TWI457454B - Method for manufacturing sputtering target, cleaning method for sputtering target, sputtering target, and sputtering device - Google Patents

Description

Method for manufacturing sputtering target, cleaning method for sputtering target, sputtering target, and sputtering device

The present invention relates to a method for producing a sputtering target capable of suppressing generation of particles due to adhesion of a sputtering material, a method for cleaning a sputtering target, a sputtering target, and a sputtering device.

One of the film forming methods for high quality metal films is magnetron sputtering. The sputtering method is generally a plasma in which argon gas is generated in a vacuum, and argon (Ar) ions are collided with a target fixed to the cathode electrode, and sputtering particles containing atoms constituting the target splashed from the surface of the target are deposited. A film formation method on a substrate of a film formation object. The magnetron sputtering method is a film forming method in which a magnetic field is formed on the surface of the target to generate a high-density plasma in the vicinity of the target to achieve a film formation speed.

Typically, the target is bonded to the target of the cathode electrode. The magnetron sputtering method is attached to the back side of the backing plate, and a permanent magnet or an electromagnet for forming a magnetic field is disposed on the surface of the target. Typically, the magnet is attached to the central portion of the target and the peripheral portion, and the intermediate portion of the intermediate portion and the peripheral portion are disposed such that the magnetic field becomes larger. At this time, the sputtering efficiency is high in the intermediate portion of the target, and is small in the central portion and the peripheral portion of the target. The region with high sputtering efficiency is greatly corroded compared to the region with low sputtering efficiency. In general, a region having high sputtering efficiency is referred to as an eroded region, and a region having low sputtering efficiency is referred to as a (non-erosion region) (refer to Patent Document 1).

In this magnetron sputtering method, sputtering particles from an eroded area are deposited on a substrate to form a thin film. In addition, one part of the sputtered particles is also A non-eroded area that accumulates on the surface of the target. At this time, the deposit on the non-erosion area increases in thickness as the sputtering progresses, and is peeled off from the surface of the target by the internal stress of itself. When a deposit peeled off from the surface of the target is mixed with foreign matter (particles) in a film formed on the substrate, significant quality defects may occur.

A solution to this problem is a method of roughening the non-erosion area of the target by sand blasting to increase the adhesion of the deposit. For example, in Patent Document 2, a surface of a target for blasting is described, and the number of batches that can be continuously produced is increased. Further, Patent Document 3 discloses a more effective hardness and particle diameter of a blasting material when blasting a surface of a target.

[Patent Document 1] Japanese Patent Laid-Open No. Hei 7-90576

[Patent Document 2] Japanese Patent Laid-Open No. 4-301074

[Patent Document 3] Japanese Patent Laid-Open No. Hei 7-316804

However, it is not sufficient to smear the non-eroded area of the target by sandblasting to suppress the peeling of the deposit from the surface of the target.

In other words, by blasting the surface of the target, it is possible to suppress the occurrence of frequent particle generation by peeling off the deposit adhering to the surface of the target, but the adhesion of the deposit on the surface of the target is not stable. There are often cases where a large number of particles are suddenly generated. In turn, this sudden generation of particles has a major impact on the quality of the membrane, and there is a problem of reduced yield.

In view of the above, an object of the present invention is to provide a method for reducing the occurrence of sudden particles and achieving film quality and film manufacturing efficiency. A method for manufacturing a sputtering target, a cleaning method for a sputtering target, a sputtering target, and a sputtering device.

In order to solve the above problems, the inventors of the present invention have found that a large number of particles which are suddenly generated are caused by peeling of deposits adhering to the blast material remaining on the surface of the target, and finally complete the present invention. .

That is, the method for producing a sputtering target according to the present invention is a method for producing a sputtering target for a magnetron sputtering apparatus, characterized in that a target body is prepared, and a non-erosion region of the surface of the target body is blasted, super The ultrasonic wave cleans the non-erosion area, etches the non-eroded area of the ultrasonic cleaning, and simultaneously washes and washes with the cleaning liquid, and ultrasonically cleans the non-eroded area.

In the present invention, after the non-erosion area (blasting treatment area) of the surface of the target body is blasted, the surface of the target body is first cleaned by ultrasonic cleaning. Thereby, the blast material remaining in the non-erosion area can remove the blast material whose adhesion is relatively weak with respect to the target body.

Here, the "non-erosion area" means a region other than the erosion region which occurs when the sputtering target is actually used in the present invention. The same is true in the following description. The non-erosive region is not limited to the surface portion to which the erosion region of the sputtering target belongs, but also includes the side surface of the sputtering target.

