wafer heating stage HS. The platen ring PLR is made of, for example, SUS, and has a function of suppressing film formation on the surface of the wafer heating stage HS.

The target member TGT is a metal member made of titanium (Ti), for example, and is placed inside the chamber CHB as a metal material (target material) for forming a film on the surface of the semiconductor wafer WF. The target member TGT is preferably disposed so as to face the semiconductor wafer WF. For example, when the semiconductor wafer WF is disposed on the lower side of the chamber CHB (facing upward), the target member TGT is preferably disposed on the upper side of the chamber CHB (facing downward). However, the present invention is not limited to this. For example, the semiconductor wafer WF may be disposed above the chamber CHB and the target member TGT may be disposed below the chamber CHB. The semiconductor wafer WF may be disposed on the right side (left side) of the chamber CHB. May be arranged on the left side (right side) of the chamber CHB. The target member TGT is usually applied with a high negative voltage V _T during processing (operation).

  A backing plate BP is disposed on the back side of the target member TGT, whereby the target member TGT is attached to the inside of the chamber CHB (inner side wall surface, upper wall surface, etc.). That is, the target member TGT is fixedly supported by the backing plate BP. The backing plate BP is preferably made of any one material selected from the group consisting of various copper alloys such as oxygen-free copper, aluminum, aluminum alloys, molybdenum and titanium.

  The vacuum evacuation device VCM is a vacuum pump used to make the inside of the chamber CHB into a high vacuum state, and is connected to the inside of the chamber CHB.

  The chamber CHB is supplied with a material that can be an ion used to discharge (scatter) the target material of the target member TGT. An example of this material is an inert gas. The gas supply pipe GST is a pipe for introducing an inert gas into the chamber CHB particularly during the film forming process of the semiconductor wafer WF. Here, the inert gas is ionized inside the chamber CHB to be used for promoting the discharge of the target member TGT. The inert gas is preferably an argon (Ar) gas, for example. In FIG. 1, the inert gas is supplied to the inside from the upper side of the apparatus. However, the present invention is not limited to this mode. For example, the inert gas is supplied from the lower side of the apparatus or from the side of the apparatus. It may be configured as follows.

  The shield material SLD is a plate-like plate material attached to cover the side wall surface CHS in order to protect the side wall surface CHS inside the chamber CHB. The shield material SLD includes an earth shield ES, an upper shield US, and a lower shield LS. Usually, the earth shield ES, the upper shield US, and the lower shield LS are arranged in this order from the upper side of the chamber CHB. The earth shield ES attached on the uppermost side of the chamber CHB is preferably arranged in the vicinity of the target member TGT, and specifically, for example, is preferably arranged so as to surround the target member TGT in plan view. The earth shield ES is not limited to the target member TGT itself, and may be disposed so as to surround an electrode for applying a voltage to the target member TGT in a plan view, for example.

  The earth shield ES, the upper shield US, and the lower shield LS are all preferably made of a durable metal member such as SUS or titanium. In this way, it is possible to suppress damage to the inner side wall surface of the chamber CHB from the ionized plasma of an inert gas such as argon supplied into the chamber CHB when the semiconductor wafer WF is processed. Since the shield material SLD can be easily removed and replaced from the side wall surface of the chamber CHB, for example, a cleaning operation for removing a thin film deposited on the surface of the shield material SLD can be facilitated.

  Further, by forming the shielding material SLD from SUS or titanium, the mechanical strength of the shielding material SLD can be improved. For example, even if the shielding material SLD attached to the inside of the chamber CHB falls, it is affected by an impact. The possibility of breakage can be reduced. The shield material SLD formed of SUS or titanium is likely to become high temperature due to, for example, the energy of particles during the sputtering process. When the shield material SLD becomes high temperature, it is possible to prevent the film forming material (target material) attached to the surface of the shield material SLD from peeling off. Furthermore, since the shielding material SLD formed of SUS or titanium is excellent in chemical resistance, chemical cleaning with an alkaline chemical or hydrofluoric acid is easily performed.

  The earth shield ES is in a so-called floating state without potential being applied during processing (operation). However, a ground potential may be applied to the earth shield ES. The upper shield US and the lower shield LS may also be in a floating state during processing. Both the earth shield ES, the upper shield US, and the lower shield LS have a role of preventing the inner side wall surface of the chamber CHB from being deposited and contaminated by covering the inner side wall surface of the chamber CHB during processing.

