CN101509127A - Method for manufacturing sputtering target, method for cleaning sputtering target, sputtering target and sputtering device - Google Patents
Method for manufacturing sputtering target, method for cleaning sputtering target, sputtering target and sputtering device Download PDFInfo
- Publication number
- CN101509127A CN101509127A CNA2009100074428A CN200910007442A CN101509127A CN 101509127 A CN101509127 A CN 101509127A CN A2009100074428 A CNA2009100074428 A CN A2009100074428A CN 200910007442 A CN200910007442 A CN 200910007442A CN 101509127 A CN101509127 A CN 101509127A
- Authority
- CN
- China
- Prior art keywords
- target
- sputtering target
- zone
- sputtering
- corrosive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a sputtering target producing method capable of reducing occurrence of gusty particle and improving the producing efficiency of membranous and film. The producing method of the invention refers to a method for producing sputtering target for a magnetron sputtering device, comprising: preparing a target body; processing non-corrosive area on the surface of the target body in ejection way; washing the non-corrosive area by ultrasonic wave; etching or washing the non-corrosive area washed by ultrasonic wave using washing liquid; and rewashing the non-corrosive area by ultrasonic wave.
Description
Technical field
The manufacture method of the sputtering target of the generation of the particle that the present invention relates to suppress to result from adhering to of sputter thing and take place, washing methods, sputtering target and the sputter equipment of sputtering target.
Background technology
One of film of high-test metal film has magnetron sputtering method.Sputtering method roughly say so the plasma that generates argon gas in a vacuum, make that argon (Ar) bombardment by ions is fixed on target on the cathode electrode, the sputtering particle of the constituting atom that contains target that will disperse from the surface of target is deposited in as the film on the substrate of film forming object.Magnetron sputtering method is also to form magnetic field on the surface of target, seeks the film of film forming speed high speed to generate high-density plasma near target.
Usually, target is bonded in as on the backboard of cathode electrode.In magnetron sputtering method, will be used for forming the permanent magnet in magnetic field or the dorsal part that electro-magnet is configured in backboard on the target surface.Typical way is, according to comparing, make the big distributed magnet like that in magnetic field of the middle portion of centre portions and peripheral part with peripheral part with the centre portions of target.At this moment, sputtering yield is at the region intermediate height of target, and is little at the centre portions and the peripheral part of target.The erosion action that the zone lower than sputtering yield, the zone that sputtering yield is high is subjected to is big.Usually, if the zone that sputtering yield is high is called corrosion area (erosion areas), then can be called non-corrosive zone (non-erosion areas) (with reference to patent documentation 1) in the zone that sputtering yield is low.
In this magnetron sputtering method, the sputtering particle that is come by corrosion area is deposited on the substrate and forms film.On the other hand, the part of its sputtering particle also is deposited on the non-corrosive zone on target surface.At this moment, the stores on the non-corrosive zone is followed the carrying out of sputter and thickness increases, because of self internal stress from the target sur-face peeling.When the stores of target sur-face peeling is sneaked into the film that substrate forms as foreign matter (particle), cause serious quality bad sometimes.
(also claim to sandblast, blast) processing makes the method for the non-corrosive regional asperitiesization of target with the adaptation of raising stores by spraying as the countermeasure proposition that addresses this problem.For example, but patent documentation 2 put down in writing inject process target surface and increased the quantity-produced lot number.More effective hardness, the particle diameter of the blasting materials when in addition, patent documentation 3 discloses inject process target surface.
Patent documentation 1: the spy opens flat 7-90576 communique
Patent documentation 2: the spy opens flat 4-301074 communique
Patent documentation 3: the spy opens flat 7-316804 communique
But when the non-corrosive zone of an inject process target, existence can not fully suppress the problem of stores from the target sur-face peeling.
That is to say, by inject process to the target surface, though suppressed the generation of having peeled off, reduced normal particle, but there is the adaptation instability on stores and target surface, the situation of the particle of volume takes place for burst ground repeatedly attached to the stores on target surface.Thereby and exist particle that this burst takes place to the membranous problem that has great effect to reduce qualification rate.
Summary of the invention
In view of above situation, the objective of the invention is to, the generation of the particle that can reduce burst, the manufacture method that realizes the sputtering target of membranous and the raising of thin film fabrication efficient, washing methods, sputtering target and the sputter equipment of sputtering target are provided.
When solving above problem, what the inventor studied with keen determination found that, the particle of the volume that burst ground takes place is to cause owing to peeling off attached to the stores on the blasting materials that residues in the target surface, thereby has finished the present invention.
That is to say, the manufacture method of sputtering target of the present invention is the manufacture method of magnetic controlled tube sputtering apparatus with sputtering target, prepare the target body, the non-corrosive zone of the described target body surface of inject process, the described non-corrosive zone of ultrasonic washing, the described non-corrosive zone that the described ultrasonic washing of etching is crossed or use the washings hydro-peening, the described non-corrosive zone of ultrasonic washing once more.
In the present invention, after the non-corrosive zone of inject process target body surface (inject process zone), the surface of at first washing the target body by ultrasonic washing.By this, can remove in the blasting materials that remains in non-corrosive zone for the more weak blasting materials of the sticking power of target body.
Here, so-called " non-corrosive zone " is meant the corrosion area zone in addition that sputtering target of the present invention shows when reality is used.Also be same in the following description.Non-corrosive zone is not only limited to the surface portion that belongs to described corrosion area of sputtering target, also comprises the side of sputtering target.
Then, the non-corrosive zone crossed of etching or hydro-peening ultrasonic washing.This operation is dissolved by the boundary member that is made blasting materials and target body by etch processes or on a small quantity by being given the impact of blasting materials with physics by hydro-peening, and the blasting materials that remains in non-corrosive zone and the sticking power between the target body are weakened.
