DE102005019456A1 - Target used in sputtering processes comprises a slanted surface formed around the body of the target in a region in which a sputtering surface and a peripheral surface of the body of the target cross each other - Google Patents

Target used in sputtering processes comprises a slanted surface formed around the body of the target in a region in which a sputtering surface and a peripheral surface of the body of the target cross each other

Info

Publication number
DE102005019456A1
DE102005019456A1 DE200510019456 DE102005019456A DE102005019456A1 DE 102005019456 A1 DE102005019456 A1 DE 102005019456A1 DE 200510019456 DE200510019456 DE 200510019456 DE 102005019456 A DE102005019456 A DE 102005019456A DE 102005019456 A1 DE102005019456 A1 DE 102005019456A1
Authority
DE
Germany
Prior art keywords
target
sputtering
surface
body
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE200510019456
Other languages
German (de)
Inventor
Makoto Arai
Satoru Ishibashi
Junya Kiyoto
Takashi Komatsu
Kyuzo Chigasaki Nakamura
Atsushi Ota
Isao Sugiura
Noriaki Tani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004136145A priority Critical patent/JP4959118B2/en
Priority to JP2004/136145 priority
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of DE102005019456A1 publication Critical patent/DE102005019456A1/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3423Shape
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material

Abstract

In a design of a prior art sputtering target, there is a tendency for current to flow from the target to a ground shield while plasma is generated by the application of a negative DC voltage or voltage at the target. It is therefore a problem that non-erodible areas remain on the periphery of the target without being sputtered due to non-generation of plasma on the peripheral surfaces of the target. This induces an abnormal discharge due to the charging, or also particles may be formed on a surface of a substrate by reprecipitated layers on the non-erodible area, which leads to an influence on the reproducibility of the film formation and reduces the working efficiency of the target. Such a problem can be solved by the present invention in which a tapered surface (T2) is formed around the body of the target (T) in a region where a sputtering surface (Ts) and a peripheral surface (Tc) of the body of the Targets (T) intersect each other.