  An insulating ring IR is disposed between the earth shield ES and the wall surface of the chamber CHB. The insulating ring IR has a function of electrically insulating the chamber CHB and the target member TGT by being disposed between the wall surface (functioning as an anode) of the chamber CHB and the target member TGT (functioning as a cathode). The insulating ring IR is preferably made of a resin material such as polytetrafluoroethylene. Further, for example, an insulating member IM made of polytetrafluoroethylene may be disposed between the earth shield ES and the wall surface of the chamber CHB, for example, similarly to the insulating ring IR.

  1 and 3, earth shield ES is arranged to be supported by plate-like region PLT extending along the side wall surface of chamber CHB, insulating member IM, insulating ring IR, and the like. And a support area SPT. The plate-like region PLT has a generally flat plate-like shape, whereas the support region SPT generally has a more three-dimensional shape than the plate-like region PLT.

  A protrusion PR is formed in a part of the support region SPT. The protrusion PR means a region of the earth shield ES whose surface is raised in a convex shape as compared with other regions.

  A magnet MGT is disposed above the target member TGT and the backing plate BP. The magnet MGT efficiently ionizes an inert gas such as argon supplied into the chamber CHB by supplying a magnetic field into the chamber CHB or efficiently releases gas particles emitted from the target member TGT. It has a function to ionize.

  As described above, the PVD apparatus of the first example of the present embodiment in FIG. 1 is normally used in a state where no voltage is applied to the ground shield ES. On the other hand, referring to FIG. 4, the PVD apparatus of the second example of the present embodiment basically has the same configuration as the PVD apparatus of the first example of FIG. It differs from the PVD apparatus of FIG. 1 in that it acts as an ion reflector.

Specifically, in the PVD apparatus of FIG. 4, a high positive voltage V _E is applied to the earth shield ES during processing. In this way, the positive ions of the target material (titanium) constituting the target member TGT released so that the argon ions supplied into the chamber CHB may be ejected by colliding with the target member TGT are converted into the chamber CHB. Is reflected by a high positive voltage V _E applied to the side surface of. That is, when the potential of the same polarity (here positive) as the ions of the target material scattered in the chamber CHB is applied to the earth shield ES, the ground shield ES can reflect positive ions on the surface thereof. It becomes. Therefore, the positive ions of the target material can be guided to change the traveling direction to, for example, the direction in which the semiconductor wafer WF is placed by reflection on the surface of the earth shield ES. Therefore, the target material can be more efficiently deposited on the semiconductor wafer WF.

The protrusion PR of the earth shield ES is preferably formed in order to give the earth shield ES a role as an ion reflector. Therefore, the protrusion PR is particularly preferably formed with respect to the shield material SLD of the PVD apparatus of FIG. 4, and may not necessarily be formed in the shield material SLD of the PVD apparatus of FIG. Further, the high positive voltage V _E applied to serve as an ion reflector is not limited to the earth shield ES but may be the upper shield US or the lower shield LS below the ground shield ES.

  The protrusion PR is preferably formed on the surface of the earth shield ES on which it is formed so as to face the target member TGT when the earth shield ES is attached to the chamber CHB. The surface facing here means the entire surface on the side facing the target member TGT. For example, the target member TGT is disposed on the right side of the earth shield ES shown on the left side of FIGS. 1 and 4. More specifically, for example, the earth shield ES disposed in the left region when attached to the PVD apparatus is disposed on the right side (earth shield ES) even if the region is disposed below the target member TGT. It is preferable that the protrusion PR is formed on the surface on the side where the is disposed. Therefore, the protrusion PR is formed on the right surface of the earth shield ES.

  Furthermore, the PVD apparatus of FIG. 4 has a configuration capable of applying a high-frequency voltage RF to the semiconductor wafer WF (pedestal PED). In this way, the gas particles to be formed in the chamber CHB (scattered from the target member TGT) are guided toward the upper side of the semiconductor wafer WF from an angle near to the surface of the semiconductor wafer WF. Efficiency can be improved.