Second, the non-erosion areas of the ultrasonic cleaning are etched or spray cleaned. In this step, the boundary portion of the blast material and the target body is melted by a small amount by etching treatment, or a physical impact is applied to the blast material by jet cleaning, and the adhesion between the blast material remaining in the non-erosion area and the target body is weakened. .

Thereafter, the ultrasonically cleaned non-eroded areas again. Thereby, it is easy to The blasting material with reduced adhesion to the target body is removed.

By the above-described series of processes, the removal efficiency of the blast material remaining in the non-erosion area of the target body is improved, so that a sputtering target having a clean surface state and a non-erosion area can be obtained. Thereby, it is possible to suppress the occurrence of a sudden large amount of particles due to the blast material remaining in the non-erosion region, and it is possible to form a stable film forming process and a high-quality sputtering film.

In the present invention, the blasting step is such that the surface roughness (arithmetic mean surface roughness: Ra) of the non-erosion region is roughened to 1 μm or more and 4 μm or less. When Ra is less than 1 μm, there is almost no effect of sand blasting. When Ra exceeds 4 μm, the difference in height of the surface of the target becomes too large and the adhesion of the deposit is lowered.

In the present invention, the step of ultrasonically cleaning the non-erosive region is to clean the non-erosion region by a jet of cleaning liquid to which an ultrasonic wave having a frequency of 18 kHz or more and 19 kHz or less is applied. The cleaning liquid to which the ultrasonic wave of the above frequency range is applied is used to improve the cleaning effect by generating a cavity.

Further, the method for cleaning a sputtering target according to the present invention is a method for cleaning a sputtering target which is subjected to sand blasting on at least a part of a surface, wherein the blasting region of the sputtering target is subjected to ultrasonic cleaning and etching ( Etching) The blasting treatment area is cleaned by the ultrasonic cleaning described above, or spray cleaning is performed with a cleaning liquid, and the blasting treatment area is again ultrasonically cleaned.

A sputtering target manufactured or cleaned as described above, comprising: a target body; an eroded region constituting a part of a surface of the target body, which is eroded by sputtering; and a surface constituting the target body Another In part, the surface roughness (Ra) is 1 μm or more and 4 μm or less, and the number of the sandblasting materials having a diameter of 10 μm or more is a non-erodible area of 4 or less per square centimeter.

Among the sputtering targets of the present invention, the non-erosion areas which are roughened by sand blasting have a clean surface state. Thereby, it is possible to suppress the occurrence of a sudden large amount of particles due to the blast material remaining in the non-erosion region, and it is possible to form a stable film forming process and a high-quality sputtering film.

In the present invention, the constituent material of the target body is composed of a metal element or an alloy containing the same as a main component. Examples of the metal element include titanium (Ti), aluminum (Al), copper (Cu), nickel (Ni), cobalt (Co), tantalum (Ta), gold (Au), silver (Ag), and chromium (Cr). Niobium (Nb), platinum (Pt), molybdenum (Mo) or tungsten (W), but is not limited thereto.

Further, the sputtering apparatus of the present invention includes: a vacuum chamber; a substrate supporting table provided inside the vacuum chamber; and a sputtering target disposed to face the substrate supporting table to constitute the target body and One part of the surface of the target body is an eroded area eroded by sputtering; and the other part constituting the surface of the target body has a surface roughness (Ra) of 1 μm or more and 4 μm or less and a diameter of 10 μm or more. The number of the blasting materials is a non-erosion area of 4 or less per square centimeter; and a magnetic flux circuit for forming a magnetic field distribution on the surface of the sputtering target.

In the sputtering apparatus of the present invention, the non-erosion area of the sputtering target has a clean surface state. Thereby, the occurrence of a sudden large amount of particles due to the blast material remaining in the non-erosion area can be suppressed, and a stabilized film can be formed. Form process, high quality sputter film.

As described above, according to the present invention, occurrence of a sudden large amount of particles due to the blast material remaining in the non-erosion area can be suppressed. Thereby, a stable film forming process and a high quality sputter film can be formed.

[Best form for implementing the invention]

Hereinafter, embodiments of the present invention will be described with reference to the drawings. Further, the present invention is not limited to the following embodiments, and various modifications can be made in accordance with the technical idea of the present invention.

Fig. 1 is a schematic configuration diagram of a magnetron sputtering apparatus 20 according to an embodiment of the present invention. The sputtering apparatus 20 of the present embodiment has a vacuum chamber 3 in which a vacuum exhaust pipe 1 and a gas pipe 2 are provided. A vacuum pump (not shown) is connected to the vacuum exhaust pipe 1. The gas pipe 2 is introduced into a vacuum chamber 3 to introduce a process gas (hydrogen gas, oxygen gas, an inert gas such as nitrogen gas or argon gas, a reaction gas, or the like). Inside the vacuum chamber 3, a sputtering cathode 4 and a support table 5 are disposed, and the support table 5 is located on a substrate S for supporting a semiconductor wafer or a glass substrate or the like opposite to the sputtering cathode. The vacuum chamber 3 and the support table 5 are connected to a ground potential.