Description

  • The The present invention relates to a target for sputtering and a sputtering method using this target, in particular on a target that for a magnetron sputtering apparatus is used and a Sputtering method using this target.
  • At the Sputtering (also called sputtering according to the magnetron type, it is possible to control the plasma density to increase the placement of a Magna compilation, which is a field of magnets having alternating magnetic poles behind a target, by forming a tunnel-shaped magnetic flux in front of a sputtering surface of the target using the Magassembly and through the trapping of ionized electrons in front of the sputtering surface and from secondary Electrons generated by sputtering around the electron density on the sputtering surface to increase and the collision probability of these electrons and the gas molecules of the noble gas to increase. Accordingly, magnetron sputtering has advantages, for example, by improving the speed of making of deposited layers, and is therefore used in forming predetermined thin Layers used on a substrate to be processed.
  • Heretofore, for example, a target of a cylindrical or square prism arrangement having a thickening in only a portion of a sputtering surface at a high magnetic flux density has been used as a target for the magnetron sputtering type sputtering apparatuses (see, for example, US Pat 2 Japanese Laid-Open Patent Publication JP 18435/1995).
  • One Grounding shield is arranged around the perimeter of the target to surround this when the target is on a sputtering device is attached to generate stable plasma. The grounding screen serves to prevent parts, such as support plates and the same ones connected to the target, also sputtered Be sure to put a dark space between these parts and the grounding screen is trained.
  • Indeed arises with such an arrangement a tendency to current flow from the target to the ground shield while generating plasma by applying a negative DC voltage (DC) or a High frequency voltage on the target. This creates a problem there that on the circumference of the target due to the non-production of Plasma on the peripheral surfaces the target non-erodible areas remain without sputtering to become.
  • If in such a case, the non-erodible areas on the Scope of the target remain, then there is an abnormal discharge induced due to the charge or the again on the not erodible area deposited layers cause particles on a surface of a Substrate. This has an influence on the reproducibility of the Layer formation and reduces the working efficiency of the target.
  • It It is therefore an object of the present invention to provide a target for Sputtering and sputtering using this target to suggest which allows the peripheral areas of the target, available as sputtering area becoming the generation of abnormal discharge and of Particles suppressed will, and that as well a high work efficiency have.
  • To the Achieving this task is a target for sputtering with a predetermined outer circumference according to the present Invention characterized in that a bevelled surface all around the body of the Targets are created around in an area where one sputter and a peripheral surface of the body of Targets cut each other.
  • According to the present The invention is made round by the provision of a tapered surface around the body of the target in an area where the sputtering surface and the peripheral surface of the body of the target cut each other, made the distance possible between the bevelled surface and a magnet assembly arranged behind the target to reduce and thereby the strength of the magnetic field on the beveled surface of the target. As the electron density at the tapered surface also increases Accordingly, the plasma also on the tapered surface of the Targets generated when a negative DC voltage or a high frequency voltage is applied to the target. As a result, the peripheral area of the Targets available as sputter erodible area.
  • Accordingly, it becomes possible to avoid inducing abnormal discharges due to charging, and to avoid reprecipitation of films or layers that may cause particles to be on the surface of the substrate. In addition, since the peripheral areas of the target can be sputtered, it becomes possible to uniformly add the surface of the target erode and thus improve the working efficiency of the same.
  • Preferably is the height the beveled surface the sputtering surface in a range between 20% and 80% of that of an im Substantial middle portion of the target, so as to a peripheral area of the target as a sputter erodierbaren area.
  • It also lies the angle between the sputtering surface and the tapered surface is preferred in a range between 5 ° and 60 ° to allowing the peripheral region of the target to be sputtererodierbarer To become area.
  • It It is known that yellow powder is a reason for generating particles is deposited on a non-erodible area, if a target for including ITO sputtering Indium, tin and oxygen within a plasma atmosphere at the introduction sputtered a predetermined sputtering gas, such as argon sputtered becomes. Such a problem can be avoided if the target of the present invention is used, of which the peripheral areas become available as a sputterer erodible area, as a target for ITO sputtering including of indium, tin and oxygen.
  • Preferably For example, the target may be a target for use in a sputtering apparatus of magnetron type, which is a plasma for sputtering the target generated by forming a magnetic flux in front of the sputtering surface and an electric field between the target and a to-be-processed one Substrate forms.
  • According to the present Invention will also proposed a sputtering method comprising a target according to any one of claims 1 to 3, in which a plasma is formed by forming a Magnetic flux in front of the sputtering surface of a target and through forming an electric field between the target and a Substrate to be processed is generated, characterized that sputtering, by the introduction of oxygen, nitrogen, Carbon or hydrogen or a mixture of any of these Gases is performed.
  • As previously described it uses the target for sputtering and the sputtering method this target according to the present invention, the peripheral area of a target as a sputterer erodible area to disposal to deliver. This makes it possible to avoid creating abnormal discharges and particles and accordingly a superior one Reproducibility of a layer formation and a high work efficiency of the target to reach.
  • additional Advantages and features of the present invention will become apparent from the following description and the appended claims, in particular in conjunction with the attached Drawings. In these is, respectively are:
  • 1 a schematic view showing a sputtering apparatus in which a target according to the present invention is mounted;