  Referring to FIGS. 2 and 3 again, as described above, the earth shield ES itself is preferably made of a metal member such as SUS or titanium, but at least a part of the surface of the earth shield ES is an insulator. It is preferably coated with an insulating thin film CR (insulating material) which is a thin film of It is preferable that at least a part of the surface of the projecting portion PR is coated with an insulating thin film CR (insulating material) among the surface of the earth shield ES. Regardless of the presence or absence of the protrusion PR, the insulating thin film CR is formed so as to cover at least a part of the surface of the earth shield ES facing the target member TGT.

  Not only the support region SPT but also the plate-like region PLT may have a minute protrusion PR. In this case, as shown in FIG. 3, it is preferable that the minute protrusion PR of the plate-like region PLT is also coated with the insulating thin film CR.

  In particular, it is preferable that the surface of the projection PR having the sharpest tip is coated with the insulating thin film CR.

The insulating thin film CR is preferably made of a ceramic material among insulating materials, and is preferably made of alumina (Al ₂ O ₃ ) among ceramic materials. The insulating thin film CR is preferably formed to have a thickness of 50 μm or more and 500 μm or less. The insulating thin film CR is preferably formed by, for example, plasma spraying. As shown in FIG. 3, for example, in order to form the insulating thin film CR only in a part of the region such as the surface of the protrusion PR, it is preferable to form the film after masking with a seal tape, for example.

Referring to FIG. 5, the curve of the graph shows the data of the discharge voltage value according to the so-called Paschen's law for each gas type. Here, data when helium (He), neon (Ne), argon (Ar), hydrogen (H ₂ ), and nitrogen (N ₂ ) gases are used are shown. The horizontal axis of the graph indicates the product pd (Torr · m) of the gas pressure p (Torr) in the chamber CHB and the distance d (m) between the pair of electrodes, and the vertical axis indicates the voltage required for discharge. (V) is shown. That is, the smaller the voltage value shown on the vertical axis, the easier the discharge occurs.

  In the range A in which the value of pd in FIG. 5 is relatively small, the distance d at which electrons are accelerated from one of the pair of electrodes toward the other, and the pressure p representing the number of gas molecules emitting secondary electrons. Since both values are small, arc discharge is unlikely to occur between the pair of electrodes.

  In the range B where the value of pd in FIG. 5 is medium, although there is a slight difference depending on the type of gas, the distance d where the electrons accelerate and the pressure p corresponding to the number of gas molecules emitting secondary electrons. Both conditions are optimal for the occurrence of arc discharge. Therefore, in the range B, arc discharge is likely to occur between the pair of electrodes.

  In the range C where the value of pd in FIG. 5 is relatively large, the electric field strength between the electrodes decreases because the distance d between the pair of electrodes is large. Moreover, since the value of p is large, the number of gas molecules is large and the mean free path of electrons is shortened. Therefore, in the range C, arc discharge is unlikely to occur between the pair of electrodes.

  However, for any gas, in the range B, it can be seen that if the value of pd slightly changes, the value of the discharge voltage changes abruptly. That is, if the distance d between the electrodes slightly changes, it can be said that the possibility of arc discharge may change abruptly.

  Here, the distance d between the electrodes is not limited to a member that actually functions as an electrode, but can be considered as a distance between any two points where a potential difference occurs. For example, the distance d can be considered as the distance d between the projection PR of the earth shield ES and the target member TGT. This is because the earth shield ES (protrusion PR) is at ground potential, and a high negative potential is applied to the target member TGT, and a high potential difference is generated between the two.

  Therefore, particularly when the projection PR is present on the earth shield ES, for example, even if the position where the earth shield ES is attached slightly changes to an error that naturally occurs, an arc is generated between the earth shield ES and the target member TGT. There is a possibility that the possibility of occurrence of discharge changes rapidly.

  In particular, the protrusion PR of the earth shield ES tends to be arranged at a position where the value of pd in FIG. 5 corresponds to the range B with respect to the shortest distance d from the target member TGT. That is, the arc discharge is likely to occur between the projection PR of the earth shield ES and the target member TGT.

  From the above, by covering the surface of the projection PR, which is particularly likely to induce arc discharge, with the insulating thin film CR in the earth shield ES, the projection PR and the target are independent of the distance between the projection PR and the target member TGT. The occurrence of arc discharge with the member TGT can be suppressed. If the occurrence of arc discharge is suppressed, problems such as damage to surrounding members, dielectric breakdown on the surface of the semiconductor wafer WF, and peeling of a thin film formed by PVD processing on the surface of the semiconductor wafer WF can be avoided. it can.