The sputtering cathode 4 has a sputtering target (hereinafter also referred to as "target") 6, a target holder 7, an insulating plate 8, a frame 9, and a ground shield 10.

The target 6 is joined to the target holder 7. The target base 7 is fixed to the frame 9 via the insulating plate 8. The inside of the target base 7 forms a circulation passage (not shown), and the circulation passage circulates to cool the cooling medium of the target 6. Target base 7 connection The frame 9 is connected to the ground potential via the vacuum chamber 3 by a specific high voltage negative potential source and a high frequency power source. A ground shield 10 for preventing the target holder 7, the insulating plate 8, and the frame 9 from being sputtered is provided around the target 6. The ground shield 10 is fixed to the frame 9.

A magnetic circuit 21 for forming a magnetic field distribution on the surface of the target 6 is provided on the surface opposite to the target 6 of the target holder 7, that is, on the back side. This magnetic circuit 21 is composed of a yoke 11, a ring-shaped permanent magnet 12a disposed on a yoke 11, and a rod-shaped permanent magnet 12b disposed at the center thereof. The magnet 12a and the magnet 12b are disposed on the target holder 7 toward magnetic poles having mutually different polarities. As a result, a magnetic field line M as shown in Fig. 1 is formed on the surface of the target 6. In this example, a magnetic field parallel to the surface of the target is formed on the intermediate portion between the central portion and the peripheral portion of the target 6 opposite to the magnets 12a and 12b.

In the sputtering apparatus 10 configured as described above, argon gas is introduced through the gas pipe 2 inside the vacuum chamber 3 that is exhausted to a specific degree of vacuum. The target base 7 is applied with a high voltage and high frequency power of a specific negative potential, whereby argon plasma can be formed between the target 6 and the support table 5. The argon ions collide with the surface of the target 6 at a high speed to release particles (sputtering particles) containing atoms of the constituent material of the target 6. The sputtered particles released from the surface of the target 6 adhere to the surface of the opposite substrate S to form a thin film.

Further, the collision frequency of the argon atoms generated by the secondary electrons can be increased by the magnetic field component parallel to the surface of the target 6. Thereby, the plasma density can be increased, and the sputtering efficiency of the target 6 can be improved, and the film formation speed can be increased.

By the distribution of the plasma density on the surface of the target 6, compared to the target In the central portion and the peripheral portion of the surface of the material 6, the plasma density is increased in the intermediate portion. The region where the plasma density is high is higher in the sputtering efficiency of the target 6 than in the region where the plasma density is low. Therefore, as shown in FIG. 2, the surface of the target 6 can form an erosion region 6a having a high sputtering efficiency and a non-erosion region 6b having a low sputtering efficiency. The non-erosion area 6b corresponds to the center portion and the peripheral portion of the surface of the target 6, and the erosion region 6a is formed in a ring shape at a position corresponding to the intermediate portion (the mesh portion of Fig. 2).

In this magnetron sputtering method, sputtering particles derived from the eroded region 6a are deposited on the substrate S to form a thin film. In addition, a portion of the sputtered particles are also deposited on the non-erodible region 6b of the surface of the target. At this time, the deposit on the non-erosion area 6b increases in thickness as the sputtering progresses, and is peeled off from the surface of the target by the internal stress of itself. When the deposit peeled off from the surface of the target is mixed into the film formed on the substrate S to become a foreign matter (particle), there is a case where a major quality defect is caused.

In order to prevent this problem, the non-erosion area of the target 6 is roughened by sand blasting, and the method of suppressing the peeling of the deposit of the sputtered particles is effective. However, the blasting treatment in the non-erosion area can reduce the frequency of particle generation, but it cannot suppress the occurrence of sudden particles. This matter is based on the knowledge of the present inventors that the deposit adhering to the blast material remaining in the non-erosion area becomes a cause of peeling.

Therefore, in the present embodiment, the blast material remaining on the surface of the target is removed as much as possible to avoid the occurrence of sudden particles, thereby achieving high-quality film formation. Hereinafter, a method of producing a target according to an embodiment of the present invention will be described.