Thereafter, the non-corrosive zone of ultrasonic washing once more.By this, can easily remove the blasting materials that weakens for target body sticking power.
By above a series of processing, improve owing to remain in the efficient of removing of the blasting materials on the non-corrosive zone of target body, so can obtain having the sputtering target in the non-corrosive zone of clean surface state.By this, the generation of the particle of the volume of the burst of the blasting materials that can suppress to result to remain in non-corrosive zone forms stable film formation process and high-quality sputtered film.
In the present invention, the operation of described inject process makes the surfaceness in described non-corrosive zone (arithmetic mean surface roughness: Ra) asperitiesization is to 4 μ m more than the 1 μ m.This is because Ra when being lower than 1 μ m, the effect that does not produce almost by inject process, and Ra is when surpassing 4 μ m, and the height difference on target surface is excessive, and the adaptation of stores reduces.
In the present invention, the operation in the described non-corrosive zone of ultrasonic washing is washed described non-corrosive zone with the jet of hyperacoustic washings of adding the frequency below the above 19kHz of 18kHz.This is owing to added hyperacoustic washings of described range of frequency, causes the washing effect height by cavitation erosion.
In addition, sputtering target washing methods of the present invention is a sputtering target washing methods of at least a portion on surface having been implemented inject process, the inject process zone of the described sputtering target of ultrasonic washing, the described inject process zone that the described ultrasonic washing of etching is crossed or use washings hydro-peening, the described inject process of ultrasonic washing zone once more.
Possess according to above such sputtering target of making or washing:
The target body,
The corrosion area that constitutes the part on the surface of described target body, is etched by sputter and
Other a part, the surfaceness (Ra) that constitutes described target body surface be the above 4 μ m of 1 μ m following and also per 1 square centimeter in the number of blasting materials more than the diameter 10 μ m suitable with circle in the non-corrosive zone below 4.
In sputtering target of the present invention, the non-corrosive zone of injected processing asperitiesization has clean condition of surface.By this, the generation of the particle of the volume of the burst of the blasting materials that can suppress to result to remain in non-corrosive zone forms stable film formation process and high-quality sputtered film.
In the present invention, the constituent material of target body comprises metallic element or with its alloy as principal constituent.Can enumerate titanium (Ti), aluminium (Al), copper (Cu), nickel (Ni), cobalt (Co), tantalum (Ta), gold (Au), silver (Ag), chromium (Cr), niobium (Nb), platinum (Pt), molybdenum (Mo), tungsten (W) as metallic substance.Unqualified to this.
On the other hand, sputter equipment of the present invention possesses vacuum tank, the substrate that is arranged on described vacuum tank inside is supported platform, support the sputtering target of platform subtend configuration with described substrate and form the magnetic circuit of Distribution of Magnetic Field on the surface of described sputtering target; This sputtering target has: the target body, corrosion area that constitutes the part on the surface of described target body, is etched by sputter and other a part, the surfaceness (Ra) that constitutes described target body surface be the above 4 μ m of 1 μ m following and also per 1 square centimeter in the number of blasting materials more than the diameter 10 μ m suitable with circle in the non-corrosive zone below 4.
In sputter equipment of the present invention, the non-corrosive zone of sputtering target has clean condition of surface.By this, the generation of the particle of the volume of the burst of the blasting materials that can suppress to result to remain in non-corrosive zone forms stable film formation process and high-quality sputtered film.
Such as mentioned above, according to the present invention, the generation of the particle of the volume of the burst of the blasting materials that can suppress to result to remain in non-corrosive zone.By this, can form stable film formation process and high-quality sputtered film.
Description of drawings
Fig. 1 is the summary pie graph of sputter equipment according to the embodiment of the present invention.
Fig. 2 is a stereographic map of roughly representing sputtering target according to the embodiment of the present invention.
Fig. 3 is that explanation is according to the sputtering target manufacture method of embodiment of the present invention or the process flow chart of washing methods.
Fig. 4 is the summary pie graph of the informed later of the target body in the embodiment of the present invention.
Fig. 5 is the chart of the experimental result of the expression embodiment of the invention.
Fig. 6 is the chart of the experimental result of expression comparative example of the present invention.
1 Vacuum exhaust tube
2 flues
3 vacuum tanks
4 sputter cathodes
5 support platform
6 targets (sputtering target)
The 6a corrosion area
The non-corrosive zone of 6b
7 backboards
8 insulcretes
9 frameworks
10 ground(ed) shields
11 yokes [ヨ-Network (yoke)]
12a, 12b magnet
13 rinse baths
14 washingss
15 pumps
16 pipes
17 ultrasonic oscillators
20 sputter equipments
60 target bodies
The S substrate
Embodiment
Following with reference to the description of drawings embodiment of the present invention.In addition, the present invention is unqualified to following embodiment, according to technological thought of the present invention all distortion can be arranged.
Fig. 1 is the summary pie graph according to the sputter equipment 20 of the Magnetron Mode of embodiment of the present invention.The sputter equipment 20 of present embodiment has the vacuum tank 3 of establishing Vacuum exhaust tube 1 and flue 2.Vacuum pump (diagram slightly) is connected with Vacuum exhaust tube 1.Flue 2 is to the inside of vacuum tank 3 importing process (process) gas (rare gas element of hydrogen, oxygen or nitrogen, argon etc., reactant gases etc.).The inside of vacuum tank 3 be provided with sputter cathode 4 and with the position of its subtend on be used to support the support platform 5 of the substrate S of semiconductor wafer or glass substrate etc.Vacuum tank 3 is connected with ground potential with support platform 5.
Sputter cathode 4 has sputtering target (following also be called for short " target ") 6, backboard 7, insulcrete 8, framework 9 and ground(ed) shield 10.