  However, it is preferable to cover the surface of the region where the arc discharge is likely to occur between the earth shield ES and the target member TGT with the insulating thin film CR even if it is other than the protrusion PR.

  Further, if the occurrence of arc discharge is suppressed, the film forming material (target material) adhering to the surface of the shield material SLD is peeled off by applying arc discharge energy, which contaminates the inside of the chamber CHB. Can also be suppressed.

  The upper shield US and the lower shield LS are usually disposed at positions corresponding to the range C in FIG. 5 because the distance from the target member TGT is large. That is, since arc discharge hardly occurs between these shield materials and the target member TGT, the surfaces of these shield materials need not be covered with the insulating thin film CR. However, for example, when the processing pressure is very low, the distance between part of the surfaces of the upper shield US and the lower shield LS and the target member TGT is likely to cause arc discharge according to Paschen's law. There is. In this case, it is preferable that at least a part of the surface of the upper shield US and the lower shield LS is covered with the insulating thin film CR as in the case of the earth shield ES. Also, in the upper shield US and the lower shield LS, the protrusion PR may be formed on a part of the surface facing the target member TGT particularly when the upper shield US and the lower shield LS are mounted inside the chamber CHB. May be covered with an insulating thin film CR.

Next, an operation principle of the PVD apparatus having the above configuration will be described.
A semiconductor wafer WF such as silicon to be processed is placed on the electrostatic chuck stage STG on the wafer heating stage HS, and the semiconductor wafer WF is electrostatically chucked by the electrostatic polarization of the electrostatic chuck stage STG. Fixed on the STG.

In this state, the inside of the chamber CHB is brought into a high vacuum state by the vacuum exhaust device VCM. At this time, an inert gas such as argon is supplied from the gas supply pipe GST to the inside of the chamber CHB. Further, a high DC voltage V _T is applied to the target member TGT.

  Due to the energy of the high negative potential of the target member TGT (high DC voltage between the target member TGT and the semiconductor wafer WF), the argon gas supplied into the chamber CHB is ionized to generate positively charged ions (plasma). Become.

The positive ions of the argon gas are attracted to the high negative potential V _T of the target member TGT and collide with the target member TGT. At this time, for example, titanium material constituting the target member TGT is vaporized by being subjected to the collision of positive ions (plasma), and is released (scattered) into the chamber CHB. Since the inside of the chamber CHB is in a high vacuum state, the released gas particles of the target member TGT are opposed to the target member TGT without being substantially disturbed by other gas particles drifting inside the chamber CHB. It progresses toward the semiconductor wafer WF arranged as described above.

  As described above, a part of the argon gas may become positive ions due to the energy of the DC voltage. However, some of them become positive ions by secondary electrons emitted from the target member TGT almost simultaneously with the collision of the positive ions with the target member TGT and the release of the target material (titanium). Specifically, the secondary electrons swivel between the magnetic poles of the magnet MGT not accurately shown in FIGS. 1 and 4 by the magnetic field of the magnet MGT and the electric field of the target member TGT as the cathode. When the revolving secondary electrons collide with the argon gas, the argon gas is efficiently ionized, and high-density plasma can be formed as argon ion plasma.

  In particular, as shown in FIG. 4, when the earth shield ES has a function as an ion reflector, gas particles (target material) discharged from the target member TGT are efficiently charged to positive ions in the chamber CHB. Is preferred. In this case, specifically, for example, the target material (for example, titanium) emitted from the target member TGT is efficiently charged to positive ions by using the magnetic field distribution in the chamber CHB by the rotation of the magnet MGT. For example, when the material of the target member TGT is a material having a high so-called sputtering rate such as copper (Cu), so-called self-holding discharge (discharge without argon gas) may be possible.

  When the gas particles of the target member TGT reach the surface of the semiconductor wafer WF and come into contact therewith, they solidify and accumulate on the surface. Since the surface of the semiconductor wafer WF is lower in temperature than the gas particles of the target member TGT that has been bombarded with positive ions and released into the chamber CHB, it solidifies when the gas particles reach the surface of the semiconductor wafer WF. On the surface.