Fig. 3 is a flow chart showing the steps of the method of manufacturing the target. The method for producing a target according to the present embodiment is characterized by the steps of: preparing a target body; blasting a non-erosion area of the surface of the target body (ST1); and ultrasonically cleaning the non-eroded area by sandblasting Step (ST2); a step of etching the non-erosion area of the ultrasonic cleaning (ST3); and a step of ultrasonically cleaning the non-eroded area (ST4).

[Preparation Step of Target Body]

First, a target body of a specific size and thickness is prepared. The shape of the target body may be any geometric shape such as a circle, an ellipse, a long hole, a square, a rectangle, or the like. The target body is composed of a molded body or a sintered body of a metal element or an alloy containing the same as a main component. Examples of the metal element include titanium (Ti), aluminum (Al), copper (Cu), nickel (Ni), cobalt (Co), tantalum (Ta), gold (Au), silver (Ag), and chromium (Cr). , but not limited to, niobium (Nb), platinum (Pt), molybdenum (Mo) or tungsten (W).

[Blasting treatment step (ST1)]

In this step, a region corresponding to the non-erosion region of the target body (hereinafter simply referred to as "non-erosion region") is roughened by sandblasting. In the present embodiment, a region corresponding to the erosion region of the target body (hereinafter simply referred to as "erosion region") is previously masked by another photomask such as a photoresist such as a photoresist, and the non-erosion region is selected. Sandblasted. Hereinafter, the non-erosion area of the blasting treatment is also referred to as a "blasting treatment area". The blasting treatment zone is not limited to the surface of the target 6, but also includes its side peripheral surface.

As a result of the blasting step, the surface of the treated surface is roughened The degree (arithmetic mean surface roughness: Ra) is, for example, 1 μm or more and 4 μm or less. When Ra is less than 1 μm, there is almost no effect of sand blasting, and when Ra exceeds 4 μm, the difference in height of the surface of the target becomes large, and the adhesion of the deposit is lowered. The surface roughness is adjusted by the particle size of the blast material, the irradiation pressure, the treatment time, and the like. The blasting material may be selected from the group consisting of SiC, glass beads, and alumina depending on the material and use of the target.

By sandblasting, a part of the irradiated blasting material remains adhered or punctured on the blasting treatment area. After blasting, air is blown into the blasting area. Although it is possible to remove the blasting material, the blasting material with high adhesion strength remains.

The method of removing the blasting material remaining in the area of the blasting treatment area is ultrasonically washed. However, only the ultrasonic cleaning by the inventors of the present invention revealed that the effect of removing the blast material remaining in the blasting treatment area was low. That is, in the ultrasonic cleaning at a frequency of 30 to 50 kHz, the effect of removing the blast material adhering to or fixed to the surface of the blast-treated area is high, but the blasting material punctured inside the surface of the blast-treated area cannot be removed. And the identification still continues to remain. Therefore, it was found that the film deposited on the blast material remaining on the blasting material can be easily peeled off as compared with the film directly deposited on the surface of the blasted target body, which is a cause of sudden particles.

Therefore, in the present embodiment, the blasting treatment region is cleaned as follows, and the number of remaining blast materials is reduced, whereby a sputtering target having a high degree of cleanness can be obtained.

[Ultrasonic Washing Step (ST2)]

This step is to ultrasonically clean the blasted area of the target body. In this step, a jet of ultrasonic cleaning liquid is applied to clean the blasting place. Area. The frequency of the ultrasonic wave is highly cleaned by causing cavitation, and is in the range of 18 kHz or more and 19 kHz or less.

Fig. 4 is a view showing a schematic configuration of a cleaning device used in the ultrasonic cleaning step of the target body. In this example, the target body 60 is immersed in the cleaning liquid 14 in the cleaning tank 13, and the cleaning tank 13 is vibrated by the ultrasonic oscillator 17, and the cleaning liquid 14 is circulated through the piping 16 by the driving of the pump 15. . Therefore, the blasting treatment region of the target body 60 is cleaned by the jet flow of the cleaning liquid 14 which is sent to the cleaning tank 13.

In this step, the residual blasting material adhered or fixed to the blasting area of the target body 60 is removed by the jet of the clean washing 14 and the cavitation shock wave generated by the ultrasonic cleaning at a low frequency. It is possible to impart a physical impact to the residual blasting material that is punctured in the blasting treatment area.

[etching process step (ST3)]

Then, the blasting treatment area that has been ultrasonically washed is processed by etching. The etching system can use a wet etching method. The etching liquid system can be appropriately selected depending on the material of the blasting material or the target body, and an appropriate acid or alkali aqueous solution can be used. The treatment method can be applied to a method such as a dipping method or a coating method. In the present embodiment, the target body is immersed in a fluoro-nitric acid aqueous solution to etch the blast-treated region. The treatment time is not particularly limited, but the degree of roughness of the specific surface of the blast-treated area does not largely change. After etching, the target body is cleaned by washing with water or hot water.