The face with target 6 opposition sides at backboard 7 is the magnetic circuit 21 that is provided for forming Distribution of Magnetic Field on the rear side on the surface of target 6.This magnetic circuit 21 by yoke 11, be configured in annular permanent magnnet 12a on the yoke 11, the bar-shaped permanent magnet 12b that is configured in its central authorities constitutes.Magnet 12a and magnet 12b with respect to backboard 7 with the pole pair of mutual dissimilar polarity to and dispose.Its result forms magnetic line of force M shown in Figure 1 on the surface of target 6.In this example, on the central part of the target 6 of magnet 12a and 12b institute subtend and the region intermediate between the periphery, form the magnetic field surperficial parallel with target.
Be situated between by flue 2 to the inside of the vacuum tank 3 that is vented to specified vacuum degree importing argon gas by the above sputter equipment that constitutes 10.On backboard 7, apply the high-voltage or the high-frequency electrical of regulation negative potential, by this, between target 6 and support platform 5, form argon plasma.Argon ion is emitted the atomic particle (sputtering particle) of the constituent material that contains target 6 with the surface of high speed impact target 6.On the surface of sputtering particle that emits by target 6 surfaces, form film attached to the substrate S of subtend.
In addition, with the surperficial parallel magnetic field composition of target 6 in the frequency of impact of the ar atmo that produces by secondary electron be enhanced.By this, can improve plasma density, improve the sputtering yield of target 6, realize the high speed of film forming speed.
According to the plasma density distribution on target 6 surfaces, to compare with peripheral part with the centre portions on target 6 surfaces, the plasma density of their middle portion raises.The sputtering yield height of target 6 is compared in the zone that the high zone of plasma density and plasma density are low.Therefore, as shown in Figure 2, on the surface of target 6, form high corrosion area 6a and the low non-corrosive regional 6b of sputtering yield of sputtering yield.Non-corrosive regional 6b on the position corresponding with the centre portions on the surface of target 6 and periphery, corrosion area 6a forms on the position corresponding with the middle portion of target 6 (Fig. 2 grid part) annularly.
In this magnetron sputtering method, be deposited in substrate S by sputtering particle and upward form film from corrosion area 6a.On the other hand, the part of this sputtering particle also is deposited on the non-corrosive regional 6b on target surface.At this moment, be accompanied by the carrying out of sputter, the thickness of the stores on the non-corrosive regional 6b increases, because of self internal stress from the target sur-face peeling.When the stores of target sur-face peeling is sneaked into the film that substrate S forms as foreign matter (particle), can cause serious quality condition of poor to take place.
In order to prevent this problem, the method that the stores that makes the non-corrosive regional asperitiesization of target 6 suppress sputtering particle by inject process is peeled off is effective.But, though can reduce the occurrence frequency of particle, the but generation of the particle that can not suppress to happen suddenly by the inject process in non-corrosive zone.According to the inventor's opinion, its reason is, has taken place to peel off attached to the stores on the blasting materials that residues in non-corrosive zone.
Therefore, in the present embodiment, do one's utmost to get rid of the blasting materials that remains in the target surface, avoid the generation of the particle that happens suddenly, realize that high-quality film forms.The manufacture method of the target that is undertaken by embodiment of the present invention below is described.
Fig. 3 is the process flow chart of the manufacture method of explanation target.The manufacture method of the target of present embodiment has: the operation (ST3) and the operation in the non-corrosive zone of ultrasonic washing (ST4) once more in operation (ST2), non-corrosive zone that the etching ultrasonic washing is crossed in operation (ST1), non-corrosive zone that the ultrasonic washing inject process is crossed in non-corrosive zone of preparing operation, the inject process target body surface of target body.
[preparatory process of target body]
At first, prepare the target body of prescribed level, thickness.The shape of target body can be used the shape of geometry arbitrarily of circle, ellipse, long hole shape, square, rectangle etc.The target body constitutes by metallic element or with its molding or sintered compact as the alloy of principal constituent.Can enumerate titanium (Ti), aluminium (Al), copper (Cu), nickel (Ni), cobalt (Co), tantalum (Ta), gold (Au), silver (Ag), chromium (Cr), niobium (Nb), platinum (Pt), molybdenum (Mo), tungsten (W) as metallic element, but unqualified to it.
[inject process operation (ST1)]
In this operation, make the target body by inject process with corresponding zone, non-corrosive zone (following simply be called " non-corrosive zone ") asperitiesization.By shelter the target body with the protecting materials of photo-resist etc., other mask material in advance with the corresponding zone of corrosion area (being designated hereinafter simply as " corrosion area ") the non-corrosive zone of inject process selectively.Below, the non-corrosive zone that this inject process is crossed is called " inject process zone ".The inject process zone is not limited to the surface of target 6, also comprises its lateral circle surface.
Surfaceness (the arithmetic mean surface roughness: for example be below the above 4 μ m of 1 μ m Ra) that the result of inject process operation is resulting processed.This be because, when Ra is lower than 1 μ m, the effect that does not produce almost, and Ra is when surpassing 4 μ m by inject process, the height difference on target surface is excessive, the adaptation of stores reduces.Particle diameter, spraying pressure, treatment time by blasting materials wait the adjustment sheet surface roughness.Material and purposes according to target are selected blasting materials from SiC, granulated glass sphere, aluminum oxide etc.
Because of the part of the injected blasting materials of inject process is adhered to or to lunge inject process zone etc. residual.After the inject process, have by blowing the blasting materials that air can be removed, but the high blasting materials of adhesion strength is residual same as before to the inject process zone.
The method of removing the blasting materials that remains in the inject process zone has ultrasonic washing.But the experiment according to the inventor can be distinguished, only uses this ultrasonic washing, remain in the inject process zone blasting materials to remove effect low.That is to say, can confirm, during with the ultrasonic washing of frequency 30～50kHz, adhere to or anchor at the inject process zone lip-deep blasting materials remove the effect height, relative therewith, the blasting materials that lunges the interior surface in inject process zone still can not be removed and continue residual.And find that be deposited in film on this residual blasting materials and compare easily with the lip-deep film that directly is deposited in the target body that inject process crosses and peel off, this becomes the reason that the burst particle takes place.