  At this time, all the gas particles emitted from the target member TGT are radiated from the target member TGT in all directions rather than toward the semiconductor wafer WF. For this reason, the gas particles also travel toward the shield material SLD and reach the surface of the shield material SLD. At this time, the gas particles are deposited so as to form a thin film on the surface of the shield material SLD in the same manner as on the semiconductor wafer WF.

  Referring to FIG. 6, insulating thin film CR may be formed not only on a part of the surface of earth shield ES (the surface of protrusion PR) but also on the entire surface as shown in FIG. However, by forming the insulating thin film CR only on the projections PR that are particularly susceptible to arc discharge, the area for forming the insulating thin film CR is reduced, so that the film forming cost can be reduced.

  Referring to FIG. 7, projection portion PR and its vicinity among ground shield ES may be formed of insulating material CM. Specifically, in the earth shield ES of FIG. 7, a part of the surface thereof, that is, for example, a region where the surface of the earth shield ES is covered with the insulating thin film CR in the earth shield ES of FIG. It is supposed to be. Therefore, for example, at least a part of the protrusion PR of the earth shield ES may be formed of the insulating material CM. However, it is preferable that at least a part of a region (representing the entire surface on the opposite side) facing the target member TGT is formed of the insulating material CM when attached to the PVD apparatus regardless of the presence or absence of the protrusion PR. .

  The insulating material CM is preferably made of a ceramic material such as alumina, which is the same as the insulating thin film CR. Even when the protrusion PR is formed using the insulating material CM, the occurrence of arc discharge from the protrusion PR can be suppressed as in the case where the surface of the protrusion PR is covered with the insulating thin film CR. Therefore, even when the earth shield ES shown in FIG. 7 is used, the same effect as that obtained when the earth shield ES whose surface is covered with the insulating thin film CR is obtained by suppressing the arc discharge.

  In FIG. 7, the region other than the projection PR and the vicinity thereof in the earth shield ES is formed of a durable metal member MTL such as SUS or titanium as in the case of the other earth shield ES. However, referring to FIG. 8, the entire earth shield ES may be formed of an insulating material CM. Even in this case, as in the case of the earth shield ES of FIGS. 3, 6, and 7, an effect is obtained by suppressing the occurrence of arc discharge from the earth shield ES.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention can be applied particularly advantageously in PVD devices having a shielding material.

  BP backing plate, CHB chamber, CHS side wall surface, CM insulating material, CR insulating thin film, ES earth shield, GST gas supply pipe, HS wafer heating stage, IM insulating member, IR insulating ring, LS lower shield, MGT magnet, MTL metal Member, PED base, PLR platen ring, PLT plate area, PR protrusion, RF high frequency voltage, SLD shield material, SPT support area, STG electrostatic chuck stage, TGT target member, US upper shield, VCM vacuum exhaust system, WF Semiconductor wafer.

Claims (5)

A processing chamber for forming a film while holding the object inside;
A target member made of a target material which is a material to be deposited on the surface of the object;
A shielding material for protecting the inner wall surface of the processing chamber;
The target material scattered from the target member due to the ions supplied into the processing chamber colliding with the target member is formed on the surface of the object,
A vapor phase growth apparatus in which at least a part of a surface of the shield material facing the target member is covered with an insulating material.   The vapor phase growth apparatus according to claim 1, wherein a surface of the shield material facing the target member includes a protrusion, and at least a part of the protrusion is covered with an insulating material. A processing chamber for forming a film while holding the object inside;
A target member made of a target material which is a material to be deposited on the surface of the object;
A shielding material for protecting the inner wall surface of the processing chamber;
The target material scattered from the target member due to the ions supplied into the processing chamber colliding with the target member is formed on the surface of the object,
A vapor phase growth apparatus in which at least a part of a region facing the target member in the shield material is formed of an insulating material.   4. The vapor phase growth apparatus according to claim 3, wherein a region of the shield material facing the target member includes a protrusion, and at least a part of the protrusion is formed of an insulating material.   5. The vapor phase growth apparatus according to claim 1, wherein the shield material is disposed in the vicinity of the target member and is given a potential having the same polarity as that of the scattered target material.

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