JP2001192818A - Member for thin film deposition system and producing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a member for thin film deposition system effectively preventing the peeling of deposits formed on the inner wall of a thin film deposition system and on the surface of an equipment member at the inside of the system without contam inating the inside of the thin film deposition system and supporting the generation of particles and to provided a method for producing the same. SOLUTION: In this member for a thin film deposition system, the part in which the unneeded deposition of a thin film occurs on the inner wall of a thin film deposition system or on the partial face or the whole face of a member in the system is provided with wavy ruggedness parallel to the flying direction of a thin film deposition material. In the method for producing the member for a thin film deposition system, masking is executed to the part in which the unneeded deposition of a thin film occurs on the inner wall of a thin film deposition system or on the partial face or the whole face of a member in the system in such a manner that wavy ruggedness parallel to the direction of the flying direction of a thin film deposition material is formed, next, the same is subjected to etching working, and, after that, the masking is removed to form plural wavy ruggedness.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a member for a thin film forming apparatus which generates less particles during film formation, and a method of manufacturing the same. In this specification, unless otherwise specified, the thin film forming apparatus member includes a target.

[0002]

2. Description of the Related Art In recent years, a thin film forming technique by vapor phase growth has been used for many of an electrode of an integrated circuit, a thin film for a diffusion barrier, a magnetic thin film for a magnetic recording medium, and an ITO transparent conductive film of a liquid crystal display device. The thin film formation technology by the vapor phase growth method includes a thermal decomposition method, a hydrogen reduction method, a non-uniform reaction method, and a plasma CVD
Chemical vapor deposition methods such as the chemical vapor deposition method, physical vapor deposition methods such as the vacuum deposition method, the sputtering method and the ion beam method, and the discharge polymerization method. In particular, sputtering, which is one of the vapor deposition methods, can be applied to a wide range of materials as described above,
It is also widely used because the control of thin film formation is relatively easy. This sputtering method is well known,
The sputtering target is bombarded by the charged particles, the particles of the material constituting the bombardment are knocked out of the target by the bombardment force, and the particles are adhered to a substrate, such as a wafer, which is arranged to face the target. This is a film forming method for forming a thin film by using

In the formation of a thin film by vapor phase growth such as the above-mentioned sputtering, the problem of generation of particles has come to be taken up greatly. For example, when the target is sputtered, a thin film is deposited not only on the substrate but also on the inner wall of the thin film forming apparatus and on members inside the thin film forming apparatus. It is considered that the flakes separated from the members and the like in the thin film forming apparatus directly scatter and adhere to the surface of the substrate, which is one factor of particle generation. In addition, foreign substances called nodules, which are considered to be formed as nuclei from flakes peeled off from the target side surface or members in the thin film forming apparatus, grow on the target surface to a diameter of about several μm. It is considered that such nodules are crushed when they have grown to some extent, and scatter and adhere to the substrate surface as one of the factors of particle generation. If the above-mentioned particles are deposited on the thin wiring on the substrate, for example, in the case of an LSI, problems such as short-circuiting of the wiring or disconnection may occur.

Recently, the integration degree of LSI semiconductor devices has increased (16 Mbits, 64 Mbits, and even 256 Mbits).
(M bits, etc.) On the other hand, since the wiring width (rule) is becoming finer, for example, less than 0.25 μm, the problems such as disconnection or short circuit of the wiring due to the above-mentioned particles occur more frequently. became. As described above, as the degree of integration and miniaturization of electronic device circuits increase, the generation of particles has become a more serious problem.

As described above, as one of the causes of the generation of particles, the deposition of a thin film on a portion of the inner wall or inside of a thin film forming apparatus where film formation is not normally necessary is required. The problem is raised greatly. More specifically, the deposition is performed on a peripheral portion of the substrate, a shield, a backing plate, a shutter, a target, and a support thereof.