Therefore, in the present embodiment,, can obtain the high sputtering target of less residue, cleanliness factor of blasting materials according to following such inject process zone of washing.
[ultrasonic washing operation (ST2)]
This operation is the inject process zone of ultrasonic washing target body.In this operation, wash this inject process zone with the jet that adds hyperacoustic washings.Frequency of ultrasonic is because of the scope below the high above 19kHz of 18kHz of the washing effect of bringing of cavitation erosion.
Fig. 4 represents that the summary of washing device used in the target body ultrasonic washing operation constitutes.In this embodiment, target body 60 is immersed in the washings 14 in the rinse bath 13,, by means of pipe 16 washings 14 is circulated with the driving of pump 15 with ultrasonic oscillator 17 these rinse baths 13 of vibration.And the inject process zone of washing target body 60 with the jet that is sent to the washings 14 in the rinse bath 13.
In this operation, the shockwave of the cavitation erosion that takes place during by the jet flow of washings 14 and low-frequency ultrasonic waves washing can remove attachment removal or anchor at residual blasting materials on the inject process zone of target body 60, gives the impact with physics of the residual blasting materials that lunges the inject process zone.
[etch processes operation (ST3)]
Then, etching is carried out in the inject process zone that ultrasonic washing is crossed.Wet etching is used in etching.According to the suitable selection etching solutions such as constituent material of blasting materials and target body, using suitable acid or alkali is the aqueous solution.Treatment process can be used the method for pickling process, coating method etc.In the present embodiment, the target body is immersed in comes etching inject process zone in the fluorine aqueous nitric acid.There is no particular limitation for the treatment time, and the degree of big variation does not take place the surface roughness that still is taken as the regulation that makes the inject process zone.After the etching, wash with water or hot water wash washing target body.
This operation melts the blasting materials that lunges the target body surface and the boundary member between the target body on a small quantity, blasting materials is embedded with respect to the physics of target body weaken.By this, can remove inexpungible residual blasting materials in the ultrasonic washing operation of front, blasting materials is weakened with respect to the sticking power of target body.
In addition, by also obtaining the effect same with the effect of etch processes to inject process zone winding-up high pressure water.Therefore, also can adopt the hydro-peening washing procedure that is undertaken by the high pressure washings to replace described etch processes operation.At this moment, specifically, can use 200～300kgf/cm
2, the water yield 20～30L/min high pressure water.
[ultrasonic washing operation (ST4)]
At last, ultrasonic washing inject process zone again.In this operation, can adopt and above-mentioned the 1st time same treatment condition of ultrasonic washing operation (ST2).That is, use washing device shown in Figure 4, make the jet washing inject process zone that has added hyperacoustic washings below the above 19kHz of frequency 18kHz with the pressure of 200～300kPa.
Can efficient remove by previous etch processes operation (perhaps utilizing the hydro-peening operation of high-pressure wash water) the lax residual blasting materials of insertion force well by this operation to the physics of target body surface.Its result can remove the blasting materials that substantially all remains in the inject process zone.
In addition, this ultrasonic washing operation both can be implemented under the state of removing the mask material that covers the target body surface, also can implement not removing under the mask material.When implementing this ultrasonic washing operation under removing the state of mask material, mask material can be removed behind etching work procedure (ST3).
As mentioned above, according to present embodiment, after inject process,, can efficient remove the blasting materials in the inject process zone that remains in the target body surface well by the rapid washing procedure of the multistep that constitutes by the 1st ultrasonic washing, etching (perhaps hydro-peening washing) and the 2nd ultrasonic washing.
Can make sputtering target 6 like this according to above, this sputtering target 6 possesses: target body 60, corrosion area that constitutes the part on the surface of target body 60, is etched by sputter and other a part, the surfaceness (Ra) that constitutes target body 60 surfaces be the above 4 μ m of 1 μ m following and also per 1 square centimeter in the number of blasting materials more than the diameter 10 μ m suitable with circle in the non-corrosive zone below 4.
Because the target 6 of present embodiment, the surfaceness of its non-corrosive regional 6b forms in the scope below the 4 μ m more than 1 μ m, so can improve the adaptation with the sputter thing, suppresses peeling off of this sputter thing.In addition, owing to be suppressed at below 4 with the number of justifying the blasting materials more than the suitable diameter 10 μ m in can will per 1 square centimeter, so can reduce significantly by occurrence frequency attached to the particle of the volume of peeling off the burst that causes of the sputter thing on the residual blasting materials.By this, can form stable film formation process and high-quality sputtered film.
Embodiment
Embodiments of the invention below are described, but the invention is not restricted to following embodiment.
(embodiment 1)
Prepare the target body of titanium (purity 5N) round of diameter 250mm, thickness 6mm.And the following zone of the diameter 30mm of inject process target body central part, apart from the side perimembranous of target body periphery 5mm with interior zone and target body.Shelter in zone beyond these zones, is not subjected to the influence of inject process.
The inject process condition is as follows:
Blasting materials: the SiC particle of particle diameter 100～300 μ m
Distance between target body and nozzle: 150mm
Air pressure: 4.5kg/cm
2
The air of jetting after the inject process, remove the target body surface blasting materials of (comprising lateral circle surface) after, ultrasonic washing target body.In this operation, make the circulation of pure water washings as jet with pump (250kPa), carry out the ultrasonic washing of 5 minutes 19kHz simultaneously.The target body of then ultrasonic washing being crossed was immersed in the aqueous solution that contains 3% hydrofluoric acid (volume ratio) and 10% nitric acid (volume ratio) after 3 minutes, washed and hot water wash, removed attached to the acid on the target body.Then, remove mask, with pump (250kPa) make pure water washings circulation as jet, simultaneously carry out the ultrasonic washing of 5 minutes 19kHz after, the target body is mentioned from rinse bath, carry out drying treatment.