  • 2 (a) and 2 B) Illustrative views showing sputtered eroded areas according to the prior art and according to the present invention, respectively;
  • 3 (a) to 3 (c) each a perspective view, a plan view and a side view showing the target according to the present invention;
  • 4 (a) to 4 (c) Views showing targets according to modified embodiments of the present invention; and
  • 5 FIG. 14 is a graph showing the number of arc discharges when the applied electric power is changed in an example of a target according to the present invention, compared with that of the prior art.
  • With reference to 1 denotes the reference numeral 1 a magnetron type sputtering apparatus in which a target T for sputtering according to the present invention is mounted. The sputtering device 1 is of the so-called "inline type" and has a sputtering chamber 11 , which is maintained by means of an evacuation device to a predetermined degree of vacuum or negative pressure, which for example comprises a centrifugal pump, a turbomolecular pump or the like (not shown). A transfer device 2 for a substrate is above the sputtering chamber 11 arranged. The transfer or transfer device 2 for the substrate has a known structure and has, for example, a carrier 21 on which substrates S to be processed are mounted, and which is intermittently driven by drive means (not shown) to successively transfer the substrate S to a position opposite to the target T.
  • A gas introduction device 3 is also inside the sputtering chamber 11 arranged. The gas introduction device 3 is associated with multiple gas sources 33 over gas lines 32 , between which a mass flow controller 31 at a constant flow rate, a sputtering gas, such as argon and, if necessary, a reaction gas comprising oxygen, nitrogen, carbon or hydrogen, or a mixture of one of these gases used in reactive sputtering, is arranged in the sputtering chamber 11 introduce. A cathode arrangement 4 is under the sputtering chamber 11 arranged.
  • The cathode arrangement 4 has the target T in an elongated circular configuration made in accordance with the composition of a thin film to be deposited on the substrate S, for example, silicon (Si), tantalum (Ta), aluminum (Al ), Carbon (C), zinc oxide (ZnO) or ITO. In this case, the target T is formed from raw materials such as silicon (Si) and the like using one of the known methods such as a printing method or a casting method. In the case of an ITO target, it may be prepared by any of the known methods after mixing predetermined powders using, for example, a ball mill.
  • The target T formed in this way is provided with a support plate 41 for cooling the target T during sputtering. The support plate 41 is on a frame 43 the cathode arrangement 43 over an insulation plate 42 attached.
  • A grounding screen 44 is arranged around the periphery, or the circumference of the target T, to produce stable plasma. The grounding screen 44 serves to avoid the parts connected to the target T, such as the support plate 41 and further sputtered, in which a dark space between these parts, such as the support plate 41 and the grounding screen 44 , is formed.
  • A magnet composition 45 is placed behind the tart T and on the cathode assembly 4 attached. The magnet composition 45 has a support section 45a on which three magnets 45b and 45c are arranged at predetermined intervals, wherein the magnetic poles alternate. Such an arrangement can increase the plasma density by increasing the electron density on a plane of the sputtering surface by forming a tunnel-shaped magnetic flux M in a closed loop in front of the sputtering surface of the target T and by trapping electrons that are ionized in front of the sputtering surface and secondary electrons generated by sputtering.
  • In general, the outer circumference of the target T is made larger than that of the substrate S to be processed. Accordingly, the larger the size of the substrate, the greater the size of the target T. If the size of the substrate as well as that of the target is large is, several of the mag compositions are arranged side by side behind the target T at a predetermined interval. In addition, several of the cathode arrangements within the sputtering chamber 11 be arranged when the outer peripheral size of the substrate is large.
  • A thin film is formed on the substrate S by sputtering the target T by the carrier 21 driven by the drive means and then the substrate S in a posi tion against the target T transferred and the sputtering gas and the reaction gas through the gas introduction means 3 is introduced to form an electric field perpendicular to the substrate S and the target T and to generate a plasma in front of the target T.
  • If the position of the magnet assembly is fixed, the plasma density is locally increased and therefore the sputtering erosion of the target T is substantially concentrated to a region of high plasma density. This reduces the working efficiency of the target T. Accordingly, the magnet composition 45 arranged by a drive device 46 is driven, which is a motor 46a to reciprocate the target T at a constant speed between two horizontal positions along the target T.
  • In the structure in which the grounding screen 44 disposed around the target, an electric current tends to flow from the target to the ground shield 44 When plasma is generated by applying a negative DC voltage or a high frequency voltage to the target. Accordingly, no plasma is formed on the surface of the peripheral portion of the prior art target having a configuration such as a cylinder or a square prism.
  • If a target is "t" ( 2 (a) With a prior art structure sputtered, a non-erodible region "tu" remains on its circumference, and this non-erodible region "tu" remains at its periphery "t1" of the target "T" and induces an abnormal discharge Reason for charging or redeposited (re-deposited) layers on the non-erodible area, causing particles on a surface of a substrate. This leads to an influence on the reproducibility of the layer or film formation and reduces the working efficiency of the target.
  • As most clearly in the 2 B) and 3 is shown, the target T of a preferred embodiment of the present invention is uniformly formed with a tapered surface T2 along the body of the target T in a region where a sputtering surface Ts and peripheral surface Tc of a body of the target T intersect with each other. That is, the target T is beveled in its peripheral area on one side of the sputtering surface Ts. In this case, a tapered surface T2 is formed to be located in a position toward the sputtering chamber 11 at least until behind the grounding screen 44 protrudes when the target T is mounted on the sputtering apparatus 1.