[0006] As described above, since unnecessary thin film deposition occurs, this film peels off and scatters, causing particles to be generated. Therefore, these deposits become thicker and become thinner before peeling. The inner wall of the forming equipment, the periphery of the substrate, the shield,
Attempts have been made to periodically clean or replace the backing plate, shutters, targets and their supports. In addition, a metal sprayed film is formed on a portion of a member (equipment) where a large amount of material is deposited so that the thin film once adhered does not peel off and scatter (see Japanese Patent Application Laid-Open No.
Japanese Patent Application Laid-Open No. Sho 62-56277 and Japanese Patent Application Laid-Open No. 8-176816) and a method in which a physical surface roughening treatment such as a blast treatment is performed to capture sediments.
42758).

[0007] Furthermore, since the above-mentioned work was considered to cause a reduction in the work efficiency of the thin film formation, a removable plate called an anti-adhesion plate for capturing the sediment so as not to peel or scatter was devised. Further, the thermal expansion coefficient of the plate was changed, and the surface of the plate was subjected to sandblasting or hairline treatment (Japanese Patent Laid-Open No. 63-1628).
No. 61, JP-A-2-285067, JP-A-3-138
354). Among these, a so-called particle getter which has been subjected to a special surface treatment is an epoch-making one which effectively prevents the generation of particles in the technology at that time (JP-A-1-316456, JP-A-3-31645). -87357
No.).

However, recently, as described above, the aspect ratio of a contact hole or a via hole has been increased to 3 or more due to the miniaturization of the wiring rule as described above. As a result, it has become difficult to fill these holes with the conventional sputtering method. . For this reason, highly directional sputtering such as collimation sputtering and long throw has appeared, and the input power of these sputterings is as large as twice or more than that of the conventional one. For this reason, the density and the spread of the plasma formed at the time of sputtering are expanded, and the shield, collimator,
The surface layers of these targets were sputtered simultaneously with the deposition of the thin film.

As a means for capturing the above-mentioned deposits so as not to be separated or scattered, a metal sprayed coating or a blasting treatment applied directly to the inner wall of the device or the device or on a deposition-preventing plate is carried out. In the case of the blast treatment, the blast material itself, and the blast material remaining on the member is sputtered particularly at the beginning of the sputtering, thereby causing a problem that the entire inside of the sputtering apparatus is contaminated. In addition, even if the above-mentioned deposition-preventing plate alone has its own thickness, there is a limit to the mounting position, and if the power to be applied by sputtering is significantly increased as described above, a metal spray coating or a blasting material A similar problem occurred.

As described above, particle generation still exists. Means such as a metal spray coating or a blast treatment employed to prevent the generation of particles, or an anti-adhesion plate provided with these, rather cause contamination of the thin film. Became a very important problem. For this reason, the present applicant has found that a large number of irregularities (for example, hemispherical shapes) are formed by etching on the inner wall of a thin film forming apparatus or on a part of or the entire surface of a member in the apparatus where unnecessary thin film deposition occurs. Has been proposed (see JP-A-10-30971). Although the present invention is an epoch-making device that does not cause contamination inside the apparatus and can effectively suppress the generation of particles, the deposited films and layers have some variations, which induces internal strain and causes the generation of particles. This has been found to be a cause, and the present invention has been further improved to prevent this.

[0011]

DISCLOSURE OF THE INVENTION The present invention effectively prevents separation of deposits formed on the inner wall of a thin film forming apparatus and on the surface of equipment members inside the apparatus without contaminating the inside of the thin film forming apparatus. It is another object of the present invention to provide a member for a thin film forming apparatus which suppresses generation of particles and a method for manufacturing the same.