Then, estimate the sputtering target of making through the rapid carrying out washing treatment of above such multistep in the following order.
At first, measure the surfaceness in the inject process zone of target with the mensuration machine.Surface roughness Ra=2.5 μ m consequently.Then, with the inject process zone of metallography microscope sem observation target, the number of the residual blasting materials of instrumentation.Consequently, every 1cm
2In with number more than the suitable diameter 10 μ m of circle on average be 1.In addition, this target is engaged with backboard and constitute sputter cathode.And this sputter cathode is assembled in carries out sputter test in the magnetic controlled tube sputtering apparatus, observe the situation occurred of particle in the film.Evaluation result is shown in Fig. 5.
Sputtering condition is as follows:
Gas and pressure: Ar gas, 0.5Pa
Power: 7kW
Thickness:
(dust)
Sputtered film forms on 5 inches Si wafer.Particle to size more than the 0.2 μ m in the film is counted, and population is taken as the mean value of each count value of the 10th, 20,30,40,50,60,70,80,90 and 100 batch.The result who measures is, the number average particle on 5 inches wafers is 2.In addition, counting is that the frequency of particle of the burst of the number of mean value more than 2 times is 0 time.
(embodiment 2)
Except the air pressure with blasting materials is taken as 4.1kg/cm
2In addition, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=1.2 μ m, the every 1cm of the mean number of residual blasting materials
2Be 1, number average particle is 2, and the particle frequency of burst is 1 time.
(embodiment 3)
Except the particle diameter with blasting materials is taken as 200～400 μ m, air pressure is taken as 4.9kg/cm
2, beyond etching period was taken as 2 minutes, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=3.8 μ m, the every 1cm of the mean number of residual blasting materials
2Be 2, number average particle is 2, and the particle frequency of burst is 1 time.
(embodiment 4)
Except the particle diameter with blasting materials is taken as 200～400 μ m, air pressure is taken as 4.7kg/cm
2, beyond etching period was taken as 2 minutes, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=3.5 μ m, the every 1cm of the mean number of residual blasting materials
2Be 3, number average particle is 1, and the particle frequency of burst is 0 time.
(embodiment 5)
The air pressure that is taken as aluminium, blasting materials except the material with the target body is taken as 4.6kg/cm
2In addition, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.8 μ m, the every 1cm of the mean number of residual blasting materials
2Be 1, number average particle is 2, and the particle frequency of burst is 0 time.
(embodiment 6)
Except after the inject process with ejection pressure 200kgf/cm
2, water yield 20L/min carries out high pressure water washing and replaces making sputtering target beyond the etch processes under carrying out washing treatment condition similarly to Example 1.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.1 μ m, the every 1cm of the mean number of residual blasting materials
2Be 3, number average particle is 3, and the particle frequency of burst is 0 time.
(embodiment 7)
Except the particle diameter with blasting materials is taken as 200～400 μ m, air pressure is taken as 4.7kg/cm
2, high pressure water washing liquid ejection pressure be taken as 250kgf/cm
2In addition, under wash conditions similarly to Example 6, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=3.5 μ m, the every 1cm of the mean number of residual blasting materials
2Be 4, number average particle is 2, and the particle frequency of burst is 0 time.
(embodiment 8)
The air pressure that is taken as copper, blasting materials except the material with the target body is taken as 4.3kg/cm
2, beyond etching period was taken as 2 minutes, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.0 μ m, the every 1cm of the mean number of residual blasting materials
2Be 2, number average particle is 2, and the particle frequency of burst is 0 time.
(embodiment 9)
The particle diameter that is taken as nickel, blasting materials except the material with the target body is taken as 200～400 μ m, air pressure is taken as 4.3kg/cm
2In addition, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=3.0 μ m, the every 1cm of the mean number of residual blasting materials
2Be 2, number average particle is 2, and the particle frequency of burst is 0 time.
(embodiment 10)
The air pressure that is taken as cobalt, blasting materials except the material with the target body is taken as 4.3kg/cm
2, beyond etching period was taken as 2 minutes, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.3 μ m, the every 1cm of the mean number of residual blasting materials
2Be 1, number average particle is 2, and the particle frequency of burst is 1 time.
(embodiment 11)
The air pressure that is taken as tantalum, blasting materials except the material with the target body is taken as 4.3kg/cm
2In addition, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.5 μ m, the every 1cm of the mean number of residual blasting materials
2Be 3, number average particle is 2, and the particle frequency of burst is 0 time.
(embodiment 12)
The air pressure that is taken as gold, blasting materials except the material with the target body is taken as 4.3kg/cm
2, after the inject process with ejection pressure 200kgf/cm
2, water yield 20L/min carries out high pressure water washing and replaces making sputtering target beyond the etch processes under carrying out washing treatment condition similarly to Example 1.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.5 μ m, the every 1cm of the mean number of residual blasting materials
2Be 2, number average particle is 2, and the particle frequency of burst is 0 time.
(embodiment 13)
Except the material with the target body is taken as after silver, the inject process with ejection pressure 200kgf/cm
2, water yield 20L/min carries out high pressure water washing and replaces making sputtering target beyond the etch processes under carrying out washing treatment condition similarly to Example 1.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=3.0 μ m, the every 1cm of the mean number of residual blasting materials
2Be 2, number average particle is 3, and the particle frequency of burst is 0 time.