In this step, the boundary portion between the blast material piercing the surface of the target body and the target body is slightly melted, so that the physical embedding of the blast material to the target body is weakened. Thereby, the removal cannot be removed in the previous ultrasonic cleaning step. The residual blasting material also weakens the adhesion of the blasting material to the target body.

Further, the effect of the etching treatment is that the same effect can be obtained by spraying high-pressure water to the blasting area. Therefore, it is also possible to replace the above-described etching treatment processing step with a jet cleaning step of a high pressure cleaning liquid. At this time, specifically, high pressure water of 200 to 300 kgf/cm ² and water amount of 20 to 30 liters/min can be used.

[Ultrasonic Washing Step (ST4)]

Finally, the ultrasonic cleaning blasting area is again supersonic. In this step, the same processing conditions as the above-described first ultrasonic cleaning step (ST2) can be employed. That is, using the cleaning device shown in Fig. 4, the blasting treatment region is cleaned at a pressure of 200 to 300 kPa by a jet of a cleaning liquid to which an ultrasonic wave having a frequency of 18 kHz or more and 19 kHz or less is applied.

By this step, the residual blasting material whose physical embedding force to the surface of the target body is alleviated can be efficiently removed in accordance with the previous etching treatment step (or the jet cleaning step by high-pressure washing water). As a result, almost all of the blast material remaining in the blasting treatment area can be removed.

Further, in the ultrasonic cleaning step, the state in which the mask member covering the surface of the target body is removed may be performed, and the mask member may be removed. When this ultrasonic cleaning step is performed in a state where the mask material is removed, the mask material is removed after the etching step (ST3).

As described above, according to the present embodiment, the multi-stage cleaning process consisting of a combination of the sandblasting treatment, the first ultrasonic cleaning, the etching (or the jet cleaning), and the second ultrasonic cleaning is performed. The blast material remaining in the blasting treatment area on the surface of the target body can be efficiently removed.

As described above, a sputtering target 6 can be manufactured which includes: a target body 60; a portion constituting a surface of the target body 60, and an eroded region 6a eroded by sputtering; and constituting the target body 60 The other part of the surface has a surface roughness (Ra) of 1 μm or more and 4 μm or less, and the number of the sandblasting materials having a diameter of 10 μm or more is a non-erodible area of 4 or less per square centimeter.

In the target material 6 of the present embodiment, since the surface roughness of the non-erosion region 6b is in the range of 1 μm or more and 4 μm or less, the adhesion to the sputtering material can be improved, and the peeling of the sputtering material can be suppressed. In addition, since the number of the sandblasting materials having a diameter of 10 μm or more can be suppressed to 4 or less per square centimeter, the sudden large amount of peeling of the sputtering material adhering to the residual blasting material can be greatly reduced. The frequency of occurrence of particles. Thereby, a stable film forming process and a high quality sputter film can be formed.

[Examples]

Hereinafter, examples of the present invention will be described, but the present invention is not limited to the following examples.

(Example 1)

A circular target body made of titanium (purity 5N) having a diameter of 250 mm and a thickness of 6 mm was prepared. Then, a region having a diameter of 30 mm or less in the center portion of the target body, a region within 5 mm from the peripheral portion of the target body, and a peripheral portion on the side of the target body are sandblasted. Areas outside these areas are masked to protect them from sandblasting.

The blasting treatment conditions are as follows.

‧Blasting material: SiC particles with a particle size of 100 to 300 μm.

‧ Distance between the target body and the nozzle: 150mm

‧Air pressure: 4.5kg/cm ²

After the blasting treatment, the air is sprayed to remove the blast material on the surface of the target body (including the side peripheral surface), and then the target body is ultrasonically washed. In this step, the pure water washing liquid was circulated by pumping (250 kPa) to form a jet stream, and at the same time, ultrasonic cleaning at 19 kHz was performed for 5 minutes. Next, the target of the ultrasonic cleaning target was immersed in a 3% fluoric acid 10% nitric acid aqueous solution for 3 minutes, and then washed with water and washed with hot water to remove the acid adhering to the target body. Then, the mask was removed, and the pure water washing liquid was circulated by pumping (250 kPa) to form a jet stream. At the same time, ultrasonic cleaning was performed for 19 minutes at 19 kHz, and then the target body was pulled from the washing tank to be dried.

Next, the sputtering target manufactured by the multi-stage cleaning treatment as above was evaluated in the following order.