  • A height H1 of the tapered surface T2 from the sputtering surface Ts of the target T is set in a range within 20 to 80% of the height HT of a substantially central portion of the target T, and the angle a between the sputtering surface Ts and the tapered surface T2 becomes set at an angle between 5 to 60 ° to the distance between the tapered surface T2 and the magnet assembly 45 to reduce and thus increase the strength of the magnetic field at the tapered surface T2. Preferably, a distance W1 from a peripheral side surface Tc to the tip of the tapered surface T2 is set in a range between 10% and 50% corresponding to the longer axis WL and the shorter axis WT of the target T.
  • The beveled surface T2 can be formed using any of the known methods be such as the printing process or a casting process while of making the target T up to its predetermined composition, or it can be formed by a chamfering machining mechanism, a cutting tool after forming the target T to its used predetermined structure.
  • Since it is possible to measure the distance between the tapered surface T2 and the magnet assembly 45 To reduce, and thus increase the strength of the Mag netfeldes according to the present invention, plasma at the tapered surface T2 are generated evenly when a negative DC voltage or a high frequency voltage is applied to the target T for generating plasma. Accordingly, the peripheral portion T1 of the target T can be sputtered and a sputter erodable region as in FIG 2 B) For example, when sputtering is performed with introduction or without introduction of the reaction gas as mentioned above.
  • It It is known that yellow powder is a reason for generating particles is deposited on a non-erodible area, if a target for including ITO sputtering Indium, tin and oxygen within a plasma atmosphere below introduction a predetermined sputtering gas, such as argon is sputtered. However, such a problem can be eliminated if the Target of the present invention is used, of which the scope is designed as sputtererodierbare area and as a target for ITO sputtering including Indium, tin and oxygen is used.
  • Although the target T of the preferred embodiment of the present invention has been described in terms of having an elongated oval structure, it is not limited to such a structure and many other structures such as those in FIGS 4 (a) to 4 (c) shown can be used. The sputter erodable area is formed on the periphery of the target T having such a structure by chamfering the circumference of the target to form the tapered surface T2. This is true if multiple magnet assembly 45 are arranged behind the target T.
  • Embodiment 1
  • According to an embodiment 1, a target T of silicon (Si) is manufactured by using a known method as an elongated circular (oval) structure having a longer axis WL of 300 mm, a shorter axis WT of 125 mm and a height AT of 10 mm , Then, the target is bevelled, that is, a tapered surface T2 with a lateral width W1 of 20 mm and a height H1 of 5 mm, and finally with the support plate 41 connected.
  • The target T is mounted on the sputtering apparatus 1, and a glass substrate S is then passed through a vacuum transfer device 21 transported to a position opposite to the target T.
  • A film or layer of silicon nitride is then deposited on the glass substrate under sputtering conditions. The pressure inside the sputtering chamber 11 is evacuated at 0.4 Pa with introduction of argon as sputtering gas and nitrogen as reaction gas into the sputtering chamber 11 under the control of a mass flow control unit 31 held. In this case, the distance between the target T and the glass substrate is set to 90 mm.
  • A line "A" in the 5 indicates a result of a number of arc discharges (abnormal discharge) per unit time interval (in minutes) a change in the applied electric power (DC) to the target within a range of 0 to 7 kW.
  • To the right, the applied electric power in kilowatts (kW) is plotted. At the top, the number of arc discharges per minute is plotted. Within the drawing, the measured values from embodiment 1 are entered in the form of small circles, which are connected to one another by a line A. Also, in the 5 entered the measured values from a comparative example 1 in the form of small triangles, which are interconnected by a dashed line B.
  • Comparative Example 1
  • In In Comparative Example 1, a target T is made of silicon (Si) with the same size as from the embodiment 1, but without a chamfer formed in a region in which the sputter surface Ts the Peripheral side surface Tc cuts. The sputtering conditions are also the same, like that in the embodiment 1. A layer of silicon nitride is placed in position across from transferred to the target T glass substrate educated.
  • Similar to Embodiment 1, a line "B" in FIG 5 as a result, a number of arc discharges (abnormal discharge) per unit time interval (in minutes) with a change in the applied electric power (DC negative voltage) to the target within a range of 0 and 7 kW.
  • It is clearly in 5 It can be seen that the number of arc discharges of Comparative Example 1 remarkably increases in proportion to the applied electric power at the target T and exceeds 20 times as the applied electric power rises above 6 kW. On the other hand, the number of arc discharges in the embodiment does not remarkably increase, although the applied electric power of the target T is increased. The number of arc discharges can be suppressed to less than 1/6 of that of Comparative Example 1 within a range of the applied electric power (about 7 kW), or commonly used in silicon (Si) sputtering. This is because the peripheral portion T1 of the target T of the present invention is advantageously sputtered.
  • The The present invention is described with reference to a preferred embodiment been described. Obviously, modifications and changes occur for those skilled in the art after reading and understanding the above detailed Description should be clear. It is intended that the present invention be so constructed is that they have all such changes and modifications, as far as they are within the scope of the appended claims or of their equivalents are located.
  • 1
    sputtering
    2
    Transfer device for the substratum
    3
    Gas introducing means
    4
    cathode assembly
    11
    sputtering
    21
    carrier
    31
    Mass flow controller
    32
    gas lines
    33
    gas wells
    41
    support plate
    42
    insulation plate
    43
    frame
    44
    earthing screen
    45
    Magnet assembly
    45a
    supporting section
    45b
    magnet
    45c
    magnet
    46
    driving means
    46a
    engine
    H1
    Height of the bevelled surface T2
    HT
    Height of the middle Section of the target T
    M
    magnetic River
    S
    substratum
    t
    target
    T
    target
    t1
    of the Scope of the target t
    T2
    a beveled surface of the target T
    tc
    Circumferential surface of Targets T
    ts
    Sputtering surface of the Targets T
    tu
    Not erodible area on the target t
    W1
    distance from the peripheral side surface Tc to the top of the beveled Surface T2
    WL
    longer axis of the target T
    WT
    shorter axis of the target T

Claims (6)

  1. Target for Sputtering with a predetermined outer contour, wherein a bevelled surface (T2) around the body of the target (T) is formed in a region in which a sputter (Ts) and a peripheral surface (Tc) of the body of the target (T) intersect each other.
  2. Target for The sputtering according to claim 1, wherein the height (H1) of the tapered surface (T2) from the sputtering surface (Ts) in a range between 20% to 80% of the (HT) one substantially central portion of the target (T).
  3. Target for sputtering according to claim 1 or 2, wherein an angle (a) between the sputtering surface (Ts) and the tapered surface (T2) is in a range between 5 ° and 60 °.
  4. Target for Sputtering according to one of the preceding claims, in which the target (T) a target for ITO sputtering comprising indium (In), tin (Sn) and oxygen (O) is.
  5. Target for Sputtering according to one of the preceding claims, in which the target (T) one for one Sputtering device used by magnetron type is which a plasma for sputtering the target (T) by forming a magnetic flux (M) in front of the sputtering surface (Ts) generated and an electric field between the target (T) and forms a substrate to be processed (S).
  6. Sputtering method using a target after one of the claims 1 to 5, in which a plasma is generated by forming a Magnetic flux (M) in front of the sputtering surface (Ts) of a target (T) and forming an electric field between the target (T) and a substrate (S) to be processed thereby in that sputtering is performed by introducing Oxygen (O), Nitrogen (N), Carbon (C) or Hydrogen (H) or a mixture of one of these gases.
DE200510019456 2004-04-30 2005-04-25 Target used in sputtering processes comprises a slanted surface formed around the body of the target in a region in which a sputtering surface and a peripheral surface of the body of the target cross each other Pending DE102005019456A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004136145A JP4959118B2 (en) 2004-04-30 2004-04-30 Sputtering apparatus and target for sputtering apparatus
JP2004/136145 2004-04-30

Publications (1)

Publication Number Publication Date
DE102005019456A1 true DE102005019456A1 (en) 2005-11-24

Family

ID=35220135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200510019456 Pending DE102005019456A1 (en) 2004-04-30 2005-04-25 Target used in sputtering processes comprises a slanted surface formed around the body of the target in a region in which a sputtering surface and a peripheral surface of the body of the target cross each other

Country Status (5)

Country Link
JP (1) JP4959118B2 (en)
KR (1) KR101108894B1 (en)
CN (1) CN1693531B (en)
DE (1) DE102005019456A1 (en)
TW (1) TWI414621B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009014067B4 (en) * 2008-03-21 2014-02-13 Tokyo Electron Limited Plasma processing apparatus

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070125646A1 (en) 2005-11-25 2007-06-07 Applied Materials, Inc. Sputtering target for titanium sputtering chamber
GB0613877D0 (en) * 2006-07-13 2006-08-23 Teer Coatings Ltd Coating apparatus and coating for an article
US8992741B2 (en) * 2008-08-08 2015-03-31 Applied Materials, Inc. Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
JP4537479B2 (en) * 2008-11-28 2010-09-01 キヤノンアネルバ株式会社 Sputtering equipment
JP5414340B2 (en) * 2009-04-24 2014-02-12 株式会社アルバック Sputtering method
WO2012144107A1 (en) * 2011-04-18 2012-10-26 Jx日鉱日石金属株式会社 Sputtering target
EP2792766B1 (en) 2011-12-12 2017-03-15 Canon Anelva Corporation Sputtering device and shield
CN102586744B (en) * 2011-12-30 2014-05-07 余姚康富特电子材料有限公司 Target blank and forming method thereof
CN103938164B (en) * 2013-01-22 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Ito thin film sputtering technology method and ito thin film sputtering equipment
CN105039915B (en) * 2015-07-28 2018-01-05 东莞市汇成真空科技有限公司 A kind of arc spot that discharges is abound with the vacuum cathode arc source of target surface

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2030599U (en) * 1987-12-17 1989-01-11 成都电讯工程学院 Planar magnetic-control sputtering target
JPH06248444A (en) * 1993-02-26 1994-09-06 Mitsubishi Materials Corp Target for sputtering
JP3442831B2 (en) * 1993-10-04 2003-09-02 株式会社日立製作所 Method for manufacturing semiconductor device
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
JP2000345330A (en) * 1999-06-02 2000-12-12 Sony Corp Sputtering target
JP3628554B2 (en) * 1999-07-15 2005-03-16 株式会社日鉱マテリアルズ Sputtering target
JP3791829B2 (en) * 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ Sputtering target with less generation of particles
JP4290323B2 (en) * 2000-11-01 2009-07-01 キヤノンアネルバ株式会社 Sputter deposition method
JP2002302762A (en) * 2001-04-04 2002-10-18 Tosoh Corp Ito sputtering target

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009014067B4 (en) * 2008-03-21 2014-02-13 Tokyo Electron Limited Plasma processing apparatus
US8651049B2 (en) 2008-03-21 2014-02-18 Tokyo Electron Limited Plasma processing apparatus

Also Published As

Publication number Publication date
TW200538570A (en) 2005-12-01
CN1693531B (en) 2014-09-17
CN1693531A (en) 2005-11-09
KR20060047524A (en) 2006-05-18
JP4959118B2 (en) 2012-06-20
JP2005314773A (en) 2005-11-10
TWI414621B (en) 2013-11-11
KR101108894B1 (en) 2012-01-31

Similar Documents

Publication Publication Date Title
US20170029937A1 (en) Method of coating high aspect ratio features
KR101841236B1 (en) High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process
JP4936604B2 (en) A high-density plasma source for ionized metal deposition capable of exciting plasma waves
TW500818B (en) A method of making a high magnetic flux, planar, ferromagnetic sputter target for use in magnetron cathode sputtering, and a planar ferromagnetic sputter target for use in magnetron cathode sputtering
US4547279A (en) Sputtering apparatus
JP5305571B2 (en) Segmented and biased peripheral electrodes in plasma processing methods and apparatus
KR100776861B1 (en) Improved magnetron sputtering system for large-area substrates
US6197165B1 (en) Method and apparatus for ionized physical vapor deposition
US6149784A (en) Sputtering chamber shield promoting reliable plasma ignition
US6113752A (en) Method and device for coating substrate
US5707498A (en) Avoiding contamination from induction coil in ionized sputtering
KR101110546B1 (en) Compensation of spacing between magnetron and sputter target
US5458759A (en) Magnetron sputtering cathode apparatus
US5202008A (en) Method for preparing a shield to reduce particles in a physical vapor deposition chamber
KR101147484B1 (en) Sputter method and sputter device
JP3343620B2 (en) Method and apparatus for forming a thin film by magnetron sputtering
US6413382B1 (en) Pulsed sputtering with a small rotating magnetron
JP5551068B2 (en) Sputtering target with extended life and increased sputtering uniformity
KR100792482B1 (en) Tilted sputtering target with shield to block contaminants
US5772858A (en) Method and apparatus for cleaning a target in a sputtering source
US20100270144A1 (en) High Power Pulse Magnetron Sputtering For High Aspect-Ratio Features, Vias, and Trenches
JP2006506521A (en) High deposition rate sputtering
EP0459137B1 (en) Device for coating of substrates
DE102011002451B4 (en) Sputter
KR0165860B1 (en) Magnetron sputtering device

Legal Events

Date Code Title Description
R012 Request for examination validly filed

Effective date: 20120216

R016 Response to examination communication
R016 Response to examination communication