(embodiment 14)
The air pressure that is taken as chromium, blasting materials except the material with the target body is taken as 4.3kg/cm
2, after the inject process with ejection pressure 200kgf/cm
2, water yield 20L/min carries out high pressure water washing and replaces making sputtering target beyond the etch processes under carrying out washing treatment condition similarly to Example 1.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.8 μ m, the every 1cm of the mean number of residual blasting materials
2Be 1, number average particle is 2, and the particle frequency of burst is 1 time.
(embodiment 15)
The air pressure that is taken as niobium, blasting materials except the material with the target body is taken as 4.3kg/cm
2, after the inject process with ejection pressure 200kgf/cm
2, water yield 20L/min carries out high pressure water washing and replaces making sputtering target beyond the etch processes under wash conditions similarly to Example 1.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.5 μ m, the every 1cm of the mean number of residual blasting materials
2Be 1, number average particle is 1, and the particle frequency of burst is 0 time.
(embodiment 16)
The air pressure that is taken as platinum, blasting materials except the material with the target body is taken as 4.3kg/cm
2, after the inject process with ejection pressure 200kgf/cm
2, water yield 20L/min carries out high pressure water washing and replaces making sputtering target beyond the etch processes under wash conditions similarly to Example 1.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.5 μ m, the every 1cm of the mean number of residual blasting materials
2Be 3, number average particle is 1, and the particle frequency of burst is 0 time.
(embodiment 17)
The air pressure that is taken as molybdenum, blasting materials except the material with the target body is taken as 4.3kg/cm
2In addition, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.3 μ m, the every 1cm of the mean number of residual blasting materials
2Be 2, number average particle is 1, and the particle frequency of burst is 0 time.
(embodiment 18)
The particle diameter that is taken as tungsten, blasting materials except the material with the target body is taken as 200～400 μ m, air pressure is taken as 4.3kg/cm
2In addition, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 5.Surface roughness Ra=2.7 μ m, the every 1cm of the mean number of residual blasting materials
2Be 2, number average particle is 1, and the particle frequency of burst is 0 time.
(comparative example 1)
Except the particle diameter with blasting materials is taken as 300～500 μ m, air pressure is taken as 5.3kg/cm
2In addition, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 6.Surface roughness Ra=4.8 μ m, the every 1cm of the mean number of residual blasting materials
2Be 2, number average particle is 10, and the particle frequency of burst is 4 times.
(comparative example 2)
Except the particle diameter with blasting materials is taken as 300～500 μ m, air pressure is taken as 4.6kg/cm
2In addition, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 6.Surface roughness Ra=4.5 μ m, the every 1cm of the mean number of residual blasting materials
2Be 1, number average particle is 12, and the particle frequency of burst is 4 times.
(comparative example 3)
Except the air pressure with blasting materials is taken as 4.1kg/cm
2, beyond etching period was taken as 1 minute, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 6.Surface roughness Ra=1.2 μ m, the every 1cm of the mean number of residual blasting materials
2Be 8, number average particle is 12, and the particle frequency of burst is 3 times.
(comparative example 4)
Except the particle diameter with blasting materials does not carry out etch processes after being taken as 200～400 μ m, inject process, only carry out under wash conditions similarly to Example 1, making sputtering target beyond the ultrasonic washing.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 6.Surface roughness Ra=3.5 μ m, the every 1cm of the mean number of residual blasting materials
2Be 15, number average particle is 15, and the particle frequency of burst is 4 times.
(comparative example 5)
Do not carry out inject process, only carry out ultrasonic washing behind the making titanium system target body.The treatment condition of ultrasonic washing are taken as condition similarly to Example 1.Evaluation result is shown in Fig. 6.Surface roughness Ra=0.5 μ m, the every 1cm of the mean number of residual blasting materials
2Be 0, number average particle is 13, and the particle frequency of burst is 4 times.
(comparative example 6)
Except the particle diameter with blasting materials is taken as 200～400 μ m, air pressure is taken as 4.6kg/cm
2, the ultrasonic frequency that adds of ultrasonic washing after the inject process and the ultrasonic washing after the etch processes is taken as respectively beyond the 30kHz, under carrying out washing treatment condition similarly to Example 1, make sputtering target.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 6.Surface roughness Ra=3.2 μ m, the every 1cm of the mean number of residual blasting materials
2Be 9, number average particle is 10, and the particle frequency of burst is 4 times.
(comparative example 7)
Except the air pressure with blasting materials is taken as 4.4kg/cm
2, with the ultrasonic washing after the inject process add ultrasonic frequency be taken as 30kHz, with ejection pressure 250kgf/cm
2, water yield 20L/min carries out high pressure water washing and replaces etch processes, the ultrasonic frequency that adds of the ultrasonic washing after the high pressure water washing is taken as beyond the 30kHz, makes sputtering target under carrying out washing treatment condition similarly to Example 1.With embodiment 1 carry out same evaluation thereafter.Evaluation result is shown in Fig. 6.Surface roughness Ra=2.1 μ m, the every 1cm of the mean number of residual blasting materials
2Be 9, number average particle is 10, and the particle frequency of burst is 3 times.
Claims (12)
1. the manufacture method of a sputtering target is the manufacture method of magnetic controlled tube sputtering apparatus with sputtering target, it is characterized in that,
Prepare the target body,
The non-corrosive zone of the described target body surface of inject process,
The described non-corrosive zone of ultrasonic washing,
Etching or the described non-corrosive zone of crossing with the described ultrasonic washing of washings hydro-peening,
The described non-corrosive zone of ultrasonic washing once more.
2. the manufacture method of sputtering target according to claim 1 is characterized in that,
The operation of described inject process makes described non-corrosive regional asperitiesization to more than surfaceness (Ra) the 1 μ m below the 4 μ m.
3. the manufacture method of sputtering target according to claim 2 is characterized in that,
The operation in the described non-corrosive zone of ultrasonic washing is to wash described non-corrosive zone to add the above 19kHz of 18kHz with the jet of hyperacoustic washings of lower frequency.