First, the surface roughness of the blast-treated area of the target was measured by a measuring machine. As a result, the surface roughness was Ra = 2.5 μm. Next, the blasting area of the target was observed with a metal microscope, and the number of residual blast materials was measured. As a result, the number of the substantially circular diameter of 10 μm or more was one per 1 cm ² . Further, the target is bonded to the target holder to form a sputtering cathode. Thus, the sputter cathode was assembled into a magnetron sputtering apparatus for sputtering test to observe the occurrence of particles in the film. The results of the evaluation are shown in Table 1.

The sputtering conditions are as follows.

‧ Gas and pressure: Ar gas, 0.5Pa

‧Electricity: 7kW,

‧ Film thickness: 500Å (Angstrom).

The sputter film was formed on a 5 inch Si wafer. The particle system counts the size of 0.2 μm or more in the film. The number of particles is the average of the respective count values of the batches of 10, 20, 30, 40, 50, 60, 70, 80, 90 and 100. As a result of the measurement, the average number of particles on a 5-inch wafer was two. At the same time, the number of occurrences of the number of sudden particles whose number is more than 2 times the average value is 0 times.

(Example 2)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the air pressure of the blast material was 4.1 kg/cm ² . Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 1.2 μm, the average number of residual blast materials was 1 per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 1 time.

(Example 3)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the particle size of the blast material was 200 to 400 μm, the air pressure was 4.9 kg/cm ² , and the etching time was 2 minutes. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 3.8 μm, the average number of residual blast materials was ² per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 1 time.

(Example 4)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the particle size of the blast material was 200 to 400 μm, the air pressure was 4.7 kg/cm ² , and the etching time was 2 minutes. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 3.5 μm, the average number of residual blast materials was 3 per 1 cm ² , the average number of particles was one, and the number of occurrences of the sudden particles was 0.

(Example 5)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the target body material was made of aluminum and the air pressure of the blast material was 4.6 kg/cm ² . Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.8 μm, the average number of residual blast materials was 1 per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 0.

(Example 6)

After the blasting treatment, instead of the etching treatment, high-pressure water washing was performed at a discharge pressure of 200 kgf/cm ² and a water amount of 20 liters/min, and the sputtering target was produced under the same cleaning treatment conditions as in Example 1. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.1 μm, the average number of residual blast materials was 1 per 1 cm ² , the average number of particles was 3, and the number of occurrences of the sudden particles was 0.

(Example 7)

Except that the blast material particle diameter of 200 to 400 m, an air pressure of 4.7kg / cm ^2, the discharge pressure of the high pressure water wash was 250kgf / cm ^2, the rest lines the same as in Example 6 of the sputter cleaning process conditions of manufacture target. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 3.5 μm, the average number of residual blast materials was 4 per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 0.

(Example 8)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the target body material was made of copper and the blasting material had an air pressure of 4.3 kg/cm ² and an etching time of 2 minutes. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.0 μm, the average number of residual blast materials was ² per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 0.

(Example 9)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the target body material was made of nickel, the blast material had a particle diameter of 200 to 400 μm, and the air pressure was 4.3 kg/cm ² . Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 3.0 μm, and the average number of residual blast materials was ² per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 0.

(Embodiment 10)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the target body material was made of cobalt and the blasting material had an air pressure of 4.3 kg/cm ² and an etching time of 2 minutes. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.3 μm, the average number of residual blast materials was 1 per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 1 time.

(Example 11)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the target body material was 钽 and the air pressure of the blast material was 4.3 kg/cm ² . Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.5 μm, the average number of residual blast materials was 3 per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 0.

(Embodiment 12)

The air pressure of the target body is made of gold and the blasting material is 4.3 kg/cm ² , and after the blasting treatment, instead of the etching treatment, the high pressure water is washed at a discharge pressure of 200 kgf/cm ² and a water volume of 20 liters/min. A sputtering target was produced under the same cleaning treatment conditions as in Example 1. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.5 μm, the average number of residual blast materials was ² per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 0.

(Example 13)

The target body material was made of silver, and after the blasting treatment, instead of the etching treatment, high-pressure water washing was performed at a discharge pressure of 200 kgf/cm ² and a water amount of 20 liters/min, and the rest was produced under the same cleaning treatment conditions as in Example 1. Sputter target. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 3.0 μm, the average number of residual blast materials was ² per 1 cm ² , the average number of particles was 3, and the number of occurrences of the sudden particles was 0.

(Example 14)

Except that the target body is made of chromium and the blasting material has an air pressure of 4.3 kg/cm ² , after the blasting treatment, instead of the etching treatment, the high pressure water is washed at a discharge pressure of 200 kgf/cm ² and a water volume of 20 liters/min. A sputtering target was produced under the same cleaning treatment conditions as in Example 1. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.8 μm, the average number of residual blast materials was 1 per 1 cm ² , the average number of particles was 2, and the number of occurrences of the sudden particles was 1 time.