[0012]

SUMMARY OF THE INVENTION The present invention relates to the following: (1) A direction in which a thin film-forming substance comes to a portion where an unnecessary thin film is deposited on an inner wall of a thin film forming apparatus or a part or entire surface of a member in the apparatus. 2. The member for a thin film forming apparatus as described in 1 above, wherein the member for a thin film forming apparatus is provided with corrugations which are parallel to the surface of the thin film forming apparatus. Member 3. The member for a thin film forming apparatus according to the above item 2, wherein the period of the unevenness is 1 to 1000 μm. 4 The member for the thin film forming device according to the above item 2, wherein the period of the unevenness is 10 to 500 μm. (5) The member for a thin film forming apparatus described in (1) to (4) above, wherein the height of the unevenness is 10 to 500 μm. 6) The above (1), wherein the height of the unevenness is 20 to 200 μm. 4 no The member for the thin film forming apparatus described in each of the above items 7. The part of the inner wall of the thin film forming apparatus or the part where the unnecessary thin film is deposited on a part or the entire surface of the member in the apparatus is made of a metal or an alloy. The sum of detection areas of contaminant elements other than gaseous element elements such as oxygen, nitrogen and carbon by EPMA analysis of the metal or alloy member is less than 0.1% per unit area.
6. The member for a thin film forming apparatus described in 6 above. 8. The direction of the corrugations is in the range of parallel to ± 45 ° in the direction in which the thin film forming material comes in. For thin film forming equipment. ,I will provide a.

The present invention further provides: (9) a waveform which is parallel to the direction in which the thin-film-forming substance comes in, on the inner wall of the thin-film forming apparatus or on a part or the entire surface of a member in the apparatus where unnecessary thin-film deposition occurs. A method for manufacturing a member for a thin film forming apparatus, characterized in that masking is performed so as to form irregularities and then etching is performed, and then the masking is removed to form a plurality of corrugated irregularities. The method for manufacturing a member for a thin film forming apparatus described in the above item 9, wherein the irregularities are constant and regularly arranged. 11 The period of the unevenness is 1 to 1000 μm. Method for manufacturing a member for a thin film forming apparatus 12 Method for manufacturing a member for a thin film forming apparatus as described in 10 above, wherein the period of the unevenness is 10 to 500 μm 13 The height of the unevenness is 10 to 5 The method for manufacturing a member for a thin film forming apparatus according to any one of the above items 9 to 12, wherein the height of the unevenness is 20 to 200 μm. Method for manufacturing member for thin film forming apparatus 15 A part of the inner wall of the thin film forming apparatus or a part of the member in the apparatus where unnecessary thin film deposition occurs on a part or entire surface of the member is made of metal or alloy, and the metal or alloy is used. (9) The sum of detection areas of contaminant elements excluding gaseous element elements such as oxygen, nitrogen and carbon by EPMA analysis of the alloy member is less than 0.1% per unit area.
The method of manufacturing a member for a thin film forming apparatus described in any one of the above-mentioned items 14 to 16, wherein the direction of the corrugation is in the range of parallel to ± 45 ° with the direction in which the thin film forming material comes in. The method for manufacturing a member for a thin film forming apparatus according to any one of the above. ,I will provide a.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have conducted intensive studies in order to achieve the above object, and as a result, obtained the following findings. In other words, the conventional metal spray coating is made of a relatively soft metal such as nickel or aluminum that easily adheres to the sprayed object and can absorb the stress of the deposit by sputtering. Since the level is as low as about 2N, if sprayed on a member for a thin film forming apparatus, etc., it directly leads to contamination. In the blasting process, usually used blasting materials such as alumina and silicon carbide have a corrugated or needle-like shape, so they dig into the material to be blasted and remain on the surface. It has been found that the inside of the thin film forming apparatus is widely contaminated, and in the worst case, even the sputtered thin film on the substrate is contaminated.

Therefore, in order to solve such a problem,
As described above, for a thin film forming apparatus in which a large number of irregularities (hemispherical) are formed by etching on a part of the inner wall of the thin film forming apparatus or on a part or entire surface of a member in the apparatus where unnecessary thin film deposition occurs. Proposed components. By this etching, the surface cleanliness is maintained and the surface is roughened, whereby not only sufficient adhesion strength of deposits can be achieved, but also equipment (members) disposed on the inner wall of the thin film forming apparatus or inside the apparatus. ), The surface area (hemispherical) significantly increases the surface area, reduces the amount of deposition per unit area,
In addition, the increase in the internal stress accompanying the increase in the amount of deposition was suppressed, and cracking and peeling of the deposit were significantly reduced. As a result, a large effect of preventing peeling and scattering of the thin film deposited on the member and the like and preventing generation of particles was obtained.

However, it has been found that this method has one disadvantage. That is, since a thin film forming substance (for example, sputtered particles) flies in a specific direction, a portion having a large amount of deposition and a portion having a small deposition amount appear. That is, since hemispherical irregularities formed on the non-erosion portion of the target and other devices (members) have shadows, the portions facing the direction in which the sputtered particles fly are more deposited, and conversely, the shadow portions A phenomenon that no or no amount of the deposit was observed. As a result,
It has been found that non-uniform strain is generated in the deposited film to cause separation of the deposited film, which causes generation of particles. Therefore, it has been necessary to further improve this.

In view of the above, the present invention provides a waveform which is parallel to the direction in which a thin film-forming substance comes to flow, on an inner wall of a thin film forming apparatus or on a part or an entire surface of a member in the apparatus where unnecessary thin film deposition occurs. After the masking is performed so that the irregularities are formed, and then the etching is performed, the masking is removed to form a plurality of corrugated irregularities, thereby overcoming the above-mentioned disadvantages. Unwanted particles of the thin film-forming substance are also deposited on a part of the target surface or on the non-erosion portion on the side surface, so that a similar corrugation is formed on the target surface. Therefore, the member for a thin film forming apparatus of the present invention naturally includes this sputtering target. The direction in which the thin film forming material comes in will be described, for example, in the case where a circular erosion portion is formed using a disk-shaped sputtering target. The direction in which the sputtered particles come is almost directly above (to face) the substrate. Direction) and those that fly to the side fly in the radial direction. That is, most of the unnecessary sputter particles other than those that fly toward the substrate are particles that fly to the side in the radial direction.

In addition to the above, there are some flying particles in a direction which cannot be predicted at random, but in the present invention, these are ignored and the direction in which the direction of most sputtered particles is specified is meant. Depending on the shape of the target in the sputtering apparatus, and in other thin film forming apparatuses, the direction in which the particles fly may show a peculiar trajectory, but this can be easily grasped empirically. As described above, when the erosion portion is circular in the disk-shaped target, most of the unnecessary sputtered particles fly in the radiation direction, that is, in a direction substantially perpendicular to the tangent to the erosion portion. Similarly, when an elliptical erosion portion is formed, the erosion portion also flies in a direction substantially perpendicular to a tangent to the erosion portion. As described above, the direction in which unnecessary sputtered particles fly can be easily predicted in advance.

According to the present invention, corrugations in parallel with the direction in which the thin film-forming substance comes to the surface, ie, corrugations, are formed on the inner wall of the thin film forming apparatus or on a part or the entire surface of a member in the apparatus where unnecessary thin film deposition occurs. The direction of the grooves or ridges of the surface corrugations is formed so as to be parallel to the direction in which the thin film forming substance comes in. As a result, not only the surface area can be significantly increased, the amount of deposition per unit area can be reduced, and the increase in internal stress due to the increase in the amount of deposition can be suppressed. Cracks and peeling have been significantly reduced, and the generation of particles can be effectively suppressed. Also, not only the directions of the corrugations are not always parallel, but also the grooves or ridges of the surface corrugations.
Direction is parallel to the direction in which the thin film-forming substance comes in to ± 45 °
Within this range, the generation of particles can be suppressed without any particular problem. As an example, in a case where the erosion portion is circular when sputtering is performed using a disk-shaped target, for example, radial waveform irregularities are formed in a non-erosion portion on the surface of the target. This shape has a divergent waveform. On the side of the exposed target, corrugations are similarly formed in the thickness direction of the target on an extension of the corrugations of the surface waveform. Although the frequency of sputtered particles flying by wraparound is small, these particles can be easily captured by the waveform portion, and the generation of particles can be suppressed more effectively.

The waveform of the non-erosion portion and the like is
It is desirable to obtain by processing. This etching
Processing simultaneously cleans the surface of non-erosion areas
Can suppress the generation of pollutants
This is because that. In addition, this allows the sediment to
Since there is no contamination layer at the interface, the conventional ZrO ₂And so on
Adhesion is much improved compared to last roughening treatment
You. More adhesion due to the anchor effect of concave or convex parts
In order to have sufficient
The distance between the concave or convex parts is constant and regularly arranged
It is desirable to have been. By doing this
Increases the likelihood of uniform deposition of thin films,
-Effectively show the adhesion by the effect
You.

In order to remarkably increase the surface area and to provide a sufficient adhesion to the deposit due to the anchor effect of the concave portion or the convex portion, the period of the unevenness is preferably 1 to 1000 μm. Is 10 to 50
More preferably, it is 0 μm. Similarly, the height of the unevenness is preferably 10 to 500 μm, and more preferably the height of the unevenness is 20 to 200 μm. Below the respective lower limit values, the anchor effect of the concave portion or the convex portion is small, and, when the upper limit value is exceeded, the anchor effect of the concave portion or the convex portion does not work effectively and the anchor effect of the concave portion or the convex portion does not work effectively, and peeling is likely to occur. That's why. When the value is outside the above lower limit or upper limit, it does not mean that it cannot be used and does not exclude these, but it means that the effect is reduced. Further, as described above, if the direction of the grooves or ridges of the surface waveform is parallel to the direction in which the thin film forming substance comes in the range of ± 45 °, the generation of particles can be effectively suppressed. it can. In general, the approach direction of incoming particles is often not parallel,
It usually has a certain extent, and since the extent of this extent varies depending on the conditions and deposition positions of various film forming processes, it cannot be strictly defined in many cases. But,
Even in the case described above, if the angle is in the range of parallel to ± 45 °, particles can be effectively captured and generation of particles can be suppressed. However, when the incoming directions of the flying particles are almost parallel, the directions of the corrugations (grooves or ridges) are parallel.
Needless to say, it is the most effective.

It is desirable to use a high-purity metal or alloy material as a material constituting a part of the inner wall of the thin film forming apparatus or a part inside the apparatus where unnecessary thin film deposition occurs. In particular, EPMA (Electron Pr)
The sum of the detection areas of contaminant elements excluding light elements such as oxygen, nitrogen, and carbon (herein collectively referred to as gas components) obtained by an Ob Micro Analyzer analysis is 0.1% per unit area of the metal or alloy material. % Is preferred. When the amount of contaminants in the above member is reduced to this level, the deposition of contaminants on the substrate during film formation is significantly reduced.

As described above, in the present invention, masking is performed so as to form corrugations in parallel with the direction in which the thin film forming substance comes in, and then this is etched, and then the masking is removed to form a plurality of corrugations. Forming the irregularities is a more preferable method of forming the irregularities, but it is sufficient that the masking material has, of course, etching resistance and can be easily removed by washing after the etching process. However, there is no particular limitation. As an example, for example, a photocurable resist generally used for forming an electronic circuit can be used.

FIG. 1 shows an example. (A) is a cross section of the processing target material before processing, (B) is a cross section in which a resist is applied to the surface of the processing target material, (C) is a cross section in which a part of the processing target material is removed by performing an etching process, (D) is a schematic explanatory view showing a cross section of the material to be processed from which the resist has been removed after the etching, and is arranged in the order of steps (A) to (D). As shown in FIG. 1, a photocurable resist 2 is uniformly applied to a surface to be roughened on a material 1 to be treated, for example, made of titanium (Ti), and then cured by irradiating light to a portion of the resist to be cured. Let it. After that, the resist 2 at the uncured portion is washed and removed.

Next, an etching material such as an acidic aqueous solution or an alkaline aqueous solution or a reactive gas is selected according to the base material, that is, the material to be processed 1 and the resist material 2. Then, the processing target material 1 coated with the resist material 2 is placed in the selected etching atmosphere, and etching is performed on portions other than where the resist 2 remains to form irregularities on the surface. The state of surface roughening is adjusted by the size of each part to be masked, the number of recesses or projections per unit area, the composition of the etching material used, and the reaction time. FIG. 2 is a schematic view of a plane (A) and a cross section (B) in which corrugations are formed on a material to be processed by etching. As shown in FIG. 2, the irregularities formed by the etching process are arranged at regular intervals and regularly.

The cross section of the concave or convex portion is circular,
Various things such as an oval or a rectangle can be selected. Some shapes may be slightly deformed from the intended shape depending on the etching process.However, these shapes are not particularly limited, and include these various shapes, except for those that are complicated and can produce shading. I do. Although the formation of irregularities was described in the above etching process, the anchor effect of capturing the flying substance is almost the same even when only the concave portions are formed or only the convex portions are formed on the surface of the member or the like by masking and etching. Therefore, the irregularities can be appropriately selected as needed.

[0027]

EXAMPLES In the sputtering apparatus, various types of surface roughened (roughened) titanium shields (members) shown in Table 1 as examples of the present invention were arranged. In this embodiment, the interval between the irregularities is constant, and the irregularities of the waveform are regularly arranged. Reactive (reactive) sputtering was performed in a nitrogen gas atmosphere using titanium as a sputtering target to form a titanium nitride (TiN) thin film on the substrate. About 10 μm Ti
When N was deposited, the sputtering was terminated, the titanium shield was removed from the sputtering device, and a peeling test was performed using a scotch tape. In addition, in order to confirm whether there is a difference due to the type of unevenness of the waveform due to the etching process, the same number of test pieces were prepared by changing the type of unevenness and subjected to a peeling test. In Table 1, the size of the irregularities indicates the period and the height of the concave portions or the convex portions described above. Simultaneously, the presence or absence of contamination due to surface roughening of the TiN thin film formed on the substrate from the titanium shield was analyzed by SIMS (secondary ion mass spectrometry).
For the titanium shield (member), EP
The sum of the detection areas of contaminant elements excluding gas components such as oxygen, nitrogen, and carbon obtained by MA analysis was measured. Note that the EPMA analyzer is an EPMA-87 manufactured by Shimadzu Corporation.
05, acceleration voltage: 15 KV, probe diameter: 1μ
m, sample current: 0.04 μA. The results are summarized in Table 1.

[0028]

[Table 1]

[0029]

COMPARATIVE EXAMPLE As a comparative example, various types of surface roughened titanium shields (members) shown in Table 2 were arranged, and a titanium nitride (TiN) thin film was formed on a substrate by sputtering under the same conditions. About 10 for titanium shield
When the μm TiN was deposited, the sputtering was stopped, the titanium shield was removed from the sputtering device, and a peeling test was performed using a scotch tape. As in the embodiment, the presence or absence of contamination due to surface roughening of the thin film of TiN formed on the substrate coming from the titanium shield is determined by SI.
Analysis was performed by MS (secondary ion mass spectrometry). Regarding the titanium shield (member), the sum of the detection areas of contaminant elements excluding gas components such as oxygen, nitrogen, and carbon obtained by EPMA analysis was measured in advance. In addition, EPMA
The analysis was performed under the same conditions as in the example. The results are summarized in Table 2. In Table 2, those having no corrugated irregularities formed by etching, that is, those having a grindstone or a sprayed coating formed thereon, had the size of irregularities (diameter μm) and the number of irregularities (pieces / mm ² ).
Instead of displaying, this is indicated in parentheses in the column.
Here, the size of the irregularities means the average diameter of the holes of the concave portions or the average diameter of the flat top surface of the convex portions.

[0030]

[Table 2]

Next, the embodiment of the present invention will be described in comparison with a comparative example. As shown in Table 1, the sum of the detection areas of contaminant elements excluding gas components such as oxygen, nitrogen, and carbon obtained by EPMA analysis of the titanium shields (members) in Examples 1 to 10 was 0.1. %
The presence or absence of contamination due to surface roughening of the thin film of TiN formed on the substrate from the titanium shield was analyzed by SIMS (secondary ion mass spectrometry). As a result, no contaminant element was detected. On the other hand, as shown in Comparative Examples 3, 5 and 6, titanium shields (members) obtained by grinding a Si grindstone, those obtained by roughening the surface of SiC blasts, and those subjected to Al spraying were used as main materials by EPMA analysis. Certain Si and Al were detected, and also in the substrate, in the SIMS analysis result, Si and Al of the above-mentioned material were detected, and were contaminated with the same material after sputtering. That is, it is understood that grinding of the grinding stone, roughening of the blast surface, and thermal spraying undesirably pollute the substrate. In Comparative Example 4, since the soft etching treatment was performed after the grinding of the Si grindstone, no contaminants on the substrate were detected.

Next, the results of the peel test are shown in Examples 1 to 3.
In No. 8, the period of the unevenness is 1 to 1000 μm, the height of the unevenness (“wave height”) is 10 to 500 μm, and the direction of the unevenness of the waveform is in the range of parallel to ± 45 ° in the direction in which the thin film forming material comes. In these examples, no peeling occurred.
On the other hand, in all of Comparative Examples 1 to 10, peeling was easily caused as a result of the peeling test. In Comparative Examples 3, 5, and 6, there was a further problem that the grindstone, the blast material, or the thermal spray material became a contaminant. Further, in the examples of the present invention in which the direction of the corrugations was parallel to the direction in which the thin film-forming substance came in the range of ± 45 °, there was no peeling, but as shown in Comparative Examples 9 and 10, In the case of deviating from this range, peeling was recognized. In the examples of the present invention, the same number of tests were performed by changing the type of the concave or convex due to the etching process, but under the condition of the unevenness of the present invention, there was no difference in the releasability depending on the type of the unevenness.

As is clear from the comparison with the comparative example in the above-described embodiment of the present invention, the blast material or the thermal spray material on the inner wall or the internal equipment of the thin film forming apparatus conventionally used for roughening is used. As a result, contamination from the material deposited on the above-described members and scattering due to the separation are significantly reduced, and thus particles are generated in thin film-formed products such as wiring materials formed on the substrate. It can be seen that there is an excellent effect of greatly reducing.

Although the present invention has mainly been described with respect to a sputtering method and apparatus, the present invention is not limited to this example, and can be applied to other thin film forming apparatuses (such as PVD or CVD) by vapor phase growth. Although the present invention has been described based on the above-described example, this is merely an example, and various changes can be made without departing from the gist of the present invention. The present invention includes all of them. In addition, the present invention and other particle generation preventing methods and devices, for example, a particle generation preventing method and device having the above-described hemispherical irregularities formed at a portion where the particles come randomly are used in combination. -The present invention can be appropriately adopted depending on the location of the tickle.

[0035]

According to the present invention, it is possible to effectively prevent exfoliation of deposits formed on the inner wall of the thin film forming apparatus or on the surface of the equipment member inside the apparatus without contaminating the inside of the thin film forming apparatus.
It has an excellent effect of suppressing generation of tickles.

[Brief description of the drawings]

FIG. 1 is a schematic explanatory view of a step showing an example of an etching process.

FIG. 2 is a schematic view of a plane and a cross section in which irregularities are formed on a workpiece by etching.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Material to be processed 2 Resist material 3 Etching part

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Hideyuki Takahashi 187-4 Usuba, Hachikawa-cho, Kitaibaraki-shi, Ibaraki F-term in Nikko Materials Isohara Plant (reference) 4K029 AA02 BA60 CA05 DA09 DA10 5F045 AA19 AB40 BB15 EC05 HA12 5F103 AA08 BB22 BB25 DD30 RR10

Claims (16)

[Claims] 1. A method according to claim 1, wherein an inner wall of the thin film forming apparatus or a part of or an entire surface of a member in the thin film forming apparatus is provided with a corrugated unevenness parallel to a direction in which a thin film forming material comes on. A member for a thin film forming apparatus. 2. The member for a thin film forming apparatus according to claim 1, wherein the irregularities are arranged at regular intervals and are arranged regularly. 3. The member for a thin film forming apparatus according to claim 2, wherein the period of the unevenness is 1 to 1000 μm. 4. The member for a thin film forming apparatus according to claim 2, wherein the period of the unevenness is 10 to 500 μm. 5. The height of irregularities (“wave height”, hereinafter the same) is 1
The member for a thin film forming apparatus according to claim 1, wherein the member has a thickness of 0 to 500 μm. 6. The member for a thin film forming apparatus according to claim 1, wherein the height of the unevenness is 20 to 200 μm. 7. An inner wall of a thin film forming apparatus or a part of a part or an entire surface of a member in the apparatus where unnecessary thin film deposition occurs is made of a metal or an alloy, and the EPMA of the metal or alloy member is used. 7. The thin film formation according to claim 1, wherein a sum of detection areas of contaminant elements excluding gas component elements such as oxygen, nitrogen and carbon by analysis is less than 0.1% per unit area. Equipment members. 8. The member for a thin film forming apparatus according to claim 1, wherein the direction of the corrugations is in a range of parallel to ± 45 ° with respect to the direction in which the thin film forming material comes in. . 9. A corrugated pattern parallel to the direction in which the thin film-forming substance comes in is formed on the inner wall of the thin film forming apparatus or on a part or the entire surface of a member in the apparatus where unnecessary thin film deposition occurs. A method for manufacturing a member for a thin film forming apparatus, characterized in that masking is performed so as to form a plurality of corrugations, and then the masking is removed to form a plurality of corrugations. 10. The method for manufacturing a member for a thin film forming apparatus according to claim 9, wherein the intervals between the concaves and convexes are constant and regularly arranged. 11. The method for manufacturing a member for a thin film forming apparatus according to claim 10, wherein the period of the unevenness is 1 to 1000 μm. 12. The method for manufacturing a member for a thin film forming apparatus according to claim 10, wherein the period of the unevenness is 10 to 500 μm. 13. The method for manufacturing a member for a thin film forming apparatus according to claim 9, wherein the height of the unevenness is 10 to 500 μm. 14. The method for manufacturing a member for a thin film forming apparatus according to claim 9, wherein the height of the unevenness is 20 to 200 μm. 15. A part of the inner wall of the thin film forming apparatus or a part of a member in the apparatus where unnecessary thin film deposition occurs is made of a metal or an alloy, and the EPMA of the metal or alloy member is used. The thin film formation according to any one of claims 9 to 14, wherein a sum of detection areas of contaminant elements excluding gas element elements such as oxygen, nitrogen and carbon by analysis is less than 0.1% per unit area. A method for manufacturing a device member. 16. The member for a thin film forming apparatus according to claim 9, wherein the direction of the corrugations is in the range of parallel to ± 45 ° with respect to the direction in which the thin film forming material comes in. Manufacturing method.