4. the manufacture method of sputtering target according to claim 3 is characterized in that,
Make described effusive pressure below the above 300kPa of 200kPa.
5. sputtering target washing methods is the target washing methods that at least a portion on surface is implemented the sputter that inject process crosses, it is characterized in that,
The inject process zone of the described sputtering target of ultrasonic washing,
Etching or the described inject process zone of crossing with the described ultrasonic washing of washings hydro-peening,
The described inject process of ultrasonic washing zone once more.
6. the washing methods of sputtering target according to claim 5 is characterized in that,
The operation in the described inject process of ultrasonic washing zone is to wash described inject process zone with the jet that adds the hyperacoustic washings below the above 19kHz of 18kHz.
7. the washing methods of sputtering target according to claim 6 is characterized in that,
Make described effusive pressure below the above 300kPa of 200kPa.
8. a sputtering target is the magnetic controlled tube sputtering apparatus sputtering target, it is characterized in that possessing:
The target body,
The corrosion area that constitutes the part on the surface of described target body, is etched by sputter and
Other a part, the surfaceness (Ra) that constitutes described target body surface be the above 4 μ m of 1 μ m following and also per 1 square centimeter in the number of blasting materials more than the diameter 10 μ m suitable with circle in the non-corrosive zone below 4.
9. sputtering target according to claim 8 is characterized in that,
Described non-corrosive zone comprises the side of described target body.
10. sputtering target according to claim 8 is characterized in that,
Described target body contains metallic element or with its alloy as principal constituent.
11. sputtering target according to claim 10 is characterized in that,
Described metallic element is titanium, aluminium, copper, nickel, cobalt, tantalum, gold and silver, chromium, niobium, platinum, molybdenum or tungsten.
12. a sputter equipment is characterized in that possessing:
Vacuum tank,
The substrate that is arranged on described vacuum tank inside is supported platform,
Support the sputtering target that the platform subtend disposes with described substrate, this sputtering target has: the target body, the corrosion area that constitutes the part on the surface of described target body, is etched by sputter, with other a part, the surfaceness (Ra) that constitutes described target body surface be the above 4 μ m of 1 μ m following and also per 1 square centimeter in more than the diameter 10 μ m suitable with circle blasting materials number the non-corrosive zone below 4 and
Form the magnetic circuit of Distribution of Magnetic Field on the surface of described sputtering target.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008034206 | 2008-02-15 | ||
| JP2008034206A JP4965479B2 (en) | 2008-02-15 | 2008-02-15 | Sputtering target manufacturing method and sputtering target cleaning method |
| JP2008-034206 | 2008-02-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101509127A true CN101509127A (en) | 2009-08-19 |
| CN101509127B CN101509127B (en) | 2013-03-27 |
Family
ID=41001656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100074428A Active CN101509127B (en) | 2008-02-15 | 2009-02-13 | Method for manufacturing sputtering target, method for cleaning sputtering target, sputtering target and sputtering device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4965479B2 (en) |
| KR (1) | KR20090088797A (en) |
| CN (1) | CN101509127B (en) |
| TW (1) | TWI457454B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437004A (en) * | 2010-09-29 | 2012-05-02 | Snu精密股份有限公司 | Sputtering device |
| CN103132038A (en) * | 2013-02-27 | 2013-06-05 | 蚌埠玻璃工业设计研究院 | Cathode backside glow discharge elimination device |
| CN106854752A (en) * | 2015-12-08 | 2017-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering apparatus |
| CN107109637A (en) * | 2015-03-05 | 2017-08-29 | 三井金属矿业株式会社 | Ceramic cylindrical target and cylindrical shape sputter target |
| CN107406967A (en) * | 2015-03-10 | 2017-11-28 | 株式会社爱发科 | The film build method and forming method and sputter equipment of pellumina |
| CN107614746A (en) * | 2015-05-29 | 2018-01-19 | 住友金属矿山株式会社 | Sputtering target material and use its spatter film forming method |
| CN107771115A (en) * | 2015-05-15 | 2018-03-06 | 美题隆公司 | The surface treatment method of sputtering target |
| CN108690958A (en) * | 2017-03-30 | 2018-10-23 | 住友化学株式会社 | Target cleaning method, the device for it, target manufacturing method and target and recycling ingot casting manufacturing method and recycling ingot casting |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011152481A1 (en) * | 2010-06-03 | 2011-12-08 | 株式会社アルバック | Sputter film forming device |
| WO2011152482A1 (en) * | 2010-06-03 | 2011-12-08 | 株式会社アルバック | Sputter deposition device |
| WO2013011705A1 (en) * | 2011-07-21 | 2013-01-24 | Sintokogio, Ltd. | Processing method of substrate for semiconductor elements |
| CN108611608B (en) * | 2018-05-04 | 2019-10-18 | 宁波江丰电子材料股份有限公司 | Target material assembly and processing method |
| TWI656240B (en) * | 2018-07-13 | 2019-04-11 | 友礦材料股份有限公司 | Target sputtering surface roughness processing method |
| JP6744957B1 (en) * | 2019-06-25 | 2020-08-19 | 株式会社アルバック | Surface treatment method |
| KR102649715B1 (en) * | 2020-10-30 | 2024-03-21 | 세메스 주식회사 | Surface treatment apparatus and surface treatment method |
| WO2024084878A1 (en) * | 2022-10-17 | 2024-04-25 | 松田産業株式会社 | Au sputtering target |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000319776A (en) * | 1999-05-06 | 2000-11-21 | Sti Technology Kk | Target for sputtering and production of black matrix for color filter using the same |