(Example 15)

In addition to making the target body material 铌, the air pressure of the blasting material is 4.3 kg/cm ² , after the blasting treatment, instead of the etching treatment, the high pressure water cleaning is performed at a discharge pressure of 200 kgf/cm ² and a water volume of 20 liters/min. A sputtering target was produced under the same cleaning treatment conditions as in Example 1. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.5 μm, the average number of residual blast materials was 1 per cm ² , the average number of particles was 1, and the number of occurrences of the sudden particles was 0.

(Embodiment 16)

Except that the target body material is made of platinum and the blasting material has an air pressure of 4.3 kg/cm ² , after the blasting treatment, instead of the etching treatment, the high pressure water is washed at a discharge pressure of 200 kgf/cm ² and a water volume of 20 liters/min. A sputtering target was produced under the same cleaning treatment conditions as in Example 1. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.5 μm, the average number of residual blast materials was 3 per 1 cm ² , the average number of particles was 1, and the number of occurrences of the sudden particles was 0.

(Example 17)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the target body material was made of molybdenum and the blasting material had an air pressure of 4.3 kg/cm ² . Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.3 μm, the average number of residual blast materials was ² per 1 cm ² , the average number of particles was 1, and the number of occurrences of the sudden particles was 0.

(Embodiment 18)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the target body material was tungsten, the blast material had a particle diameter of 200 to 400 μm, and the air pressure was 4.3 kg/cm ² . Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1. The surface roughness was Ra = 2.7 μm, the average number of residual blasting materials was ² per 1 cm ² , the average number of particles was one, and the number of occurrences of the sudden particles was 0.

(Comparative Example 1)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the particle size of the blast material was 300 to 500 μm and the air pressure was 5.3 kg/cm ² . Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 2. The surface roughness was Ra = 4.8 μm, the average number of residual blast materials was ² per 1 cm ² , the average number of particles was 10, and the number of occurrences of the sudden particles was 4 times.

(Comparative Example 2)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the particle size of the blast material was 300 to 500 μm and the air pressure was 4.6 kg/cm ² . Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 2. The surface roughness was Ra = 4.5 μm, the average number of residual blast materials was 1 per cm ² , the average number of particles was 12, and the number of occurrences of the sudden particles was 4 times.

(Comparative Example 3)

A sputtering target was produced under the same cleaning treatment conditions as in Example 1 except that the air pressure of the blast material was 4.1 kg/cm ² and the etching time was 1 minute. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 2. The surface roughness was Ra = 1.2 μm, the average number of residual blast materials was 8 per 1 cm ² , the average number of particles was 12, and the number of occurrences of the sudden particles was 3 times.

(Comparative Example 4)

The sputtering target was produced under the same cleaning conditions as in Example 1 except that the particle size of the blast material was 200 to 400 μm, and after the blasting treatment, the etching treatment was performed without performing the etching treatment. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 2. The surface roughness was Ra = 3.5 μm, the average number of residual blast materials was 15 per 1 cm ² , the average number of particles was 15, and the number of occurrences of the sudden particles was 4 times.

(Comparative Example 5)

After the blasting treatment is not performed, the titanium target body is produced, and only ultrasonic cleaning is performed. The processing conditions of the ultrasonic cleaning were the same as those in the first embodiment. The evaluation results are shown in Table 2. The surface roughness of Ra = 0.5μm, the average number of residual blasting material per 1cm ² 0, and the number average particle of 13, the number of occurrences of sudden particle is four.

(Comparative Example 6)

Except that the particle size of the sandblasting material is 200 to 400 μm, the air pressure is 4.6 kg/cm ² , and the ultrasonic wave frequency of the ultrasonic cleaning after the sandblasting is ultrasonic cleaning and etching is 30 kHz, respectively. A sputtering target was produced under the same cleaning treatment conditions as in Example 1. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 2. The surface roughness was Ra = 3.2 μm, the average number of residual blast materials was 9 per 1 cm ² , the average number of particles was 10, and the number of occurrences of the sudden particles was 4 times.

(Comparative Example 7)

In addition to the air pressure of the blasting material is 4.4 kg/cm ² , the ultrasonic frequency of the ultrasonic cleaning after the blasting treatment is 30 kHz, instead of the etching treatment, the high pressure water is performed at a discharge pressure of 250 kgf/cm ² and a water volume of 20 liters/min. The sputtering target was produced by the same cleaning treatment conditions as in Example 1 except that the ultrasonic wave frequency of the ultrasonic cleaning after the high-pressure water washing was performed was 30 kHz. Thereafter, the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 2. The surface roughness was Ra = 2.1 μm, the average number of residual blast materials was 9 per 1 cm ² , the average number of particles was 10, and the number of occurrences of the sudden particles was 3 times.

1‧‧‧Vacuum exhaust piping

2‧‧‧ gas piping

3‧‧‧vacuum tank

4‧‧‧ Sputtered cathode

5‧‧‧Support table

6‧‧‧ Target (sputter target)

6a‧‧‧Erosion area

6b‧‧‧Non-eroded areas

7‧‧‧ Target

8‧‧‧Insulation board

9‧‧‧Frame

10‧‧‧ Grounding shield

11‧‧‧Y yoke

12a, 12b‧‧‧ magnet

13‧‧‧cleaning tank

14‧‧‧cleaning solution

15‧‧‧ pump

16‧‧‧Pipe

17‧‧‧Supersonic oscillator

20‧‧‧ Sputtering device

60‧‧‧ target body

S‧‧‧Substrate

Fig. 1 is a schematic view showing the configuration of a sputtering apparatus according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view schematically showing a sputtering target according to an embodiment of the present invention.

Fig. 3 is a flow chart showing the steps of a method for producing a sputtering target and a cleaning method according to an embodiment of the present invention.

Fig. 4 is a schematic view showing the configuration of an ultrasonic cleaning device for a target body in an embodiment of the present invention.

Claims (12)

A method for manufacturing a sputtering target, which is a method for manufacturing a sputtering target for a magnetron sputtering device, characterized in that a target body is prepared, a non-erosion region of a surface of the target body is sandblasted, and the non-erosion cleaning is performed by ultrasonic cleaning. The region is etched by the aforementioned non-erosive region which has been ultrasonically cleaned, or is sprayed and cleaned with a cleaning liquid, and the non-eroded area is ultrasonically cleaned again. The method for producing a sputtering target according to the first aspect of the invention, wherein the step of blasting the surface of the non-erosion region is roughened to a surface roughness (Ra) of 1 μm or more and 4 μm or less. The method for manufacturing a sputtering target according to the second aspect of the invention, wherein the step of ultrasonically cleaning the non-erosive region is performed by cleaning a jet of ultrasonic cleaning liquid having a frequency of 18 kHz or more and 19 kHz or less. region. A method for producing a sputtering target according to claim 3, wherein the pressure of the jet flow is 200 kPa or more and 300 kPa or less. A cleaning method for a sputtering target, which is a method for cleaning a sputtering target which is subjected to sandblasting on at least a part of a surface, characterized in that: ultrasonically cleaning the blasting area of the sputtering target, and etching by the ultrasonic cleaning The blasting treatment area is passed through, or the cleaning liquid is used for jet cleaning, and the blasting treatment area is again ultrasonically cleaned. The method for cleaning a sputtering target according to the fifth aspect of the invention, wherein the step of ultrasonically cleaning the sandblasting treatment region is performed by cleaning a jetting treatment region by applying a jet of a cleaning liquid having an ultrasonic wave of 18 kHz or more and 19 kHz or less. . The method of cleaning a sputtering target according to the sixth aspect of the invention, wherein the pressure of the jet flow is 200 kPa or more and 300 kPa or less. A sputtering target, which is a sputtering target for a magnetron sputtering device, comprising: a target body; an erosion region constituting a part of a surface of the target body and being eroded by sputtering; and constituting the target The other part of the surface of the material body has a surface roughness (Ra) of 1 μm or more and 4 μm or less, and the number of the sandblasting materials having a diameter of 10 μm or more is a non-erodible area of 4 or less per square centimeter. The sputtering target of claim 8, wherein the non-erosion area includes a side surface of the target body. A sputtering target according to the eighth aspect of the invention, wherein the target body is made of a metal element or an alloy containing the metal element as a main component. The sputtering target of claim 10, wherein the metal element is titanium, aluminum, copper, nickel, cobalt, rhodium, gold, silver, chromium, rhodium, platinum, molybdenum or tungsten. A sputtering device is provided with: a vacuum chamber; a substrate supporting table disposed inside the vacuum chamber; the sputtering target having: a target body disposed opposite to the substrate supporting table; and a portion of the surface of the target body and being sputtered The erosion-eroded area; and the other part constituting the surface of the target body, and having a surface roughness (Ra) of 1 μm or more and 4 μm or less, and the number of the blasting materials having a diameter of 10 μm or more is 4 per 1 cm 2 . The non-eroded area below; and a magnetic flux loop that forms a magnetic field distribution on the surface of the sputtering target.