| JP4495855B2 (en) * | 2000-12-11 | 2010-07-07 | 株式会社東芝 | Titanium sputtering target and manufacturing method thereof |
| JP2002302762A (en) * | 2001-04-04 | 2002-10-18 | Tosoh Corp | Ito sputtering target |
| JP2003031535A (en) * | 2001-07-11 | 2003-01-31 | Mitsubishi Electric Corp | Ultrasonic cleaning method of semiconductor manufacturing apparatus |
| US6656535B2 (en) * | 2001-12-21 | 2003-12-02 | Applied Materials, Inc | Method of fabricating a coated process chamber component |
| US20050072668A1 (en) * | 2003-10-06 | 2005-04-07 | Heraeus, Inc. | Sputter target having modified surface texture |
-
2008
- 2008-02-15 JP JP2008034206A patent/JP4965479B2/en active Active
-
2009
- 2009-02-04 TW TW098103458A patent/TWI457454B/en active
- 2009-02-05 KR KR1020090009105A patent/KR20090088797A/en not_active Application Discontinuation
- 2009-02-13 CN CN2009100074428A patent/CN101509127B/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437004A (en) * | 2010-09-29 | 2012-05-02 | Snu精密股份有限公司 | Sputtering device |
| CN103132038A (en) * | 2013-02-27 | 2013-06-05 | 蚌埠玻璃工业设计研究院 | Cathode backside glow discharge elimination device |
| CN107109637A (en) * | 2015-03-05 | 2017-08-29 | 三井金属矿业株式会社 | Ceramic cylindrical target and cylindrical shape sputter target |
| CN107406967A (en) * | 2015-03-10 | 2017-11-28 | 株式会社爱发科 | The film build method and forming method and sputter equipment of pellumina |
| CN107406967B (en) * | 2015-03-10 | 2019-03-05 | 株式会社爱发科 | The film build method and forming method and sputtering equipment of pellumina |
| CN107771115A (en) * | 2015-05-15 | 2018-03-06 | 美题隆公司 | The surface treatment method of sputtering target |
| US10604836B2 (en) | 2015-05-15 | 2020-03-31 | Materion Corporation | Methods for surface preparation of sputtering target |
| CN107614746A (en) * | 2015-05-29 | 2018-01-19 | 住友金属矿山株式会社 | Sputtering target material and use its spatter film forming method |
| TWI689608B (en) * | 2015-05-29 | 2020-04-01 | 日商住友金屬礦山股份有限公司 | Sputtering target material and sputtering film-forming method using the same |
| CN106854752A (en) * | 2015-12-08 | 2017-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering apparatus |
| CN106854752B (en) * | 2015-12-08 | 2019-07-05 | 北京北方华创微电子装备有限公司 | Magnetron sputtering apparatus |
| CN108690958A (en) * | 2017-03-30 | 2018-10-23 | 住友化学株式会社 | Target cleaning method, the device for it, target manufacturing method and target and recycling ingot casting manufacturing method and recycling ingot casting |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4965479B2 (en) | 2012-07-04 |
| JP2009191323A (en) | 2009-08-27 |
| TW200936794A (en) | 2009-09-01 |
| CN101509127B (en) | 2013-03-27 |
| KR20090088797A (en) | 2009-08-20 |
| TWI457454B (en) | 2014-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101509127B (en) | Method for manufacturing sputtering target, method for cleaning sputtering target, sputtering target and sputtering device | |
| JP4965480B2 (en) | Manufacturing method of backing plate and cleaning method of backing plate | |
| KR102602620B1 (en) | Yttrium thermal spraying coating and method for manufacturing the same | |
| TW200907087A (en) | Sputtering target and method for production thereof | |
| TW200901314A (en) | Plasma treatment apparatus and manufacturing method of deposition-inhibitory member | |
| CN108265274A (en) | The processing method of target material assembly | |
| JP4456769B2 (en) | Method of cleaning silicon electrode for generating fluorocarbon plasma and method of manufacturing semiconductor device using the same | |
| WO2005077677A1 (en) | Physical vapor deposition components, and methods of treating components | |
| CN107313086B (en) | A kind of composite-making process of Ultra-fine Grained/nanocrystalline Cr coating | |
| US6468404B2 (en) | Apparatus and method for reducing redeposition in a physical vapor deposition system | |
| JP6145162B2 (en) | Ion beam processing apparatus, electrode assembly, and electrode assembly cleaning method | |
| JP5727740B2 (en) | Manufacturing method of backing plate | |
| KR20060057571A (en) | Pvd component and coil refurbishing methods | |
| CN114250436B (en) | Corrosion-resistant coating preparation method, semiconductor part and plasma reaction device | |
| JP5899387B1 (en) | Water-reactive Al composite material, water-reactive Al alloy sprayed film, method for producing this Al alloy sprayed film, and component for film forming chamber | |
| JP2013199694A (en) | Sputtering target or backing plate and method for cleaning the same | |
| JP2012017493A (en) | Sputtering target | |
| JP7310395B2 (en) | Sputtering target and manufacturing method thereof | |
| JP2717710B2 (en) | Film etching equipment | |
| JP4485003B2 (en) | High strength electrolytic copper foil for particle getter, thin film forming apparatus having the copper foil disposed therein, and method for producing the electrolytic copper foil | |
| JP3865588B2 (en) | Ceramic member having fine protrusions formed on its surface, and method for producing the same | |
| JP5540947B2 (en) | Sputtering target | |
| JP2003059741A (en) | Manufacturing method of rare earth-based permanent magnet having deposition film on surface | |
| US20020153022A1 (en) | Method for preventing particles in a pre-clean chamber | |
| JP2008229449A (en) | Washing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: AINORIKA CO., LTD. Free format text: FORMER OWNER: ULVAC MATERIALS INC. Effective date: 20101130 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CHIBA, JAPAN TO: KANAGAWA, JAPAN |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20101130 Address after: Kanagawa, Japan Applicant after: Ulvac Inc. Address before: Chiba County, Japan Applicant before: Ulvac Corp. |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |